Patent Application
20240371306
One embodiment of the present invention relates to a display apparatus and an electronic device.
Note that one embodiment of the present invention is not limited to the above technical field. The technical field of the invention disclosed in this specification and the like relates to an object, a driving method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter. Therefore, specific examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display apparatus, a liquid crystal display apparatus, a light-emitting device, a power storage device, an imaging device, a memory device, a signal processing device, a processor, an electronic device, a system, a driving method thereof, a manufacturing method thereof, and a testing method thereof.
Display apparatuses included in electronic devices for XR (Extended Reality or Cross Reality) such as VR (Virtual Reality) or AR (Augmented Reality), mobile phones such as smartphones, tablet information terminals, laptop PCs (personal computers), and the like have undergone various improvements in recent years. For example, a display apparatus with a high screen resolution, a display apparatus with high color reproducibility (NTSC ratio), a display apparatus with a small driver circuit, and a display apparatus with reduced power consumption have been developed.
Examples of the aspect ratio of a display region of a display apparatus include 16:9, 4:3, 3:2, and 1:1. Meanwhile, contents (images (including a moving image), applications, and games) displayed on a display apparatus are not limited to the above-described ratios and can have a variety of aspect ratios. For example, moving images of a movie and the like often have an aspect ratio called CinemaScope (2.35:1); thus, in the case where an image with CinemaScope is displayed on a display apparatus with an aspect ratio of 16:9, a part that is not used for display of the image is generated. Since the part is displayed in black, the part is called a black display region, a black region, or a black band portion in some cases.
Patent Document 1 discloses a technique for displaying text information such as subtitles on black regions generated by a difference in aspect ratio between a display apparatus and an image.
As described above, in the case where text information is inserted into a black region in displaying, on a display apparatus, an image having a different aspect ratio from the aspect ratio of the display apparatus, the text information needs to be generated using an image generator. The text information generated with the image generator is transferred to the display region of the display apparatus as an image signal, together with an image having a different aspect ratio from that of the display apparatus; thus a gate driver circuit operates constantly. Moreover, a timing controller is also needed to adjust the timing of inserting the text information as an image signal. Thus, the power consumption of the gate driver circuit and the timing controller is increased in some cases.
An object of one embodiment of the present invention is to provide a display apparatus in which text information is inserted into a black region in displaying, on the display apparatus, an image having a different aspect ratio from that of the display apparatus. Another object of one embodiment of the present invention is to provide a display apparatus with reduced power consumption. Another object of one embodiment of the present invention is to provide a display apparatus with a reduced circuit area. Another object of one embodiment of the present invention is to provide an electronic device including any of the display apparatuses. Another object of one embodiment of the present invention is to provide a novel display apparatus and a novel electronic device.
An object of one embodiment of the present invention is to provide an operation method of a display apparatus in which text information is inserted into a black region in displaying, on the display apparatus, an image having a different aspect ratio from that of the display apparatus. Another object of one embodiment of the present invention is to provide a novel method for operating a display apparatus.
Note that the objects of one embodiment of the present invention are not limited to the objects listed above. The objects listed above do not preclude the existence of other objects. Note that the other objects are objects that are not described in this section and will be described below. The objects that are not described in this section are derived from the description of the specification, the drawings, and the like and can be extracted as appropriate from the description by those skilled in the art. Note that one embodiment of the present invention is to achieve at least one of the objects listed above and the other objects. Note that one embodiment of the present invention does not necessarily achieve all of the objects listed above and the other objects.
(1)
One embodiment of the present invention is a display apparatus including a display portion including a first region and a second region, a first driver circuit corresponding to the first region, a second driver circuit corresponding to the second region, a first circuit, a second circuit, a first signal generation circuit, and a second signal generation circuit. The first circuit has a function of generating a first image signal corresponding to a first image, and the second circuit has a function of generating a second image signal corresponding to a second image. Note that the second image contains a character string. The first signal generation circuit has a function of generating a clock signal with a first frame frequency, and the second signal generation circuit has a function of generating a clock signal with a second frame frequency. Note that the first frame frequency is higher than the second frame frequency. The display apparatus has a function of displaying the first image on the first region with the first frame frequency when the first image signal is transmitted to the first driver circuit, and a function of displaying the second image on the second region with the second frame frequency when the second image signal is transmitted to the second driver circuit.
(2)
In the above (1), in another embodiment of the present invention, a first region and a center portion of the display portion may include a region overlapping with each other. The center portion of the display portion is a circular region having an intersection portion of two diagonal lines of the display portion as a center and a radius of L/64 or less. In addition, L is a length of the diagonal line (diagonal size) of the display portion.
(3)
Another embodiment of the present invention is an electronic device including the display apparatus in the above (1) or (2), a sound input portion, a conversion portion, and an image generation portion. The sound input portion has a function of obtaining an external sound. The conversion portion has a function of generating text information corresponding to the external sound. The image generation portion has a function of generating data of the second image containing a character string corresponding to the text information. The second circuit has a function of obtaining the data and generating the second image signal corresponding to the second image.
(4)
Another embodiment of the present invention is an electronic device including the display apparatus in the above (1) or (2), a sensor, a conversion portion, and an image generation portion. The sensor has a function of capturing movement of a person or an object. The conversion portion has a function of generating text information corresponding to the content captured by the sensor. The image generation portion has a function of generating data of the second image containing a character string corresponding to the text information. The second circuit has a function of obtaining the data and generating the second image signal corresponding to the second image.
(5)
Another embodiment of the present invention is an electronic device including the display apparatus in the above (1) or (2), an antenna, a conversion portion, and an image generation portion. The antenna has a function of receiving notification information from an external device. The conversion portion has a function of generating text information corresponding to the notification information received by the antenna. The image generation portion has a function of generating data of the second image containing a character string corresponding to the text information. The second circuit has a function of obtaining the data and generating the second image signal corresponding to the second image.
One embodiment of the present invention can provide a display apparatus in which text information is inserted into a black region in displaying, on the display apparatus, an image having a different aspect ratio from that of the display apparatus. Another embodiment of the present invention can provide a display apparatus with reduced power consumption. Another embodiment of the present invention can provide a display apparatus with a reduced circuit area. Another embodiment of the present invention can provide an electronic device including any of the display apparatuses. Another embodiment of the present invention can provide a novel display apparatus and a novel electronic device.
An embodiment of the present invention can provide an operation method of a display apparatus in which text information is inserted into a black region in displaying, on the display apparatus, an image having a different aspect ratio from that of the display apparatus. Another embodiment of the present invention can provide a novel method for operating a display apparatus.
Note that the effects of one embodiment of the present invention are not limited to the effects listed above. The effects listed above do not preclude the existence of other effects. Note that the other effects are effects that are not described in this section and will be described below. The effects that are not described in this section are derived from the description of the specification, the drawings, and the like and can be extracted as appropriate from the description by those skilled in the art. Note that one embodiment of the present invention has at least one of the effects listed above and the other effects. Accordingly, depending on the case, one embodiment of the present invention does not have the effects listed above in some cases.
In this specification and the like, a semiconductor device refers to a device that utilizes semiconductor characteristics, and means a circuit including a semiconductor element (e.g., a transistor, a diode, and a photodiode), or a device including the circuit. The semiconductor device also means all devices that can function by utilizing semiconductor characteristics. For example, an integrated circuit, a chip including an integrated circuit, and an electronic component including a chip in a package are each an example of the semiconductor device. Moreover, a memory device, a display apparatus, a light-emitting apparatus, a lighting device, an electronic device, and the like themselves are semiconductor devices or include semiconductor devices in some cases.
In the case where there is description “X and Y are connected” in this specification and the like, the case where X and Y are electrically connected, the case where X and Y are functionally connected, and the case where X and Y are directly connected are regarded as being disclosed in this specification and the like. Accordingly, without being limited to a predetermined connection relation, for example, a connection relation shown in drawings or texts, a connection relation other than one shown in drawings or texts is regarded as being disclosed in the drawings or the texts. Each of X and Y denotes an object (e.g., a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, or a layer).
For example, in the case where X and Y are electrically connected, one or more elements that allow electrical connection between X and Y (e.g., a switch, a transistor, a capacitor, an inductor, a resistor, a diode, a display device, a light-emitting device, and a load) can be connected between X and Y. Note that a switch has a function of being controlled to be turned on or off. That is, the switch has a function of being in a conducting state (on state) or a non-conducting state (off state) to control whether current flows or not.
For example, in the case where X and Y are functionally connected, one or more circuits that allow functional connection between X and Y (e.g., a logic circuit (e.g., an inverter, a NAND circuit, or a NOR circuit); a signal converter circuit (e.g., a digital-analog converter circuit, an analog-digital converter circuit, or a gamma correction circuit); a potential level converter circuit (e.g., a power supply circuit such as a step-up circuit or a step-down circuit, or a level shifter circuit for changing the potential level of a signal); a voltage source; a current source; a switching circuit; an amplifier circuit (e.g., a circuit that can increase signal amplitude, the amount of current, or the like, an operational amplifier, a differential amplifier circuit, a source follower circuit, or a buffer circuit); a signal generation circuit; a memory circuit; or a control circuit) can be connected between X and Y. For instance, even if another circuit is provided between X and Y, X and Y are regarded as being functionally connected when a signal output from X is transmitted to Y.
Note that an explicit description “X and Y are electrically connected” includes the case where X and Y are electrically connected (i.e., the case where X and Y are connected with another element or another circuit provided therebetween) and the case where X and Y are directly connected (i.e., the case where X and Y are connected without another element or another circuit provided therebetween).
This specification describes a circuit structure in which a plurality of elements are electrically connected to a wiring (a wiring for supplying a constant potential or a wiring for transmitting a signal). For example, in the case where X is directly connected to a wiring and Y is directly connected to the wiring, this specification may describe that X and Y are directly electrically connected to each other.
It can be expressed as, for example, “X, Y, a source (sometimes called one of a first terminal and a second terminal) of a transistor, and a drain (sometimes called the other of the first terminal and the second terminal) of the transistor are electrically connected to each other, and X, the source of the transistor, the drain of the transistor, and Y are electrically connected to each other in this order”. Alternatively, it can be expressed as “a source of a transistor is electrically connected to X; a drain of the transistor is electrically connected to Y; and X, the source of the transistor, the drain of the transistor, and Y are electrically connected to each other in this order”. Alternatively, it can be expressed as “X is electrically connected to Y through a source and a drain of a transistor, and X, the source of the transistor, the drain of the transistor, and Y are provided in this connection order”. When the connection order in a circuit structure is defined by an expression similar to the above examples, a source and a drain of a transistor can be distinguished from each other to specify the technical scope. Note that these expressions are examples and the expression is not limited to these expressions. Here, each of X and Y denotes an object (e.g., a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, or a layer).
Even when independent components are electrically connected to each other in a circuit diagram, one component has functions of a plurality of components in some cases. For example, when part of a wiring also functions as an electrode, one conductive film has both functions of a wiring and an electrode. Thus, electrical connection in this specification includes, in its category, such a case where one conductive film has functions of a plurality of components.
In this specification and the like, a “resistor” can be, for example, a circuit element having a resistance value higher than 0Ω or a wiring having a resistance value higher than 0Ω. Therefore, in this specification and the like, a “resistor” includes a wiring having a resistance value, a transistor in which current flows between a source and a drain, a diode, and a coil. Thus, the term “resistor” can be sometimes replaced with the terms “resistance”, “load”, “region having a resistance value”, or the like. Conversely, the term “resistor”, “load”, or “region having a resistance value” can be sometimes replaced with the term “resistor”. The resistance value can be, for example, preferably higher than or equal to 1 mΩ and lower than or equal to 10Ω, further preferably higher than or equal to 5 mΩ and lower than or equal to 5Ω still further preferably higher than or equal to 10 mΩ and lower than or equal to 1Ω. As another example, the resistance value may be higher than or equal to 1Ω and lower than or equal to 1×109Ω.
In this specification and the like, a “capacitor” can be, for example, a circuit element having an electrostatic capacitance value higher than 0 F, a region of a wiring having an electrostatic capacitance value higher than 0 F, parasitic capacitance, or gate capacitance of a transistor. The term “capacitor”, “parasitic capacitance”, or “gate capacitance” can be replaced with the term “capacitance” in some cases. Conversely, the term “capacitance” can be replaced with the term “capacitor”, “parasitic capacitance”, or “gate capacitance” in some cases. In addition, a “capacitor” (including a “capacitor” with three or more terminals) includes an insulator and a pair of conductors between which the insulator is interposed. Thus, the term “pair of conductors” of “capacitor” can be replaced with “pair of electrodes”, “pair of conductive regions”, “pair of regions”, or “pair of terminals”. In addition, the terms “one of a pair of terminals” and “the other of the pair of terminals” are referred to as a first terminal and a second terminal, respectively, in some cases. Note that the electrostatic capacitance value can be higher than or equal to 0.05 fF and lower than or equal to 10 pF, for example. For another example, the electrostatic capacitance value may be higher than or equal to 1 pF and lower than or equal to 10 μF.
In this specification and the like, a transistor includes three terminals called a gate, a source, and a drain. The gate is a control terminal for controlling the conducting state of the transistor. Two terminals functioning as the source and the drain are input/output terminals of the transistor. One of the two input/output terminals serves as the source and the other serves as the drain on the basis of the conductivity type (n-channel type or p-channel type) of the transistor and the levels of potentials applied to the three terminals of the transistor. Thus, the terms “source” and “drain” can sometimes be replaced with each other in this specification and the like. In this specification and the like, expressions “one of a source and a drain” (or a first electrode or a first terminal) and “the other of the source and the drain” (or a second electrode or a second terminal) are used in description of the connection relation of a transistor. Depending on the transistor structure, a transistor may include a back gate in addition to the above three terminals. In that case, in this specification and the like, one of the gate and the back gate of the transistor may be referred to as a first gate and the other of the gate and the back gate of the transistor may be referred to as a second gate. Moreover, the terms “gate” and “back gate” can be replaced with each other in one transistor in some cases. In the case where a transistor includes three or more gates, the gates may be referred to as a first gate, a second gate, and a third gate in this specification and the like.
In this specification and the like, for example, a transistor with a multi-gate structure having two or more gate electrodes can be used as the transistor. With the multi-gate structure, channel formation regions are connected in series; accordingly, a plurality of transistors are connected in series. Thus, with the multi-gate structure, the amount of off-state current can be reduced, and the withstand voltage of the transistor can be increased (the reliability can be improved). Alternatively, with the multi-gate structure, drain-source current does not change very much even if drain-source voltage changes at the time of an operation in a saturation region, so that a flat slope of voltage-current characteristics can be obtained. By utilizing the flat slope of the voltage-current characteristics, an ideal current source circuit or an active load having an extremely high resistance value can be obtained. Accordingly, a differential circuit, a current mirror circuit, and the like having excellent properties can be obtained.
In this specification and the like, circuit elements such as a “light-emitting device” and a “light-receiving device” sometimes have polarities called an “anode” and a “cathode”. In the case of a “light-emitting device”, the “light-emitting device” can sometimes emit light when a forward bias is applied (a positive potential with respect to a “cathode” is applied to an “anode”). In the case of a “light-receiving device”, current is sometimes generated between an “anode” and a “cathode” when a zero bias or a reverse bias is applied (a negative potential with respect to a “cathode” is applied to an “anode”) and the “light-receiving device” is irradiated with light. As described above, an “anode” and a “cathode” are sometimes regarded as input/output terminals of the circuit elements such as a “light-emitting device” and a “light-receiving device”. In this specification and the like, an “anode” and a “cathode” of the circuit element such as a “light-emitting device” or a “light-receiving device” are sometimes called terminals (a first terminal, a second terminal, and the like). For example, one of an “anode” and a “cathode” is called a first terminal and the other of the “anode” and the “cathode” is called a second terminal in some cases.
The case where a single circuit element is illustrated in a circuit diagram may include a case where the circuit element includes a plurality of circuit elements. For example, the case where a single resistor is illustrated in a circuit diagram may include a case where two or more resistors are electrically connected to each other in series. For another example, the case where a single capacitor is illustrated in a circuit diagram may include a case where two or more capacitors are electrically connected to each other in parallel. For another example, the case where a single transistor is illustrated in a circuit diagram may include a case where two or more transistors are electrically connected to each other in series and their gates are electrically connected to each other. Similarly, for another example, the case where a single switch is illustrated in a circuit diagram may include a case where the switch includes two or more transistors which are electrically connected to each other in series or in parallel and whose gates are electrically connected to each other.
In this specification and the like, a node can be referred to as a terminal, a wiring, an electrode, a conductive layer, a conductor, or an impurity region depending on the circuit structure and the device structure. Furthermore, a terminal or a wiring can be referred to as a node.
In this specification and the like, “voltage” and “potential” can be replaced with each other as appropriate. “Voltage” refers to a potential difference from a reference potential, and when the reference potential is a ground potential, for example, “voltage” can be replaced with “potential”. Note that the ground potential does not necessarily mean 0 V. Moreover, potentials are relative values, and, for example, a potential supplied to a wiring, a potential applied to a circuit or the like, and a potential output from a circuit or the like change with a change of the reference potential.
In this specification and the like, the terms “high-level potential” and “low-level potential” do not mean a particular potential. For example, in the case where two wirings are both described as “functioning as a wiring for supplying a high-level potential”, the levels of the high-level potentials supplied from the wirings are not necessarily equal to each other. Similarly, in the case where two wirings are both described as “functioning as a wiring for supplying a low-level potential”, the levels of the low-level potentials supplied from the wirings are not necessarily equal to each other.
“Current” means a charge transfer phenomenon (electrical conduction); for example, the description “electrical conduction of positively charged particles occurs” can be rephrased as “electrical conduction of negatively charged particles occurs in the opposite direction”. Therefore, unless otherwise specified, “current” in this specification and the like refers to a charge transfer phenomenon (electrical conduction) accompanied by carrier movement. Examples of a carrier here include an electron, a hole, an anion, a cation, and a complex ion, and the type of carrier differs between current flow systems (e.g., a semiconductor, a metal, an electrolyte solution, and a vacuum). The “direction of current” in a wiring or the like refers to the direction in which a carrier with a positive charge moves, and the amount of current is expressed as a positive value. In other words, the direction in which a carrier with a negative charge moves is opposite to the direction of current, and the amount of current is expressed as a negative value. Thus, in the case where the polarity of current (or the direction of current) is not specified in this specification and the like, the description “current flows from element A to element B” can be rephrased as “current flows from element B to element A”. The description “current is input to element A” can be rephrased as “current is output from element A”.
Ordinal numbers such as “first”, “second”, and “third” in this specification and the like are used to avoid confusion among components. Thus, the ordinal numbers do not limit the number of components. In addition, the ordinal numbers do not limit the order of components. In this specification and the like, for example, a “first” component in one embodiment can be referred to as a “second” component in other embodiments or the scope of claims. For another example, a “first” component in one embodiment in this specification and the like can be omitted in other embodiments or the scope of claims.
In this specification and the like, the terms for describing positioning, such as “over” and “under”, are sometimes used for convenience to describe the positional relation between components with reference to drawings. The positional relation between components is changed as appropriate in accordance with the direction in which the components are described. Thus, the positional relation is not limited to the terms described in the specification and the like, and can be described with another term as appropriate depending on the situation. For example, the expression “an insulator positioned over (on) the top surface of a conductor” can be replaced with the expression “an insulator positioned under (on) a bottom surface of a conductor” when the direction of a drawing showing these components is rotated by 180°.
Furthermore, the terms “over” and “under” do not necessarily mean that a component is placed directly over or directly under and in direct contact with another component. For example, the expression “electrode B over insulating layer A” does not necessarily mean that the electrode B is formed over and in direct contact with the insulating layer A, and does not exclude the case where another component is provided between the insulating layer A and the electrode B. Similarly, for example, the expression “electrode B above insulating layer A” does not necessarily mean that the electrode B is formed above and in direct contact with the insulating layer A, and does not exclude the case where another component is provided between the insulating layer A and the electrode B. Similarly, for example, the expression “electrode B under insulating layer A” does not necessarily mean that the electrode B is formed under and in direct contact with the insulating layer A, and does not exclude the case where another component is provided between the insulating layer A and the electrode B.
In this specification and the like, components arranged in a matrix and their positional relation are sometimes described using terms such as “row” and “column”. The positional relation between components is changed as appropriate in accordance with the direction in which the components are described. Thus, the positional relation is not limited to the terms described in the specification and the like, and can be described with another term as appropriate depending on the situation. For example, the term “row direction” can be replaced with the term “column direction” when the direction of the diagram is rotated by 90°.
In this specification and the like, the terms “film” and “layer” can be interchanged with each other depending on the situation. For example, the term “conductive layer” can be changed into the term “conductive film” in some cases. For another example, the term “insulating film” can be changed into the term “insulating layer” in some cases. Alternatively, the terms “film” and “layer” are not used and can be interchanged with another term depending on the case or the situation. For example, the term “conductive layer” or “conductive film” can be changed into the term “conductor” in some cases. For another example, the term “insulating layer” or “insulating film” can be changed into the term “insulator” in some cases.
In this specification and the like, the terms “electrode”, “wiring”, “terminal”, and the like do not limit the functions of such components. For example, an “electrode” is used as part of a “wiring” in some cases, and vice versa. Furthermore, the term “electrode” or “wiring” also includes, for example, the case where a plurality of “electrodes” or “wirings” are formed in an integrated manner. For example, a “terminal” is used as part of a “wiring” or an “electrode” in some cases, and vice versa. Furthermore, the term “terminal” also includes the case where a plurality of “electrodes”, “wirings” or “terminals” are formed in an integrated manner, for example. Therefore, for example, an “electrode” can be part of a “wiring” or a “terminal”, and a “terminal” can be part of a “wiring” or an “electrode”. Moreover, the term “electrode”, “wiring”, or “terminal” is sometimes replaced with the term “region” depending on the case.
In this specification and the like, the terms “wiring”, “signal line”, and “power supply line” can be interchanged with each other depending on the case or the situation. For example, the term “wiring” can be changed into the term “signal line” in some cases. As another example, the term “wiring” can be changed into the term “power supply line” or the like in some cases. Conversely, the term “signal line” or “power supply line” can be changed into the term “wiring” in some cases. The term “power supply line” can be changed into the term “signal line” in some cases. Conversely, the term “signal line” can be changed into the term “power supply line” in some cases. The term “potential” that is applied to a wiring can be changed into the term “signal” depending on the case or the situation. Conversely, the term “signal” can be changed into the term “potential” in some cases.
In this specification and the like, a metal oxide is an oxide of a metal in a broad sense. Metal oxides are classified into an oxide insulator, an oxide conductor (including a transparent oxide conductor), an oxide semiconductor (also simply referred to as an OS), and the like. For example, in the case where a metal oxide is included in a channel formation region of a transistor, the metal oxide is referred to as an oxide semiconductor in some cases. That is, when a metal oxide can form a channel formation region of a transistor that has at least one of an amplifying function, a rectifying function, and a switching function, the metal oxide can be referred to as a metal oxide semiconductor. In the case where an OS transistor is mentioned, the OS transistor can also be referred to as a transistor including a metal oxide or an oxide semiconductor.
In this specification and the like, a metal oxide containing nitrogen is also collectively referred to as a metal oxide in some cases. A metal oxide containing nitrogen may be called a metal oxynitride.
In this specification and the like, an impurity in a semiconductor refers to, for example, an element other than a main component of a semiconductor layer. For example, an element with a concentration of lower than 0.1 atomic % is an impurity. When an impurity is contained, for example, at least one of an increase in the density of defect states in a semiconductor, a decrease in carrier mobility, and a decrease in crystallinity occurs in some cases. In the case where the semiconductor is an oxide semiconductor, examples of an impurity that changes characteristics of the semiconductor include Group 1 elements, Group 2 elements, Group 13 elements, Group 14 elements, Group 15 elements, and transition metals other than the main components; specific examples are hydrogen (contained also in water), lithium, sodium, silicon, boron, phosphorus, carbon, and nitrogen. Specifically, in the case where the semiconductor is a silicon layer, examples of an impurity that changes characteristics of the semiconductor include Group 1 elements, Group 2 elements, Group 13 elements, and Group 15 elements (except oxygen and hydrogen).
In this specification and the like, a switch has a function of being in a conducting state (on state) or a non-conducting state (off state) to control whether current flows or not. Alternatively, a switch has a function of selecting and changing a current path. Thus, a switch may have two terminals or three or more terminals through which current flows, in addition to a control terminal. For example, an electrical switch or a mechanical switch can be used. That is, a switch can be any element capable of controlling a current, and is not limited to a particular element.
Examples of an electrical switch include a transistor (e.g., a bipolar transistor and a MOS transistor), a diode (e.g., a PN diode, a PIN diode, a Schottky diode, a MIM (Metal Insulator Metal) diode, a MIS (Metal Insulator Semiconductor) diode, and a diode-connected transistor), and a logic circuit in which such elements are combined. Note that in the case of using a transistor as a switch, a “conducting state” of the transistor refers to a state where a source electrode and a drain electrode of the transistor can be regarded as being electrically short-circuited or a state where current can flow between the source electrode and the drain electrode. Furthermore, a “non-conducting state” of the transistor refers to a state where the source electrode and the drain electrode of the transistor can be regarded as being electrically disconnected. Note that in the case where a transistor operates just as a switch, there is no particular limitation on the polarity (conductivity type) of the transistor.
An example of a mechanical switch is a switch using a MEMS (micro electro mechanical systems) technology. Such a switch includes an electrode that can be moved mechanically and controls conduction and non-conduction with movement of the electrode.
In this specification and the like, a device formed using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device having an MM (metal mask) structure. In this specification and the like, a device formed without using a metal mask or an FMM may be referred to as a device having an MML (metal maskless) structure.
In this specification and the like, a structure in which light-emitting layers in light-emitting devices of different colors (here, blue (B), green (G), and red (R)) are separately formed or separately patterned may be referred to as an SBS (Side By Side) structure. In this specification and the like, a light-emitting device capable of emitting white light may be referred to as a white-light-emitting device. Note that a combination of white-light-emitting devices with coloring layers (e.g., color filters) enables a full-color display apparatus.
Light-emitting devices can be classified roughly into a single structure and a tandem structure. A device with a single structure includes one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably includes one or more light-emitting layers. When white light emission is obtained using two light-emitting layers, the two light-emitting layers are selected such that emission colors of the light-emitting layers are complementary colors. For example, when an emission color of a first light-emitting layer and an emission color of a second light-emitting layer are complementary colors, a light-emitting device can be configured to emit white light as a whole. When white light emission is obtained using three or more light-emitting layers, a light-emitting device is configured to emit white light as a whole by combining emission colors of the three or more light-emitting layers.
A device with a tandem structure includes two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, the structure is made such that light from light-emitting layers of the plurality of light-emitting units can be combined to be white light. Note that a structure for obtaining white light emission is similar to that in the case of a single structure. In the device with a tandem structure, an intermediate layer such as a charge-generation layer is preferably provided between the plurality of light-emitting units.
When the above white-light-emitting device (having a single structure or a tandem structure) and the above light-emitting device having an SBS structure are compared to each other, the light-emitting device having an SBS structure can have lower power consumption than the white-light-emitting device. The light-emitting device having an SBS structure is suitably used in the case where the power consumption is required to be low. Meanwhile, the white-light-emitting device is suitable in terms of lower manufacturing cost or higher manufacturing yield because the manufacturing process of the white-light-emitting device is simpler than that of the light-emitting device having an SBS structure.
In this specification, “parallel” indicates a state where two straight lines are placed at an angle greater than or equal to −10° and less than or equal to 10°. Thus, the case where the angle is greater than or equal to −5° and less than or equal to 5° is also included. In addition, “approximately parallel” or “substantially parallel” indicates a state where two straight lines are placed at an angle greater than or equal to −30° and less than or equal to 30°. Moreover, “perpendicular” indicates a state where two straight lines are placed at an angle greater than or equal to 80° and less than or equal to 100°. Thus, the case where the angle is greater than or equal to 85° and less than or equal to 95° is also included. Furthermore, “approximately perpendicular” or “substantially perpendicular” indicates a state where two straight lines are placed at an angle greater than or equal to 60° and less than or equal to 120°.
In this specification and the like, one embodiment of the present invention can be constituted by appropriately combining a structure described in an embodiment with any of the structures described in the other embodiments. In addition, in the case where a plurality of structure examples are described in one embodiment, the structure examples can be combined as appropriate.
Note that a content (or part of the content) described in one embodiment can be applied to, combined with, or replaced with at least one of another content (or part of the content) in the embodiment and a content (or part of the content) described in one or a plurality of different embodiments.
Note that in each embodiment, a content described in the embodiment is a content described using a variety of diagrams or a content described with text disclosed in the specification.
Note that by combining a diagram (or part thereof) described in one embodiment with at least one of another part of the diagram, a different diagram (or part thereof) described in the embodiment, and a diagram (or part thereof) described in one or a plurality of different embodiments, much more diagrams can be provided.
Embodiments described in this specification are described with reference to the drawings. Note that the embodiments can be implemented in many different modes, and it will be readily appreciated by those skilled in the art that modes and details can be changed in various ways without departing from the spirit and scope thereof. Therefore, the present invention should not be interpreted as being limited to the description in the embodiments. Note that in the structures of the invention in the embodiments, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and repeated description thereof is omitted in some cases. In perspective views and the like, description of some components may be omitted for clarity of the drawings.
In this specification and the like, when a plurality of components are denoted with the same reference numerals, and in particular need to be distinguished from each other, an identification sign such as “_1”, “[n]”, or “[m,n]” is sometimes added to the reference numerals. Components denoted with identification signs such as “_1”, “[n]”, and “[m,n]” in the drawings and the like are sometimes described without such identification signs in this specification and the like when the components do not need to be distinguished from each other.
In the drawings in this specification, the size, the layer thickness, or the region is exaggerated for clarity in some cases. Therefore, they are not limited to the illustrated scale. The drawings are schematic views showing ideal examples, and embodiments of the present invention are not limited to shapes, values, or the like shown in the drawings. For example, variations in signal, voltage, or current due to noise, variations in signal, voltage, or current due to difference in timing, or the like can be included.
In this embodiment, a display apparatus of one embodiment of the present invention and an operation method of the display apparatus will be described.
In this specification and the like, when the ratio of the number of pixels in the row direction to the number of pixels in the column direction of the display apparatus DSP illustrated in
The aspect ratio of the image displayed on the display portion DIS is P:Q (P and Q are positive real numbers excluding 0 and P is greater than or equal to Q). When P/Q is a value larger than X/Y, the image is displayed on the display portion DIS in contact with the left edge and the right edge of the display portion DIS. Then, black is displayed in a remaining space of the display portion DIS where the image is displayed. In
Note that in the case where P/Q has the same value as X/Y, the aspect ratio of the display apparatus DSP and the aspect ratio of an image displayed on the display portion DIS agree with each other; thus, the image is displayed on the display portion DIS of the display apparatus DSP without a black region in some cases.
In
Specifically, for example, the character string LA1 of the black region BA1 may be subtitles for an image displayed on the image region MA, and the character string LA2 of the black region BA2 may be a notification message. The display apparatus DSP may display the character string LA1 only on the black region BA1 without displaying the character string LA2 on the black region BA2.
Here, the display apparatus DSP in which the display portion DIS is divided into a plurality of display regions is considered. Specifically, as illustrated in
Since the display region ARA in the image region MA is a region where an image is displayed, a selection signal and an image signal are frequently input to pixel circuits included in the display region ARA in the image region MA. Thus, the frame frequency of the display region ARA in the image region MA becomes high. In particular, in the case where the image is a moving image, the frame frequency of the display region ARA in the image region MA is sometimes higher than that of a still image.
On the other hand, the display region ARA included in each of the black region BA1 and the black region BA2 functions as a region for displaying black, the character string LA1, and the character string LA2. In the case where text information displayed on the display apparatus is read by a person, there is no need to increase the frame frequency of an image displaying the text information. For example, the frame frequency of the display region ARA included each of in the black region BA1 and the black region BA2 can be greater than or equal to 1 Hz and lower than or equal to 10 Hz. Alternatively, the frame frequency may be higher than or equal to 1/10 Hz and lower than or equal to 10 Hz, or higher than or equal to 1/60 Hz and lower than or equal to 10 Hz. Thus, the character string LA1 and the character string LA2 displayed on the black region BA1 and the black region BA2, respectively, can be rewritten with a fewer times (a lower frame frequency) than an image (particularly in a moving image) displayed on the image region MA.
In the case where one or both of the black region BA1 and the black region BA2 displays no character string (performs black display), the driver circuit corresponding to the display region ARA where no character string is displayed may be stopped temporarily. The driver circuit for the display region ARA is stopped so as not to display a character string on one or both of the black region BA1 and the black region BA2, enabling a reduction in power consumption of the driver circuit.
In addition, the character string LA1 and the character string LA2 may contain a still image such as an icon or Emoji (pictogram) in addition to text. Depending on the case, the character string LA1 and the character string LA2 may contain only an icon or Emoji (pictogram), without containing text. In the case where a person watches a still image displayed on the display apparatus, it is unnecessary to increase the frame frequency as in the case of displaying text; thus, the character string LA1 and the character string LA2 each including a still image can be displayed on the black region BA1 and the black region BA2. Note that although the frame frequency of the black region BA1 and the black region BA2 is lower than the frame frequency of the image region MA, the character string LA1 or the character string LA2 displayed on the black region BA1 or the black region BA2 may contain an icon or Emoji containing a moving image or animation, if the image quality is acceptable.
Next, a specific structure example of the display apparatus DSP in
The wiring layer LINL is provided over the circuit layer SICL, and the pixel layer PXAL is provided over the wiring layer LINL. Note that the pixel layer PXAL overlaps with a region including a driver circuit region DRV described later.
The circuit layer SICL includes a substrate BS and the driver circuit region DRV.
As the substrate BS, a semiconductor substrate (e.g., a single crystal substrate) formed of silicon or germanium can be used, for example. Besides the semiconductor substrate, for example, an SOI (Silicon On Insulator) substrate, a glass substrate, a quartz substrate, a plastic substrate, a sapphire glass substrate, a metal substrate, a stainless steel substrate, a substrate including stainless steel foil, a tungsten substrate, a substrate including tungsten foil, a flexible substrate, an attachment film, or paper or a base material film containing a fibrous material can be used as the substrate BS. Examples of the glass substrate include barium borosilicate glass, aluminoborosilicate glass, and soda lime glass. Examples of the flexible substrate, the attachment film, the base material film, and the like include plastics typified by polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyether sulfone (PES), and polytetrafluoroethylene (PTFE). Another example is a synthetic resin such as an acrylic resin. Other examples include polypropylene, polyester, polyvinyl fluoride, and polyvinyl chloride. Other examples include polyamide, polyimide, aramid, an epoxy resin, an inorganic vapor deposition film, and paper. Note that in the case where the manufacturing process of the display apparatus DSP includes heat treatment, a highly heat-resistant material is preferably selected for the substrate BS.
In the description of this embodiment, the substrate BS is a semiconductor substrate containing silicon or the like as a material. Therefore, a transistor included in the driver circuit region DRV can be a transistor including silicon in a channel formation region (hereinafter referred to as a Si transistor).
The driver circuit region DRV is provided over the substrate BS.
The driver circuit region DRV includes, for example, a driver circuit for driving a pixel included in the pixel layer PXAL to be described later. Note that a specific structure example of the driver circuit region DRV will be described later.
The wiring layer LINL is provided over the circuit layer SICL.
For example, a wiring is provided in the wiring layer LINL. The wiring included in the wiring layer LINL functions as, for example, a wiring that electrically connects the driver circuit included in the driver circuit region DRV provided below the wiring layer LINL and the circuit included in the pixel layer PXAL provided above the wiring layer LINL.
The pixel layer PXAL includes, for example, a plurality of pixels. The plurality of pixels may be arranged in a matrix in the pixel layer PXAL.
Each of the plurality of pixels can express one color or a plurality of colors. In particular, the plurality of colors can be, for example, three colors of red (R), green (G), and blue (B). Alternatively, the plurality of colors may be one or more of, for example, red (R), green (G), blue (B), cyan (C), magenta (M), yellow (Y), and white (W). Note that in the case where each of pixels expressing different colors is called a subpixel and white is expressed by a plurality of subpixels expressing different colors, the plurality of subpixels are collectively called a pixel in some cases. In this specification and the like, a subpixel is referred to as a pixel for convenience in some cases.
For example, in the case where the display portion DIS is divided into 32 regions, m=4 and n=8 may be substituted into
Here, in the case where the display portion DIS of the display apparatus DSP in
Since the display portion DIS in the display apparatus DSP in
The driver circuit region DRV in the display apparatus DSP in
Each of the circuit region ARD[1,1] to the circuit region ARD[m,n] includes a driver circuit SD and a driver circuit GD. For example, the driver circuit SD and the driver circuit GD included in a circuit region ARD[i,j] (not illustrated in
The driver circuit GD serves as, for example, a gate driver circuit that selects a plurality of pixels, which are destinations to which image signals are transmitted, in the corresponding display region ARA.
Note that the display apparatus DSP illustrated in
For example, as illustrated in
A wiring is provided in the region LIA, as an example. The wiring included in the region LIA may be electrically connected to a wiring included in the wiring layer LINL. At this time, the display apparatus DSP may have a structure in which a circuit included in the driver circuit region DRV and a circuit included in the pixel layer PXAL are electrically connected to each other through the wiring included in the region LIA and the wiring included in the wiring layer LINL. The display apparatus DSP may have a structure in which the circuit included in the driver circuit region DRV is electrically connected to the wiring or a circuit included in the region LIA through the wiring included in the wiring layer LINL.
The region LIA may include a GPU (Graphics Processing Unit), as an example. In the case where the display apparatus DSP includes a touch panel, the region LIA may include a sensor controller that controls a touch sensor included in the touch panel. The region LIA may also include a controller having a function of processing an input signal from the outside of the display apparatus DSP. The region LIA may include a voltage generation circuit for generating voltage supplied to the above-described circuit and a driver circuit included in the circuit region ARD.
In the case where a light-emitting device containing an organic EL material is used as a display element of the display apparatus DSP, an EL correction circuit may be included in the region LIA. The EL correction circuit has a function of appropriately adjusting the amount of current input to the light-emitting device containing an organic EL material, for example. Since the emission luminance of the light-emitting device containing an organic EL material is proportional to current, the luminance of light emitted from the light-emitting device is sometimes lower than a desired luminance when the characteristics of a driving transistor electrically connected to the light-emitting device are not favorable. For example, the EL correction circuit monitors the amount of current flowing through the light-emitting device and increases the amount of current flowing through the light-emitting device when the amount of current is smaller than a desired amount of current, whereby the luminance of light emitted from the light-emitting device can be increased. By contrast, when the amount of current is larger than a desired amount of current, the amount of current flowing through the light-emitting device may be adjusted to be small.
In the case where a liquid crystal element is used as the display element of the display apparatus DSP, a gamma correction circuit may be included in the region LIA.
In the display apparatus DSP illustrated in
As in
In
Note that in
Although
The position at which the black region displayed on the display portion DIS is provided in the display apparatus of one embodiment of the present invention is not limited to the examples illustrated in
For example, in the case where the aspect ratio of the display apparatus DSP is set to X:Y and the aspect ratio of an image displayed on the display portion DIS is set to P:Q, the image is displayed on the display portion DIS as illustrated in
In the display apparatus of one embodiment of the present invention, the black region displayed on the display portion DIS may be provided in a manner in which the image region MA for displaying an image of the display portion DIS is determined first and the black region is provided in a remaining region of the display portion DIS. In that case, the image region MA preferably includes a center portion of the display portion DIS. Thus, the display apparatus DSP preferably includes a region where the center portion of the display portion DIS and part of a plurality of display regions ARA included in the image region MA overlap with each other.
Note that in this specification and the like, the center portion of the display portion DIS refers to a region including an intersection point of two diagonal lines of the display portion DIS. Specifically, when the length of the diagonal line (the diagonal size) of the display portion DIS is L, the center portion of the display portion DIS can be defined as a circular region with the intersection point of the two diagonal lines as a center. Note that the radius of the circle is preferably lower than or equal to L/8, further preferably lower than or equal to L/16, still further preferably lower than or equal to L/32, yet still further preferably lower than or equal to L/64, or yet still further preferably lower than or equal to L/128.
Accordingly, the shape of the black region is not limited to that in
For example, as illustrated in
Although
The shape of the black region provided in the display portion DIS is not limited to those in
When an image is displayed on the display portion DIS in the display apparatus DSP described above, it is preferable that the image be displayed on the display portion DIS by being enlarged or reduced to fit in the display portion DIS without changing the aspect ratio of the image. Depending on circumstances, when an image is displayed on the display portion DIS, the image may be displayed on the display portion DIS by being enlarged or reduced to fit in the display portion DIS by changing the aspect ratio of the image.
In the display apparatus DSP described above, the image displayed on the display portion DIS does not necessarily fit in the display portion DIS. Specifically, the display apparatus DSP may be configured to display only a part of the image, not the entire image, on the display section DIS. For example, as illustrated in
Next, examples of components included in the display apparatus DSP will be described.
The peripheral circuit PRPH includes a circuit GDS including a plurality of driver circuits GD, a circuit SDS including a plurality of driver circuits SD, a distribution circuit DMG, a distribution circuit DMS, a control unit CTR, a memory device MD, a voltage generation circuit PG, a timing controller TMC, a clock signal generation circuit CKS, an image processing unit GPS, and an interface INT.
Note that in the display apparatus DSP, the driver circuit region DRV including the plurality of driver circuits GD overlaps with the pixel layer PXAL including the plurality of display regions ARA as illustrated in
The peripheral circuit PRPH is included in the circuit layer SICL illustrated in
In the case of the display apparatus DSP in
In the case of the display apparatus DSP in
The distribution circuit DMG, the distribution circuit DMS, the control unit CTR, the memory device MD, the voltage generation circuit PG, the timing controller TMC, the clock signal generation circuit CKS, the image processing unit GPS, and the interface INT transmit and receive signals mutually through a bus wiring BW.
The interface INT has, for example, a function of a circuit for taking image information output from an external device for displaying an image on the display apparatus DSP into the circuit in the peripheral circuit PRPH. Examples of the external device include a recording media player and a nonvolatile memory device such as a hard disk drive (HDD) and a solid state drive (SSD). The interface INT may be a circuit that outputs a signal from a circuit inside the peripheral circuit PRPH to a device outside the display apparatus DSP.
In the case where image information is input from the external device to the interface INT by wireless communication, the interface INT can include, for example, an antenna receiving the image information, a mixer, an amplifier circuit, and an analog-digital conversion circuit.
The control unit CTR has functions of processing control signals transmitted from the external device through the interface INT and controlling circuits included in the peripheral circuit PRPH.
The memory device MD has a function of temporarily holding data and an image signal. In that case, the memory device MD serves as a frame memory (sometimes referred to as a frame buffer), for example. The memory device MD may have a function of temporarily holding at least one piece of data transmitted from the external device through the interface INT and data processed in the control unit CTR. In that case, at least one of an SRAM (Static Random Access Memory) and a DRAM (Dynamic Random Access Memory) can be used as the memory device MD, for example.
The voltage generation circuit PG has a function of generating power supply voltages supplied to a pixel circuit included in the display portion DIS and a circuit included in the peripheral circuit PRPH. Note that the power generation circuit PG may have a function of selecting a circuit to which a voltage is to be supplied. For example, the voltage generation circuit PG stops supply of voltage to the circuit GDS, the circuit SDS, the image processing unit GPS, the timing controller TMC, and the clock signal generation circuit CKS in a period in which a still image is displayed on the display portion DIS, enabling a reduction in the total power consumption of the display apparatus DSP.
The timing controller TMC has a function of generating timing signals used in the plurality of driver circuits GD included in the circuit GDS and the plurality of driver circuits SD included in the circuit SDS. For the generation of the timing signal, a clock signal generated by the clock signal generation circuit CKS can be used.
The image processing unit GPS has a function of performing processing for drawing an image on the display portion DIS. For example, the image processing unit GPS may include a GPU (Graphics Processing Unit). Specifically, the image processing unit GPS is configured to perform pipeline processing in parallel and can thus perform high-speed processing of image data to be displayed on the display portion DIS. The image processing unit GPS can also have a function of a decoder for decoding an encoded image.
In
The image processing unit GPS may also have a function of correcting color tone of an image displayed on the display portion DIS. In that case, the image processing unit GPS is preferably provided with one or both of a dimming circuit and a toning circuit. In the case where the display pixel circuit included in the display portion DIS includes an organic EL element, the circuit GP1 may be provided with an EL correction circuit.
The above-described image correction may be performed using artificial intelligence. For example, a current flowing in a display device included in a pixel (or a voltage applied to the display device) may be monitored and acquired, an image displayed on the display portion DIS may be acquired with an image sensor or the like, the current (or voltage) and the image may be used as input data in an arithmetic operation of the artificial intelligence (e.g., an artificial neural network), and the output result may be used to determine whether the image is needed to be corrected.
Such an arithmetic operation of artificial intelligence can be applied not only to image correction but also to upconversion processing (downconversion processing) of image data. Accordingly, upconversion (downconversion) of low screen resolution image data can be performed in accordance with the screen resolution of the display portion DIS, which enables a high-display-quality image to be displayed on the display portion DIS.
Note that for the above-described arithmetic operation of artificial intelligence, the GPU included in the image processing unit GPS can be used, for example. That is, the GPU can be used to perform arithmetic operations for various kinds of correction (e.g., color irregularity correction and upconversion).
Note that in this specification and the like, such a GPU performing an arithmetic operation of artificial intelligence is referred to as an AI accelerator. That is, the GPU may be replaced with an AI accelerator in the description in this specification and the like.
The clock signal generation circuit CKS has a function of generating a clock signal. The clock signal generation circuit CKS includes a circuit CK1 and a circuit CK2. For example, the circuit CK1 has a function of generating a clock signal for displaying a desired image on the image region MA provided in the display portion DIS, and for example, the circuit CK2 has a function of generating a clock signal for displaying an image (black and character string) on the black region BA provided in the display portion DIS.
Note that an image (black and character string) displayed on the black region BA provided in the display portion DIS can be displayed with a smaller number of rewriting times than that in the image region MA. Thus, the frame frequency of the clock signal generated in the circuit CK2 is preferably lower than the frame frequency of the clock signal generated in the circuit CK1. Accordingly, the circuit CK1 and the circuit CK2 may each be configured so as to change the frequency of clock signals generated therein.
The distribution circuit DMG has a function of transmitting a signal received from the bus wiring BW to one of the driver circuit GD for driving pixels included in the image region MA and the driver circuit GD for driving pixels included in the black region BA in accordance with the content of the signal.
The distribution circuit DMS has a function of transmitting a signal received from the bus wiring BW to one of the driver circuit SD for driving pixels included in the image region MA and the driver circuit SD for driving pixels included in the black region BA in accordance with the content of the signal.
Although not illustrated in
Note that the configuration of the peripheral circuit PRPH of the display apparatus DSP illustrated in
Next, an example of an operation method of the display apparatus of one embodiment of the present invention is described.
Step ST1 includes a step in which the control unit CTR obtains an aspect ratio of an image to be displayed on the display apparatus DSP. The image can be image information input from an external device to the interface INT.
Step ST2 includes a step in which the control unit CTR divides the display portion DIS into the image region MA for displaying an image on the display portion DIS and the black region BA where no image is displayed, on the basis of the aspect ratio of the display apparatus DSP and the aspect ratio of the image. Specifically, in this step, one of the image region MA and the black region BA is assigned to each of the display region ARA[1,1] to the display region ARA[m,n] included in the display portion DIS. Thus, an address of the display region ARA serving as the image region MA and an address of the display region ARA serving as the black region BA are determined among the display region ARA[1,1] to the display region ARA[m,n] included in the display portion DIS.
Note that the address of the display region ARA serving as the image region MA and the address of the display region ARA serving as the black region BA may be temporarily stored in the memory device MD.
Step ST3 includes a step in which information including the address of the display region ARA to serve as the image region MA and the address of the display region ARA to serve as the black region BA is transmitted to each of the distribution circuit DMG and the distribution circuit DMS, and the driver circuit GD and the driver circuit SD for driving the pixel circuit included in the image region MA are selected and the driver circuit GD and the driver circuit SD for driving the pixel circuit included in the black region BA are selected. Specifically, in this step, a plurality of driver circuits GD included in the distribution circuit DMG are divided into driver circuits GD for driving the pixel circuit of the display region ARA serving as the image region MA and driver circuits GD for driving the pixel circuit of the display region ARA serving as the black region BA. Similarly, in this step, a plurality of driver circuits SD included in the distribution circuit DMS are divided into driver circuits SD for driving the pixel circuit of the display region ARA serving as the image region MA and driver circuits SD for driving the pixel circuit of the display region ARA serving as the black region BA.
Thus, the distribution circuit DMG can receive a selection signal corresponding to the display region ARA of the image region MA and transmit the selection signal to the driver circuit GD for driving the pixel circuit included in the display region ARA of the image region MA, and the distribution circuit DMG can receive a selection signal corresponding to the display region ARA of the black region BA and transmit the selection signal to the driver circuit GD for driving the pixel circuit included in the black region ARA serving as the black region BA.
Similarly, the distribution circuit DMS can receive an image signal to be displayed on the display region ARA of the image region MA and transmit the image signal to the driver circuit GD corresponding to the display region ARA of the image region MA, and the distribution circuit DMS can receive the image signal (black and character string) displayed on the black region BA and transmit the image signal to the driver circuit GD corresponding to the display region ARA of the black region BA.
As described above, the driver circuits are divided into the driver circuits GD corresponding to the display region ARA included in the image region MA and the driver circuits GD corresponding to the display region ARA included in the black region BA, whereby the frame frequencies can be different values between the display region ARA included in the image region MA and the display region ARA included in the black region BA. In particular, the number of times of rewriting display images in the display region ARA included in the black region BA (displaying black or a character string) can be smaller than that in the display region ARA included in the image region MA (displaying a still image or a moving image); thus, the frame frequency in the display region ARA included in the black region BA can be lower than that in the display region ARA included in the image region MA.
In Step ST4, generation of an image signal for displaying an image on the image region MA of the display portion DIS by the image processing unit GPS and generation of an image signal for displaying an image (black, character string) on the black region BA of the display portion DIS are performed.
For example, generation of an image signal for displaying an image on the image region MA of the display portion DIS is performed by the circuit GP1 included in the image processing unit GPS. In the circuit GP1, for example, one or both of light adjustment and color adjustment are performed on an image displayed on the display portion DIS. In the case where the display pixel circuit included in the display portion DIS includes an organic EL element, the circuit GP1 may be provided with an EL correction circuit. The generated image signal is transmitted to the memory device MD or the distribution circuit DMS.
For example, generation of an image signal for displaying an image on the black region BA of the display portion DIS is performed by the circuit GP2 included in the image processing unit GPS. The circuit GP2 obtains image data containing a character string transmitted from the interface INT and generates an image signal (black and character string) from the image data, for example. The generated image signal (black and character string) is transmitted to the memory device MD or the distribution circuit DMS.
Step ST5 includes a step of transmitting the image signal generated by the circuit GP1 in Step ST4 to the display region ARA of the image region MA in the display portion DIS and transmitting the image signal (black and a character string) generated by the circuit GP2 in Step ST4 to the display region ARA of the black region BA in the display portion DIS. Thus, the display apparatus DSP can display an image on the image region MA and display black and a character string on the black region BA.
Note that the operation method of the structure example described in this specification and the like is not limited to Step ST1 to Step ST5 shown in
Note that this embodiment can be combined with any of the other embodiments in this specification as appropriate.
In this embodiment, an electronic device including the display apparatus described in the above embodiment is described. Note that the electronic device can be a head-mounted display, for example.
When a user wears a head-mounted display, an image (light) displayed on the display apparatus in the head-mounted display is given to the eyes of the user. In the case where a speaker (a sound output portion) is provided in a head-mounted display, sound from the speaker is supplied to the user's ear.
By increasing the definition of the display portion of the display apparatus or the color reproducibility of the display portion, the sense of reality and the sense of immersion with the head-mounted display can be improved. When a headphone that can reduce sound (e.g., environmental sound) from the outside is used as the speaker, the sense of reality and the sense of immersion with the head mounted display can be further improved.
However, by improving the sense of reality and the sense of immersion, a user wearing a head-mounted display is less likely to obtain information on the outside environment in some cases. For example, a user wearing the head-mounted display cannot see the surroundings of the user, and thus the user cannot notice a change in the surroundings in some cases. Specifically, when another person approaches a user wearing the head-mounted display, the user cannot notice the approach of the person. For another example, when another person calls the user wearing the head-mounted display, the user cannot notice the call in some cases. Furthermore, for example, a user wearing the head-mounted display cannot notice sounds such as call alerts (e.g., intercom sounds), alarm sounds (e.g., sounds of gas leak alarm, fire alarm, and emergency earthquake warning), and surrounding environmental sounds in some cases.
One embodiment of the present invention is an electronic device considered in view of the above problems. Specifically, one embodiment of the present invention is an electronic device (head-mounted display) with which a user is capable of obtaining information on the outside environment in wearing the electronic device (head-mounted display).
The head-mounted display HMD illustrated in
For example, the description of the display apparatus DSP described in Embodiment 1 is referred to for the display apparatus DSP.
The screen size of the display apparatus DSP can be 0.99 inches, 1.50 inches, and 2 inches, for example. The screen resolution of the display apparatus DSP can be any one of 8K UHD (8K Ultra High Definition, 8K4K) (7680×4320), UHD (Ultra High Definition, 4K2K) (3840×2160), and FHD (Full High Definition) (1920×1080).
In the display portion of the display apparatus DSP in
The sound output portion SOP has a function of supplying sound to the user UR, for example. The sound can be a sound of application launched in the head-mounted display HMD. The sound output portion SOP can be a speaker.
The sound input portion SIP has a function of obtaining surrounding sound (outside sound) of the user UR wearing the head-mounted display HMD, for example. The sound is converted into an electric signal and processed by an internal circuit of the head-mounted display HMD. For example, the sound input portion SIP obtains sound SND generated in the outside and processes the sound SND as input data by an internal circuit of the head-mounted display HMD. The sound input portion SIP can be a microphone, for example.
Examples of the sound SND include another person's voice (call), intercom sounds, and warning sound.
When the sound SND is input to the sound input portion SIP, the internal circuit of the head-mounted display HMD generates text information on the basis of the sound SND. Next, an image including a character string LA is generated using the generated text information. Thus, the image including the character string LA can be displayed on the black region BA of the display portion DIS included in the display apparatus DSP.
For example, when the sound SND is subjected to another person's voice (call), the generated character string LA can be “A (the name of another person) is calling you” or “someone is calling you”. Furthermore, for example, when the sound SND is an intercom sound, the generated string LA can be “You have a guest” or “There is someone to see you”. For example, when the sound SND is an alarm sound, the generated character string LA can be “Gas leakage alarm” or “Fire warning”, “Earthquake early warning”.
Although the head-mounted display HMD illustrated in
The sensor SNC can be an image sensor capable of receiving at least one of visible light and infrared rays, for example.
Note that
By capturing an image of another person OTH taken by the sensor SNC, the internal circuit of the head-mounted display HMD generates text information on the basis of a content captured. Next, an image including the character string LA is generated using the generated text information. Thus, the image including the character string LA can be displayed on the black region BA of the display portion DIS included in the display apparatus DSP.
For example, when the sensor SNC detects the approach of another person OTH, the generated character string LA can be “Person approaching” or “Person nearby”, so that an attention can be given to the user UR.
Although
Note that in the head-mounted display HMD in
One embodiment of the present invention may be a structure of the head-mounted display HMD in which notification information transmitted to the information terminal is displayed on the black region BA of the display portion DIS, for example. Examples of the information terminal include a wearable terminal, a portable terminal including a smartphone, a tablet terminal, and a desktop terminal.
For example, one embodiment of the present invention may be a head-mounted display HMD including an antenna ANT as illustrated in
Examples of the notification information include notification of E-mails and SNS (Social Networking Service), news, update information of applications, and update information of an operating system.
When the information terminal SMP obtains notification information, the information terminal SMP transmits a wireless signal WV to the antenna ANT of the head-mounted display HMD. The wireless signal WV contains the notification information obtained by the information terminal SMP. When the wireless signal WV is received by the antenna ANT, the head-mounted display HMD obtains the notification information from the wireless signal WV and generates text information on the basis of the notification information. Next, an image including the character string LA is generated using the generated text information. After that, the image including the character string LA can be displayed on the black region BA of the display portion DIS included in the display apparatus DSP. Accordingly, the user UR can notice the notification information transmitted to the information terminal SMP even when wearing the head-mounted display HMD.
Next, examples of components included in the head-mounted display HMD of any one of
The head-mounted display HMD has a structure in which the display apparatus DSP, the sensor SNC, the sound output portion SOP, the sound input portion SIP, the antenna ANT, the conversion portion HKB, the image generation portion PGP, the control portion CP, and the memory unit MU transmit and receive a variety of signals from one another through bus wirings BE.
For the display apparatus DSP illustrated in
For the sensor SNC, the sound output portion SOP, the sound input portion SIP, the antenna ANT, and the controller RMC illustrated in
The control portion CP illustrated in
The CPU included in the control portion CP may include a circuit for temporarily backing up data (hereinafter, referred to as a backup circuit). The backup circuit is preferably capable of, for example, retaining the data even after supply of power supply voltage is stopped. For example, in the case where the display apparatus DSP displays a still image, the CPU can cease to work until an image different from the currently displayed still image is displayed. Accordingly, the data under processing by the CPU is temporarily saved in the backup circuit and then supply of power supply voltage to the CPU is stopped to stop the CPU, whereby dynamic power consumption by the CPU can be reduced. In this specification and the like, a CPU including a backup circuit is referred to as an NoffCPU (registered trademark).
The conversion portion HKB has a function of obtaining notification information of the sound SND obtained by the sound input portion SIP, captured image obtained by the sensor SNC, or the information terminal SMP received by the antenna ANT and converting the notification information into text information. For example, in the usage example of the head-mounted display HMD illustrated in
The conversion portion HKB illustrated in
In the case where the conversion unit HKB can perform arithmetic operation of the calculation model of an artificial neural network, for example, the sound SND can be recognized in the usage example of the head-mounted display HMD illustrated in
Examples of the calculation model of the artificial neural network that can be used as the sound recognition include a recurrent neural network (RNN), an LSTM (Long Short-Time Memory), a Transformer, and a BERT (Bidirectional Encoder Representations from Transformers). Moreover, for example, a dynamic time warping method or a hidden Markov model may be used.
In the case where an arithmetic operation of the calculation model of the artificial neural network can be performed with the conversion portion HKB, for example, a person or an object around the user UR can be recognized in the usage example of the head-mounted display HMD illustrated in
For the artificial neural network used for image analysis, deep learning is particularly preferably used. As deep learning, for example, a convolutional neural network (CNN), a recurrent neural network, an autoencoder (AE), a variational autoencoder (VAE), a generative adversarial network (GAN), or the like is preferably used. Examples of calculation models other than the artificial neural network used for image analysis include Random Forest, Support Vector Machine, and Gradient Boosting.
The image generation portion PGP has a function of generating image data containing a character string LA corresponding to text information, using the text information converted by the conversion portion HKB. The image data is transmitted to the circuit GP2 of the display apparatus DSP, for example, so that the character string LA can be displayed on the black region BA of the display portion DIS of the display apparatus DSP.
The memory unit MU illustrated in
Examples of an operation method of an electronic device of one embodiment of the present invention will be described.
Step SU1 includes a step of obtaining external information with the head-mounted display HMD. Note that the external information here can be the sound SND in
Step SU2 includes a step in which the conversion portion HKB generates text information on the basis of the external information obtained in Step SU1.
As generation of the text information, a calculation model of the artificial neural network described above can be used, for example. The conversion portion HKB may select a calculation model from a plurality of calculation models for performing arithmetic operation depending on the kind of external information obtained by the head-mounted display HMD.
Step SU3 includes in which the image generation portion PGP generates image data containing the character string LA using text information generated in Step SU2.
Step SU4 includes a step in which the image generation portion PGP transmits the image data generated in Step SU3 from the image generation portion PGP to the circuit GP2 of the display apparatus DSP.
Step SU5 includes, for example, a step of performing Step ST4 and Step ST5 in the flowchart illustrated in
Thus, the head-mounted display HMD can display the character string LA on the black region BA of the display portion DIS so that external information around the user UR can be given to the user UR.
The head-mounted display HMD of one embodiment of the present invention may include the sound input portion SIP and the sensor SNC. Furthermore, the head-mounted display HMD may display an image captured by the sensor SNC on the image region MA of the display portion DIS. Note that the above-described head-mounted display HMD can have the structure of the block diagram illustrated in
The image captured by the sensor SNC may be displayed on the display portion DIS of the display apparatus DSP of the head-mounted display HMD.
Like the head-mounted display HMD illustrated in
Furthermore, as illustrated in
With the electronic device of one embodiment of the present invention, the surrounding sound can be displayed on the display portion DIS as a character string. Accordingly, the surrounding sound can be caught visually, which will lead to the support for those who are deaf (hard of hearing).
Examples of an operation method of an electronic device of one embodiment of the present invention will be described.
Step SV1 includes a step of obtaining external information with the head-mounted display HMD. Note that the external information here can be the voice uttered from another person OTH in
Step SV2 includes a step in which the conversion portion HKB generates text information on the basis of the external information obtained in Step SV1.
In this step, for example, the conversion portion HKB generates text information on the basis of the voice uttered from another person OTH by sound recognition. Note that a calculation model of the artificial neural network described above can be used for the generation of the text information, for example.
Step SV3 includes a step of capturing an image of the surroundings of the user UR with the sensor SNC of the head-mounted display HMD. Accordingly, the head-mounted display HMD can obtain captured image data of the surroundings of the user UR.
In Step SV3, the conversion portion HKB may identify a person or an object around the user UR from the captured image data by image analysis.
Note that Step SV1 and Step SV2 may be performed earlier than Step SV3 or at the same time as Step SV3.
Step SV4 includes a step in which the image generation portion PGP generates image data displayed on the display portion DIS of the display apparatus DSP by using the text information generated in Step SV2 and the captured image data in Step SV3. Specifically, for example, the step SV4 includes a step in which the image generation portion PGP generates image data containing the character string LA to be displayed on the black region BA of the display portion DIS from the text information generated in Step SV2, and a step in which the image generation portion PGP generates image data to be displayed on the image region MA of the display portion DIS from the captured image data generated in Step SV3.
Step SV5 includes a step in which the image generation portion PGP transmits image data generated in Step SV4 to the image processing unit GPS of the display apparatus DSP from the image generation portion PGP. Specifically, for example, Step SV5 includes a step in which the image generation portion PGP transmits the image data on the basis of the captured image data generated in Step SV4 to the circuit GP1, and a step in which the image generation portion PGP transmits the image data containing the character string LA generated in Step SV4 to the circuit GP2.
The step SV6 includes, for example, a step of performing Step ST4 and Step ST5 in the flowchart illustrated in
Through the above operation, the display apparatus DSP can display the captured image on the image region MA and display the character string LA on the black region BA as illustrated in
Next, an example of a method for operating the head-mounted display HMD illustrated in
The operations in Step SW1 to Step SW3 are similar to those in Step SV1 to Step SV3 described above. Therefore, for the operations of Step SW1 to Step SW3, the description of Step SV1 to Step SV3 is referred to.
Step SW4 includes a step in which the image generation portion PGP generates image data to be displayed on the display portion DIS of the display apparatus DSP by using the text information generated in Step SW2 and the image data captured in Step SW3. Specifically, for example, Step SW4 includes a step in which the image generation portion PGP generates the character string LA from the text information generated in Step SV2 and a step in which the image generation portion PGP generates image data by synthesizing the character string LA with the captured image data generated in Step SV3. Note that in Step SW3, the person that has uttered voice is identified by performing image analysis by the conversion portion HKB, and the position of the character string LA can be optimized in some cases.
Step SW5 includes a step in which the image generation portion PGP transmits the image data generated in Step SW4 to the image processing unit GPS of the display apparatus DSP from the image generation portion PGP. Specifically, for example, Step SW5 includes a step in which the image generation portion PGP transmits, to the circuit GP1, image data obtained by synthesizing the captured image data generated in Step SV4 with the character string LA.
Step SW6 includes a step in which the circuit GP1 generates an image signal for displaying an image on the image region MA.
Step SW7 includes a step of transmitting the image signal generated by the circuit GP1 in Step SW6 to the display region ARA of the image region MA in the display portion DIS.
By the above operation, the display apparatus DSP can display the captured image and the character string LA on the image region MA as illustrated in
This embodiment has described a goggles-type head-mounted display; however, the electronic device of one embodiment of the present invention may be a glasses-type head-mounted display.
As described above, when the display apparatus DSP described in Embodiment 1 is used in the head-mounted display HMD, the user UR can recognize a voice, a person, or an object in the surroundings of the user UR as text information while the user UR is wearing and operating the head-mounted display HMD. In addition, notification information transmitted to an electronic device different from the head-mounted display HMD can be displayed on the display apparatus DSP of the head-mounted display HMD.
Note that this embodiment can be combined with any of the other embodiments in this specification as appropriate.
In this embodiment, a display apparatus that can be provided in an electronic device of one embodiment of the present invention will be described. Note that the display apparatus described in this embodiment can be used in the display portion DIS described in the above embodiment.
Specifically, for example, the circuit layer SICL, the wiring layer LINL, and the pixel layer PXAL illustrated in the display apparatus DSP in
As the substrate 310, a semiconductor substrate (e.g., a single crystal substrate containing silicon or germanium as a material) can be used, for example. Besides the semiconductor substrate, for example, an SOI (Silicon On Insulator) substrate, a glass substrate, a quartz substrate, a plastic substrate, a sapphire glass substrate, a metal substrate, a stainless steel substrate, a substrate including stainless steel foil, a tungsten substrate, a substrate including tungsten foil, a flexible substrate, an attachment film, or paper or a base material film containing a fibrous material can be used as the substrate 310. Examples of the glass substrate include barium borosilicate glass, aluminoborosilicate glass, and soda lime glass. Examples of the flexible substrate, the attachment film, the base material film, and the like, include plastics typified by polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyether sulfone (PES), and polytetrafluoroethylene (PTFE). Another example is a synthetic resin such as an acrylic resin. Other examples include polypropylene, polyester, polyvinyl fluoride, and polyvinyl chloride. Other examples include polyamide, polyimide, aramid, an epoxy resin, an inorganic vapor deposition film, and paper. Note that in the case where the fabrication process of the display apparatus 1000 includes heat treatment, a highly heat-resistant material is preferably selected for the substrate 310.
In the description of this embodiment, the substrate 310 is a semiconductor substrate, specifically, a single crystal substrate containing silicon.
The transistor 300 is provided on the substrate 310 and includes an element isolation layer 312, a conductor 316, an insulator 315, an insulator 317, a semiconductor region 313 that is part of the substrate 310, and a low-resistance region 314a and a low-resistance region 314b that function as a source region and a drain region. Thus, the transistor 300 is a Si transistor. Although
The transistor 300 can be, for example, a Fin type in which the top surface of the semiconductor region 313 and the side surface thereof in the channel width direction are covered with the conductor 316 with the insulator 315 functioning as a gate insulating film therebetween. The effective channel width can be increased in the Fin-type transistor 300, so that the on-state characteristics of the transistor 300 can be improved. In addition, contribution of the electric field of the gate electrode can be increased, so that the off-state characteristics of the transistor 300 can be improved.
Note that the transistor 300 may be either a p-channel transistor or an n-channel transistor. Alternatively, a plurality of the transistors 300 may be provided and both the p-channel transistor and the n-channel transistor may be used.
A region of the semiconductor region 313 where a channel is formed, a region in the vicinity thereof, and the low-resistance region 314a and the low-resistance region 314b that function as the source region and the drain region preferably contain a silicon-based semiconductor, specifically, preferably contain single crystal silicon. Alternatively, the regions may each be formed using a material containing germanium (Ge), silicon germanium (SiGe), gallium arsenide (GaAs), or aluminum gallium arsenide (GaAlAs) or gallium nitride (GaN), for example. A structure using silicon whose effective mass is controlled by applying stress to the crystal lattice and changing the lattice spacing may be employed. Alternatively, the transistor 300 may be a HEMT (High Electron Mobility Transistor) using gallium arsenide and aluminum gallium arsenide.
For the conductor 316 functioning as a gate electrode, a semiconductor material such as silicon containing an element that imparts n-type conductivity, such as arsenic or phosphorus or an element that imparts p-type conductivity, such as boron or aluminum, can be used. Alternatively, for the conductor 316, a conductive material such as a metal material, an alloy material, or a metal oxide material can be used, for example.
Note that since the work function of a conductor depends on the material of the conductor, the threshold voltage of the transistor can be adjusted by selecting the material of the conductor. Specifically, it is preferable to use one or both of titanium nitride and tantalum nitride as the material of the conductor. Moreover, in order to ensure both conductivity and embeddability, it is preferable to use stacked layers of metal materials of one or both of tungsten and aluminum for the conductor, and it is particularly preferable to use tungsten in terms of heat resistance.
The element isolation layer 312 is provided to separate a plurality of transistors formed on the substrate 310 from each other. The element isolation layer can be formed by, for example, a LOCOS (Local Oxidation of Silicon) method, an ST1 (Shallow Trench Isolation) method, or a mesa isolation method.
Note that the transistor 300 illustrated in
Over the transistor 300 illustrated in
For the insulator 320, the insulator 322, the insulator 324, and the insulator 326, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, aluminum nitride oxide, or aluminum nitride can be used, for example.
The insulator 322 may have a function of a planarization film for eliminating a level difference caused by the transistor 300 or the like covered with the insulator 320 and the insulator 322. For example, the top surface of the insulator 322 may be planarized by planarization treatment using a chemical mechanical polishing (CMP) method to improve planarity.
For the insulator 324, it is preferable to use a barrier insulating film preventing diffusion of impurities such as water and hydrogen from the substrate 310, the transistor 300, or the like to a region above the insulator 324 (e.g., the region where the transistor 200, the light-emitting device 150a, the light-emitting device 150b, and the like are provided). Accordingly, for the insulator 324, it is preferable to use an insulating material that has a function of suppressing diffusion of impurities such as a hydrogen atom, a hydrogen molecule, and a water molecule (through which the above impurities are less likely to pass). Furthermore, depending on the situation, for the insulator 324, it is preferable to use an insulating material that has a function of reducing diffusion of impurities such as a nitrogen atom, a nitrogen molecule, a nitrogen oxide molecule (e.g., N2O, NO, and NO2), and a copper atom (through which oxygen less likely to pass). In addition, it is preferable that the insulator 324 have a function of reducing diffusion of oxygen (e.g., one or both of an oxygen atom and an oxygen molecule).
For the film having a barrier property against hydrogen, silicon nitride deposited by a CVD (Chemical Vapor Deposition) method can be used, for example.
The amount of released hydrogen can be analyzed by thermal desorption spectroscopy (TDS), for example. The amount of hydrogen released from the insulator 324 that is converted into hydrogen atoms per area of the insulator 324 is less than or equal to 10×1015 atoms/cm2, preferably less than or equal to 5×1015 atoms/cm2 in TDS analysis in a film-surface temperature range of 50° C. to 500° C., for example.
Note that the permittivity of the insulator 326 is preferably lower than that of the insulator 324. For example, the dielectric constant of the insulator 326 is preferably lower than 4, further preferably lower than 3. The dielectric constant of the insulator 326 is, for example, preferably 0.7 times or less, further preferably 0.6 times or less the dielectric constant of the insulator 324. When a material with a low permittivity is used for an interlayer film, the parasitic capacitance generated between wirings can be reduced.
In addition, the conductor 328 and the conductor 330 that are connected to the light-emitting devices and the like provided above the insulator 326 are embedded in the insulator 320, the insulator 322, the insulator 324, and the insulator 326. Note that the conductor 328 and the conductor 330 each function as a plug or a wiring. A plurality of conductors functioning as plugs or wirings are collectively denoted by the same reference numeral in some cases. Moreover, in this specification and the like, a wiring and a plug connected to the wiring may be a single component. That is, part of a conductor functions as a wiring in some cases and part of a conductor functions as a plug in other cases.
As a material of each of plugs and wirings (e.g., the conductor 328 and the conductor 330), a single layer or a stacked layer of a conductive material such as a metal material, an alloy material, a metal nitride material, or a metal oxide material can be used. It is preferable to use a high-melting-point material that has both heat resistance and conductivity, such as tungsten or molybdenum, and it is preferable to use tungsten. Alternatively, a low-resistance conductive material such as aluminum or copper is preferably used. The use of a low-resistance conductive material can reduce wiring resistance.
A wiring layer may be provided over the insulator 326 and the conductor 330. For example, in
Note that like the insulator 324, for example, the insulator 350 is preferably formed using an insulator having a barrier property against hydrogen, oxygen, and water. Like the insulator 326, the insulator 352 and the insulator 354 are preferably formed using an insulator having a relatively low dielectric constant to reduce parasitic capacitance generated between wirings. The insulator 352 and the insulator 354 each have functions of an interlayer insulating film and a planarization film. Furthermore, the conductor 356 preferably includes a conductor having a barrier property against hydrogen, oxygen, and water.
For the conductor having a barrier property against hydrogen, tantalum nitride is preferably used, for example. The use of a stack including tantalum nitride and tungsten that has high conductivity can suppress diffusion of hydrogen from the transistor 300 while the conductivity of a wiring is kept. In that case, a tantalum nitride layer having a barrier property against hydrogen is preferably in contact with the insulator 350 having a barrier property against hydrogen.
An insulator 360, the insulator 362, and the insulator 364 are stacked in this order over the insulator 354 and the conductor 356.
Like the insulator 324 or the like, the insulator 360 is preferably formed using an insulator having a barrier property against impurities such as water and hydrogen. Thus, the insulator 360 can be formed using any of the materials that can be used for the insulator 324, for example.
The insulator 362 and the insulator 364 each have functions of an interlayer insulating film and a planarization film. Like the insulator 324, the insulator 362 and the insulator 364 are preferably formed using an insulator having a barrier property against impurities such as water and hydrogen. Thus, one or both of the insulator 362 and the insulator 364 can be formed using any of the materials that can be used for the insulator 324.
An opening portion is provided in regions of the insulator 360, the insulator 362, and the insulator 364 that overlap with part of the conductor 356, and the conductor 366 is provided to fill the opening portion. The conductor 366 is also formed over the insulator 362. The conductor 366 has a function of a plug or a wiring connected to the transistor 300, for example. Note that the conductor 366 can be provided using a material similar to those for the conductor 328 and the conductor 330.
An insulator 370 and an insulator 372 are stacked in this order over the insulator 364 and the conductor 366.
Like the insulator 324 or the like, the insulator 370 is preferably formed using an insulator having a barrier property against impurities such as water and hydrogen. Thus, the insulator 370 can be formed using any of the materials that can be used for the insulator 324 or the like, for example.
The insulator 372 has functions of an interlayer insulating film and a planarization film. Like the insulator 324, the insulator 372 is preferably formed using an insulator having a barrier property against impurities such as water and hydrogen. Thus, the insulator 372 can be formed using any of the materials that can be used for the insulator 324.
An opening portion is formed in regions of the insulator 370 and the insulator 372 that overlap with part of the conductor 366, and a conductor 376 is provided to fill the opening portion. The conductor 376 is also formed over the insulator 372. After that, the conductor 376 is patterned into a form of a wiring, a terminal, or a pad by etching treatment or the like.
For example, copper, aluminum, tin, zinc, tungsten, silver, platinum, or gold can be used for the conductor 376. The material used for the conductor 376 preferably contains the same component as the material used for a later-described conductor 216 included in the pixel layer PXAL.
Then, an insulator 380 is deposited to cover the insulator 372 and the conductor 376 and is subsequently subjected to planarization treatment by, for example, a chemical mechanical polishing (CMP) method until the conductor 376 is exposed. In this manner, the conductor 376 serving as a wiring, a terminal, or a pad can be formed over the substrate 310.
Like the insulator 324, the insulator 380 is preferably formed using a film having a barrier property that can prevent diffusion of impurities such as water and hydrogen, for example. That is, the insulator 380 is preferably formed using any of the materials that can be used for the insulator 324. Like the insulator 326, the insulator 380 may be formed using an insulator having a relatively low dielectric constant to reduce parasitic capacitance generated between wirings, for example. That is, the insulator 380 may be formed using any of the materials that can be used for the insulator 326.
The pixel layer PXAL is provided with, for example, a substrate 210, the transistor 200, the light-emitting device 150 (the light-emitting device 150a and the light-emitting device 150b in
An insulator 202 in
The substrate 210 is provided above the insulator 202. In other words, the insulator 202 is formed on the bottom surface of the substrate 210. The substrate 210 is preferably a substrate that can be used as the substrate 310, for example. Note that in the description of the display apparatus 1000 in
On the substrate 210, the transistor 200 is formed, for example. Being formed on the substrate 210 that is a semiconductor substrate containing silicon as a material, the transistor 200 functions as a Si transistor. Note that refer to the description of the transistor 300 for the structure of the transistor 200.
Above the transistor 200, the insulator 220 and the insulator 222 are provided. Like the insulator 320, the insulator 220 has functions of an interlayer insulating film and a planarization film, for example. Like the insulator 322, the insulator 222 has functions of an interlayer insulating film and a planarization film, for example.
A plurality of opening portions are provided in the insulator 220 and the insulator 222. The plurality of opening portions are formed in regions overlapping with a source and a drain of the transistor 200, a region overlapping with the conductor 376, and the like. The conductor 228 is formed in each of the opening portions formed in the regions overlapping with the source and the drain of the transistor 200, among the plurality of opening portions. An insulator 214 is formed on the side surface of the opening portion formed in the region overlapping with the conductor 376, among the other opening portions, and the conductor 216 is formed in the remaining space of the opening portion. The conductor 216 is sometimes particularly referred to as a TSV (Through Silicon Via).
For the conductor 216 or the conductor 228, any of the materials that can be used for the conductor 328 can be used, for example. In particular, the conductor 216 is preferably formed using the same material as the conductor 376.
The insulator 214 has a function of insulating the conductor 216 from the substrate 210, for example. Note that the insulator 214 is preferably formed using, for example, any of the materials that can be used for the insulator 320 or the insulator 324.
The insulator 380 and the conductor 376 that are formed over the substrate 310 are bonded to the insulator 202 and the conductor 216 that are formed on the substrate 210 by a bonding step, for example.
Before the bonding step, for example, planarization treatment is performed to make the surfaces of the insulator 380 and the conductor 376 level with each other on the substrate 310 side. In a similar manner, planarization treatment is performed to make the surfaces of the insulator 202 and the conductor 216 level with each other on the substrate 210 side.
In the case where bonding of the insulator 380 and the insulator 202, i.e., bonding of insulating layers, is performed in the bonding step, a hydrophilic bonding method can be employed in which, after high planarity is obtained by polishing, the surfaces subjected to hydrophilicity treatment with oxygen plasma are brought into contact to be bonded to each other temporarily, and then dehydrated by heat treatment to perform final bonding, for example. The hydrophilic bonding method can also cause bonding at an atomic level; thus, mechanically excellent bonding can be obtained.
When bonding of the conductor 376 and the conductor 216, i.e., bonding of the conductors, is performed, a surface activated bonding method can be employed in which an oxide film, a layer adsorbing impurities, and the like on the surface are removed by sputtering treatment or the like and the cleaned and activated surfaces are brought into contact to be bonded to each other. Alternatively, a diffusion bonding method in which the surfaces are bonded to each other by using temperature and pressure together can be employed, for example. Both methods cause bonding at an atomic level; thus, not only electrically but also mechanically excellent bonding can be obtained.
Through the above-described bonding step, the conductor 376 on the substrate 310 side can be electrically connected to the conductor 216 on the substrate 210 side. In addition, mechanically strong connection can be established between the insulator 380 on the substrate 310 side and the insulator 202 on the substrate 210 side.
In the case where the substrate 310 and the substrate 210 are bonded to each other, the insulating layers and the metal layers coexist on their bonding surfaces; thus, the surface activated bonding method and the hydrophilic bonding method are performed in combination, for example. For example, it is possible to employ a method in which the surfaces are made clean after polishing, the surfaces of the metal layers are subjected to antioxidant treatment and hydrophilicity treatment, and then bonding is performed. Furthermore, hydrophilicity treatment may be performed on the surfaces of the metal layers being hardly oxidizable metal such as gold.
Note that the substrate 310 and the substrate 210 may be bonded to each other by a bonding method other than the above-described methods. For example, as the bonding method of the substrate 310 and the substrate 210, flip-chip bonding may be employed. In the case of employing flip-chip bonding, a connection terminal such as a bump may be provided above the conductor 376 on the substrate 310 side or below the conductor 216 on the substrate 210 side. Flip-chip bonding can be performed by, for example, injecting a resin containing anisotropic conductive particles between the insulator 380 and the insulator 202 and between the conductor 376 and the conductor 216, or by using a Sn—Ag solder. Alternatively, ultrasonic wave bonding can be employed in the case where the bump and a conductor connected to the bump are each gold. For example, to reduce physical stress such as an impact or thermal stress, the above-described flip-chip bonding may be combined with injection of an underfill agent between the insulator 380 and the insulator 202 and between the conductor 376 and the conductor 216. Furthermore, a die bonding film may be used in bonding of the substrate 310 and the substrate 210, for example.
An insulator 224 and the insulator 226 are stacked in this order over the insulator 222, the insulator 214, the conductor 216, and the conductor 228.
Like the insulator 324, the insulator 224 is preferably a barrier insulating film that can prevent diffusion of impurities such as water and hydrogen to a region above the insulator 224. Thus, the insulator 224 is preferably formed using any of the materials that can be used for the insulator 324, for example.
Like the insulator 326, the insulator 226 is preferably an interlayer film with a low permittivity. Thus, the insulator 226 is preferably formed using any of the materials that can be used for the insulator 326, for example.
In the insulator 224 and the insulator 226, the conductor 230 electrically connected to the transistor 200, the light-emitting device 150, and the like is embedded. Note that the conductor 230 or the like has a function of a plug or a wiring. Note that the conductor 230 can be formed using any of the materials that can be used for the conductor 328 and the conductor 330 or the like, for example.
Over the insulator 224 and the insulator 226, the insulator 250, the insulator 111a, and the insulator 111b are stacked in this order.
Like the insulator 324 or the like, the insulator 250 is preferably formed using an insulator having a barrier property against impurities such as water and hydrogen. Thus, the insulator 250 can be formed using any of the materials that can be used for the insulator 324 or the like, for example.
As each of the insulator 111a and the insulator 111b, a variety of inorganic insulating films such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, and a nitride oxide insulating film can be suitably used. As the insulator 111a, an oxide insulating film or an oxynitride insulating film, such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film, is preferably used. As the insulator 111b, a nitride insulating film or a nitride oxide insulating film, such as a silicon nitride film or a silicon nitride oxide film, is preferably used. More specifically, it is preferable that a silicon oxide film be used as the insulator 111a and a silicon nitride film be used as the insulator 111b. The insulator 111b preferably functions as an etching protective film. Alternatively, a nitride insulating film or a nitride oxide insulating film may be used as the insulator 111a, and an oxide insulating film or an oxynitride insulating film may be used as the insulator 111b. Although this embodiment describes an example in which a depressed portion is provided in the insulator 111b, a depressed portion is not necessarily provided in the insulator 111b.
An opening portion is formed in regions of the insulator 250, the insulator 111a, and the insulator 111b that overlap with part of the conductor 230, and the conductor 121 is provided to fill the opening portion. Note that in this specification and the like, the conductor 121a and the conductor 121b illustrated in
A pixel electrode described in this embodiment contains a material that reflects visible light, and a counter electrode contains a material that transmits visible light, for example. The display apparatus 1000 has a top-emission structure. Light from the light-emitting device is emitted toward the substrate 102. For the substrate 102, a material having a high visible-light-transmitting property is preferably used.
The light-emitting device 150a and the light-emitting device 150b are provided above the conductor 121.
Here, the light-emitting device 150a and the light-emitting device 150b will be described.
The light-emitting device described in this embodiment refers to a self-luminous light-emitting device such as an organic EL element (also referred to as an OLED (Organic Light Emitting Diode)), for example. The light-emitting device electrically connected to the pixel circuit can be a self-luminous light-emitting device such as an LED (Light Emitting Diode), a micro LED, a QLED (Quantum-dot Light Emitting Diode), or a semiconductor laser.
A conductor 122a and a conductor 122b can be formed in the following manner, for example: a conductive film is formed over the insulator 111b, the conductor 121a, the conductor 121b, and the like and the conductive film is subjected to a patterning step and an etching step.
The conductor 122a and the conductor 122b function respectively as anodes of the light-emitting device 150a and the light-emitting device 150b included in the display apparatus 1000, for example.
Indium tin oxide (sometimes referred to as ITO) or the like can be used for the conductor 122a and the conductor 122b, for example.
Each of the conductor 122a and the conductor 122b may have a stacked-layer structure of two or more layers instead of a single-layer structure. For example, a conductor having a high visible-light reflectance can be used for the first-layer conductor and a conductor having a high light-transmitting property can be used for the uppermost-layer conductor. Examples of a conductor having a high visible-light reflectance include silver, aluminum, and an alloy film of silver (Ag), palladium (Pd), and copper (Cu) (Ag—Pd—Cu (APC) film). Examples of a conductor having a high light-transmitting property include indium tin oxide described above. The conductor 122a and the conductor 122b can each be, for example, a stacked-layer film in which a pair of titanium films sandwich aluminum (a film in which Ti, Al, and Ti are stacked in this order), a stacked-layer film in which a pair of indium tin oxide films sandwich silver (a film in which ITO, Ag, and ITO are stacked in this order), or the like.
An EL layer 141a is provided over the conductor 122a. An EL layer 141b is provided over the conductor 122b.
The EL layer 141a and the EL layer 141b preferably include light-emitting layers emitting light of different colors. For example, the EL layer 141a can include a light-emitting layer emitting light of any one of red (R), green (G), and blue (B), and the EL layer 141b can include a light-emitting layer emitting light of one of the other two colors. Although not illustrated in
Note that the combination of colors of light emitted from the light-emitting layers included in the EL layer 141a and the EL layer 141b is not limited to the above, and a color such as cyan, magenta, or yellow may also be used, for example. The number of colors of light emitted from the light-emitting devices 150 included in the display apparatus 1000, which is three in the above example, may be two, three, or four or more.
The EL layer 141a and the EL layer 141b may each include one or more of an electron-injection layer, an electron-transport layer, a hole-injection layer, and a hole-transport layer in addition to the layer containing a light-emitting organic compound (the light-emitting layer).
The EL layer 141a and the EL layer 141b can be formed, for example, by an evaporation method (a vacuum evaporation method or the like), a coating method (e.g., a dip coating method, a die coating method, a bar coating method, a spin coating method, or a spray coating method), or a printing method (e.g., an inkjet method, a screen printing (stencil) method, an offset printing (planography) method, a flexography (relief printing) method, a gravure printing method, or a micro-contact printing method).
In the case where a deposition method such as the coating method or the printing method is employed, a high-molecular compound (e.g., an oligomer, a dendrimer, or a polymer), a middle-molecular compound (a compound between a low-molecular compound and a high-molecular compound with a molecular weight of 400 to 4000), or an inorganic compound (a quantum dot material or the like) can be used. As the quantum dot material, a colloidal quantum dot material, an alloyed quantum dot material, a core-shell quantum dot material, or a core quantum dot material can be used.
Like the light-emitting device 150 illustrated in
A layer 4420 can include, for example, a layer containing a substance with a high electron-injection property (an electron-injection layer) and a layer containing a substance with a high electron-transport property (an electron-transport layer). The light-emitting layer 4411 contains a light-emitting compound, for example. The layer 4430 can include, for example, a layer containing a substance with a high hole-injection property (a hole-injection layer) and a layer containing a substance with a high hole-transport property (a hole-transport layer).
The structure including the layer 4420, the light-emitting layer 4411, and the layer 4430, which is provided between a pair of electrodes (the conductor 121 and the conductor 122 described later), can function as a single light-emitting unit, and the structure in
Note that the structure in which a plurality of light-emitting layers (the light-emitting layer 4411, a light-emitting layer 4412, and a light-emitting layer 4413) are provided between the layer 4420 and the layer 4430 as illustrated in
A stack including a plurality of layers such as the layer 4420, the light-emitting layer 4411, and the layer 4430 is sometimes referred to as a light-emitting unit. A plurality of light-emitting units can be connected in series with an intermediate layer (a charge-generation layer) therebetween. Specifically, a light-emitting unit 4400a and a light-emitting unit 4400b, which are a plurality of light-emitting units, can be connected in series with an intermediate layer (a charge-generation layer) 4440 therebetween as illustrated in
In displaying white, the aforementioned SBS structure consumes lower power than the aforementioned single structure and tandem structure. To reduce power consumption, the SBS structure is thus suitably used. Meanwhile, the single structure and the tandem structure are suitable in terms of lower manufacturing cost or higher manufacturing yield because the manufacturing processes of the single structure and the tandem structure are simpler than that of the SBS structure.
The emission color of the light-emitting device 150 can be red, green, blue, cyan, magenta, yellow; or white depending on the material that constitutes the EL layer 141. Furthermore, the color purity can be further increased when the light-emitting device 150 has a microcavity structure.
The light-emitting device that emits white light preferably contains two or more kinds of light-emitting substances in the light-emitting layer. For example, in the case where white light is obtained with use of two light-emitting layers, the emission colors of the two light-emitting layers are complementary, so that the light-emitting device can emit white light as a whole. When white light emission is obtained using three or more light-emitting layers, a light-emitting device is preferably configured to emit white light as a whole by combining emission colors of the three or more light-emitting layers.
The light-emitting layer preferably contains two or more selected from light-emitting substances that emit light of R (red), G (green), B (blue), Y (yellow), and O (orange). Alternatively, the light-emitting layer preferably contains two or more light-emitting substances that emit light containing two or more selected from spectral components of R, G, and B.
As illustrated in
As an example of the formation method of the EL layer 141a and the EL layer 141b, a method with photolithography can be given. For example, the EL layer 141a and the EL layer 141b can be formed in the following manner: an EL film to be the EL layer 141a and the EL layer 141b is deposited over the conductor 122 and then subjected to patterning by a photolithography method. Accordingly, a gap can be provided between two EL layers of adjacent light-emitting devices.
The insulator 112 can be an insulating layer containing an inorganic material. As the insulator 112, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used, for example. The insulator 112 may have a single-layer structure or a stacked-layer structure. Examples of the oxide insulating film include a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of the nitride insulating film include a silicon nitride film and an aluminum nitride film. Examples of the oxynitride insulating film include a silicon oxynitride film and an aluminum oxynitride film. Examples of the nitride oxide insulating film include a silicon nitride oxide film and an aluminum nitride oxide film. An aluminum oxide film is particularly preferable because it has high selectivity with respect to the EL layer in etching and has a function of protecting the EL layer during formation of the insulator 162 described later. In particular, when an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by an ALD (Atomic Layer Deposition) method is used as the insulator 112, the insulator 112 having a small number of pinholes and an excellent function of protecting the EL layer can be formed.
Note that in this specification and the like, oxynitride refers to a material that contains more oxygen than nitrogen in its composition, and nitride oxide refers to a material that contains more nitrogen than oxygen in its composition. For example, in the case where silicon oxynitride is described, it refers to a material that contains more oxygen than nitrogen in its composition. In the case where silicon nitride oxide is described, it refers to a material that contains more nitrogen than oxygen in its composition.
The insulator 112 can be formed by a sputtering method, a CVD method, a PLD (Pulsed Laser Deposition) method, or an ALD method. The insulator 112 is preferably formed by an ALD method achieving good coverage.
The insulator 162 provided over the insulator 112 has a planarization function for the depressed portion of the insulator 112, which is formed between the adjacent light-emitting devices. In other words, the insulator 162 has an effect of improving the planarity of the formation surface of the conductor 123 to be described later. As the insulator 162, an insulating layer containing an organic material can be suitably used. For example, as the insulator 162, an acrylic resin, a polyimide resin, an epoxy resin, an imide resin, a polyamide resin, a polyimide-amide resin, a silicone resin, a siloxane resin, a benzocyclobutene-based resin, a phenol resin, or precursors of these resins can be used. For the insulator 162, an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or an alcohol-soluble polyamide resin may be used. Moreover, for the insulator 162, a photosensitive resin can be used. A photoresist may be used as the photosensitive resin, for example. Note that as the photosensitive resin, a positive photosensitive material or a negative photosensitive material can be used.
A difference between the top surface level of the insulator 162 and the top surface level of the EL layer 141a or the EL layer 141b is preferably less than or equal to 0.5 times, further preferably less than or equal to 0.3 times the thickness of the insulator 162, for example. The insulator 162 may be provided, for example, such that the top surface of the EL layer 141a or the EL layer 141b is at a higher level than the top surface of the insulator 162. Alternatively, the insulator 162 may be provided, for example, such that the top surface of the insulator 162 is at a higher level than the top surface of the light-emitting layer included in the EL layer 141a or the EL layer 141b.
The conductor 123 is provided over the EL layer 141a, the EL layer 141b, the insulator 112, and the insulator 162. The insulator 113 is provided over the light-emitting device 150a and the light-emitting device 150b.
The conductor 123 functions as, for example, a common electrode for the light-emitting device 150a and the light-emitting device 150b. The conductor 122 preferably contains a conductive material having a light-transmitting property so that light emitted from the light-emitting device 150 can be extracted to above the display apparatus 1000.
The conductor 123 is preferably a light-transmitting and light-reflective material having high conductivity (sometimes referred to as a transflective electrode). For example, an alloy of silver and magnesium, or indium tin oxide can be used as the conductor 122.
The insulator 113 is referred to as a protective layer in some cases, and the insulator 113 provided above the light-emitting device 150a and the light-emitting device 150b can increase the reliability of the light-emitting devices. That is, the insulator 113 functions as a passivation film that protects the light-emitting device 150a and the light-emitting device 150b. Thus, the insulator 113 is preferably formed using a material that prevents entry of water or the like. Any of the materials that can be used for the insulator 111a and the insulator 111b can be used for the insulator 113, for example. Specifically, aluminum oxide, silicon nitride, or silicon nitride oxide can be used.
The resin layer 163 is provided over the insulator 113. The substrate 102 is provided over the resin layer 163.
A substrate having a light-transmitting property is preferably used as the substrate 102, for example. Using a substrate having a light-transmitting property as the substrate 102 enables extraction of light emitted from the light-emitting device 150a and the light-emitting device 150b to above the substrate 102.
Note that the structure of the display apparatus of one embodiment of the present invention is not limited to that of the display apparatus 1000 illustrated in
For example, the transistor 200 included in the pixel layer PXAL in the display apparatus 1000 in
In
For the film having a barrier property against hydrogen, silicon nitride deposited by a CVD method can be used, for example. Here, diffusion of hydrogen into a semiconductor element including an oxide semiconductor (e.g., the transistor 500) degrades the characteristics of the semiconductor element in some cases. Therefore, a film to suppress hydrogen diffusion is preferably used between the transistor 500 and the transistor 300. The film to suppress hydrogen diffusion is specifically a film from which a small amount of hydrogen is released.
A material similar to that for the insulator 320 can be used for the insulator 512, for example. When a material with a relatively low permittivity is used for these insulators, parasitic capacitance generated between wirings can be reduced. A silicon oxide film or a silicon oxynitride film can be used as the insulator 512, for example.
An insulator 514 is provided over the insulator 512, and the transistor 500 is provided over the insulator 514. An insulator 576 is formed over the insulator 512 to cover the transistor 500. An insulator 581 is formed over the insulator 576.
As the insulator 514, it is preferable to use a film having a barrier property that prevents diffusion of impurities such as hydrogen from the substrate 310, a region where the circuit element or the like below the insulator 512 is provided, or the like into a region where the transistor 500 is provided. Thus, silicon nitride deposited by a CVD method can be used for the insulator 514, for example.
The transistor 500 illustrated in
In particular, the metal oxide functioning as a semiconductor preferably has a band gap of 2 eV or more, preferably 2.5 eV or more. With the use of a metal oxide having such a wide band gap, the off-state current (sometimes referred to as leakage current) of the transistor can be reduced.
In particular, as a driving transistor included in a pixel circuit, a transistor having a sufficiently low off-state current even when the source-drain voltage is high, for example, an OS transistor, is preferably used. With the use of an OS transistor as the driving transistor, the amount of off-state current flowing through the light-emitting device when the driving transistor is in an off state can be reduced, whereby the luminance of light emitted from the light-emitting device through which an off-state current flows can be sufficiently reduced. Thus, in the case where a driving transistor having a high off-state current and a driving transistor having a low off-state current are compared, a pixel circuit including the driving transistor having a low off-state current can have lower emission luminance than a pixel circuit including the driving transistor having a high off-state current when black display is performed by the pixel circuits. That is, the use of an OS transistor can reduce black blurring when black display is performed by the pixel circuit.
The off-state current value per micrometer of channel width of an OS transistor at room temperature can be lower than or equal to 1 aA (1×10−18 A), lower than or equal to 1 zA (1×10−21 A), or lower than or equal to 1 yA (1×10−24 A). Note that the off-state current value per micrometer of channel width of a Si transistor at room temperature is higher than or equal to 1 fA (1×10−15 A) and lower than or equal to 1 pA (1×10−12 A). In other words, the off-state current of an OS transistor is lower than the off-state current of a Si transistor by approximately ten orders of magnitude.
To increase the emission luminance of the light-emitting device included in the pixel circuit, the amount of current fed through the light-emitting device needs to be increased. For this, it is necessary to increase the source-drain voltage of a driving transistor included in the pixel circuit. Since an OS transistor has a higher withstand voltage between a source and a drain than a Si transistor, a high voltage can be applied between a source and a drain of an OS transistor. Accordingly, when an OS transistor is used as the driving transistor included in the pixel circuit, a high voltage can be applied between a source and a drain of the OS transistor, so that the amount of current flowing through the light-emitting device can be increased and the emission luminance of the light-emitting device can be increased.
When transistors operate in a saturation region, a change in source-drain current relative to a change in gate-source voltage can be smaller in an OS transistor than in a Si transistor. Accordingly, when an OS transistor is used as the driving transistor included in the pixel circuit, the amount of current flowing between the source and the drain can be set minutely by a change in gate-source voltage; hence, the amount of current flowing through the light-emitting device can be controlled. Therefore, the emission luminance of the light-emitting device can be controlled minutely (the number of gray levels in the pixel circuit can be increased).
Regarding saturation characteristics of current flowing when transistors operate in a saturation region, an OS transistor can feed constant current (saturation current) more stably than a Si transistor even when the source-drain voltage gradually increases. Thus, by using an OS transistor as the driving transistor, a stable constant current can be fed through a light-emitting device that contains an organic EL material even when the current-voltage characteristics of the light-emitting device vary, for example. In other words, when an OS transistor operates in the 20) saturation region, the source-drain current hardly changes with an increase in the source-drain voltage; hence, the emission luminance of the light-emitting device can be stable.
As described above, with the use of an OS transistor as the driving transistor included in the pixel circuit, it is possible to achieve “reduction of black blurring”, “increase in emission luminance”, “increase in gray levels”, “reduction of variation in light-emitting devices”, or the like. Therefore, a display apparatus including the pixel circuit can display a clear and smooth image; as a result, any one or more of the image clearness (image sharpness) and a high contrast ratio can be observed. Note that image clearness (image sharpness) sometimes refers to one or both of the state where motion blur is reduced and the state where black blurring is reduced. When the off-state current that can flow through the driving transistor included in the pixel circuit is extremely low; black display performed by the display apparatus can be display with as little light leakage or the like as possible (completely black display).
At least one of the insulator 576 and the insulator 581 preferably functions as a barrier insulating film to suppress diffusion of impurities such as water and hydrogen from above the transistor 500 into the transistor 500. Thus, for at least one of the insulator 576 and the insulator 581, it is preferable to use an insulating material having a function of suppressing diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, nitrogen oxide molecules (e.g., N2O, NO, and NO2), and copper atoms (an insulating material through which the impurities are less likely to pass). Alternatively, it is preferable to use an insulating material having a function of suppressing diffusion of oxygen (e.g., one or both of oxygen atoms, oxygen molecules, and the like) (an insulating material through which the oxygen is less likely to pass).
One or both of the insulator 576 and the insulator 581 is preferably an insulator having a function of suppressing diffusion of oxygen and impurities such as water and hydrogen; for example, aluminum oxide, magnesium oxide, hafnium oxide, gallium oxide, indium-gallium-zinc oxide, silicon nitride, silicon nitride oxide, or the like can be used for one or both of the insulator 576 and the insulator 581.
An opening portion for forming a plug, a wiring, or the like is provided in the insulator 581, the insulator 576, and one of the source and drain electrodes of the transistor 500. A conductor 540 functioning as a plug, a wiring, or the like is formed in the opening portion.
The insulator 581 is preferably an insulator functioning as one or both of an interlayer film and a planarization film, for example.
The insulator 224 and the insulator 226 are formed above the insulator 581 and the conductor 540. Note that for the description of the insulator 224 and an insulator, a conductor, a circuit element, and the like that are positioned above the insulator 224, refer to the description of the display apparatus 1000 in
Note that
Specifically, for example, the display apparatus for the electronic device of one embodiment of the present invention may include a circuit including the transistor 200 formed over the substrate 210 and the light-emitting device 150 provided above the transistor 200, like the display apparatus 1000 illustrated in
The display apparatus for the electronic device of one embodiment of the present invention may have a structure in which transistors are formed in only one layer and the light-emitting device 150 is provided above the transistors, like the display apparatus 1000 illustrated in each of
Next, a sealing structure of the light-emitting device 150 that can be employed for the display apparatus 1000 in
In a region 123CM illustrated in
For the conductor 121CM, any of the materials that can be used for the conductor 121 can be used, for example.
In the display apparatus 1000 in
The adhesive layer 164 is preferably formed using, for example, a material reducing transmission of impurities such as moisture. Using the material for the adhesive layer 164 can increase the reliability of the display apparatus 1000.
A structure in which the insulator 113 and the substrate 102 are bonded to each other with the resin layer 163 therebetween using the adhesive layer 164 is sometimes referred to as a solid sealing structure. In the case where the resin layer 163 in the solid sealing structure has a function of bonding the insulator 113 and the substrate 102 like the adhesive layer 164, the adhesive layer 164 is not necessarily provided.
Meanwhile, a structure in which the insulator 113 and the substrate 102 are bonded to each other with an inert gas filled therebetween, instead of the resin layer 163, by using the adhesive layer 164 is sometimes referred to as a hollow sealing structure (not illustrated). Examples of an inert gas include nitrogen and argon.
In the sealing structure of the display apparatus 1000 illustrated in
A desiccant may be mixed into the adhesive layer 165. In that case, the desiccant adsorbs moisture contained in the resin layer 163, insulators, conductors, and EL layers that are provided on the inner side of the adhesive layer 164 and the adhesive layer 165, increasing the reliability of the display apparatus 1000.
Although the solid sealing structure is illustrated in the display apparatus 1000 in
Furthermore, an inert liquid may be used instead of the resin layer 163 to fill the space in each of the sealing structures of the display apparatus 1000 in
One embodiment of the present invention is not limited to the above-described structures, and the above-described structures can be changed as appropriate in accordance with circumstances. Modification examples of the display apparatus 1000 in
Note that, for example, the color of light emitted from the EL layer 141c may be different from the colors of light emitted from the EL layer 141a and the EL layer 141b. The display apparatus 1000 may have a structure in which the number of colors of light emitted from the light-emitting device 150a to the light-emitting device 150c is two, for example. Alternatively, for example, the display apparatus 1000 may have a structure in which the number of light-emitting devices 150 is increased so that the number of colors of light emitted from the light-emitting devices is four or more (not illustrated).
The display apparatus 1000 may have a structure in which an EL layer 142 is formed over the EL layer 141a to the EL layer 141c, for example, as illustrated in
In the structure of the display apparatus 1000, for example, the insulator 113 may have a stacked-layer structure of two or more layers, instead of a single layer. The insulator 113 may have a three-layer structure that includes an insulator made of an inorganic material as the first layer, an insulator made of an organic material as the second layer, and an insulator made of an inorganic material as the third layer.
In the structure of the display apparatus 1000, for example, the EL layer 141a to the EL layer 141c may each have a microcavity structure. In the microcavity structure, for example, the conductor 122 as an upper electrode (common electrode) is formed using a light-transmitting and light-reflective conductive material, the conductor 121 as a lower electrode (pixel electrode) is formed using a light-reflective conductive material, and the distance between the bottom surface of the light-emitting layer and the top surface of the lower electrode. i.e., the thickness of the layer 4430 in
For example, light that is reflected back from the lower electrode (reflected light) considerably interferes with light that directly enters the upper electrode from the light-emitting layer (incident light); therefore, the optical path length between the lower electrode and the light-emitting layer is preferably adjusted to (2n−1)λ/4 (n is a natural number of 1 or more and λ is a wavelength of emitted light to be amplified). By adjusting the optical path length, the phases of the reflected light and the incident light each having the wavelength λ can be aligned with each other, and the light emitted from the light-emitting layer can be further amplified. In the case where the reflected light and the incident light have a wavelength other than the wavelength λ, their phases are not aligned with each other, resulting in attenuation without resonation.
The EL layer included in the structure may include a plurality of light-emitting layers or a single light-emitting layer. Furthermore, for example, in combination with the aforementioned tandem light-emitting device structure, a structure may be employed in which one light-emitting device includes a plurality of EL layers with a charge-generation layer interposed therebetween and each EL layer includes one or more light-emitting layers.
With the microcavity structure, emission intensity with a specific wavelength in the front direction can be increased, whereby power consumption can be reduced. Particularly in the case of a device for XR such as VR and AR, light emitted from the light-emitting device in the front direction often enters the eyes of the user wearing the device; thus, a display apparatus of a device for XR suitably has a microcavity structure. Note that in the case of a display apparatus that displays an image with subpixels of four colors of red, yellow; green, and blue, the display apparatus can have excellent characteristics because a microcavity structure suitable for the wavelength of the corresponding color is employed in each subpixel, in addition to the effect of improving luminance owing to yellow light emission.
The display apparatus 1000 may include a coloring layer (color filter), for example.
The display apparatus 1000 illustrated in
The coloring layer 166a to the coloring layer 166c formed on the substrate 102 may be covered with a resin or the like which is referred to as an overcoat layer. Specifically, the resin layer 163, the overcoat layer, the coloring layer 166a to the coloring layer 166c, and the substrate 102 may be stacked in this order in the display apparatus 1000 (not illustrated). Note that examples of the resin used for the overcoat layer include a thermosetting material having a light-transmitting property and being based on an acrylic resin or an epoxy resin.
The display apparatus 1000 may include, for example, a black matrix (not illustrated) in addition to the coloring layers. The black matrix provided between the coloring layer 166a and the coloring layer 166b, between the coloring layer 166b and the coloring layer 166c, and between the coloring layer 166c and the coloring layer 166a can block more light emitted from the light-emitting device 150 in an oblique direction (a direction at an elevation angle with the top surface of the substrate 102 used as a horizontal plane) in the display apparatus 1000; thus, the display quality of an image displayed on the display apparatus 1000 can be more prevented from decreasing when the image is viewed from an oblique direction.
In the case where the display apparatus includes coloring layers as illustrated in
In the above-described structure of the display apparatus 1000, the conductor 121a to the conductor 121c serve as anodes and the conductor 122 serves as a cathode; however, the display apparatus 1000 may have a structure in which the conductor 121a to the conductor 121c serve as cathodes and the conductor 122 serves as an anode. That is, in the above-described fabrication process, the stacking order of the hole-injection layer, the hole-transport layer, the light-emitting layer, the electron-transport layer, and the electron-injection layer that are included in the EL layer 141a to the EL layer 141c and the EL layer 142 may be reversed.
Next, cross-sectional structures of a region including the insulator 162 and its periphery in the display apparatus 1000 will be described.
In
In
In
In
In formation of the insulator 112, for example, when the insulator 112 is formed to be level with or substantially level with the sacrificial layer, a shape such that the insulator 112 protrudes is sometimes formed as illustrated in
In
As described above, the insulator 112 and the insulator 162 can have a variety of shapes.
Here, structure examples of a pixel circuit that can be included in the pixel layer PXAL will be described.
The pixel circuit 400 illustrated as an example in
The transistor 500B includes a gate electrode electrically connected to the transistor 500A, a first electrode electrically connected to the light-emitting device 150, and a second electrode electrically connected to a wiring ANO. The wiring ANO supplies a potential for supplying current to the light-emitting device 150.
The transistor 500A includes a first terminal electrically connected to the gate electrode of the transistor 500B, a second terminal electrically connected to the wiring SL functioning as a source line, and the gate electrode having a function of controlling the conducting state or the non-conducting state on the basis of the potential of the wiring GL1 functioning as a gate line.
The transistor 500C includes a first terminal electrically connected to a wiring V0, a second terminal electrically connected to the light-emitting device 150, and the gate electrode having a function of controlling the conducting state or the non-conducting state on the basis of the potential of the wiring GL2 functioning as a gate line. The wiring V0 is a wiring for supplying a reference potential and a wiring for outputting current flowing through the pixel circuit 400 to the driver circuit 30.
The capacitor 600 includes a conductive film electrically connected to the gate electrode of the transistor 500B and a conductive film electrically connected to the second electrode of the transistor 500C.
The light-emitting device 150 includes a first electrode electrically connected to the first electrode of the transistor 500B and a second electrode electrically connected to a wiring VCOM. The wiring VCOM is a wiring for supplying a potential for supplying current to the light-emitting device 150.
Accordingly, the intensity of light emitted from the light-emitting device 150 can be controlled in accordance with an image signal supplied to the gate electrode of the transistor 500B. Furthermore, variations in the gate-source voltage of the transistor 500B can be reduced by the reference potential of the wiring V0 supplied through the transistor 500C.
A current in amount that can be used for setting pixel parameters can be output from the wiring V0. Specifically, the wiring V0 can function as a monitor line for outputting current flowing through the transistor 500B or current flowing through the light-emitting device 150 to the outside. Current output to the wiring V0 is converted into voltage by a source follower circuit or the like and output to the outside. Alternatively, for example, current output to the wiring V0 can be converted into a digital signal by an analog-digital conversion circuit and output to the AI accelerator described in the above embodiment.
Note that in the structure illustrated as an example in
Although
A pixel circuit 400A illustrated in
A gate of the transistor 500A is electrically connected to the wiring GL, one of a source and a drain of the transistor 500A is electrically connected to the wiring SL, and the other of the source and the drain of the transistor 500A is electrically connected to a gate of the transistor 500B and one electrode of the capacitor 600. One of a source and a drain of the transistor 500B is electrically connected to the wiring ANO and the other of the source and the drain of the transistor 500B is electrically connected to an anode of the light-emitting device 150. The other electrode of the capacitor 600 is electrically connected to the anode of the light-emitting device 150. A cathode of the light-emitting device 150 is electrically connected to the wiring VCOM.
A pixel circuit 400B illustrated in
A pixel circuit 400C illustrated in
A pixel circuit 400E illustrated in
A gate of the transistor 500D is electrically connected to the wiring GL3, one of a source and a drain of the transistor 500D is electrically connected to the gate of the transistor 500B, and the other of the source and the drain of the transistor 500D is electrically connected to the wiring V0. The gate of the transistor 500A is electrically connected to the wiring GL1, and the gate of the transistor 500C is electrically connected to the wiring GL2.
When the transistor 500C and the transistor 500D are brought into in conducting states at the same time, the source and the gate of the transistor 500B have the same potential, so that the transistor 500B can be brought into a non-conducting state. Thus, current flowing through the light-emitting device 150 can be blocked forcibly. Such a pixel circuit is suitable for the case of using a display method in which a display period and a non-lighting period are alternately provided.
A pixel circuit 400F illustrated in
A pixel circuit 400G illustrated in
Here, a pixel layout that can be used in a display apparatus of one embodiment of the present invention will be described. There is no particular limitation on the arrangement of subpixels, and a variety of methods can be employed. Examples of the arrangement of subpixels include stripe arrangement, S-stripe arrangement, matrix arrangement, delta arrangement, Bayer arrangement, and pentile arrangement.
Examples of a top surface shape of the subpixel include polygons such as a triangle, a quadrangle (including a rectangle and a square), and a pentagon; polygons with rounded corners; an ellipse; and a circle. Here, the top surface shape of the subpixel corresponds to the top surface shape of a light-emitting region of a light-emitting device.
The pixel 80 illustrated in
The pixel 80 illustrated in
The pixel 80 illustrated in
A pixel 70A and a pixel 70B illustrated in
The pixel 70A and the pixel 70B illustrated in
In a photolithography method, as a pattern to be processed becomes finer, the influence of light diffraction becomes more difficult to ignore; therefore, the fidelity in transferring a photomask pattern by light exposure is degraded, and it becomes difficult to process a resist mask into a desired shape. Thus, a pattern with rounded corners is likely to be formed even with a rectangular photomask pattern. Consequently, the top surface of a subpixel can have a polygonal shape with rounded corners, an elliptical shape, or a circular shape in some cases.
Furthermore, in the method for fabricating the display apparatus of one embodiment of the present invention, the EL layer is processed into an island shape with the use of a resist mask. A resist film formed over the EL layer needs to be cured at a temperature lower than the upper temperature limit of the EL layer. Therefore, the resist film is insufficiently cured in some cases depending on the upper temperature limit of the material of the EL layer and the curing temperature of the resist material. An insufficiently cured resist film may have a shape different from a desired shape by processing. As a result, the top surface of the EL layer may have a polygonal shape with rounded corners, an elliptical shape, or a circular shape. For example, when a resist mask with a square top surface is intended to be formed, a resist mask with a circular top surface may be formed, and the top surface of the EL layer may be circular.
To obtain a desired top surface shape of the EL layer, a technique of correcting a mask pattern in advance such that a transferred pattern agrees with a design pattern (OPC (Optical Proximity Correction) technique) may be used. Specifically, with the OPC technique, a pattern for correction is added to a corner portion or the like of a figure on a mask pattern.
The pixels 80 illustrated in
The pixels 80 illustrated in
The pixels 80 illustrated in
The subpixel 80d includes a light-emitting device. The light-emitting device includes, for example, a pixel electrode, an EL layer, and the conductor 121CM functioning as a common electrode. For the pixel electrode, a material similar to those for the conductor 121a, the conductor 121b, the conductor 121c, the conductor 122a, the conductor 122b, and the conductor 122c can be used. For the EL layer, a material similar to that for the EL layer 141a, the EL layer 141b, and the EL layer 141c can be used, for example.
In the pixel 80 illustrated in each of
Note that the insulators, the conductors, the semiconductors, and the like disclosed in this specification and the like can be formed by a PVD (Physical Vapor Deposition) method or a CVD method. Examples of a PVD method include a sputtering method, a resistance heating evaporation method, an electron beam evaporation method, and a PLD method. Examples of the CVD method include a plasma CVD method and a thermal CVD method. In particular, examples of a thermal CVD method include an MOCVD (Metal Organic Chemical Vapor Deposition) method and an ALD (Atomic Layer Deposition) method.
A thermal CVD method, which is a deposition method not using plasma, has an advantage that a defect due to plasma damage is not generated.
Deposition by a thermal CVD method may be performed in the following manner: a source gas and an oxidizer are supplied into a chamber at a time, the pressure in the chamber is set to an atmospheric pressure or a reduced pressure, and they are made to react with each other in the vicinity of the substrate or over the substrate to be deposited over the substrate.
Deposition by an ALD method may be performed in the following manner: pressure in a chamber is set to an atmospheric pressure or a reduced pressure, source gases for reaction are sequentially introduced into the chamber, and then the sequence of the gas introduction is repeated. For example, two or more kinds of source gases are sequentially supplied to the chamber by switching respective switching valves (also referred to as high-speed valves); in order to avoid mixing of the plurality of kinds of source gases, an inert gas (e.g., argon or nitrogen) or the like is introduced at the same time as or after introduction of a first source gas and then a second source gas is introduced. Note that in the case where the first source gas and the inert gas are introduced at a time, the inert gas serves as a carrier gas, and the inert gas may also be introduced at the same time as the introduction of the second source gas. Alternatively, the second source gas may be introduced after the first source gas is exhausted by vacuum evacuation instead of the introduction of the inert gas. The first source gas is adsorbed on the surface of the substrate to deposit a first thin layer, and then the second source gas is introduced to react with the first thin layer; as a result, a second thin layer is stacked over the first thin layer, so that a thin film is formed. The sequence of the gas introduction is controlled and repeated a plurality of times until a desired thickness is obtained, so that a thin film with excellent step coverage can be formed. The thickness of the thin film can be adjusted by the number of repetition times of the sequence of the gas introduction; therefore, an ALD method makes it possible to accurately adjust the thickness and is thus suitable for fabricating a minute FET.
A variety of films such as the metal film, the semiconductor film, and the inorganic insulating film disclosed in the above-described embodiments can be formed by a thermal CVD method such as an MOCVD method and an ALD method; for example, in the case of depositing an In—Ga—Zn—O film, trimethylindium (In(CH3)3), trimethylgallium (Ga(CH3)3), and dimethylzinc (Zn(CH3)2) are used. Without limitation to the above combination, triethylgallium (Ga(C2H5)3) can also be used instead of trimethylgallium, and diethylzinc (Zn(C2H5)2) can also be used instead of dimethylzinc.
For example, in the case where a hafnium oxide film is formed with a deposition apparatus utilizing an ALD method, two kinds of gases, ozone (O3) as an oxidizer and a source gas which is obtained by vaporizing liquid containing a solvent and a hafnium precursor compound (e.g., hafnium alkoxide or hafnium amide such as tetrakis(dimethylamide)hafnium (TDMAH, Hf[N(CH3)2]4)), are used. Examples of another material include tetrakis(ethylmethylamide)hafnium.
For example, in the case where an aluminum oxide film is formed with a deposition apparatus utilizing an ALD method, two kinds of gases, H2O as an oxidizer and a source gas which is obtained by vaporizing liquid containing a solvent and an aluminum precursor compound (e.g., trimethylaluminum (TMA, Al(CH3)3)) are used. Examples of another material include tris(dimethylamide)aluminum, triisobutylaluminum, and aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate).
For example, in the case where a silicon oxide film is formed with a deposition apparatus utilizing an ALD method, hexachlorodisilane is adsorbed on a surface on which a film is to be formed, and radicals of an oxidizing gas (e.g., O2 or dinitrogen monoxide) are supplied to react with the adsorbate.
For example, in the case where a tungsten film is deposited by a deposition apparatus utilizing an ALD method, a WF6 gas and a B2H6 gas are sequentially and repeatedly introduced to form an initial tungsten film, and then a WF6 gas and an H2 gas are sequentially and repeatedly introduced to form a tungsten film. Note that a SiH4 gas may be used instead of a B2H6 gas.
In the case where an In—Ga—Zn—O film is deposited as an oxide semiconductor film with a deposition apparatus utilizing an ALD method, for example, a precursor (generally referred to as a precursor, a metal precursor or the like in some cases) and an oxidizer (generally referred to as a reactant, a non-metal precursor, or the like in some cases) are sequentially and repeatedly introduced. Specifically, for example, an In(CH3)3 gas as a precursor and an O3 gas as an oxidizer are introduced to form an In—O layer; a Ga(CH3)3 gas as a precursor and an O3 gas as an oxidizer are introduced to form a GaO layer; and then, a Zn(CH3)2 gas as a precursor and an O3 gas as an oxidizer are introduced to form a ZnO layer. Note that the order of these layers is not limited to this example. A mixed oxide layer such as an In—Ga—O layer, an In—Zn—O layer, or a Ga—Zn—O layer may be formed with the use of these gases. Note that although an H2O gas which is obtained by bubbling water with an inert gas such as Ar may be used instead of an O3 gas, it is preferable to use an O3 gas which does not contain H. Furthermore, instead of an In(CH3)3 gas, an In(C2H5)3 gas may be used. Furthermore, instead of a Ga(CH3)3 gas, a Ga(C2H5)3 gas may be used. Furthermore, a Zn(CH3)2 gas may be used.
There is no particular limitation on the screen ratio (aspect ratio) of the display portion of the electronic device of one embodiment of the present invention. For example, the display portion is compatible with a variety of screen ratios such as 1:1 (a square), 4:3, 16:9, and 16:10.
There is no particular limitation on the shape of the display portion of the electronic device of one embodiment of the present invention. The display portion can have any of various shapes such as a rectangular shape, a polygonal shape (e.g., octagon), a circular shape, and an elliptical shape.
Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.
In this embodiment, a display module that can be used for the electronic device of one embodiment of the present invention will be described.
First, a display module including the display apparatus that can be used for the electronic device of one embodiment of the present invention will be described.
The display module 1280 includes a substrate 1291 and a substrate 1292. The display module 1280 includes a display portion 1281. The display portion 1281 is a region of the display module 1280 where an image is displayed, and is a region where light emitted from pixels provided in a pixel portion 1284 described later can be seen.
Note that the pixel portion 1284 and the pixel circuit portion 1283 correspond to the pixel layer PXAL described above, for example. The circuit portion 1282 corresponds to the circuit layer SICL described above, for example.
The pixel portion 1284 includes a plurality of pixels 1284a arranged periodically. An enlarged view of one pixel 1284a is illustrated on the right side in
The pixel circuit portion 1283 includes a plurality of pixel circuits 1283a arranged periodically.
One pixel circuit 1283a is a circuit that controls light emission from three light-emitting devices included in one pixel 1284a. One pixel circuit 1283a may be provided with three circuits each of which controls light emission from one light-emitting device. For example, the pixel circuit 1283a can include at least one selection transistor, one current control transistor (driving transistor), and a capacitor for one light-emitting device. In that case, a gate signal is input to a gate of the selection transistor, and a source signal is input to one of a source and a drain of the selection transistor. Thus, an active-matrix display apparatus is achieved.
The circuit portion 1282 includes a circuit for driving the pixel circuits 1283a in the pixel circuit portion 1283. For example, one or both of a gate line driver circuit and a source line driver circuit are preferably included. In addition, one or more selected from an arithmetic circuit, a memory circuit, and a power supply circuit may be included.
The FPC 1290 functions as a wiring for supplying a video signal or a power supply potential to the circuit portion 1282 from the outside. In addition, an IC may be mounted on the FPC 1290.
The display module 1280 can have a structure in which one or both of the pixel circuit portion 1283 and the circuit portion 1282 are stacked below the pixel portion 1284; thus, the aperture ratio (the effective display area ratio) of the display portion 1281 can be significantly high. For example, the aperture ratio of the display portion 1281 can be higher than or equal to 40% and lower than 100%, preferably higher than or equal to 50% and lower than or equal to 95%, further preferably higher than or equal to 60% and lower than or equal to 95%. Furthermore, the pixels 1284a can be arranged extremely densely and thus the display portion 1281 can have an extremely high definition. For example, the pixels 1284a are preferably arranged in the display portion 1281 with a definition higher than or equal to 2000 ppi, preferably higher than or equal to 3000 ppi, further preferably higher than or equal to 5000 ppi, still further preferably higher than or equal to 6000 ppi, and lower than or equal to 20000 ppi or lower than or equal to 30000 ppi.
Such a display module 1280 has an extremely high resolution and thus can be suitably used for a VR device such as a head-mounted display or a glasses-type AR device. For example, even with a structure in which the display portion of the display module 1280 is seen through a lens, pixels of the extremely-high-resolution display portion 1281 included in the display module 1280 are prevented from being perceived when the display portion is enlarged by the lens, so that display providing a strong sense of immersion can be performed. Without being limited thereto, the display module 1280 can be suitably used for electronic devices including relatively small display portions. For example, the display module 1280 can be suitably used for a display portion of a wearable electronic device such as a wristwatch.
Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.
In this embodiment, electronic devices each including a display apparatus will be described as examples of an electronic device of one embodiment of the present invention.
The electronic device 8300 includes a housing 8301, a display portion 8302, an operation button 8303, and a band-shaped fixing unit 8304.
The operation button 8303 has a function of a power button or the like. The electronic device 8300 may include a button other than the operation button 8303.
As illustrated in
For the display portion 8302, a display apparatus with an extremely high definition is preferably used, for example. When a high-definition display apparatus is used for the display portion 8302, it is possible to display a more realistic image that does not allow the user to perceive pixels even when the image is magnified using the lenses 8305 as illustrated in
The display portion 8302 can display an image for the right eye and an image for the left eye side by side on a right region and a left region, respectively. Thus, a three-dimensional image using binocular disparity can be displayed.
One image that can be seen by both eyes may be displayed on the entire display portion 8302. A panorama image can thus be displayed from end to end of the field of view, which can provide a stronger sense of reality.
Here, the display portion 8302 of the electronic device 8300 preferably has, for example, a mechanism for changing the curvature of the display portion 8302 to an optimal value in accordance with at least one of the size of the user's head and the positions of the user's eyes. For example, the user himself or herself may adjust the curvature of the display portion 8302 by operating a dial 8307 for adjusting the curvature of the display portion 8302. Alternatively, a sensor for detecting the size of the user's head or the positions of the user's eyes (e.g., a camera, a contact sensor, and a noncontact sensor) may be provided on the housing 8301, and a mechanism for adjusting the curvature of the display portion 8302 on the basis of detection data obtained by the sensor may be provided.
In the case where the lenses 8305 are used, a mechanism for adjusting the positions and angle of the lenses 8305 in synchronization with the curvature of the display portion 8302 is preferably provided. Alternatively, the dial 8306 may have a function of adjusting the angle of the lenses.
By contrast,
When the electronic device 8300 has such a mechanism for adjusting the curvature of the display portion 8302, an optimal display can be offered to a variety of users of all ages and genders.
When the curvature of the display portion 8302 is changed in accordance with contents displayed on the display portion 8302, the user can have a more realistic sensation. For example, shaking can be expressed by fluctuating the curvature of the display portion 8302. In this way, it is possible to produce various effects depending on the scene in contents, and provide the user with new experiences. A further realistic display can be provided when the display portion 8302 operates in conjunction with a vibration module provided in the housing 8301.
Note that the electronic device 8300 may include two display portions 8302 as illustrated in
Since the two display portions 8302 are included, the user's eyes can see their respective display portions. This allows a high screen resolution image to be displayed even when three-dimensional display using parallax is performed. In addition, the display portion 8302 is curved around an arc with the user's eye as an approximate center. This allows a uniform distance between the user's eye and the display surface of the display portion; thus, the user can see a more natural image. Even when the luminance or chromaticity of light from the display portion is changed depending on the angle at which the user sees it, since the user's eye is positioned in a normal direction of the display surface of the display portion, the influence of the change can be substantially ignorable and thus a more realistic image can be displayed.
A user can see display on the display portion 8302 through the lenses 8305. The display portion 8302 is preferably curved so that the user can feel high realistic sensation. Another image displayed on another region of the display portion 8302 is seen through the lenses 8305, so that three-dimensional display using parallax can be performed. Note that the structure is not limited to the structure in which one display portion 8302 is provided; two display portions 8302 may be provided and one display portion may be provided per eye of the user.
For the display portion 8302, a display apparatus with an extremely high definition is preferably used, for example. When a high-definition display apparatus is used for the display portion 8302, it is possible to display a more realistic image that does not allow the user to perceive pixels even when the image is magnified using the lenses 8305 as illustrated in
The head-mounted display, which is an electronic device of one embodiment of the present invention, may be an electronic device 8200 illustrated in
The electronic device 8200 includes a mounting portion 8201, a lens 8202, a main body 8203, a display portion 8204, and a cable 8205. A battery 8206 is incorporated in the mounting portion 8201.
The cable 8205 supplies power from the battery 8206 to the main body 8203. The main body 8203 includes a wireless receiver or the like and can display received image information on the display portion 8204. The main body 8203 includes a camera, and information on the movement of the eyeballs or the eyelids of the user can be used as an input means.
The mounting portion 8201 may include a plurality of electrodes capable of sensing current flowing accompanying with the movement of the user's eyeballs at a position in contact with the user to recognize the user's sight line. The mounting portion 8201 may also have a function of monitoring the user's pulse with use of current flowing through the electrodes. The mounting portion 8201 may include a variety of sensors such as a temperature sensor, a pressure sensor, and an acceleration sensor to have a function of displaying the user's biological information on the display portion 8204, a function of changing an image displayed on the display portion 8204 in accordance with the movement of the user's head, and the like.
The electronic device 8750 includes a pair of display apparatuses 8751, a housing 8752, a pair of mounting portions 8754, a cushion 8755, a pair of lenses 8756, and the like. The pair of display apparatuses 8751 is positioned to be seen through the lenses 8756 inside the housing 8752.
Here, one of the pair of display apparatuses 8751 corresponds to the display apparatus DSP described in Embodiment 1, for example. Although not illustrated, the electronic device 8750 illustrated in
The electronic device 8750 is an electronic device for VR. A user wearing the electronic device 8750 can see an image displayed on the display apparatus 8751 through the lens 8756. Furthermore, the pair of display apparatuses 8751 may display different images, whereby three-dimensional display using parallax can be performed.
An input terminal 8757 and an output terminal 8758 are provided on the back side of the housing 8752. To the input terminal 8757, a cable for supplying an image signal from an image output device or power for charging a battery provided in the housing 8752 can be connected. The output terminal 8758 can function as, for example, an audio output terminal to which earphones or headphones can be connected.
The housing 8752 preferably includes a mechanism by which the left and right positions of the lens 8756 and the display apparatus 8751 can be adjusted to the optimal positions in accordance with the position of the user's eye. In addition, the housing 8752 preferably includes a mechanism for adjusting focus by changing the distance between the lens 8756 and the display apparatus 8751.
With use of the camera, the display apparatus 8751, and the electronic component, the electronic device 8750 can estimate the state of a user of the electronic device 8750 and can display information on the estimated user's state on the display apparatus 8751. Alternatively, information on a state of a user of an electronic device connected to the electronic device 8750 through a network can be displayed on the display apparatus 8751.
The cushion 8755 is a portion in contact with the user's face (e.g., forehead and cheek). The cushion 8755 is in close contact with the user's face, so that light leakage can be prevented, which increases the sense of immersion. A soft material is preferably used for the cushion 8755 so that the cushion 8755 is in close contact with the face of the user wearing the electronic device 8750. For example, any of materials such as rubber, silicone rubber, urethane, and sponge can be used. Furthermore, when a sponge whose surface is covered with cloth or leather (for example, natural leather and synthetic leather) is used, a gap is unlikely to be generated between the user's face and the cushion 8755, whereby light leakage can be suitably prevented. Furthermore, using such a material is preferable because it has a soft texture and the user does not feel cold when wearing the device in a cold season, for example. The member in contact with user's skin, such as the cushion 8755 or the mounting portion 8754, is preferably detachable because cleaning or replacement can be easily performed.
The electronic device in this embodiment may further include earphones 8754A. The earphones 8754A include a communication portion (not illustrated) and have a wireless communication function. The earphones 8754A can output audio data with the wireless communication function. Note that the earphones 8754A may include a vibration mechanism to function as bone-conduction earphones.
Like earphones 8754B illustrated in
The earphones 8754A may include a sensor portion. With use of the sensor portion, the state of the user of the electronic device can be estimated.
The electronic device of one embodiment of the present invention may include one or more selected from an antenna, a battery, a camera, a speaker, a microphone, a touch sensor, and an operation button, in addition to any one of the above components.
The electronic device of one embodiment of the present invention may include a secondary battery, and it is preferable that the secondary battery be capable of being charged by contactless power transmission.
Examples of the secondary battery include a lithium ion secondary battery (e.g., a lithium polymer battery using a gel electrolyte (lithium ion polymer battery)), a nickel-hydride battery, a nickel-cadmium battery, an organic radical battery, a lead-acid battery, an air secondary battery, a nickel-zinc battery, and a silver-zinc battery.
The electronic device of one embodiment of the present invention may include an antenna. When a signal is received by the antenna, the electronic device can display an image, information, or the like on a display portion. When the electronic device includes an antenna and a secondary battery, the antenna may be used for contactless power transmission.
A display portion in an electronic device of one embodiment of the present invention can display an image with a screen resolution of, for example, full high definition, 4K2K, 8K4K, 16K8K, or higher.
Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.
In this embodiment, electronic devices each including a display apparatus fabricated using one embodiment of the present invention will be described.
Electronic devices described below as examples each include the display apparatus of one embodiment of the present invention in a display portion. Thus, the electronic devices achieve high screen resolution. In addition, the electronic devices can each achieve both high screen resolution and a large screen.
One embodiment of the present invention includes the display apparatus and one or more selected from an antenna, a battery, a housing, a camera, a speaker, a microphone, a touch sensor, and an operation button.
The electronic device of one embodiment of the present invention may include the secondary battery described in Embodiment 5, and it is preferable that the secondary battery be capable of being charged by contactless power transmission.
As the secondary battery, the secondary battery described in Embodiment 5 can be used, for example.
The electronic device of one embodiment of the present invention may include the antenna described in Embodiment 5.
A display portion in an electronic device of one embodiment of the present invention can display an image with a screen resolution of, for example, full high vision, 4K2K, 8K4K, 16K8K, or higher.
Examples of the electronic devices include electronic devices with relatively large screens, such as a television device, a laptop personal computer, a monitor device, digital signage, a pachinko machine, and a game machine. Moreover, examples of electronic devices with relatively small screens include a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable game machine, a portable information terminal, and an audio reproducing device.
The electronic device using one embodiment of the present invention can be incorporated along a surface (e.g., a flat surface and a curved surface) of an inner wall or an outer wall of a building (e.g., a house, a commercial facility and an industrial facility) or an interior or exterior surface (e.g., a flat surface and a curved surface) of a moving object (e.g., a car, a train, a ship, and a flying object).
An information terminal 5500 illustrated in
The display portion 5511 of the information terminal 5500 can be divided into an image region for displaying an image and a black region for displaying black and a character string by including the display apparatus described in the above embodiment.
The display portion 5902 of the wearable terminal can be divided into an image region for displaying an image and a black region for displaying black and a character string by including the display apparatus described in the above embodiment.
[Information terminal]
Like the information terminal 5500 described above, the display portion 5331 of the laptop information terminal 5300 can be divided into an image region for displaying an image and a black region for displaying black and a character string by including the display apparatus described in the above embodiment.
Although the smartphone, the wearable terminal, and the laptop information terminal are respectively illustrated in
The camera 8000 includes a housing 8001, a display portion 8002, operation buttons 8003, a shutter button 8004, and the like. In addition, a detachable lens 8006 is attached to the camera 8000.
Note that the lens 8006 and the housing may be integrated with each other in the camera 8000.
The camera 8000 can take images by the press of the shutter button 8004 or touch on the display portion 8002 functioning as a touch panel.
The housing 8001 includes a mount including an electrode, so that, in addition to the finder 8100, a stroboscope or the like can be connected to the housing.
The finder 8100 includes a housing 8101, a display portion 8102, and a button 8103.
The housing 8101 is attached to the camera 8000 in engagement with a mount of the camera 8000. In the finder 8100, an image or the like received from the camera 8000 can be displayed on the display portion 8102.
The button 8103 has a function of a power button.
The display apparatus of one embodiment of the present invention can be used for the display portion 8002 of the camera 8000 and the display portion 8102 of the finder 8100. Note that a finder may be incorporated in the camera 8000.
Images displayed on the portable game machine 5200 can be output with a display apparatus such as a television device, a personal computer display, a game display, or a head-mounted display, for example.
The display portion 5202 of the portable game machine 5200 can be divided into an image region for displaying an image and a black region for displaying black and a character string by including the display apparatus described in the above embodiment. In addition, the portable game machine 5200 with low power consumption can be provided. Moreover, heat generation from a circuit can be reduced owing to low power consumption; thus, the influence of heat generation on the circuit itself, a peripheral circuit, and a module can be reduced.
Although
The display portion 9001 of the television device 9000 can be divided into an image region for displaying an image and a black region for displaying black and a character string by including the display apparatus described in the above embodiment. In addition, the television device 9000 with low power consumption can be provided. Moreover, heat generation from a circuit can be reduced owing to low power consumption; thus, the influence of heat generation on the circuit itself, a peripheral circuit, and a module can be reduced.
The display apparatus of one embodiment of the present invention can be used around a driver's seat in a car, which is a moving vehicle.
The display panel 5701 to the display panel 5703 can provide a variety of kinds of information by displaying navigation information, a speedometer, a tachometer, a mileage, a fuel meter, a gearshift indicator, and air-condition settings, for example. The content and layout of the display on the display panels can be changed appropriately to suit the user's preferences, so that the design can be improved. The display panel 5701 to the display panel 5703 can also be used as lighting devices.
The display panel 5704 can compensate for the view obstructed by the pillar (blind areas) by showing an image taken by an imaging unit provided for the car body. That is, showing an image taken by an imaging unit provided on the outside of the car body leads to elimination of blind areas and enhancement of safety. Display of an image that complements for a portion that cannot be seen makes it possible to confirm safety more naturally and comfortably. The display panel 5704 can also be used as a lighting device.
The display apparatus of one embodiment of the present invention can be used for the display panel 5701 to the display panel 5704, for example.
Although a car is described above as an example of a moving vehicle, the moving vehicle is not limited to a car. Examples of moving vehicles include a train, a monorail train, a ship, and a flying object (e.g., a helicopter, an unmanned aircraft (a drone), an airplane, and a rocket), and these moving vehicles can include the display apparatus of one embodiment of the present invention.
Although the electronic device attachable to a wall is described above as an example of digital signage, the kind of digital signage is not limited thereto. Examples of the digital signage include digital signage attached to a pillar, freestanding digital signage placed on the ground, and digital signage mounted on a rooftop or a side wall of an architecture such as a building.
Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.
DSP: display apparatus, DIS: display portion, MA: image region, BA: black region, BA1: black region, BA2: black region, BA3: black region, BA4: black region, LA: character string, LA1: character string, LA2: character string. LA3: character string, LA4: character string, CSB: center portion, LI: image, ARA: display region, ARD: circuit region, SICL: circuit layer, LINL: wiring layer, PXAL: pixel layer, BS: substrate, DRV: driver circuit region, LIA: region, SDS: circuit, SD: driver circuit, GDS: circuit, GD: driver circuit, PRPH: peripheral circuit, DMG: distribution circuit, DMS: distribution circuit, CTR: control unit, MD: memory device, PG: voltage generation circuit, TMC: timing controller, CKS: clock signal generation circuit, CK1: circuit, CK2: circuit, GPS: image processing unit, GP1: circuit, GP2: circuit, INT: interface BW: bus wiring, HMD: head-mounted display, SNC: sensor, SOP: sound output portion, SIP: sound input portion, MU: memory 20) unit, CP: control portion, PGP: image generation portion, HKB: conversion portion, ANT: antenna. BE: bus wiring. RMC: controller, SMP: information terminal, UR: user, OTH: another person, SND: sound, WV: wireless signal, ST1: step. ST2: step, ST3: step, ST4: step, ST5: step, SU1: step, SU2: step, SU3: step, SU4: step, SU5: step, SV1: step, SV2: step, SV3: step, SV4: step, SV5: step, SV6: step. SW1: step, SW2: step, SW3: step, SW4: step, SW5: step, SW6: step, SW7: step, OSL: layer, EML: layer, ANO: wiring. VCOM: wiring, V0: wiring, SL: wiring, GL: wiring, GL1: wiring, GL2: wiring. GL3: wiring, 30: driver circuit, 70A: pixel, 70B: pixel, 80: pixel, 80a: subpixel, 80b: subpixel. 80c: subpixel, 80d: subpixel, 102: substrate, 111a: insulator, 111b: insulator, 112: insulator, 113: insulator, 113a: insulator, 113b: insulator, 113c: insulator, 118: sacrificial layer, 119: sacrificial layer, 121a: conductor, 121b: conductor, 121c: conductor, 121CM: conductor, 30) 122a: conductor, 122b: conductor, 122c: conductor, 123: conductor, 123CM: region, 141: EL layer, 141a: EL layer, 141b: EL layer, 141c: EL layer, 142: EL layer, 150: light-emitting device, 150a: light-emitting device, 150b: light-emitting device, 150c: light-emitting device, 162: insulator, 163: resin layer, 164: adhesive layer, 165: adhesive layer, 166a: coloring layer, 166b: coloring layer, 166c: coloring layer, 200: transistor, 202: insulator, 210): substrate, 214: insulator, 216: conductor, 220; insulator, 222: insulator, 224: insulator, 226: insulator, 228: conductor, 230: conductor, 250): insulator, 300: transistor, 310: substrate, 312: element isolation layer, 313: semiconductor region, 314a: low-resistance region, 314b: low-resistance region, 315: insulator, 316: conductor, 317: insulator, 320: insulator, 322: insulator, 324: insulator, 326: insulator, 328: conductor, 330: conductor, 350: insulator, 352: insulator, 354: insulator, 356: conductor, 360: insulator, 362: insulator, 364: insulator, 366: conductor, 370: insulator, 372: insulator, 376: conductor, 380: insulator, 400: pixel circuit, 400A: pixel circuit, 400B: pixel circuit, 400C: pixel circuit, 400D: pixel circuit, 400E: pixel circuit, 400F: pixel circuit, 400G: pixel circuit, 400H: pixel circuit, 500: transistor, 500A: transistor, 500B: transistor, 500C: transistor, 500D: transistor, 501: substrate, 512: insulator, 514: insulator, 540: conductor, 576: insulator, 581: insulator, 600: capacitor, 600A: capacitor, 1000: display apparatus, 1280: display module, 1281: display portion, 1290: FPC, 1282: circuit portion, 1283: pixel circuit portion, 1283a: pixel circuit, 1284: pixel portion, 1284a: pixel, 1285: terminal portion, 1286: wiring portion, 1291: substrate, 1292: substrate, 1430a: light-emitting device, 1430b: light-emitting device, 1430c: light-emitting device, 4400a: light-emitting unit, 4400b: light-emitting unit, 4411: light-emitting layer, 4412: light-emitting layer, 4413: light-emitting layer, 4420: layer, 4420-1: layer, 4420-2: layer, 4430: layer, 4430-1: layer, 4430-2: layer, 4440: intermediate layer, 5200: portable game machine, 5201: housing, 5202: display portion, 5203: button, 5300: laptop information terminal, 5330a: housing, 5330b: housing, 5331: display portion, 5350: key board portion, 5500: information terminal, 5510: housing, 5511: display portion, 5701: display panel, 5702: display panel, 5703: display panel, 5704: display panel, 5900: information terminal, 5901: housing, 5902: display portion, 5903: operation button, 5904: crown, 5905: band, 6200: digital signage, 6201: wall, 8000: camera, 8001: housing, 8002: display portion, 8003: operation button, 8004: shutter button, 8006: lens, 8100: finder, 8101: housing, 8102: display portion, 8103: button, 8200: electronic device, 8201: mounting portion, 8202: lens, 8203: main body, 8204: display portion, 8205: cable, 8206: battery, 8300: electronic device, 8301: housing, 8302: display portion, 8303: operation button, 8304: fixing unit, 8304a: fixing unit, 8305: lens, 8306: dial, 8307: dial, 8308: driver portion, 8310: user, 8311: user, 8750: electronic device, 8751: display apparatus, 8752: housing, 8754: mounting portion, 8754A: earphones, 8754B: earphones, 8756: lens, 8757: input terminal, 8758: output terminal, 9000: television device, 9001: display portion, 9002: housing, 9003: speaker, 9005: operation key, 9006: connection terminal, 9007: sensor
| Number | Date | Country | Kind |
|---|---|---|---|
| 2021-138119 | Aug 2021 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/IB2022/057686 | 8/17/2022 | WO |
