The disclosure relates to a display device and a method for manufacturing the display device.
In recent years, light-emitting organic electroluminescence (EL) display devices using organic EL elements are drawing attention as a replacement for liquid crystal display devices. An organic EL display device includes, for example: a resin substrate; a thin-film transistor (TFT) layer provided on the resin substrate; an organic EL element layer provided on the TFT layer; and a sealing film provided on the organic EL element layer. The TFT layer includes TFTs each disposed to a corresponding one of sub-pixels serving as the minimum unit of an image. The organic EL element layer includes organic EL elements arranged to correspond to the sub-pixels. The sealing film covers the organic EL elements.
Patent Document 1 discloses, for example, a display device including: an undercoat having a three-layer structure of a silicon oxide film, a silicon nitride film, and a silicon oxide film; a gate insulating film made of a silicon oxide film; a first interlayer insulating film made of a silicon nitride film; a second interlayer insulating film made of a silicon oxide film; and a circuit layer corresponding to the above TFT layer.
In an organic EL display device, the display region to display an image desirably includes therein a non-display region shaped into an island for installation of, for example, a camera and a fingerprint sensor. The non-display region is desirably provided with a through hole opening along the thickness of the non-display region. Here, the through hole is created in the non-display region with, for example, laser light circularly scanning and cutting the resin substrate (and various thin films formed on the resin substrate) included in the organic EL display device. Around the through hole, however, a crack might open in an inorganic insulating film included in the TFT layer.
In view of the above problem, the disclosure is intended to reduce the risk of a crack opening in an inorganic insulating film around a through hole provided to a non-display region.
In order to accomplish the above intention, a display device according to the disclosure includes: a resin substrate; a thin-film transistor layer provided on the resin substrate, and including a first inorganic insulating film; a light-emitting element layer provided on the thin-film transistor layer, and including a plurality of light-emitting elements arranged to correspond to a plurality of sub-pixels included in a display region; a sealing film provided on the light-emitting element layer to cover the light-emitting elements, and including a second inorganic insulating film and a third inorganic insulating film stacked on top of each other in a stated order; a frame region provided around the display region; a non-display region shaped into an island and provided inside the display region; and a through hole formed to penetrate the non-display region along a thickness of the resin substrate. In the non-display region, the first inorganic insulating film includes an opening provided to surround the through hole and penetrating the first inorganic insulating film. The second inorganic insulating film is in contact with the resin substrate exposed through the opening from the first inorganic insulating film.
A method for manufacturing a display device according to the disclosure includes steps of: (a) forming a resin mother substrate on a support substrate; (b) forming a thin-film transistor layer on the resin mother substrate in a matrix, the thin-film transistor layer including a first inorganic insulating film; (c) forming a light-emitting element layer on the thin-film transistor layer in a matrix, the light-emitting element layer including a plurality of light-emitting elements arranged to correspond to a plurality of sub-pixels included in a display region; (d) forming a sealing film on the light-emitting element layer in a matrix to cover the light-emitting elements, the sealing film including a second inorganic insulating film and a third inorganic insulating film stacked on top of each other in a stated order; (e) dividing the resin mother substrate, for each of panels including the display region, into a plurality of resin substrates, step (e) succeeding step (d); and (f) forming a through hole to penetrate a non-display region along a thickness of each of the resin substrates, the non-display region being shaped into an island and provided inside the display region to be disposed to each resin substrate. Step (c) includes: (g) forming a plurality of first electrodes on the thin-film transistor layer; (h) forming an edge cover to cover a peripheral end of each of the first electrodes; (i) forming a functional layer on each of the first electrodes exposed from the edge cover; and (j) forming a second electrode to cover the functional layer. Step (c) further includes between step (h) and step (i): (k) applying a resist to a surface of a mother substrate on which the edge cover is formed; (l) patterning the resist and forming a resist pattern; and (m) etching the first inorganic insulating film exposed from the resist pattern, and forming an opening surrounding a region in which the through hole is formed and penetrating the first inorganic insulating film.
According to the disclosure, in the non-display region, the first inorganic insulating film is provided with the opening surrounding the through hole and penetrating the first inorganic insulating film. Such a feature makes it possible to reduce the risk of a crack opening in an inorganic insulating film around the through hole provided to the non-display region.
Described below in derail are embodiments of the disclosure, with reference to the drawings. Note that the disclosure shall not be limited to these embodiments.
As illustrated in
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In
As illustrated in
The resin substrate layer 10a is made of, for example, polyimide resin.
As illustrated in
The base coat film 11 is, for example, a monolayer inorganic insulating film made of such materials as silicon nitride, silicon oxide, and silicon oxide nitride, or a multilayer inorganic insulating film made of these materials.
As illustrated in
As illustrated in
Note that, as an example, the first TFTs 9a and the second TFTs 9b in this embodiment are top gate TFTs. Alternatively, the first TFTs 9a and the second TFTs 9b may be bottom gate TFTs.
As illustrated in
The planarization film 19a is made of, for example, a positively photosensitive resin such as polyimide resin.
The organic EL element layer 30 illustrated in
Each of the organic EL elements 25 illustrated in
As illustrated in
As illustrated in
The hole injection layer 1, also referred to as an anode buffer layer, is capable of approximating the energy levels of the first electrode 21a and the organic EL layer 23 and increasing efficiency in injection of the holes from the first electrode 21a to the organic EL layer 23. Exemplary materials of the hole injection layer 1 may include triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, phenylenediamine derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, and stilbene derivatives.
The hole-transport layer 2 is capable of improving efficiency in transporting the holes from the first electrode 21a to the organic EL layer 23. Exemplary materials of the hole transport-layer 2 may include porphyrin derivatives, aromatic tertiary amine compounds, styryl amine derivatives, polyvinylcarbazole, poly-p-phenylene vinylene, polysilane, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amine-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, hydrogenated amorphous silicon, hydrogenated amorphous silicon carbide, zinc sulfide, and zinc selenide.
The light-emitting layer 3 is a region into which the holes and the electrons are injected from the first electrode 21a and the second electrode 24 and recombine with each other, when a voltage is applied with the first electrode 21a and the second electrode 24. This light-emitting layer 3 is formed of a material with high light emission efficiency. Exemplary materials of the light-emitting layer 3 may include metal oxinoid compounds [8-hydroxyquinoline metal complexes], naphthalene derivatives, anthracene derivatives, diphenylethylene derivatives, vinylacetone derivatives, triphenylamine derivatives, butadiene derivatives, coumarin derivatives, benzoxazole derivatives, oxadiazole derivatives, oxazole derivatives, benzimidazole derivatives, thiadiazole derivatives, benzothiazole derivatives, styryl derivatives, styrylamine derivatives, bisstyrylbenzene derivatives, trisstyrylbenzene derivatives, perylene derivatives, perinone derivatives, aminopyrene derivatives, pyridine derivatives, rodamine derivatives, acridine derivatives, phenoxazone, quinacridone derivatives, rubrene, poly-p-phenylene vinylene, and polysilane.
The electron-transport layer 4 is capable of efficiently transporting the electrons to the light-emitting layer 3. Exemplary materials of the electron-transport layer 4 may include, as organic compounds, oxadiazole derivatives, triazole derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, tetracyanoanthraquinodimethane derivatives, diphenoquinone derivatives, fluorenone derivatives, silole derivatives, and metal oxinoid compounds.
The electron-injection layer 5 is capable of approximating the energy levels of the second electrode 24 and the organic EL layer 23, and increasing efficiency in injection of the electrons from the second electrode 24 to the organic EL layer 23. Such a feature makes it possible to decrease a drive voltage of the organic EL element 25. The electron-injection layer 5 may also be referred to as a cathode buffer layer. Exemplary materials of the electron-injection layer 5 may include: such inorganic alkaline compounds as lithium fluoride (LiF), magnesium fluoride magnesium fluoride (MgF2), calcium fluoride (CaF2), strontium fluoride (SrF2), and barium fluoride (BaF2); aluminum oxide (Al2O3); and strontium oxide (SrO).
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Moreover, as illustrated in
The first outer barrier wall Wa illustrated in
The second outer barrier wall Wb illustrated in
Furthermore, as illustrated in
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The first inner barrier wall Wc illustrated in
The second inner barrier wall Wd illustrated in
The above organic EL display device 50a displays an image as follows: In each sub-pixel P, a gate signal is input through the gate line 14 to the first TFT 9a. The first TFT 9a turns ON. Through the source line 18f, a data signal is written in the gate electrode 14b of the second TFT 9b and the capacitor 9c. A current in accordance with a gate voltage of the second TFT 9b is supplied from the power supply line 18g to the organic EL layer 23. Hence, the light-emitting layer 3 of the organic EL layer 23 emits light and displays the image. Note that, in the organic EL display device 50a, even if the first TFT 9a turns OFF, the gate voltage of the second TFT 9b is held in the capacitor 9c. Hence, the light-emitting layer 3 keeps emitting light until a gate signal of the next frame is input.
Described next is a method for manufacturing the organic EL display device 50a of this embodiment. Note that the method for manufacturing the organic EL display device 50a of this embodiment includes: a FFT layer forming step; an organic EL element layer forming step; a sealing film forming step; a dividing step; and a through hole forming step.
TFT Layer Forming Step
Non-photosensitive polyimide resin is applied to a support substrate 105 (see
Organic EL Element Layer Forming Step (Light-Emitting Element Layer Forming Step)
First, a multilayer conductive film including ITO/silver alloy (a MgAg film)/ITO is deposited by, for example, sputtering on the planarization film 19a of each TFT layer 20 formed in the TFT layer forming step. After that, the multilayer conductive film is patterned by photolithography and etched, and the resist is removed. Hence, a plurality of the first electrodes 21a are formed for each panel unit (a first electrode forming step).
Next, a polyimide-based photosensitive resin film is applied by, for example, spin coating and slit coating to the surface of the mother substrate on which the first electrodes 21a are formed for each panel unit. After that, the applied film is prebaked, exposed, developed, and postbaked, so that the edge cover 22a is formed for each panel unit (an edge cover forming unit).
Furthermore, as illustrated in
After that, the resist R is exposed through a photo mask and deposited to be patterned. As illustrated in
After that, the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 exposed from the resist pattern Ra are removed by dry etching. Hence, for each panel unit, an opening (M) is formed in a circle to surround a region in which the through hole H is formed, and to penetrate the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 (an opening forming step). In the opening forming step illustrated in
After that, a plurality of the organic EL layers 23 (the hole-injection layers 1, the hole-transport layers 2, the light-emitting layers 3, the electron-transport layers 4, and the electron-injection layers 5) are formed by, for example, vacuum vapor deposition on the first electrodes 21a exposed from the edge cover 22a for each panel unit (an organic EL layer forming step).
Furthermore, for each panel unit, the second electrode 24 is formed by, for example, vacuum vapor deposition to cover the organic EL layers 23 in each panel unit (a second electrode forming step).
Hence, the organic EL element layers 30 are formed in a matrix.
Sealing Film Forming Step
First, on a surface of the substrate on which the organic EL element layers 30 are formed in the above organic EL element layer forming step, inorganic insulating films such as, for example, silicon nitride films, silicon oxide films, and silicon oxide nitride films are deposited by the plasma chemical vapor deposition (CVD) using a mask. As illustrated in
Next, on a surface of the substrate on which the second inorganic films 36 are formed, an organic resin material such as acrylic resin is applied by, for example, ink-jet printing to form a plurality of the organic insulating films 37 in a matrix.
Furthermore, on the substrate on which the organic insulating films 37 are formed, inorganic insulating films such as, for example, silicon nitride films, silicon oxide films, and silicon nitride oxide films are deposited as a plurality of the third inorganic insulating films 38 by the plasma CVD using a mask. Hence, a plurality of the sealing films 40 are formed.
Dividing Step
First, in the sealing film forming step, a protective sheet (not shown) is attached to the surface of the substrate on which the sealing films 40 are formed in the above sealing film forming step. Next, laser light is emitted to the support substrate 105 of the resin mother substrate layer 110, and the support substrate 105 is removed from a lower face of the resin mother substrate layer 110. A protective sheet (not shown) is attached to the lower face of the resin mother substrate layer 110 with the support substrate 105 removed.
Furthermore, along the prospective division line C (see the long dashed double-short dashed line in
Through Hole Forming Step
Each of the resin substrate layers 10 that is divided into in the above separating step is provided thereon with the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17. These films have the opening (M) formed in a circle. Such laser light as a yttrium aluminium garnet (YAG) laser is emitted, scanning circularly, inside the opening (M), and the through hole H is formed. Hence, when the through hole H is formed, the opening (M) formed in a circle and provided to the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 serves as the opening M shaped into a circular frame.
Through the above steps, the organic EL display device 50a of this embodiment can be produced. Note that described in this embodiment as an example is a manufacturing method in which the opening M is formed in the organic EL element layer forming step. Alternatively, in order to save the time for etching, a portion of the opening M may be formed in the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 when the contact holes are formed in the TFT layer forming step, and the rest of the opening M may be formed in the base coat film 11 in the organic EL element layer forming step.
Moreover, the organic EL display device 50a described in this embodiment as an example includes the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 laid flat in the non-display region N between the second inner barrier wall Wd and the opening M. Alternatively introduced may be organic EL display devices 50b to 50d each provided with a protruding structure between the second inner barrier wall Wd and the opening M.
Described below are the organic EL display device 50b in a first modification to the organic EL display device 50d in a third modification.
First Modification
As illustrated in
As illustrated in
The multilayer thick-film portions E included in the organic EL display device 50b are thicker than the inorganic films around the multilayer thick film portions E. Such a feature makes it possible to reduce a crack propagating into the semiconductor layer and the inorganic insulating films.
Second Modification
As illustrated in
As illustrated in
The thick-film resin layers Ja included in the organic EL display device 50c extend a path of the second inorganic insulating film 36 and the third inorganic insulating film 38 to the display region D. Such a feature makes it possible to reduce the risk of a crack propagating into the second inorganic insulating film 36 and the third inorganic insulating film 38.
Third Modification
As illustrated in
As illustrated in
The multilayer thick-film portions E and the thick-film resin layers Ja included in the organic EL display device 50d can reduce the risk of a crack propagating into the semiconductor layer and the inorganic insulating films included in the TFT layer 20 as seen in the first modification, and into the second inorganic insulating film 36 and the third insulating film 38 included in the sealing film 40 as seen in the second modification.
Note that the above modifications describe the organic EL display devices 50b to 50d as examples. The disclosure is also applicable to an organic EL display device whose structure is a combination of the above modifications.
As can be seen, according to the organic EL display device 50a and the method for manufacturing the organic EL display device 50a of this embodiment, in the opening forming step of the organic EL element layer forming step, the opening (M) formed in a circle is provided to, and penetrates, the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 arranged in the non-display region N defined in a shape of an island inside the display region D. The opening (M) surrounds the through hole H formed in the through hole forming step to be carried out later. After that, in the through hole forming step, laser light is emitted, scanning circularly, inside the opening (M) formed in a circle, to cut the resin substrate layer 10a. Hence, the through hole H is formed in the non-display region N. Here, the through hole H is formed inside the opening (M) disposed in the non-display region N and shaped into a circle. Hence, the non-display region N of the organic display device 50a is provided with the opening M shaped into a circular frame and surrounding the through hole H. Hence, in the through hole forming step, none of the inorganic insulating films; namely, the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17, is disposed to a portion to which the laser light is emitted when the through hole H is formed. Thus, even though the through hole H is formed, the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 are less likely to have a crack. Such features make it possible to reduce the risk of a crack opening in the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 around the through hole H provided to the non-display region N.
Moreover, according to the organic EL display device 50a and the method for manufacturing the organic EL display device 50a of this embodiment, the second inorganic insulating film 36 of the sealing film 40 is in contact with the top face of the resin substrate layer 10a exposed through the opening M from the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17. Hence, the second inorganic insulating film 36 of the sealing film 40 is in contact with the side face of the opening M formed in the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17, and with a top face of the second interlayer insulating film 17. Such a feature makes it possible to ensure sealing capability of the sealing film 40 and reduce deterioration of the organic EL elements 25.
Furthermore, according to the organic EL display device 50a and the method for manufacturing the organic EL display device 50a of this embodiment, the edge cover 22a is formed in the organic EL element layer forming step. After that, a protective resist to protect the surface of the substrate until the subsequent vapor-deposition step is used as the resist pattern Ra to be used in the opening forming step. Hence, the opening M can be formed.
In addition, according to the organic EL display device 50a and the method for manufacturing the organic EL display device 50a of this embodiment, in the opening forming step, the slit S is formed in, to penetrate, the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 in order to include the prospective division line C for dividing the resin mother substrate 110 in the dividing step. Hence, none of the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17, which are disposed on the three sides of the frame region F and not along the terminal unit T, is provided along the prospective division line C. Such a feature makes it possible to reduce the risk of a crack opening in a portion of the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17, the portion being laid along the prospective division line C.
Described in the first embodiment are the organic EL display devices 50a to 50d including the resin substrate layer 10a of a monolayer structure. Alternatively described in this embodiment is an organic EL display device 50e including a resin substrate layer 10b of a multilayer structure.
Similar to the organic EL display device 50a of the first embodiment, the organic EL display device 50e includes, for example, the display region D shaped into a rectangle and displaying an image, and the frame region F shaped into a rectangular frame and provided around the display region D.
As illustrated in
As illustrated in
The display region D and the frame region F of the organic EL display device 50e are substantially the same in configuration as the display region D and the frame region F of the organic EL display device 50a in the first embodiment.
Similar to the organic EL display device 50a of the above first embodiment, the above organic EL display device 50e is flexible, and allows, in each of the sub-pixels P, the light-emitting layer 3 of the organic EL layer 23 to appropriately emit light through the first TFTs 9a and the second TFTs 9b to display an image.
Note that this embodiment describes, as an example, the organic EL display device 50e based on the organic EL display device 50a of the above first embodiment. The disclosure is also applicable to an organic EL display device whose structure is a combination of this embodiment and the above modifications.
The organic EL display device 50e of this embodiment can be manufactured by a modification of the method for manufacturing the organic EL display device 50a of the above first embodiment.
Specifically, when the resin mother substrate layer 110 is formed in the TFT layer forming step, first, non-photosensitive polyimide resin is applied to the support substrate 105. After that, a film of the applied resin is prebaked and postbaked so that the first resin mother substrate layer (6) is formed. Next, on a surface of the substrate on which the first resin mother substrate layer (6) is formed, such a film as a silicon nitride film, a silicon oxide film, and a silicon oxide nitride film is deposited by, for example, the plasma CVD to form the fourth inorganic insulating film 7. Moreover, on a surface of the substrate on which the fourth inorganic insulating film 7 is formed, photosensitive polyimide resin is applied. After that, a film of the applied resin is prebaked, exposed, developed, and postbaked to form the second resin mother substrate layer (8). Hence, the resin mother substrate layer (10b) is formed.
Moreover, in the opening forming step of the organic EL element layer forming step, the second resin substrate layer 8, the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 exposed from the resist pattern Ra are removed by dry etching. Hence, for each panel unit, the opening (M) is formed in a circle to surround a region in which the through hole H is formed, and to penetrate the second resin substrate layer 8, the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17.
Furthermore, in the sealing film forming step, on a surface of the substrate on which the organic EL element layers 30 are formed in the organic EL element layer forming step, inorganic insulating films such as silicon nitride films, silicon oxide films, and silicon oxide nitride films are deposited by the plasma chemical vapor deposition (CVD) using a mask. The second inorganic insulating films 36 are formed in a matrix to cover a side face of the opening M in the second resin substrate layer 8 and to come into contact with the top face of the fourth inorganic insulating film 7.
As can be seen, according to the organic EL display device 50e and the method for manufacturing the organic EL display device 50e of this embodiment, in the opening forming step of the organic EL element layer forming step, the opening (M) formed in a circle is provided to, and penetrates, the second resin substrate layer 8, the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 arranged in the non-display region N defined in a shape of an island inside the display region D. The opening (M) surrounds the through hole H formed in the through hole forming step to be carried out later. After that, in the through hole forming step, laser light is emitted, scanning circularly, inside the opening (M) formed in a circle, to cut the resin substrate layer 10b. Hence, the through hole H is formed in the non-display region N. Here, the through hole H is formed inside the opening (M) disposed in the non-display region N and shaped into a circle. Hence, the non-display region N of the organic display device 50e is provided with the opening M shaped into a circular frame and surrounding the through hole H. Hence, in the through hole forming step, none of the inorganic insulating films; namely, the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17, is disposed to a portion to which the laser light is emitted when the through hole H is formed. Thus, even though the through hole H is formed, the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 are less likely to have a crack. Such features make it possible to reduce the risk of a crack opening in the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 around the through hole H provided to the non-display region N.
Moreover, according to the organic EL display device 50e and the method for manufacturing the organic EL display device 50e of this embodiment, the second inorganic insulating film 36 of the sealing film 40 is in contact with the top face of the fourth inorganic insulating film 7 in the resin substrate layer 10b exposed through the opening M from the second resin substrate layer 8, the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17. Hence, the second inorganic insulating film 36 of the sealing film 40 is in contact with the top face of the fourth inorganic insulating film 7, with the side face of the opening M formed in the base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17, and with a top face of the second interlayer insulating film 17. Such a feature makes it possible to ensure sealing capability of the sealing film 40 and reduce deterioration of the organic EL elements 25.
Furthermore, according to the organic EL display device 50e and the method for manufacturing the organic EL display device 50e of this embodiment, the side face of the opening M in the second resin substrate layer 8 is covered with the second inorganic insulating film 36 of the sealing film 40. Such a feature makes it possible to keep foreign objects including water from entering the second resin substrate layer 8, and reduce deterioration of the organic EL elements 25.
In the above embodiments, the organic EL layer is formed of a multilayer including such five layers as the hole-injection layer, the hole-transport layer, the light-emitting layer, the electron-transport layer, and the electron-injection layer. Alternatively, the organic EL layer may be formed of a multilayer including such three layers as a hole-injection and hole-transport layer, the light-emitting layer, and an electron-transport and electron-injection layer.
Moreover, in the organic EL display devices of the above embodiments described as examples, the first electrode is an anode and the second electrode is a cathode. Alternatively, the disclosure is applicable to an organic EL display device including an organic EL layer whose multilayered structure is inverted so that the first electrode is a cathode and the second electrode is an anode.
Furthermore, in the organic EL display devices of the above embodiments described as examples, the electrodes of the TFTs connected to the first electrodes are drain electrodes. Alternatively, the disclosure is applicable to an organic EL display device in which the electrodes of the TFTs connected to the first electrodes are referred to as source electrodes.
In addition, in the organic EL display devices 50a to 50e of the above embodiments described as examples, the through hole H is shaped into a circle in plan view. Alternatively, the through hole H may be, for example, shaped into such a polygon as a rectangle in plan view.
Moreover, the above embodiments describe as examples the organic EL display devices 50a to 50e each including the sealing film 40 in which the organic insulating film 37 is provided between the second inorganic insulating film 36 and the third inorganic insulating film 38. Alternatively, the disclosure can also be applied to an organic EL display device including an organic vapor-deposited film formed between the second inorganic insulating film 36 and the third inorganic insulating film 38, and the organic vapor-deposited film is treated with a plasma ashing process to block foreign substances. Even if foreign substances are found on the display region, such a sealing film can ensure sealability with the third inorganic insulating film, making it possible to improve reliability.
In addition, the display devices of the embodiments described as examples are organic EL display devices. Alternatively, the disclosure is applicable to a display device including a plurality of light-emitting elements driven by a current. For example, the disclosure is applicable to a display device including quantum-dot light emitting diodes (QLEDs); that is, light-emitting elements using layers containing quantum dots.
As can be seen, the disclosure is applicable to a flexible display device.
Filing Document | Filing Date | Country | Kind |
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PCT/JP2019/012389 | 3/25/2019 | WO | 00 |