The disclosure relates to a display device, and in particular to a touch display device having a sensing electrode.
As technology progresses, several information devices are being developed, such as mobile phones, tablet PCs, ultra-thin laptops, and satellite navigation. In addition to using a keyboard or mouse for keying in and control, a popular way to control information devices is by touch technology. The touch display device has a friendly and intuitive human-machine interface so that users of all ages may select or control their information devices by using fingers or a stylus outright.
One of these touch display devices is the in-cell touch display device, which has a sensing electrode disposed in the display panel (such as a liquid-crystal display panel or an organic light-emitting diode panel). However, the existing devices of in-cell touch display have not been satisfactory in every respect.
Therefore, an in-cell touch display device with improved qualities of the display and the touch-control is necessary in future.
The present disclosure provides a display device, including: a first substrate, wherein the first substrate includes: a plurality of scan lines disposed on the first substrate; a plurality of data lines disposed on the first substrate, wherein the plurality of the scan lines and the plurality of the data lines define a plurality of sub-pixels; and a sensing electrode disposed on the first substrate and having an opening; a second substrate disposed opposite the first substrate; and a display medium disposed between the first substrate and the second substrate, wherein the sensing electrode is disposed corresponding to at least two of the sub-pixels, and the opening is disposed corresponding to one of the scan lines or one of the data lines.
A detailed description is given in the following embodiments with reference to the accompanying drawings.
The disclosure may be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:
The display device of the present disclosure is described in detail in the following description. In the following detailed description, for purposes of explanation, numerous specific details and embodiments are set forth in order to provide a thorough understanding of the present disclosure. The specific elements and configurations described in the following detailed description are set forth in order to clearly describe the present disclosure. It will be apparent, however, that the exemplary embodiments set forth herein are used merely for the purpose of illustration, and the inventive concept may be embodied in various forms without being limited to those exemplary embodiments. In addition, the drawings of different embodiments may use like and/or corresponding numerals to denote like and/or corresponding elements in order to clearly describe the present disclosure. However, the use of like and/or corresponding numerals in the drawings of different embodiments does not suggest any correlation between different embodiments. In addition, in this specification, expressions such as “first material layer disposed on/over a second material layer”, may indicate the direct contact of the first material layer and the second material layer, or it may indicate a non-contact state with one or more intermediate layers between the first material layer and the second material layer. In the above situation, the first material layer may not be in direct contact with the second material layer.
It should be noted that the elements or devices in the drawings of the present disclosure may be present in any form or configuration known to those skilled in the art. In addition, the expression “a layer overlying another layer”, “a layer is disposed above another layer”, “a layer is disposed on another layer” and “a layer is disposed over another layer” may indicate that the layer is in direct contact with the other layer, or that the layer is not in direct contact with the other layer, there being one or more intermediate layers disposed between the layer and the other layer.
In addition, in this specification, relative expressions are used. For example, “lower”, “bottom”, “higher” or “top” are used to describe the position of one element relative to another. It should be appreciated that if a device is flipped upside down, an element that is “lower” will become an element that is “higher”.
The terms “about” and “substantially” typically mean +/−20% of the stated value, more typically +/−10% of the stated value, more typically +/−5% of the stated value, more typically +/−3% of the stated value, more typically +/−2% of the stated value, more typically +/−1% of the stated value and even more typically +/−0.5% of the stated value. The stated value of the present disclosure is an approximate value. When there is no specific description, the stated value includes the meaning of “about” or “substantially”.
It should be understood that, although the terms first, second, third etc. may be used herein to describe various elements, components, regions, layers, portions and/or sections, these elements, components, regions, layers, portions and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, portion or section from another region, layer or section. Thus, a first element, component, region, layer, portion or section discussed below could be termed a second element, component, region, layer, portion or section without departing from the teachings of the present disclosure.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It should be appreciated that, in each case, the term, which is defined in a commonly used dictionary, should be interpreted as having a meaning that conforms to the relative skills of the present disclosure and the background or the context of the present disclosure, and should not be interpreted in an idealized or overly formal manner unless so defined.
This description of the exemplary embodiments is intended to be read in connection with the accompanying drawings, which are to be considered part of the entire written description. The drawings are not drawn to scale. In addition, structures and devices are shown schematically in order to simplify the drawing.
In the description, relative terms such as “lower,” “upper,” “horizontal,” “vertical,”, “above,” “below,” “up,” “down,” “top” and “bottom” as well as derivative thereof (e.g., “horizontally,” “downwardly,” “upwardly,” etc.) should be construed to refer to the orientation as then described or as shown in the drawing under discussion. These relative terms are for convenience of description and do not require that the apparatus be constructed or operated in a particular orientation. Terms concerning attachments, coupling and the like, such as “connected” and “interconnected,” refer to a relationship wherein structures are secured or attached to one another either directly or indirectly through intervening structures, as well as both movable or rigid attachments or relationships, unless expressly described otherwise.
The term “substrate” refers to the substrate itself, or to a composite object that includes various elements, various electrical wires and various films formed over a substrate. However, the substrate is represented by a flat surface in order to simplify the drawing. The term “substrate surface” is meant to include the uppermost exposed layers on the substrate, such as a glass surface, an organic polymer surface, and insulating layer and/or metallurgy lines. The substrate may include glass, organic polymer, inorganic polymer, silicon, metal, or any other suitable materials.
In display devices, the electric field distribution at the inner portion of the sensing electrode are different from the electric field distribution at the edge of the sensing electrode. Therefore, the capacitance between the inner portion of the sensing electrode and the other elements is different from the capacitance between the edge of the sensing electrode and the other elements, which in turn results in light leakage of the display devices and decreases the display quality. In addition, if the sensing electrode overlaps with the gate line, data line or touch signal line, parasitic capacitance may result. Therefore, the shape and size of the sensing electrode would affect the parasitic capacitance at the inner portion and edge of the sensing electrode, and would make the parasitic capacitance at the inner portion of the sensing electrode differ from the parasitic capacitance at the edge of the sensing electrode. This would result in signal cross-talk between the electrodes, which in turn affects the image and touch-control performance.
The embodiments of the present disclosure make the electric field distribution at the inner portion of the sensing electrode similar to the electric field distribution at the edge of the sensing electrode. Therefore, the capacitance between the inner portion of the sensing electrode and the other elements may be similar to the capacitance between the edge of the sensing electrode and the other elements, which in turn reduces light leakage in the display devices and improves the display quality. In addition, the parasitic capacitance between the sensing electrode and the scan line, data line or touch signal line may be reduced, which in turn improves the image and touch-control performance.
In addition, the plurality of scan lines 104 and the plurality of data lines 106 define a plurality of sub-pixels 108. The first substrate 102 may include a plurality of sub-pixels 108. In addition, the substrate 102 may further include a plurality of thin film transistors 110 corresponding to sub-pixels 108. Two terminals of the thin film transistor 110 are electrically connected to the scan line 104 and the data line 106 respectively, as shown in
The data line 106 may provide the source signal to the sub-pixels 108 through the thin film transistors 110. The scan line (gate line) 104 may provide the scanning pulse signal to the sub-pixels 108 through the thin film transistors 110 and control the sub-pixels 108 in coordination with the aforementioned source signal.
Still referring to
At least one of the sensing electrodes 112 has an opening 114. The opening 114 is disposed corresponding to a portion of the scan lines 104 or a portion of the data lines 106. The opening 114 is disposed in the region corresponding to the sensing electrodes 112. The portion of the scan lines 104 or the portion of the data lines 106 which the opening 114 corresponds to is the portion of the scan lines 104 which the first spacing 55 does not correspond to or the portion of the data lines 106 which the second spacing S6 does not correspond to. In this embodiment, the opening 114 is the branch portion of the first spacing 55 which extends along the second direction A2 and is not the CS portion. Alternatively, the opening 114 is the branch portion of the second spacing S6 which extends along the first direction A1 and is not the CS portion. In other embodiments, the opening 114 is disposed in the region corresponding to the sensing electrodes 112. And the opening 114 does not connect to the first spacing S5 and second spacing S6.
The capacitance resulting from the overlap between the sensing electrodes 112 and the scan lines 104 or data lines 106 is different from the capacitance between the edge of the sensing electrode and the scan lines 104 or data lines 106. In the embodiments of the present disclosure, by disposing the opening 114 corresponding to the scan lines 104 or data lines 106, most portion in the sensing electrodes 112 may bypass the scan lines 104 or data lines 106, such that the electric field distribution at most of the inner portion of the sensing electrode may be similar to the electric field distribution at the edge of the sensing electrode. Therefore, the capacitance between the inner portion of the sensing electrode and the other elements may be similar to the capacitance between the edge of the sensing electrode and the other elements, which in turn reduces light leakage in the display device 100 and improves the display quality. On the other hand, since the overlap between the sensing electrodes 112 and the scan lines 104 or data lines 106 is decreased, the parasitic capacitance between the sensing electrode 112 and the scan line 104 or data line 106 may be reduced, which in turn improves the image and touch-control performance.
In particular, referring to
In addition, in some embodiments, the connection portion 116 is disposed at the center portion of the four sub-sensing electrodes 112S which are adjacent to each other. For example, in this embodiment, the sensing electrode 112 is formed by four sub-sensing electrodes 112S which are adjacent to each other, and the connection portion 116 is disposed at the center portion of the four sub-sensing electrodes 112S which are adjacent to each other. In addition, in this embodiment, each sub-sensing electrode 112S is disposed corresponding to one sub-pixel 108.
Except for the connection portion 116, the region of the sensing electrodes 112 corresponding to the scan line 104 and/or data lines 106 has the opening 114. Thereby, the electric field distribution between the most region of the inner portion of the sensing electrode 112 and the scan line 104 or data lines 106 may be similar to the electric field distribution between the edge of the sensing electrode 112 and the scan line 104 or data lines 106. Therefore, the capacitance between the inner portion of the sensing electrode 112 and the other elements may be similar to the capacitance between the edge of the sensing electrode 112 and the other elements, which in turn reduces light leakage in the display device 100 and improves the display quality. On the other hand, since the overlap between the sensing electrode 112 and the scan lines 104 or data lines 106 is decreased, the parasitic capacitance between the sensing electrode 112 and the scan line 104 or data line 106 may be reduced, which in turn improves the image and touch-control performance. In some embodiments of the present disclosure, the area of the sensing electrode 112 which has the opening 114 is about 50%-90% times the area of the sensing electrode 112 which does not have the opening 114. In other words, the ratio of the area of the sensing electrode 112 to the area of the opening 114 ranges from about 1 to 9.
In addition, the first substrate 102 further includes a touch signal line 118. One terminal of the touch signal line 118 is electrically connected to the sensing electrode 112 through a via 120, and another terminal of the touch signal line 118 is electrically connected to an IC bonding region 113. It should be noted that, the position of the touch signal line 118 is not limited to that shown in
It should be noted that the exemplary embodiment set forth in
In addition, it should be noted that in order to clearly describe the present disclosure,
The material of the gate electrode 124 may include, but is not limited to, amorphous silicon, poly-silicon, one or more metal, metal nitride, conductive metal oxide, or a combination thereof. The metal may include, but is not limited to, molybdenum, tungsten, titanium, tantalum, platinum, or hafnium. The metal nitride may include, but is not limited to, molybdenum nitride, tungsten nitride, titanium nitride or tantalum nitride. The conductive metal oxide may include, but is not limited to, ruthenium oxide or indium tin oxide. The conductive material layer may be formed by the previously described chemical vapor deposition (CVD) process, sputtering, resistive thermal evaporation, electron beam evaporation, or any other suitable method. For example, in one embodiment, the amorphous silicon conductive material layer or poly-silicon conductive material layer may be deposited and formed by low-pressure chemical vapor deposition at about 525° C.˜650° C. The thickness of the amorphous silicon conductive material layer or poly-silicon conductive material layer may range from about 1000 Å to 10000 Å.
The material of the gate dielectric layer 126 may include, but is not limited to, silicon oxide, silicon nitride, silicon oxynitride, high-k material, any other suitable dielectric material, or a combination thereof. The high-k material may include, but is not limited to, metal oxide, metal nitride, metal silicide, transition metal oxide, transition metal nitride, transition metal silicide, transition metal oxynitride, metal aluminate, zirconium silicate, zirconium aluminate. For example, the material of the high-k material may include, but is not limited to, LaO, AlO, ZrO, TiO, Ta2O5, Y2O3, SrTiO3(STO), BaTiO3(BTO), BaZrO, HfO2, HfO3, HfZrO, HfLaO, HfSiO, HfSiON, LaSiO, AlSiO, HfTaO, HfTiO, HfTaTiO, HfAlON, (Ba,Sr)TiO3(BST), Al2O3, any other suitable high-k dielectric material, or a combination thereof. The gate dielectric layer may be formed by chemical vapor deposition or spin-on coating. The chemical vapor deposition may include, but is not limited to, low pressure chemical vapor deposition (LPCVD), low temperature chemical vapor deposition (LTCVD), rapid thermal chemical vapor deposition (RTCVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), or any other suitable method.
The thin film transistors 110 further includes a semiconductor layer 128 disposed on the gate dielectric layer 126. The semiconductor layer 128 overlaps with the gate electrode 124. The source electrode 130 and drain electrode 132 of the thin film transistors 110 are disposed at opposite sides of the semiconductor layer 128, respectively. The source electrode 130 and drain electrode 132 of the thin film transistors 110 overlap with the portions of the semiconductor layer 128 at the opposite sides, respectively. In addition, the source electrode 130 is a portion of the data line 106.
The semiconductor layer 128 may include an element semiconductor which may include silicon, germanium; a compound semiconductor which may include gallium nitride (GaN), silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide and/or indium antimonide; an alloy semiconductor which may include SiGe alloy, GaAsP alloy, AlInAs alloy, AlGaAs alloy, GaInAs alloy, GaInP alloy and/or GaInAsP alloy; or a combination thereof.
The source electrode 130 and drain electrode 132 may include, but is not limited to, copper, aluminum, molybdenum, tungsten, gold, cobalt, nickel, platinum, titanium, iridium, rhodium, an alloy thereof, a combination thereof, or any other conductive material. For example, the source electrode 130 and drain electrode 132 may include three-layered structure such as Mo/Al/Mo or Ti/Al/Ti. In other embodiments, the source electrode 130 and drain electrode 132 includes a nonmetal material. The source electrode 130 and drain electrode 132 may include any conductive material. The material of the source electrode 130 and drain electrode 132 may be formed by chemical vapor deposition (CVD), sputtering, resistive thermal evaporation, electron beam evaporation, or any other suitable method. In some embodiments, the materials of the source electrode 130 and drain electrode 132 may be the same, and the source electrode 130 and drain electrode 132 may be formed by the same deposition steps. However, in other embodiments, the source electrode 130 and drain electrode 132 may be formed by different deposition steps, and the materials of the source electrode 130 and drain electrode 132 may be different from each other.
Still referring to
In some embodiments of the present disclosure, the touch signal line 118 is disposed on the first insulating layer 134. The touch signal line 118 may include, but is not limited to, copper, aluminum, molybdenum, tungsten, gold, cobalt, nickel, platinum, titanium, iridium, rhodium, an alloy thereof, a combination thereof, or any other conductive material. For example, the touch signal line 118 may include three-layered structure such as Mo/Al/Mo or Ti/Al/Ti. In other embodiments, the touch signal line 118 includes a nonmetal material. The touch signal line 118 may include any conductive material. The material of the touch signal line 118 may be formed by chemical vapor deposition (CVD), sputtering, resistive thermal evaporation, electron beam evaporation, or any other suitable method.
Subsequently, still referring to
Subsequently, a planarization layer 136 may be optionally disposed on the second insulating layer 138. The material of the planarization layer 136 may include, but is not limited to, organic insulating materials (such as photosensitive resins) or inorganic insulating materials (such as silicon nitride, silicon oxide, silicon oxynitride, silicon carbide, aluminum oxide, or a combination thereof).
The sensing electrodes 112 (or the sub-sensing electrode 112S) are disposed on the planarization layer 136, as shown in
Still referring to
In addition, the first substrate 102 includes opening 142. The opening 142 extends downward from the top surface 140S of the third insulating layer 140 to the drain electrode 132 and exposes a portion of the surface 132S of the drain electrode 132.
The first substrate 102 further includes a pixel electrode 144 disposed on the third insulating layer 140 and electrically connected to the drain electrode 132. In particular, the pixel electrode 144 is disposed on a portion of the third insulating layer 140 and extends into the opening 142 to electrically connect the drain electrode 132.
In addition, still referring to
The display device 100 may include, but is not limited to, a touch liquid-crystal display such as a thin film transistor liquid-crystal display. The liquid-crystal display may include, but is not limited to, a twisted nematic (TN) liquid-crystal display, a super twisted nematic (STN) liquid-crystal display, a double layer super twisted nematic (DSTN) liquid-crystal display, a vertical alignment (VA) liquid-crystal display, an in-plane switching (IPS) liquid-crystal display, a cholesteric liquid-crystal display, a blue phase liquid-crystal display, fringe field switching liquid-crystal display, or any other suitable liquid-crystal display. In some other embodiments of the present disclosure, the display device 100 may include organic light-emitting diode display, inorganic light-emitting diode display or electro-phoretic display.
In some embodiments, the second substrate 148 serves as a color filter substrate. In particular, the second substrate 148, which serves as a color filter substrate, may include a substrate 152, light-shielding layers 154 disposed on the substrate 152, a color filter layer 156 disposed between the light-shielding layers 154, and a planarization layer 158 covering the light-shielding layer 154 and the color filter layer 156.
The substrate 152 may include a transparent substrate such as a glass substrate, a ceramic substrate, a plastic substrate, or any other suitable transparent substrate. The light-shielding layer 154 may include, but is not limited to, black photoresist, black printing ink, black resin. The color filter layer 156 may include a red color filter layer, a green color filter layer, a blue color filter layer, or any other suitable color filter layer.
The display device 100 further includes a spacer 160 disposed between the first substrate 102 and second substrate 148. The spacer 160 is the main structure used to space the first substrate 102 apart from the second substrate 148 to prevent the first substrate 102 from touching the second substrate 148 when the display device 100 is pressed or touched and to keep a constant distance between the first substrate 102 and second substrate 148.
As shown in
It should be noted that the exemplary embodiment set forth in
Note that the same or similar elements or layers corresponding to those of the display device are denoted by like reference numerals. The same or similar elements or layers denoted by like reference numerals have the same meaning and will not be repeated for the sake of brevity.
The thin film transistors 110 further include a semiconductor layer 128 disposed on the gate dielectric layer 126. The semiconductor layer 128 overlaps with the gate electrode 124. The source electrode 130 and drain electrode 132 of the thin film transistors 110 are disposed at opposite sides of the semiconductor layer 128, respectively. The source electrode 130 and drain electrode 132 of the thin film transistors 110 overlap with the portions of the semiconductor layer 128 at the opposite sides, respectively. In addition, the source electrode 130 is a portion of the data line 106.
Still referring to
Subsequently, a planarization layer 136 may be optionally disposed on the second insulating layer 138. The material of the planarization layer 136 may include, but is not limited to, organic insulating materials (such as photosensitive resins) or inorganic insulating materials (such as silicon nitride, silicon oxide, silicon oxynitride, silicon carbide, aluminum oxide, or a combination thereof).
The first substrate 102 further includes a pixel electrode 144 disposed on the planarization layer 136 and electrically connected to the drain electrode 132. In particular, the pixel electrode 144 is disposed on a portion of the planarization layer 136 and extends into the opening 142 to electrically connect the drain electrode 132.
The touch signal line 118 is disposed on the planarization layer 136. The touch signal line 118 may include, but is not limited to, copper, aluminum, molybdenum, tungsten, gold, cobalt, nickel, platinum, titanium, iridium, rhodium, an alloy thereof, a combination thereof, or any other conductive material. For example, the touch signal line 118 may include three-layered structure such as Mo/Al/Mo or Ti/Al/Ti. In other embodiments, the touch signal line 118 includes a nonmetal material. The touch signal line 118 may include any conductive material.
Subsequently, still referring to
The sensing electrodes 112 (or sub-sensing electrode 112S) are disposed on the second insulating layer 138, as shown in
In addition, still referring to
In some embodiments, the second substrate 148 serves as a color filter substrate. In particular, the second substrate 148, which serves as a color filter substrate, may include a substrate 152, light-shielding layers 154 disposed on the substrate 152, a color filter layer 156 disposed between the light-shielding layers 154, and a planarization layer 158 covering the light-shielding layer 154 and the color filter layer 156.
As shown in
Note that the same or similar elements or layers are denoted by like reference numerals. The same or similar elements or layers denoted by like reference numerals have the same meaning and will not be repeated for the sake of brevity.
As shown in
Still referring to
In addition, in the embodiment wherein the touch signal line 118 substantially overlaps with the data line 106, the second-direction opening 114B is also disposed corresponding to the touch signal line 118.
The embodiments of the present disclosure have the first-direction opening 114A disposed corresponding to the region between two adjacent gate electrodes 124, and have the second-direction opening 114B disposed corresponding to one of the data lines 106. Therefore, most regions in the sensing electrodes 112 and at the edge of the sensing electrode 112 corresponding to the scan lines 104 or data lines 106 have the opening 114. Thereby, the electric field distribution at most of the inner portion of the sensing electrode 112 may be similar to the electric field distribution at the edge of the sensing electrode 112. Furthermore, the capacitances between the inner portion of the sensing electrode 112 and the other elements may be similar to the capacitances between the edge of the sensing electrode 112 and the other elements. That is, both two designs decline the differences between the region and edge of the sensing electrode 112. Moreover, the image and touch-control performances may be improved at which the parasitic capacitances between the sensing electrode 112 and the scan line 104, data line 106 or the touch signal line 118 are reduced due to the decrease in the overlap region between the sensing electrode 112 and the scan lines 104, data lines 106 or the touch signal line 118.
In addition, in some embodiments, two adjacent sensing electrodes 112 are separated apart by a first spacing S5 and a second spacing S6. The width W1 of the first-direction opening 114A is equal to the first distance GS1 of the first spacing S5 along the second direction A2, as shown in
In addition, in some embodiments, two sides S1 and S2 of the first-direction opening 114A are separated from each other along the first direction A1 and respectively aligned to the edges E1 and E2 of the two gate electrodes 124, in the first direction A1, to which the first-direction opening 114A corresponds, as shown in
In other embodiments, along the first direction A1, the distance between the two sides S1 and S2 may be smaller than or greater than the distance between the edges E1 and E2. In some embodiments, the side S1 may align to the edge E1, whereas the side S2 may not align to the edge E2. Alternatively, in some other embodiments, the side S2 may align to the edge E2, whereas the side S1 may not align to the edge E1. Alternatively, in some other embodiments, the side S1 may not align to the edge E1, and the side S2 may not align to the edge E2.
In addition, in some embodiments, the second-direction opening 114B is disposed between two adjacent scan lines 104. In addition, in some embodiments, the width W3 of the second-direction opening 114B is the same as the second distance GS2 of the second spacing G2 along the first direction A1. Regarding the array of sensing electrode 112, this design could afford to alleviate differences between adjacent sensing electrodes 112. Thereby, light leakage and display quality in the display device 500 are improved radically.
In addition, in some embodiments, the two sides S3 and S4 of the second-direction opening 114B are separated from each other along the second direction A2 and respectively aligned to the edges E3 and E4 of the two scan lines 104, in the second direction A2, to which the second-direction opening 114B corresponds, as shown in
In other embodiments, along the second direction A2, the distance between the two sides S3 and S4 may be smaller than or greater than the distance between the edges E3 and E4. In some embodiments, the side S3 may align to the edge E3, whereas the side S4 may not align to the edge E4. Alternatively, in some other embodiments, the side S4 may align to the edge E4, whereas the side S3 may not align to the edge E3. Alternatively, in some other embodiments, the side S3 may not align to the edge E3, and the side S4 may not align to the edge E4.
As shown in
It should be noted that the exemplary embodiments set forth in
The manifest difference between the embodiments shown in
As shown in
As shown in
In this embodiment, the first spacing S5 includes a plurality of first portions HS1 extending along the first direction A1 and a plurality of second portions VS1 extending along the second direction A2. The first portions HS1 are disposed corresponding to the scan lines 104, and the second portions VS1 are disposed corresponding to the data lines 106. The first portion HS1 may correspond to the width of at least one pixel 108 along the first direction A1. The second portion VS1 may correspond to the width of at least one pixel 108 along the second direction A2. The first portions HS1 and second portions VS1 connect to each other to form the first spacing S5.
In this embodiment, the second spacing S6 includes a plurality of third portions HS2 extending along the first direction A1 and a plurality of fourth portions VS2 extending along the second direction A2. The third portions HS2 are disposed corresponding to the scan lines 104, and the fourth portions VS2 are disposed corresponding to the data lines 106. The third portion HS2 may correspond to the width of at least one pixel 108 along the first direction A1. The fourth portion VS2 may correspond to the width of at least one pixel 108 along the second direction A2. The third portions HS2 and fourth portions VS2 connect to each other to form the second spacing S6.
However, in some other embodiments of the present disclosure, the configuration of the first spacing S5 and second spacing S6 is not limited to that shown in
In some embodiments of the present disclosure, the first spacing S5 extending along the first direction A1 is disposed corresponding to 3-10 of the scan lines 104. The two first portions HS1 at the two edges of the first spacing S5 along the second direction A2 are spaced apart by 3-10 of the scan lines 104. In addition, the second spacing S6 extending along the second direction A2 is disposed corresponding to 3-10 of the data lines 106. The two fourth portions VS2 at the two edges of the second spacing S6 along the first direction A1 are spaced apart by 3-10 of the data lines 106.
Since the first spacing S5 between two sensing electrodes 112 is disposed corresponding to the plurality of scan lines 104, and the second spacing S6 between two sensing electrodes 112 is disposed corresponding to the plurality of data lines 106, the edges of the sensing electrodes 112 are also disposed corresponding to the plurality of scan lines 104 and/or the plurality of data lines 106. Therefore, the capacitance between the edges of the sensing electrodes 112 and the scan lines 104 or data lines 106, which is also referred as gate loading, may be equally distributed to the plurality of scan lines 104 and/or the plurality of data lines 106. Thereby, the plurality of scan lines 104 and/or the plurality of data lines 106 may be disposed under similar electric field circumstances, which in turn reduces light leakage in the display device 800 and improves the display quality.
As shown in
Since the sensing electrode 112A completely covers the main line portion 104A, all the main line portions 104A in the display device 900 may be disposed under similar electric field circumstances, which in turn reduces light leakage in the display device 900 and improves the display quality.
In addition, as shown in
It should be noted that, if the sensing electrode 112A, which is disposed corresponding to the main line portion 104A of the scan line 104, does not completely cover the main line portion 104A, the main line portions 104A in the display device 900 may not all be disposed under similar electric field circumstances. Therefore, the display quality cannot be effectively improved. However, if the top edge 112AT of the sensing electrode 112A, which is disposed corresponding to the main line portion 104A of the scan line 104, exceeds the top edge 124T of the gate electrode 124, the aperture ratio may be decreased.
In summary, the embodiments of the present disclosure make the electric field distribution at the inner portion of the sensing electrode similar to the electric field distribution at the edge of the sensing electrode. Therefore, the capacitance between the inner portion of the sensing electrode and the other elements may be similar to the capacitance between the edge of the sensing electrode and the other elements, which in turn reduces light leakage in the display devices and improves the display quality. On the other hand, since the overlap between the sensing electrode 112 and the scan lines 104, data lines 106 or the touch signal line 118 is decreased, the parasitic capacitance between the sensing electrode 112 and the scan line 104, data line 106 or the touch signal line 118 may be reduced, which in turn improves the image and touch-control performance.
In addition, it should be noted that the drain and source mentioned above in the present disclosure are switchable since the definition of the drain and source is related to the voltage connecting thereto.
Note that the above element sizes, element parameters, and element shapes are not limitations of the present disclosure. Those skilled in the art can adjust these settings or values according to different requirements. It is understood that the display device and method for manufacturing the same of the present disclosure are not limited to the configurations of
Although some embodiments of the present disclosure and their advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure as defined by the appended claims. For example, it will be readily understood by those skilled in the art that many of the features, functions, processes, and materials described herein may vary while remaining within the scope of the present disclosure. Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure of the present disclosure, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present disclosure. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps.
Number | Date | Country | Kind |
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104138431 | Nov 2015 | TW | national |
This application claims priority to Taiwan Patent Application No. 104138431, filed on Nov. 20, 2015. This application also claims the benefit of the following provisional U.S. provisional applications: application No. 62/171,592 filed on Jun. 5, 2015, application No. 62/174,728 filed on Jun. 12, 2015, application No. 62/193,787 filed on Jul. 17, 2015, and patent Application No. 62/202,570 filed on Aug. 7, 2015, the entireties of which are incorporated by reference herein.
Number | Date | Country | |
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62202570 | Aug 2015 | US | |
62193787 | Jul 2015 | US | |
62174728 | Jun 2015 | US | |
62171592 | Jun 2015 | US |