This application claims priority to Chinese Patent Application No. 202110536427.3 filed May 17, 2021, titled “DISPLAY PANEL AND DISPLAY DEVICE”, the disclosure of which is incorporated herein by reference in its entirety.
Embodiments of the present disclosure relate to the field of display technologies, and in particular, to a display panel and a display device.
An organic light-emitting diode (OLED) becomes one of research hotspots in a current display field due to the advantages of low power consumption, low cost, self-luminous, a wide viewing angle and a fast response speed. An electronic display product may adopt different refresh rates for displaying in different application scenes, for example, a driving manner with a relatively high refresh rate is adopted for driving and displaying a dynamic picture, so that the smoothness of the displayed picture is ensured; or a driving manner with a relatively low refresh rate is adopted for driving and displaying a static picture, so that the power consumption is reduced.
When an electronic product adopting the organic self-luminous technology is used for displaying at a low refresh rate, a potential of a gate of a drive transistor in an existing pixel circuit is changed due to the leakage current problem of other switches, so that the brightness of the light-emitting element will continuously decrease and then increase when the light-emitting element is driven to emit light; therefore, the display brightness of the display panel is unstable, and the display effect and the user experience are affected.
The present disclosure provides a display panel and a display device, to stabilize a potential of a gate of a drive transistor in a pixel circuit, maintain the stability of the brightness of a light-emitting element, and improve the display effect of the display panel.
In one embodiment of the present disclosure provides a display panel. The display panel includes a pixel circuit and a light-emitting element, where the pixel circuit includes a drive module, a reset module and a compensation module, where the drive module is configured to provide a drive current for the light-emitting element, where the drive module includes a drive transistor, and a gate of the drive transistor is connected to a first node; the reset module is configured to provide a reset signal for the gate of the drive transistor, where the reset module includes a first double-gate transistor, the first double-gate transistor includes a first sub-transistor and a second sub-transistor, and a connection node between the first sub-transistor and the second sub-transistor is a second node; and the compensation module is configured to compensate a threshold voltage of the drive transistor, where the compensation module includes a second double-gate transistor, the second double-gate transistor includes a third sub-transistor and a fourth sub-transistor, and a connection node between the third sub-transistor and the fourth sub-transistor is a third node; where a working process of the pixel circuit includes a first stage, and in the first stage, the first double-gate transistor and the second double-gate transistor are both turned off, and where a voltage of the first node is V1, a voltage of the second node is V2, and a voltage of the third node is V3, where (V2−V1)×(V1−V3)>0.
In another embodiment of the present disclosure further provides a display device, including the display panel described in any one of the embodiments.
In the present embodiment, the voltage of the first node, the voltage of the second node, and the voltage of the third node are set to satisfy: (V2−V1)×(V1−V3)>0, so that the voltage of the first node can be ensured to be between the voltage of the second node and the voltage of the third node. In this way, even in a case where a voltage difference exists between the first node and the second node and a voltage difference exists between the first node and the third node, the two voltage differences are different in positive or negative, directions of leakage currents of sub-transistors between the nodes due to the voltage differences are different. For the first node, the leakage current will flow from the second node to the first node and to the third node, or flows from the third node to the first node and to the second node, compared with that a leakage current flows from both the second node and the third node to the first node in the related art, the voltage of the first node is ensured to be relatively stable in the embodiments of the present disclosure. According to the embodiments of the present disclosure, a problem that a potential of the first node is changed due to the leakage current of the transistor caused by the scan signal and the capacitor in the related art is solved, the effect of the leakage current on the first node may be reduced by changing the voltage differences between the nodes, the voltage of the first node is ensured to be relatively stable, the stability of the brightness of the light-emitting element is maintained, and thus the display effect of the display panel especially under a low-frequency driving is improved.
The present disclosure will be further described in detail in conjunction with the drawings and embodiments below. It should be understood that the embodiments described herein are merely used for explaining the present disclosure and are not intended to limit the present disclosure. In addition, it should also be noted that, for ease of description, only some, but not all, of the structures related to the present disclosure are shown in the drawings.
It should be noted that the double-gate transistor of the pixel circuit includes two sub-transistors, and a capacitor is simultaneously connected in parallel between a node connected between the two sub-transistors and a gate of the node. It should be understood that when the two sub-transistors are controlled to be turned on or off through a scan signal, one polar plate of the capacitor may also receive the scan signal. According to the charging and discharging principle of the polar plate of the capacitor, charge quantities on two polar plates of the capacitor may affect each other, that is, when one polar plate receives the scan signal, a potential of the other polar plate may be affected, and thus a potential of a connection node between the two sub-transistors is affected. Taken the first double-gate transistor (T1) shown in the drawings being a P-type double-gate transistor as an example, a connection node between a first sub-transistor (T11) and a second sub-transistor (T12) in the first double-gate transistor (T1) is a second node (N2). In the light-emitting stage, a gate of the first double-gate transistor (T1) is configured to be turned off after receiving a first scan signal (S1) (high level signal). In this way, a potential of the second node (N2) is raised by a second capacitor (C2) due to this high level signal, so that the potential of the second node (N2) is higher than the potential of the first node (N1), a leakage current of the second sub-transistor (T12) occurs in this stage, and the potential of the first node (N1) is raised. In a similar way, the second double-gate transistor (T2), also being a P-type transistor, also has the same effect on the first node (N1) in the light-emitting stage. A potential of the third node (N3) is raised due to the third capacitor (C3) and a second scan signal (S2) (high level signal), so that the potential of the third node (N3) is also higher than the potential of the first node (N1), and the third sub-transistor (T23) in the second double-gate transistor (T2) also generates a leakage current, so that the potential of the first node (N1) is raised. Finally, the potential of the first node (N1) may cause a leakage current of the sub-transistor due to the potentials of the second node (N2) and the third node (N3), and thus the potential of the first node (N1) is affected. Experiments have found that in this stage, when the drive transistor (T3) drives the light-emitting element (20) to be lighted on, the light-emitting element (20) subjects to a continuous decrease and then a gradually increase in the brightness due to the change of the first node (N1), which causes the light-emitting brightness of the light-emitting element (20) unstable.
Based on the above-described problem, an embodiment of the present disclosure provides a display panel. The display panel includes a pixel circuit and a light-emitting element, where the pixel circuit includes a drive module, a reset module and a compensation module, where the drive module is configured to provide a drive current for the light-emitting element, the drive module includes a drive transistor, and a gate of the drive transistor is connected to a first node; the reset module is configured to provide a reset signal for the gate of the drive transistor, the reset module includes a first double-gate transistor, the first double-gate transistor includes a first sub-transistor and a second sub-transistor, and a connection node between the first sub-transistor and the second sub-transistor is a second node; and the compensation module is configured to compensate a threshold voltage of the drive transistor, the compensation module includes a second double-gate transistor, the second double-gate transistor includes a third sub-transistor and a fourth sub-transistor, and a connection node between the third sub-transistor and the fourth sub-transistor is a third node; where a working process of the pixel circuit includes a first stage, and in the first stage, the first double-gate transistor and the second double-gate transistor are both turned off, and where a voltage of the first node is V1, a voltage of the second node is V2, and a voltage of the third node is V3, where (V2−V1)×(V1−V3)>0.
In the present embodiment, the voltage of the first node, the voltage of the second node, and the voltage of the third node are set to satisfy: (V2−V1)×(V1−V3)>0, so that V3<V1 is ensured while ensuring V2>V1, or V2<V1 is ensured while ensuring V3>V1. In other words, in the present embodiment, the voltage of the first node being between the voltage of the second node and the voltage of the third node may be ensured. In this way, even in a case where a voltage difference exists between the first node and the second node and a voltage difference exists between the first node and the third node, the two voltage differences are different in positive and negative, and directions of leakage currents of sub-transistors between the nodes due to the voltage differences are different. For the first node, the leakage current will flow from the second node to the first node and to the third node, or flows from the third node to the first node and to the second node. It should be understood that compared with that a leakage current flows from both the second node and the third node to the first node in the related art, the voltage of the first node is ensured to be relatively stable in the embodiments of the present disclosure. Therefore, on a basis that the pixel circuit provided in the embodiments of the present disclosure satisfies: (V2−V1)×(V1−V3)>0, even in a case where the voltage of the second node and the voltage of the third node are changed due to the scan signal and the capacitance, the voltage of the first node would not be greatly affected, and thus the relative stability of the voltage of the first node can be ensured.
The embodiments of the present disclosure will be described clearly and completely in conjunction with the accompanying drawings in the embodiments of the present disclosure below.
Further, in this pixel circuit, the reset module (12) is connected between a terminal of reset signal (Vref) and the gate of the drive transistor (T3), one end of the first double-gate transistor (T1) is connected to the terminal of reset signal (Vref), and another end is connected to the gate of the drive transistor (T3); the compensation module (13) is connected between the gate of the drive transistor (T3) and a drain of the drive transistor (T3), one end of the second double-gate transistor (T2) is connected to the gate of the drive transistor (T3), and another end is connected to the drain of the drive transistor (T3).
Furthermore, in the present embodiment, the pixel circuit (10) is connected to a terminal of first power supply voltage signal (PVDD), and is configured to receive a first power supply voltage signal, and the first power supply voltage signal is a constant high level signal. A gate of the first double-gate transistor (T1) is connected to a line of first scan signal (Si), and is configured to receive a first scan signal. The pixel circuit (10) includes a second capacitor (C2), a first pole plate of the second capacitor (C2) is connected to the line of first scan signal (Si), and a second pole plate of the second capacitor (C2) is connected to the second node (N2). A gate of the second double-gate transistor (T2) is connected to a line of second scan signal (S2), and is configured to receive a second scan signal. The pixel circuit (10) includes a third capacitor (C3), a first pole plate of the third capacitor (C3) is connected to the line of second scan signal (S2), and a second pole plate of the third capacitor (C3) is connected to the third node (N3).
In some embodiments, the driving process of the pixel circuit includes an initialization (reset) stage (ta), a data written stage (tb), and a light-emitting stage (tc). In the initialization (reset) stage ta, the first scan signal (S1) jumps from the high level to the low level, in this way, the first double-gate transistor (T1) is turned on, and the reset signal (Vref) is written into the first node (N1); and meanwhile, a fourth scan signal S4 jumps from the high level to the low level, at which time the seventh transistor (T7) is turned on, and the initialization signal (Vini) is written to an anode of the light-emitting element (20). This initialization (reset) stage is used for resetting or initializing the first node (N1) and for resetting or initializing the anode of the light-emitting element (20), to avoid that a voltage signal written in a previous frame would affect the first node (N1) and the anode of the light-emitting element (20).
In the data written (threshold grabbing) stage (tb), a third scan signal (S3) jumps from the high level to the low level and the fourth transistor (T4) is turned on, meanwhile, the second scan signal (S2) jumps from the high level to the low level and the second double-gate transistor (T2) is turned on. A data signal (Vdata) flows from the fourth transistor (T4), the drive transistor (T3) and the second double-gate transistor (T2) sequentially into the first node (N1), and since a voltage of the fourth node N4 is Vdata, when the voltage of the first node (N1) reaches Vdata−Vth, where Vth is the threshold voltage of the drive transistor (T3), the drive transistor (T3) is turned off. That is, in this stage, a threshold-compensated data voltage signal (Vdata−Vth) is written into the first node (N1).
In the light-emitting stage (tc), the light-emitting control signal (EM) jumps from the high level to the low level, in this way, the fifth transistor (T5) and the sixth transistor (T6) are turned on, a path is formed between the terminal of first power supply voltage signal (PVDD) and a second power supply voltage signal terminal (PVEE), the light-emitting element (20) emits light, and a magnitude of a light-emitting current is controlled by a potential of the gate of the drive transistor (T3). Since the voltage stored by the first node (N1) in a previous stage is the Vdata−Vth, the voltage of the third node (N3) is slightly higher than a voltage of the second power supply voltage signal terminal (PVEE), and a current (I) passing through the drive transistor (T3) is expressed as: I=K (N2−N1−Vth)=K (PVDD−Vdata). It should be understood that a voltage stored in the first node (N1) is the higher, the light-emitting current is the larger, and the light-emitting brightness of the light-emitting element (20) is the brighter, that is, the voltage of the first node (N1) may affect the light-emitting brightness of the light-emitting element (20).
Based on the driving process of the above pixel circuit, it should be noted that in the embodiments of the present disclosure, in the first stage, the voltage of the first node (N1), the voltage of the second node (N2) and the voltage of the third node (N3) are set to satisfy: (V2−V1)×(V1−V3)>0, and the first stage is a time period when the first double-gate transistor (T1) and the second double-gate transistor (T2) are turned off. It can be seen from the driving process of the pixel circuit described above that the first double-gate transistor (T1) and the second double-gate transistor (T2) at least need to be turned off in the light-emitting stage. According to the present embodiment, the voltage of the first node (N1), the voltage of the second node (N2), and the voltage of the third node (N3) are set to satisfy: (V2−V1)×(V1−V3)>0, so that when the first double-gate transistor (T1) and the second double-gate transistor (T2) are turned off, a turn-off signal is prevented from affecting the second node (N2) and the third node (N3), and further affecting the voltage of the first node (N1).
When V2>V1 and V3<V1, in this way, since V2>V1, a voltage difference exists on two ends of the second sub-transistor (T12) between the second node (N2) and the first node (N1), and in a case where a leakage current occurs in the second sub-transistor (T12), a flowing direction of the leakage current flows from the second node (N2) to the first node (N1). Meanwhile, since V3<V1, a voltage difference exists on two ends of the third sub-transistor (T23) between the third node (N3) and the first node (N1), and in a case where a leakage current occurs in the third sub-transistor (T23), a flowing direction of the leakage current flows from the first node (N1) to the third node (N3). In this way, for the first node (N1), the voltage of the first node (N1) is less affected by the leakage currents of the transistors, and thus the voltage of the first node (N1) may remain substantially stable. When V2<V1 and V3>V1, since V2<V1, a voltage difference exists on two ends of the second sub-transistor (T12) between the second node (N2) and the first node (N1), and in a case where a leakage current occurs in the second sub-transistor (T12), the flowing direction of the leakage current flows from the first node (N1) to the second node (N2). Meanwhile, since V3>V1, a voltage difference exists on two ends of the third sub-transistor (T23) between the third node (N3) and the first node (N1), and in a case where a leakage current occurs in the third sub-transistor (T23), the flowing direction of the leakage current flows from the third node (N3) to the first node (N1). In this way, for the first node (N1), the voltage of the first node (N1) is less affected by the leakage current of the transistor, and thus the voltage of the first node (N1) may remain substantially stable.
Based on a same principle, it should be understood that the first double-gate transistor (T1) and the second double-gate transistor (T2) are set to be N-type transistor, the voltage of the first node (N1) is also affected by the second node (N2) and the third node (N3). The gate of the first double-gate transistor (T1) and the gate of the second double-gate transistor (T2) each is a low level signal when the first double-gate transistor (T1) and the second double-gate transistor (T2) are turned off, so that potentials of the second node (N2) and the third node (N3) are lower than the potential of the first node (N1) under the effect of the capacitance, and the leakage currents are generated by the second sub-transistor (T12) and the third sub-transistor (T23), and directions of the leakage currents are a direction flowing from the first node (N1) to the second node (N2) and a direction flowing from the first node (N1) to the third node (N3), which causes that the potential of the first node (N1) is reduced. Regarding this situation, in the present embodiment, the voltage of the first node (N1),the voltage of the second node (N2), and the voltage of the third node (N3) are set to satisfy: (V2−V1)×(V1−V3)>0, V2>V1 and V3<V1, or V2<V1 and V3>V1 may also be ensured, a leakage current between the first node (N1), the second node (N2) and the third node (N3) flows from the second node (N2) to the third node (N3) via the first node (N1), or flows from the third node (N3) to the second node (N2) via the first node (N1),In this way, the first node (N1) is less affected by the leakage currents of the transistors, and thus the voltage of the first node (N1) may remain substantially stable as well.
In one embodiment, the voltage of the first node (N1), the voltage of the second node (N2), and the voltage of the third node (N3) are set to satisfy: (V2−V1)×(V1−V3)>0, with continued reference to
It should be understood that in the pixel circuit of the present embodiment, since the second node (N2) is set to be electrically connected to the terminal of first power supply voltage signal (PVDD) through the first capacitor (C1), and the terminal of first power supply voltage signal (PVDD) is a constant high level signal, so that a potential of the second node (N2) may be affected by charging and discharging the capacitor pole plates of the first capacitor (C1) and the second capacitor (C2) simultaneously in the first stage. In the first stage, the first scan signal (S1) jumps from the low level (VGL) to the high level (VGH), and the first double-gate transistor (T1) is turned off; meanwhile, the first capacitor (C1) and the second capacitor (C2) are connected in series, and the first capacitor (C1) is connected to the constant high level signal, so that the potential V2 of the second node (N2) is expressed as: V2=(VGH−VGL)×C2/(C1+C2) +Vref1. As can be seen from this formula, compared with a condition that the first capacitor (C1) is not provided, the potential of the second node (N2) is properly reduced, so that the potential of the first node (N1) is between the potential of the second node (N2) and the potential of the third node (N3), that is, V2<V1<V3, and therefore, a situation that the leakage current flows from the second node (N2) into the first node (N1) and thus it is avoided that the potential of the first node (N1) is affected to change, further, the brightness of the light-emitting element (20) can be ensured to be relatively stable.
Further, in the embodiments of the present disclosure, the first capacitor (C1) and the second capacitor (C2) may also be set to satisfy: C1>C2. According to the above potential formula of the second node (N2), it can be seen that the first capacitor (C1) is larger, and the potential of the second node (N2) is smaller, in this way, the potential of the second node (N2) may be reduced as much as possible, so that the leakage current of the second sub-transistor (T12) flows towards the second node (N2), and the potential of the first node (N1) being changed is avoided.
Further, in an embodiment, in the embodiments of the present disclosure, the second capacitor (C2) and the third capacitor (C3) may be set to satisfy: C2≤C3. As shown in
In conclusion, in the embodiment shown in the
In another embodiment of the present disclosure, similarly, the voltage of the first node (N1), the voltage of the second node (N2), and the voltage of the third node (N3) may in an embodiment be set to satisfy: V2<V1<V3.
It should be understood that the first sub-transistor (T11) is set to be kept in the ON state in the first stage, and the second node (N2) always receives a signal from the terminal of reset signal (Vref) in this stage, and a potential of the second node (N2) is a reset signal at low level. In this way, the potential V2 of the second node (N2) is lower than the potential V1 of the first node (N1).
In one embodiment, the above-described first sub-transistor (T11) is kept in the ON state in the first stage, as shown in
The same as above is that, the effective signals of the line of initialization signal (Vini) and the line of reset signal (Vref) are both low level signals, and in order to ensure that the first sub-transistor (T11) is kept in the ON state in the first stage and the second node (N2) is configured to receive the reset signal (Vref), the first sub-transistor (T11) may be controlled to be kept in the ON state by using an initialization signal with a low level, namely as described as above, the gate of the first sub-transistor (T11) may be set to be connected to the terminal of initialization signal (Vini).
In addition to the structure of the pixel circuit may be changed to make the potential of the first node (N1), the potential of the second node (N2), and the potential of the third node (N3) satisfy: V2<V1<V3 in the above embodiments, and in other embodiments of the present disclosure, the potential of the first node (N1), the potential of the second node (N2), and the potential of the third node (N3) may also set to satisfy: V2>V1>V3.
In a similar way, two pole plates of the first capacitor (C1) are respectively connected to the terminal of first power supply voltage signal and the third node (N3), so that the first capacitor (C1) and the third capacitor (C3) form a series structure; since one end of the first capacitor (C1) is connected to the terminal of first power supply voltage signal (PVDD) (constant high level signal), compared with a condition that the first capacitor (C1) is not provided, the potential of the third node (N3) is properly reduced, so that the potential of the first node (N1) is between the potential of the third node (N3) and the potential of the second node (N2), that is, V2>V1>V3, and therefore, a situation is avoided that the leakage current flowing from the third node (N3) into the first node (N1) and the potential of the first node (N1) is affected to change, and hence, the brightness of the light-emitting element (20) can be ensured to be relatively stable.
Similarly, according to a principle that the larger the first capacitor (C1) is, the lower the potential V3 of the third node (N3) is, in the present embodiment, the first capacitor (C1) and the third capacitor (C3) may be set to satisfy: C1>C3. In this way, the potential of the third node (N3) may be reduced as much as possible, so that the leakage current of the third sub-transistor (T23) flows towards the third node (N3), and the potential of the first node (N1) being changed is avoided.
In addition, according to a formula of U=Q/C, where the capacitance C is the larger, the voltage U is the smaller, the second capacitance C2 and the third capacitance C3 may be further set to satisfy: C2≥C3. In this way, it can be ensured that the potential of the second node (N2) is raised higher, and thus the first node (N1) and the second node (N2) satisfy: V1<V2.
In another embodiment of the present disclosure, similarly, the voltage of the first node (N1), the voltage of the second node (N2), and the voltage of the third node (N3) may in an embodiment be set to satisfy: V2>V1>V3.
In a similar way, the fourth sub-transistor (T24) is set to be kept in the ON state in the first stage, and the third node (N3) is always equal to the potential of a drain of the drive transistor (T3) in this stage, and since when the first double-gate transistor (T1) and the second double-gate transistor (T2) are both turned off, that is, the reset module (12) and the compensation module (13) are both turned off, the pixel circuit (10) is in the light-emitting stage, and the drive transistor (T3) is in a non-saturated state in the light-emitting stage, the potential of the drain of the drive transistor (T3) is generally a lower level potential (the drive transistor is the P-type transistor), and In this way, the third node (N3) is a lower level potential, which achieves that the potential of the third node (N3) is lower than the potential of the first node (N1).
In one embodiment, the above-described fourth sub-transistor (T24) is kept in the ON state in the first stage, as shown in
The same as above is that, the effective signals of the line of initialization signal (Vini) and the line of reset signal (Vref) are both low level signals, and in order to ensure that the fourth sub-transistor (T24) is kept in the ON state in the first stage, the potential of the third node (N3) is kept consistent with the potential of the drain of the drive transistor (T3), the fourth sub-transistor (T24) may be controlled to be kept in the ON state by using an initialization signal (Vini) at a low level, namely, the gate of the fourth sub-transistor (T24) may be set to be connected to the terminal of initialization signal (Vini) as described above.
On the basis of the various embodiments described above, the present disclosure also limits a transmission time of a leakage current flowing into the first node (N1) from the second node (N2) and the third node (N3). In the first stage, a transmission time of a leakage current between the second node (N2) and the first node (N1) may be set to be t1, and a transmission time of a leakage current between the third node (N3) and the first node (N1) may be set to be t2. A smaller one of t1 and t2 is t0, and a frame refreshing frequency of the display panel is M HZ, where t0≥1/M.
It should be understood that the frame refresh frequency of an image of the display panel is M HZ, and time of one image frame is 1/M. In the present embodiment, a smaller one of the transmission time of the leakage current from the second node (N2) to the first node (N1) and the transmission time of the leakage current from the third node (N3) to the first node (N1) is set to be greater than or equal to the time of one image frame of the display panel, that is, to set t0≥1/M. In this way, in the light-emitting stage of the one image frame, the first node (N1) always participates in a leakage current process of the second node (N2) and in a leakage current process of the third node (N3). That is, the leakage current flows from the second node (N2) to the first node (N1) and then to the third node (N3), or the leakage current flows from the third node (N3) to the first node (N1) and then to the second node (N2). In this way, the first node (N1) is always in a balanced state of the leakage current, and the potential of the first node (N1) changes relatively less or even unchanged, so that the stability of the light-emitting brightness of the light-emitting element can be ensured.
Further, in the embodiments of the present disclosure, it may be also set that: 0≤|t1−t2|≤t0×⅕. In this way, a difference between t1 and t2 is relatively small. Relatively speaking, it can ensure that t0 is relatively large in the whole pixel driving process, so that the balance time of the leakage current of the first node (N1) is relatively longer, and correspondingly, the frame refresh frequency of the image, M HZ, of the display panel is also relatively small, which is conducive to the display panel to achieve the low-frequency drive display.
An embodiment of the present disclosure further provides a display device.
Number | Date | Country | Kind |
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202110536427.3 | May 2021 | CN | national |