This application claims the priority of Chinese Patent Application No. 202111045950.2, filed on Sep. 7, 2021, the content of which is incorporated herein by reference in its entirety.
The present disclosure generally relates to the field of display technologies and, more particularly, relates to a display panel and a display device.
In a display panel, a pixel circuit provides driving current required for display to light-emitting elements of the display panel, and controls whether the light-emitting elements enter a light-emitting stage. Correspondingly, the pixel circuit becomes an indispensable element in most self-luminous display panels.
However, in the pixel circuit, a parasitic capacitance is often formed between a wiring connected to a gate of a driving transistor and other wirings on a same layer, and the existence of the parasitic capacitance will cause the current flowing through the light-emitting elements to change, resulting differences between actual display brightness and ideal brightness. Display effect of the display panel is affected.
One aspect of the present disclosure provides a display panel. The display panel includes a pixel circuit, a light-emitting element, and a signal line group including at least one signal line for providing control signals or input signals for transistors in the pixel circuit. The pixel circuit includes transistors including a driving transistor for providing a driving current to the light-emitting element, a data writing transistor for providing a data signal to the driving transistor, and a first transistor. The data writing transistor is connected between a first electrode of the driving transistor and a data signal line. A first electrode of the first transistor is connected to a gate of the driving transistor. The first electrode of the first transistor and a first electrode of the data writing transistor are located in a first metal layer. A side of the first electrode of the first transistor facing the first electrode of the data writing transistor is a first edge and a side of the first electrode of the data writing transistor facing the first electrode of the first transistor is a second edge. When being orthographically projected on a plane parallel to a surface of the display panel, at least part of at least one signal line in the signal line group is located between the first edge and the second edge, and the at least a partial region of the at least one signal line and the first metal layer are arranged in different layers.
Another aspect of the present disclosure provides a display device. The display device includes a display panel. a pixel circuit, a light-emitting element, and a signal line group including at least one signal line for providing control signals or input signals for transistors in the pixel circuit. The pixel circuit includes transistors including a driving transistor for providing a driving current to the light-emitting element, a data writing transistor for providing a data signal to the driving transistor, and a first transistor. The data writing transistor is connected between a first electrode of the driving transistor and a data signal line. A first electrode of the first transistor is connected to a gate of the driving transistor. The first electrode of the first transistor and a first electrode of the data writing transistor are located in a first metal layer. A side of the first electrode of the first transistor facing the first electrode of the data writing transistor is a first edge and a side of the first electrode of the data writing transistor facing the first electrode of the first transistor is a second edge. When being orthographically projected on a plane parallel to a surface of the display panel, at least a partial region of at least one signal line in the signal line group is located between the first edge and the second edge, and the at least part of the at least one signal line and the first metal layer are arranged in different layers.
Other aspects or embodiments of the present disclosure can be understood by those skilled in the art in light of the description, the claims, and the drawings of the present disclosure.
The following drawings are merely examples for illustrative purposes according to various disclosed embodiments and are not intended to limit the scope of the present disclosure.
Reference will now be made in detail to exemplary embodiments of the disclosure, which are illustrated in the accompanying drawings. Hereinafter, embodiments consistent with the disclosure will be described with reference to drawings. In the drawings, the shape and size may be exaggerated, distorted, or simplified for clarity. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts, and a detailed description thereof may be omitted.
Further, in the present disclosure, the disclosed embodiments and the features of the disclosed embodiments may be combined under conditions without conflicts. It is apparent that the described embodiments are some but not all of the embodiments of the present disclosure. Based on the disclosed embodiments, persons of ordinary skill in the art may derive other embodiments consistent with the present disclosure, all of which are within the scope of the present disclosure.
Moreover, the present disclosure is described with reference to schematic diagrams. For the convenience of descriptions of the embodiments, the cross-sectional views illustrating the device structures may not follow the common proportion and may be partially exaggerated. Besides, those schematic diagrams are merely examples, and not intended to limit the scope of the disclosure. Furthermore, a three-dimensional (3D) size including length, width, and depth should be considered during practical fabrication.
The present disclosure provides a display panel. The display panel may include a pixel circuit.
The data writing transistor T1 may be connected between a first electrode of the driving transistor T0 and a data signal line L1, and a first electrode of the first transistor T2 may be connected to a gate of the driving transistor T0 to form a first node N1.
As shown in
As shown in
As shown in
Optionally, in one embodiment, as shown in
A gate of the second transistor T3 and a gate of the third transistor T4 may receive a control signal EM simultaneously. Under the control of the control signal EM, the third transistor T4 may be in the on state or the off state. The control signal EM received by the third transistor T4 may be a pulse signal. In the light-emitting state, the control signal EM may output an effective pulse to control the third transistor T4 to be in the on state, such that the driving current provided by the driving transistor T0 may enter the light-emitting element Q to make the light-emitting element Q emit light. In the non-light-emitting state, the control signal EM may output an invalid pulse to control the third transistor T4 to be in the off state, such that the light-emitting element Q does not emit light.
Optionally, as shown in
Optionally, as shown in
The anode of the light-emitting element Q may be connected to a second power signal terminal PVEE.
Optionally, as shown in
The display panel may further include a signal line group. The signal line group may include at least one signal line that provides a control signal or an input signal to the transistors of the pixel circuit 10. For example, as shown in
As shown in
Specifically, in the data writing stage, the signal on the data signal line L1 may be written to the gate of the driving transistor T0, and the gate voltage of the driving transistor TO may be an important factor for determining the driving current. Correspondingly, the stability of the gate voltage of the driving transistor T0 may need to be high. Also, the first electrode of the first transistor T2 may be connected to the gate of the driving transistor T0. Therefore, he stability of the voltage of the first electrode of the first transistor T2 may need to be high indirectly.
Correspondingly, when a lateral electric field and then a parasitic capacitance are generated between the first electrode of the first transistor T2 and the first electrode of the data writing transistor T1, the voltage of the first electrode of the first transistor T2 may be susceptible to change, and the gate voltage of the driving transistor T0 then may also change with it. Therefore, the stability of the gate voltage of the driving transistor T0 may be affected and ultimately the display performance of the display panel may be affected.
As shown in
As shown in
To avoid the formation of a lateral electrical field when the signal line between the first edge A1 and the second edge A2 and the first electrode of the first transistor T2 and/or the first electrode of the data writing transistor T1 are in the same layer, the signal line between the first edge A1 and the second edge A2 and the first metal layer M1 may be arranged in different layers, such that unnecessary interference to the first electrode of the first transistor T2 and/or the first electrode of the data writing first transistor T1 on the same layer may be avoided. The stability of the gate voltage of the driving transistor T0 may be further improved.
It should be noted that in this embodiment, to better illustrate the relationship between the first edge A1, the second edge A2, and the electric field lines between the first edge A1 and the second edge A2, orthographic projection to the panel parallel to the surface of the display panel are used to illustrate the relationship of each structure on the plane. An orthographic projection can also be considered as a vertical projection. That is, each structure that is not originally located on the same film layer is projected vertically onto the same plane, and the relationship between each structure is explained.
Optionally, in one embodiment, the gate of the driving transistor T0 may be located in the second metal layer M1, the first electrode of the first transistor T2 may be located in the first metal layer M2, and the gate of the driving transistor T0 may be connected to the first electrode of the first transistor T2 through a via hole.
The data signal line L1 may be located on the third metal layer M3. Correspondingly, to realize the connection between the data signal line L1 and the data writing transistor T1, if no special design is made, a hole may be required to make the data signal line L1 directly connected to an active layer poly of the data writing transistor T1, that is to say, it may need to be punched from the third metal layer M3 to the active layer of the data writing transistor T1. If a distance from the position of the active layer of the data writing transistor T1 to the third metal layer M3 is relatively large, for example, as shown in
Optionally, in another embodiment of the present invention, the pixel circuit 10 may include silicon transistors and oxide semiconductor transistors. An active layer of a silicon transistor may include silicon, and an active layer of an oxide semiconductor transistor may include oxide semiconductor. In a direction perpendicular to the surface of the display panel, an oxide semiconductor transistor may include a top gate and a bottom gate located on both sides of the active layer. The top gate may be located on the side of the bottom gate facing the first metal layer M1. The first transistor T2 may be one of the oxide semiconductor transistors.
Optionally, in one embodiment, the data writing transistor T2 may be one of the aforementioned silicon transistors. The gate of the data writing transistor may be located in the second metal layer M2, and the active layer may include low temperature polysilicon.
As shown in
In this embodiment, the base substrate 11 may have a multi-layer structure, and may be a flexible insulating material base substrate. The base substrate 11 may have characteristics of stretchable, bendable, or bendable. The material may include but is not limited to polyimide amine material (PI), polycarbonate material (PC), or polyethylene terephthalate material (PET), etc.
Optionally, the buffer layer 12 may include but is not limited to an inorganic material layer or an organic material layer. The material of the inorganic material layer may include but is not limited to silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, etc. The material of the organic material layer may include but is not limited to acrylic or PI.
In one embodiment, the first transistor T2 may be an oxide semiconductor transistor. Since the first electrode of the first transistor T2 is connected to the gate of the driving transistor T0 and the gate voltage of the driving transistor T0 has an important influence on the driving current, in the light-emitting phase, the stability of the gate voltage of the driving transistor T0 may need to be very high. This may requires that when the first transistor T2 is in the off state, its leakage current may be sufficiently small. The oxide semiconductor transistor has a small leakage current. Therefore, setting the first transistor T2 as an oxide semiconductor transistor may be beneficial to stabilizing the gate voltage of the driving transistor T0.
Further, it should be noted that in this embodiment, the driving transistor may be an oxide semiconductor transistor or a silicon transistor, that is, the active layer may be the silicon-based active layer poly shown in
In addition, it should be noted that the pixel circuit shown in
That is, in conjunction with
First, the first signal line L3-1 and the second signal line L3-2 in different layers may be located between the first edge A1 and the second edge A2. Based on the characteristics of the different layers, when adjusting the distance between adjacent signal lines and the width of the signal line itself, the limitation of adjustment may be small when the layout size is limited.
Secondly, the first transistor T2 may have the top gate G1 and the bottom gate G2, and the first signal line L3-1 and the second signal line L3-2 in different layers are naturally generated correspondingly. In this embodiment, the first signal The line L3-1 and the second signal line L3-2 may be located between the first edge A1 and the second edge A2, such that two signal lines at different layers may be located between the first edge A1 and the second edge A2 at the same time. From the perspective of blocking electric field lines, two signal lines in different layers can block more electric field lines, thereby better weakening the electric field between the first edge A1 and the second edge A2. The parasitic capacitance may be reduced and the stability of the gate voltage of the driving transistor T0 may be improved.
Optionally, in another embodiment of the present disclosure, as shown in
In other words, the first signal line L3-1 and the second signal line L3-2 themselves may be directly located between the first edge A1 and the second edge A2, to directly block the electric field line between the first edge A1 and the second edge A2.
As shown in
The first edge A1 and the second edge A2 may be located at two sides formed by the first protrusion L3-1-A after extending along the second direction Y, and the first edge A1 and the second edge A2 may also located at two sides formed by the second protrusion L3-2-A after extending along the second direction Y. In some other embodiments, the first protrusion L3-1-A may also be a fold line or a curve, which may first extend along the second direction Y and then be folded to extend in the first direction X, as long as the first edge A1 and the second edge A2 are located at the two sides formed after the extension of the first protrusion L3-1-A. Similarly, the second protrusion L3-2-A may also be a fold line or a curve, which may first extend along the second direction Y and then be folded to extend in the first direction X, as long as the first edge A1 and the second edge A2 are located at the two sides formed by the extension of the second protrusion L3-2-A.
That is, in the case where the first signal line L3-1 and the second signal line L3-2 are not located between the first edge A1 and the second edge A2 and it is impossible to block the electric filed lines between the first edge A1 and the second edge A2, the wiring form of the first signal line L3-1 and the second signal line L3-2 can be improved, such that the first signal line L3-1 may include the first protrusion L3-1-A extending in the second direction Y and the second signal line L3-2 may include the second protrusion L3-2-A extending in the second direction Y. Correspondingly, the first edge A1 and the second edge A2 may be located at two sides of the first protrusion L3-1-A after extending in the second direction Y, and the first edge A1 and the second edge A2 may also located at two sides of the second convex portion L3-2-A after extending in the second direction Y.
The first signal line L3-1 and the second signal line L3-2 may be arranged in different layers, and also arranged in different layers from the first metal layer M1, that is, the first signal line L3-1, the second signal line L3-2, and the first metal layer M1 are arranged in different layers. Correspondingly, the first protrusion L3-1-A and the second protrusion L3-2-A may be also located in different layers, and at the same time, they may be located in layers different from the first metal layer M1.
In the case where the first protrusion L3-1-A and the second protrusion L3-2-A are located between the first edge A1 and the second edge A2, it may be also possible to block the electric filed lines between the first edge A1 and the second edge A2. The electric field in the local area may be weakened, thereby reducing the parasitic capacitance and enhancing the stability of the gate voltage of the driving transistor T0.
As shown in
A distance from the portion of the first signal line L3-1 located between the first edge A1 and the second edge A2 to the second edge A2 may be D21, and a distance from the portion of the signal line L3-2 located between the first edge A1 and the second edge A2 to the second edge A2 may be D22.
D11>D21, and/or, D12>D22.
That is to say, the first signal line L3-1 and the second signal line L3-2 can be further optimized to improve block of the electric field lines, on the premise that the electric field lines between the first edge A1 and the second edge A2 can be blocked.
Since the first edge A1 may be one side of the first electrode of the first transistor T2 facing the first electrode of the data writing transistor T1, and the first electrode of the first transistor T2 may be connected to the gate of the driving transistor T0, it can be understood that the first edge A1 may be connected to the gate of the driving transistor T0.
If the first signal line L3-1 and/or the second signal line L3-2 are closer to the first edge A1, the first signal line L3-1 and/or the second signal line L3-2 may also interfere with the first edge A1, which in turn may affect the stability of the gate voltage of the driving transistor T0.
To reduce the interference of the first edge A1 and fully ensure the stability of the gate voltage of the driving transistor T0, the distance from the first signal line L3-1 and/or the second signal line L3-2 to the first edge A1 may be set to be large enough, that is, D11>D21, and/or, D12>D22.
It should be noted that under the conditions of D11>D21 and D12>D22, theoretically the interference of the first edge A1 may be smallest. In this state, the stability of the gate voltage of the driving transistor T0 may be the best.
It should be noted that the length of the two-way arrows of the distance between the first signal line L3-1, the second signal line L3-2, the first edge A1 and the second edge A2 in
As shown in
0≤W0<Wx, where Wx is the smaller value of W1 and W2.
It should be noted that the aforementioned width is the width of the first signal line L3-1 and the second signal line L3-2 in a plane parallel to the surface of the display panel and perpendicular to the extending direction thereof.
Specifically, when W0=0, it may mean that the first signal line L3-1 and the second signal line L3-2 do not overlap at all; when 0<W0<Wx, it may mean that the first signal line L3-1 and the second signal line L3-1 may overlap, but the first signal line L3-1 and the second signal line L3-2 may not completely overlap.
Since the first signal line L3-1 and the second signal line L3-2 are arranged in different layers, when the first signal line L3-1 and the second signal line L3-2 completely overlap, the electric field lines blocked by the first signal line L3-1 and the second signal line L3-1 jointly may be the least. When the overlapping area of the first signal line L3-1 and the second signal line L3-2 decreases, that is, when the non-overlapping area of the first signal line L3-1 and the second signal line L3-2 increases, the electric field lines jointly blocked by the signal line L3-1 and the second signal line L3-2 will also increase accordingly.
Therefore, in the embodiment of the present disclosure, 0≤W0<Wx may be configured, such that the electric field lines between the first edge A1 and the second edge A2 may be blocked to the greatest extent, to reduce the electric field between the first edge A1 and the second edge A2 to the greatest extent. The parasitic capacitance may be reduced and the stability of the gate voltage of the driving transistor T0 may be enhanced.
Moreover, since the first signal line L3-1 and the second signal line L3-2 are arranged in different layers, and the first signal line L3-1 and the second signal line L3-2 are arranged in layers different from the first metal layer M1, when the first signal line L3-1 and the second signal line L3-2 have a small overlap area or do not overlap at all, there may not be a large impact on the first edge A1 and the second edge A2.
Optionally, in another embodiment of the present disclosure, the width W1 of the first signal line L3-1 may be larger than the width W2 of the second signal line L3-2.
Specifically, since the top gate G1 and the bottom gate G2 are located between the second metal layer M2 and the film layer where the first metal layer M1 is located, and the top gate G1 is located on the side of the bottom gate G2 facing the first metal layer M1, in a direction perpendicular to the surface of the base substrate, the distance between the first signal line L3-1 and the first metal layer M1 may be smaller than the distance between the second signal line L3-2 and the first metal layer M1, that is, the first signal line L3-1 may be closer to the first metal layer M1 than the second signal line L3-2.
Based on the electric field characteristics, the electric field intensity in the area where the first signal line L3-1 is located may be larger than the electric field intensity in the area where the second signal line L3-2 is located. A density of the electric field lines in the area where the signal line L3-1 is located may be larger, that is, the electric field lines in the area where the signal line L3-1 is located may be denser.
Therefore, in the embodiment of the present disclosure, the width of the first signal line L3-1 may be set to be larger to block more electric field lines to the greatest extent, to sufficiently weaken the electric field between the first edge A1 and the second edge A2. Therefore, the parasitic capacitance may be reduced and the stability of the gate voltage of the driving transistor T0 may be enhanced.
Optionally, in another embodiment, as shown in
Specifically, in the present embodiment, in conjunction with the circuit diagram shown in
Optionally, the third signal line L8 and the first signal line L3-1 may be arranged in the same layer. Since the top gate G1 and the bottom gate G2 may be located between the second metal layer M2 and the film layer where the first metal layer M1 is located, and the top gate G1 may be located on the side of the bottom gate G2 facing the first metal layer M1; it indirectly illustrates the distance between the first signal line L3-1 and the first metal layer M1 and the distance between the third signal line L8 and the first metal layer M1 may be same, and both may be smaller than the distance between the second signal line L3-2 and the first metal layer M1. That is, the first signal line L3-1 and the third signal line L8 may be closer to the first metal layer M1 than the second signal line L3-2.
Based on the electric field characteristics, the first signal line L3-1 and the third signal line L8 may be relatively close to the first metal layer M1, and the electric field intensity in the area where the first signal line L3-1 and the third signal line L8 are located may be larger than the electric field intensity in the area where the second signal line L3-2 is located. The electric field line density in the area where the first signal line L3-1 and the third signal line L8 are located may be larger, that is, the electric field line in the area where the first signal line L3-1 and the third signal line L8 are located may be denser.
Therefore, in the present embodiment, more signal lines may be disposed in the area with higher electric field line density to block more electric field lines to the greatest extent. Three signal lines may be located between the first edge A1 and the second edge A2, to block the electric field lines between the first edge A1 and the second edge A2. Correspondingly, the electric field between the first edge A1 and the second edge A2 may be sufficiently weakened, therefore reducing the parasitic capacitance and enhance the stability of the gate voltage of the driving transistor T0.
As shown in
Specifically, since the third signal line L8 and the first signal line L3-1 may be located on the same layer, and the third signal line L8 may also extend along the first direction X, to avoid the interference occurred between the first signal line L3-1 and the third signal line L8, the distance between the first signal line L3-1 and the third signal line L8 may need to be increased.
Moreover, when increasing the distance between the first signal line L3-1 and the third signal line L8, more electric field lines can be additionally blocked. Correspondingly, the electric field between the first edge A1 and the second edge A2 may be sufficiently weakened, therefore reducing the parasitic capacitance and enhance the stability of the gate voltage of the driving transistor T0.
It should be noted that the lengths of the bidirectional arrows of the distance between the first signal line L3-1, the second signal line L3-2, and the third signal line L8 in
As shown in
The active layer of the first transistor T2 may include a first region B1 and a second region B2.
As shown in
The second region B2 may overlap with the first signal line L3-1 and the second signal line L3-2 to form a channel region of the first transistor T2.
In the present embodiment, as shown in
Since the first signal line L3-1 and the second signal line L3-2 need to be arranged between the first edge A1 and the second edge A2 to block the electric field lines between the first edge A1 and the second edge A2, to ensure the normal operation of the pixel circuit 10, make the space of the circuit layout as compact as possible, and increase the resolution of the display panel (Pixels Per Inch, PPI), in the present embodiment of the present disclosure, the first transistor T2 may be multiplexed. First, the active layer IGZO of the first transistor T2 may be used as a capacitor plate, such that the first area B1 and the sixth signal line L2 overlap with each other to form the first capacitor C1. Secondly, the second area B2 of the first transistor T2 may overlap with the first signal line L3-1 and the second signal line L3-2, to form the channel region of the first transistor T2. Correspondingly, the limited space of the circuit layout may be utilized effectively, to accommodate more structures when the pixel circuit 10 can operate normally and make the space of the circuit layout as compact as possible.
As shown in
There may be no overlap between the first capacitor C1 and the channel region of the first transistor T2.
Specifically, a long distance between the second edge A2 and the gate of the driving transistor T0 may induce a larger space occupied by the pixel circuit and affect the resolution of the display panel. To avoid this problem, the first area B1 of the active area of the first transistor T2 may extend along a third direction Z, and the second area B2 of the active area of the first transistor T2 may extend along the first direction X, to avoid too many structures disposed in the third direction Z. When several signal lines are disposed between the first edge A1 and the second edge A2, it can be avoided that the distance between the second edge A2 and the gate of the driving transistor T0 is too far and the overall area of the pixel circuit is too larger.
As shown in
The length of the second region B2 of the active region of the first transistor T2 along the first direction X is K2, and the width of the second region B2 of the active region of the first transistor T2 along the third direction Z may be H2. K2>H2.
Specifically, since the active layer of the first transistor T2 may be used as the capacitor plate on the one hand, the first area B1 and the sixth signal line L2 may overlap with each other to form the first capacitor C1. Under the condition that it is ensured that the first capacitor C1 has a certain value, the width of the first region B1 of the active layer of the first transistor T2 in the first direction X may be as large as possible, and the length in the third direction Z may be as small as possible, to ensure the first capacitor C1 has a larger plate area and prevent the first edge A1 and the second edge A2 from being too far apart in the third direction Z at the same time.
Further, since the second region B2 of the active layer of the first transistor T2 may overlap with the first signal line L3-1 and the second signal line L3-2 to form the channel region of the first transistor T2, the length of the channel region can be appropriately extended in the first direction X, to make the length of the channel region larger than the width in the third direction Z.
Optionally, in another embodiment, the signal line group in the display panel may include at least one signal line that provides control signals or input signals for the transistors of the pixel circuit. For example, the signal line group may include the signal line L1 that provides the data signal Vdata, the signal line L2 that provides the control signal S1, the signal line L3 that provides the control signal S2, the signal line L4 that provides the control signal S3, the signal line L5 that provides the control signal S4, the signal line L6 that provides the control signal EM, the signal line L7 that provides the reset signal DVINI, the signal line L8 that provides the initialization signal VAR, and so on.
That is, the signal lines located between the first edge A1 and the second edge A2 may be not limited to the first signal line L3-1, the second signal line L3-1, and the third signal line L8, but can also be other signal lines.
That is, when being orthographically projected to the plane parallel to the surface of the display panel, the signal line group may include the fourth signal line, and at least a part of the fourth signal line may be located between the first edge A1 and the second edge A2.
The fourth signal line may be located in the fourth metal layer, and the fourth metal layer and the first metal layer M1 may be arranged in different layers.
Specifically, any signal line located between the first edge A1 and the second edge A2 can be used as the fourth signal line to block the electric field lines between the first edge A1 and the second edge A2 and weaken the electric field between the first edge A1 and the second edge A2. The parasitic capacitance may be reduced and the stability of the gate voltage of the driving transistor T0 may be enhanced.
It should be noted that, in the present disclosure, the specific function of the fourth signal line is not limited in the embodiment of the present application.
It should be noted that in the present disclosure, the fourth signal line is not shown in the drawings of the specification.
Optionally, in another embodiment, the fourth metal layer may be located between the second metal layer M2 and the first metal layer M1.
In the direction perpendicular to the surface of the display panel, the distance between the first metal layer M1 and the fourth metal layer may be smaller than the distance between the second metal layer M2 and the fourth metal layer.
Specifically, when it is closer to the area where the first metal layer M1 is located, the electric field line density between the first edge A1 and the second edge A2 may be larger, and the electric field intensity may be larger.
Correspondingly, in the direction perpendicular to the surface of the display panel, the distance between the first metal layer M1 and the fourth metal layer may be configured to be smaller than the distance between the second metal layer M2 and the fourth metal layer. Since the fourth signal line may be located in the fourth metal layer, the distance between the fourth signal line and the first metal layer M1 may be also smaller than the distance between the fourth signal line and the second metal layer M2. That is, the fourth signal line may be closer to the first metal layer M1 and may block more electric field lines to the greatest extent. Correspondingly, the electric field between the first edge A1 and the second edge A2 may be sufficiently weakened, therefore reducing the parasitic capacitance and enhance the stability of the gate voltage of the driving transistor T0.
Optionally, in another embodiment, when being orthographically projected to the plane parallel to the surface of the display panel, the distance between the fourth signal line and the first edge A1 may be larger than that the distance between the fourth signal line and the second edge A2.
Specifically, on the premise that the fourth signal line can block the electric field lines between the first edge A1 and the second edge A2, the blocking effect of the fourth signal line on the electric field lines may be further optimized.
Since the first edge A1 may be the side of the first electrode of the first transistor T2 facing the first electrode of the data writing transistor T1, and the first electrode of the first transistor T2 may be connected to the gate of the driving transistor T0, it can be understood that the first edge A1 may be connected to the gate of the driving transistor T0.
When the fourth signal line is relatively close to the first edge A1, the fourth signal line may also cause interference on the first edge A1, thereby affecting the stability of the gate voltage of the driving transistor T0.
Correspondingly, to reduce the interference phenomenon on the first edge A1 and fully ensure the stability of the gate voltage of the driving transistor T0, the distance between the fourth signal line and the first edge A1 can be sufficiently large, that is, it may be configured that the distance between the fourth signal line and the first edge A1 is larger than the distance between the fourth signal line and the second edge A2.
Optionally, in another embodiment, the signal line group in the display panel may include at least one signal line that provides control signals or input signals for the transistors of the pixel circuit. For example, the signal line group may include the signal line L1 that provides the data signal Vdata, the signal line L2 that provides the control signal S1, the signal line L3 that provides the control signal S2, the signal line L4 that provides the control signal S3, the signal line L5 that provides the control signal S4, the signal line L6 that provides the control signal EM, the signal line L7 that provides the reset signal DVINI, the signal line L8 that provides the initialization signal VAR, and so on.
That is, the signal lines located between the first edge A1 and the second edge A2 may be not limited to the first signal line L3-1, the second signal line L3-1, and the third signal line L8, but can also be other signal lines.
That is, when being orthographically projected to the plane parallel to the surface of the display panel, the signal line group may include the fifth signal line, and at least a part of the fifth signal line may be located between the first edge A1 and the second edge A2.
The fifth signal line may be located in the fifth metal layer, and the fifth metal layer and the first metal layer M1 may be arranged in different layers.
Specifically, any signal line located between the first edge A1 and the second edge A2 can be used as the fifth signal line to block the electric field lines between the first edge A1 and the second edge A2 and weaken the electric field between the first edge A1 and the second edge A2. The parasitic capacitance may be reduced and the stability of the gate voltage of the driving transistor T0 may be enhanced.
It should be noted that, in the present disclosure, the specific function of the fifth signal line is not limited in the embodiment of the present application.
Further, the fourth signal line and the fifth signal line may be located between the first edge A1 and the second edge A2. Two signal lines between the first edge A1 and the second edge A2 may be more beneficial for blocking more electric field lines between the first edge A1 and the second edge A2. Correspondingly, the electric field between the first edge A1 and the second edge A2 may be sufficiently weakened, therefore reducing the parasitic capacitance and enhance the stability of the gate voltage of the driving transistor T0.
It should be noted that in the present disclosure, the fourth signal line is not shown in the drawings of the specification.
Optionally, in another embodiment, the fourth metal layer may be located on a side of the fifth metal layer facing the first metal layer M1.
When being orthographically projected to the plane parallel to the surface of the display panel, the fourth signal line may be located on a side of the fifth signal line facing the second edge A2.
Specifically, since the first edge A1 is the side of the first electrode of the first transistor T2 facing the first electrode of the data writing transistor T1 and the first electrode of the first transistor T2 is connected to the gate of the driving transistor T0, it can be understood that the first edge A1 may be connected to the gate of the driving transistor T0.
The fourth metal layer may be located on the side of the fifth metal layer facing the first metal layer M1. That may mean that the fourth metal layer is closer to the first metal layer M1 than the fifth metal layer. When the fourth signal line is close to the first edge A1, the fourth signal line may also cause interference to the first edge A1, which in turn affects the stability of the gate voltage of the driving transistor T0.
Therefore, the fourth signal line may be disposed on the side close to the second edge A2. The influence of the fourth signal line on the first edge A1 may be reduced, to fully ensure the stability of the gate voltage of the driving transistor T0.
The present disclosure also provides a display device. As shown in
In various embodiments, the display device 13 may be a cell phone, a computer, or any other electronic device.
In the present disclosure, at least one signal line may be located between the first edge and the second edge of the display panel. That is, when being orthographically projected to the plane parallel to the surface of the display panel, at least a part of the area of at least one signal line in the signal line group may be located between the first edge and the second edge. When the lateral electric field is generated between the first electrode of the first transistor and the first electrode of the data writing transistor, the signal line located between the first edge and the second edge may block the electric field line, to weaken the electric field in the local area. Therefore, the parasitic capacitance may be reduced and the voltage stability of the first electrode of the first transistor may be improved, enhancing the stability of the gate voltage of the driving transistor.
Further, to avoid the situation that a lateral electric field is formed between the signal line between the first edge and the second edge and the first electrode of the first transistor and/or the first electrode of the data writing transistor when the signal line between the first edge and the second edge and the first electrode of the first transistor and/or the first electrode of the data writing transistor are in the same layer, the signal line between the first edge and the second edge and the first metal layer are arranged in different layers, to avoid that the first electrode of the first transistor and/or the first electrode of the data writing transistor are located in the same layer. Unnecessary interference may be reduced, to further improve the stability of the gate voltage of the drive transistor.
Various embodiments have been described to illustrate the operation principles and exemplary implementations. It should be understood by those skilled in the art that the present disclosure is not limited to the specific embodiments described herein and that various other obvious changes, rearrangements, and substitutions will occur to those skilled in the art without departing from the scope of the disclosure. Thus, while the present disclosure has been described in detail with reference to the above described embodiments, the present disclosure is not limited to the above described embodiments, but may be embodied in other equivalent forms without departing from the scope of the present disclosure, which is determined by the appended claims.
Number | Date | Country | Kind |
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202111045950.2 | Sep 2021 | CN | national |
Number | Name | Date | Kind |
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20220044636 | Mou | Feb 2022 | A1 |
20220069027 | Wang | Mar 2022 | A1 |
20220157233 | Zheng | May 2022 | A1 |
20220206622 | Yamanaka | Jun 2022 | A1 |
20220293057 | Shang | Sep 2022 | A1 |
Number | Date | Country | |
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20230076760 A1 | Mar 2023 | US |