Patent Application
20230282790
This application claims priority to Korean Patent Application No. 10-2022-0027808, filed on Mar. 4, 2022, and all the benefits accruing therefrom under 35 U.S.C. § 119, the content of which in its entirety is herein incorporated by reference.
The present disclosure generally relates to a display device and a method of manufacturing the display device. More particularly, the present disclosure relates to a display device capable of preventing voltage drop of a common voltage provided to a common electrode.
A display device includes light emitting diodes, and the light emitting diodes include a common electrode formed of a plate electrode. As the size of the display device increases, the size of the common electrode also increases. In addition, as the thickness of the display device decreases, the thickness of the common electrode also decreases. Accordingly, the need for a novel structure to prevent a voltage drop of the common voltage provided to the common electrode has increased.
Embodiments provide a display device.
Embodiments provide a method of manufacturing the display device.
A display device according to an embodiment may include a voltage line disposed on a substrate, a passivation layer disposed on the voltage line and having an undercut shape, a first connecting electrode disposed on the voltage line and disposed inside the undercut shape, a second connecting electrode disposed on the voltage line and electrically connecting the voltage line to the first connecting line, and a common electrode disposed on the second connecting electrode and electrically connected to the voltage line through at least one of the first connecting electrode and the second connecting electrode.
In an embodiment, the common electrode may overlap each of the first connecting electrode and the second connecting electrode and may contact each of the first connecting electrode and the second connecting electrode.
In an embodiment, the common electrode may not contact the voltage line.
In an embodiment, the first connecting electrode may contact the second connecting electrode.
In an embodiment, the second connecting electrode may contact the voltage line, the first connecting electrode, and the common electrode.
In an embodiment, the display device may further include an emission layer cut off by the undercut shape.
In an embodiment, the emission layer may be disposed between the second connecting electrode and the common electrode.
In an embodiment, the common electrode may cover a side surface of the emission layer.
In an embodiment, the display device may further include a data line disposed in a same layer as the voltage line, a first gate electrode disposed in a same layer as the first connecting electrode, a capping electrode disposed on the first gate electrode, and a pixel electrode disposed in a same layer as the second connecting electrode.
A method of manufacturing a display device according to an embodiment may include steps of forming a voltage line on a substrate, forming a first connecting electrode and an etch electrode, on the voltage line, forming a preliminary passivation layer on the etch electrode to cover the etch electrode, patterning a passivation layer to expose a side surface of the etch electrode, removing the etch electrode so that the passivation layer has an undercut shape, forming a second connecting electrode electrically connecting the voltage line to the first connecting electrode, and forming a common electrode on the second connecting electrode, the common electrode is electrically connected to the voltage line through at least one of the first connecting electrode and the second connecting electrode.
In an embodiment, the etch electrode may react with a first etchant through the side surface which is exposed.
In an embodiment, the forming the second connecting electrode may be accomplished by forming a preliminary second connecting electrode and etching the preliminary second connecting electrode with a second etchant. The first etchant may include a same material as the second etchant.
In an embodiment, the etch electrode may include copper (“Cu”), and the preliminary second connecting electrode may include silver (“Ag”) and indium tin oxide (“ITO”).
In an embodiment, the first connecting electrode may include titanium (“Ti”).
In an embodiment, the method may further include steps of forming a data line together with the voltage line, on the substrate, forming a first gate electrode together with the first connecting electrode, and forming a capping electrode on the first gate electrode. The passivation layer may expose an upper surface of the capping electrode.
In an embodiment, the etch electrode may react with a first etchant through the side surface which is exposed, the second connecting electrode may react with a second etchant, and the capping electrode may not react with the first etchant and the second etchant.
In an embodiment, the first gate electrode may include titanium, the etch electrode may include copper, and the capping electrode may include titanium.
In an embodiment, the first gate electrode may include titanium, the etch electrode may include copper, and the capping electrode may include indium tin oxide.
In an embodiment, the method may further include a step of forming an emission layer to be cut off by the undercut shape.
In an embodiment, a first angle at which the emission layer is deposited may be greater than a second angle at which the common electrode is deposited.
Therefore, a display device according to embodiments of the present disclosure may include a voltage line, a first connecting electrode, a second connecting electrode, and the common electrode. The common electrode may be electrically connected to the voltage line through at least one of the first connecting electrode and the second connecting electrode. Accordingly, a voltage drop of the common voltage provided to the common electrode may be prevented.
In addition, an undercut shape in which the first connecting electrode is disposed may be formed in a passivation layer overlapping the voltage line. The undercut shape may cut off the emission layer so that the common electrode may be electrically connected to the voltage line. The undercut shape may be formed by removing an etch electrode, and the etch electrode may be etched with the same etchant for etching the pixel electrode. Accordingly, the economic efficiency of the process of forming the undercut shape may be improved.
The accompanying drawings, which are included to provide a further understanding of the present disclosure and are incorporated in and constitute a part of this specification, illustrate embodiments of the present disclosure together with the description.
Illustrative, non-limiting embodiments will be more clearly understood from the following detailed description in conjunction with the accompanying drawings.
Referring to
The lower structure LRS may include at least one light emitting diode, and may be referred to as an emission substrate. The lower structure LRS may emit light having a predetermined color.
The upper structure UPS may be disposed on the lower structure LRS. The upper structure UPS may include at least one color conversion pattern, and may be referred to as a color conversion substrate. The upper structure UPS may convert a color of light emitted from the lower structure LRS.
Referring to
The pixel PX may receive a first gate signal SC through a first gate line GL1 and may receive a second gate signal SS through a second gate line GL2. In addition, the pixel PX may receive a data voltage DATA through a data line DL and may receive an initialization voltage VINT through an initialization voltage line VTL. The data voltage DATA may be written into the pixel PX in response to the first gate signal SC, and the initialization voltage VINT may be written into the pixel PX in response to the second gate signal SS.
The data driver DDV may generate the data voltage DATA based on an output image data ODAT and a data control signal DCTRL receiving from the controller CON. For example, the data driver DDV may generate the data voltage DATA corresponding to the output image data ODAT and may output the data voltage DATA in response to the data control signal DCTRL. The data control signal DCTRL may include an output data enable signal, a horizontal start signal, and a load signal.
The gate driver GDV may generate the first and second gate signals SC and SS based on a gate control signal GCTRL. For example, each of the first gate signal SC and the second gate signal SS may include a gate-on voltage for turning on the transistor and a gate-off voltage for turning off the transistor. The gate control signal GCTRL may include a vertical start signal, a clock signal, and the like.
The controller CON (e.g., a timing controller T-CON) may receive an input image data IDAT and a control signal CTRL from an external host processor (e.g., GPU). For example, the input image data IDAT may be RGB data including red image data, green image data, and blue image data. The control signal CTRL may include a vertical synchronization signal, a horizontal synchronization signal, an input data enable signal, a master clock signal, and the like. The controller CON may generate the gate control signal GCTRL, the data control signal DCTRL, and the output image data ODAT based on the input image data IDAT and the control signal CTRL.
The voltage supply VP may provide a driving voltage ELVDD, a common voltage ELVSS, and the initialization voltage VINT to the pixel PX. The driving voltage ELVDD may be provided to the pixel PX through a driving line PL. The common voltage ELVSS may be provided to the pixel PX through a voltage line VL and a common electrode (e.g., a common electrode CTE of
Referring to
The first transistor T1 may include a first terminal, a second terminal, and a gate terminal. The first terminal may receive the driving voltage ELVDD. The second terminal may be connected to the light emitting diode LED. The gate terminal disposed between the first and second terminals may be connected to the second transistor T2. The first transistor T1 may generate a driving current based on the driving voltage ELVDD and the data voltage DATA.
The second transistor T2 may include a first terminal, a second terminal, and a gate terminal. The first terminal may receive the data voltage DATA. The second terminal may be connected to the first transistor T1. The gate terminal disposed between the first and second terminals may receive the first gate signal SC. The second transistor T2 may transmit the data voltage DATA in response to the first gate signal SC.
The third transistor T3 may include a first terminal, a second terminal, and a gate terminal. The first terminal may be connected to the first transistor T1. The second terminal may receive the initialization voltage VINT. The gate terminal disposed between the first and second terminals may receive the second gate signal SS. The third transistor T3 may transmit the initialization voltage VINT in response to the second gate signal SS.
The storage capacitor CST may include a first terminal and a second terminal. The first terminal may be connected to the gate terminal of the first transistor T1 and the second terminal of the second transistor T2. The second terminal may be connected to the first terminal of the third transistor T3 and the second terminal of the first transistor T1 and the light emitting diode LED. The storage capacitor CST may maintain the voltage level of the gate terminal of the first transistor T1 during the inactivation period of the first gate signal SC.
The light emitting diode LED may include a first terminal and a second terminal. The first terminal may be connected to the second terminal of the first transistor T1. The second terminal may receive the common voltage ELVSS. The light emitting diode LED may emit light having a luminance corresponding to the driving current. The light emitting diode LED may include an organic light emitting diode using an organic material as an emission layer, an inorganic light emitting diode using an inorganic material as an emission layer, and the like.
Referring to
The substrate SUB1 may be parallel to a plane formed in a first direction D1 (e.g., X-direction) and a second direction D2 (e.g., Y-direction) intersecting the first direction D1, and may have a thickness in a third direction D3 (e.g., Z-direction) perpendicular to the plane.
The substrate SUB1 may include a transparent or opaque material. Examples of the material that can be used as the substrate SUB1 may include glass, quartz, plastic, or the like. These may be used alone or in combination with each other.
The voltage line VL may be disposed on the substrate SUB1. In an embodiment, the voltage lineVL may extend in the second direction D2 and may be spaced apart from each other in the first direction D1. The voltage line VL may transfer the common voltage ELVSS to the common electrode CTE. The voltage line VL may prevent a voltage drop of the common voltage ELVSS.
In another embodiment, the voltage line VL may extend in the first direction D1 and may be spaced apart from each other in the second direction D2. In still another embodiment, the voltage line VL may include a first voltage line and a second voltage line disposed on the first voltage line. The first and second voltage lines may cross each other.
The common electrode CTE may be disposed on the voltage line VL. In an embodiment, the common electrode CTE may be formed of a plate electrode. The common electrode CTE may receive the common voltage ELVSS from the voltage line VL. For example, the common electrode CTE may correspond to the second terminal of the light emitting diode LED described with reference to
Referring to
In an embodiment, the lower electrode BML, the data line DL, and the voltage line VL may be disposed on the substrate SUB1. For example, the lower electrode BML, the data line DL, and the voltage line VL may be formed together with each other. In other words, the lower electrode BML, the data line DL, and the voltage line VL may be disposed in the same layer.
In an embodiment, the lower electrode BML, the data line DL, and the voltage line VL may be formed of a metal, an alloy, a conductive metal oxide, a transparent conductive material, or the like. Examples of materials that may be used as the lower electrode BML, the data line DL, and the voltage line VL may include silver (“Ag”), an alloy containing silver, molybdenum (‘Mo”), an alloy containing molybdenum, aluminum (“Al”), an alloy containing aluminum, aluminum nitride (“AlN”), tungsten (“W”), tungsten nitride (“WN”), copper (“Cu”), nickel (“Ni”), chromium (“Cr”), chromium nitride (“CrN”), titanium (“Ti”), tantalum (“Ta”), platinum (“Pt”), scandium (“Sc”), indium tin oxide (“ITO”), indium zinc oxide (“IZO”), or the like. These may be used alone or in combination with each other. In addition, each of the lower electrode BML, the data line DL, and the voltage line VL may be formed of a single layer or a multilayer.
In an embodiment, the driving voltage ELVDD may be provided to the lower electrode BML, the data voltage DATA may be provided to the data line DL, and the common voltage ELVSS may be provided to the voltage line VL.
The buffer layer BFR may be disposed on the lower electrode BML, the data line DL, and the voltage line VL. In an embodiment, the buffer layer BFR may be formed of an insulating material. Examples of the insulating material that can be used as the buffer layer BFR may include silicon oxide, silicon nitride, silicon oxynitride, and the like. These may be used alone or in combination with each other. In addition, the buffer layer BFR may be formed of a single layer or a multilayer.
The first active pattern ACT1 and the second active pattern ACT2 may be disposed on the buffer layer BFR. For example, the first active pattern ACT1 and the second active pattern ACT2 may be formed together with each other.
In an embodiment, the first active pattern ACT1 and the second active pattern ACT2 may be formed of a silicon semiconductor material or an oxide semiconductor material. Examples of the silicon semiconductor material that may be used as the first active pattern ACT1 and the second active pattern ACT2 may include amorphous silicon and polycrystalline silicon. Examples of the oxide semiconductor material that may be used as the first active pattern ACT1 and the second active pattern ACT2 may include IGZO (InGaZnO) and ITZO (InSnZnO). In addition, the oxide semiconductor material may further include indium (“In”), gallium (“Ga”), tin (“Sn”), zirconium (“Zr”), vanadium (“V”), hafnium (“Hf”), cadmium (“Cd”), germanium (“Ge”), chromium (“Cr”), titanium (“Ti”), and zinc (“Zn”). These may be used alone or in combination with each other.
In an embodiment, the first active pattern ACT1 may be disposed on and overlap the lower electrode BML and may be electrically connected to the lower electrode BML by the first connecting line CL1. For example, the first active pattern ACT1 may correspond to the first terminal and the second terminal of the first transistor T1.
In an embodiment, the second active pattern ACT2 may be electrically connected to the data line DL by the second connecting line CL2. For example, the second active pattern ACT2 may correspond to the first terminal and the second terminal of the second transistor T2.
The gate insulating pattern GI may be directly disposed on the first active pattern ACT1, the second active pattern ACT2, and the buffer layer BFR. In an embodiment, the gate insulating pattern GI may be formed of an insulating material. Examples of the insulating material that can be used as the gate insulating pattern GI may include silicon oxide, silicon nitride, silicon oxynitride, and the like. These may be used alone or in combination with each other. In addition, the gate insulating pattern GI may be formed of a single layer or a multilayer.
Each of the first gate electrode GAT1, the third gate electrode GAT3, and the first connecting electrode CE1 may be disposed on the gate insulating pattern GI. For example, the first gate electrode GAT1, the third gate electrode GAT3, and the first connecting electrode CE1 may be formed together with each other. In other words, the first gate electrode GAT1, the third gate electrode GAT3, and the first connecting electrode CE1 may be disposed in a same layer.
In an embodiment, each of the first gate electrode GAT1, the third gate electrode GAT3, and the first connecting electrode CE1 may be formed of a metal, an alloy, a conductive metal oxide, a transparent conductive material, or the like. Examples of materials that can be used as the first gate electrode GAT1, the third gate electrode GAT3, and the first connecting electrode CE1 may include silver (“Ag”), an alloy containing silver, molybdenum (“Mo”), an alloy containing molybdenum, aluminum (“Al”), an alloy containing aluminum, aluminum nitride (“AlN”), tungsten (“W”), tungsten nitride (“WN”), copper (“Cu”), nickel (“Ni”), chromium (“Cr”), chromium nitride (“CrN”), titanium (“Ti”), tantalum (“Ta”), platinum (“Pt”), scandium (“Sc”), indium tin oxide (“ITO”), indium zinc oxide (“IZO”), or the like. For example, the first gate electrode GAT1, the third gate electrode GAT3, and the first connecting electrode CE1 may be formed of titanium (“Ti”).
The first gate electrode GAT1 may overlap the lower electrode BML and the first active pattern ACT1. The third gate electrode GAT3 may overlap the second active pattern ACT2.
The first connecting electrode CE1 may be electrically connected to the voltage line VL. In another embodiment, the first connecting electrode CE1 may overlap the voltage line VL and may not contact the voltage line VL. In still another embodiment, the first connecting electrode CE1 may not overlap the voltage line VL.
The second gate electrode GAT2 may be disposed on the first gate electrode GAT1, and the fourth gate electrode GAT4 may be disposed on the third gate electrode GAT3. For example, the second gate electrode GAT2 and the fourth gate electrode GAT4 may be formed together with each other. In other words, the second gate electrode GAT2 and the fourth gate electrode GAT4 may be disposed in the same layer.
In an embodiment, the second gate electrode GAT2 and the fourth gate electrode u) GAT4 may be formed of a metal, an alloy, a conductive metal oxide, a transparent conductive material, or the like. Examples of materials that can be used as the second gate electrode GAT2 and the fourth gate electrode GAT4 may include silver (“Ag”), an alloy containing silver, molybdenum (“Mo”), an alloy containing molybdenum, aluminum (“Al”), an alloy containing aluminum, aluminum nitride (“AlN”), tungsten (“W”), tungsten nitride (“WN”), copper (“Cu”), nickel (“Ni”), chromium (“Cr”), chromium nitride (“CrN”), titanium (“Ti”), tantalum (“Ta”), platinum (“Pt”), scandium (“Sc”), indium tin oxide (“ITO”), indium zinc oxide (“IZO”), or the like. For example, the second gate electrode GAT2 and the fourth gate electrode GAT4 may be formed of copper (“Cu”).
The first capping electrode CPE1 may be disposed on the second gate electrode GAT2, and the second capping electrode CPE2 may be disposed on the fourth gate electrode GAT4. For example, the first capping electrode CPE1 and the second capping electrode CPE2 may be formed together with each other. In other words, the first capping electrode CPE1 and the second capping electrode CPE2 may be disposed in the same layer.
In an embodiment, the first capping electrode CPE1 and the second capping electrode CPE2 may be formed of a metal, an alloy, a conductive metal oxide, a transparent conductive material, or the like. Examples of materials that can be used as the first capping electrode CPE1 and the second capping electrode CPE2 may include silver (“Ag”), an alloy containing silver, molybdenum (“Mo”), an alloy containing molybdenum, aluminum (“Al”), an alloy containing aluminum, aluminum nitride (“AlN”), tungsten (“W”), tungsten nitride (“WN”), copper (“Cu”), nickel (“Ni”), chromium (“Cr”), chromium nitride (“CrN”), titanium (“Ti”), tantalum (“Ta”), platinum (“Pt”), scandium (“Sc”), indium tin oxide (“ITO”), indium zinc oxide (“IZO”), or the like.
In an embodiment, each of the first capping electrode CPE1 and the second capping electrode CPE2 may have a Ti/Cu structure. In another embodiment, each of the first capping electrode CPE1 and the second capping electrode CPE2 may be formed of indium tin oxide (ITO).
The first capping electrode CPE1 may overlap the lower electrode BML and the first active pattern ACT1, and may contact the second gate electrode GAT2. The second capping electrode CPE2 may overlap the second active pattern ACT2 and may contact the fourth gate electrode GAT4.
In an embodiment, the first gate electrode GAT1, the second gate electrode GAT2, and the first capping electrode CPE1 may constitute a gate electrode GAT. In other words, the gate electrode GAT may have a multilayer structure.
The passivation layer PVX may be disposed on the buffer layer BFR. The passivation layer PVX may cover the first gate electrode GAT1, the second gate electrode GAT2, and the first capping electrode CPE1, and may cover the third gate electrode GAT3, the fourth gate electrode GAT4, and the second capping electrode CPE2.
In an embodiment, the passivation layer PVX may have an undercut shape UC overlapping the first connecting electrode CE1. In other words, the undercut shape UC may be formed on the passivation layer PVX, and the first connecting electrode CE1 may be disposed inside the undercut shape UC. Accordingly, an upper surface of the first connecting electrode CE1 and the passivation layer PVX may not contact each other. In addition, although not shown, an organic material may be filled between the upper surface of the first connecting electrode CE1 and the passivation layer PVX.
In an embodiment, the passivation layer PVX may be formed of an insulating material. Examples of the insulating material that can be used as the passivation layer PVX may include silicon oxide, silicon nitride, silicon oxynitride, and the like. These may be used alone or in combination with each other. In addition, the passivation layer PVX may be formed of a single layer or a multilayer.
The via insulating layer VIA may be disposed on the passivation layer PVX. In an embodiment, the via insulating layer VIA may be formed of an insulating material. Examples of the insulating material that may be used as the via insulating layer VIA may include photoresist, polyacrylic resin, polyimide resin, acrylic resin, and the like. These may be used alone or in combination with each other.
The pixel electrode PE, the first connecting line CL1, and the second connecting line CL2 may be disposed on the via insulating layer VIA. The second connecting electrode CE2 may be disposed on the via insulating layer VIA and may be cut off by the undercut shape UC. For example, the pixel electrode PE, the first connecting line CL1, the second connecting line CL2, and the second connecting electrode CE2 may be formed together with each other.
In an embodiment, the pixel electrode PE, the first connecting line CL1, the second connecting line CL2, and the second connecting electrode CE2 may include a metal, an alloy, a conductive metal oxide, and a transparent conductive material. Examples of materials that may be used as the pixel electrode PE, the first connecting line CL1, the second connecting line CL2, and the second connecting electrode CE2 may include silver (“Ag”), an alloy containing silver, molybdenum (“Mo”), an alloy containing molybdenum, aluminum (“Al”), an alloy containing aluminum, aluminum nitride (“AlN”), tungsten (“W”), tungsten nitride (“WN”), copper (“Cu”), nickel (“Ni”), chromium (“Cr”), chromium nitride (“CrN”), titanium (“Ti”), tantalum (“Ta”), platinum (“Pt”), scandium (“Sc”), indium tin oxide (“ITO”), indium zinc oxide (“IZO”) etc. For example, each of the pixel electrode PE, the first connecting line CL1, the second connecting line CL2, and the second connecting electrode CE2 may have an ITO/Ag/ITO structure.
In an embodiment, the pixel electrode PE may contact the lower electrode BML and the first active pattern ACT1. The pixel electrode PE may electrically connect the lower electrode BML through a contact hole penetrating the passivation layer PVX and the buffer layer BFR and the first active pattern ACT1 through a contact hole penetrating the passivation layer PVX. In addition, the pixel electrode PE may correspond to the first terminal of the light emitting diode LED.
In an embodiment, the first connecting line CL1 may contact the first capping electrode CPE1 and the second active pattern ACT2. The first connecting line CL1 may electrically connect the first capping electrode CPE1 and the second active pattern ACT2 to each other.
In an embodiment, the second connecting line CL2 may contact the data line DL and the second active pattern ACT2 through contact holes penetrating the passivation layer PVX. The second connecting line CL2 may electrically connect the data line DL through a contact hole penetrating the passivation layer PVX and the buffer layer BFR to the second active pattern ACT2 through a contact hole penetrating the passivation layer PVX.
In an embodiment, the second connecting electrode CE2 may be cut off by the undercut shape UC. In addition, the second connecting electrode CE2 may contact the voltage line VL and the first connecting electrode CE1. Accordingly, the second connecting electrode CE2 may electrically connect the voltage line VL and the first connecting electrode CE1.
The pixel defining layer PDL may be disposed on the via insulating layer VIA. In an embodiment, the pixel defining layer PDL may be formed of an insulating material. Examples of the insulating material that can be used as the pixel defining layer PDL may include photoresist, polyacrylic resin, polyimide resin, acrylic resin, and the like. These may be used alone or in combination with each other. In an embodiment, a first opening exposing an upper surface of the pixel electrode PE and a second opening overlapping the second connecting electrode CE2 may be formed in the pixel defining layer PDL.
The emission layer EL may be disposed on the pixel electrode PE, the pixel defining layer PDL, and the second connecting electrode CE2. In other words, the emission layer EL may be formed on the entire surface of the lower structure LRS. In addition, in an embodiment, the emission layer EL may be cut off by the undercut shape UC.
The common electrode CTE may be disposed on the emission layer EL. In an embodiment, the common electrode CTE may be formed of a metal, an alloy, a conductive metal oxide, a transparent conductive material, or the like. Examples of the material that can be used as the common electrode CTE may include silver (“Ag”), an alloy containing silver, molybdenum (“Mo”), an alloy containing molybdenum, aluminum (“Al”), an alloy containing aluminum, aluminum nitride (“AlN”), tungsten (“W”), tungsten nitride (“WN”), copper (“Cu”), nickel (“Ni”), chromium (“Cr”), chromium nitride (“CrN”), titanium (“Ti”), tantalum (“Ta”), platinum (“Pt”), scandium (“Sc”), indium tin oxide (“ITO”), indium zinc oxide (“IZO”), and the like. These may be used alone or in combination with each other. In addition, the common electrode CTE may be formed of a single layer or a multilayer.
In an embodiment, the common electrode CTE may be cut off by the undercut shape UC. Accordingly, the emission layer EL may be disposed between the second connecting electrode CE2 and the common electrode CTE. In addition, in an embodiment, the common electrode CTE may cover a side surface of the emission layer EL.
In an embodiment, the first connecting electrode CE1, the second connecting electrode CE2, and the common electrode CTE may be formed inside the undercut shape UC. In addition, the common electrode CTE may contact the first connecting electrode CE1 and the second connecting electrode CE2. Accordingly, the common electrode CTE may be electrically connected to the voltage line VL. In this case, the common electrode CTE may not directly contact the voltage line VL.
Referring to
The upper substrate SUB2 may include a transparent or opaque material. Examples of the material that can be used as the upper substrate SUB2 may include glass, quartz, plastic, or the like. These may be used alone or in combination with each other.
The first color filter CF1, the second color filter CF2, and the third color filter CF3 may be disposed under the upper substrate SUB2. In an embodiment, the first color filter CF1 may transmit light having a wavelength corresponding to red light, the second color filter CF2 may transmit light having a wavelength corresponding to green light, and the third color filter CF3 may transmit light having a wavelength corresponding to blue light. An overlapped area between the first color filter CF1, the second color filter CF2, and the third color filter CF3 may function as a light blocking layer. That is, the overlapped portion may overlap the color conversion capping layer QDC in the third direction D3.
The refractive layer LR may be disposed under the first to third color filters CF1, CF2, and CF3. The refractive layer LR may have a predetermined refractive index. Accordingly, the light efficiency of the display device DD may be improved. In another embodiment, the refractive layer LR may be disposed under the first to third color conversion patterns CVL1, CVL2, and CVL3. In still another embodiment, the refractive layer LR may include first and second refractive layers, the first refractive layer may be disposed on the first to third color conversion patterns CVL1, CVL2, and CVL3, and the second refractive layer may be disposed under the first to third color conversion patterns CVL1, CVL2, and CVL3.
The refractive capping layer LRC may be disposed under the refractive layer LR. The refractive capping layer LRC may protect the refractive layer LR. In another embodiment, a refractive capping layer may be disposed on the refractive layer LR. In still another embodiment, a first refractive capping layer may be disposed under the refractive layer LR, and a refractive second capping layer may be disposed on the refractive layer LR.
The bank layer BK may be disposed under the refractive capping layer LRC. The bank layer BK may be formed of a light blocking material and may block light emitted from the lower portion. In addition, an opening exposing the refractive capping layer LRC may be formed in the bank layer BK.
The first color conversion pattern CVL1 may be disposed under the first color filter CF1 and may overlap a first pixel electrode. The first color conversion pattern CVL1 may convert a wavelength of light emitted from the emission layer EL. For example, the first color conversion pattern CVL1 may include a phosphor, a scatterer, or quantum dots. As the light emitted from the emission layer EL passes through the first color conversion pattern CVL1, red light may be emitted.
The second color conversion pattern CVL2 may be disposed under the second color filter CF2 and may overlap a second pixel electrode. The second color conversion pattern CVL2 may convert a wavelength of light emitted from the emission layer EL. For example, the second color conversion pattern CVL2 may include a phosphor, a scatterer, or quantum dots. As light emitted from the emission layer EL passes through the second color conversion pattern CVL2, green light may be emitted.
The third color conversion pattern CVL3 may be disposed under the third color filter CF3 and may overlap a third pixel electrode. The third color conversion pattern CVL3 may scatter a wavelength of light emitted from the emission layer EL. For example, the third color conversion pattern CVL3 may include a phosphor, a scatterer, or quantum dots. As the light emitted from the emission layer EL passes through the third color conversion pattern CVL3, blue light may be emitted.
In an embodiment, each of the first to third color conversion patterns CVL1, CVL2, and CVL3 may have a concave cross-sectional shape.
The color conversion capping layer QDC may be disposed under the first to third color conversion patterns CVL1, CVL2, and CVL3. The color conversion capping layer QDC may protect the first to third color conversion patterns CVL1, CVL2, and CVL3.
Referring to
A gate insulating layer may be formed on the first active pattern ACT1 and the second active pattern ACT2, and a gate electrode layer may be formed on the gate insulating layer. Then, the first gate electrode GAT1, the second gate electrode GAT2, the first capping electrode CPE1, the third gate electrode GAT3, the fourth gate electrode GAT4, the second capping electrode CPE2, the first connecting electrode CE1, an etch electrode ECE, and a third capping electrode CPE3 can be formed by patterning the gate insulating layer and the gate electrode layer together, the gate insulating pattern GI.
In detail, the first gate electrode GAT1, the third gate electrode GAT3, and the first connecting electrode CE1 may be formed of the same material. In an embodiment, the first gate electrode GAT1, the third gate electrode GAT3, and the first connecting electrode CE1 may be formed of titanium (“Ti”).
The second gate electrode GAT2, the fourth gate electrode GAT4, and the etch electrode ECE may be formed together of the same material. In an embodiment, the second gate electrode GAT2, the fourth gate electrode GAT4, and the etch electrode ECE may be formed of copper (“Cu”).
The first capping electrode CPE1, the second capping electrode CPE2, and the third capping electrode CPE3 may be formed of the same material. In an embodiment, each of the first capping electrode CPE1, the second capping electrode CPE2, and the third capping electrode CPE3 may have a Ti/Cu structure. In another embodiment, each of the first capping electrode CPE1, the second capping electrode CPE2, and the third capping electrode CPE3 may be formed of ITO.
However, a metal forming the first gate electrode GAT1, the second gate electrode GAT2, the first capping electrode CPE1, the third gate electrode GAT3, the fourth gate electrode GAT4, the second capping electrode CPE2, the first connecting electrode CE1, the etch electrode ECE, and the third capping electrode CPE3 is not limited thereto. The metal may be variously selected in consideration of hardness, electrical conductivity, etch selectivity, and the like.
Referring to
The via insulating layer VIA may be disposed on the preliminary passivation layer PVX′. Via contact holes VCNT may be formed in the via insulating layer VIA. The via contact holes VCNT may pass through the via insulating layer VIA. In an embodiment, the via contact holes VCNT may include a first via contact hole VCNT1 overlapping the first capping electrode CPE1 and a second via contact hole VCNT2 overlapping the third capping electrode CPE3. The first via contact hole VCNT1 may expose the preliminary passivation layer PVX′ overlapping the first capping electrode CPE1, and the second via contact hole VCNT2 may expose the preliminary passivation layer PVX′ overlapping the third capping electrode CPE3.
Referring to
Referring to
In detail, as shown in
Meanwhile, as shown in
In other words, the first etchant ECT1 may be an etchant that does not react with the first capping electrode CPE1, and the third capping electrode CPE3 and may react with the etching electrode ECE.
Referring to
Referring to
In an embodiment, the second etchant ECT2 may include the same material as the first etchant ECT1. In other words, the etch electrode ECE and the second connecting electrode CE2 may be formed of a metal reacting with the same etchant. For example, the etch electrode ECE may be formed of copper (“Cu”), and the second connecting electrode CE2 may include silver (“Ag”) and indium tin oxide (“ITO”). In addition, the first connecting electrode CE1 may not react with the first etchant ECT1 and the second etchant ECT2. Accordingly, the first connecting electrode CE1 may remain inside the undercut shape UC.
In another embodiment, the second etchant ECT2 may include a material different from that of the first etchant ECT1. In other words, the etch electrode ECE and the second connecting electrode CE2 may react with different etchants.
Referring to
As shown in
Referring to
As shown in
The display device DD may include the voltage line VL, the first connecting electrode CE1, the second connecting electrode CE2, and the common electrode CTE. The common electrode CTE may be electrically connected to the voltage line VL through at least one of the first connecting electrode CE1 and the second connecting electrode CE2. Accordingly, a voltage drop of the common voltage ELVSS provided to the common electrode CTE may be prevented.
In addition, the undercut shape UC in which the first connecting electrode CE1 is disposed may be formed on the passivation layer PVX overlapping the voltage line VL. The undercut shape UC may be formed by removing the etch electrode ECE, and the etch electrode ECE may be etched with the same etchant that etches the pixel electrode PE. Accordingly, the economic efficiency of the process of forming the undercut shape UC may be improved.
Referring to
Referring to
The common electrode CTE′ may be formed on the emission layer EL′. The common electrode CTE′ may be formed on the entire surface of the lower structure LRS and may be cut off by the undercut shape UC. Inside the undercut shape UC, the common electrode CTE′ may contact the upper surface of the emission layer EL′, the side surface of the emission layer EL′, and the upper surface of the first connecting electrode CE1.
Although certain embodiments and implementations have been described herein, other embodiments and modifications will be apparent from this description. Accordingly, the present disclosure is not limited to such embodiments, but rather to the broader scope of the appended claims and various obvious modifications and equivalent arrangements as would be apparent to a person of ordinary skill in the art.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2022-0027808 | Mar 2022 | KR | national |
