This application claims priority under 35 USC § 119 to Korean Patent Application No. 10-2023-0100409 filed on Aug. 1, 2023, in the Korean Intellectual Property Office (KIPO), the entire disclosure of which is incorporated by reference herein.
Embodiments relate to a display device. More particularly, embodiments relate to a display device which includes a flexible substrate.
A display device may include a substrate, and transistors and voltage lines disposed on the substrate. The transistor may be turned on in response to a signal applied to a gate electrode, and the voltage line may transmit a voltage to a source or drain electrode of the transistor.
When voltages having mutually different polarities are applied to the gate electrode of the transistor and the voltage line, which are adjacent to each other, respectively, induced charges may be accumulated in a portion of the substrate located under the transistor, and a threshold voltage of the transistor may be shifted by the induced charges. When the threshold voltage of the transistor is shifted, a leakage current of the transistor may be increased, and display quality of an image displayed by the display device may deteriorate.
Embodiments may provide a display device in which display quality of an image is improved.
An embodiment of a display device includes a display panel including a plurality of pixels configured to receive an initialization voltage through an initialization voltage line, a controller configured to output a voltage control signal for controlling a voltage level of the initialization voltage, and a power manager configured to provide the initialization voltage to the initialization voltage line, change the voltage level of the initialization voltage to an initialization level at or after a power-on time at which a power starts to be supplied and before a display-on time at which an image starts to be displayed based on the voltage control signal, and change the voltage level of the initialization voltage to a target level corresponding to a luminance of the image at or after the display-on time based on the power control signal.
In an embodiment, an absolute value of the initialization level may be less than an absolute value of the target level.
In an embodiment, the initialization level may be about −1 V to about 1 V.
In an embodiment, a polarity of the initialization level may be different from a polarity of the target level.
In an embodiment, the power manager may be configured to change the voltage level of the initialization voltage to a predetermined fixed level at or after the power-on time and before the voltage level of the initialization voltage is changed to the initialization level. An absolute value of the initialization level may be less than an absolute value of the fixed level.
In an embodiment, the power manager may be configured to change the voltage level of the initialization voltage from the target level to the initialization level at or after a display-off time at which the display of the image starts to end and before a power-off time at which the supply of the power starts to be cut off based on the voltage control signal.
In an embodiment, the power manager may be configured to change the voltage level of the initialization voltage to a predetermined fixed level at or after the display-off time and before the voltage level of the initialization voltage is changed to the initialization level. An absolute value of the initialization level may be less than an absolute value of the fixed level.
In an embodiment, the power manager may be configured to change the voltage level of the initialization voltage from the target level to the initialization level during a vertical porch period in which a data voltage is not provided to each of the pixels based on the voltage control signal.
In an embodiment, each of the pixels may include a driving transistor configured to generate a driving current, a write transistor connected between the driving transistor and a data line configured to transmit a data voltage, a light emitting diode configured to emit a light based on the driving current, and a bypass transistor connected between the initialization voltage line and the light emitting diode.
In an embodiment, the initialization voltage line may at least partially overlap a gate electrode of the write transistor.
An embodiment of a display device includes a display panel including a plurality of pixels configured to receive an initialization voltage through an initialization voltage line, a controller configured to output a voltage control signal for controlling a voltage level of the initialization voltage, and a power manager configured to provide the initialization voltage to the initialization voltage line, and change the voltage level of the initialization voltage from a target level corresponding to a luminance of an image to an initialization level at or after a display-off time at which display of the image starts to end and before a power-off time at which supply of a power starts to be cut off based on the voltage control signal. An absolute value of the initialization level may be less than an absolute value of the target level.
In an embodiment, the initialization level may be about −1 V to about 1 V.
In an embodiment, a polarity of the initialization level may be different from a polarity of the target level.
In an embodiment, the power manager may be configured to change the voltage level of the initialization voltage to a predetermined fixed level at or after the display-off time and before the voltage level of the initialization voltage is changed to the initialization level. The absolute value of the initialization level may be less than an absolute value of the fixed level.
In an embodiment, the power manager may be configured to change the voltage level of the initialization voltage to the target level during an active period in which a data voltage is provided to each of the pixels based on the voltage control signal, and change the voltage level of the initialization voltage from the target level to the initialization level during a vertical porch period in which the data voltage is not provided to each of the pixels based on the voltage control signal.
In an embodiment, each of the pixels may include a driving transistor configured to generate a driving current, a write transistor connected between the driving transistor and a data line configured to transmit a data voltage, a light emitting diode configured to emit a light based on the driving current, and a bypass transistor connected between the initialization voltage line and the light emitting diode.
An embodiment of a display device includes a display panel including a plurality of pixels configured to receive an initialization voltage through an initialization voltage line, a controller configured to output a voltage control signal for controlling a voltage level of the initialization voltage, and a power manager configured to provide the initialization voltage to the initialization voltage line, change the voltage level of the initialization voltage to a target level corresponding to a luminance of an image in an active period in which a data voltage is provided to each of the pixels based on the voltage control signal, and change the voltage level of the initialization voltage from the target level to an initialization level in a vertical porch period in which the data voltage is not provided to each of the pixels based on the voltage control signal. An absolute value of the initialization level may be less than an absolute value of the target level.
In an embodiment, the initialization level may be about −1 V to about 1 V.
In an embodiment, a polarity of the initialization level may be different from a polarity of the target level.
In an embodiment, each of the pixels may include a driving transistor configured to generate a driving current, a write transistor connected between the driving transistor and a data line configured to transmit the data voltage, a light emitting diode configured to emit a light based on the driving current, and a bypass transistor connected between the initialization voltage line and the light emitting diode.
In the display device according to the embodiments, the absolute value of the voltage level of the initialization voltage may be reduced at or after the power-on time and before the display-on time, at or after the display-off time and before the power-off time, or in the vertical porch period within the frame period, so that the amount of induced charges in the flexible substrate may be reduced, and a shift of a threshold voltage of a transistor may be reduced. Accordingly, display quality of an image displayed by the display device may be improved.
Illustrative, non-limiting embodiments will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings.
Hereinafter, a display device according to embodiments of the present disclosure will be described in more detail with reference to the accompanying drawings. The same or similar reference numerals will be used for the same elements in the accompanying drawings.
Referring to
The display panel 110 may include pixels PX. According to an embodiment, the pixels PX may include a first pixel configured to emit a light having a first color, a second pixel configured to emit a light having a second color, and a third pixel configured to emit a light having a third color. For example, the first color, the second color, and the third color may be red, green, and blue, respectively.
The scan driver 120 may provide scan signals SS to the pixels PX. The scan driver 120 may sequentially generate first to nth scan signals SS (where n is a natural number that is greater than or equal to 2) corresponding to first to nth pixel rows, respectively, based on a first control signal CNT1. The first control signal CNT1 may include a scan clock signal, a scan start signal, and the like.
The emission driver 130 may provide emission signals EM to the pixels PX. The emission driver 130 may sequentially generate first to nth emission signals EM corresponding to the first to nth pixel rows, respectively, based on a second control signal CNT2. The second control signal CNT2 may include an emission clock signal, an emission start signal, and the like.
The data driver 140 may provide data voltages VDAT to the pixels PX. The data driver 140 may generate first to mth data voltages VDAT (where m is a natural number that is greater than or equal to 2) corresponding to first to mth pixel columns, respectively, based on second image data IMD2 and a third control signal CNT3. According to an embodiment, the second image data IMD2 may include gray level values corresponding to the pixels PX, respectively. The third control signal CNT3 may include a data clock signal, a horizontal start signal, a load signal, and the like.
The power manager 150 may provide a first power voltage ELVDD, a second power voltage ELVSS, a first initialization voltage VINT (hereinafter referred to as a “gate initialization voltage”), and a second initialization voltage VAINT (hereinafter referred to as an “initialization voltage”) to the pixels PX. The power manager 150 may generate the first power voltage ELVDD, the second power voltage ELVSS, the gate initialization voltage VINT, and the initialization voltage VAINT based on a fourth control signal CNT4. The fourth control signal CNT4 may include a voltage control signal VCS for controlling a voltage level of the initialization voltage VAINT. The power manager 150 may change the voltage level of the initialization voltage VAINT based on the voltage control signal VCS.
The controller 160 may control an operation or driving of the scan driver 120, an operation or driving of the emission driver 130, an operation or driving of the data driver 140, and an operation or driving of the power manager 150. The controller 160 may generate the first control signal CNT1, the second control signal CNT2, the second image data IMD2, the third control signal CNT3, and the fourth control signal CNT4 based on first image data IMD1 and a control signal CNT. According to an embodiment, the first image data IMD1 may include gray level values corresponding to the pixels PX, respectively. The controller 160 may convert the first image data IMD1 into the second image data IMD2. The control signal CNT may include a master clock signal, a vertical synchronization signal, a horizontal synchronization signal, a data enable signal, and the like.
Referring to
The first transistor T1 may be connected between a first node N1 and a second node N2. The first transistor T1 may include a first electrode connected to the first node N1, a second electrode connected to the second node N2, and a gate electrode connected to a third node N3. The first transistor T1 may generate a driving current DC corresponding to a voltage between the first node N1 and the third node N3.
The second transistor T2 may be connected between the first node N1 and a data line DL configured to transmit the data voltage VDAT, and turned on in response to the write gate signal GW. The second transistor T2 may include a first electrode connected to the data line DL, a second electrode connected to the first node N1, and a gate electrode configured to receive the write gate signal GW. The second transistor T2 may transmit the data voltage VDAT to the first node N1 in response to the write gate signal GW.
The third transistor T3 may be connected between the second node N2 and the third node N3, and turned on in response to the compensation gate signal GC. The third transistor T3 may include a first electrode connected to the second node N2, a second electrode connected to the third node N3, and a gate electrode configured to receive the compensation gate signal GC. The third transistor T3 may connect the second node N2 to the third node N3 in response to the compensation gate signal GC. According to an embodiment, the third transistor T3 may include a bottom gate electrode and a top gate electrode, which are configured to receive the compensation gate signal GC. In other words, the third transistor T3 may be a dual gate transistor.
The fourth transistor T4 may be connected between the third node N3 and a gate initialization voltage line configured to transmit the gate initialization voltage VINT, and turned on in response to the initialization gate signal GI. The fourth transistor T4 may include a first electrode connected to the gate initialization voltage line, a second electrode connected to the third node N3, and a gate electrode configured to receive the initialization gate signal GI. The fourth transistor T4 may transmit the gate initialization voltage VINT to the third node N3 in response to the initialization gate signal GI. According to an embodiment, the fourth transistor T4 may include a bottom gate electrode and a top gate electrode, which are configured to receive the initialization gate signal GI. In other words, the fourth transistor T4 may be a dual gate transistor.
The fifth transistor T5 may be connected between the first node N1 and a first power voltage line configured to transmit the first power voltage ELVDD, and turned on in response to the emission signal EM. The fifth transistor T5 may include a first electrode connected to the first power voltage line, a second electrode connected to the first node N1, and a gate electrode configured to receive the emission signal EM. The fifth transistor T5 may transmit the first power voltage ELVDD to the first node N1 in response to the emission signal EM.
The sixth transistor T6 may be connected between the second node N2 and a fourth node N4, and turned on in response to the emission signal EM. The sixth transistor T6 may include a first electrode connected to the second node N2, a second electrode connected to the fourth node N4, and a gate electrode configured to receive the emission signal EM. The sixth transistor T6 may connect the second node N2 to the fourth node N4 in response to the emission signal EM.
The seventh transistor T7 may be connected between the fourth node N4 and an initialization voltage line IVL configured to transmit the initialization voltage VAINT, and turned on in response to the bypass gate signal GB. The seventh transistor T7 may include a first electrode connected to the initialization voltage line IVL, a second electrode connected to the fourth node N4, and a gate electrode configured to receive the bypass gate signal GB. The seventh transistor T7 may transmit the initialization voltage VAINT to the fourth node N4 in response to the bypass gate signal GB.
Although an embodiment in which each of the first transistor T1, the second transistor T2, the fifth transistor T5, the sixth transistor T6, and the seventh transistor T7 is a P-type transistor (e.g., a PMOS transistor), and each of the third transistor T3 and the fourth transistor T4 is an N-type transistor (e.g., an NMOS transistor) has been shown in
The storage capacitor CST may be connected between the third node N3 and the first power voltage line. The storage capacitor CST may include a first electrode connected to the third node N3, and a second electrode connected to the first power voltage line. The storage capacitor CST may maintain a voltage of the third node N3.
Although an embodiment in which the pixel PX includes seven transistors and one capacitor has been shown in
The light emitting diode EL may be connected between the fourth node N4 and a second power voltage line configured to transmit the second power voltage ELVSS. The light emitting diode EL may include a first electrode (e.g., an anode) connected to the fourth node N4, and a second electrode (e.g., a cathode) connected to the second power voltage line. The light emitting diode EL may emit a light based on the driving current DC.
According to an embodiment, the light emitting diode EL may be an organic light emitting diode. According to another embodiment, the light emitting diode EL may be an inorganic light emitting diode, a micro light emitting diode, or a quantum dot light emitting diode.
Referring to
The substrate SUB may be a flexible substrate including an organic material. According to an embodiment, the substrate SUB may include a first organic layer OL1, a first barrier layer BAR1 disposed on the first organic layer OL1, a second organic layer OL2 disposed on the first barrier layer BAR1, and a second barrier layer BAR2 disposed on the second organic layer OL2. According to an embodiment, each of the first organic layer OL1 and the second organic layer OL2 may include an organic insulating material. For example, each of the first organic layer OL1 and the second organic layer OL2 may include polyimide (PI). According to an embodiment, each of the first barrier layer BAR1 and the second barrier layer BAR2 may include an inorganic insulating material. For example, each of the first barrier layer BAR1 and the second barrier layer BAR2 may include a silicon compound or amorphous silicon.
The buffer layer BUF may be disposed on the substrate SUB. According to an embodiment, the buffer layer BUF may include an inorganic insulating material. For example, the buffer layer BUF may include silicon oxide, silicon nitride, silicon oxynitride, and the like.
The first active layer ACT1 may be disposed on the buffer layer BUF. According to an embodiment, the first active layer ACT1 may include polycrystalline silicon. The first electrode, a channel, and the second electrode of the first transistor T1, the first electrode, a channel, and the second electrode of the second transistor T2, the first electrode, a channel, and the second electrode of the fifth transistor T5, the first electrode, a channel, and the second electrode of the sixth transistor T6, and the first electrode, a channel, and the second electrode of the seventh transistor T7 may be formed along the first active layer ACT1.
The first gate insulating layer GI1 may be disposed on the first active layer ACT1. According to an embodiment, the first gate insulating layer GI1 may include an inorganic insulating material. For example, the first gate insulating layer GI1 may include silicon oxide, silicon nitride, silicon oxynitride, and the like.
The first gate layer GAT1 may be disposed on the first gate insulating layer GI1. According to an embodiment, the first gate layer GAT1 may include a conductive material. For example, the first gate layer GAT1 may include a metal, a metal compound, and the like. The gate electrode of the first transistor T1, the gate electrode G2 of the second transistor T2, the gate electrode of the fifth transistor T5, the gate electrode of the sixth transistor T6, the gate electrode of the seventh transistor T7, and the first electrode of the storage capacitor CST may be formed by the first gate layer GAT1.
The second gate insulating layer GI2 may be disposed on the first gate layer GAT1. According to an embodiment, the second gate insulating layer GI2 may include an inorganic insulating material. For example, the second gate insulating layer GI2 may include silicon oxide, silicon nitride, silicon oxynitride, and the like.
The second gate layer GAT2 may be disposed on the second gate insulating layer GI2. According to an embodiment, the second gate layer GAT2 may include a conductive material. For example, the second gate layer GAT2 may include a metal, a metal compound, and the like. The bottom gate electrode of the third transistor T3, the bottom gate electrode of the fourth transistor T4, and the second electrode of the storage capacitor CST may be formed by the second gate layer GAT2.
The first interlayer insulating layer ILD1 may be disposed on the second gate layer GAT2. According to an embodiment, the first interlayer insulating layer ILD1 may include an inorganic insulating material. For example, the first interlayer insulating layer ILD1 may include silicon oxide, silicon nitride, silicon oxynitride, and the like.
The second active layer may be disposed on the first interlayer insulating layer ILD1. According to an embodiment, the second active layer may include an oxide semiconductor. The first electrode, a channel, and the second electrode of the third transistor T3 and the first electrode, a channel, and the second electrode of the fourth transistor T4 may be formed along the second active layer.
The third gate insulating layer GI3 may be disposed on the second active layer. According to an embodiment, the third gate insulating layer GI3 may include an inorganic insulating material. For example, the third gate insulating layer GI3 may include silicon oxide, silicon nitride, silicon oxynitride, and the like.
The third gate layer GAT3 may be disposed on the third gate insulating layer GI3. According to an embodiment, the third gate layer GAT3 may include a conductive material. For example, the third gate layer GAT3 may include a metal, a metal compound, and the like. The top gate electrode of the third transistor T3 and the top gate electrode of the fourth transistor T4 may be formed by the third gate layer GAT3.
The second interlayer insulating layer ILD2 may be disposed on the third gate layer GAT3. According to an embodiment, the second interlayer insulating layer ILD2 may include an inorganic insulating material. For example, the second interlayer insulating layer ILD2 may include silicon oxide, silicon nitride, silicon oxynitride, and the like.
The first source-drain layer may be disposed on the second interlayer insulating layer ILD2. According to an embodiment, the first source-drain layer may include a conductive material. For example, the first source-drain layer may include a metal, a metal compound, and the like. The first source-drain layer may include an initialization voltage line IVL and a connection pattern CP. The initialization voltage line IVL may make contact with a portion of the first active layer ACT1 corresponding to the first electrode of the seventh transistor T7 through a contact hole. The connection pattern CP may make contact with a portion of the first active layer ACT1 corresponding to the first electrode of the second transistor T2 through a contact hole.
The first via insulating layer VIA1 may be disposed on the first source-drain layer. According to an embodiment, the first via insulating layer VIA1 may include an inorganic insulating material. For example, the first via insulating layer VIA1 may include silicon oxide, silicon nitride, silicon oxynitride, and the like. According to another embodiment, the first via insulating layer VIA1 may include an organic insulating material. For example, the first via insulation layer VIA1 may include polyimide (PI), and the like.
The second source-drain layer may be disposed on the first via insulating layer VIA1. According to an embodiment, the second source-drain layer may include a conductive material. For example, the second source-drain layer may include a metal, a metal compound, and the like. The first source-drain layer may include a data line DL. The data line DL may make contact with the connection pattern CP through a contact hole.
The initialization voltage line IVL may be adjacent to the second transistor T2 when viewed in a plan view. According to an embodiment, the initialization voltage line IVL may at least partially overlap the gate electrode G2 of the second transistor T2 when viewed in a plan view. When the initialization voltage line IVL is adjacent to the second transistor T2 when viewed in a plan view, an initialization voltage VAINT that is less than 0 V (e.g., about −7.3 V) is applied to the initialization voltage line IVL, and a gate high voltage that is greater than 0 V (about 7.4 V) is applied to the gate electrode G2 of the second transistor T2, induced charges may be accumulated in a portion of the substrate SUB (e.g., the second organic layer OL2) located under the second transistor T2. When the induced charges are accumulated in the portion of the substrate SUB located under the second transistor T2, a threshold voltage of the second transistor T2 may be shifted, so that a leakage current of the second transistor T2 may be increased. When the leakage current of the second transistor T2 is increased, a flicker may be visually recognized in an image displayed by the display device 100.
Referring to
The power manager 150 may change the voltage level of the initialization voltage VAINT to an initialization level L_INIT before a display-on time T_DON at which the display device 100 starts to display the image based on the voltage control signal VCS. The power manager 150 may change the voltage level of the initialization voltage VAINT from the fixed level L_FXD to the initialization level L_INIT in response to a falling edge of the voltage control signal VCS. A period after the power-on time T_PON and before the display-on time T_DON may be defined as a power-on period PWRON. An absolute value of the initialization level L_INIT may be less than an absolute value of the fixed level L_FXD. According to an embodiment, the initialization level L_INIT may be about −1 V to about 1 V.
The power manager 150 may change the voltage level of the initialization voltage VAINT to a target level L_TGT corresponding to a luminance of the image at or after the display-on time T_DON based on the voltage control signal VCS. The power manager 150 may change the voltage level of the initialization voltage VAINT from the initialization level L_INIT to the target level L_TGT in response to a rising edge of the voltage control signal VCS. A period after the display-on time T_DON may be defined as a display-on period DISON. The absolute value of the initialization level L_INIT may be less than an absolute value of the target level L_TGT. According to an embodiment, the target level L_TGT may be about −7 V to about −2 V. The target level L_TGT may be gradually decreased as the luminance of the image decreases, and the target level L_TGT may be gradually increased as the luminance of the image increases. For example, when the luminance of the image corresponds to a lowest gray level, the target level L_TGT may be about −7 V, and when the luminance of the image corresponds to a highest gray level, the target level L_TGT may be about −2 V.
According to an embodiment, a polarity of the initialization level L_INIT may be different from a polarity of the target level L_TGT. For example, when the target level L_TGT is less than 0 V, the initialization level L_INIT may be greater than 0 V.
Since the voltage level of the initialization voltage VAINT is changed to the initialization level L_INIT having the absolute value that is less than the absolute value of the target level L_TGT at or after the power-on time T_PON and before the display-on time T_DON in the present embodiment, an amount of the induced charges accumulated in the substrate SUB due to the adjacency of the initialization voltage line IVL and the second transistor T2 may be reduced, and the shift of the threshold voltage of the second transistor T2 may be reduced. Accordingly, the leakage current of the second transistor T2 may be reduced, and display quality of the image displayed by the display device 100 may be improved. In addition, since the voltage level of the initialization voltage VAINT is changed to the initialization level L_INIT before the display-on time T_DON, the change in the voltage level of the initialization voltage VAINT may not influence the image display of the display device 100.
Referring to
The power manager 150 may change the voltage level of the initialization voltage VAINT to the initialization level L_INIT before a power-off time T_POFF at which the supply of the power to the display device 100 starts to be cut off based on the voltage control signal VCS. The power manager 150 may change the voltage level of the initialization voltage VAINT from the fixed level L_FXD to the initialization level L_INIT in response to the falling edge of the voltage control signal VCS. A period after the display-off time T_DOFF and before the power-off time T_POFF may be defined as a display-off period DISOFF.
The power manager 150 may change the voltage level of the initialization voltage VAINT to about 0 V at or after the power-off time T_POFF based on the voltage control signal VCS. The power manager 150 may change the voltage level of the initialization voltage VAINT from the initialization level L_INIT to about 0 V in response to the rising edge of the voltage control signal VCS. A period after the power-off time T_POFF may be defined as the power-off period PWROFF.
Since the voltage level of the initialization voltage VAINT is changed to the initialization level L_INIT having the absolute value that is less than the absolute value of the target level L_TGT at or after the display-off time T_DOFF and before the power-off time T_POFF in the present embodiment, the amount of the induced charges accumulated in the substrate SUB due to the adjacency of the initialization voltage line IVL and the second transistor T2 may be reduced, and the shift of the threshold voltage of the second transistor T2 may be reduced. Accordingly, the leakage current of the second transistor T2 may be reduced, and the display quality of the image displayed by the display device 100 may be improved. In addition, since the voltage level of the initialization voltage VAINT is changed to the initialization level L_INIT at or after the display-off time T_DOFF, the change in the voltage level of the initialization voltage VAINT may not influence the image display of the display device 100.
Referring to
The power manager 150 may change the voltage level of the initialization voltage VAINT to the initialization level L_INIT in a vertical porch period VP in which the data voltages VDAT are not provided to the pixels PX based on the voltage control signal VCS. The power manager 150 may change the voltage level of the initialization voltage VAINT from the target level L_TGT to the initialization level L_INIT in response to the falling edge of the voltage control signal VCS. The vertical porch period VP may include a vertical front porch period VFP after the active period ACT, and a vertical back porch period VBP before the active period ACT.
Since the voltage level of the initialization voltage VAINT is changed to the initialization level L_INIT having the absolute value that is less than the absolute value of the target level L_TGT in the vertical porch period VP in the present embodiment, the amount of the induced charges accumulated in the substrate SUB due to the adjacency of the initialization voltage line IVL and the second transistor T2 may be reduced, and the shift of the threshold voltage of the second transistor T2 may be reduced. Accordingly, the leakage current of the second transistor T2 may be reduced, and the display quality of the image displayed by the display device 100 may be improved. In addition, since the voltage level of the initialization voltage VAINT is changed to the initialization level L_INIT in the vertical porch period VP in which the data voltages VDAT are not provided to the pixels PX, an influence of the change in the voltage level of the initialization voltage VAINT on the display device 100 may be minimized.
Referring to
According to an embodiment, the power manager 150 may periodically change the voltage level of the initialization voltage VAINT to the initialization level L_INIT in one porch period VP among a plurality of vertical porch periods VP. For example, the power manager 150 may change the voltage level of the initialization voltage VAINT to the initialization level L_INIT in each of the first, third, and fifth vertical porch periods VP1, VP3, and VP5 as in CASE2, change the voltage level of the initialization voltage VAINT to the initialization level L_INIT in each of the first and fourth vertical porch periods VP1 and VP4 as in CASE3, or change the voltage level of the initialization voltage VAINT to the initialization level L_INIT in each of the first and fifth vertical porch periods VP1 and VP5 as in CASE4.
Referring to
The power manager 150 may change the voltage level of the initialization voltage VAINT to an initialization level L_INIT before a display-on time T_DON based on a voltage control signal VCS (S120). The power manager 150 may change the voltage level of the initialization voltage VAINT from the fixed level L_FXD to the initialization level L_INIT in response to a falling edge of the voltage control signal VCS. An absolute value of the initialization level L_INIT may be less than an absolute value of the fixed level L_FXD. According to an embodiment, the initialization level L_INIT may be about −1 V to about 1 V.
The power manager 150 may change the voltage level of the initialization voltage VAINT to a target level L_TGT corresponding to a luminance of an image at or after the display-on time T_DON based on the voltage control signal VCS (S130). The power manager 150 may change the voltage level of the initialization voltage VAINT from the initialization level L_INIT to the target level L_TGT in response to a rising edge of the voltage control signal VCS. The absolute value of the initialization level L_INIT may be less than an absolute value of the target level L_TGT. According to an embodiment, the target level L_TGT may be about −7 V to about −2 V.
According to an embodiment, a polarity of the initialization level L_INIT may be different from a polarity of the target level L_TGT. For example, when the target level L_TGT is less than 0 V, the initialization level L_INIT may be greater than 0 V.
Referring to
The power manager 150 may change the voltage level of the initialization voltage VAINT to an initialization level L_INIT before a power-off time T_POFF based on a voltage control signal VCS (S220). The power manager 150 may change the voltage level of the initialization voltage VAINT from the fixed level L_FXD to the initialization level L_INIT in response to a falling edge of the voltage control signal VCS.
The power manager 150 may change the voltage level of the initialization voltage VAINT to about 0 V at or after the power-off time T_POFF based on the voltage control signal VCS (S230). The power manager 150 may change the voltage level of the initialization voltage VAINT from the initialization level L_INIT to about 0 V in response to a rising edge of the voltage control signal VCS.
Referring to
The power manager 150 may change the voltage level of the initialization voltage VAINT to the initialization level L_INIT in a vertical porch period VP based on the voltage control signal VCS (S320). The power manager 150 may change the voltage level of the initialization voltage VAINT from the target level L_TGT to the initialization level L_INIT in response to a falling edge of the voltage control signal VCS.
Referring to
The processor 1110 may perform specific calculations or tasks. According to an embodiment, the processor 1110 may be a microprocessor, a central processing unit (CPU), or the like. The processor 1110 may be connected to other components through an address bus, a control bus, a data bus, and the like. According to an embodiment, the processor 1110 may also be connected to an expansion bus such as a peripheral component interconnect (PCI) bus. According to an embodiment, the processor 1110 may provide first image data (IMD1 of
The memory device 1120 may store data required for an operation of the electronic device 1000. For example, the memory device 1120 may include: a nonvolatile memory device such as an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), a flash memory, a phase change random access memory (PRAM), a resistance random access memory (RRAM), a nano floating gate memory (NFGM), a polymer random access memory (PoRAM), a magnetic random access memory (MRAM), or a ferroelectric random access memory (FRAM); or a volatile memory device such as a dynamic random access memory (DRAM), a static random access memory (SRAM), or a mobile DRAM.
The storage device 1130 may include a solid state drive (SSD), a hard disk drive (HDD), a CD-ROM, and the like. The I/O device 1140 may include: an input device such as a keyboard, a keypad, a touch pad, a touch screen, or a mouse; and an output device such as a speaker or a printer. The power supply 1150 may supply a power required for the operation of the electronic device 1000. The display device 1160 may be connected to other components through the buses or other communication links.
According to the display device 1160, an absolute value of a voltage level of an initialization voltage may be reduced at or after a power-on time and before a display-on time, at or after a display-off time and before a power-off time, or in a vertical porch period within a frame period, so that an amount of induced charges in a flexible substrate may be reduced, and a shift of a threshold voltage of a transistor may be reduced. Accordingly, display quality of an image displayed by the display device 1160 may be improved.
The display device according to the embodiments may be applied to a display device included in a computer, a notebook, a mobile phone, a smart phone, a smart pad, a PMP, a PDA, an MP3 player, or the like.
Although embodiments have been described with reference to the drawings, the embodiments are examples, and may be modified and changed by a person having ordinary skill in the art without departing from the scope and spirit of the following claims.
Number | Date | Country | Kind |
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10-2023-0100409 | Aug 2023 | KR | national |