The present disclosure relates to the field of display technology, and in particular, to a display panel, a method for manufacturing a display panel, and a display device.
In recent years, the development of full screen has been very rapid, which puts forward new needs for the modality of the screen. For full-screen display, it is very important to reduce the screen frame.
The above information disclosed in the background section is only for enhancement of understanding of the background of the present disclosure. Accordingly, it may contain information that does not form the related art that is already known in the art to a person of ordinary skill in the art.
According to a first aspect of the present disclosure, there is provided a display panel, including:
In at least one embodiment of the present disclosure, the display panel further includes:
In at least one embodiment of the present disclosure, the display panel further includes:
In at least one embodiment of the present disclosure, the insulation layer includes a first gate insulation layer, and the first gate insulation layer is provided with the third through hole;
In at least one embodiment of the present disclosure, the insulation layer includes a first gate insulation layer and a second gate insulation layer provided in sequence along a direction away from the first flexible layer, and the third through hole is provided in the first gate insulation layer and the second gate insulation layer;
In at least one embodiment of the present disclosure, the third through hole includes a first through sub-hole and a second through sub-hole;
In at least one embodiment of the present disclosure, the display panel further includes:
In at least one embodiment of the present disclosure, the display panel further includes:
In at least one embodiment of the present disclosure, the first distance is not less than 3 μm, and/or the second distance is not smaller than 3 μm.
According to a second aspect of the present disclosure, there is provided a method for manufacturing a display panel, including:
In at least one embodiment of the present disclosure, before forming the first conductive layer, the method further includes:
In at least one embodiment of the present disclosure, the forming the insulation layer on the side of the inorganic layer away from the first flexible layer includes:
According to a third aspect of the present disclosure, there is provided a display device, including the display panel as described in the first aspect.
The above and other features and advantages of the present disclosure will become more apparent by describing the example embodiments in detail with reference to the in accompanying drawings.
The reference numbers of the main components in the drawings are explained as follows:
110—Hard base substrate; 120—First flexible layer; 130—Buffer layer; 140—Second flexible layer; 141—First through hole; 150—Inorganic layer; 151—Second through hole; 51H—Second hole wall; 10—Signal line; 210—Active layer; 220—Insulation layer; 221—First gate insulation layer; 2211—First through sub-hole; 11H—First sub-hole wall; 222—Second gate insulation layer; 2221—Second through sub-hole; 21H—Second sub-hole wall; 2200—Third through hole; 00H—Third hole wall; 230—First conductive layer; 231—Adapter line; 240—Second conductive layer; ILD—Interlayer dielectric layer; 250—Third conductive layer; PVX—Passivation layer; PLN1—First planarization layer; 260—Fourth conductive layer; PLN2—Second planarization layer; 310—Pixel definition layer; 320—First electrode; 330—Light emitting functional layer; 400—Spacer.
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the examples set forth here; rather, these embodiments are provided so that the present disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided in order to give a thorough understanding of embodiments of the present disclosure.
In the drawings, thicknesses of regions and layers may be exaggerated for clarity. The same reference numbers in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted.
The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided in order to give a thorough understanding of embodiments of the present disclosure. However, those skilled in the art will appreciate that the technical solutions of the present disclosure may be practiced without one or more of the specific details, or that other methods, components, materials, etc. may be employed. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring the main technical idea of the present disclosure.
When a structure is “on” another structure, it may mean that a structure is integrally formed on another structure, or that a structure is “directly” placed on another structure, or that a structure is “indirectly” placed on another structure through another structure.
The terms “a”, “an” and “the” are used to indicate the presence of one or more elements/components/etc. The terms “include” and “comprise” are used to express the meaning of open inclusion and refer to the existence of other elements/components/etc. in addition to the listed elements/components/etc. The terms “first” and “second” are used only as marks, not as a quantitative limit on their objects.
The lower frame of the display screen is affected by the wiring of the fan-shaped region (Fanout), and the width of the lower frame is usually wider than the width of the left and right frames. In the related art, the lower frame of the display screen can be reduced by redesigning the wiring, but this method still needs to be perfected. For example, the signal line is provided with two flexible layers of polyimide (Polyimide, PI) layers, such as between the first flexible layer and the second flexible layer; an adapter hole is provided in the driving circuit layer above the two flexible layers, the adapter hole exposes the signal line, and an adapter metal layer is formed in the adapter hole to transmit the power supply voltage. However, in this solution, the adapter metal layer formed in the adapter hole is usually in direct contact with the second flexible layer, and external water vapor will enter along the second flexible layer, affecting the reliability of the display screen.
The purpose of the present disclosure is to provide a display panel, a method for manufacturing a display panel, and a display device. While reducing the frame of the display panel, it facilitates to block the entry of external water vapor, avoiding corrosion to the devices inside the display panel, so as to ensure the reliability of the display panel.
In order to achieve the above-mentioned purpose, the present disclosure adopts the following technical solutions.
As shown in
In the display panel provided by the present disclosure, the signal line 10 is provided between the first flexible layer 120 and the second flexible layer 140, which helps to reduce the width of the lower frame of the display panel. In addition, the inorganic layer 150 covers the surface of the second flexible layer 140 away from the first flexible layer 120 and the sidewall of the first through hole 141, that is, wraps the second flexible layer 140. While reducing the frame of the display panel, this structural design helps to block the entry of external water vapor and avoids corrosion to the devices in the display panel, so as to ensure the reliability of the display panel.
The components of the display panel provided by the embodiments of the present disclosure will be described in detail below in conjunction with the accompanying drawings.
The present disclosure provides a display panel, which may be an organic light-emitting diode (OLED) display panel, such as an AMOLED (Active-matrix organic light-emitting diode) display panel. It may also be a quantum dot light emitting diode (QLED) display panel, a micro light emitting diode (Micro LED) display panel, etc., which is not specifically limited in the present disclosure.
As shown in
The first flexible layer 120, the second flexible layer 140 and the inorganic layer 150 may form a base substrate of the display panel, and the second flexible layer 140 is provided on a side of the first flexible layer 120. The material of the first flexible layer 120 and the second flexible layer 140 may include polyimide (PI).
In some embodiments of the present disclosure, the display panel further includes a buffer layer 130 provided between the first flexible layer 120 and the second flexible layer 140. The material of the buffer layer 130 may include an inorganic material, and the buffer layer 130 may play a good adhesion between the flexible layer 120 and the second flexible layer 140.
The signal line 10 is provided between the first flexible layer 120 and the second flexible layer 140. The signal line 10 may be provided on the side of the buffer layer 130 close to the first flexible layer 120, or provided on the side of the buffer layer 130 away from the first flexible layer 120, which is not limited in the present disclosure. In some embodiments, the signal line 10 is provided on a side of the buffer layer 130 away from the first flexible layer 120. The second flexible layer 140 is provided with a first through hole 141, and the first through hole 141 exposes a surface of the signal line 10 away from the first flexible layer 120.
The inorganic layer 150 covers the surface of the second flexible layer 140 away from the first flexible layer 120 and the sidewall of the first through hole 141, and specifically contacts the sidewall of the second flexible layer 140 at the position of the first through hole 141, so that the second flexible layer 140 is wrapped to prevent external water vapor from entering the position of the first through hole 141 along the second flexible layer 140.
The inorganic layer 150 is provided with a second through hole 151, the orthographic projection of the second through hole 151 on the first flexible layer 120 is located within the orthographic projection of the first through hole 141 on the first flexible layer 120, and the second through hole 151 exposes the surface of the signal line 10 away from the first flexible layer 120. That is, the second through hole 151 communicates with the first through hole 141 to expose the surface of the signal line 10 away from the first flexible layer 120.
The first conductive layer 230 includes an adapter line 231 connected to the signal line 10, and the adapter line 231 at least covers the sidewall of the second through hole 151 and the surface of the signal line 10 exposed by the second through hole 151. The first conductive layer 230 may include metal material or alloy material to ensure its good electrical conductivity. The first conductive layer 230 may also be made of transparent conductive materials, such as ITO (indium tin oxide), IZO (indium zinc oxide), and the like. In the present disclosure, the adapter line 231 and the second flexible layer 140 is blocked by the inorganic layer 150. This structure helps to prevent external water vapor from penetrating into the adapter line 231 along the second flexible layer 140, and prevents corrosion to the devices such as the adapter line 231.
As shown in
The second through hole 151 has a second hole wall 51H, and the third through hole 2200 has a third hole wall 00H. In some embodiments of the present disclosure, the second hole wall 51H and the third hole wall 00H are connected to each other to form a through hole wall, and the through hole wall has at least one stepped portion, and the stepped portion can buffer the adapter line 231 to avoid its breaking.
In some embodiments of the present disclosure, a first distance L1 parallel to the direction of the first flexible layer 120 is provided between an end of the second hole wall 51H away from the first flexible layer 120 and an end of the third hole wall 00H close to the first flexible layer 120. The first distance L1 is greater than or equal to zero. As shown in
Continuously as shown in
As shown in
As shown in
In some embodiments, the first distance L1 is not less than 3 μm. In some embodiments, it may be 3 μm, 3.1 μm, 3.2 μm, 3.3 μm, 3.4 μm, 3.5 μm, 3.6 μm, 3.7 μm, 3.8 μm, 3.9 μm or 4 μm, but not limited to this. In practical applications, it can be set according to needs.
As shown in
As shown in
In some embodiments, the display panel further includes a second gate insulation layer 222, a second conductive layer (not shown in the drawing), an interlayer dielectric layer ILD and a third conductive layer 250. Among them, the second gate insulation layer 222 is provided on the side of the first conductive layer 230 away from the first flexible layer 120, and the second gate insulation layer 222 covers the surfaces of the first conductive layer 230 and the first gate insulation layer 221. The second conductive layer is provided on the surface of the second gate insulation layer 222 away from the first flexible layer 120, and the second conductive layer includes a second plate of the capacitor. The interlayer dielectric layer ILD is provided on a side of the second conductive layer away from the first flexible layer 120, and the interlayer dielectric layer ILD covers the second conductive layer and the second gate insulation layer 222. The third conductive layer 250 is provided on the side of the interlayer dielectric layer ILD away from the first flexible layer 120, the third conductive layer 250 includes the source and the drain of the transistor, and the source and the drain are connected to the active layer 210; the third conductive layer 250 is connected to the adapter line 231, and further connected to the signal line 10, which can be used to provide a power supply voltage signal to the pixel circuit, so as to apply the power supply voltage signal to the source or drain of the transistor.
As shown in
The display panel further includes a second conductive layer 240, an interlayer dielectric layer ILD and a third conductive layer 250. Among them, the second conductive layer 240 is provided between the first gate insulation layer 221 and the second gate insulation layer 222, and the second gate insulation layer 222 covers the second conductive layer 240 and the first gate insulation layer 221. The second conductive layer 240 includes the gate of the transistor and the first plate of the capacitor. The interlayer dielectric layer ILD is provided on a side of the first conductive layer 230 away from the first flexible layer 120, and the interlayer dielectric layer ILD covers the first conductive layer 230 and the second gate insulation layer 222. The third conductive layer 250 is provided on the side of the interlayer dielectric layer ILD away from the first flexible layer 120, the third conductive layer 250 includes the source and the drain of the transistor, and the source and the drain are connected to the active layer 210; and the third conductive layers 250 are connected to the adapter line 231, and further connected to the signal line 10, which can be used to provide a power supply voltage signal to the pixel circuit, so as to apply the power supply voltage signal to the source or drain of the transistor.
As shown in
In some embodiments, the end of the first sub-hole wall 11H away from the first flexible layer 120 is the boundary line between the surface of the first gate insulation layer 221 away from the first flexible layer 120 and the edge of the first through sub-hole 2211. The end of the sub-hole wall 21H close to the first flexible layer 120 is the boundary line between the surface of the second gate insulation layer 222 close to the first flexible layer 120 and the edge of the second through sub-hole 2221, where the surface of the first gate insulation layer 221 far away from the first the flexible layer 120 is in contact with the surface of the second gate insulation layer 222 close to the first flexible layer 120. At this time, the adapter line 231 located in the third through hole 2200 and the second through hole 151 covers the second sub-hole wall 21H, the first sub-hole wall 11H, the second hole wall 51H and the surface of the signal line 10 exposed by the second through hole 151.
As shown in
As shown in
In some embodiments, the second distance L2 is not less than 3 μm. In some embodiments, it may be 3 μm, 3.1 μm, 3.2 μm, 3.3 μm, 3.4 μm, 3.5 μm, 3.6 μm, 3.7 μm, 3.8 μm, 3.9 μm or 4 μm, but not limited to this. In practical applications, it can be set according to needs.
As shown in
The display panel further includes a second planarization layer PLN2, a light emitting layer and a spacer 400. The second planarization layer PLN2 is provided on the side of the fourth conductive layer 260 away from the first flexible layer 120, and the second planarization layer PLN2 covers the fourth conductive layers 260 and the first planarization layer PLN1. The light emitting layer is provided on the side of the second planarization layer PLN2 away from the first flexible layer 120. The light emitting layer includes a pixel definition layer 310 and a plurality of light emitting devices. The spacer 400 is provided on the side of the pixel definition layer 310 away from the first flexible layer 120.
The pixel definition layer 310 is provided on the side of the second planarization layer PLN2 away from the first flexible layer 120. The pixel definition layer 310 may be provided with a plurality of openings, and the range defined by each opening is the range of a light emitting device. The shape of the opening, that is, the shape of the contour of the orthographic projection of the opening on the first flexible layer 120, may be a polygon, a smooth closed curve or other shapes, which are not specifically limited here.
The light emitting device can be connected with the fourth conductive layer 260 and can emit light under the drive of the driving circuit. Taking the light emitting device being an OLED light emitting device as an example, the light emitting device may include a first electrode 320, a light emitting functional layer 330 and a second electrode stacked in sequence along a direction away from the first flexible layer 120. The first electrode 320 may be an anode, and the second electrode may be a cathode. The structure of the light emitting device is a conventional structure in the field, and will not be described in detail here.
As shown in
In step S100, a first flexible layer 120 is formed.
In step S200, a signal line 10 is formed on a side of the first flexible layer 120.
In step S300, a second flexible layer 140 is formed on a side of the signal line 10 away from the first flexible layer 120.
In step S400, a first through hole 141 is formed in the second flexible layer 140, where the first through hole 141 exposes the surface of the signal line 10 away from the first flexible layer 120.
In step S500, an inorganic layer 150 is formed on a side of the second flexible layer 140 away from the first flexible layer 120, where the inorganic layer 150 covers the surface of the second flexible layer 140 away from the first flexible layer 120 and the sidewall of the first through hole 141.
In step S600, the first conductive layer 230 is formed, where the first conductive layer 230 includes the adapter line 231.
Among them, the second through hole 151 is formed in the inorganic layer 150, the orthographic projection of the second through hole 151 on the first flexible layer 120 is located within the orthographic projection of the first through hole 141 on the first flexible layer 120, and the second through hole 151 exposes the surface of the signal line 10 away from the first flexible layer 120; the adapter line 231 at least covers the sidewall of the second through hole 151 and the surface of the signal line 10 exposed by the second through hole 151.
In the method for manufacturing the display panel provided by present disclosure, the first through hole 141 is formed in the second flexible layer 140, and then the inorganic layer 150 is formed, so that the formed inorganic layer 150 can wrap up the second flexible layer 140 at the position of the first through hole 141, so that the inorganic layer 150 is used to block the entry of external water vapor, and avoid corrosion to the devices in the display panel.
In some embodiments of the present disclosure, before step S100, it may further include providing a hard base substrate 110, and the material of the hard base substrate 110 may be glass or the like. In step S100, the first flexible layer 120 may be formed on a side of the hard base substrate 110.
As shown in
In step S501, an insulation layer 220 is formed on the side of the inorganic layer 150 away from the first flexible layer 120.
A third through hole 2200 is formed in the insulation layer 220, the insulation layer 220 covers at least part of the surface of the inorganic layer 150, and the third through hole 2200 communicates with the second through hole 151. The orthographic projection of the second through hole 151 on the first flexible layer 120 is located within the orthographic projection of the third through hole 2200 on the first flexible layer 120. The second through hole 151 has a second hole wall 51H, the third through hole 2200 has a third hole wall 00H. A first distance L1 parallel to the direction of the first flexible layer 120 is provided between the end of the second hole wall 51H away from the first flexible layer 120 and the end of the third hole wall 00H close to the first flexible layer 120, and the first distance L1 is greater than or equal to zero. The adapter line 231 covers at least part of the surface of the insulation layer 220 away from the first flexible layer 120, and at least covers the second hole wall 51H and the third hole wall 00H.
In step S501, the insulation layer 220 formed may include a single-layer or multi-layer structure. The following will describe in detail in conjunction with different embodiments.
As shown in
A first gate insulation layer 221 is formed on the side of the inorganic layer 150 away from the first flexible layer 120, and the first gate insulation layer 221 covers at least part of the surface of the inorganic layer 150 away from the first flexible layer 120.
In some embodiments, the third through hole 2200 is formed in the first gate insulation layer 221; the adapter line 231 covers at least part of the surface of the first gate insulation layer 221 away from the first flexible layer 120.
In some embodiments, the third through hole 2200 in the first gate insulation layer 221 and the second through hole 151 in the inorganic layer 150 can be formed by one etching process, or can be formed by multiple etching processes.
In some embodiments, when the first distance L1 is approximately equal to 0, the third through hole 2200 and the second through hole 151 can be formed by one etching process. For example, as shown in
When the first distance L1 is greater than 0, the third through hole 2200 and the second through hole 151 are formed using different etching processes. For example, as shown in
As shown in
In step S5011, a first gate insulation layer 221 is formed on the side of the inorganic layer 150 away from the first flexible layer 120, the first gate insulation layer 221 covers at least part of the surface of the inorganic layer 150 away from the first flexible layer 120.
In step S5012, a second gate insulation layer 222 is formed on the side of the first gate insulation layer 221 away from the first flexible layer 120, the second gate insulation layer 222 covers at least part of the surface of the first gate insulation layer 221 away from the first flexible layer 120.
In some embodiments, the third through hole 2200 is provided in the first gate insulation layer 221 and the second gate insulation layer 222; the adapter line 231 covers at least part of the surface of the second gate insulation layer 222 away from the first flexible layer 120.
In some embodiments, the third through hole 2200 in the first gate insulation layer 221 and the second gate insulation layer 222 and the second through hole 151 in the inorganic layer 150 can be formed by one etching process, or by separate etching process.
In some embodiments, when the first distance L1 is approximately equal to 0, the third through hole 2200 and the second through hole 151 can be formed by one etching process. For example, as shown in
When the first distance L1 is greater than 0, the third through hole 2200 and the second through hole 151 are formed using different etching processes. For example, as shown in
In some embodiments of the present disclosure, a first through sub-hole 2211 is formed in the first gate insulation layer 221, a second through sub-hole 2221 is formed in the second gate insulation layer 222, and the first through sub-hole 2211 and the second through sub-hole 2221 forms the third through hole 2200; the orthographic projection of the second through hole 151 on the first flexible layer 120 is located within the orthographic projection of the first through sub-hole 2211 on the first flexible layer 120, and the orthographic projection of the first through sub-hole 2211 on the first flexible layer 120 is located within the orthographic projection of the second through sub-hole 2221 on the first flexible layer 120; the first through sub-hole 2211 has a first sub-hole wall 11H, and the second through sub-hole 2221 has a second sub-hole wall 21H. A second distance L2 parallel to the direction of the first flexible layer 120 is provided between the end of the first sub-hole wall 11H away from the first flexible layer 120 and the end of the second sub-hole wall 21H close to the first flexible layer 120. The second distance L2 is greater than or equal to zero.
In some embodiments, the first through sub-hole 2211 in the first gate insulation layer 221 and the second through sub-hole 2221 in the second gate insulation layer 222 can be formed by one etching process, or can be formed by separate etching processes.
In some embodiments, when the second distance L2 is equal to 0, the first through sub-hole 2211 and the second through sub-hole 2221 can be formed by one etching process, specifically, a structure as shown in
When the second distance L2 is greater than 0, the first through sub-hole 2211 and the second through sub-hole 2221 can be formed by two etching processes, specifically, a structure as shown in
As shown in
In some embodiments of the present disclosure, neither the first distance L1 nor the second distance L2 is less than 3 μm. In some embodiments, it may be 3 μm, 3.1 μm, 3.2 μm, 3.3 μm, 3.4 μm, 3.5 μm, 3.6 μm, 3.7 μm, 3.8 μm, 3.9 μm or 4 μm, but not limited to this. In practical applications, it can be set according to needs.
As shown in
In step S700, an interlayer dielectric layer ILD, a third conductive layer 250, a passivation layer PVX, a first planarization layer PLN1, a fourth conductive layer 260, a second planarization layer PLN2 and a light emitting layer, etc., are formed on the side of the first conductive layer 230 away from the first flexible layer 120 in sequence. This step can specifically adopt conventional methods in the art, which will not be described in detail here.
Embodiments of the present disclosure also provide a display device, including a display panel. The display panel may be the display panel in any of the above embodiments. For its specific structure and beneficial effects, reference can be made to the above embodiments of the display panel, which will not be repeated here. The display device of the present disclosure may be an electronic equipment such as a mobile phone, a tablet computer, and a television, which will not be listed here.
It should be noted that although the steps of the method in the present disclosure are described in a specific order in the drawings, this does not require or imply that these steps must be performed in the specific order, or that all the steps shown must be performed to more than one step can be combined into one step for execution, and/or one step can be decomposed into multiple steps for execution, which should be considered as a part of the present disclosure.
It is understandable that the present disclosure does not limit its application to the detailed structure and arrangement of the components proposed in this specification. The present disclosure can have other embodiments, and can be implemented and implemented in a variety of ways. The present disclosure disclosed and limited by the description extends to all alternative combinations of two or more individual features mentioned or apparent in the text and/or the drawings. All these different combinations constitute a plurality of alternative aspects of the present disclosure. The embodiments of the description describe the best known methods for realizing the present disclosure, and will enable those skilled in the art to take advantage of the present disclosure.
The present disclosure is a National Stage of International Application No. PCT/CN2022/087979 filed on Apr. 20, 2022, the entire contents of which are incorporated herein by reference.
Filing Document | Filing Date | Country | Kind |
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PCT/CN2022/087979 | 4/20/2022 | WO |