The present disclosure relates to, but not limited to, the field of display, in particular to a display substrate and a display apparatus.
An Organic Light Emitting Diode (OLED) and a Quantum-dot Light Emitting Diode (QLED) are active light-emitting display devices and have advantages of self-illumination, wide viewing angle, high contrast, low power consumption, extremely high response speed, lightness and thinness, bendability, and so on. With constant development of display technologies, a flexible display apparatus using the OLED or the QLED as a light-emitting device and employing a Thin Film Transistor (TFT) for signal control has become a mainstream product in the current display field. The ever-increasing demand for image quality also poses new challenges for development of current OLED and QLED technologies.
On the one hand, an embodiment of the present disclosure provides a display substrate, including: a base substrate; and a plurality of sub-pixels arranged in an array, wherein at least one of the plurality of sub-pixels includes a pixel driving circuit and a light-emitting device, the plurality of sub-pixels form an array of M rows*N columns, and M and N are positive integers greater than or equal to 1: the pixel driving circuit includes a plurality of transistors, and the plurality of transistors include driving transistors; and the light-emitting device includes a first electrode.
The base substrate includes: a first initialization signal line and a second initialization signal line; and the first initialization signal line and the second initialization signal line extend in a first direction, and the first direction is an extension direction of sub-pixel rows; wherein the first initialization signal line is respectively electrically connected with a mth row of sub-pixels, and is configured to transmit a first initialization signal to a control electrode of a driving transistor of the mth row of sub-pixels; and the second initialization signal line is respectively electrically connected with a (m−1)th row of sub-pixels, and is configured to transmit a second initialization signal to a first electrode of a light-emitting device of the (m−1)th row of sub-pixels; in a second direction, a projection of the first initialization signal line on the base substrate is located on one side of a projection of the second initialization signal line on the base substrate away from a projection of the (m−1)th row of sub-pixels on the base substrate, the second direction is an extension direction of sub-pixel columns, and m is a positive integer greater than or equal to 1 and less than or equal to M; and the first initialization signal is different from the second initialization signal.
Optionally, the first initialization signal line and the second initialization signal line are located between driving transistors of two adjacent rows of sub-pixels, and located on a same side of any row of driving transistors in the second direction.
Optionally, in the second direction, a width of the first initialization signal line is different from a width of the second initialization signal line.
Optionally, in the second direction, the width of the second initialization signal line is greater than the width of the first initialization signal line.
Optionally, in the second direction, the width of the second initialization signal line is 1.3-2.4 times the width of the first initialization signal line.
Optionally, the display substrate further includes: a reset signal line, wherein the reset signal line extends in the first direction and is configured to transmit a reset signal to the pixel driving circuit; the plurality of transistors further include: a first reset transistor and a second reset transistor; and the first reset transistor is configured to transmit the first initialization signal on the first initialization signal line to the control electrode of the driving transistor of the mth row of sub-pixels under control of the reset signal; and the second reset transistor is configured to transmit the second initialization signal on the second initialization signal line to the first electrode of the light-emitting device of the (m−1)th row of sub-pixels under control of the reset signal.
Optionally, in the second direction, the reset signal line, the second initialization signal line, and the first initialization signal line are arranged in sequence in a direction away from the driving transistor of the mth row of sub-pixels.
Optionally; in a direction perpendicular to the display substrate, a driving circuit layer includes a semiconductor layer, a first conductive layer, a second conductive layer, a third conductive layer and a fourth conductive layer disposed on the base substrate in sequence; and the semiconductor layer includes an active layer of the plurality of transistors, and the active layer includes channel regions and source-drain regions of the transistors; the first conductive layer includes a reset signal line and control electrodes of the transistors; the second conductive layer includes the first initialization signal line and the second initialization signal line; and the third conductive layer includes a first power supply line, and the fourth conductive layer includes a second power supply line and a data signal line.
Optionally; the display substrate further includes: a third initialization signal line extending in the second direction, wherein the third initialization signal line and the first initialization signal line are disposed in different layers, and the third initialization signal line is electrically connected with the first initialization signal line or the second initialization signal line.
Optionally, the third conductive layer further includes the third initialization signal line.
Optionally, the third initialization signal line and the first initialization signal line are electrically connected and distributed in a mesh shape.
Optionally, the at least one column of sub-pixels is disposed between the adjacent third initialization signal lines.
Optionally, the at least two first power supply lines are disposed between the adjacent third initialization signal lines.
Optionally, the plurality of sub-pixels include red sub-pixels emitting red light, blue sub-pixels emitting blue light, and green sub-pixels emitting green light, and the plurality of sub-pixel columns include red-blue pixel columns and green pixel columns; the red-blue pixel columns include the red sub-pixels and the blue sub-pixels disposed alternately in the second direction; the green pixel columns include the green sub-pixels disposed in sequence in the second direction; and the third initialization signal line is located in the red-blue pixel columns.
Optionally, a shape of the third initialization signal line electrically connected with the nth column of red-blue pixel columns is the same as a shape of the third initialization signal line electrically connected with the (n+1)th column of red-blue pixel columns, and n is a positive integer greater than or equal to 1 and less than or equal to N.
Optionally, the third initialization signal line includes a first extension portion, a second extension portion and a third extension portion connected in sequence in the second direction. The first extension portion extends in the second direction and is electrically connected with the first initialization signal line through a via hole. An extension direction of the third extension portion is different from an extension direction of the first extension portion, the second extension portion is configured to connect the first extension portion with the third extension portion, and an extension direction of the second extension portion deviates from the second direction.
Optionally, a projection of the first extension portion on the base substrate has an overlapped region with projections of the reset signal line, the first initialization signal line and the second initialization signal line on the base substrate.
Optionally, the first extension portion is connected with a first pole of a first transistor through a via hole.
Optionally, the second extension portion and the first extension portion form an angle greater than 90° and less than 180°; and the third extension portion and the second extension portion form an angle greater than 90° and less than 180°.
Optionally, the plurality of transistors further include: a second transistor, a first pole of the second transistor is electrically connected with a second pole of the driving transistor, and a second pole of the second transistor is electrically connected with the control electrode of the driving transistor; and the second conductive layer further includes: a shielding portion, the shielding portion is electrically connected with the first power supply line, a projection of the shielding portion on the base substrate covers at least part of a source-drain region of the second transistor, and the projection of the shielding portion on the base substrate and a projection of the data signal line on the base substrate are located between the projections of the adjacent data signal lines on the base substrate.
Optionally, the third conductive layer further includes a fourth connection portion and a fifth connection portion, the fourth conductive layer further includes a seventh connection portion, the seventh connection portion is electrically connected with the fourth connection portion and the fifth connection portion. The fourth connection portion and the fifth connection portion are different in shape.
On the other hand, an embodiment of the present disclosure further provides a display apparatus, including the display substrate according to any one of the aforementioned embodiments.
In the display substrate and the display apparatus according to the embodiments of the present disclosure, a gate of the driving transistor of the mth row of sub-pixels is reset by adopting the first initialization signal line, and a first electrode of a light-emitting element of the (m−1)th row of sub-pixels is reset by adopting the second initialization signal line, and the first initialization signal and the second initialization signal are different signals, so that the gate of the driving transistor and the first electrode of the light-emitting element are reset better, and thus in a black state, an OLED display substrate can be guaranteed to have lower brightness to improve display uniformity. In addition, the embodiments of the present disclosure further provide the display substrate and the display apparatus, which have the third initialization signal lines distributed in a specific pixel column, and the third initialization signal lines and the first initialization signal line or the second initialization signal line are electrically connected in a mesh shape, thereby significantly reducing impedance of the initialization signal lines and improving picture quality.
Accompanying drawings are configured to provide a further understanding of technical solutions of the present disclosure, constitute a part of the specification, are configured to explain the technical solutions of the present disclosure together with embodiments of the present disclosure, and do not limit the technical solutions of the present disclosure.
In order to make the objective, technical solutions and advantages of the embodiments of the present disclosure clearer, the technical solutions of the embodiments of the present disclosure will be described clearly and completely with reference to accompanying drawings of the embodiments of the present disclosure. The embodiments described below are part of the embodiments of the present disclosure, but not all the embodiments. On the basis of the embodiments described in the present disclosure, all other embodiments obtained by those ordinarily skilled in the art without inventive efforts fall within the protection scope of the present disclosure.
Unless otherwise defined, the technical or scientific terms used here shall have the usual meanings understood by a person of ordinary skill in the art to which the present invention belongs. Ordinal numbers such as “first”, “second” and “third” in this specification are disposed to avoid confusion of constituent elements, and are not intended to limit in quantity.
In this specification, for convenience, words and phrases indicating orientation or positional relationship, such as “middle”, “upper”, “lower”, “front”, “rear”, “vertical”, “horizontal”, “top”, “bottom”, “inside” and “outside” are used to describe the positional relationship of constituent elements with reference to the accompanying drawings, are only to facilitate description of this specification and description simplification, rather than indicating or implying that the indicated apparatus or element must have a specific orientation or be constructed and operated in the specific orientation, and therefore cannot be understood as limitation to the present disclosure. The positional relationship of the constituent elements is appropriately changed according to the direction in which each constituent element is described. Therefore, it is not limited to the words and phrases described in the specification, and can be appropriately replaced according to the situation.
In the specification, unless otherwise expressly specified and limited, the terms “installed”. “linked” and “connected” should be construed in a broad sense. For example, it may be a fixed connection, or a detachable connection, or an integral connection; it may be a mechanical connection, or an electrical connection; and it may be a direct connection, or an indirect connection through an intermediate piece, or internal communication between two elements. Those skilled in the art may understand the specific meaning of the above terms in the present disclosure according to the specific situation.
In the specification, a transistor refers to an element including at least three terminals of a gate electrode, a drain electrode and a source electrode. The transistor has a channel region between the drain electrode (a drain electrode terminal, a drain region or the drain electrode) and the source electrode (a source electrode terminal, a source region or the source electrode), and current can flow through the drain electrode, the channel region and the source electrode. Note that in the specification, the channel region refers to a region through which the current mainly flows.
In the specification, a first pole may be the drain electrode and a second pole may be the source electrode, or the first pole may be the source electrode and the second pole may be the drain electrode. Functions of the “source electrode” and the “drain electrode” are interchanged sometimes when transistors of opposite polarities are used or when a direction of the current changes during circuit operation. Therefore, in the specification, the “source electrode” and the “drain electrode” may be interchanged, and a “source terminal” and a “drain terminal” may be interchanged.
In the specification. “electrical connection” includes a case where the constituent elements are connected together by an element having a certain electrical effect. The “element having the certain electrical effect” is not particularly limited as long as it can give and receive electrical signals between the connected constituent elements. Examples of the “element having the certain electrical effect” include not only electrodes and wirings, but also switching elements such as the transistor, a resistor, an inductor, a capacitor, other elements having various functions, and the like. The scale of the accompanying drawings in the present disclosure may be used as a reference in the actual process, but is not limited to this, for example: a width-to-length ratio of a channel, thickness and spacing of each film layer, and a width and spacing of each signal line may be adjusted according to actual needs. The number of pixels in a display substrate and the number of sub-pixels in each pixel are not limited to the quantity shown in the figure, and the accompanying drawings described in the present disclosure are only schematic structural diagrams.
In the specification. “parallel” refers to a state where an angle formed by two straight lines is −10° or more and 10° or less, and therefore also includes a state where the angle is −5° or more and 5° or less. In addition. “vertical” refers to a state where the angle formed by the two straight lines is 80° or more and 100° or less, and therefore also includes a state where the angle is 85° or more and 95° or less.
In the specification, a “film” and a “layer” may be interchanged. For example, a “conductive layer” may be replaced with a “conductive film” in some cases. Similarly, an “insulating film” may be replaced with an “insulating layer” in some cases.
In the specification, shapes such as a triangle, a rectangle, a trapezoid, a pentagon or a hexagon refer to corresponding shapes that approximate triangle rectangle, trapezoid, pentagon or hexagon within a range of process and measurement errors. During the actual process, deformation such as a chamfer, an arc edge, a rounded corner, and concave-convex generated within the tolerance range may be included.
“About” in the present disclosure refers to a numerical value within an allowed range of the process and measurement errors without strictly limiting the limit.
In an exemplary implementation, the first color sub-pixel P1 may be a red sub-pixel (R) emitting red light, and the pixel driving circuit of the first color sub-pixel P1 is electrically connected with a first electrode of a light-emitting device emitting red light. The second color sub-pixel P2 may be a blue sub-pixel (B) emitting blue light, and the pixel driving circuit of the second color sub-pixel P2 is electrically connected with a first electrode of a light-emitting device emitting blue light. The third color sub-pixel P3 may be a green sub-pixel (G) emitting green light, and the pixel driving circuit of the third color sub-pixel P3 is electrically connected with a first electrode of a light-emitting device emitting green light. In an exemplary implementation, a shape of a first electrode of a sub-pixel may be a rectangle, a rhombus, a pentagon or a hexagon. First electrodes of the four sub-pixels may be arranged in a square manner to form GGRB pixels arrangement, as shown in
In an exemplary implementation, a driving circuit layer 102 of each sub-pixel may include a plurality of transistors and a plurality of storage capacitors included in a pixel driving circuit. The pixel driving circuit may be a 2T1C, 3T1C, 4T1C, 5T1C, 5T2C, 6T1C, 7T1C or 8T1C structure, where T represents a thin film transistor and C represents a storage capacitor. In
As shown in
In an exemplary implementation, the organic light-emitting layer 303 may include a Hole Injection Layer (HIL), a Hole Transport Layer (HTL), an Electron Block Layer (EBL), an Emitting Layer (EML), a Hole Block Layer (HBL), an Electron Transport Layer (ETL) and an Electron Injection Layer (EIL) which are stacked. In an exemplary implementation, hole injection layers of all the sub-pixels may be a common layer connected together, electron injection layers of all the sub-pixels may be a common layer connected together, hole transport layers of all the sub-pixels may be a common layer connected together, electron transport layers of all the sub-pixels may be a common layer connected together, hole block layers of all the sub-pixels may be a common layer connected together, and light-emitting layers and electron block layer of adjacent sub-pixels may overlap slightly, or may be isolated.
In an exemplary implementation.
A first pole of the first reset transistor T1 is connected with a first initialization signal terminal INIT1, a control electrode of the first reset transistor T1 is connected with a first reset signal terminal Re1, and a second pole of the first reset transistor T1 is connected with the first node N1. When a conducting level scan signal is applied to the first reset signal terminal Re1, the first reset transistor T1 transmits a first initialization signal to a control electrode of the driving transistor T3 to initialize voltage of the control electrode of the driving transistor T3.
A control electrode of the second transistor T2 is connected with a first scan signal terminal S1, a first pole of the second transistor T2 is connected with the first node N1, and a second pole of the second transistor T2 is connected with a second pole of the driving transistor T3. When a conducting level scan signal is applied to the first scan signal line terminal S1, the second transistor T2 enables the control electrode of the driving transistor T3 be connected with the second electrode.
The control electrode of the driving transistor T3 is connected with the first node N1, that is, the control electrode of the driving transistor T3 is connected with a second polar plate of the storage capacitor C, the first pole of the driving transistor T3 is connected with the second node N2, and the second electrode of the driving transistor T3 is connected with the third node N3. The driving transistor T3 determines a driving current value flowing between a first power supply signal terminal VDD and a second power supply signal terminal VSS according to a potential difference between the control electrode and the first electrode of the driving transistor T3, so as to drive the light-emitting device to emit light.
A first pole of the fourth transistor T4 is connected with a data signal terminal DATA, a second pole of the fourth transistor T4 is connected with the second pole of the driving transistor T3, and a control electrode of the fourth transistor T4 is connected with a first scan signal terminal S1. When a conducting level scan signal is applied to the first scan signal terminal S1, the fourth transistor T4 is configured to input data voltage provided by the data signal terminal DATA to the pixel driving circuit.
A control electrode of the fifth transistor T5 is connected with a light-emitting signal control terminal EM, a first pole of the fifth transistor T5 is connected with the first power supply signal terminal VDD, and a second pole of the fifth transistor T5 is connected with the first pole of the driving transistor T3, that is, the second pole of the fifth transistor T5 is connected with the second node N2. A control electrode of the sixth transistor is connected with the light-emitting signal control terminal EM, a first pole of the sixth transistor is connected with the second pole of the driving transistor T3, a second electrode of the sixth transistor is connected with a first electrode of the light-emitting device, and the first pole of the sixth transistor T6 is connected with the third node N3. When a conducting level light-emitting signal is applied to the light-emitting signal terminal EM, the fifth transistor T5 and the sixth transistor T6 make the light-emitting device emit light by forming a driving current path between the first power supply signal terminal VDD and the second power supply signal terminal VSS.
A control electrode of the second reset transistor T7 is connected with a second reset signal terminal Re2, a first pole of the second reset transistor T7 is connected with a second initialization signal terminal INIT2, and a second pole of the second reset transistor T7 is connected with the first electrode of the light-emitting device. When a conducting level scan signal is applied to the second reset signal terminal Re2, the second reset transistor T7 transmits a second initialization signal to the first electrode of the light-emitting device, so as to initialize the amount of charge accumulated in the first electrode of the light-emitting device or release the amount of the charge accumulated in the first electrode of the light-emitting device.
The storage capacitor C has a first polar plate and a second polar plate, the first polar plate is connected with the first power supply signal terminal VDD, and the second polar plate is connected with the first node N1. That is, the second polar plate of the storage capacitor C is connected with the control electrode of the driving transistor T3.
In an exemplary implementation, the light-emitting device may be an OLED including a first electrode (anode), an organic light-emitting layer and a second electrode (cathode) which are stacked, or may be a QLED including the first electrode (anode), a quantum dot light-emitting layer and the second electrode (cathode) which are stacked.
In an exemplary implementation, a second electrode of the light-emitting device is connected with the second power supply signal terminal VSS, a signal of the second power supply signal terminal VSS is a low level signal, and a signal of the first power supply signal terminal VDD is a continuously-provided high level signal. For the mth display row, the second reset signal terminal Re2 is Re(m), the first reset signal terminal Re1 is Re(m−1), the first reset signal terminal Re1 of the current display row and the second reset signal terminal Re2 in the previously row of pixel driving circuit may be the same signal, which can reduce signal lines of the display panel and realize a narrow bezel of the display panel.
In an exemplary implementation, the seven transistors in the pixel circuit may be P-type transistors, or may be N-type transistors. Using the same type of transistors in the pixel driving circuit can simplify the process flow, reduce the process difficulty of the display panel, and improve the product yield. In some possible implementations, the first transistor T1 to the seventh transistor T7 may include the P-type transistors and the N-type transistors.
In an exemplary implementation, a transistor in a pixel circuit may employ a low temperature poly-silicon thin film transistor, or an oxide thin film transistor, or both the low temperature poly-silicon thin film transistor and the oxide thin film transistor. An active layer of the low temperature poly-silicon thin film transistor employs Low Temperature Poly-Silicon (LTPS), and an active layer of the oxide thin film transistor employs an oxide semiconductor (Oxide). The low temperature poly-silicon thin film transistor has the advantages of high mobility and fast charging, and the oxide thin film transistor has the advantages of low leakage current. The low temperature poly-silicon thin film transistor and the oxide thin film transistor are integrated on one display substrate to form a display substrate containing both the low temperature poly-silicon thin film transistor and the oxide transistor (Low Temperature Poly-Silicon+Oxide, LTPO), thus low frequency driving may be realized by utilizing the advantages of the low temperature poly-silicon thin film transistor and the oxide transistor, power consumption can be reduced, and the display quality can be improved.
In an exemplary implementation, taking an OLED as an example, the process of the pixel driving circuit may include the following stages.
A first stage t1 is called a reset stage. The first reset signal terminal Re1 outputs a low level signal to conduct the first reset transistor T1, and the first initialization signal terminal INIT1 inputs an initial signal to the first node N1, initializes the storage capacitor C. and clears original data voltage in the storage capacitor. The second reset signal terminal Re2, the first scan signal terminal S1 and the light-emitting signal control terminal EM output a high level signal, so that the second transistor T2, the fourth transistor T4, the fifth transistor T5, the sixth transistor T6 and the second reset transistor T7 are disconnected, and the OLED does not emit light at this stage.
The second stage t2 is called a data writing stage or a threshold compensation stage. The first scan signal terminal S1 outputs a low level signal, the fourth transistor T4, the second transistor T2, and the second reset transistor T7 are conducted, and at the same time, the data signal terminal DATA outputs a driving signal to write data voltage to the first node N1. At this time, the second transistor T2 is turned on, so that the driving transistor T3 is in a diode-connected state, and the data voltage is provided to the second node N2 through the first node N1, the conducted third transistor T3, the third node N3, and the conducted second transistor T2, and a difference between a data voltage output by the data signal terminal DATA and a threshold voltage of the driving transistor T3 is charged into the storage capacitor C, the voltage of the second polar plate (the second node N2) of the storage capacitor C is Vdata-|Vth|. Vdata is the data voltage output by the data signal line DATA, and Vth is the threshold voltage of the driving transistor T3.
The second reset transistor T7 is conducted, so that second initialization voltage of the second initialization signal terminal INIT2 is provided to the first electrode of the OLED, to initialize (reset) the first electrode of the OLED, clear the internal pre-stored voltage, and complete initialization, thereby ensuring that the OLED does not emit the light. The first reset signal line Re1 outputs a high level signal, so that the first transistor T1 is disconnected. The light-emitting control signal terminal EM outputs a high level signal, so that the fifth transistor T5 and the sixth transistor T6 are disconnected.
The third stage 13 is called a light-emitting stage. The light-emitting control signal terminal EM outputs a low level signal, and the first reset signal terminal Re1, the second reset signal terminal Re2 and the first scan signal terminal S1 output a high level signal. A signal of the light-emitting control signal terminal EM is the low level signal, so that the fifth transistor T5 and the sixth transistor T6 are conducted, and a first power supply voltage output by the first power supply signal terminal VDD provides a driving voltage to the first electrode of the OLED through the conducted fifth transistor T5, the driving transistor T3 and the sixth transistor T6 to drive the OLED to emit the light.
In the driving process of the pixel driving circuit, the driving current flowing through the driving transistor T3 is determined by a voltage difference between the control electrode and the first electrode of the driving transistor T3. Since a voltage of the second node N2 is Vdata−|Vth|, a driving current of the third transistor T3 is:
I=K*(Vgs−Vth)2=K*[(Vdd−Vdata+|Vth|)]2=K*[(Vdd−Vdata)]2.
I represents a driving current flowing through the driving transistor T3, that is, a driving current for driving the OLED. K represents a constant. Vgs represents a voltage difference between the control electrode and the first pole of the driving transistor T3. Vth represents a threshold value voltage of the driving transistor T3. Vdata is a data voltage output by the data signal terminal DATA, and Vdd is a first power supply voltage output by the first power supply signal terminal VDD. The pixel driving circuit can avoid the influence of a threshold value of the driving transistor on its output current.
The pixel driving circuit may respectively provide a first initialization signal to the first node N1 through the first initialization signal terminal INIT1, and provide a second initialization signal to the first electrode of the light-emitting device through the second initialization signal terminal INIT2.
Specifically, in an exemplary implementation, the present disclosure provides a display substrate, including: a base substrate; and a plurality of sub-pixels arranged in an array, wherein at least one sub-pixel includes a pixel driving circuit and a light-emitting device, the plurality of sub-pixels form an array of M rows*N columns, and M and N are positive integers greater than or equal to 1: the pixel driving circuit includes a plurality of transistors, and the plurality of transistors include driving transistors; and the light-emitting device includes a first electrode.
The base substrate further includes: a first initialization signal line and a second initialization signal line; and the first initialization signal line and the second initialization signal line extend in a first direction, and the first direction is an extension direction of sub-pixel rows.
The first initialization signal line is respectively electrically connected with the mth row of sub-pixels, and is configured to transmit a first initialization signal to a control electrode of a driving transistor of the mth row of sub-pixels; and the second initialization signal line is respectively electrically connected with the (m−1)th row of sub-pixels, and is configured to transmit a second initialization signal to a first electrode of a light-emitting device of the (m−1)th row of sub-pixels.
In a second direction, a projection of the first initialization signal line on the base substrate is located on one side of a projection of the second initialization signal line on the base substrate away from a projection of the (m−1)th row of sub-pixels on the base substrate, the second direction is an extension direction of sub-pixel columns, and m is a positive integer greater than or equal to 1 and less than or equal to M.
The first initialization signal is different from the second initialization signal.
Specifically, as shown in
As shown in
Continuing to refer to
Continuing to refer to
The first initialization signal Vinit1 and the second initialization signal Vinit2 may not be equal. Therefore, the pixel driving circuit may provide different initialization signals to the first node N1 and the first electrode of the light-emitting device according to actual requirements. For example, an effective level voltage of the first initialization signal may be set to be −3V. and an effective level voltage of the second initialization signal may be set to be −4V, which can ensure that a display screen has low brightness in a black state and improve a picture display effect. In another possible implementation, the first initialization signal line 31 and the second initialization signal line 32 are located between driving transistors of two adjacent rows of sub-pixels, and located on the same side of any row of driving transistors in the second direction. As shown in
In another possible implementation, a width of the first initialization signal line 31 in the second direction is different from a width of the second initialization signal line 32 in the second direction. It should be noted that the “width in the second direction” refers to a width of a main part of the first initialization signal line 31 or the second initialization signal line 32 extending in the first direction in the second direction. The second direction is an extension direction of the pixel column. A square resistance value of a signal line has a negative correlation with a width of the signal line, that is, the larger the width of the signal line is, the smaller the square resistance value is. Setting a width of one of the two signal lines to be wider can effectively reduce the overall square resistance of the two signal lines. At the same time, setting the width of one of the two signal lines to be wider also helps to reduce the resistance while making full use of the space of the display substrate to improve the display effect. Specifically, in one possible implementation, the width of the second initialization signal line 32 in the second direction may be greater than the width of the first initialization signal line 31 in the second direction. Further, in one possible implementation, the width of the second initialization signal line 32 is 1.3-2.4 times the width of the first initialization signal line 31.
In another possible implementation, continuing to refer to
In an exemplary implementation, continuing to refer to
In an exemplary implementation, as shown in
In another possible implementation, referring to
Arranging the third initialization signal line 41 in the layer different from the first initialization signal line 31 and the second initialization signal line 32 and electrically connecting the third initialization signal line 41 to one of the first initialization signal line 31 and the second initialization signal line 32, can make the initialization signal Vinit1 or Vinit2 transmitted in different directions in the different layers, which is helpful to reduce voltage drop of initialization signal transmission and improve the uniformity of a displayed picture. Specifically, the third initialization signal line 41 may be connected with the first initialization signal line 31 through a via hole.
Further, in another possible implementation, the third initialization signal line 41 and the first initialization signal line 31 are connected through the via hole to form a mesh distribution structure, as shown in
In another possible implementation, continuing to refer to
In another possible implementation, continuing to refer to
In one possible implementation, shapes of the two adjacent third initialization signal lines may be the same or different. “A and B have the same shape” mentioned in the present disclosure means that the shapes of A and B are approximately the same within a reasonable error range or process variation.
In one possible implementation, the plurality of transistors include a first reset transistor T1, a second transistor T2, a driving transistor T3, a fourth transistor T4, a fifth transistor T5, a sixth transistor T6, and a second reset transistor T7.
As shown in
The first active layer 11, the second active layer 12, and the fourth active layer 14 in the (m−1)th pixel row are located on one side of the third active layer 13 of the current pixel driving circuit away from the mth pixel row, the first active layer 11 is located on one side of the second active layer 12 and the fourth active layer 14 away from the third active layer 13, and the fifth active layer 15, the sixth active layer 16 and the seventh active layer 17 in the (m−1)th pixel row are located on one side of the third active layer 13 close to the mth pixel row:
Exemplarily, the first active layer 11 may be in an “n” shape, which is a double gate structure including two channel regions; the second active layer 12 may be in a “7” shape, which is a double gate structure including two channel regions; and the third active layer 13 may be in a “” shape or an “I” shape, and the shape of each active layer can be selected according to process requirements, which is not limited in the present disclosure.
As shown in
The reset signal line 21 that provides the first reset signal and the first scan signal line 22 that provides the first scan signal for the driving circuit of the (m−1)th row of sub-pixels are located on one side of the first polar plate 24 of the current pixel row away from the mth row of sub-pixels. The first scan signal line 22 is located on one side of the reset signal line 21 that provides the first reset signal to the current pixel row away from the first polar plate 24, and the light-emitting control signal line 23 may be located on one side of the first polar plate 24 of the current pixel row close to the mth row of sub-pixels.
Specifically, a preparation process of a base substrate may include: a semiconductor layer 1 is deposited on the base substrate, and the semiconductor layer 1 is patterned to form an active layer of each transistor; an insulating layer film is deposited on the semiconductor layer 1, then a first conductive layer 2 is deposited on the insulating layer film, the first conductive layer 2 is patterned to form a reset signal line 21, a first scan signal line 22, a light-emitting control signal line EM, and a first polar plate 24; and conductorization treatment is performed on the semiconductor layer 1, a region shielded by the first conductive layer 2 forms channel regions of T1 to T7, and an unshielded first conductive layer 1 is conductorized, that is, the source-drain regions of T1 to T7 are all conductorized.
As shown in
As shown in
Continuing to refer to
In some possible implementations, continuing to refer to
It should be noted that the above included angle of each extension portion refers to an included angle between line segments where the extension portion is located. Those skilled in the art can understand that in the actual process, an edge of each extension portion may not all be in regular straight lines as shown in
Referring to
Referring to
Continuing to refer to
Continuing to refer to
As shown in
In one possible implementation, referring to
The second power supply line 52 and the first power supply line 42 are electrically connected with the seventh extension portions 421 via an eighth connection portion 56, and specifically, may be connected through a via hole. That is, the second power supply line 52 and the first power supply line 51 are connected in parallel, which can significantly reduce the voltage drop of the Vdd signal in the transmission process and improve the display effect.
In one possible implementation, a projection of the second power supply line 52 on the base substrate and a projection of the first power supply line 42 on the base substrate at least partially overlap, and further, a width of the second power supply line 52 in the first direction is smaller than the width of the seventh extension portions 421 in the first direction.
The seventh connection portion 55 is connected with the fourth connection portion 46 and the fifth connection portion 47 through via holes, the fourth connection portion 46 and the fifth connection portion 47 are connected with a second region of the sixth transistor T6 through via holes, and the shapes of the fourth connection portion 46 and the fifth connection portion 47 may be different. For example, as shown in
Continuing to refer to
Referring to
Continuing to refer to
Referring to
In one possible implementation, referring to
Continuing to refer to
In one possible implementation, the third initialization signal line 41 is only disposed in the red-blue pixel columns RB. In another possible implementation, the third initialization signal line 41 is only disposed in the green-green pixel columns GG. In another possible implementation, the third initialization signal line 41 may be simultaneously disposed in the red-blue pixel columns RB and the green pixel columns GG.
In one possible implementation, a shape of the third initialization signal line 31 located in the nth column of red-blue pixel columns RB may be the same as a shape of the third initialization signal line 31 located in the (n+1)th column, where n is a positive integer greater than or equal to 1 and less than or equal to N.
In one possible implementation, the display substrate further includes a fifth conductive layer 6, as shown in
As shown in
The first electrode 61 includes a main body part 61a and an auxiliary part 61b. The auxiliary part 61b is electrically connected with the third conductive layer 4 through the first via hole 711. In the embodiment of the present disclosure, the main body part 61a and the auxiliary part 61b in the same sub-pixel are of an integral structure, and may be formed simultaneously by employing one composition process.
As shown in
In one possible implementation, the flat portion 53 is located on one side of the first electrode 61 close to the base substrate. As shown in
In the present disclosure. “A and B have substantially the same shape” means that contour lines of A and B have the same shape, and an area difference between A and B does not exceed ±1%.
In other words, the shape of all the flat portions corresponds to the shape of all the first electrodes above the flat portions, which helps to achieve uniform flatness of each part of each first electrode, and eliminates asymmetry, thereby improving or even eliminating the color shift.
In one possible implementation, the area of the main body parts of the first electrodes of the sub-pixels with different colors may be different. For example, the area of the main body part 611a of the first electrode of the first color sub-pixel may be greater than the area of the main body part 612a of the first electrode of the second color sub-pixel and the area of the third color sub-pixel 613a. Of course, the area of each color main body part may also be the same, or set according to the required size, which is not limited in the present disclosure.
As shown in
In one possible implementation, the projection of the flat portion 53 of each sub-pixel on the base substrate at least partially overlaps with the projection of the first electrode 61 of the corresponding sub-pixel on the base substrate. Specifically, the projection of the first color flat portion 531 on the base substrate at least partially overlaps with the projection of the first electrode 611 of the first color sub-pixel on the base substrate, the projection of the second color flat portion 532 on the base substrate at least partially overlaps with the projection of the first electrode 612 of the second color sub-pixel on the base substrate, and the projection of the third color flat portion 533 on the base substrate at least partially overlaps with the projection of the first electrode 613 of the third color sub-pixel on the base substrate. That is, the side of the first electrode of each different color sub-pixel close to the base substrate has the flat portion, so that the first electrode of each sub-pixel can be flat, the color shift is reduced, and the uniformity of the displayed picture is improved.
Further, in one possible implementation, the projection of the first electrode 611 of the first color sub-pixel on the base substrate completely covers the projection of the first color flat portion 531 on the base substrate, the projection of the first electrode 612 of the second color sub-pixel on the base substrate completely covers the projection of the second color flat portion 532 on the base substrate, and the projection of the first electrode 613 of the third color sub-pixel on the base substrate completely covers the projection of the third color flat portion 533 on the base substrate. Usually, thicknesses of the signal lines made by the third conductive layer 4 and the fourth conductive layer 5 located on one side of the first electrode close to the display substrate.
such as the first power supply line 42 and the second power supply line 52, are large in a direction perpendicular to the base substrate. The insulating layer above the signal lines cannot be completely flattened, so that the light-emitting layer above the flat layer is uneven, and the first electrode 61 and the light-emitting layer above the first electrode 61 appear asymmetrical protrusions, which in turn leads to color shift occurring when viewed from the left and right sides of a normal line of the display substrate at the same angle as the display substrate. The flat portions are disposed under the first electrodes of the different sub-pixels, and the flat portions are completely located inside the projections of the first electrodes, so that the corresponding positions of the first electrodes of each sub-pixel can be flattened, thereby further improving the color shift.
In one possible implementation, the projection of the flat portion 53 on the base substrate and the projection of the first power supply line 41 on the base substrate have an overlapped part. Specifically, in the embodiment shown in the present disclosure, the projection of the flat portion 53 on the base substrate at least partially overlaps with the seventh extension portion 421 of the first power supply line 42. Such disposing reduces the voltage drop of transmission of the first power supply voltage on the signal line, and improves the uniformity of the displayed picture.
Referring to
Continuing to refer to
Continuing to refer to
Continuing to refer to
In one possible implementation, the display substrate may further include: a light-shading layer (not shown in the figure). The light-shading layer may be located between the base substrate and the semiconductor layer 1, and a projection of the light-shading layer on the base substrate at least covers a projection of an active region of one transistor in the plurality of transistors on the base substrate. For example, the projection of the light-shading layer on the base substrate can cover the projection of the channel region of the driving transistor T3 on the base substrate to shield external light and external interference, thereby avoid affecting the performance of the active layer of each transistor, and improving the display effect.
Further, in one possible implementation, the light-shading layer may be a semiconductor material (a-Si) or a metal material (Mo). The light-shading layer may be electrically connected with a constant potential to prevent the light-shading layer from being in a floating state, and have a better anti-interference effect on the channel region of the active layer. Specifically, the light-shading layer may be electrically connected with the first power supply line 41, and may also be electrically connected with the first initialization signal line 31 or the second initialization signal line 32.
In another possible implementation, the light-shading layer may only include a first connection structure extending in the first direction, or may only include a second connection structure extending in the second direction, or may simultaneously include the first connection structure extending in the first direction and the second connection structure extending in the second direction.
The first connection structure and the second connection structure may each be connected in a mesh with the structure to which they are electrically connected, so as to significantly reduce loading. For example, the first connection structure may be electrically connected with the first power supply line 42 and be of a mesh structure. For another example, the first connection structure may be electrically connected with the third initialization signal line 41 and be of a mesh structure. For another example, the second connection structure may be electrically connected with the first initialization signal line 31 or the second initialization signal line 32 and be of a mesh structure. For another example, the second connection structure may be connected in parallel with the third initialization signal line 41, and the second connection structure may be located only in the red-blue pixel columns, only in the green-green pixel columns, or in both the red-blue pixel columns and the green-green pixel columns. For another example, the first connection structure and the second connection structure may be connected in a mesh shape, that is, the light-shading layer itself may be in a mesh shape.
As shown in
In another possible implementation, as shown in
In another possible implementation, as shown in
In one possible implementation, the first initialization signal line bus 31′, the second initialization signal line bus 32′, and the third initialization signal line bus 41′ may be located in the same film layer, for example, may be all located in the third conductive layer 4 or all located in the fourth conductive layer 5. Of course, they may also be located in the different film layers. For example, the first initialization signal line bus 31′ may be located in the third conductive layer 4, and the second initialization signal line bus 32′ and the third initialization signal line bus 41′ may be located in the fourth conductive layer 5, which may be designed according to specific needs, and is not limited in the present disclosure.
The present disclosure further provides a display apparatus, including the above display panel. The display apparatus may be a display apparatus such as a mobile phone and a tablet computer.
The present disclosure further provides a method for manufacturing a display substrate, at least including S1 to S7.
S1: a semiconductor layer 1 is deposited on a base substrate, and the semiconductor layer 1 is patterned to form an active layer of each transistor; and a first active layer 11 to a seventh active layer 17 are of an interconnected integral structure.
S2: a second insulating layer 72 is deposited on the semiconductor layer 1, then a first conductive layer 2 is deposited on the second insulating layer 72, the first conductive layer 2 is patterned to form a reset signal line 21, a first scan signal line 22, a light-emitting control signal line EM, and a first polar plate 24. As shown in
S3: conductorization treatment such as ion implantation is performed on the semiconductor layer 1, a region shielded by the first conductive layer 2 forms channel regions of a first reset transistor T1, a second transistor T2, a driving transistor T3, a fourth transistor T4, a fifth transistor T5, a sixth transistor T6 and a second reset transistor T7, the semiconductor layer 1 that is not shielded is conductorized, that is, source-drain regions of the seven transistors T1 to T7 are all conductorized.
S4: a third insulating layer 73 is deposited on the first conductive layer 2, a second conductive layer 3 is deposited over the insulating layer and patterned, the second conductive layer 3 includes a first initialization signal line 31, a second initialization signal line 32, a shielding portion 33, and a first conductive portion 34, and the second conductive layer may also be a second gate metal layer (Gate2 layer).
S5: a third insulating layer 74 is deposited on the second conductive layer 3, a third conductive layer 4 is deposited over the third insulating layer and patterned, and the third conductive layer at least includes a third initialization signal line 41, a first power supply line 42, a first connection portion 43, a second connection portion 44, a third connection portion 45, a fourth connection portion 46 and a fifth connection portion 47.
S6: a first insulating layer 71 is deposited over the third conductive layer 4, a fourth conductive layer 5 is deposited on the first insulating layer 71 and patterned, the fourth conductive layer 5 at least includes a data signal line 51, a second power supply line 52, and a flat portion 53.
S7: a fourth insulating layer 75 is deposited on the fourth conductive layer 5, a fifth conductive layer 6 is deposited over the fourth insulating layer 75 and patterned to form a first electrode pattern of a sub-pixel.
The subsequent preparation flow may include: an organic light-emitting layer is formed by employing an inkjet printing or evaporation process, the organic light-emitting layer is connected with the first electrode through an opening of a pixel defining layer, a second electrode is formed on the organic light-emitting layer, and the second electrode is connected with the organic light-emitting layer. An encapsulation layer is formed. The encapsulation layer may include a first encapsulation layer, a second encapsulation layer and a third encapsulation layer which are stacked. The first encapsulation layer and the third encapsulation layer may adopt an inorganic material, and the second encapsulation layer may adopt an organic material. The second encapsulation layer is disposed between the first encapsulation layer and the third encapsulation layer to be capable of preventing outside water vapor from invading a light-emitting structure.
In an exemplary implementation, the base substrate may be a flexible substrate, or may be a rigid substrate. The rigid substrate may be, but not limited to, one or more of glass and quartz, and the flexible substrate may be, but not limited to, one or more of polyethylene terephthalate. BHET, polyetheretherketone, polystyrene, polycarbonate, polyarylate, polyarylester, polyimide, polyvinyl chloride, polyethylene, and textile fibers. In an exemplary implementation, the flexible substrate may include a first flexible material layer, a first inorganic material layer, a semiconductor layer, a second flexible material layer and a second inorganic material layer which are stacked. Materials of the first flexible material layer and the second flexible material layer may adopt polyimide (PI), polyethylene terephthalate (PET) or surface-treated soft polymer film and other materials, materials of the first inorganic material layer and the second inorganic material layer may adopt silicon nitride (SiNx) or silicon oxide (SiOx) and the like, which are configured to improve water and oxygen resistance of the substrate, and the material of the semiconductor layer may adopt amorphous silicon (a-si).
In an exemplary embodiment, the first conductive layer, the second conductive layer, the third conductive layer, and the fourth conductive layer may adopt any one or more of metal materials, such as silver (Ag), copper (Cu), aluminum (Al), and molybdenum (Mo), or alloy materials of the above metal, such as an aluminum-neodymium alloy (AlNd) or a molybdenum-niobium alloy (MoNb), may be a single-layer structure, or a multi-layer composite structure, such as Mo/Cu/Mo. The first insulating layer, the second insulating layer, the third insulating layer and the fourth insulating layer may adopt any one or more of silicon oxide (SiOx), silicon nitride (SiNx) and silicon oxynitride (SiON), and may be a single layer, multiple layers or a composite layer. The first insulating layer is called a buffer layer, which is configured to improve the water and oxygen resistance of the substrate, the second insulating layer and the third insulating layer are called a gate insulating (GI) layer, and the fourth insulating layer is called an interlayer insulation (ILD) layer. The active layer may adopt an amorphous indium gallium zinc oxide (a-IGZO) material, zinc oxynitride (ZnON), indium zinc tin oxide (IZTO), amorphous silicon (a-Si), polycrystalline silicon (p-Si), sexithiophene or polythiophene and other materials, that is, the present disclosure is applicable to transistors manufactured based on an oxide technology, a silicon technology or an organic matter technology. The first insulating layer and the fourth insulating layer may adopt an organic material, such as resin. The fifth conductive layer may adopt a single-layer structure, such as indium tin oxide ITO or indium zinc oxide IZO, or may adopt a multi-layer composite structure, such as ITO/Ag/ITO. The pixel defining layer may adopt polyimide, acrylic or polyethylene terephthalate. The cathode may adopt any one or more of magnesium (Mg), silver (Ag), aluminum (Al), copper (Cu) and lithium (Li), or adopt an alloy manufactured by any one or more of the above metal.
Those skilled in the art will easily figure out other embodiments of the present disclosure after considering the specification and practicing the content disclosed here. The present application intends to cover any transformation, usage or adaptive change of the present disclosure, and these transformations, usages or adaptive changes conform to a general principle of the present disclosure and include common general knowledge or conventional technical means in the technical field not disclosed by the present disclosure. The specification and the embodiments are merely regarded as being for example, and the true scope and spirit of the present disclosure are indicated by claims.
It will be appreciated that the present disclosure is not limited to the exact structure that has been described above and shown in the accompanying drawings, and that various modifications and changes may be made without departing from the scope of the present disclosure. The scope of the present disclosure should still be defined by the appended claims.
The present disclosure is a US National Stage of International Application No. PCT/CN2021/116217, filed on Sep. 2, 2021, the entire contents of which are incorporated herein by reference.
Filing Document | Filing Date | Country | Kind |
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PCT/CN2021/116217 | 9/2/2021 | WO |