The present application relates to a field of display technologies, and more particularly to a display panel and a manufacturing method thereof.
Currently, low temperature polysilicon (LTPS) array substrate products are composed of independent switching elements—thin-film transistors (TFTs), storage capacitors (Csts), and pixel transparent electrodes (or pixel electrodes). Semiconductor performance of the thin-film transistors is enhanced by ion implantation. Under electric field of scanning lines (gate), charging and discharging processes of the pixel transparent electrodes (or pixel electrode) are achieved. Voltage of a lower plate of the storage capacitors is adjusted to control rotation angles of liquid crystal molecules, thereby achieving colorful display effect of liquid crystal display products.
However, each of low temperature polysilicon array substrates of existing liquid crystal displays are provided with a light-shielding layer (LS) under the thin-film transistors. The light-shielding layer affects flatness of a surface under the channel section of the thin-film transistor semiconductors and cause the low temperature polysilicon array substrates cannot maintain a completely flat state.
Therefore, it is necessary to provide a new display panel and a manufacturing method thereof to overcome existing problems of prior art.
An object of the present disclosure is to provide a display panel and a manufacturing method thereof that removes light-shielding layers (LS) that are disposed on existing array substrate to maintain flatness under a surface of the semiconductor channel section of the thin-film transistors. Also, light-shielding layers are added on the polarizers corresponding to the thin-film transistors. After being attached on the polarizers of the liquid crystal display products, light-shielding layers are attached on outside of the polarizers to block the light source of the backlight, thereby protecting the semiconductor channel sections of the thin-film transistors from light. Cost of masks used by the light-shielding layer is saved and production cycle of the array substrate is shortened at the same time. Therefore, production cycle of the overall processes of the display panels are shortened.
In order to solve the above problems, an embodiment of the present disclosure provides a display panel, comprising: an array substrate, a backlight, and an array substrate polarizer. Specifically, the array substrate comprises a plurality of thin-film transistors. The backlight disposed under the array substrate, wherein the backlight is configured to provide a light source. The array substrate polarizer disposed on a surface of the array substrate facing the backlight, wherein the array substrate polarizer comprises a plurality of light-shielding portions corresponding to the thin-film transistors.
Furthermore, the array substrate polarizer comprises: a polarizer body, wherein the light-shielding portions are disposed on a surface of the polarizer body away from the array substrate.
Furthermore, the array substrate polarizer comprises: a first adhesive layer and a second adhesive layer, wherein the first adhesive layer is configured to bond the polarizer body with the array substrate. The second adhesive layer is configured to bond the polarizer body with the backlight.
Furthermore, the array substrate comprises: a substrate layer, a buffer layer, and a driving circuit layer, wherein the substrate layer is disposed on a surface of the array substrate polarizer on which the light-shielding portions are disposed. The buffer layer is disposed on a surface of a side of the substrate layer. The driving circuit layer is disposed on a surface of the buffer layer away from the substrate layer. The thin-film transistors are disposed in the driving circuit layer.
Furthermore, each of the thin-film transistors comprises: an active layer, a gate insulating layer, a gate layer, an active layer, and an interlayer insulating layer that are laminated. The active layer is disposed on a surface of the array substrate polarizer on which the light-shielding portions are disposed. The gate insulating layer disposed on a surface of the gate layer away from the polarizer of the array substrate. The gate layer disposed on a surface of the gate insulating layer away from the active layer. The interlayer insulating layer disposed on a surface of the gate layer away from the gate insulating layer. The source and drain layer disposed on a surface of the interlayer insulating layer away from the gate layer.
Furthermore, the light-shielding portions correspond to the active layer.
Furthermore, the active layer comprises: a doped section and a semiconductor channel section. The light-shielding portions correspond to the semiconductor channel section.
Another embodiment of the present disclosure provides a manufacturing method of a display panel, comprising steps of:
forming an array substrate having a plurality of thin-film transistors;
providing an array substrate polarizer; bonding the array substrate polarizer with a lower surface of the array substrate; forming a plurality of light-shielding portions on a surface of the array substrate polarizer, wherein the light-shielding portions correspond to the thin-film transistors; and
assembling the backlight to the lower surface of the array substrate.
Furthermore, the array substrate polarizer comprises: a polarizer body, a first adhesive layer disposed on a surface of the polarizer body; and a second adhesive layer disposed on another surface of the polarizer body. The step of bonding the array substrate polarizer with the lower surface of the array substrate comprises: bonding the array substrate polarizer with the lower surface of the array substrate by the first adhesive layer. The step of assembling the backlight to the lower surface of the array substrate comprises: assembling the backlight to the lower surface of the array substrate by the second adhesive layer.
Furthermore, the step of forming the array substrate comprises steps of:
forming an active layer comprising a semiconductor channel section and a doped section;
forming a gate insulating layer on a surface of the active layer away from the array substrate polarizer;
forming a gate layer on a surface of the gate insulating layer away from the active layer and patterning the gate layer;
forming an interlayer insulating layer on a surface of the gate layer away from the gate insulating layer; and
forming a source and drain layer on a surface of the interlayer insulating layer away from the gate layer and patterning the source and drain layer;
wherein in the step of forming the light-shielding portions, the light-shielding portions are bonded with a surface of the array substrate polarizer away from the array substrate and the light-shielding portions correspond to the semiconductor channel section.
Beneficial effects of the present disclosure are to provide a display panel and a manufacturing method thereof that removes light-shielding layers (LS) that are disposed on existing array substrate to maintain flatness under a surface of the semiconductor channel section of the thin-film transistors. Also, light-shielding layers are added on the polarizers corresponding to the thin-film transistors. After being attached on the polarizers of the liquid crystal display products, light-shielding layers are attached on outside of the polarizers to block the light source of the backlight, thereby protecting the semiconductor channel sections of the thin-film transistors from light. Cost of masks used by the light-shielding layer is saved and production cycle of the array substrate is shortened at the same time. Therefore, production cycle of the overall processes of the display panels are shortened.
Preferred embodiments of the present disclosure are described in conjunction with the accompanying drawings to comprehensively introduce the technical schemes of the present disclosure to people with ordinary skills in the art and to demonstrate enablement of the present disclosure by exemplification. Therefore, those skilled in the art will more readily understand how to implement the present disclosure. The present disclosure may, however, be embodied in many different forms and embodiments and the scope of the present disclosure is not limited to the embodiments described herein.
Directional terminology mentioned in the present disclosure, such as “top”, “bottom”, “front”, “back”, “left”, “right”, “inner”, “outer”, “lateral”, etc., is used with reference to the orientation of the figures being described. The directional terms used in the drawings are used for purposes of illustration and is not intended to limit the scope of the present disclosure.
In the drawings, elements with identical structures are indicated by identical reference numbers, and elements with similar structure or function are denoted by similar reference numerals. Moreover, size and thickness of each component shown in the drawings are arbitrarily shown for ease of understanding and description. The present disclosure does not limit the size and thickness of each elements.
When an element is described as “disposed on” another element, the element can be placed directly on a surface of another element. There can also be an intermediate element. The element is placed on the intermediate element and the intermediate element is placed on another element. When an element is described as “installed to” or “connected to” another element, it can be directly understood as “install” or “connect” or an element is “installed to” or “connected to” another element via an intermediate element.
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In the present embodiment, the array substrate 1 further includes a planarization layer 114, an anode layer 115, and a pixel defining layer 116. Specifically, the planarization layer 114 is disposed on a surface of the driving circuit layer 113 away from the substrate. The anode layer 115 is disposed on a surface of the planarization layer 114 away from a side of the driving circuit layer 113. The anode layer 115 is electrically connected to the driving circuit layer 113 for transmitting an electrical signal. The pixel defining layer 116 is disposed on a surface of a side of the anode layer 115 away from the planarization layer 114. An organic light emitting layer (not shown) is further disposed on the pixel defining layer 116. The organic light emitting layer is disposed opposite to the anode layer 115. The organic light emitting layer is connected to the anode layer 115 through the pixel defining layer 116, such that the organic light-emitting layer obtains an electrical signal for emitting light.
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a step S1 of forming an array substrate 1 having a plurality of thin-film transistors 10;
a step S2 of providing an array substrate polarizer 2, bonding the array substrate polarizer 2 with a lower surface of the array substrate 1; forming a plurality of light-shielding portions 20 on a surface of the array substrate polarizer 1, wherein the light-shielding portions 20 correspond to the thin-film transistors 10; and
a step S3 of assembling the backlight 3 to the lower surface of the array substrate 1.
The array substrate polarizer 2 includes a polarizer body 203, a first adhesive layer 202, and a second adhesive layer 204. The first adhesive layer 202 disposed on a surface of the polarizer body 203, and a second adhesive layer 204 disposed on another surface of the polarizer body. The step of bonding the array substrate polarizer 2 with the lower surface of the array substrate 1 includes bonding the array substrate polarizer 2 with the lower surface of the array substrate 1 by the first adhesive layer 202. The step of assembling the backlight 3 to the lower surface of the array substrate 1 includes assembling the backlight 3 to the lower surface of the array substrate 1 by the second adhesive layer 204.
In order to maintain adhesion of the first adhesive layer 202 and the second adhesive layer 204, a release paper 201 is attached on a side of the first adhesive layer 202. The surface of the polarizer body 203 that is disposed away from the release paper 201 includes a plurality of light-shielding portions 20. A protective film 205 is attached to a side of the second adhesive layer 204 to form the array substrate polarizer 2. The structure of the array substrate polarizer 2 is schematically shown in
The present disclosure maintains flatness of a surface under the semiconductor channel section 11 of the thin-film transistor 10 by removing the light-shielding layer (LS) of the existing array substrate. Also, the light-shielding portions 20 are added on the array substrate polarizer 2 corresponding to the thin-film transistor 10 to protect the thin-film transistor 10 from be affected by light and to save production cost and time.
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a step S11 of forming an active layer 101 on an upper surface of the buffer layer 112, and doping the active layer 101 to form a semiconductor channel section 12 and a doped section 11 on the active layer 101.
A step S12 of forming a gate insulating layer 102 on a surface of the active layer 101 away from the array substrate polarizer 2.
A step S13 of forming a gate layer 103 on a surface of the gate insulating layer 102 away from the active layer 102 and patterning the gate layer 103.
A step S14 of forming an interlayer insulating layer 104 on a surface of the gate layer 103 away from the gate insulating layer 102, and defining a first through hole 21 and a second through hole 22 on an upper surface of the interlayer insulating layer 104. Bottom of the first through hole 21 is the source section of the doped section 11 and bottom of the second through hole 22 is the drain section of the doped section 11.
A step S15 of forming a source and drain layer 105 on a surface of the interlayer insulating layer 104 away from the gate layer 103 and patterning the source and drain layer 105, filling the first through hole 21 and the first The two through hole holes 22 with the source and drain layer 105, forming a source 31 at a position opposite to the first through hole 21, and forming a drain 32 at a position opposite to the second through hole 22.
In the step of forming the light-shielding portions 20, the light-shielding portions 20 are bonded with the surface of the array substrate polarizer 2 away from the array substrate 1. The light-shielding portion 20 corresponds to the semiconductor channel section 11 of the active layer 101 to protect the semiconductor channel section 11 from being affected by light.
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a step S21 of providing a substrate layer 111. Material of the substrate layer 111 is polyimide (PI) or other buffering material, which is functional for buffering protection.
A step S22 of forming a buffer layer 112 on an upper surface of the substrate layer 111. The buffer layer 112 includes a single layer or a multi-layer structure. Material of the buffer layer 112 is generally SiOx, SiNx, or a mixture thereof. The substrate layer 111 or the buffer layer 112 is functional for buffering protection.
A step S23 of forming a driving circuit layer 113 on a surface of the buffer layer 112 away from the substrate layer 111. The driving circuit layer 113 has a plurality of thin-film transistors 10.
A step S24 of forming a planarization layer 114 on a surface of the driving circuit layer 113 away from the buffer layer 112.
A step S25 of forming an anode layer 115 on a surface of the planarization layer 114 away from the driving circuit layer 113. The anode layer 115 is electrically connected to the source and drain layer 105 for transmitting electrical signals.
A step S26 of forming the pixel defining layer 116 on a surface of the anode layer 115 away from the planarization layer 114 and exposing the anode layer 115. An organic light emitting layer (not shown) is further disposed on the pixel defining layer 116. The organic light emitting layer is disposed opposite to the anode layer. The organic light emitting layer is connected to the anode layer through the pixel defining layer 116, such that the organic light-emitting layer obtains an electrical signal for emitting light.
Beneficial effects of the present disclosure are to provide a display panel and a manufacturing method thereof that removes light-shielding layers (LS) that are disposed on existing array substrate to maintain flatness under a surface of the semiconductor channel section of the thin-film transistors. Also, light-shielding layers are added on the polarizers corresponding to the thin-film transistors. After being attached on the polarizers of the liquid crystal display products, light-shielding layers are attached on outside of the polarizers to block the light source of the backlight, thereby protecting the semiconductor channel sections of the thin-film transistors from light. Cost of masks used by the light-shielding layer is saved and production cycle of the array substrate is shortened at the same time. Therefore, production cycle of the overall processes of the display panels are shortened.
The above are merely the preferred embodiments of the present disclosure. It should be appreciated that a person skilled in the art may further make modifications and improvements without departing from the principle of the present disclosure, and these modifications and improvements shall also fall within the scope of the present disclosure.
Number | Date | Country | Kind |
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201910404859.1 | May 2019 | CN | national |
Filing Document | Filing Date | Country | Kind |
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PCT/CN2019/089948 | 6/4/2019 | WO | 00 |