Patent Application
20200274097
The present invention relates to a display device and the like.
Heretofore, various display devices, such as flat panel displays, are known (for example, refer to PTL 1). In general, display devices are formed by layering layers having various functions.
PTL 1: JP 2015-22914 A (published on Feb. 2, 2015)
In recent years, it is desired to increase the screen size of display devices and also to provide high-definition images. To achieve this, constituent elements of display devices are more and more miniaturized.
In a manufacturing process of a display device, a photolithography method is employed for fine processing. In the photolithography method, irradiation of a photosensitive resin with light is controlled using a photomask.
In a case where the screen size of a product to be manufactured is larger than a photomask, the photolithography method is used for a substrate having a larger size than that of the photomask. In this case, it is necessary to perform a step of disposing the photomask and then radiating light, several times.
However, in a case where the above-described step is performed several times, a surface of a resulting product in portions where edges of the photomask overlap may become uneven, and this may cause a problem.
An object of an aspect of the present invention is to provide a manufacturing method of a display device and a display device that can prevent any occurrence of a problem due to overlapping use of photomasks.
A display device according to an aspect of the present invention is a display device including: a plurality of picture elements; first electrodes; and cover layers,
wherein the first electrodes are formed on the plurality of respective picture elements, each of the cover layers is configured to cover an outer periphery of a corresponding first electrode of the first electrodes, each of the cover layers allowing an opening of the corresponding first electrode to be formed, and a cover layer of the cover layers is spaced apart from a cover layer of the cover layers for a different first electrode of the first electrodes, the different first electrode being adjacent to the first electrode.
An exposure device according to an aspect of the present invention is an exposure device for performing pattern formation by a photolithography method on a photosensitive organic material film covering a plurality of first electrodes formed on a surface of a flattening film, the exposure device including: a light source configured to emit light to expose the photosensitive organic material film; and a photomask configured to block part of the light from the light source, wherein the photomask includes a semi-transparent portion configured to block part of the light from the light source and a transparent portion configured to allow the light to pass through, the semi-transparent portion allows, for the plurality of first electrodes, openings of the first electrodes and cover layers each covering an outer periphery of corresponding first electrode of the first electrodes, to be formed by light passing through the semi-transparent portion, and the transparent portion allowing a spacing region to be formed by the light passing through the transparent portion, the spacing region spacing at least parts of a plurality of the cover layers apart from each other.
An exposure device according to an aspect of the present invention is an exposure device for performing pattern formation by a photolithography method on a photosensitive organic material film covering a plurality of first electrodes formed on a surface of a flattening film, the exposure device including: a light source configured to emit light to expose the photosensitive organic material film; and a photomask configured to block part of the light from the light source, wherein the photomask includes a semi-transparent portion configured to block part of the light from the light source and a light blocking portion configured to block the light, the semi-transparent portion allows, for the plurality of first electrodes, openings of the first electrodes and cover layers each covering an outer periphery of corresponding first electrode of the first electrodes, to be formed by light passing through the semi-transparent portion, and the light blocking portion allows a spacing region to be formed by blocking the light by the light blocking portion, the spacing region spacing at least parts of a plurality of the cover layers apart from each other.
A manufacturing method of a display device according to an aspect of the present invention includes: a photosensitive layer forming step of covering a plurality of first electrodes formed on a surface of a flattening film, with a photosensitive organic material; and a cover layer forming step of exposing the photosensitive organic material, by using a photomask blocking part of light from a light source, and thereafter developing the photosensitive organic material, and thereby forming cover layers each covering an outer periphery of a corresponding first electrode of the plurality of first electrodes, the cover layer allowing an opening of the corresponding first electrode to be formed, wherein the photomask includes semi-transparent portions configured to block part of the light from the light source and a transparent portion configured to allow the light to pass through, and in the cover layer forming step, exposure is performed a plurality of times while changing a position of the photomask, and each of the cover layers is spaced apart from the cover layer of a different first electrode of the first electrodes, the different first electrode being adjacent to the first electrode.
According to an aspect of the present invention, it is possible to prevent any occurrence of a problem due to overlapping use of photomasks.
When the flexible display device is manufactured, as illustrated in
Next, a lower face of the resin layer 12 is irradiated with laser light through the support substrate to reduce a bonding force between the support substrate and the resin layer 12, and the support substrate is peeled from the resin layer 12 (step S7). Next, a lower face film 10 is bonded to the lower face of the resin layer 12 (step S8). Next, a layered body including the lower face film 10, the resin layer 12, the barrier layer 3, the TFT layer 4, the light-emitting element layer 5, and the sealing layer 6 is divided and a plurality of individual pieces are obtained (step S9). Next, a function film 39 is bonded on the obtained individual pieces (step S10). Next, an electronic circuit board (an IC chip, for example) is mounted on a terminal for external connection (step S11). Next, edge folding processing (processing of bending a bending portion CL in
Examples of the material of the resin layer 12 include polyimide, epoxy, and polyamide. Examples of the material of the lower face film 10 include polyethylene terephthalate (PET).
The barrier layer 3 is a layer that inhibits moisture or impurities from reaching the TFT layer 4 or the light-emitting element layer 5 when the display device is being used, and can be constituted by a silicon oxide film, a silicon nitride film, or a silicon oxynitride film, or by a layered film of these, for example, formed using chemical vapor deposition (CVD).
The TFT layer 4 includes a semiconductor film 15, an inorganic insulating film 16 (a gate insulating film) in an upper layer overlying the semiconductor film 15, gate electrodes GE in an upper layer overlying the inorganic insulating film 16, an inorganic insulating film 18 in an upper layer overlying the gate electrodes GE, capacitance wiring lines CE in an upper layer overlying the inorganic insulating film 18, an inorganic insulating film 20 in an upper layer overlying the capacitance wiring lines CE, source wiring lines SH and terminals TM in an upper layer overlying the inorganic insulating film 20, and a flattening film 21 in an upper layer overlying the source wiring lines SH and the terminals TM.
Each thin-film transistor Tr (TFT) includes the semiconductor film 15, the inorganic insulating film 16 (the gate insulating film), and the gate electrode GE.
In a non-display region NA of the TFT layer 4, the terminals TM to be used for connection with an electronic circuit board such as an IC chip or an FPC, and terminal wiring lines TW (to be described later in detail) for connecting the terminals TM and wiring lines of an active area DA and the like, are formed.
The semiconductor film 15 is formed of low-temperature polysilicon (LTPS) or an oxide semiconductor, for example. Note that, although the TFT provided with the semiconductor film 15 as the channel is illustrated as having a top gate structure in
Each of the gate electrodes GE, the capacitance electrodes CE, the source wiring lines SH, the terminal wiring lines TW, and the terminals TM is formed of, for example, a monolayer film or a layered film of metal containing at least one of aluminum (Al), tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr), titanium (Ti), and copper (Cu).
Each of the inorganic insulating films 16, 18, and 20 can be formed of, for example, a silicon oxide (SiOx) film or a silicon nitride (SiNx) film, or a layered film of these, formed using CVD.
The flattening film (interlayer insulating film) 21 can be formed of, for example, a coatable photosensitive organic material, such as a polyimide, an acrylic, or the like.
The light-emitting element layer 5 (an organic light emitting diode layer, for example) includes anodes 22 in an upper layer overlying the flattening film 21, cover layers 23A each including an organic film as an electrode edge cover covering an edge of a corresponding one of the anodes 22 (reflective electrodes), spacers 23B to be described later, electroluminescence (EL) layers 24 in an upper layer overlying the anodes 22, and a cathode 25 in an upper layer overlying the EL layers 24. A light-emitting element (an organic light emitting diode (OLED), for example) including the anode 22 having an island shape, the EL layer 24, and the cathode 25, and a subpixel circuit for driving the light-emitting element are provided on a per subpixel 29 (picture element) basis. Each of the cover layers 23A and the spacers 23B is an organic film formed from a photosensitive organic material, and is formed by a film formation device 30 to be described later.
For example, the EL layers 24 are formed by layering a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer in this order, from the lower layer side. The light-emitting layer is formed in an island shape for each subpixel 29 by a vapor deposition method or ink-jet method, but the other layers may be a solid-like common layer. A configuration is also possible in which one or more layers are not formed, out of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer.
The anodes (anode electrodes) 22 are formed by layering of Indium Tin Oxide (ITO) and silver (Ag) or alloy containing Ag, for example, and have light reflectivity (to be described later in detail). The cathode 25 may be formed of a transparent conductive material such as Indium Tin Oxide (ITO) or Indium zinc Oxide (IZO).
In a case where the light-emitting element layer 5 is an OLED layer, positive holes and electrons are recombined inside each EL layer 24 by a drive current between the corresponding anode 22 and the cathode 25, and light is emitted as a result of excitons that are generated by the recombination falling into a ground state. Since the cathode 25 is transparent and the anode 22 has light reflectivity, the light emitted from the EL layer 24 travels upward and becomes top-emitting.
The light-emitting element layer 5 may be used not only in a case of constituting the OLED element, but also in a case of constituting an inorganic light emitting diode or quantum dot light emitting diode.
The sealing layer 6 is transparent, and includes a first inorganic sealing film 26 that covers the cathode 25, an organic sealing film 27 that is formed on the first inorganic sealing film 26, and a second inorganic sealing film 28 that covers the organic sealing film 27. The sealing layer 6 covering the light-emitting element layer 5 inhibits foreign matter, such as water and oxygen, from penetrating to the light-emitting element layer 5.
Each of the first inorganic sealing film 26 and the second inorganic sealing film 28 may be formed of, for example, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film, or of a layered film of these, formed through CVD. The organic sealing film 27 is thicker than the first inorganic sealing film 26 and the second inorganic sealing film 28, is a light-transmissive organic film, and can be formed of a coatable photosensitive organic material such as polyimide or acrylic.
The lower face film 10 is a film bonded on the lower face of the resin layer 12 after the support substrate is peeled off, for achieving a display device with excellent flexibility, and examples of the material of the lower face film 10 include PET. The function film 39 has an optical compensation function, a touch sensor function, a protection function, or the like, for example.
In the above, the case of manufacturing a flexible display device is described, but in the case of manufacturing a non-flexible display device, since the substrate does not need to be replaced, the process proceeds from step S5 to step S9 in
Each of the cover layers 23A covers the entire circumference of the edges of a corresponding one of the plurality of anodes 22 (first electrodes) and forms an opening in the anode 22. Each of the spacers 23B are formed between a plurality of the cover layers 23A.
Each cover layer 23A is an organic film covering the edge of the anode 22, which is a reflective electrode, and has a role as an electrode edge cover that defines the outer edge shape of the exposed surface of the anode 22. More specifically, the cover layer 23A is formed along an edge of a corresponding one of the plurality of anodes 22 and covers the entire circumference of the edges of the anode 22 (see
The spacers 23B are banks that serve as spacers at the time of disposing a vapor deposition mask 50, and are formed on the surface of the flattening film 21. As illustrated in (b) of
The vapor deposition mask 50 is a mask for depositing vapor deposition particles (for example, an organic light-emitting material) that form light-emitting layers in the EL layers 24, and includes a plurality of through-holes corresponding to a desired vapor deposition pattern. Each of the EL layers 24 is layered on a corresponding one of the anodes 22, and the cathode 25 facing the anode 22 is formed in an upper layer of the layered EL layer 24. In other words, the EL layer 24 including the light-emitting layer is formed between the anode 22 and the cathode 25. The cover layers 23A and the spacers 23B may also be described as being formed between the flattening film 21 and the cathode 25.
The spacers 23B are formed on the surface of the flattening film 21 to be spaced apart from the cover layers 23A. Moreover, at least parts of the plurality of cover layers 23A covering the plurality of respective anodes 22 are formed to be spaced apart from each other. Note that all of the cover layers 23A need not be formed to be apart from each other.
Each region between each cover layer 23A and the corresponding spacer 23B or each region between two cover layers 23A is referred to as a spacing region 23C. A distance W1 (i.e., the width of the spacing region 23C) between the cover layer 23A and the spacer 23B is 10 to 20 μm, for example. The outer edge portion of the cover layer 23A and the outer edge portion of the spacer 23B may be formed at an interval greater than or equal to the resolution (for example, greater than or equal to 2 μm) of the exposure device 33 to be used. A width W2 of each spacer 23B itself is not particularly limited, but is 8 to 12 μm, for example.
As illustrated in
In a case where the cover layers 23A and the spacers 23B are integrally formed, the spacers 23B are absorbed by the cover layers 23A due to heat sagging through baking. This makes it difficult to achieve a desired height of the spacers 23B. Forming the spacing regions 23C around each spacer 23B to space the spacers 23B apart from the cover layers 23A can prevent heat sagging of the spacers 23B. One factor of this is surface tension. In a case where a material is surrounded by no material in the same state, it is difficult for the material to spread out. However, in a case where no such effect is required, the spacers 23B and the cover layers 23A may be formed integrally. Alternatively, the cover layers 23A may be provided with no spacer 23B being provided. In this case, protrusions may be provided on the vapor deposition mask 50.
As illustrated in
As illustrated in
The coating device 31 is a device configured to apply a photosensitive organic material for forming the cover layers 23A and the spacers 23B to the surface of the flattening film 21. As the coating device 31, for example, a spin coating or a slit coating type coating device can be used.
The heating device 32 is a heater for prebaking.
The exposure device 33 is a device configured to perform pattern formation by the photolithography method. The exposure device 33 irradiates the applied photosensitive organic material (photosensitive organic material film) with light passing through the photomask 40, to thereby increase the solubility in a developing solution for a part of the photosensitive organic material.
The developing device 34 is a device configured to remove the irradiated part of the photosensitive organic material in the developing solution.
Distribution of light emitted from the light source 35 (hereinafter referred to as emitted light) is controlled by the light collection optical system 36, and the photomask 40 is irradiated with the resultant light. A known light source such as a high-pressure mercury lamp can be used as the light source 35, and a wavelength suitable for the photosensitive organic material to be used may be selected for the wavelength of the emitted light. A g-line, an h-line, an i-line, or a mixed wavelength thereof, or the like can be used as the wavelength.
As illustrated in
As illustrated in
The semi-transparent regions 41 are regions allowing the emitted light to partially pass through. In the semi-transparent regions 41, a number of fine openings or fine slits that cannot be resolved by the exposure device to be used are formed. With the light passing through the semi-transparent regions 41, the height H1 of the cover layers 23A is lowered without the cover layers 23A being completely removed in the developing step. Hence, the height H1 of the cover layers 23A can be set by the transmittance of the fine openings or fine slits in the semi-transparent regions 41. The light transmittance of the semi-transparent regions 41 may be set to a preferable value depending on the desired height of the cover layers 23A.
The light blocking region 42 is a region blocking the emitted light nearly 100%. For this reason, the film surface of the spacer 23B corresponding to the light blocking region 42 is not affected by the emitted light, and the height H2 of the spacer 23B is not reduced by the exposure. The light blocking region 42 illustrated in
The light blocking region 42 is formed between regions corresponding to the anodes 22 (regions indicated by dashed lines in
The forming position and the formation interval of the light blocking regions 42 are not particularly limited, and may be formed on the left and right or the upper and lower sides of the region corresponding to each of the anodes 22, or may be provided on the left and right and the upper and lower sides of the region. One light blocking region 42 may be formed for the anode 22 or may be formed for a predetermined number of anodes 22. In other words, the numerical and positional relationships between the spacers 23B and the anodes 22 can be arbitrarily set.
The transparent region 43 is a region allowing the emitted light to pass through. Hence, the solubility of the photosensitive organic material directly under the transparent region 43 is increased by the exposure, to be completely removed in the developing step. As a result, spacing regions 23C are formed.
Transparent regions 44 (transparent portions) for defining outer edges of the exposed surfaces of the anodes 22 are formed in the photomask 40. With the light passing through the transparent regions 44, the solubility of part of the photosensitive organic material covering a surface of the corresponding anode 22 increases, to expose the part of the surface of the anode 22. By using the above-described photomask 40, the cover layers 23A, the spacer 23B, and the exposed surfaces of the anodes 22 can be formed by performing the photolithography method once.
As described above, in the present embodiment, the overlapping region 45 may correspond to the transparent region 43, and hence the photomask 40 can be arranged in an overlapping manner in the overlapping region 45. In this way, any occurrence of a problem due to overlapping use of the photomask 40 can be prevented.
A photosensitive organic material in a wide range is irradiated with light in the transparent region 43. This allows the developing solution to readily enter the spacing regions 23C at the time of developing using the developing device 34, and consequently allows the photosensitive organic material to readily dissolve. Moreover, the amount of the cover layers 23A is reduced with the spacing regions 23C being formed. As a result, moisture and impurities originating from the photosensitive organic material can be prevented from contaminating the light-emitting element layer 5. It is also possible to dispose a layer having a function of preferentially adsorbing moisture in each of the spacing regions 23C.
In the present embodiment, in a case of providing the spacers 23B, it is possible to prevent the spacers 23B from being absorbed by the cover layers 23A due to heat sagging as described above. Hence, it is not necessary to increase the area of the region of each of the spacers 23B in order to achieve the desired height, and this can reduce the region of the spacers 23B. This is an advantage in manufacturing high-definition display panels.
It is also possible for the cover layers 23A each formed in an island pattern, to prevent heat sagging during baking. Hence, it may be easier for the cover layers 23A to have the desired height and to have clear edges.
As illustrated in
Thereafter, the display device 2A is brought into the heating device 32 to be prebaked at 90 to 120° C., for example (S2). S1 and S2 are referred to as photosensitive layer forming steps.
After the heating, the exposure device 33 performs an exposure process (S3). First, the exposure device 33 positions the photomask 40 relative to the photosensitive organic film to be exposed. Then, the exposure device 33 turns on light of the light source 35 and irradiates the organic film with emitted light through the photomask 40. This step is performed a plurality of times while changing the position of the photomask 40 with respect to the mother glass substrate.
The display device 2A thus exposed is developed in the developing device 34 to form the cover layers 23A and the spacers 23B having shapes corresponding to the pattern of the photomask 40 (S4).
Finally, the display device 2A is brought into a heating device (not illustrated) and is baked at 200 to 250° C., for example (S5). S3, S4, and S5 are referred to as cover layer forming steps.
After the cover layers 23A and the spacers 23B are formed, an organic light-emitting material vaporized or sublimated by a vapor deposition source is deposited on the anodes 22 through the vapor deposition mask 50 in a vacuum to form the EL layers 24 (organic layers) (deposition step). In this step, the vapor deposition is performed while the vapor deposition mask 50 is abutting against the spacers 23B. The vapor deposition method is not particularly limited, and a known method may be used. Such a manufacturing method of the display device 2 is also included within the technical scope of the present disclosure.
The spacers 23B are not limited to forming the spacers 23B on the surface of the flattening film 21. For example, the spacers 23B may be formed on the anodes 22 that are insulated or may be formed on an inorganic film.
Thus, the EL device manufacturing apparatus 70 including the film formation device 30 is also included within the technical scope of the present disclosure.
Although the photomask 40 for performing a positive-working photolithography method is illustrated in
In the negative-working photolithography method, the photosensitive organic material is removed at each location not irradiated with light emitted from the light source 35, in the developing step.
The display device 2C according to the present embodiment may have, in the display region 61, a similar configuration to that of the display device 2B described in the fourth embodiment by using
As illustrated in
A height H3 of the frame-shaped spacer 63 is the same as the height of the spacer 23B. This allows the frame-shaped spacer 63, similar to the spacer 23B, to function as an abutting surface of the vapor deposition mask 50. The end portion of the display region 61 corresponds to the spacing region 23C, in which no cover layer 23A is formed, and the cathode 25 is formed on the surface of the flattening film 21.
The frame-shaped spacer 63 is formed as an independent island pattern and is spaced apart from the cover layers 23A. Hence, similarly to the relationship between the cover layers 23A and the spacers 23B, it is easy to set the frame-shaped spacer 63 at a desired height. The frame-shaped spacer 63 is positioned in the same layer as the cover layers 23A and the spacers 23B, and is formed of the same organic photosensitive material in the same photolithography step as the cover layers 23A and the spacers 23B.
A display device according to Aspect 1 is a display device including: a plurality of picture elements; first electrodes; and cover layers, wherein the first electrodes are formed on the plurality of respective picture elements, each of the cover layers is configured to cover an outer periphery of a corresponding first electrode of the first electrodes, each of the cover layers allowing an opening of the corresponding first electrode to be formed, and a cover layers of the cover layers is spaced apart from a cover layer of the cover layers for a different first electrode of the first electrodes, the different first electrode being adjacent to the first electrode.
In a display device according to Aspect 2, a spacer formed in a same layer as the cover layers is provided between a plurality of the first electrodes, the spacer is higher than the cover layers, and an outer edge portion of the spacer is spaced apart from outer edge portions of the cover layers.
A display device according to Aspect 3 further includes a second electrode facing the first electrodes, wherein the first electrodes and the cover layers are formed on a surface of a flattening film, slits surrounding, in the flattening film, a display region including the plurality of picture elements are provided, to electrically communicate the second electrode and wiring lines of a thin-film transistor layer through the slits, and a frame-shaped spacer in the same layer as the cover layers is formed to surround the display region and the slits and is as high as the spacer.
An exposure device according to Aspect 4 is an exposure device for performing pattern formation by a photolithography method on a photosensitive organic material film covering a plurality of first electrodes formed on a surface of a flattening film, the exposure device including: a light source configured to emit light to expose the photosensitive organic material film; and a photomask configured to block part of the light from the light source, wherein the photomask includes a semi-transparent portion configured to block part of the light from the light source and a transparent portion configured to allow the light to pass through, the semi-transparent portion allows, for the plurality of first electrodes, openings of the first electrodes and cover layers each covering an outer periphery of corresponding first electrode of the first electrodes, to be formed by light passing through the semi-transparent portion, and the transparent portion allowing a spacing region to be formed by the light passing through the transparent portion, the spacing region spacing at least parts of a plurality of the banks apart from each other.
In an exposure device according to Aspect 5, the photomask further includes a light blocking portion configured to block the light, and the light blocking portion allows a spacer to be formed higher than the cover layers in a region between the plurality of first electrodes on the surface of the flattening film.
An exposure device according to Aspect 6 is an exposure device for performing pattern formation by a photolithography method on a photosensitive organic material film covering a plurality of first electrodes formed on a surface of a flattening film, the exposure device including: a light source configured to emit light to expose the photosensitive organic material film; and a photomask configured to block part of the light from the light source, wherein the photomask includes a semi-transparent portion configured to block part of the light from the light source and a light blocking portion configured to block the light, the semi-transparent portion allows, for the plurality of first electrodes, openings of the first electrodes and cover layers each covering an outer periphery of corresponding first electrode of the first electrodes, to be formed by light passing through the semi-transparent portion, and the light blocking portion allows a spacing region to be formed by blocking the light by the light blocking portion, the spacing region spacing at least parts of a plurality of the cover layers apart from each other.
In an exposure device according to Aspect 7, the photomask further includes a transparent portion configured to allow the light to pass through, and the transparent portion allows a spacer to be formed higher than the cover layers in a region between the plurality of first electrodes on the surface of the flattening film, by the light passing through the transparent portion.
A manufacturing method of a display device according to Aspect 8 includes: a photosensitive layer forming step of covering a plurality of first electrodes formed on a surface of a flattening film, with a photosensitive organic material; and a cover layer forming step of exposing the photosensitive organic material, by using a photomask blocking part of light from a light source, and thereafter developing the photosensitive organic material, and thereby forming cover layers each covering an outer periphery of a corresponding first electrode of the plurality of first electrodes, the cover layer allowing an opening of the corresponding first electrode to be formed, wherein the photomask includes semi-transparent portions configured to block part of the light from the light source and a transparent portion configured to allow the light to pass through, and in the cover layer forming step, exposure is performed a plurality of times while changing a position of the photomask, and each of the cover layers is spaced apart from the cover layer of a different first electrode of the first electrodes, the different first electrode being adjacent to the first electrode.
An electro-optical element (an electro-optical element whose luminance and transmittance are controlled by an electric current) that is provided in a display device according to the present embodiment is not particularly limited thereto. Examples of the display device according to the present embodiment include an organic Electro Luminescence (EL) display provided with the Organic Light Emitting Diode (OLED) as the electro-optical element, an inorganic EL display provided with an inorganic light emitting diode as the electro-optical element, and a Quantum dot Light Emitting Diode (QLED) display provided with a QLED as the electro-optical element.
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2017/035662 | 9/29/2017 | WO | 00 |
