Patent Application
20240274071
The present application claims priority to Chinese Patent Application No. 202410153875.9, filed on Feb. 2, 2024, the content of which is incorporated herein by reference in its entirety.
The present application relates to the field of display technology, and in particular to a display panel and a display apparatus.
In the field of display technology, display panels conventionally suffer from a problem with color deviation at a high temperature. On one hand, as an ambient temperature rises, a white balance that is well calibrated at a normal temperature may deviate from specification at a higher temperature, and on the other hand, an uneven distribution of temperature in display panels may result in an uneven of distribution of screen chromaticity. Therefore, a solution is urgently needed.
In view of this, embodiments of the present application provide a display panel and a display apparatus, to resolve the problem of color deviation at a high temperature with a display panel.
According to a first aspect, an embodiment of the present application provides a display panel comprising a temperature detection structure, a first connection electrode, and a second connection electrode. The temperature detection structure is connected to the first connection electrode and the second connection electrode, respectively.
According to a second aspect, an embodiment of the present application provides a display apparatus comprising the display panel provided in the first aspect.
In the embodiments of the present application, the temperature detection structure is provided in the display apparatus, so that the temperature detection structure can be used to detect temperatures at positions where light-emitting devices are located, and perform targeted color luminance compensation for the light-emitting devices with different light-emitting colors based on the detected temperatures and the temperature characteristics of the light-emitting devices, which is conducive to making the color luminance of the display panel meet a specification requirement at different operating temperatures, and reducing the problem of color deviation that is prone to occur in the display panel at a high temperature.
To describe the technical solutions in the embodiments of the present application more clearly, the following briefly describe the accompanying drawings required for describing the embodiments. Apparently, the accompanying drawings in the following description are merely some embodiments of the present application, and those of ordinary skill in the art may still derive other accompanying drawings from these accompanying drawings without creative efforts.
For a better understanding of the technical solutions of the present application, the following describes in detail the embodiments of the present application with reference to the accompanying drawings.
It should be noted that, the described embodiments are merely some but not all of the embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those ordinary skilled in the art without creative efforts fall within the protection scope of the present application.
Terms in the embodiments of the present application are merely used to describe the specific embodiments, and are not intended to limit the present application. Unless otherwise specified in the context, words, such as “a”, “the”, and “this”, in a singular form in the embodiments and appended claims of the present application comprise plural forms.
It should be understood that the term “and/or” used in this specification merely describes associations between associated objects, and it indicates three types of relationships. For example, A and/or B may indicate that A exists alone, A and B coexist, or B exists alone. In addition, the character “/” used in this specification generally indicates that the associated objects are in an “or” relationship.
In the field of display technology, a pixel unit of a display panel generally comprises a red light-emitting device, a green light-emitting device, and a blue light-emitting device. Because brightness and chromaticity of the red light-emitting device, the green light-emitting device, and the blue light-emitting device vary with temperature, a white balance well calibrated at a normal temperature deviates at a higher ambient temperature. In addition, various areas of the display panel may have an uneven distribution of temperature due to different display screens, so that the display panel suffers the problem of chromaticity unevenness.
The applicant of the present application provides a solution to the problem existing in the prior art through careful and in-depth research.
An embodiment of the present application provides a display panel 01, which, as shown in
The first connection electrode L1 and the second connection electrode L2 may be used as a positive electrode and a negative electrode of the temperature detection structure WT, respectively, and a current is applied to the temperature detection structure WT through the first connection electrode L1 and the second connection electrode L2, to detect the voltage across the temperature detection structure WT. A material with a resistivity that varies with temperature may be selected for the temperature detection structure WT, from a detected voltage across the temperature detection structure WT, a resistance of the temperature detection structure WT can be derived, and from which a temperature of the temperature detection structure WT can be converted.
Optionally, as shown in
Optionally, as shown in
It should be noted that, of the first connecting electrode L1 and the second connecting electrode L2, it is also possible to provide one of them to be directly lapped-over the temperature detecting structure WT, and the other one and the temperature detecting structure WT on different layers.
Still referring to
Optionally, as shown in
In the embodiment of the present application, the temperature detection structure WT is provided on the display panel 01, so that the temperature detection structure WT can be used to detect temperatures at positions where light-emitting devices FG are located, and perform targeted color luminance compensation for the light-emitting devices FG with different light-emitting colors based on the detected temperatures and the temperature characteristics of the light-emitting devices FG, which is conducive to making the color luminance of the display panel 01 meet a specification requirement at different operating temperatures, and reducing the problem of color deviation that is prone to occur in the display panel 01 at a high temperature.
For example, at a high temperature, considering that luminance of the red light-emitting device is more attenuated, drive currents of the green light-emitting device and the blue light-emitting device may be reduced to a certain extent, so as to reduce luminance of the green light-emitting device and the blue light-emitting device, thereby reducing the color deviation.
In an embodiment of the present application, as shown in
Optionally, the first connection electrode L1 and the second connection electrode L2 are located on a side of the auxiliary temperature detection structures WF away from the temperature detection structure WT.
Optionally, the auxiliary temperature detection structures WF are of a line type such as S type. Certainly, the auxiliary temperature detection structures WF may be alternatively of a block type.
In the embodiment of the present application, the first connection electrode L1 and the second connection electrode L2 are provided to be connected to the temperature detection structure WT through the auxiliary temperature detection structures WF, and thus the first connection electrode L1 and the second connection electrode L2 may be connected to the auxiliary temperature detection structures WF through via holes, and in turn connected to the temperature detection structure WT through via holes between the auxiliary temperature detection structures WF and the temperature detection structure WT, which is conducive to ensuring that the depths of the via holes between the first connection electrode L1 and the second connection electrode L2 and the auxiliary temperature detection structures WF are smaller, and the depths of the via holes between the auxiliary temperature detection structures WF and the temperature detection structure WT are smaller, and improving the reliability of connection between the first connection electrode L1 and the second connection electrode L2 and the temperature detection structure WT. In addition, the auxiliary temperature detection structures WF are connected in series between the first connection electrode L1 and the temperature detection structure WT and between the second connection electrode L2 and the temperature detection structure WT, so that the amount of variation with temperature is increased, thereby improving the detection precision.
In an implementation of the embodiment of the present application, still referring to
In the present implementation, while ensuring reliability of connection between the first connection electrode L1 and the second connection electrode L2 and the temperature detection structure WT, the first auxiliary temperature detection structure WF1 and the second auxiliary temperature detection structure WF2 may be separated from each other, which is conducive to improving the diversity of providing positions of the first auxiliary temperature detection structure WF1 and the second auxiliary temperature detection structure WF2, and reducing the difficulty of providing the first auxiliary temperature detection structure WF1 and the second auxiliary temperature detection structure WF2.
As shown in
The drive circuit layer 12 is located on the substrate 11 and comprises a transistor T, which comprises an active layer YC. The active layer YC comprises a semiconductor material such as silicon (Si). The active layer YC may comprise at least one of an amorphous silicon layer and a low-temperature polysilicon layer. The active layer YC may alternatively comprise a metal oxide such as an indium gallium zinc oxide (IGZO).
The light-emitting device FG is located on the drive circuit layer 12, the transistor T in the drive circuit layer 12 may form a pixel circuit XD, which is configured for driving the light-emitting device FG to emit light.
The drive circuit layer 12 may comprise the temperature detection structure WT, the first connection electrode L1, the second connection electrode L2, and the auxiliary temperature detection structures WF. Wherein the temperature detection structure WT may be located between a film layer where the active layer YC is located and the substrate 11, and the auxiliary temperature detection structures WF and the active layer YC are provided in a same layer, that is, the auxiliary temperature detection structures WF and the active layer YC may be provided in a same layer and made of a same material. For example, both the auxiliary temperature detection structures WF and the active layer YC comprise a semiconductor material. The first connection electrode L1 and the second connection electrode L2 are located on a side of the film layer where the active layer YC is located that is away from the temperature detection structure WT.
Optionally, in a thickness direction H of the display panel 01, the temperature detection structure WT at least partially overlaps the active layer YC.
In the embodiment of the present application, the temperature detection structure WT is provided between the film layer where the active layer YC is located and the substrate 11, so that on one hand, because there are fewer wires between the film layer where the active layer YC is located and the substrate 11, the temperature detection structure WT can be located at more positions, which is conducive to improving a providing range of the temperature detection structure WT, and on the other hand, it is possible for the temperature detection structure WT to shield the light from the substrate 11 side from entering the active layer YC, which is conducive to reducing a leakage current of the transistor T, and thus improving the precision of the pixel circuit XD driving the light-emitting device FG to emit light.
It should be noted that in addition to the active layer YC, the drive circuit layer 12 further comprises a plurality of metal layers, such as a gate layer of the transistor T, a source/drain layer of the transistor T, a capacitor plate layer, a data line layer, and a power line layer. In addition to being located on the active layer YC, the auxiliary temperature detection structures WF may be located on another metal layer of the drive circuit layer 12, provided that the first connection electrode L1 and the second connection electrode L2 are located on a side of a film layer where the auxiliary temperature detection structures WF are located that is away from the temperature detection structure WT.
In an embodiment of the present application, a temperature coefficient of resistance of the first connection electrode L1 is less than a temperature coefficient of resistance of the temperature detection structure WT, and/or a temperature coefficient of resistance of the second connection electrode L2 is less than the temperature coefficient of resistance of the temperature detection structure WT.
It can be understood that the greater the temperature coefficient of resistance, the greater the relative variation in resistance value per unit temperature variation.
In the embodiment of the present application, the temperature coefficient of resistance of the first connection electrode L1 is set to be smaller, a proportion of a resistance value of the first connection electrode L1 in a total resistance value of the temperature detection structure WT, the first connection electrode L1, and the second connection electrode L2 as a whole can be reduced in a high-temperature environment, which is conducive to increasing the proportion of the resistance value of the temperature detection structure WT, and thus improving the precision of the temperature detection structure TW in temperature detection.
In another implementation, the first connection electrode L1 and the second connection electrode L2 may use a same material as the temperature detection structure WT, or the temperature coefficient of resistance of the first connection electrode L1 and the temperature coefficient of resistance of the second connection electrode L2 are greater than the temperature coefficient of resistance of the temperature detection structure WT. Therefore, at different temperatures, the sum of the variations in the resistance values of the first connection electrode L1, the second connection electrode L2, and the temperature detection structure WT together reflects the temperature variation at the position, thereby increasing the amount of the variation in resistance value at the same temperature difference, and improving measurement precision.
Still referring to
The drive circuit layer 12 is located on the substrate 11 and comprises a transistor T, which may be a thin film transistor. A plurality of transistors T may form a pixel circuit XD, which is configured for driving the light-emitting device FG to emit light.
The light-emitting device FG is located on the drive circuit layer 12, that is, the light-emitting device FG is located on a side of the drive circuit layer 12 away from the substrate 11. Some of the transistors T in the drive circuit layer 12 may be electrically connected to the light-emitting device FG to transmit a drive current generated by the pixel circuit XD to the light-emitting device FG.
The drive circuit layer 12 comprises the temperature detection structure WT, the first connection electrode L1, and the second connection electrode L2.
In the embodiment of the present application, the temperature detection structure WT, the first connection electrode L1, and the second connection electrode L2 are integrated into the drive circuit layer 12, and thus it is not necessary to increase the quantity of film layers of the display panel 01 for preparing the temperature detection structure WT, the first connection electrode L1, and the second connection electrode L2, which is conducive to achieving the temperature detection of the display panel 01 without excessively increasing the thickness of the display panel 01, and is conducive to achieving a lighter and thinner display panel 01.
As a possible implementation, as shown in
The temperature detection structure WT, the first connection electrode L1, and the second connection electrode L2 may all be insulated from the pixel circuit XD, that is, the temperature detection structure WT, the first connection electrode L1, and the second connection electrode L2 are not electrically connected to the pixel circuit XD so as not to affect the driving process of the pixel circuit XD.
In addition, as a possible implementation, the temperature detection structure WT may be alternatively located in a film layer where the transistor T is located, or may be located in a film layer on a side of the transistor T away from the substrate 11, that is, the temperature detection structure WT is no longer located between the film layer where the active layer YC is located and the substrate 11. For example, as shown in
Still referring to
Optionally, as shown in
Certainly, the temperature detection structure WT may partially overlap the active layer YC, or fully overlap the active layer YC (frontal projections of the two in the thickness direction of the display panel coincide).
It can be understood that the active layer YC of the transistor T may generate a leakage current when exposed to light, thereby affecting the normal display of the light-emitting device FG, thereby affecting the normal display of the light-emitting device FG.
In the embodiment of the present application, the temperature detection structure WT may be reused as a shielding layer, which can shield the light from the substrate 11 side from entering the active layer YC while implementing temperature detection, which is conducive to reducing a current leakage of the transistor T, and thus ensuring operating precision of the light-emitting device FG. The material of the temperature detection structure WT may comprise molybdenum, which may play a role in shading light while playing a role in temperature detection.
As shown in
Further, a plurality of transistors T may form a pixel circuit XD that drives the light-emitting device FG. As shown in
In the embodiment of the present application, the provision of the temperature detection structure WT may further prevent external light from entering the active layer YC, which is conducive to further reducing a current leakage of each of the transistors T, and thus further ensuring operating precision of the light-emitting device FG.
In an embodiment of the present application, a shape of the temperature detection structure WT comprises at least one of a line type and a block type. That is, a shape of the temperature detection structure WT may be a line type, or may be a block type, or may be partially a line type and partially a block type.
For example, as shown in
For example, as shown in
For example, as shown in
In the embodiment of the present application, when the temperature detection structure WT is of a line type, the resistance value of the temperature detection structure WT may be increased, which is conducive to improving the precision of the temperature detection structure TW in temperature detection. When the temperature detection structure WT is of a block type, it is conducive to improving the shading capability of the temperature detection structure WT. A shape of the temperature detection structure WT is diversified, so that the structural diversity of the display panel 01 can be improved, and it is conducive to improving the flexibility of provision of the temperature detection structure WT, to meet different design requirements of the display panel 01.
In an embodiment of the present application, as shown in
For example, as shown in
In the embodiment of the present application, the temperature detection structure WT is set to a single-layer structure, which is conducive to reducing the complexity of the temperature detection structure WT, and in turn reducing the difficulty of preparing the temperature detection structure WT.
As shown in
It should be noted that
Further, as shown in
Optionally, in a thickness direction H of the display panel 01, the first temperature detection layer WTC1 at least partially overlaps the second temperature detection layer WTC2. In this way, it is conducive to improving a shading function of the temperature detection structure WT, thereby facilitating further reduction of a current leakage of the transistor T.
Optionally, when the shapes of the first temperature detection layer WTC1 and the second temperature detection layer WTC2 both are line type, the first temperature detection layer WTC1 and the second temperature detection layer WTC2 may be provided alternately. In this way, it is conducive to reducing a shading area of the temperature detection structure WT, and thus further reducing a current leakage in the pixel circuit and improving the operating precision of the light-emitting device FG.
Still referring to
In the embodiment of the present application, the temperature detection structure WT comprises at least two temperature detection layers WTC and at least one first insulation layer JC, and two adjacent temperature detection layers WTC are connected in series, so that the resistance value of the temperature detection structure WT can be increased, which is conducive to increasing a proportion of a resistance value of the temperature detection structure WT in a resistance value of the temperature detection structure WT, the first connection electrode L1, and the second connection electrode L2 as a whole, and thus further increasing the precision of the temperature detection structure TW in temperature detection.
In an embodiment of the present application, still referring to
Optionally, the second insulation layer JC2 comprises at least one of a first silicon oxide layer, a silicon nitride layer, and a second silicon oxide layer. When the second insulation layer JC2 comprises the first silicon oxide layer, the silicon nitride layer, and the second silicon oxide layer, the silicon nitride layer may be located between the first silicon oxide layer and the second silicon oxide layer.
In a direction H perpendicular to a plane of the substrate 11, that is, in a thickness direction H of the display panel 01, a distance between the temperature detection structure WT and the film layer where the active layer YC is located is H1, wherein 0.2 μm≤H1≤5 μm.
Optionally, when the second insulation layer JC2 is a single-layer structure, H1 may be 0.2 μm, 0.3 μm, 0.419 μm, 0.473 μm, or the like.
Optionally, when the second insulation layer JC2 is a multi-layer structure, H1 may be 0.454 μm, 0.5 μm, 0.892 μm, 0.927 μm, or the like.
In addition, H1 may be alternatively set to 3 μm, 4 μm, or the like, to meet a requirement for a distance between the temperature detection structure WT and the active layer YC.
In the embodiment of the present application, a distance between the temperature detection structure WT and the film layer where the active layer YC is located is set within a preset range, which, on one hand, may avoid that a distance between the temperature detection structure WT and the light-emitting device FG is too large, which affects the precision in detecting the temperature at a position where the light-emitting device FG is located, and on the other hand, can minimize the parasitic capacitance between the temperature detection structure WT and the transistor T, thereby reducing the influence of the temperature detection structure WT on the operation of the transistor T.
Still referring to
Optionally, the first connection electrode L1 and the second connection electrode L2 are prepared in a same layer. In this way, it is possible to facilitate the simplification of a preparation process. Certainly, the first connection electrode L1 and the second connection electrode L2 may be alternatively provided in different layers to meet different user requirements.
Further, with reference to
Wherein with reference to
It should be noted that, in
As shown in
It should be noted that, regardless of whether the first connection electrode L1 and the second connection electrode L2 are located on opposite sides or a same side of the pixel circuit XD, the temperature detection structure WT may overlap the transistor T in the pixel circuit XD, and even cover the entire pixel circuit XD.
It can be understood that a signal wire is further provided in the display panel 01 to be connected to the first connection electrode L1 and the second connection electrode L2, so as to provide a detection signal to the temperature detection structure WT through the first connection electrode L1 and the second connection electrode L2.
In the embodiment of the present application, it is possible to flexibly set the positions of the first connection electrode L1 and the second connection electrode L2 relative to the pixel circuit XD, which is conducive to achieving the provision of detection signals to the temperature detection structure WT at different positions, and thus flexibly adjusting, according to the layout needs of the display panel 01, the position of a signal wire that provides a detection signal to the temperature detection structure WT, and in turn improving the design flexibility of the display panel 01.
In an embodiment of the present application, as shown in
With reference to
It should be noted that
In
In the embodiment of the present application, the length of the temperature detection structure WT may be larger, which is conducive to increasing the resistance value of the temperature detection structure WT, and thus increasing a proportion of a resistance value of the temperature detection structure WT in a total resistance value of the temperature detection structure WT, the first connection electrode L1, and the second connection electrode L2 as a whole, and in turn improving the precision of the temperature detection structure TW in temperature detection.
It should be noted that, as shown in
With reference to
It can be learned from the foregoing analysis that the temperature detection structure WT overlaps both the first pixel circuit XD1 and the second pixel circuit XD2, so that the temperature detection structure WT can be configured for detecting the temperatures at the positions where the first light-emitting device FG1 and the second light-emitting device FG2 are located. In the embodiment of the present application, the temperatures at the positions where the two light-emitting devices FG with different light-emitting colors are located may be detected at the same time, and in turn the color luminance of the first light-emitting device FG1 and the second light-emitting device FG2 may be adaptively compensated, which is conducive to reducing the quantity of the temperature detection structures WT required in the display panel 01, reducing the wiring complexity in the display panel 01 and the difficulty of preparing the display panel 01.
Further, with reference to
Optionally, the first light-emitting device FG1 is a light-emitting device that emits red light, the second light-emitting device FG2 is a light-emitting device that emits green light, and the third light-emitting device FG3 is a light-emitting device that emits blue light.
The temperature detection structure WT overlaps all the first pixel circuit XD1, the second pixel circuit XD2, and the third pixel circuit XD3. That is, a same temperature detection structure WT may detect the temperatures at the positions where the first light-emitting device FG1, the second light-emitting device FG2, and the third light-emitting device FG3 are located. This is conducive to further reducing the quantity of the temperature detection structures WT required in the display panel 01, and reducing the wiring complexity in the display panel 01.
In addition, the first light-emitting device FG1, the second light-emitting device FG2, and the third light-emitting device FG3 that have different light-emitting colors may form a pixel unit, which is conducive to performing targeted color luminance compensation for the pixel units in different regions of the display panel 01, and achieving the display uniformity of the display panel 01.
In an embodiment of the present application, as shown in
Wherein at least one of the long-segment structures WTA overlaps two pixel circuits XD. The extension direction of the long-segment structure WTA may be the same as the arrangement direction of the two pixel circuits XD overlapping the long-segment structure WTA, and the extension direction of the short-segment structure WTB may intersect the extension direction of the long-segment structure WTA.
Optionally, as shown in
Optionally, as shown in
In the embodiment of the present application, the temperature detection structure WT is S-shaped and overlaps two pixel circuits XD, so that the temperature detection structure WT has a larger length, which is conducive to ensuring a larger resistance value of the temperature detection structure WT, and in turn ensuring the precision of the temperature detected by the temperature detection structure TW during a temperature detection process.
In addition, as shown in
In an embodiment of the present application, as shown in
As shown in
Alternatively, as shown in
Optionally, both the first connection electrode L1 and the second connection electrode L2 comprise a titanium/aluminum/titanium laminated structure.
Further, as shown in
In other words, at least one of the first connection electrode L1 and the second connection electrode L2 may overlap the active layer YC, and at least one of the first connection electrode L1 and the second connection electrode L2 may be reused as a shading structure.
In the embodiment of the present application, at least one of the first connection electrode L1 and the second connection electrode L2 may be reused as a shading structure, which may shield the light from a side of the light-emitting device FG from entering the active layer YC of the transistor T, which is conducive to further reducing a current leakage problem with the transistor T, and thus further improving the precision of driving the light-emitting device FG by the pixel circuit XD to operate.
In an embodiment of the present application, a structure of a drive circuit layer 12 may be as shown in
The contact electrode JD is connected to a light-emitting device FG, the contact electrode JD is connected to the first electrode SD of the transistor T through the transfer connection electrode ZD, and a drive signal transmitted by a pixel circuit XD is transmitted to the light-emitting device FG through the transfer connection electrode ZD and the contact electrode JD. Provision of the transfer connection electrode ZD can improve the reliability of connecting the contact electrode JD to the first electrode SD of the transistor T.
A first connection electrode L1 and a second connection electrode L2 are provided in a same layer as at least one of the gate layer M1, the capacitor plate layer MC, the first electrode SD, the transfer connection electrode ZD, and the contact electrode JD.
Optionally, as shown in
In the present application, if one is provided in a same layer as the other, then the two may be prepared by using a same material and a same process. When the first connection electrode L1 and the second connection electrode L2 are provided in a same layer as one of the capacitor plate layer MC, the first electrode SD, the transfer connection electrode ZD, and the contact electrode JD, the first connection electrode L1 and the second connection electrode L2 may have a higher conductive performance, which is conducive to reducing the loss of transmitting signals by the first connection electrode L1 and the second connection electrode L2 to the temperature detection structure WT.
When the first connection electrode L1 and the second connection electrode L2 are provided in a same layer as the active layer YC, because a distance between the temperature detection structure WT and the active layer YC is shorter, when the first connection electrode L1 and the second connection electrode L2 are connected to the temperature detection structure WT through via holes, areas of the via holes may be set to be smaller, which is conducive to avoiding the influence of the via holes on another film layer.
In an embodiment of the present application, as shown in
The first-type transistor TA comprises a first active layer YC1 and a first gate G1, and the second-type transistor TB comprises a second active layer YC2 and a second gate G2. A first electrode SD of the first-type transistor TA is connected to the first active layer YC1, a first electrode SD of the second-type transistor TB is connected to the second active layer YC2, and the first electrode SD of the first-type transistor TA and the first electrode SD of the second-type transistor TB are provided in a same layer. That is, a source/drain of the first-type transistor TA may be provided in a same layer as a source/drain of the second-type transistor TB.
In the embodiment of the present application, a structure of a drive circuit layer 12 may be as shown in
The contact electrode JD is connected to a light-emitting device FG, the contact electrode JD is connected to the first electrode SD of the first-type transistor TA or the second-type transistor TB through the transfer connection electrode ZD, and a drive signal transmitted by a pixel circuit XD is transmitted to the light-emitting device FG through the transfer connection electrode ZD and the contact electrode JD. Provision of the transfer connection electrode ZD can improve the reliability of connecting the contact electrode JD to the first electrode SD.
Optionally, as shown in
The first connection electrode L1 and the second connection electrode L2 are provided in a same layer as at least one of the first active layer YC1, the second active layer YC2, the first gate G1, the second gate G2, the capacitor plate layer MC, the first electrode SD, the transfer connection electrode ZD, and the contact electrode JD.
It should be noted that
In the embodiment of the present application, the first gate G1, the second gate G2, the capacitor plate layer MC, the first electrode SD, the transfer connection electrode ZD, and the contact electrode JD generally comprise a metal material. When the first connection electrode L1 and the second connection electrode L2 are provided in a same layer as at least one of them, the first connection electrode L1 and the second connection electrode L2 may have a high conductive performance, which is conducive to reducing the loss of transmitting signals by the first connection electrode L1 and the second connection electrode L2 to the temperature detection structure WT.
When the first connection electrode L1 and the second connection electrode L2 are provided in a same layer as the first active layer YC1, a distance between the first connection electrode L1 and the second connection electrode L2 and the temperature detection structure WT may be shorter. Therefore, when the first connection electrode L1 and the second connection electrode L2 are connected to the temperature detection structure WT through via holes, areas of the via holes may be set to be smaller, which is conducive to avoiding the influence of the via holes on another film layer. Certainly, to improve structural diversity of the display panel 01, the first connection electrode L1 and the second connection electrode L2 may be alternatively provided in a same layer as the second active layer YC2.
In an embodiment of the present application, as shown in
In other words, the temperature detection structure WT may receive an electrical signal through the first connection electrode L1 and the first connecting wire LX1, and may receive an electrical signal through the second connection electrode L2 and the second connecting wire LX2.
Optionally, the first connecting wire LX1 is provided in a same layer as the first connection electrode L1, and the second connecting wire LX2 is provided in a same layer as the second connection electrode L2. Certainly, the first connecting wire LX1 and the first connection electrode L1 may be alternatively provided in different layers, and the two are connected through a via hole. Similarly, the second connecting wire LX2 and the second connection electrode L2 may be alternatively provided in different layers, and the two are connected through a via hole.
Optionally, the connecting wires LX are provided in a same layer as a data line or a power line in the display panel 01. That is, the connecting wires LX and the data line or the power line may be prepared by using a same material and a same process.
The data line or the power line in the display panel 01 is usually prepared by using a metal with good conductivity, and a thickness of the data line and a thickness of the power line are also larger. Provision of the connecting wires LX in a same layer as the data line or the power line is conducive to ensuring a better conductive performance and a small resistance value of the connecting wires LX, which is conducive to reducing the loss of an electrical signal received by the temperature detection structure WT, and reducing a proportion of a resistance value of the connecting wires LX in a resistance value of the temperature detection structure WT, the first connection electrode L1, the second connection electrode L2, and the connecting wires LX as a whole, thereby being conductive to ensuring the precision of the temperature detection structure TW in temperature detection.
In an embodiment of the present application, a temperature coefficient of resistance of the connecting wires LX is less than a temperature coefficient of resistance of the temperature detection structure WT.
It can be understood that the greater the temperature coefficient of resistance, the greater the relative variation in resistance value per unit temperature variation.
In the embodiment of the present application, if the temperature coefficient of resistance of the connecting wires LX is set to be smaller, a proportion of a variation in a resistance value of the connecting wires LX in a variation in a resistance value of the temperature detection structure WT, the first connection electrode L1, the second connection electrode L2, and the connecting wires LX as a whole can be reduced in a high-temperature environment, which is conducive to increasing a proportion of a variation in a resistance value of the temperature detection structure WT, and thus improving the precision of the temperature detection structure TW in temperature detection.
As shown in
The second signal line SL2 may be a data line or a power line in the display panel 01, and the second signal line SL2 may extend in a column direction of the display panel 01. That is, as a possible implementation, the connecting wires LX as well as the data line and the power line in the display panel 01 may be provided in different layers.
Certainly, the second signal line SL2 may be alternatively a scan line or a light-emitting control signal line in the display panel 01, and the second signal line SL2 may extend in a row direction of the display panel 01. The second signal line SL2 may be the same type of signal line as the first signal line SL1 in the foregoing embodiment.
Wherein in a thickness direction H of the display panel 01, the connecting wires LX overlap the second signal line SL2.
In the embodiment of the present application, provision of the connecting wires LX overlapping the second signal line SL2 is conducive to reducing an occupation area of the connecting wires LX and the second signal line SL2 as a whole in the display panel 01, and increasing design space of a wire in the display panel 01. In addition, when the display panel 01 is a transparent display panel, the connecting wires LX overlapping the second signal line SL2 is also conducive to improving the transparency of the display panel 01 and thus improving a transparent effect of the transparent display panel.
Optionally, as shown in
Further, as shown in
In this way, it is conducive to ensuring that a resistance value of a connecting wire LX is smaller, which is conducive to further ensuring that a proportion of a resistance value of the connecting wires LX in a resistance value of the temperature detection structure WT, the first connection electrode L1, the second connection electrode L2, and the connecting wires LX as a whole is smaller, and further ensuring the precision of the temperature detection structure TW in temperature detection.
Still referring to
It can be learned from the foregoing analysis that the first connection electrode L1 and the second connection electrode L2 may be connected to the temperature detection structure WT through via holes, the first connecting wire LX1 may be connected to the first connection electrode L1 through a via hole, and the second connecting wire LX2 may be connected to the second connection electrode L2 through a via hole. In the present application, providing a larger width of the first connection electrode L1 and a larger width of the second connection electrode L2 can reduce the influence of a puncturing error on the connection between the first connection electrode L1 and the first connecting wire LX1 and the temperature detection structure WT, and the influence of a puncturing error on the connection between the second connection electrode L2 and the second connecting wire LX2 and the temperature detection structure WT, which is conducive to improving the reliability of connection between the first connection electrode L1 and the first connecting wire LX1 and the temperature detection structure WT and the reliability of connection between the second connection electrode L2 and the second connecting wire LX2 and the temperature detection structure WT.
The first connecting wire LX1 and the second connecting wire LX2 may be located between two adjacent columns of pixel circuits or between two adjacent rows of pixel circuits, or the first connecting wire LX1 and the second connecting wire LX2 may be located between different pixel circuit columns or between different pixel circuit rows.
In an embodiment of the present application, still referring to
In addition, the display panel 01 further comprises a drive circuit layer 12, which is provided on the substrate 11 and comprises a transistor T, and the light-emitting device FG is provided on the drive circuit layer 12. The temperature detection structure WT may be provided in the drive circuit layer 12, that is, the temperature detection structure WT may be located on a side of the light-emitting device FG facing towards the substrate 11, and the light-emitting device FG may emit light to a side away from the substrate 11.
In the embodiment of the present application, the temperature detection structure WT overlaps the light-emitting device FG. On one hand, a distance between the temperature detection structure WT and the light-emitting device FG is shorter, which is conducive to ensuring that a temperature detected by the temperature detection structure WT is approximately the same as the temperature at the position where the light-emitting device FG is located, and thus performing targeted color luminance compensation for light-emitting devices FG with different light-emitting colors, and reducing a color deviation of the display panel 01; and on the other hand, when the display panel 01 is a transparent display panel, the temperature detection structure WT can reduce the influence on the transparency of the display panel while realizing the temperature detection of the light-emitting device FG, which is conducive to ensuring the transparency of the transparent display panel.
In an implementation of this embodiment of the present application, as shown in
Optionally, light-emitting colors of the at least two light-emitting devices FG overlapping the temperature detection structure WT are the same. For example, when a same pixel circuit XD drives a plurality of light-emitting devices FG with a same light-emitting color, the temperature detection structure WT may overlap all the plurality of light-emitting devices FG. In this way, it is advantageous to detect an average of the temperatures at the positions where the plurality of light-emitting devices FG are located, and when color luminance compensation is performed for these light-emitting devices FG, it is advantageous to avoid overcompensation or undercompensation with a larger error for one of the light-emitting devices FG.
Optionally, a light-emitting color of at least one of the at least two light-emitting devices FG overlapping the temperature detection structure WT is different from that of the other. In this way, the temperature detection structure WT may detect temperatures at the positions where the two light-emitting devices FG with different light-emitting colors are located at the same time, and in turn adaptive compensation is performed for the color luminance of these light-emitting devices FG, which is conducive to reducing the quantity of the temperature detection structures WT required in the display panel 01, reducing the wiring complexity in the display panel 01, and reducing the difficulty of preparing the display panel 01.
Further, as shown in
The temperature detection structure WT overlaps all the first light-emitting device FG1, the second light-emitting device FG2, and the third light-emitting device FG3. That is, the same temperature detection structure WT may detect the temperatures at the positions where the first light-emitting device FG1, the second light-emitting device FG2, and the third light-emitting device FG3 are located. It is conducive to further reducing the quantity of the temperature detection structures WT required in the display panel 01, and reducing the wiring complexity in the display panel 01.
In addition, the first light-emitting device FG1, the second light-emitting device FG2, and the third light-emitting device FG3 that have different light-emitting colors may form a pixel unit, which is conducive to performing targeted color luminance compensation for pixel units in different regions of the display panel 01, thereby achieving display uniformity of the display panel 01.
In an embodiment of the present application, the temperature detection structure WT is located between the transistor T and the light-emitting device FG, and does not overlap the transfer connection electrode ZD in a thickness direction H of the display panel 01.
Optionally, as shown in
In the embodiment of the present application, the temperature detection structure WT does not affect provision of the transfer connection electrode ZD, which is conducive to improving the reliability of connecting the contact electrode JD to the transistor T through the transfer connection electrode ZD. In addition, the temperature detection structure WT may further function as a physical barrier, which is conducive to reducing the influence of the light-emitting device FG on the transistor T in a binding process and improving the stability of the transistor T.
Further, in a thickness direction H of the display panel 01, the temperature detection structure WT overlaps the active layer YC of the transistor T, and the temperature detection structure WT may comprise metal molybdenum. In this way, the temperature detection structure WT may further play a role of shielding while realizing temperature detection, which is conducive to avoiding the occurrence of leakage current of the transistor T due to light form a side of the light-emitting device FG entering the active layer YC of the transistor T.
It should be noted that, in
In an embodiment of the present application, as shown in
A temperature detection structure WT is located on a side of the light-emitting device FG away from the drive circuit layer 12. In this case, the light-emitting device FG may emit light toward the substrate 11 side. The temperature detection structure WT may comprise a metal material.
In the embodiment of the present application, the temperature detection structure WT may further reflect light emitted from the light-emitting device FG to a side away from the drive circuit layer 12 to the substrate 11 side while detecting the temperature at the position where the light-emitting device FG is located, which is conducive to ensuring an effect of emitting light from the light-emitting device FG to the side of the substrate 11.
In an embodiment of the present application, as shown in
Wherein a temperature detection structure WT is located in the pixel circuit region A1.
In the embodiment of the present application, provision of the temperature detection structure WT in the pixel circuit region A1 can avoid the influence of the temperature detection structure WT on the transparent region A2 of the display panel while the temperature at the position where the light-emitting device FG is located is detected, which is conducive to ensuring the transparency of the transparent display panel.
In an embodiment of the present application, the temperature detection structure WT comprises a metal layer and a semiconductor layer. The metal layer may be located between the active layer YC of the transistor T and the substrate 11, the semiconductor layer may be on a same layer as the active layer YC of the transistor T, and the metal layer may be connected to the semiconductor layer through a via hole. Optionally, the metal layer comprises molybdenum, and the semiconductor layer comprises silicon.
As shown in
Wherein a resistivity of the first resistor R1, a resistivity of the second resistor R2, and a resistivity of the third resistor R3 increase with an increasing temperature, and a resistivity of the fourth resistor R4 decreases with an increasing temperature.
In the embodiment of the present application, the first resistor R1, the second resistor R2, the third resistor R3, and the fourth resistor R4 may form a Wheatstone bridge. That is, the temperature detection structure WT may comprise a Wheatstone bridge. Because resistance change trends of the first resistor R1, the second resistor R2 and the third resistor R3 are opposite to a resistance change trend of the fourth resistor R4 with a change in temperature, a difference between a resistance value of the fourth resistor R4 and a resistance value of the first resistor R1, the second resistor R2, or the third resistor R3 becomes larger with a change in temperature, and a change in temperature is more easily measured by detecting the resistance values of the first resistor R1, the second resistor R2, the third resistor R3, and the fourth resistor R4, which is conducive to improving the precision of detecting temperature by the Wheatstone bridge, and in turn improving the precision of color luminance compensation for the light-emitting device FG at different temperatures.
In an embodiment of the present application, the temperature detection structure WT is made of at least one of molybdenum, aluminum, titanium, and a semiconductor material.
Optionally, the temperature detection structure WT is a single-layer structure comprising metal molybdenum. A resistance and a temperature coefficient of a resistance of molybdenum are both larger, which is conducive to ensuring that a proportion of a resistance value of the temperature detection structure WT in a resistance value of the temperature detection structure WT, the first connection electrode L1, the second connection electrode L2, and the connecting wires LX as a whole is larger, and improving the precision of the temperature detection structure TW in temperature detection.
Optionally, the temperature detection structure WT may be alternatively a laminated metal structure comprising titanium/aluminum/titanium or titanium/molybdenum/titanium. Optionally, the temperature detection structure WT is a multi-layer structure that comprises one layer of molybdenum metal and one layer of semiconductor material.
In this case, the first connection electrode L1, the second connection electrode L2, and the connecting wires LX may comprise at least one of a manganin material and a constantan material. Because a temperature coefficient of resistance of the manganin material or the constantan material is relatively small, resistance values of the first connection electrode L1, the second connection electrode L2, and the connecting wires LX are less affected by a temperature variation, which is conducive to improving the precision of the temperature detection structure TW in temperature detection when the temperature changes.
In an embodiment of the present application, as shown in
Optionally, as shown in
In a same partition AF, an operating temperature of any one of the light-emitting devices FG may be detected by the temperature detection structure WT, so as to improve the precision of color luminance compensation for the light-emitting device FG. Operating temperatures of only a part of the light-emitting devices FG in the partition may be detected, so as to reduce the structural complexity of the display panel 01 and simplify the design difficulty.
In the embodiment of the present application, operating temperatures of light-emitting devices FG in different partitions AF may be detected by the temperature detection structure WT, which is conducive to performing targeted compensation for color luminance of the light-emitting devices FG in different partitions AF, and thus making color luminance of the different partitions AF in the display panel 01 converge, and in turn improving the display uniformity of the display panel 01.
As shown in
Wherein a density of the temperature detection structure WT in the first partition AF1 is greater than a density of the temperature detection structure WT in the second partition AF2. That is, the quantity of temperature detection structures WT per unit area in the first partition AF1 is greater than the quantity of temperature detection structures WT per unit area in the second partition AF2.
The inventor of the present application has found that the temperature of the driver chip is higher during operation, and the temperature in the first partition AF1 is generally greater than the temperature in the second partition AF2 due to the heat transfer of the temperature at the driver chip. The higher the temperature, the larger the color luminance difference between light-emitting devices FG with different light-emitting colors, and the greater the influence on the uniformity of a display picture.
In the embodiment of the present application, high-density monitoring may be performed on the first partition AF1 with a higher operating temperature, which is conducive to improving the precision of detecting an operating temperature of a light-emitting device FG in the first partition AF1, and thus achieving more accurate color luminance compensation for the first partition AF1 with larger influence on display uniformity, and in turn further improving the display color luminance uniformity of the display panel 01.
It should be noted that when the binding region BQ is located at a back side of the display panel 01, that is, when the driver chip is provided at the back side of the display panel 01, the first partition AF1 may be alternatively a region overlapping the driver chip.
In addition, it is possible to arrange for the density of the temperature detection structures WT to gradually decrease in a direction in which the first partition AF1 points to the second partition AF2.
In an embodiment of the present application, as shown in
Wherein a density of the temperature detection structure WT in the intermediate region AFA is greater than a density of the temperature detection structure WT in the edge region AFB. That is, the quantity of temperature detection structures WT per unit area in the intermediate region AFA is greater than the quantity of temperature detection structures WT per unit area in the edge region AFB.
The inventor of the present application has found that in the display panel 01, a temperature of the intermediate region AFA is generally greater than a temperature of the edge region AFB. The higher the temperature, the larger a color luminance difference between light-emitting devices FG with different light-emitting colors, and the greater the influence on the uniformity of a display picture.
In the embodiment of the present application, high-density monitoring may be performed on the intermediate region AFA with a higher operating temperature, which is conducive to improving the precision of detecting an operating temperature of a light-emitting device FG in the intermediate region AFA, and thus achieving more accurate color luminance compensation for the intermediate region AFA with larger influence on display uniformity, and in turn further improving the display color luminance uniformity of the display panel 01.
In addition, it is possible to arrange for the density of the temperature detection structures WT to gradually decrease in a direction in which the intermediate region AFA points to the edge of the display panel.
In an embodiment of the present application, as shown in
A plurality of temperature detection structures WT comprise a first temperature detection structure WT1, a second temperature detection structure WT2, and a third temperature detection structure WT3. The first temperature detection structure WT1, the second temperature detection structure WT2, and the third temperature detection structure WT3 may be electrically insulated from each other. In a thickness direction H of the display panel 01, at least a part of the first light-emitting device FG1 overlaps the first temperature detection structure WT1, at least a part of the second light-emitting device FG2 overlaps the second temperature detection structure WT2, and at least a part of the third light-emitting device FG3 overlaps the third temperature detection structure WT3.
In other words, the first temperature detection structure WT1 may be configured for detecting an operating temperature of the first light-emitting device FG1, the second temperature detection structure WT2 may be configured for detecting an operating temperature of the second light-emitting device FG2, and the third temperature detection structure WT3 may be configured for detecting an operating temperature of the third light-emitting device FG3.
In the embodiment of the present application, the operating temperatures of the first light-emitting device FG1, the second light-emitting device FG2, and the third light-emitting device FG3 that have different light-emitting colors may be detected by the temperature detection structures WT, which is conducive to performing targeted color luminance compensation for the first light-emitting device FG1, the second light-emitting device FG2, and the third light-emitting device FG3 according to temperature characteristics of color luminance of the first light-emitting device FG1, the second light-emitting device FG2, and the third light-emitting device FG3, and thus further reducing a color deviation problem with the display panel 01 in different application scenarios.
Further, with reference to
In an embodiment of the present application, a connecting wire LX transmit a constant current signal or an alternating current signal to the temperature detection structure WT. That is, the detection electrical signal applied to the temperature detection structure WT may be a constant current signals or an alternating current signal.
With reference to the foregoing embodiments, it can be learned that the temperature detection structure WT may receive constant current signals or alternating current signals through the first connection electrode L1, the second connection electrode L2, and the connecting wires LX. Further, a connecting wires LX may receive a constant current signal or an alternating current signal from the driver chip, that is, the driver chip may provide a constant current signal or an alternating current signal to the temperature detection structure WT, and the driver chip may calculate a resistance value of the temperature detection structure WT and a temperature at a position where the temperature detection structure WT is located.
The principle that the temperature detection structure WT can detect the temperature is briefly described below by taking the temperature detection structure WT comprising molybdenum metal as an example.
A resistivity of molybdenum may vary with temperature, and the resistivity of the molybdenum is temperature dependent. A resistance of the temperature detection structure WT may be obtained by applying a current to the temperature detection structure WT and detecting the voltage between the first connection electrode L1 and the second connection electrode L2. Then, a resistivity of the temperature detection structure WT is calculated based on information such as a length and a cross-section of the temperature detection structure WT, and in turn further a temperature at a position where the temperature detection structure WT is located is obtained by conversion.
In the embodiment of the present application, detection of the temperature at the position where the temperature detection structure WT is located may be achieved by transmitting a constant current signal or an alternating current signal to the temperature detection structure WT. In addition, transmitting the current to the temperature detection structure WT also enables the temperature detection structure WT to act as a heater, which is conducive to flexibly changing an operating temperature of the light-emitting device FG, and thus adjusting the color luminance of the light-emitting device FG, and in turn improving the display effect of the display panel 01.
In addition, when an alternating current is transmitted to the temperature detection structure WT, a temperature range that can be detected by the temperature detection structure WT may be adjusted by changing a frequency of the alternating current, so as to ensure that a detection range can be flexibly set as required while the temperature at the position where the light-emitting device FG is located is detected. It may further be detected, according to a material characteristic of the temperature detection structure WT, whether a correspondence between a frequency of the applied alternating current and a voltage, a resistance, and a detection temperature range of the temperature detection structure WT is abnormal, so as to judge whether a film layer structure of the display panel 01 fails, for example, whether a film layer stratification problem occurs.
The present application provides a display apparatus 02. As shown in
The temperature detection structure WT is provided in the display apparatus 02, and thus it is possible to use the temperature detection structure WT to detect the temperatures at the positions where the light-emitting devices FG are located, and to perform targeted color luminance compensation for the light-emitting devices FG with different light-emitting colors based on the detected temperatures and the temperature characteristics of the light-emitting devices FG, which is conducive to ensuring that the color luminance of the display panel 01 meets a specification requirement at different operating temperatures, and reducing the problem of color deviation that is prone to occur in the display panel 01 at a high temperature.
The above descriptions are merely preferred embodiments of the present application and are not intended to limit the present application. Any modification, equivalent replacement and improvement within the spirit and principle of the present application shall be comprised within the protection scope of the present application.
| Number | Date | Country | Kind |
|---|---|---|---|
| 202410153875.9 | Feb 2024 | CN | national |
