The disclosure relates to display devices.
Patent Literature 1 discloses an impulse drive technique to address blurry moving images in a display device including light-emitting elements.
Performing impulse drive in a display device including light-emitting elements as in Patent Literature 1 undesirably prompts degradation of the light-emitting elements due to high-luminance emission.
The disclosure, in one aspect thereof, is directed to a display device including: a plurality of data signal lines connected to a data signal line drive circuit; a plurality of scan signal lines connected to a scan signal line drive circuit and intersecting with the plurality of data signal lines; and a plurality of pixel circuits at respective intersections of the plurality of data signal lines and the plurality of scan signal lines, wherein each of the plurality of pixel circuits includes: a current-driven light-emitting element; a drive transistor configured to control an electric current for the light-emitting element; a switching circuit; and a first capacitive element and a second capacitive element both connected to the switching circuit, and the switching circuit connects the first capacitive element to a control terminal of the drive transistor in a first period that falls within a single frame period and connects the second capacitive element to the control terminal of the drive transistor in a second period that falls within the single frame period and that follows the first period.
The disclosure, in an aspect thereof, can improve the quality of displays (especially, moving image displays) while restraining degradation of the light-emitting elements.
In the display area DA are there provided a plurality of pixel circuits (including a pixel circuit PKn), a plurality of data signal lines (including a data signal line DL), a plurality of scan signal lines (including a scan signal line Gn) intersecting with the plurality of data signal lines, and a plurality of switching signal lines (including a switching signal line Kn). The plurality of data signal lines is connected to the data signal line drive circuit SD. The plurality of scan signal lines is connected to the scan signal line drive circuit GD. The plurality of switching signal lines is connected to the switching signal generation circuit KC.
Referring to
The substrate 12 is a glass substrate or a flexible base member composed primarily of a polyimide or other like resin. The substrate 12 may include, for example, two polyimide films and an inorganic film sandwiched between these polyimide films. The barrier layer (undercoat layer) 3 is an inorganic insulation layer for preventing foreign objects such as water and oxygen from reaching inside and may contain, for example, silicon nitride or silicon oxide.
Still referring to
The semiconductor layer PS is, for example, a low-temperature polysilicon (LTPS). A transistor TR is constructed including the gate electrode GE and the semiconductor layer PS. The semiconductor layer PS may be a conductor, except for the channel of the transistor.
The first metal layer, the second metal layer, and the third metal layer are made of, for example, a monolayer or multilayer film of at least one of metals of aluminum, tungsten, molybdenum, tantalum, chromium, titanium, and copper.
The gate insulation film 16, the first interlayer insulation film 18, and the second interlayer insulation film 20 may be made of, for example, a silicon oxide (SiOx) film or a silicon nitride (SiNx) film formed by CVD or a stack of these films. The planarization film 21 may be made of, for example, an organic material, such as a polyimide or an acrylic resin, that can be provided by printing or coating technology.
The light-emitting element layer 5 includes: a first electrode (anode) 22 overlying the planarization film 21; an insulating edge cover film 23 covering the edge of the first electrode 22; an OLED (organic light-emitting diode) layer 24 overlying the edge cover film 23; and a second electrode (upper electrode) 25 overlying the OLED layer 24. The edge cover film 23 is formed by patterning an applied organic material such as a polyimide or an acrylic resin by photolithography.
Referring again to
The light-emitting element X may be, for example, an OLED (organic light-emitting diode) including an organic layer as a light-emitting layer or a QLED (quantum-dot light-emitting diode) including a quantum-dot layer as a light-emitting layer.
The OLED layer 24 includes, for example, a stack of a hole injection layer, a hole transport layer, the light-emitting layer EK, an electron transport layer, and an electron injection layer, all of which are provided in this order when viewed from below. The light-emitting layer is provided in openings in the edge cover film 23 (for each subpixel) in an insular manner by vapor deposition, inkjet technology, or photolithography. The other layers are provided in an insular manner or across the display area (as a common layer). One or more of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be omitted.
The first electrode 22 includes, for example, a stack of ITO (indium tin oxide) and either Ag (silver) or a Ag-containing alloy, so that the first electrode 22 can reflect light. The second electrode 25 (cathode) may be made of, for example, a thin film of a metal such as a magnesium-silver alloy, so that the second electrode 25 can transmit light.
If the light-emitting element X is an OLED, holes and electrons recombine in the light-emitting layer EK owing to the drive current flowing between the first electrode 22 and the second electrode 25, to produce excitons that fall to the ground state to emit light. If the light-emitting element X is a QLED, holes and electrons recombine in the light-emitting layer EK owing to the drive current flowing between the first electrode 22 and the second electrode 25, to produce excitons that transit from the conduction band energy level (conduction band) to the valence band energy level (valence band) of quantum dots to emit light.
The sealing layer 6, covering the light-emitting element layer 5, prevents foreign objects such as water and oxygen from reaching the light-emitting element layer 5 and may include, for example, two inorganic sealing films 26 and 28 and an organic film 27 sandwiched between the inorganic sealing films 26 and 28.
Each light-emitting element X has an anode connected to a HIGH power supply line PL (ELVDD line) via the drive transistor TRx and a cathode connected to a LOW power supply line (ELVSS line).
The drive transistor TRx has a gate terminal Nd connected to a first electrode of the first capacitive element C1 via the first transistor TR1. The first electrode of the first capacitive element C1 is connected to the data signal line DL via the third transistor TR3. The first capacitive element C1 has a second electrode connected to a first capacitor signal line CAn.
The gate terminal Nd of the drive transistor TRx is connected to a first electrode of the second capacitive element C2 via the second transistor TR2. The first electrode of the second capacitive element C2 is connected to the data signal line DL via the fourth transistor TR4. The second capacitive element C2 has a second electrode connected to a second capacitor signal line CBn.
The first transistor TR1 and the second transistor TR2 have the gate terminals thereof connected to the switching signal line Kn. The third transistor TR3 and the fourth transistor TR4 have the gate terminals thereof connected to the current-stage scan signal line Gn. The switching signal line Kn, the first capacitor signal line CAn, and the second capacitor signal line CBn extend parallel to the scan signal line Gn.
A switching signal KS fed to the switching signal line Kn is HIGH in a first period T1 that falls within a single frame period FT and that follows a select period of the scan signal line Gn (active period of a gate pulse GPn) and LOW in a second period T2 that falls within a single frame period FT and that follows the first period T1. As a result of this particular arrangement, the switching circuit SW connects the first capacitive element C1 to a control terminal Nd of the drive transistor TRx in the first period T1 and connects the second capacitive element C2 to the control terminal Nd of the drive transistor TRx in the second period T2. The first period T1 and the second period T2, as an example, have the same length of time, and both of them are shorter than 1/60 seconds.
Both a first capacitor signal CS1 fed to the first capacitor signal line CAn and a second capacitor signal CS2 fed to the second capacitor signal line CBn periodically toggle between a first level (LOW) and a second level (HIGH) that is higher than the first level. The first level and the second level have a median value of Vc.
In
It is preferred that the following inequality hold to restrain the degradation of the light-emitting element X:
Signal Delay on Data Signal Line DL (Charge Period)<Period of First and Second Capacitor Signals CS1 and CS2<Signal Delay for Light-Emitting Element X (Rising Period of Electric Current).
Accordingly, when the pixel data Dn is grayscale, the effective current through the light-emitting element X is larger in the first period T1 than in the second period T2, and the effective luminance of the light-emitting element X is higher in the first period T1 than in the second period T2. The first period is a bright period, the second period is a dark period, and the average luminance of the light-emitting element X over the first period and the second period is the luminance of the pixel circuit PKn as reproduced from the pixel data Dn, in Embodiment 1.
In relation to the first capacitor signal line CAn and the second capacitor signal line CBn both connected to the pixel circuit PKn (current stage), a first capacitor signal line CAn+1 and a second capacitor signal line CBn+1 both connected to a pixel circuit PKn+1 (first succeeding stage), a first capacitor signal line CAn+2 and a second capacitor signal line CBn+2 both connected to a pixel circuit PKn+2 (second succeeding stage), and a first capacitor signal line CAn+3 and a second capacitor signal line CBn+3 both connected to a pixel circuit PKn+3 (third succeeding stage),
The capacitor signal (first capacitor signal CS1) on the first capacitor signal line CAn is LOW, and the capacitor signal (second capacitor signal CS2) on the second capacitor signal line CBn is HIGH, in the active period of the gate pulse GPn. The capacitor signal on the first capacitor signal line CAn+1 is LOW, and the capacitor signal on the second capacitor signal line CBn+1 is HIGH, in the active period of a gate pulse GPn+1. The capacitor signal on the first capacitor signal line CAn+2 is LOW, and the capacitor signal on the second capacitor signal line CBn+2 is HIGH, in the active period of a gate pulse GPn+2. The capacitor signal on the first capacitor signal line CAn+3 is LOW, and the capacitor signal on the second capacitor signal line CBn+3 is HIGH, in the active period of a gate pulse GPn+3. The pixel circuits PKn, PKn+1, PKn+2, and PKn+3 are connected to the switching signal lines Kn, Kn+1, Kn+2, and Kn+3 respectively.
These connections cause the first period T1 to be a bright period and the second period T2 to be a dark period for each pixel circuit (PKn, PKn+1, PKn+2, and PKn+3) as shown in
These connections cause the first period T1 to be a bright period and the second period T2 to be a dark period for the pixel circuits PKn and PKn+1 and cause the first period T1 to be a dark period and the second period T2 to be a bright period for the pixel circuits PKn+2 and PKn+3, as shown in
Half the period of the first capacitor signal CS1 and the second capacitor signal CS2 (the period in which the signal stays either HIGH or LOW), in Embodiment 1, is preferably shorter than the rising period of the electric current for the light-emitting element X. This setting is effective to restrain the degradation of the light-emitting element X. Half the period of the first capacitor signal CS1 and the second capacitor signal CS2 is, for example, equal to an integral multiple of the horizontal scan period (1H).
The frame frequency (rewrite frequency), in Embodiment 1, is equal to the frequency of the input video signal. The frequency of the switching signal KS (e.g., the reciprocal of T1=T2) is equal to N times the frame frequency (e.g., 2 to 8 times the frame frequency) where N is a natural number greater than or equal to 2.
A constant voltage diode may be inserted between the cathode of the light-emitting element X and the gate terminal Nd of the drive transistor TRx in Embodiment 1 shown in
The switching signal line KAn is active (HIGH) in the first period T1 and the select period of the scan signal line Gn (in the period in which the gate pulse GPn is rising) and goes inactive (LOW) at the end of the first period T1 (at the start of the second period T2). The switching signal line KBn is active (HIGH) in the select period of the scan signal line Gn, goes inactive (LOW) at the start of the first period T1, and goes active (HIGH) at the end of the first period T1 (at the start of the second period T2).
The description has so far assumed that both the first transistor TR1 and the second transistor TR2 are of N type. Alternatively, both the first transistor TR1 and the second transistor TR2 may be of P type. The first transistor TR1 and the second transistor TR2 being of the same polarity type in this manner simplify the process of producing the transistors.
The drive transistor TRx has a gate terminal Nd connected to a first electrode of the first capacitive element C1 via the first transistor TR1. The first electrode of the first capacitive element C1 is connected to the data signal line DL via the third transistor TR3. The first capacitive element C1 has a second electrode connected to the first capacitor signal line CAn.
The gate terminal Nd of the drive transistor TRx is connected to a first electrode of the second capacitive element C2 via the second transistor TR2. The first electrode of the second capacitive element C2 is connected to the data signal line DL via the fourth transistor TR4. The second capacitive element C2 has a second electrode connected to the second capacitor signal line CBn.
The gate terminal Nd of the drive transistor TRx is connected to a first electrode of a first capacitive element C3 via the fifth transistor TR5. The third capacitive element C3 has a first electrode connected to the data signal line DL via the seventh transistor TR7 and a second electrode connected to the third capacitor signal line CCn.
The gate terminal Nd of the drive transistor TRx is connected to a first electrode of the fourth capacitive element C4 via the sixth transistor TR6. The first electrode of the fourth capacitive element C4 is connected to the data signal line DL via the eighth transistor TR8. The fourth capacitive element C4 has a second electrode connected to the fourth capacitor signal line CDn.
The first transistor TR1 has a gate terminal connected to a switching signal line KAn. The second transistor TR2 has a gate terminal connected to a switching signal line KBn. The fifth transistor TR5 has a gate terminal connected to a switching signal line KCn. The sixth transistor TR6 has a gate terminal connected to a switching signal line KDn. The third transistor TR3, the fourth transistor TR4, the seventh transistor TR7, and the eighth transistor TR8 each have a gate terminal connected to the current-stage scan signal line Gn.
The first capacitor signal line CAn is connected to a first main line M1. The second capacitor signal line CBn is connected to a second main line M2. The third capacitor signal line CCn is connected to a fifth main line M5. The fourth capacitor signal line CDn is connected to a sixth main line M6.
The switching signal line KAn has a HIGH electrical potential, and the first capacitor signal CS1 is HIGH, in the first period T1. The switching signal line KBn has a HIGH electrical potential, and the second capacitor signal CS2 is LOW, in the second period T2. The switching signal line KCn has a HIGH electrical potential, and the third capacitor signal CS3 is HIGH, in a third period T3. The switching signal line KDn has a HIGH electrical potential, and the fourth capacitor signal CS4 is LOW, in the fourth period T4. These settings cause the first period T1 to be a bright period, the second period T2 to be a dark period, the third period T3 to be a bright period, and the fourth period T4 to be a dark period, thereby achieving quadruple-speed drive.
The drive transistor TRx has a gate terminal Nd connected to an initialization power supply line IL via the initialization transistor TRi, a source terminal connected to the data signal line DL via the write control transistor TRw and also to a HIGH power supply line PL via the power supply transistor TRp, and a drain terminal connected to the anode of the light-emitting element X via the light emission control transistor TRe and also to the gate terminal Nd of the drive transistor TRx via the compensation transistor TRs. The initialization power supply line IL and the cathode (common electrode) of the light-emitting element X are fed with, for example, a LOW power supply voltage (ELVSS).
The gate terminal Nd of the drive transistor TRx is connected to a first electrode of the first capacitive element C1 via the first transistor TR1. The first capacitive element C1 has a second electrode connected to the first capacitor signal line CAn.
The gate terminal Nd of the drive transistor TRx is connected to a first electrode of the second capacitive element C2 via the second transistor TR2 and also via the setting transistor TRj. The second capacitive element C2 has a second electrode connected to the second capacitor signal line CBn.
The first transistor TR1 and the second transistor TR2 have the gate terminals thereof connected to the switching signal line Kn. The switching signal line Kn, the first capacitor signal line CAn, and the second capacitor signal line CBn extend parallel to the scan signal line Gn.
The switching signal KS fed to the switching signal line Kn, as shown in
In
Accordingly, when the pixel data Dn is grayscale, the effective current through the light-emitting element X is larger in the first period T1 than in the second period T2, and the effective luminance of the light-emitting element X is higher in the first period T1 than in the second period T2. The first period is a bright period, the second period is a dark period, and the average luminance of the light-emitting element X over the first period and the second period is the luminance of the pixel circuit PKn as reproduced from the pixel data Dn, in Embodiment 1.
The electrical potential on the switching signal line KAn connected to the gate terminal of the first transistor TR1 is active (LOW) in the select period of the scan signal line Gn (in the period in which the gate pulse GPn is rising) and in the first period T1 and goes inactive (HIGH) at the end of the first period T1 (at the start of second period T2). The electrical potential on the switching signal line KBn connected to the gate terminal of the second transistor TR2 is active (LOW) in the select period of the scan signal line Gn, goes inactive (HIGH) at the start of the first period T1, and goes active (LOW) at the end of the first period T1 (at the start of the second period T2).
The structure in
Supplementary Description of Embodiments
The embodiments and examples described so far are for illustrative purposes only and by no means limit the scope of the disclosure. It is obvious to the person skilled in the art that many modifications and variations are possible based on the description.
Filing Document | Filing Date | Country | Kind |
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PCT/JP2019/040904 | 10/17/2019 | WO |
Publishing Document | Publishing Date | Country | Kind |
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WO2021/075028 | 4/22/2021 | WO | A |
Number | Name | Date | Kind |
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20120293479 | Han | Nov 2012 | A1 |
Number | Date | Country |
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2007-256728 | Oct 2007 | JP |
Number | Date | Country | |
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20230140579 A1 | May 2023 | US |