DISPLAY PANEL AND DISPLAY DEVICE

Abstract

The present invention discloses a display panel, the manufacturing method of the display panel, and a display device. The display panel comprises a first substrate with a display area and a non-display area, wherein the display area comprises a plurality of transistors, and a light sensor is adjacent to the plurality of transistors.

Description

FIELD OF THE DISCLOSURE

Aspects of the present invention relate to display panel technology field, especially related to a display panel, manufacturing method, and display device thereof.

BACKGROUND

With the development of science and technology and progress, liquid crystal display becomes the mainstream of the display products due to thin body, low power and low radiation. Most of the liquid crystal displays on the market are backlit LCD monitors with LCD panels and backlight modules.

The working theory of liquid crystal panel is placing liquid crystal molecules in two parallel glass substrates and applying a driving voltage to the two glass substrates to control the direction of rotation of the liquid crystal molecules so reflect the light from the backlight module and produce a picture.

Thin Film Transistor-Liquid Crystal Display (TFT-LCD) has gradually dominated the display field due to its low power consumption, excellent picture quality and high production yield. Similarly, the thin film transistor liquid crystal display includes a liquid crystal panel and a backlight module; the liquid crystal panel comprises a Color Filter Substrate (CF Substrate), a thin film transistor substrate (TFT Substrate), and a light mask. There is a transparent electrode on the inner side of the substrate and a layer of liquid crystal molecules (Liquid Crystal, LC) between the two substrates.

With the gradual development of LCD products, people start thinking how to improve LCD with more excellent performance; for example, how to make LCD products adjust according to changes in the external environment.

Additional aspects and/or advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention. It will be apparent to those skilled in the art that various modifications and variation can be made in the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.

SUMMARY

In view of the above-mentioned drawbacks of the prior art, the technical problem to be solved by the present application is to provide a display panel, a display method and a display device with capabilities of independently adjusting brightness and contrast.

The present invention discloses a display panel, comprising: a first substrate comprising a display area and a non-display area, wherein the display area includes a plurality of transistors and a light sensor adjacent to plurality of transistors; and a second substrate disposed opposite to the first substrate.

The present invention also discloses a display panel manufacturing method, comprising: forming a first substrate and forming a second substrate disposed opposite to the first substrate; forming a plurality of transistors in a display area of the first substrate; and forming a light sensor adjacent to the transistors.

With increasing demand for the display of the actual panel by the viewer, the beneficial effect of the present application is that the application has improved the display panel by making a display panel has a capability of self-regulation. Specifically, since the light sensor is provided correspondingly in the display area of the first substrate, the outside environment of the display area can be sensed by the photosensor, and in particular, it is possible to perceive the change in the intensity of the outside light. In this way, when the light is strong, the monitor can automatically adjust to improve the brightness and enhance the contrast to avoid the display screen is too dark; on weak light, the monitor can automatically adjust to reduce the brightness and reduce the contrast to avoid the picture is too bright; so, the display device can be better, more intelligent adjustment display contrast and display, effectively enhance the audience's viewing experience. Moreover, in this application, the optical sensor is disposed between the intervals of the transistors, so the space efficiency of the substrate can be improved.

The specific embodiments of the present application have been disclosed in detail with reference to the following description and the accompanying drawings, which specify the manner in which the principles of the present application may be employed. It is to be understood that the embodiments of the present application are not limited in scope. In the context of the spirit and terms of the appended claims, the embodiments of the present application include many changes, modifications and equivalents.

The features described and/or illustrated for one embodiment may be used in one or more other embodiments in the same or similar manner, in combination with the features in other embodiments, or in addition to the features in other embodiments.

It is emphasized that the term “comprise/comprising” as used herein refers to the presence of a feature, whole piece, step or component, but does not exclude the presence or addition of one or more other features, integers, steps or components.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to provide a clearer description of the embodiments of the present application or the prior art, the following section briefly describes the drawings used in description of the embodiments or of the prior art. Apparently, the drawings in the following description are merely descriptions of some embodiments of the present application, so one of ordinary skill in the art could obtain drawings of other embodiments without any creative work basing on the following drawings.

FIG. 1 is a schematic diagram of a display panel in the present application;

FIG. 2 is a process diagram of manufacturing a display panel in the present invention; and

FIG. 3 is a schematic diagram of a display device in the present application.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The embodiments are described below in order to explain the present invention by referring to the figures. In the following detailed description, only certain exemplary embodiments of the present invention have been shown and described, simply by way of illustration. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. Accordingly, the drawings and description are to be regarded as illustrative in nature and not restrictive. All other embodiments obtained by those of ordinary skill in the art without making creative work are within the scope of this application, based on the embodiments of the present application.

Referring to FIG. 1, which a schematic diagram of a display panel, the present application discloses a display panel 100 which comprises a first substrate 30 and second substrate (not shown in figures). The first substrate 30 comprises a display area and a non-display area. The display area comprises a plurality of transistors 20; a light sensor 10 is adjacent to the plurality of transistors; the second substrate is disposed opposite to the first substrate.

In an embodiment, since the light sensor is provided correspondingly in the display area of the first substrate, the outside environment of the display area can be sensed by the photosensor, and in particular, it is possible to perceive the change in the intensity of the outside light. In this way, when the light is strong, the monitor can automatically adjust to improve the brightness and enhance the contrast to avoid the display screen is too dark; on weak light, the monitor can automatically adjust to reduce the brightness and reduce the contrast to avoid the picture is too bright; so, the display device can be better, more intelligent adjustment display contrast and display, effectively enhance the audience's viewing experience. Moreover, in this application, the optical sensor is disposed between the intervals of the transistors, so the space efficiency of the substrate can be improved.

In another embodiment, the transistor 20 comprises a gate 21, a gate insulating layer 22, a gate amorphous silicon layer 23 (α−Si), and a gate high-concentration doped N-type amorphous silicon layer (N+α−Si) from bottom to top; the gate insulating layer 22 extends outwardly, and the light sensor 10 is disposed on an extension of the gate insulating layer 22. In this case, the light sensor is provided on the outside of the gate insulating layer opposite to the transistor, and the gate insulating layer is used for insulating a space apart from the extended portion to avoid the influence of the electrical signal at the optical sensor on the transistor; thus, this setting improves the efficiency of space and reduce the waste of space.

Moreover, the extension of the gate insulating layer 22 comprises a data line layer 14, the light sensor 10 is disposed on the data line layer 14; the top of the light sensor 10 is covered with a conductive glass layer 15. In this case, the light sensor uses the data line layer as the lower electrode and the conductive glass layer as the upper electrode, so the data line layer makes the multi-function effective. Therefore, when the light sensor senses the degree of darkness of the outside light, the display device can be self-adjustment accordingly, get more adaptable to the external environment display contrast, and improve the display effect.

In another embodiment, the light sensor 10 comprises a light-sensitive high-concentration doped N-type amorphous silicon layer 11 (N+α−Si), a light-sensitive amorphous silicon layer 12 (α−Si), and a light-sensitive high-concentration doped P-type amorphous silicon layer 13 (P+α−Si) from top to bottom. In this case, the light sensor is actually a PIN photodiode in which the PN junction of the photodiode is doped with an N-type semiconductor (i.e., a high concentration of N-type amorphous silicon doped as described herein), so that when the light sensor senses changes of light intensity, the corresponding electrical signal will change, and the change of the electrical signal can be collected and analyzed; thus, the display device will be able to perceive the ambient light and shade and accordingly adjust the display contrast to improve the display effect and to enhance the viewing experience.

In another embodiment, the gate high concentration doped N-type amorphous silicon layer 24 comprises a source electrode 25 and a drain electrode 26, and the outside of the transistor 20 is covered by a passivation layer 27. In this case, a passivation layer is provided on the outside of the transistor to separate from the other portions of the first substrate to avoid mutual influence and cause unnecessary problems; wherein the passivation layer may be a gate insulating layer or other suitable materials.

Referring to FIG. 2, the process diagram of manufacturing a display panel in the present invention, and FIG. 1, the present application also discloses a process method for a display panel, comprising: Step 1: forming a first substrate and forming a second substrate disposed opposite to the first substrate; Step 2: forming a plurality of transistors in a display area of the first substrate; and Step 3: forming a light sensor adjacent to the transistors.

With increasing demand for the display of the actual panel by the viewer, the beneficial effect of the present application is that the application has improved the display panel by making a display panel has a capability of self-regulation. Specifically, since the light sensor is provided correspondingly in the display area of the first substrate, the outside environment of the display area can be sensed by the photosensor, and in particular, it is possible to perceive the change in the intensity of the outside light. In this way, when the light is strong, the monitor can automatically adjust to improve the brightness and enhance the contrast to avoid the display screen is too dark; on weak light, the monitor can automatically adjust to reduce the brightness and reduce the contrast to avoid the picture is too bright; so, the display device can be better, more intelligent adjustment display contrast and display, effectively enhance the audience's viewing experience. Moreover, in this application, the optical sensor is disposed between the intervals of the transistors, so the space efficiency of the substrate can be improved.

In another embodiment, the step of forming a plurality of transistors in a display area of the first substrate further comprises: forming a gate, a gate insulating layer, a gate amorphous silicon layer, and a gate high concentration doped N-type amorphous silicon layer from bottom to top; and forming a light sensor on an extension of the gate insulating layer. In this case, the light sensor is provided on the outside of the gate insulating layer opposite to the transistor, and the gate insulating layer is used for insulating a space apart from the extended portion to avoid the influence of the electrical signal at the optical sensor on the transistor; thus, this setting improves the efficiency of space and reduce the waste of space.

In another embodiment, the step of forming a light sensor on an extension of the gate insulating layer further comprises: forming a data line layer on the extension of the gate insulating layer; and forming the light sensor on the data line layer. In this case, the light sensor uses the data line layer as the lower electrode and the conductive glass layer as the upper electrode, so the data line layer makes the multi-function effective. Therefore, when the light sensor senses the degree of darkness of the outside light, the display device can be self-adjustment accordingly, get more adaptable to the external environment display contrast, and improve the display effect.

In another embodiment, the step of forming a light sensor adjacent to the transistors further comprises: forming a light-sensitive high-concentration doped N-type amorphous silicon layer, a light-sensitive amorphous silicon layer, and a light-sensitive high-concentration doped P-type amorphous silicon layer from top to bottom. In this case, the light sensor is actually a PIN photodiode in which the PN junction of the photodiode is doped with an N-type semiconductor (i.e., a high concentration of N-type amorphous silicon doped as described herein), so that when the light sensor senses changes of light intensity, the corresponding electrical signal will change, and the change of the electrical signal can be collected and analyzed; thus, the display device will be able to perceive the ambient light and shade and accordingly adjust the display contrast to improve the display effect and to enhance the viewing experience. Moreover, a passivation layer is provided on the outside of the transistor to separate from the other portions of the first substrate to avoid mutual influence and cause unnecessary problems; wherein the passivation layer may be a gate insulating layer or other suitable materials.

In another embodiment, the step of a plurality of transistors in a display area of the first substrate comprises: forming a source electrode and a drain electrode on the high concentration doped N-type amorphous silicon layer; and covering a passivation layer on the outside of the transistor.

Referring to FIG. 3, the schematic diagram of a display device in the present application, FIG. 1 and FIG. 2, the present application also discloses a display device 200 which includes the display panel 100 on the present application.

With increasing demand for the display of the actual panel by the viewer, the beneficial effect of the present application is that the application has improved the display panel by making a display panel has a capability of self-regulation. Specifically, since the light sensor is provided correspondingly in the display area of the first substrate, the outside environment of the display area can be sensed by the photosensor, and in particular, it is possible to perceive the change in the intensity of the outside light. In this way, when the light is strong, the monitor can automatically adjust to improve the brightness and enhance the contrast to avoid the display screen is too dark; on weak light, the monitor can automatically adjust to reduce the brightness and reduce the contrast to avoid the picture is too bright; thus, the display device can be better, more intelligent adjustment display contrast and display, effectively enhance the audience's viewing experience. Moreover, in this application, the optical sensor is disposed between the intervals of the transistors, so the space efficiency of the substrate can be improved.

Although a few embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in this embodiment without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.

It will be apparent to those skilled in the art that various modifications and variation can be made in the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.

Claims

1. A display panel, comprising a first substrate comprising a display area and a non-display area, wherein the display area includes a plurality of transistors and a light sensor adjacent to plurality of transistors;a second substrate disposed opposite to the first substrate;wherein the transistor comprises a gate, a gate insulating layer, a gate amorphous silicon layer, and a gate high-concentration doped N-type amorphous silicon layer from bottom to top; the gate insulating layer extends outwardly, and the light sensor is disposed on an extension of the gate insulating layer;wherein the extension of the gate insulating layer comprises a data line layer; the light sensor is disposed on the data line layer; the top of the light sensor is covered with a conductive glass layer;wherein the light sensor comprises a light-sensitive high-concentration doped N-type amorphous silicon layer, a light-sensitive amorphous silicon layer, and a light-sensitive high-concentration doped P-type amorphous silicon layer from top to bottom; andwherein the gate high concentration doped N-type amorphous silicon layer comprises a source electrode and a drain electrode; the outside of the transistor is covered by a passivation layer.

2. A display panel, comprising: a first substrate comprising a display area and a non-display area, wherein the display area includes a plurality of transistors and a light sensor adjacent to plurality of transistors; anda second substrate disposed opposite to the first substrate.

3. The display panel of claim 2, wherein the transistor comprises a gate, a gate insulating layer, a gate amorphous silicon layer, and a gate high-concentration doped N-type amorphous silicon layer from bottom to top; and wherein the gate insulating layer extends outwardly; the light sensor is disposed on an extension of the gate insulating layer.

4. The display panel of claim 3, wherein the extension of the gate insulating layer comprises a data line layer; the light sensor is disposed on the data line layer; and wherein the top of the light sensor is covered with a conductive glass layer.

5. The display panel of claim 3, wherein the light sensor comprises a light-sensitive high-concentration doped N-type amorphous silicon layer, a light-sensitive amorphous silicon layer, and a light-sensitive high-concentration doped P-type amorphous silicon layer from top to bottom.

6. The display panel of claim 3, wherein the gate high concentration doped N-type amorphous silicon layer comprises a source electrode and a drain electrode; the outside of the transistor is covered by a passivation layer.

7. The display panel of claim 2, wherein the transistor comprises a gate, a gate insulating layer, a gate amorphous silicon layer, and a gate high-concentration doped N-type amorphous silicon layer from bottom to top; wherein the gate insulating layer extends outwardly; the light sensor is disposed on an extension of the gate insulating layer;wherein the extension of the gate insulating layer comprises a data line layer; the light sensor is disposed on the data line layer; andwherein the top of the light sensor is covered with a conductive glass layer.

8. The display panel of claim 2, wherein the transistor comprises a gate, a gate insulating layer, a gate amorphous silicon layer, and a gate high-concentration doped N-type amorphous silicon layer from bottom to top; wherein the gate insulating layer extends outwardly; the light sensor is disposed on an extension of the gate insulating layer; andwherein the light sensor comprises a light-sensitive high-concentration doped N-type amorphous silicon layer, a light-sensitive amorphous silicon layer, and a light-sensitive high-concentration doped P-type amorphous silicon layer from top to bottom.

9. The display panel of claim 2, wherein the transistor comprises a gate, a gate insulating layer, a gate amorphous silicon layer, and a gate high-concentration doped N-type amorphous silicon layer from bottom to top; wherein the gate insulating layer extends outwardly; the light sensor is disposed on an extension of the gate insulating layer; andwherein the gate high concentration doped N-type amorphous silicon layer comprises a source electrode and a drain electrode; the outside of the transistor is covered by a passivation layer.

10. The display panel of claim 2, wherein the transistor comprises a gate, a gate insulating layer, a gate amorphous silicon layer, and a gate high-concentration doped N-type amorphous silicon layer from bottom to top; wherein the gate insulating layer extends outwardly; the light sensor is disposed on an extension of the gate insulating layer;wherein the extension of the gate insulating layer comprises a data line layer; the light sensor is disposed on the data line layer; the top of the light sensor is covered with a conductive glass layer;wherein the light sensor comprises a light-sensitive high-concentration doped N-type amorphous silicon layer, a light-sensitive amorphous silicon layer, and a light-sensitive high-concentration doped P-type amorphous silicon layer from top to bottom; andwherein the gate high concentration doped N-type amorphous silicon layer comprises a source electrode and a drain electrode; the outside of the transistor is covered by a passivation layer.

11. A display panel manufacturing method, comprising forming a first substrate and forming a second substrate disposed opposite to the first substrate;forming a plurality of transistors in a display area of the first substrate; andforming a light sensor adjacent to the transistors.

12. The display panel manufacturing method of the claim 11, wherein the step of forming a plurality of transistors in a display area of the first substrate further comprises forming a gate, a gate insulating layer, a gate amorphous silicon layer, and a gate high concentration doped N-type amorphous silicon layer from bottom to top; andforming a light sensor on an extension of the gate insulating layer.

13. The display panel manufacturing method of the claim 12, wherein the step of forming a light sensor on an extension of the gate insulating layer further comprises forming a data line layer on the extension of the gate insulating layer; andforming the light sensor on the data line layer.

14. The display panel manufacturing method of the claim 12, wherein the step of forming a light sensor adjacent to the transistors further comprises forming a light-sensitive high-concentration doped N-type amorphous silicon layer, a light-sensitive amorphous silicon layer, and a light-sensitive high-concentration doped P-type amorphous silicon layer from top to bottom.

15. The display panel manufacturing method of the claim 11, wherein the step of a plurality of transistors in a display area of the first substrate comprises forming a gate, a gate insulating layer, a gate amorphous silicon layer, and a gate high concentration doped N-type amorphous silicon layer from bottom to top;forming a light sensor on an extension of the gate insulating layer;wherein the step of forming a light sensor on an extension of the gate insulating layer further comprisesforming a data line layer on the extension of the gate insulating layer; andforming the light sensor on the data line layer.

16. The display panel manufacturing method of the claim 11, wherein the step of a plurality of transistors in a display area of the first substrate comprises forming a gate, a gate insulating layer, a gate amorphous silicon layer, and a gate high concentration doped N-type amorphous silicon layer from bottom to top;forming a light sensor on an extension of the gate insulating layer; andwherein the step of forming a light sensor adjacent to the transistors further comprisesforming a light-sensitive high-concentration doped N-type amorphous silicon layer, a light-sensitive amorphous silicon layer, and a light-sensitive high-concentration doped P-type amorphous silicon layer from top to bottom.

17. The display panel manufacturing method of the claim 11, wherein the step of a plurality of transistors in a display area of the first substrate comprises forming a source electrode and a drain electrode on the high concentration doped N-type amorphous silicon layer; andcovering a passivation layer on the outside of the transistor.

18. The display panel manufacturing method of the claim 11, wherein the step of a plurality of transistors in a display area of the first substrate comprises forming a gate, a gate insulating layer, a gate amorphous silicon layer, and a gate high concentration doped N-type amorphous silicon layer from bottom to top;forming a light sensor on an extension of the gate insulating layer;forming a source electrode and a drain electrode on the high concentration doped N-type amorphous silicon layer; andcovering a passivation layer on the outside of the transistor.