The disclosure relates to a display device and a method of manufacturing the same.
In recent years, organic EL display devices, which use organic electroluminescence (EL) elements and are of the self-luminous type, have attracted attention as display devices that can replace liquid crystal display devices. For the organic EL display device, a seal structure is proposed to inhibit the degradation of the organic EL element due to the penetration of, for example, moisture and oxygen. The seal structure includes a sealing film covering the organic EL element, and the sealing film includes a stack of an inorganic film and an organic film.
For example, PTL 1 discloses a display device including a thin film sealing layer. The thin film sealing layer has a layered structure in which an inorganic film layer formed through CVD (chemical vapor deposition) or the like, and an organic film layer formed through an ink-jet method or the like, are arranged in an alternating manner, and the thin film sealing layer covers an organic light emitting element.
PTL 1: JP 2014-86415 A
When an organic film constituting a sealing film is formed through an ink-jet method, as with the display device disclosed in the aforementioned PTL 1, droplets that will become the organic film may spread to the periphery in a non-uniform manner due to the wettability of the surface onto which the droplets are ejected with respect to the organic film. When such non-uniformity occurs, there is a risk that after the droplets harden, flaws will be present in the organic film in areas where the droplets were insufficient.
Having been conceived in light of the foregoing point, an object of the disclosure is to suppress the occurrence of flaws in an organic film, which arise due to insufficient droplets of an organic material that will become the organic film, in a sealing film formed by layering a first inorganic film, the organic film, and a second inorganic film.
To achieve the above-described object, a display device according to the disclosure includes: a base substrate in which a display region in which an image is displayed and a frame region located in the periphery of the display region are defined; a light emitting element provided in the display region of the base substrate; and a sealing film in which a first inorganic film, an organic film, and a second inorganic film are layered in that order, the sealing film being provided in the display region and the frame region, the sealing film covering the light emitting element, wherein a high-wettability region having a relatively high wettability with respect to droplets configured to become the organic film, and a low-wettability region having a relatively low wettability with respect to the droplets, are arranged in an alternating manner on an organic film side surface of the first inorganic film.
According to the disclosure, the high-wettability region having a relatively high wettability with respect to the droplets that will become the organic film, and the low-wettability region having a relatively low wettability with respect to the droplets, are arranged in an alternating manner on the organic film side surface of the first inorganic film. Accordingly, in a sealing film in which the first inorganic film, the organic film, and the second inorganic film are layered, a situation in which flaws occur in the organic film due to the droplets of an organic material that will become the organic layer being insufficient can be suppressed.
Embodiments of the disclosure will be described in detail below with reference to the drawings. The disclosure is not limited to the embodiments described below.
As illustrated in
The base substrate 10 is a plastic substrate formed from a polyimide resin, for example, a glass substrate, or the like.
The base coating film 11 is an inorganic insulating film such as a silicon oxide film or a silicon nitride film, for example.
As illustrated in
The TFT 12 is a switching element provided for each of the subpixels in the display region D. Here, the TFTs 12 each include, for example, semiconductor layer, a gate insulating film, a gate electrode, an interlayer insulating film, and source and drain electrodes. The semiconductor layer is provided on the base coating film 11 in an island shape. The gate insulating film is provided covering the semiconductor layer. The gate electrode is provided on the gate insulating film so as to overlap with a part of the semiconductor layer. The interlayer insulating film is provided covering the gate electrode. The source and drain electrodes are arranged separated from each other. In the present embodiment, the top-gate type is described as an example of the TFT 12, but the TFT 12 may be of the bottom-gate type.
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The hole injection layer 1 is also referred to as an anode buffer layer, and functions to reduce the energy level difference between the first electrode 14 and the organic EL layer 16 so as to improve the efficiency of hole injection into the organic EL layer 16 from the first electrode 14. Examples of materials that may constitute the hole injection layer 1 include triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, phenylenediamine derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, and stilbene derivatives.
The hole transport layer 2 functions to improve the efficiency of hole transport from the first electrode 14 to the organic EL layer 16. Examples of materials that may constitute the hole transport layer 2 include porphyrin derivatives, aromatic tertiary amine compounds, styrylamine derivatives, polyvinylcarbazole, poly-p-phenylenevinylene, polysilane, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amine-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, hydrogenated amorphous silicon, hydrogenated amorphous silicon carbide, zinc sulfide, and zinc selenide.
The light-emitting layer 3 is a region where, when a voltage is applied via the first electrode 14 and the second electrode 17, holes and electrons are injected from the first electrode 14 and the second electrode 17, respectively, and the holes and the electrons recombine. Here, the light-emitting layer 3 is formed from a material having a high light emitting efficiency. Examples of materials that may constitute the light-emitting layer 3 include metal oxinoid compounds (8-hydroxyquinoline metal complexes), naphthalene derivatives, anthracene derivatives, diphenyl ethylene derivatives, vinyl acetone derivatives, triphenylamine derivatives, butadiene derivatives, coumarin derivatives, benzoxazole derivatives, oxadiazole derivatives, oxazole derivatives, benzimidazole derivatives, thiadiazole derivatives, benzothiazole derivatives, styryl derivatives, styrylamine derivatives, bisstyrylbenzene derivatives, trisstyrylbenzene derivatives, perylene derivatives, perinone derivatives, aminopyrene derivatives, pyridine derivatives, rhodamine derivatives, aquidine derivatives, phenoxazone, quinacridone derivatives, rubrene, poly-p-phenylenevinylene, and polysilane.
The electron transport layer 4 functions to facilitate the efficient migration of the electrons to the light-emitting layer 3. Examples of materials that may constitute the electron transport layer 4 include organic compounds, the examples of which include oxadiazole derivatives, triazole derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, tetracyanoanthraquinodimethane derivatives, diphenoquinone derivatives, fluorenone derivatives, silole derivatives, and metal oxinoid compounds.
The electron injection layer 5 functions to reduce the energy level difference between the second electrode 17 and the organic EL layer 16, to improve the efficiency of electron injection into the organic EL layer 16 from the second electrode 17. Because of this function, the driving voltage for the organic EL element 18 can be reduced. The electron injection layer 5 is also referred to as a cathode buffer layer. Examples of materials that may constitute the electron injection layer 5 include inorganic alkaline compounds, such as lithium fluoride (LiF), magnesium fluoride (MgF2), calcium fluoride (CaF2), strontium fluoride (SrF2), and barium fluoride (BaF2); aluminum oxide (Al2O3); and strontium oxide (SrO).
As illustrated in
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The first inorganic film 19a is composed of an inorganic insulating film such as a silicon nitride film, for example. As illustrated in
The organic film 20a is composed of an organic resin material such as an acrylate, epoxy, silicone, polyurea, parylene, polyimide, polyamide, or the like, for example.
The second inorganic film 21a is composed of an inorganic insulating film such as a silicon nitride film, a silicon oxide film, a silicon oxynitride film, or the like, for example.
The organic EL display device 30a configured as described above is flexible. In each of the subpixels, the light-emitting layer 3 of the organic EL layer 16 is caused, via the TFT 12, to emit light as appropriate so as to display images.
A method of manufacturing the organic EL display device 30a according to the present embodiment will be described next. Note that the method of manufacturing the organic EL display device 30a according to the present embodiment includes forming an organic EL element and forming a sealing film.
Using a known method, the base coating film 11, the organic EL element 18 (the TFTs 12, the flattening film 13, the first electrodes 14, the partitions 15, the organic EL layers 16 (the hole injection layer 1, the hole transport layer 2, the light-emitting layer 3, the electron transport layer 4, and the electron injection layer 5), the second electrode 17), and the damming wall 15a are formed on the surface of the base substrate 10, which is made from a polyimide resin, for example.
First, for example, an inorganic insulating film such as a silicon nitride film is formed through plasma CVD at a thickness of approximately several tens of nm to several μm, so as to cover the organic EL element 18 formed in the above-described formation of the organic EL element. Then, as illustrated in
Next, the organic film 20a is formed by using an ink-jet method to eject an organic resin material such as an acrylate, at a thickness of approximately several μm to several tens of μm, onto the entire surface of the substrate on which the first inorganic film 19a has been formed (a process of forming an organic film). Here, if the droplets L of the organic resin material are ejected onto the substrate surface on which the first inorganic film 19a is formed using an ink-jet method, the droplets L spread easily along the high-wettability regions Ra in the vertical direction of the drawing in
Furthermore, the second inorganic film 21a is formed by depositing an inorganic insulating film, such as a silicon nitride film, through plasma CVD at a thickness of approximately several tens of nm to several μm, onto the substrate on which the organic film 20a has been formed. As a result, the sealing film 22a composed of the first inorganic film 19a, the organic film 20a, and the second inorganic film 21a is formed (a process of forming a second inorganic film).
The present embodiment describes a method of forming the high-wettability regions Ra by irradiating the surface of an inorganic insulating film such as a silicon nitride film with ultraviolet light U as an example. However, as illustrated in
The organic EL display device 30a of the present embodiment can be manufactured in this manner.
As described thus far, according to the organic EL display device 30a and the method of manufacturing the same of the present embodiment, in the sealing film 22a, the high-wettability regions Ra having a relatively high wettability with respect to the droplets L of the organic resin material that will become the organic film 20a, and the low-wettability regions Rb having a relatively low wettability with respect to the droplets L, are arranged on the organic film 20a side surface of the first inorganic film 19a, with the high-wettability regions Ra and the low-wettability regions Rb being arranged in an alternating manner. Here, when the droplets L are applied using a typical ink-jet method, the pitch of the droplets L in the direction orthogonal to the application direction H is wider than the pitch of the droplets L in the application direction H. Accordingly, arranging the high-wettability regions Ra and the low-wettability regions Rb in an alternating manner along the application direction H in which the droplets L are applied through the ink-jet method makes it easier for droplets L separated in the direction orthogonal to the application direction H to merge with each other. As such, an organic film 20a that suppresses the occurrence of flaws caused by the droplets L being insufficient can be formed. This in turn makes it possible to suppress the occurrence of flaws in the organic film 20a caused by the droplets L of the organic material that will become the organic film 20a being insufficient, in the sealing film 22a formed by layering the first inorganic film 19a, the organic film 20a, and the second inorganic film 21a.
Additionally, according to the organic EL display device 30a and the method of manufacturing the same of the present embodiment, the high-wettability regions Ra are formed by irradiation with ultraviolet light U. This makes it possible to manufacture the organic EL display device 30a including the organic film 20a, in which the occurrence of flaws caused by insufficient droplets L is suppressed, while suppressing manufacturing costs.
The foregoing first embodiment describes the organic EL display device 30a, in which the wettability of the first inorganic film 19a with respect to the droplets L is controlled in the display region D, as an example. The present embodiment, however, will describe the organic EL display device 30b, in which the wettability of the first inorganic film 19b with respect to the droplets L is controlled in the display region D and the frame region F, as an example.
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The first inorganic film 19b is composed of an inorganic insulating film such as a silicon nitride film, for example. As illustrated in
The organic film 20b is composed of an organic resin material such as an acrylate, epoxy, silicone, polyurea, parylene, polyimide, polyamide, or the like, for example. As described above, the surface of the first inorganic film 19b overlapping with the damming wall 15a is not irradiated with the ultraviolet light U, and thus has a lower wettability than the high-wettability regions Ra within the display region D, in the same manner as the low-wettability regions Rb within the display region D. Therefore, as illustrated in
The second inorganic film 21b is composed of an inorganic insulating film such as a silicon nitride film, a silicon oxide film, a silicon oxynitride film, or the like, for example.
The above-described organic EL display device 30b is flexible. In each of the subpixels, the light-emitting layer 3 of the organic EL layer 16 is caused, via the TFT 12, to emit light as appropriate so as to display images.
The present embodiment describes a method of irradiating the surface of the first inorganic film 19b with the ultraviolet light U to give that surface a relatively low wettability as an example. However, as illustrated in
The organic EL display device 30b can be manufactured by, for example, changing the region irradiated with the ultraviolet light U in the method of manufacturing the organic EL display device 30a described above in the first embodiment.
As described thus far, according to the organic EL display device 30b and the method of manufacturing the same of the present embodiment, in the sealing film 22b, the high-wettability regions Ra having a relatively high wettability with respect to the droplets L of the organic resin material that will become the organic film 20b, and the low-wettability regions Rb having a relatively low wettability with respect to the droplets L, are arranged on the organic film 20b side surface of the first inorganic film 19b, with the high-wettability regions Ra and the low-wettability regions Rb being arranged in an alternating manner. Here, when the droplets L are applied using a typical ink-jet method, the pitch of the droplets L in the direction orthogonal to the application direction H is wider than the pitch of the droplets L in the application direction H. Accordingly, arranging the high-wettability regions Ra and the low-wettability regions Rb in an alternating manner along the direction H in which the droplets L are applied through the ink-jet method makes it easier for droplets L separated in the direction orthogonal to the application direction H to merge with each other. As a result, an organic film 20b that suppresses the occurrence of flaws caused by the droplets L being insufficient can be formed. This in turn makes it possible to suppress the occurrence of flaws in the organic film 20b caused by the droplets L being insufficient, of the organic material that will become the organic film 20b, in the sealing film 22b formed by layering the first inorganic film 19b, the organic film 20b, and the second inorganic film 21b.
Additionally, according to the organic EL display device 30b and the method of manufacturing the same of the present embodiment, the high-wettability regions Ra are formed by irradiation with ultraviolet light U. This makes it possible to manufacture the organic EL display device 30b including the organic film 20b, in which the occurrence of flaws caused by insufficient droplets L is suppressed, while suppressing manufacturing costs.
Furthermore, according to the organic EL display device 30b and the method of manufacturing the same of the present embodiment, the surface of the first inorganic film 19b provided above a damming wall 15b has a lower wettability with respect to the droplets L that will become the organic film 20b than the surface of the first inorganic film 19b provided in the high-wettability regions Ra of the display region D. As such, the circumferential end parts of the organic film 20b have a steep incline. Accordingly, a situation in which the circumferential end parts of the organic film 20b broaden in the frame region F can be suppressed, which makes it possible to narrow the width of the frame region F.
The foregoing embodiments describe an organic EL display device as an example of a display device. However, the disclosure can be applied in any display device including a plurality of light emitting elements driven by current, such as a display device including quantum dot light emitting diodes (QLEDs), which are light emitting elements using a quantum dot-containing layer.
In the embodiments described above, the example of the organic EL layer including the five-layer structure including the hole injection layer, the hole transport layer, the light-emitting layer, the electron transport layer, and the electron injection layer is given. It is also possible that, for example, the organic EL layer may include a three-layer structure including a hole injection-cum-transport layer, a light-emitting layer, and an electron transport-cum-injection layer.
In the embodiments described above, the example of the organic EL display devices including the first electrode as an anode and the second electrode as a cathode. However, the disclosure is also applicable to an organic EL display device, in which the layers of the structure of the organic EL layer are in reverse order, with the first electrode being a cathode and the second electrode being an anode.
The foregoing embodiments describe an organic EL display device in which the electrode of the TFT connected to the first electrode is the drain electrode. However, the disclosure can also be applied in an organic EL display device in which the electrode of the TFT connected to the first electrode is referred to as the source electrode.
As described above, the disclosure is applicable in flexible display devices.
Filing Document | Filing Date | Country | Kind |
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PCT/JP2017/035181 | 9/28/2017 | WO | 00 |