The present application claims the priority of Chinese patent application No. 202111220749.3, filed on Oct. 20, 2021, and the entire disclosure of which is incorporated herein by reference as part of the disclosure of this application.
Embodiments of the present disclosure relate to a display substrate and a display device.
An organic light emitting diode (OLED) display has many advantages such as active light emission, high contrast, rapid response, and being light and thin, and thus has become one of major new generation displays. With the rapid development of high-resolution products, higher requirements have been put forward on a structural design, such as arrangements of pixels and signals, of a display substrate of a display.
At least an embodiment of the present disclosure provides a display substrate, comprising a base substrate, and a first insulating layer, a first conductive layer, a second insulating layer, and a second conductive layer which are disposed on the base substrate in sequence. The first insulating layer comprises a first depression structure; the first conductive layer comprises a first conductive structure comprising a bottom surface close to the base substrate, a top surface away from the base substrate, and a first side surface between the bottom surface and the top surface; the second insulating layer comprises a first via hole, and the second conductive layer comprises a second conductive structure; an orthographic projection of the first via hole on the base substrate is at least partially overlapped with an orthographic projection of the first depression structure on the base substrate; the first via hole exposes at least a portion of the first side surface of the first conductive structure, and the second conductive structure is in contact with the at least portion of the first side surface of the first conductive structure; the first side surface of the first conductive structure comprises a protruding curved surface, and the second conductive structure covers at least a portion of the protruding curved surface; the first conductive structure comprises a connection portion located in the first depression structure and connected to the protruding curved surface; and in a direction parallel to a surface of the base substrate, the protruding curved surface protrudes towards a middle of the first depression structure relative to the connection portion.
In some examples, the second conductive structure comprises a first protrusion, and an orthographic projection of the first protrusion on the base substrate is located within the orthographic projection of the first depression structure on the base substrate; and the first protrusion is in contact with at least a portion of the first side surface of the first conductive structure.
In some examples, the orthographic projection of the first depression structure on the base substrate is at least partially overlapped with the orthographic projection of the first via hole on the base substrate.
In some examples, the first conductive structure further comprises a second side surface located between the bottom surface and the top surface, and the first side surface is opposite to the second side surface; and a size of the first side surface in a direction perpendicular to the base substrate is greater than a size of the second side surface in the direction perpendicular to the base substrate.
In some examples, the first side surface comprises a first side surface portion on a side, away from the base substrate, of the first insulating layer; and a size of a portion, not covered by the second conductive structure, of the first side surface portion in the direction perpendicular to the base substrate is greater than the size of the second side surface in the direction perpendicular to the base substrate.
In some examples, at least a portion, which is directly connected to the first side surface, of the top surface of the first conductive structure is separated from the second conductive layer.
In some examples, the display substrate has a first cross section, and a size of the first depression structure within the first cross section in a reference direction parallel to a surface of the base substrate is denoted as b; within the first cross section, a size of an overlapping region of the first via hole and the first depression structure in the reference direction is denoted as c, and a size of a portion, covered by the second conductive structure, of the first side surface of the first conductive structure in the direction perpendicular to the base substrate is denoted as d; the first conductive structure comprises a contact portion located on the side, away from the base substrate, of the first insulating layer and in contact with the second conductive structure, and a size of the contact portion in the direction perpendicular to the base substrate is denoted as e; c/b is greater than 0.1; and We is greater than 0.3.
In some examples, c/b is greater than 0.15, and d/e is less than 0.8.
In some examples, c/b is less than 0.19, and d/e is less than 0.5.
In some examples, within the first cross section, a maximum depth of the first depression structure is denoted as i; an included angle formed by a side edge of the first depression structure within the first cross section and the surface of the base substrate is denoted as j; a thickness of a portion, in contact with the first conductive structure, of the second conductive structure in the direction perpendicular to the base substrate is denoted as k; and d/e<0.0273*i*sin(j)/k.
In some examples, c/b<0.0102*i*sin(j)/k.
In some examples, the size of the first side surface in the direction perpendicular to the base substrate is denoted as n, and the size of the second side surface in the direction perpendicular to the base substrate is denoted as e; and 0.1*(n/e)/sin(j)>(d/n).
In some examples, 0.08*(n/e)/sin(j)>d/n.
In some examples, the contact portion comprises a second protrusion facing the first depression structure, and an orthographic projection of the second protrusion on the base substrate is located within the orthographic projection of the first depression structure on the base substrate; and within the first cross section, a size of the second protrusion in the direction perpendicular to the base substrate is greater than a size of a portion, located on a side surface of the first depression structure, of the first conductive layer in a direction perpendicular to the side surface of the first depression structure.
In some examples, the first insulating layer further comprises a second depression structure spaced apart from the first depression structure; the first conductive structure further comprises a second side surface located between the bottom surface and the top surface, and the first side surface is opposite to the second side surface; an orthographic projection of the second side surface on the base substrate is at least partially overlapped with an orthographic projection of the second depression structure on the base substrate; the first via hole further exposes at least a portion of the second side surface, and the second conductive structure covers the at least portion of the second side surface of the first conductive structure.
In some examples, in a direction perpendicular to the base substrate, a size of the portion, covered by the second conductive structure, of the first side surface of the first conductive structure is different from a size of a portion of the second side surface that is covered by the second conductive structure.
In some examples, an overlapping size of the orthographic projection of the first via hole on the base substrate and the orthographic projection of the first depression structure on the base substrate is different from an overlapping size of the orthographic projection of the first via hole on the base substrate and the orthographic projection of the second depression structure on the base substrate.
At least an embodiment of the present disclosure further discloses a display substrate, comprising a base substrate; and a first insulating layer, a first conductive layer, a second insulating layer, and a second conductive layer which are disposed on the base substrate in sequence. The first insulating layer comprises a first conductive structure; the second conductive layer comprises a second conductive structure; the first conductive structure comprises a bottom surface close to the base substrate, a top surface away from the base substrate, and a first side surface located between the bottom surface and the top surface; the second insulating layer comprises a first via hole, and the second conductive layer is in contact with the first conductive structure through the first via hole; the second conductive structure comprises a first protrusion; the first via hole exposes at least a portion of the first side surface of the first conductive structure, and the first protrusion is in contact with the at least portion of the first side surface of the first conductive structure; the first insulating layer comprises a first depression structure and a second depression structure spaced apart from each other; the first conductive structure further comprises a second side surface located between the bottom surface and the top surface, and the first side surface is opposite to the second side surface; and at least a portion of the first conductive structure is respecitviely located in the first depression structure and the second depression structure.
In some examples, the first conductive structure comprises a second protrusion facing the first depression structure, and an orthographic projection of the second protrusion on the base substrate is located within an orthographic projection of the first depression structure on the base substrate.
In some examples, the display substrate further comprises a plurality of sub-pixels located on the base substrate, wherein the plurality of sub-pixels are arranged in a plurality of pixel rows along a first direction and a plurality of pixel columns along a second direction, and the first direction is different from the second direction; the first conductive layer further comprises a first signal line and a second signal line which are spaced apart from the first conductive structure, and the first signal line and the second signal line are extended in the second direction; a distance of an orthographic projection of the first protrusion on the base substrate to an orthographic projection of the first signal line on the base substrate in the first direction is denoted as 1, and a distance of an orthographic projection of the second signal line on the base substrate to the orthographic projection of the first signal line on the base substrate in the first direction is denoted as m; the display substrate comprising a first cross section perpendicular to the base substrate; within the first cross section, a size of a portion of the first conductive structure which is located on a side, away from the base substrate, of the first insulating layer in a direction perpendicular to the base substrate is denoted as e, and a size of a portion, covered by the first protrusion, of the first side surface in the direction perpendicular to the base substrate is denoted as d; and l/m>0.9(d/e).
In some examples, l/m>1.2*(d/e).
In some examples, the display substrate further comprises a plurality of sub-pixels located on the base substrate, wherein the plurality of sub-pixels are arranged in a plurality of pixel rows along a first direction and a plurality of pixel columns along a second direction, and the first direction is different from the second direction; the second insulating layer comprises a plurality of via holes that are arranged in a plurality of via hole rows and a plurality of via hole columns in the first direction and the second direction, and the plurality of via holes comprise multiple first via holes; the plurality of via hole rows comprise a first via hole row, and in the first via hole row, three continuous first via holes are present at an interval of one via hole.
In some examples, the plurality of via hole columns comprise a first via hole column, and in the first via hole column, each via hole is the first via hole, or one first via hole is present at an interval of one via hole.
In some examples, the plurality of pixel columns comprise a first pixel column and a second pixel column which are adjacent in the first direction; the first signal line is connected to sub-pixels in the first pixel column to provide a first signal, and the second signal line is connected to sub-pixels in the second pixel column to provide a second signal; and orthographic projections of electrodes, on a side close to the base substrate, of light emitting elements of the first pixel column on the base substrate are at least partially overlapped with an orthographic projection of the first signal line on the base substrate and an orthographic projection of the second signal line on the base substrate, respectively.
In some examples, the display substrate further comprises a pixel defining layer located on a side, away from the base substrate, of a pixel electrode; the pixel defining layer comprises a plurality of pixel opening regions that correspond to the plurality of sub-pixels one to one; and orthographic projections of the plurality of pixel opening regions on the base substrate are separated from an orthographic projection of the first protrusion on the base substrate.
In some examples, the pixel defining layer comprises a plurality of protrusion portions which are located among the plurality of pixel opening regions; the plurality of protrusion portions comprise a first protrusion portion, a second protrusion portion, and a third protrusion portion which are surrounding a same pixel opening region; and connecting lines of centers of orthographic projections of the first protrusion portion, the second protrusion portion, and the third protrusion portion on the base substrate form a triangle.
In some examples, the first protrusion portion is located among four adjacent pixel opening regions, and the second protrusion portion and the third protrusion portion are each located between two adjacent pixel opening regions; and an area of the orthographic projection of the first protrusion portion on the base substrate is greater than an area of the orthographic projection of the second protrusion portion on the base substrate and greater than an area of the orthographic projection of the third protrusion portion on the base substrate.
In some examples, the display substrate further comprises a third conductive layer on a side, close to the base substrate, of the first conductive layer; wherein the display substrate further comprises a plurality of sub-pixels on the base substrate; the plurality of sub-pixels are arranged in a plurality of pixel rows in a first direction and a plurality of pixel columns in a second direction, and the first direction is different from the second direction; the third conductive layer comprises a shielding electrode and a first capacitor electrode; and the shielding electrode comprises a portion extended in the first direction, and a portion extended towards the first capacitor electrode of the sub-pixel where the shielding electrode is located.
In some examples, the display substrate further comprises a third conductive layer on the side, close to the base substrate, of the first conductive layer; the display substrate further comprises a plurality of sub-pixels located on the base substrate; the plurality of sub-pixels are arranged in a plurality of pixel rows in a first direction and a plurality of pixel columns in a second direction, and the first direction is different from the second direction; the first conductive layer comprises a first reset voltage line extended in the second direction, and the third conductive layer comprises a second reset voltage line extended in the first direction, and the first reset voltage line is electrically connected to the second reset voltage line; the display substrate further comprises a semiconductor layer on a sided, close to the base substrate, of the third conductive layer; the semiconductor layer comprises a connection portion which electrically connects the first reset voltage line to a first electrode of a reset transistor in a sub-pixel; and an orthographic projection of the connection portion on the base substrate is overlapped with an orthographic projection of the first reset voltage line on the base substrate and is overlapped with an orthographic projection of the first electrode of the reset transistor on the base substrate.
In some examples, the display substrate further comprises a plurality of sub-pixels located on the base substrate, wherein the plurality of sub-pixels are arranged in a plurality of pixel rows in a first direction and a plurality of pixel columns in a second direction, and the first direction is different from the second direction; the display substrate further comprises a first gate reset voltage line and a first pixel electrode reset voltage line which are extended in the second direction, and a second gate reset voltage line and a second pixel electrode reset voltage line which are extended in the second direction, the first gate reset voltage line is electrically connected to the second gate reset voltage line through a second via hole, and the first pixel electrode reset voltage line is electrically connected to the second pixel electrode reset voltage line through a third via hole; the first gate reset voltage line and the second gate reset voltage line are configured to provide a reset voltage signal for a gate electrode of a driving transistor, and the first pixel electrode reset voltage line and the second pixel electrode reset voltage line are configured to provide a reset voltage signal for a pixel electrode.
In some examples, the second pixel electrode reset voltage line is electrically connected to a first electrode of a pixel electrode reset transistor through a fourth via hole, and orthographic projections of the fourth via hole and the third via hole on the base substrate are separated from each other.
In some examples, the second gate reset voltage line is electrically connected to a first electrode of a gate electrode reset transistor through a fifth via hole, and orthographic projections of the fifth via hole and the second via hole on the base substrate are separated from each other.
In some examples, the display substrate further comprises a plurality of sub-pixels located on the base substrate, wherein the plurality of sub-pixels are arranged in a plurality of pixel rows along a first direction and a plurality of pixel columns along a second direction, and the first direction is different from the second direction; each of the plurality of sub-pixels comprises a first capacitor electrode; the display substrate further comprises a plurality of data lines extended in the second direction; first capacitor electrodes of two sub-pixels adjacent in the first direction are connected by a connection portion, and the plurality of data lines are respectively overlapped with a plurality of connection portions in a direction perpendicular to the base substrate; the connection portion comprises a first portion overlapping a corresponding data line and a second portion not overlapping the corresponding data line; a size of the first portion in the second direction is greater than a size of the second portion in the second direction; the display substrate further comprises a reset voltage line extended along the second direction; and the second portion is overlapped with the reset voltage line in the direction perpendicular to the base substrate.
At least an embodiment of the present disclosure further provides a display substrate, comprising a base substrate, and a first metal layer, a second metal layer, a first conductive layer, and a second conductive layer which are disposed on the base substrate in sequence. The display substrate further comprises a first sub-pixel and a second sub-pixel which are on the base substrate and adjacent in a first direction; the first sub-pixel comprises a first pixel circuit, and the second sub-pixel comprises a second pixel circuit; the first pixel circuit and the second pixel circuit each comprise a capacitor which comprises a first capacitor electrode in the second metal layer and a second capacitor electrode in the first metal layer; the first capacitor electrode of the first pixel circuit and the first capacitor electrode of the second pixel circuit are connected to each other into an integrated capacitor electrode block; the capacitor electrode block has a first opening and a second opening; an orthographic projection of the first opening on the base substrate is overlapped with an orthographic projection of the second capacitor electrode of the first pixel circuit on the base substrate, and an orthographic projection of the second opening on the base substrate is overlapped with an orthographic projection of the second capacitor electrode of the second pixel circuit on the base substrate; and an area of the orthographic projection of the first opening on the base substrate is different from an area of the orthographic projection of the second opening on the base substrate.
In some examples, the second conductive layer comprises a reset voltage line, a first data line, a second data line, a first power line, and a second power line which are extended along a second direction, and the first direction is different from the second direction; each of the first pixel circuit and the second pixel circuit comprises a driving transistor and a data writing transistor; the reset voltage line is configured to provide a reset voltage for pixel electrodes or gate electrodes of the driving transistors of the first pixel circuit and the second pixel circuit; the first data line and the second data line are configured to provide data voltages for the data writing transistors of the first pixel circuit and the second pixel circuit, respectively; the first power line is configured to provide a power voltage for the driving transistor of the first pixel circuit, and the second power line is configured to provide a power voltage for the driving transistor of the second pixel circuit; the reset voltage line is between the first data line and the second data line; the first data line and the second data line are both between the first power line and the second power line; and the first power line and the second power line each have a closed hollowed-out region.
In some examples, an orthographic projection of a pixel electrode of the first sub-pixel on the base substrate is overlapped with an orthographic projection of each of the reset voltage line, the first data line, the second data line, the first power line, and the second power line on the base substrate.
In some examples, the display substrate further comprises a plurality of sub-pixels located on the base substrate and arranged in a plurality of pixel rows and a plurality of pixel columns in the first direction and in a second direction, wherein the first direction is different from the second direction; the first conductive layer further comprises a plurality of connection electrodes which are connected to the plurality of sub-pixels in one-to-one correspondence to provide a power voltage; the plurality of sub-pixels comprise a first sub-pixel; the display substrate further comprises a reset voltage line extended in the second direction, and the reset voltage line is connected to the first sub-pixel to provide a reset voltage; and an orthographic projection of a first protrusion on the base substrate is between an orthographic projection of the connection electrode correspondingly connected to the first sub-pixel on the base substrate and an orthographic projection of the reset voltage line on the base substrate.
In some examples, along the first direction, a distance of the first protrusion to the reset voltage line is smaller than a distance of the first protrusion to the connection electrode.
In some examples, the connection electrode comprises a main body portion and an extension portion extended in the first direction, and a size of the extension portion in the second direction is smaller than a size of the main body portion in the second direction; and in the second direction, the first conductive structure is at least partially overlapped with the extension portion of the connection electrode.
In some examples, the second conductive layer comprises a plurality of power electrodes that are connected to the plurality of connection electrodes in one-to-one correspondence to provide the power voltage; and the power electrodes corresponding to each of the plurality of pixel columns are connected to one another into an integrated structure, so as to form a plurality of power lines extended in the second direction.
In some examples, the second conductive layer further comprises a plurality of data lines extended in the second direction, wherein the plurality of data lines are connected to the plurality of pixel columns in one-to-one correspondence to provide data signals; the plurality of data lines are divided into a plurality of groups of data lines, and each data line group comprises two data lines; between every two adjacent pixel columns is provided with one data line group, and adjacent groups of data lines are spaced apart by two power lines.
In some examples, the display substrate comprises a plurality of reset voltage lines extended in the second direction, and the plurality of reset voltage lines comprise a first reset voltage line and a second reset voltage line disposed alternately in the first direction; the first reset voltage line and the second reset voltage line are configured to provide a first reset voltage and a second reset voltage, respectively; and adjacent first reset voltage and second reset voltage are spaced apart by two pixel columns.
In some examples, the plurality of reset voltage lines are in the first conductive layer; one first reset voltage line or one second reset voltage line is provided between the two power lines between the adjacent groups of data lines; and an orthographic projection of any one of the plurality of reset voltage lines on the base substrate is separated from an orthographic projection of any one of the plurality of power lines on the base substrate.
In some examples, the plurality of reset voltage lines are in the second conductive layer and are in one-to-one correspondence with the plurality of groups of data lines; and each of the plurality of reset voltage lines is between two data lines of a data line group corresponding to the each reset voltage line.
In some examples, the two power lines between adjacent groups of data lines are connected to each other into an integrated structure such that two power electrodes adjacent in the first direction in the two power lines are connected to each other into an integrated power electrode set; the display substrate comprises a plurality of second conductive structures disposed in one-to-one correspondence with the plurality of power electrodes; and the power electrode set comprises a hollowed-out region provided with two second conductive structures.
In some examples, the second conductive layer further comprises a connection line extended in the second direction to divide the hollowed-out region into two hollowed-out sub-regions; and the two second conductive structures are disposed within the two hollowed-out sub-regions and located on two sides of the connection line, respectively.
In some examples, the display substrate further comprises a third conductive layer located on a side, close to the base substrate, of the first conductive layer, and a semiconductor layer located between the third conductive layer and the second metal layer; the second metal layer is on a side, close to the base substrate, of the third conductive layer; the sub-pixel comprises a reset transistor configured to reset a first electrode of a light emitting element and comprising an active layer located in the semiconductor layer; the display substrate comprises a first reset control line in the second metal layer and a second reset control line in the third conductive layer; the first reset control line and the second reset control line are each configured to control a gate voltage of the reset transistor, and orthographic projections of the first reset control line and the second reset control line on the base substrate are at least partially overlapped with each other.
At least an embodiment of the present disclosure further provides a display substrate, comprising a base substrate, and a plurality of sub-pixels located on the base substrate. Each of the plurality of sub-pixels comprises a pixel circuit configured to drive a light emitting element to emit light; a plurality of pixel circuits of the plurality of sub-pixels are arranged in a plurality of pixel rows extended along a first direction and a plurality of pixel columns extended along a second direction, and the first direction is different from the second direction; the pixel circuit comprises a driving transistor and a storage capacitor, and the driving transistor is configured to be connected to the light emitting element and to control a driving current flowing through the light emitting element; the storage capacitor comprises a first capacitor electrode configured to receive a first power voltage, and a second capacitor electrode; the plurality of sub-pixels comprise a first sub-pixel; the first sub-pixel further comprises a shielding electrode which is in a same layer and of an integrated structure with the first capacitor electrode of the first sub-pixel; the shielding electrode comprises a first shielding portion and a second shielding portion, the second shielding portion is extended from the first capacitor electrode in the second direction, and the first shielding portion is extended from the second shielding portion in the first direction; the display substrate further comprises a semiconductor pattern in a same semiconductor layer with an active layer of the driving transistor; and in a direction perpendicular to the base substrate, the first shielding portion is at least partially overlapped with the semiconductor pattern.
In some examples, the pixel circuit further comprises another transistor comprising a gate electrode, a first electrode, and a second electrode, and the first electrode and the second electrode of the another transistor are respectively connected to a second electrode and a gate electrode of the driving transistor; and the semiconductor pattern is configured as at least a portion of an active layer of the another transistor.
In some examples, the another transistor comprises a first gate electrode and a second gate electrode; the active layer of the another transistor comprises a first portion, a second portion, and a third portion; an orthographic projection of the first portion on the base substrate is overlapped with an orthographic projection of the first gate electrode on the base substrate; an orthographic projection of the second portion on the base substrate is overlapped with an orthographic projection of the second gate electrode on the base substrate; the third portion is located between the first portion and the second portion and connects the first portion to the second portion; and the semiconductor pattern is configured as the third portion of the active layer of the another transistor.
In some examples, the first shielding portion comprises a first sub-portion and a second sub-portion; an orthographic projection of the first sub-portion on the base substrate is overlapped with an orthographic projection of the semiconductor pattern on the base substrate, and an orthographic projection of the second sub-portion on the base substrate is not overlapped with the orthographic projection of the semiconductor pattern on the base substrate; and a size of the first sub-portion in the second direction is greater than a size of the second sub-portion in the second direction.
In some examples, the display substrate further comprises a power line on a side, away from the base substrate, of the first capacitor electrode; the power line is configured to be electrically connected to the first capacitor electrode of the first sub-pixel to provide the first power voltage.
In some examples, the first sub-pixel further comprises a connection electrode configured to electrically connect the gate electrode of the driving transistor of the first sub-pixel to the second electrode of the another transistor; and an orthographic projection of the connection electrode of the first sub-pixel on the base substrate is at least partially overlapped with an orthographic projection of the second shielding portion of the shielding electrode of the first sub-pixel on the base substrate in the first direction.
In some examples, the orthographic projection of the connection electrode of the first sub-pixel on the base substrate is within a range of an orthographic projection of the integrated structure of the first capacitor electrode and the shielding electrode of the first sub-pixel on the base substrate in the second direction.
In some examples, the pixel circuit further comprises a data writing transistor connected to the driving transistor; the display substrate further comprises a data line configured to be electrically connected to a first electrode of the data writing transistor to provide a data signal; the orthographic projection of the second shielding portion of the first sub-pixel on the base substrate is located between the orthographic projection of the connection electrode of the first sub-pixel on the base substrate and an orthographic projection of the data line on the base substrate.
At least an embodiment of the present disclosure further provides a display device, comprising the display substrate provided by any one of the above embodiments.
In order to clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly described in the following. It is obvious that the described drawings are only related to some embodiments of the present disclosure and thus are not limitative to the present disclosure.
The technical solutions of the embodiments will be described below in a clearly and fully understandable way in connection with the related drawings. Exemplary embodiments of the present disclosure and features and advantageous details thereof will be described more comprehensively. It should be noted the features shown drawings are not necessarily drawn in a real scale. The present disclosure omits descriptions of the knows materials, components, and process technologies, which does not make the exemplary embodiments of the present disclosure obscure. The examples are provided to make the implementation of the exemplary embodiments of the present disclosure better understood, so that those skilled in the art can implement the embodiments. Thus, these embodiments should not be limitative to the scope of the disclosure.
Unless otherwise defined, all the technical and scientific terms used herein have the same meanings as commonly understood by one of ordinary skill in the art to which the present disclosure belongs. The terms “first,” “second,” etc., which are used in the description and claims of the present disclosure, are not intended to indicate any sequence, amount or importance, but distinguish various components. The terms “comprises,” “comprising,” “includes,” “including,” etc., are intended to specify that the elements or the objects stated before these terms encompass the elements or the objects listed after these terms as well as equivalents thereof, but do not exclude other elements or objects. The phrases “connect”, “connected”, etc., are not intended to define a physical connection or a mechanical connection, but may comprise an electrical connection which is direct or indirect. The terms “on,” “under,” “right,” “left” and the like are only used to indicate relative position relationship, and in a case that the position of an object is described as being changed, the relative position relationship may be changed accordingly.
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At least one embodiment of the present disclosure provides a display substrate, including a base substrate, and a first insulating layer, a first conductive layer, a second insulating layer, and a second conductive layer that are disposed on the base substrate in sequence. The first insulating layer includes a first depression structure. The first conductive layer includes a first conductive structure including a bottom surface close to the base substrate, a top surface away from the base substrate, and a first side surface located between the bottom surface and the top surface. The second insulating layer includes a first via hole. The second conductive layer includes a second conductive structure. The second conductive structure is in contact with the first conductive structure through the first via hole. An orthographic projection of the first via hole on the base substrate overlaps at least in part an orthographic projection of the first depression structure on the base substrate. The first via hole exposes at least a portion of the first side surface of the first conductive structure, and the second conductive structure is in contact with the at least portion of the first side surface of the first conductive structure.
The display substrate provided by at least one embodiment of the present disclosure is provided with the first via hole to expose at least a portion of the first side surface of the first conductive structure such that the second conductive structure is in contact with the first side surface of the first conductive structure in addition to the upper surface of the first conductive structure, thereby effectively increasing the contact area of the first conductive structure and the second conductive structure. Not only is the contact resistance reduced and the transmission efficiency of electrical signals improved, but also the side surface of the first conductive structure can be protected, e.g., against erosion by water vapor. Moreover, such an arrangement further increases a cross-sectional area of the second conductive structure in a longitudinal direction (a direction perpendicular to the base substrate). Not only can the interference of the first conductive structure with other conductive structures in the substrate be effectively shielded, but also mutual interference between signal lines located on two sides of the second conductive structure can be reduced.
At least one embodiment of the present disclosure further provides a display substrate, including a base substrate, and a first insulating layer, a first conductive layer, a second insulating layer, and a second conductive layer that are disposed on the base substrate in sequence. The display substrate further includes a plurality of sub-pixels located on the base substrate and arranged in a plurality of pixel rows and a plurality of pixel columns in a first direction and in a second direction, and the first direction is different from the second direction. The first conductive layer includes a first conductive structure, a first signal line, and a second signal line that are spaced apart from one another. The first signal line and the second signal line extend in the second direction. The second conductive layer includes a second conductive structure. The first conductive structure includes a bottom surface close to the base substrate, a top surface away from the base substrate, and a first side surface located between the bottom surface and the top surface. The second insulating layer includes a first via hole, and the second conductive structure is in contact with the first conductive structure through the first via hole. The second conductive structure includes a first protrusion. The first via hole exposes at least a portion of the first side surface of the first conductive structure, and the first protrusion is in contact with the at least portion of the first side surface of the first conductive structure. An orthographic projection of the first protrusion on the base substrate is located between an orthographic projection of the first signal line on the base substrate and an orthographic projection of the second signal line on the base substrate.
In the display substrate provided by at least one embodiment of the present disclosure, the first protrusion of the second conductive structure is in contact with the first side surface of the first conductive structure. Not only is the contact area of the first conductive structure and the second conductive structure increased and the contact resistance therebetween reduced, but also the longitudinal cross-sectional area of the second conductive structure is effectively increased. The interference of the first conductive structure with other conductive structures in the substrate can be effectively shielded. Meanwhile, the first protrusion is disposed between the first signal line and the second signal line so that the mutual interference between the first signal line and the second signal line can also be reduced.
At least one embodiment of the present disclosure further provides a display substrate, including a base substrate, a first insulating layer, a first conductive layer, a second insulating layer, and a second conductive layer that are disposed on the base substrate in sequence, and a pixel electrode located on a side, away from the base substrate, of the second conductive layer. The pixel electrode is configured as a first electrode of a light emitting element and is electrically connected to the second conductive structure. The first insulating layer includes a first depression structure. The first conductive layer includes a first conductive structure, and the second conductive layer includes a second conductive structure. The first conductive structure includes a bottom surface close to the base substrate, a top surface away from the base substrate, and a first side surface located between the bottom surface and the top surface. The second insulating layer includes a first via hole, and the second conductive structure is in contact with the first conductive structure through the first via hole. An orthographic projection of the first via hole on the base substrate overlaps at least in part an orthographic projection of the first depression structure on the base substrate. The second conductive structure includes a first protrusion. The first via hole exposes at least a portion of the first side surface of the first conductive structure, and the first protrusion is in contact with the at least portion of the first side surface of the first conductive structure.
In the display substrate provided by at least one embodiment of the present disclosure, the first protrusion of the second conductive structure is in contact with the first side surface of the first conductive structure, thereby effectively increasing the contact area of the first conductive structure and the second conductive structure, reducing the contact resistance, and improving the transmission efficiency of electrical signals. Moreover, since such an arrangement further increases a cross-sectional area of the second conductive structure in a longitudinal direction (a direction perpendicular to the base substrate), not only can the interference of the first conductive structure with other conductive structures in the substrate be effectively shielded, but also mutual interference between signal lines located on two sides of the second conductive structure can be reduced.
At least one embodiment of the present disclosure further provides a display substrate, including a base substrate, and a first insulating layer, a first conductive layer, a second insulating layer, and a second conductive layer that are disposed on the base substrate in sequence. The first insulating layer includes a first depression structure. The first conductive layer includes a first conductive structure including a bottom surface close to the base substrate, a top surface away from the base substrate, and a first side surface located between the bottom surface and the top surface. The second insulating layer includes a first via hole. The second conductive layer includes a second conductive structure. An orthographic projection of the first via hole on the base substrate overlaps at least in part an orthographic projection of the first depression structure on the base substrate. The first via hole exposes at least a portion of the first side surface of the first conductive structure, and the second conductive structure is in contact with the at least portion of the first side surface of the first conductive structure. The first side surface of the first conductive structure includes a protruding curved surface, and the second conductive structure covers at least a portion of the protruding curved surface. The first conductive structure includes a connection portion located in the first depression structure and connected to the protruding curved surface. In a direction parallel to a surface of the base substrate, the protruding curved surface protrudes towards a middle of the first depression structure relative to the connection portion.
In the display substrate provided by at least one embodiment of the present disclosure, with the above arrangement, not only can the contact area of the first conductive structure and the second conductive structure be effectively increased and the contact resistance reduced, but also a slope of a lapping portion of the second conductive structure and the first side surface can be mitigated such that the second conductive structure is not broken due to great steepness.
At least one embodiment of the present disclosure further provides a display substrate, including a base substrate, and a first insulating layer, a first conductive layer, a second insulating layer, and a second conductive layer that are disposed on the base substrate in sequence. The first conductive layer includes a first conductive structure. The second conductive layer includes a second conductive structure. The first conductive layer includes a first conductive structure including a bottom surface close to the base substrate, a top surface away from the base substrate, and a first side surface located between the bottom surface and the top surface. The second insulating layer includes a first via hole, and the second conductive structure is in contact with the first conductive structure through the first via hole. The second conductive structure includes a first protrusion. The first via hole exposes at least a portion of the first side surface of the first conductive structure, and the first protrusion is in contact with the at least portion of the first side surface of the first conductive structure. The first insulating layer includes a first depression structure and a second depression structure spaced apart from each other. The first conductive structure further includes a second side surface located between the bottom surface and the top surface, and the first side surface is opposite to the second side surface. At least a portion of the first conductive structure is located in the first depression structure and the second depression structure separately.
In the display substrate provided by at least one embodiment of the present disclosure, with the above arrangement, contact relationships of the second insulating layer and the first conductive structure on two sides are similar such that forces acting on two sides of the first conductive structure are balanced, avoiding separation of the second insulating layer from the first conductive structure. Meanwhile, at least a portion of the first conductive structure is located in the depression structure and the second depression structure so that the connection strength of the first conductive structure and the first insulating layer can be improved, avoiding separation between film layers.
At least one embodiment of the present disclosure further provides a display substrate, including a base substrate, and a first metal layer, a second metal layer, a first conductive layer, and a second conductive layer that are disposed on the base substrate in sequence. The display substrate further includes a first sub-pixel and a second sub-pixel that are located on the base substrate and adjacent in a first direction. The first sub-pixel has a first pixel circuit, and the second sub-pixel has a second pixel circuit. The first pixel circuit and the second pixel circuit each include a capacitor that includes a first capacitor electrode located at the second metal layer and a second capacitor electrode located at the first metal layer. The first capacitor electrode of the first pixel circuit and the first capacitor electrode of the second pixel circuit are connected to each other into an integrated capacitor electrode block. The capacitor electrode block has a first opening and a second opening. An orthographic projection of the first opening on the base substrate overlaps an orthographic projection of the second capacitor electrode of the first pixel circuit on the base substrate, and an orthographic projection of the second opening on the base substrate overlaps an orthographic projection of the second capacitor electrode of the second pixel circuit on the base substrate. An area of the orthographic projection of the first opening on the base substrate is different from an area of the orthographic projection of the second opening on the base substrate.
Since adjacent sub-pixels in the first direction are usually different in color, and lightening voltages and data signals are different, a driving circuit needs to be adjusted to balance charging speeds of the two sub-pixels, so as to improve the uniformity of display. Openings of the capacitor electrodes of the two sub-pixels are different; that is, the two sub-pixels are allowed to have different capacitor electrodes and storage capacitors, and thus have different charging speeds, which is conducive to the improvement of the uniformity of display.
For example, the area of the orthographic projection of the first opening on the base substrate is smaller than the area of the orthographic projection of the second opening on the base substrate.
It needs to be noted that the side surface in the present disclosure may be formed by the depression of the top surface, i.e., may be continuous with the top surface.
At least one embodiment of the present disclosure further provides a display substrate, including a base substrate, and a plurality of sub-pixels located on the base substrate. Each of the plurality of sub-pixels includes a pixel circuit configured to drive a light emitting element to emit light. A plurality of pixel circuits of the plurality of sub-pixels are arranged in a plurality of pixel rows and a plurality of pixel columns in a first direction and a second direction, and the first direction is different from the second direction. The pixel circuit includes a driving transistor and a storage capacitor, and the driving transistor is configured to be connected to the light emitting element and to control a driving current flowing through the light emitting element. The storage capacitor includes a first capacitor electrode configured to receive a first power voltage, and a second capacitor electrode. The plurality of sub-pixels include a first sub-pixel. The first sub-pixel further includes a shielding electrode which is disposed in a same layer and of an integrated structure with the first capacitor electrode of the first sub-pixel. The shielding electrode includes a first shielding portion and a second shielding portion. The second shielding portion extends from the first capacitor electrode in the second direction, and the first shielding portion extends from the second shielding portion in the first direction. The display substrate further includes a semiconductor pattern in a same semiconductor layer with an active layer of the driving transistor. In a direction perpendicular to the base substrate, the first shielding portion overlaps at least in part the semiconductor pattern.
The properties of the semiconductor layer are prone to changing under illumination and thus become unstable. The first shielding portion is provided to shield the semiconductor pattern so that the stability of the semiconductor pattern can be improved. For example, the semiconductor pattern may be a portion of the active layer of the transistor, e.g., a semiconductor region or a conductor region. In this case, the above arrangement can effectively improve the stability of the transistor.
As shown in
The first conductive layer 201 includes a first conductive structure 21. The first conductive structure 21 includes a depression structure G2. For example, as shown in
The first conductive structure 21 includes a bottom surface 21a close to the base substrate 100, a top surface 21b away from the base substrate 100, and a first side surface 21c located between the bottom surface 21a and the top surface 21b. The first conductive structure 21 is depressed downwards to form the first side surface 21c. As shown in
The second insulating layer 302 includes a via hole V1 (an example of the first via hole of the present disclosure). The second conductive layer 202 includes a second conductive structure 22 which is in contact with the first conductive structure 21 through the via hole V1. An orthographic projection of the via hole V1 on the base substrate overlaps at least in part an orthographic projection of the depression structure G1 on the base substrate. The via hole V1 exposes at least a portion of the first side surface 21c of the first conductive structure 21, and the second conductive structure 22 is in contact with the at least portion of the first side surface 21c of the first conductive structure 21.
The via hole V1 is provided to expose at least a portion of the first side surface 21c of the first conductive structure 21 such that the second conductive structure 22 is in contact with the first side surface 21c of the first conductive structure 21 in addition to the upper surface 21b of the first conductive structure 21, thereby effectively increasing the contact area of the first conductive structure 21 and the second conductive structure 22, reducing the contact resistance, and improving the transmission efficiency of electrical signals. Moreover, such an arrangement further increases a cross-sectional area of the second conductive structure 22 in a longitudinal direction (the direction perpendicular to the base substrate). Not only can the interference of the first conductive structure with other conductive structures in the substrate be effectively shielded, but also mutual interference between signal lines located on two sides of the second conductive structure can be reduced.
For example, as shown in
As shown in
As shown in
As shown in
Since at least a portion, which is in contact with the second conductive structure 22, of the first side surface 21c is the protruding curved surface, not only can the contact surface be further increased, but also the slope of the lapping portion of the second conductive structure 22 and the first side surface 21c can be mitigated such that the protrusion 220 is not broken due to great steepness.
For example, within the cross section (an example of the first cross section of the present disclosure) shown in
As shown in
As shown in
For example, as shown in
As shown in
Since the first side surface portion is in contact with the second conductive structure 22 and the second side surface 21d is not in contact with the second conductive structure 22, the longitudinal size of the first side surface portion is large such that the flatness of the portion of the second conductive structure 22 that is in contact with the top surface 21b of the first conductive structure 21 can be improved, thus improving the yield of the subsequent fabrication process.
Within the cross section shown in
For example, as shown in
A size of a portion, covered by the second conductive structure 22, of the first side surface 21c of the first conductive structure 21 in the direction perpendicular to the base substrate 100 is denoted as d, and a size of the contact portion 211 of the first conductive structure 21 in the direction perpendicular to the base substrate is denoted as e.
For example, a size (n−d) of a portion, not covered by the second conductive structure 22, of the first side surface portion 21c in the direction perpendicular to the base substrate is greater than the size e of the second side surface 21d in the direction perpendicular to the base substrate.
For example, c/b is greater than 0.1, and We is greater than 0.3.
A ratio r1 of a size of the first side surface portion 21c of the first conductive structure 21 that is covered by the second conductive structure 22 to the size of the first side surface portion 21c is in a positive correlation relationship with a ratio r2 of an overlapping size of the via hole V1 and the depression structure G1 to the size of the depression structure G1; that is, the larger the overlapping ratio r2 of the via hole V1 and the depression structure G1, the larger the size of the first side surface portion 21c of the first conductive structure 21 that is covered by the second conductive structure 22. With the above arrangement, the second conductive structure 22 can effectively cover the side surface of the first conductive structure 21, thus effectively reducing the contact resistance thereof.
For example, the second conducive layer 202 and the first conductive layer 201 are different in material. For example, the second conducive layer 202 includes an ITO/Ag/ITO stacked structure, and the first conductive layer 201 includes a TI/AL/TI stacked structure.
For example, c/b is greater than 0.15, and die is less than 0.8.
For example, c/b is less than 0.19, and d/e is less than 0.5.
For example, in the case where the second conductive structure 22 is configured as a pixel electrode (e.g., a positive electrode) of a light emitting element, since a light emitting material is formed on a surface of the second conductive structure 22, the performance of the light emitting material may be affected by the surface flatness of the second conductive structure 22. If the flatness of the second conductive structure 22 is too low, the light emission efficiency of the light emitting element will be reduced. The overlapping size of the via hole V1 and the depression structure G1 is made small as much as possible within a certain range so that the flatness of the second conductive structure 22 can be improved, thus improving the display performance of the display substrate.
For example, as shown in
For example, d/e<0.0273*i*sin(j)/k.
For example, c/b<0.0102*i*sin(j)/k.
The covered size of the first side surface 21c is positively correlated to the depth of the depression structure G1 and a base angle of the depression structure G1 and negatively correlated to a thickness of the second conductive layer 202. By reducing We or c/b within a certain range, the overlap of the via hole V1 and the depression structure G1 can be reduced, thus reducing the size of the downward protrusion 220 of the second conductive structure 22 and improving the flatness of the second conductive structure 22.
For example, a size of the first side surface 21c in the direction perpendicular to the base substrate is denoted as n, and a size of the second side surface portion in the direction perpendicular to the base substrate 100 is denoted as e. For example, 0.1*(n/e)/sin(j)>(d/n).
The greater a ratio (n/e) of the size of the first side surface 21c to the size of the second side surface 21d, the larger the area of the first side surface 21c needing to be covered. That is, n/e is proportional to d/n. The larger the base angle of the depression structure G1, the greater a slope of a corresponding sidewall of the depression structure G1, and the less the water vapor is likely to stay on the surface and the less the surface needs to be covered. That is, sin(j) is inversely proportional to d/n. The value of d/n is adjusted according to the values of n/e and sin(j) such that the exposed side surface of the first conductive structure is protected sufficiently, reducing corrosion by water vapor and prolonging the operating life of the first conductive structure.
For example, 0.08*(n/e)/sin(j)>d/n.
With the above arrangement, the covered size of the first side surface 21c is made smaller, thus improving the flatness of the second conductive structure 22.
In an example, b=2.821 um, c=0.599 um, c/b=0.212, d=0.3339 um, e=0.5872 um, and d/e=0.569.
In another example, b=2.816 um, c=0.6465, c/b=0.2296, d=0.5603 um, e=0.8477, and die=0.661 um.
As shown in
As shown in
For example, an orthographic projection of the second side surface 21e on the base substrate overlaps at least in part an orthographic projection of the depression structure G3 on the base substrate. The first via hole V1 further exposes at least a portion of the second side surface 21e, and the second conductive structure 22 further covers the at least portion of the second side surface 21e of the first conductive structure 21.
The depression structure G1 and the depression structure G3 are located on two sides of the via hole V1, respectively, and both overlap at least in part the via hole V1 in the direction perpendicular to the base substrate such that the second insulating layer 302 is depressed downwards to expose respectively a portion of the first side surface 21c and a portion of the second side surface 21e; that is, the first conductive structure 21 exhibits a morphology of protruding upwards in the via hole V1. The second conductive structure 22 is in contact with the top surface 21b, the first side surface 21c, and the second side surface 21e of the first conductive structure, thus further increasing the contact area, reducing the contact resistance, and improving the shielding capability and the protection capability.
For example, within the cross section shown in
For example, as shown in
For example, as shown in
As shown in
Each sub-pixel includes a pixel circuit for driving a light emitting element to emit light. A plurality of pixel circuits are arranged in an array in the first direction D1 and the second direction D2. For example, the sub-pixels form a pixel unit in a traditional RGB way to realize full-color display. The present disclosure has no limitations on the arrangement way of the sub-pixels and the way of realizing the full-color display.
For example, as shown in
For example, the pixel circuit may be an nTmC (n and m are positive integers), such as 2T1C (i.e., two transistors and one capacitor), 4T2C, 5T1C, or 7T1C, pixel circuit. Moreover, in different embodiments, the pixel circuit may further include a compensating sub-circuit which includes an internal compensating sub-circuit or an external compensating sub-circuit. The compensating sub-circuit may include a transistor, a capacitor, etc. For example, as needed, the pixel circuit may further include a reset circuit, a light emitting control sub-circuit, a detection circuit, etc. For example, the display substrate may further include a gate driving circuit 13 and a data driving circuit 14 that are located in the non-display region. The gate driving circuit 13 is connected to the pixel circuits through the gate lines 11 to provide various scanning signals, and the data driving circuit 14 is connected to the pixel circuits through the data lines 12 to provide data signals. The positional relationship of the gate driving circuit 13, the data driving circuit 14, the gate lines 11, and the data lines 12 illustrated in
For example, the display substrate 20 may further include a control circuit (not shown). For example, the control circuit is configured to control the data driving circuit 14 to apply the data signals and to control the gate driving-circuit to apply the scanning signals. One example of the control circuit is a timing control circuit (T-con). The control circuit may take various forms, for example, include a processor and a memory. The memory includes an executable code, and the processor runs the executable code to perform the above-mentioned detection method.
For example, the processor may be a central processing unit (CPU) or a processing unit in other form having data processing capability and/or instruction executing capability, for example, may include a microprocessor, a programmable logic controller (PLC), etc.
For example, the memory may include one or more computer program products. The computer program product may include a computer readable storage medium in any form, for example, a volatile memory and/or a nonvolatile memory. The volatile memory may include, for example, a random access memory (RAM) and/or a cache, etc. The nonvolatile memory may include, for example, a read only memory (ROM), a hard disk, a flash memory, etc. One or more computer program instruction may be stored on the computer readable storage medium, and the processor may run a function desired by the program instructions. Various application programs and various kinds of data may also be stored on the computer readable storage medium.
The pixel circuit may include a driving sub-circuit, a data writing sub-circuit, a compensating sub-circuit, and a storage sub-circuit, and may further include a light emitting control sub-circuit, a reset circuit, and the like as needed.
As shown in
For example, the driving sub-circuit 122 includes a control terminal (i.e., a control electrode) 122a, a first terminal 122b, and a second terminal 122c, and is configured to be connected to a light emitting element 120 and to control a driving current for driving the light emitting element 120 based on a voltage on the control electrode. The control terminal 122a of the driving sub-circuit 122 is connected to a first node N1, and the first terminal 122b of the driving sub-circuit 122 connected to a second node N2, and the second terminal 122c of the driving sub-circuit 122 connected to a third node N3.
For example, the data writing sub-circuit 126 is connected to the driving sub-circuit 122 and configured to write a data signal to the first terminal 122b of the driving sub-circuit 122 in response to a first scanning signal. For example, as shown in
For example, the compensating sub-circuit 128 is connected to the driving sub-circuit 122 and configured to compensate the driving sub-circuit 122 in response to a second scanning signal. The second scanning signal may be identical to or different from the first scanning signal. For example, as shown
For example, the pixel circuit further includes a storage sub-circuit 127, a first light emitting control sub-circuit 123, a second light emitting control sub-circuit 124, a first reset sub-circuit 125, and a second reset sub-circuit 129.
For example, the first scanning signal Ga1 may be identical to the second scanning signal Ga2. For example, the first scanning signal Ga1 and the second scanning signal Ga2 may be connected to a same signal output terminal. For example, the first scanning signal Ga1 and the second scanning signal Ga2 may be transmitted through a same scan line.
In some other examples, the first scanning signal Ga1 may also be different from the second scanning signal Ga2. For example, the first scanning signal Ga1 and the second scanning signal Ga2 may be connected to different signal output terminals, respectively. For example, the first scanning signal Ga1 and the second scanning signal Ga2 may be transmitted through different scan lines, respectively.
The storage sub-circuit 127 includes a first terminal (also referred to as a first storage electrode) 127a and a second terminal (also referred to as a second storage electrode) 127b. The first terminal 127a of the storage sub-circuit is configured to receive a first power voltage VDD, and the second terminal 127b of the storage sub-circuit is electrically connected to the control terminal 122a of the driving sub-circuit. For example, at the data writing and compensation phase, the compensating sub-circuit 128 may be switched on in response to the second scanning signal Ga2 so that the data signal written by the data writing sub-circuit 126 can be stored in the storage sub-circuit 127. Meanwhile, the compensating sub-circuit 128 may electrically connect the control terminal 122a and the second terminal 122c of the driving sub-circuit 122 so that related information of a threshold voltage of the driving sub-circuit 122 can be correspondingly stored in the storage sub-circuit. Thus, the stored data signal and threshold voltage may be used to control the driving sub-circuit 122, e.g., at the light emitting phase such that the output of the driving sub-circuit 122 is compensated.
For example, the storage sub-circuit 127 is electrically connected to the control terminal 122a of the driving sub-circuit 122 and a first voltage terminal VDD and configured to store the data signal written by the data writing sub-circuit 126. For example, at the data writing and compensation phase, the compensating sub-circuit 128 may be switched on in response to the second scanning signal Ga2 so that the data signal written by the data writing sub-circuit 126 can be stored in the storage sub-circuit 127. For example, at the data writing and compensation phase, the compensating sub-circuit 128 may electrically connect the control terminal 122a and the second terminal 122c of the driving sub-circuit 122 so that related information of the threshold voltage of the driving sub-circuit 122 can be correspondingly stored in the storage sub-circuit. Thus, the stored data signal and threshold voltage may be used to control the driving sub-circuit 122, e.g., at the light emitting phase such that the output of the driving sub-circuit 122 is compensated.
For example, the first light emitting control sub-circuit 123 is connected to the first terminal 122b (the second node N2) of the driving sub-circuit 122 and the first voltage terminal VDD and configured to apply a first power voltage of the first voltage terminal VDD to the first terminal 122b of the driving sub-circuit 122 in response to a first light emitting control signal EM1. For example, as shown in
For example, the second light emitting control sub-circuit 124 is connected to a second light emitting control terminal EM2, a first terminal 134 of the light emitting element 120, and the second terminal 122c of the driving sub-circuit 122, and configured to enable a driving current to be applied to the driving sub-circuit 122 in response to a second light emitting control signal.
For example, at the light emitting phase, the second light emitting control sub-circuit 123 is switched on in response to the second light emitting control signal EM2 provided by the second light emitting control terminal EM2 so that the driving sub-circuit 122 can be electrically connected to the light emitting element 120 through the second light emitting control sub-circuit 123, thereby driving the light emitting element 120 to emit light under the control of the driving current. At a non-light-emitting phase, the second light emitting control sub-circuit 123 is switched off in response to the second light emitting control signal EM2, avoiding a current from flowing through the light emitting element 120 to allow it to emit light. A contrast of a corresponding display device can be increased.
For another example, at an initialization phase, the second light emitting control sub-circuit 124 may also be switched on in response to the second light emitting control signal and thus can be combined with a reset circuit to reset the driving sub-circuit 122 and the light emitting element 120.
For example, the second light emitting control signal EM2 may be identical to the first light emitting control signal EM1. For example, the second light emitting control signal EM2 and the first light emitting control signal EM may be connected to a same signal output terminal. For example, the second light emitting control signal EM2 and the first light emitting control signal EM may be transmitted through a same light emitting control line.
For some other examples, the second light emitting control signal EM2 may be different from the first light emitting control signal EM1. For example, the second light emitting control signal EM2 and the first light emitting control signal EM1 may be connected to different signal output terminals, respectively. For example, the second light emitting control signal EM2 and the first light emitting control signal EM1 may be transmitted through different light emitting control lines, respectively.
For example, the first reset sub-circuit 125 is connected to a first reset voltage terminal Vinit1 and the control terminal 122a (the first node N1) of the driving sub-circuit 122, and configured to apply a first reset voltage Vinit1 to the control terminal 122a of the driving sub-circuit 122 in response to a first reset control signal Rst1.
For example, the second reset sub-circuit 129 is connected to a second reset voltage terminal Vinit2 and a first terminal 134 (a fourth node N4) of the light emitting element 120, and configured to apply a second reset voltage Vinit2 to the first terminal 134 of the light emitting element 120 in response to a second reset control signal Rst2. For example, the first reset voltage Vinit1 and the second reset voltage Vinit2 may be a same voltage signal or different voltage signal. For example, the first reset voltage Vinit1 and the second reset voltage Vinit2 are connected to a same reset voltage source terminal (e.g., located in the non-display region) to receive the same reset voltage.
For example, the first reset sub-circuit 125 and the second reset sub-circuit 129 may be switched on in response to the first reset control signal Rst1 and the second reset control signal Rst2, respectively, so that the second reset voltage Vinit2 and the first reset voltage Vinit1 can be applied to the first node N1 and the first terminal 134 of the light emitting element 120, respectively. Thus, the driving sub-circuit 122, the compensating sub-circuit 128, and the light emitting element 120 can be reset, eliminating the influence of a previous light emitting phase.
For example, the second reset control signal Rst2 for each row of sub-pixels and the first scanning signal Ga1 for the row of sub-pixels may be a same signal and may be transmitted through a same gate line 11. For example, the first reset control signal Rst1 for each row of sub-pixels and the first scanning signal Ga1 for a previous row of sub-pixels may be transmitted through a same gate line 11.
For example, the light emitting element 120 includes the first terminal (also referred to as a first electrode or a pixel electrode) 134 and a second terminal (also referred to as a second electrode) 135. The first terminal 134 of the light emitting element 120 is connected to the fourth node, and the second terminal 135 of the light emitting element 120 is configured to be connected to a second voltage terminal VSS. For example, in an example, as shown in
It needs to be noted that in the description of the embodiments of the present disclosure, the first node N1, the second node N2, the third node N3, and the fourth node N4 do not necessarily represent actually existing components, and instead, represent junctions of related circuit connections in a circuit diagram.
It needs to be noted that in the description of the embodiments of the present disclosure, symbol Vd may represent either a data signal terminal or a level of a data signal. Likewise, symbols Ga1 and Ga2 may represent either a first scanning signal and a second scanning signal or a first scanning signal terminal and a second scanning signal terminal; symbols Rst1 and Rst2 may represent either reset control terminals or reset control signals; symbols Vinit1 and Vinit2 may represent either a first reset voltage terminal and a second reset voltage terminal or a first reset voltage and a second reset voltage; symbol VDD may represent either a first voltage terminal or a first power voltage; and symbol VSS may represent either a second voltage terminal or a second power voltage. These are the same as above in the following embodiments, which will not be described redundantly.
For example, as shown in
For example, as shown in
For example, as shown in
For example, as shown in
For example, the light emitting element 120 is specifically implemented as a light emitting diode (LED), e.g., an organic LED (OLED), a quantum-dot LED (QLED), or an inorganic LED, such as a micro LED or a micro OLED. For example, the light emitting element 120 may be of a top-emitting structure, a bottom-emitting structure or a double-sided emitting structure. The light emitting element 120 may emit red light, green light, blue light, white light or the like. The embodiments of the present disclosure have no particular limitation on the specific structure of the light emitting element.
For example, the light emitting element 120 includes a first electrode 134, a second electrode 135, and an organic functional layer sandwiched between the first electrode 134 and the second electrode 135. The organic functional layer includes a light emitting layer. As needed, the organic functional layer may also include a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, etc.
For example, the first electrode 134 (also referred to as a pixel electrode, e.g., a positive electrode) of the light emitting element 120 is connected to the fourth node N4 and configured to be connected to the second terminal 122c of the driving sub-circuit 122 through the second light emitting control sub-circuit 124. The second electrode 135 (e.g., a negative electrode) of the light emitting element 120 is configured to be connected to the second voltage terminal VSS to receive the second power voltage VSS. A current flowing from the second terminal 122c of the driving sub-circuit 122 into the light emitting element 120 determines the brightness of the light emitting element. For example, the second voltage terminal may be grounded. That is, VSS may be 0 V. For example, the second power voltage VSS may be a negative voltage.
For example, the second light emitting control sub-circuit 124 may be implemented as the fifth transistor T5. A gate of the fifth transistor T5 is connected to a second light emitting control line (the second light emitting control terminal EM2) to receive the second light emitting control signal. A first electrode of the fifth transistor T5 is connected to the second terminal 122c (the third node N3) of the driving sub-circuit 122. A second electrode of the fifth transistor T5 is connected to the first terminal 134 (the fourth node N4) of the light emitting element 120.
For example, the first reset sub-circuit 125 may be implemented as the sixth transistor T6, and the second reset sub-circuit is implemented as the seventh transistor T7. A gate of the sixth transistor T6 is configured to be connected to a first reset control terminal Rst1 to receive the first reset control signal Rst1. A first electrode of the sixth transistor T6 is connected to the first reset voltage terminal Vinit1 to receive the first reset voltage Vinit1. A second electrode of the sixth transistor T6 is configured to be connected to the first node N1. A gate of the seventh transistor T7 is configured to be connected to a second reset control terminal Rst2 to receive the second reset control signal Rst2. A first electrode of the seventh transistor T7 is connected to the second reset voltage terminal Vinit2 to receive the second reset voltage Vinit2. A second electrode of the seventh transistor T7 is configured to be connected to the fourth node N4.
It needs to be noted that all the transistors used in the embodiments of the present disclosure may be thin-film transistors or field effect transistors or other switching devices having the same characteristics. The thin-film transistor is described as an example in the embodiments of the present disclosure. The source and the drain of a transistor used herein may be structurally symmetrical and thus may be structurally indistinguishable. In an embodiment of the present disclosure, to distinguish between other two electrodes than the gate of the transistor, one electrode is directly described as the first pole, while the other electrode as the second pole.
Moreover, transistors may be divided into an N-type transistor and a P-type transistor by the characteristic of a transistor. When the transistor is a P-type transistor, a switch-on voltage is a low-level voltage (e.g., 0 V, −5 V, −10 V or other suitable voltage), and a switch-off voltage is a high-level voltage (e.g., 5 V, 10 V or other suitable voltage). When the transistor is an N-type transistor, a switch-on voltage is a high-level voltage (e.g., 5 V, 10 V or other suitable voltage), and a switch-off voltage is a low-level voltage (e.g., 0 V, −5 V, −10 V or other suitable voltage). For example, as shown in
The working principle of the pixel circuit shown in
As shown in
At the initialization phase 1, the first reset control signal Rst1 is input to switch on the sixth transistor T6, and the first reset voltage Vinit1 is applied to the gate of the first transistor T1, thus resetting the first node N1.
At the data writing and compensation phase 2, the first scanning signal Ga1, the second scanning signal Ga2, and the data signal Vd are input to switch on the second transistor T2 and the third transistor T3. The data signal Vd is written to the second node N2 by the second transistor T2, and the first node N1 is charged through the first transistor T1 and the third transistor T3. The first transistor T1 is switched off when the potential of the first node N1 changes to Vd+Vth, wherein Vth is the threshold voltage of the first transistor T1. The potential of the first node N1 is retained by being stored in the storage capacitor Cst. In other words, voltage information with the data signal and the threshold voltage Vth is stored in the storage capacitor Cst for subsequently providing gray-level display data and compensate the threshold voltage of the first transistor T1 at the light emitting phase.
At the data writing and compensation phase 2, the second reset control signal Rst2 may also be input to switch on the seventh transistor T7, and the second reset voltage Vinit2 is applied to the fourth node N4, thus resetting the fourth node N4. For example, resetting the fourth node N4 may also be carried out at the initialization phase 1. for example, the first reset control signal Rst1, and the second reset control signal Rst2 may be identical. The embodiments of the present disclosure are not limited thereto.
At the light emitting phase 3, the first light emitting control signal EM1 and the second light emitting control signal EM2 are input to switch on the fourth transistor T4, the fifth transistor T5, and the first transistor T1, and the fifth transistor T5 applies a driving current to an OLED such that the OLED emits light. A value of the driving current I flowing through the OLED may be derived according to the following formula:
I=K(VGS−Vth)2=K[(Vdata+Vth−VDD)−Vth]2=K(Vdata−VDD)2, wherein K is an electrical conductivity coefficient of the first transistor.
In the above formula, Vth represents the threshold voltage of the first transistor T1; VGS represents a voltage between the gate and the source (which is the first electrode here) of the first transistor T1; and K is a constant related to the first transistor T1 itself. As can be seen from the above calculation formula of I, the driving current I flowing through the OLED is no longer related to the threshold voltage Vth of the first transistor T1. Thus, compensation for the pixel circuit can be realized. The problem of threshold voltage drift of the driving transistor (the first transistor T1 in the embodiments of the present disclosure) due to the manufacturing process and long-time operation is solved, and its influence on the driving current I is eliminated. Accordingly, the display effect of a display device using the same can be improved.
The structure of a display substrate provided by at least one embodiment of the present disclosure will be described below exemplarily by taking the pixel circuit shown in
As shown in
For ease of description,
With reference to
For ease of description, the gate, the first pole, the second pole, and a channel region of the nth transistor Tn are denoted by Tng, Tns, Tnd, and Tna in the following description, respectively, wherein n is 1 to 7.
It needs to be noted that the so-called “disposed in a same layer” in the present disclosure refers to that two (or more than two) structures are formed through a same deposition process and patterned through a same patterning process, but are not necessarily located in a same horizontal plane, and may be made of a same material or different materials. It needs to be noted that the so-called “integrated structure” in the present disclosure refers to a structure that is formed by connecting two (or more than two) structures formed through a same deposition process and patterned through a same patterning process to each other, and the structures may be made of a same material or different materials.
For example, as shown in
For example, as shown in
For example, as shown in
As shown in
For example, the first conductive layer 201 further includes a plurality of scan lines 210, a plurality of reset control lines 220, and a plurality of light emitting control lines 230 that are insulated from one another. These signal lines may be examples of the gate lines 11 shown in
The scan line 210 is electrically connected (or of an integrated structure) with the gates T2g of the second transistors T2 in the corresponding row of sub-pixels to provide the first scanning signal Ga1, and the reset control line 220 is electrically connected (or of an integrated structure) with the gates T6g of the sixth transistors T6 in the corresponding row of sub-pixels to provide the first reset control signal Rst1. The light emitting control line 230 is electrically connected to the gates T4g of the fourth transistors T4 in the corresponding row of sub-pixels to provide the first light emitting control signal EM1.
For example, as shown in
For example, the first gate T3g1 extends in the first direction D1 and is a portion of the scanning line 210. The second gate T3g2 extends in the second direction D2 and is an extension portion of the scan line 210 that extends in the second direction D2.
For example, as shown in
For example, as shown in
For example, the conductive layer 502 may further include a plurality of reset voltage lines 240 extending in the first direction D1. The plurality of reset voltage lines 240 are in one-to-one corresponding connection with a plurality of rows of sub-pixels. The reset voltage line 240 is electrically connected to the first electrodes of the sixth transistors T6 in the corresponding row of sub-pixels to provide the first reset voltage Vinit1.
For example, as shown in
For example, as shown in
For example, with reference to
For example, as shown in
As shown in
For example, the shielding electrode 221, the first electrode T2s of the second transistor T2 directly facing (overlapping) the shielding electrode, and the second electrode T6d of the sixth transistor T6 form a stable capacitor. The shielding electrode 221 is configured to load a fixed voltage. Since a voltage difference between two ends of the capacitor cannot change sharply, the stability of voltages on the first electrode T2s of the second transistor T2, the conductive region T3c of the third transistor T3, and the second electrode T6d of the sixth transistor T6 is improved. For example, the shielding electrode 221 is electrically connected to a power line 250 in the conductive layer 503 to load the first power voltage VDD.
For example, the shielding electrode 221 is L-shaped, V-shaped, or T-shaped. As shown in
Since the first capacitor electrode Ca is configured to be electrically connected to the power line 250. The above arrangement enables the shielding electrode 221 to be connected to the power line 250 through the first capacitor electrode Ca in the same layer, thus avoiding the formation of the via hole 341 and simplifying the design. For example, as shown in
For example, the conductive layer 503 further includes a plurality of data lines 12 extending in the second direction D2. For example, the plurality of data lines 12 are electrically connected to a plurality of columns of sub-pixels correspondingly one to one to provide the data signal Vd. For example, the data line 12 is electrically connected to the first electrodes T2s of the second transistors T2 in the corresponding column of sub-pixels through via holes 346 to provide the data signal. For example, the via hole 346 penetrates through the insulating layer 401, the insulating layer 402, and the insulating layer 403. For example, with reference to
As shown in
As shown in
With the above arrangement, the shielding protection effect of the second shielding portions on the connection electrode 231 can be effectively improved. For example, some jump signals can be shielded and prevented from affecting the potential of the connection electrode 231 to affect the potential of the gate of the driving transistor.
For example, as shown in
For example, with reference to
For example, as shown in
In some other examples, as shown in
For example, an orthographic projection of the connection portion on the base substrate overlaps an orthographic projection of the reset voltage line 240 on the base substrate and an orthographic projection of the first electrode T6s of the reset transistor on the base substrate.
For example, as shown in
As shown in
For example, as shown in
With reference to
For example, with reference to
As shown in
For example, the reset voltage line 270 is connected in parallel to the reset voltage line 260 and/or the reset voltage line 240 to further reduce the resistance of the reset voltage line, thus reducing the voltage drop on the reset voltage line. For example, the reset voltage line 270 is electrically connected to the reset voltage line 260 and/or the reset voltage line 240 in the non-display region. The reset voltage lines 270 are not necessary.
It needs to be noted that the distribution of the first electrodes of the light emitting elements of the display substrate provided by the embodiments of the present disclosure is not limited to the case shown in
As shown in
The two green pixels have a same shape and a same area, and areas of the blue pixel, the green pixels, and the red pixel are different from one another. For example, the blue sub-pixel having the lowest efficiency has the largest area and the red sub-pixel having the highest efficiency has the smallest area so as to realize better color intensity and image resolution.
For example, materials of the conductive layers may include: gold (Au), silver (Ag), copper (Cu), aluminum (Al), molybdenum (Mo), magnesium (Mg), tungsten (W), and alloy materials formed by such metals; or conductive metal oxide materials such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and zinc oxide aluminum (AZO); or a stacked structure of a plurality of layers of metals; or a stacked structure of a metal and a conductive metal oxide.
For example, the conductive layer 504 includes a TI/AL/TI stacked structure.
For example, the material of the conductive layer 505 is a transparent conductive material, e.g, a metal oxide material, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and zinc oxide aluminum (AZO). For example, the conducive layer 505 includes an ITO/Ag/ITO stacked structure.
For example, the light emitting element 120 is of a top-emitting structure. The first electrode (i.e., the pixel electrode) 134 is reflective while the second electrode 135 is transmissive or semi-transmissive. For example, the first electrode 134 is a positive electrode, and the second electrode 135 is a negative electrode. For example, the first electrode 134 is an ITO/Ag/ITO stacked structure. The transparent electrically conductive material ITO is a high-work-function material and may be in direct contact with a light emitting material to increase a hole injection rate. The metal material Ag is conducive to improving the reflectivity of the first electrode. For example, the second electrode layer 135 is made of a low-work-function material, e.g., a semi-transmitting metal or metal alloy material (e.g., an Ag/Mg alloy material), to act as the negative electrode.
For example, a material of each insulating layer is, e.g., an inorganic insulating layer, e.g., silicon oxides, silicon nitrides, or silicon oxynitrides, such as silicon oxide, silicon nitride, and silicon oxynitride, or an insulating material including metal oxynitrides such as aluminum oxide and titanium nitride.
For example, a material of the pixel defining layer 405 is an organic material, e.g., an organic insulating material such as polyimide (PI), acrylate, epoxy resin, and polymethyl methacrylate (PMMA).
For example, the base substrate 100 may be a rigid substrate, such as a glass substrate and a silicon substrate, and may also be formed from a flexible material with excellent heat resistance and durability, such as polyimide (PI), polycarbonate (PC), polyethylene terephthalate (PET), polyethylene, polyacrylate, polyarylate, polyetherimide, polyethersulfone, polyethylene terephthalate (PET), polyethylene (PE), polypropylene (PP), polysulfone (PSF), polymethyl methacrylate (PMMA), triacetate cellulose (TAC), cycloolefin polymer (COP), and cycloolefin copolymer (COC).
For example, a material of the semiconductor material 102 includes but is not limited to Si-based materials (amorphous silicon (a-Si), polycrystalline silicon (p-Si), etc.), metal-oxide semiconductors (IGZO, ZnO, AZO, IZTO, etc.), and organic materials (sexithiophene, polythiophene, etc.).
For example, the display substrate 20 includes the structure shown in
With reference to
As shown in
As shown in
As shown in
As shown in
With the protrusion 134a of the first electrode 134 disposed in contact with the first side surface 232c of the connection electrode 232, not only is the contact area of the first electrode 134 and the connection electrode 232 increased and the contact resistance therebetween reduced, but also the longitudinal cross-sectional area of the first electrode 134 is effectively increased. Meanwhile, the protrusion 134a is disposed between the first signal line and the second signal line so that the mutual interference between the first signal line and the second signal line can also be reduced. For example, since a high-frequency signal is transmitted in the data line, it is easy to cause interference with signals in other signal lines. For example, the protrusion 134a may reduce the interference of the data line 12 on one side with a signal in the signal line (such as a data line, a power line, and a reset voltage line) on the other side.
With reference to
For example, as shown in
As shown in
Within the section cross shown in
For example, as shown in
As shown in
For example, overlapping situations of the via hole 349 and the via hole 350 in each sub-pixel overlap are different. As shown in
For example, for each row of sub-pixels, there are three continuous adjacent sub-pixels having the structure shown in
For example, a plurality of columns of sub-pixels include a pixel column in which each sub-pixel has the structure shown in
The pixel defining layer 405 includes a plurality of pixel opening regions 600 and a non-opening region. For example, the pixel defining layer 405 further has a plurality of spaced protrusion portions 405a formed in the non-opening region. That is, the pixel defining layer 405 has a nonuniform thickness. The protrusion portions 405a are capable of playing a role of supporting a mask during evaporation. In some examples, the protrusion portion is also referred to as a spacer.
As shown in
For example, the orthographic projection of the via hole 350 on the base substrate is separated from, i.e., does not overlap, the orthographic projection of a portion having a maximum thickness of the pixel defining layer on the base substrate (i.e., the orthographic projection of the top of the protrusion portion 405a). Such an arrangement can avoid the adverse effect on the supporting function caused by uneven top of the protrusion portion 405a due to the provision of the via hole 350. For example, the unevenness of the protrusion portion 405a may lead to tilting of the mask, thus rendering the organic functional layer (including the light emitting layer) formed by evaporation uneven.
As shown in
As shown in
For example, as shown in
For example, as shown in
As shown in
For example, in this case, a data line (an example of the third signal line in the present disclosure) and a power line (an example of the fourth signal line of the present disclosure) correspondingly connected to the sub-pixel column (an example of the third pixel column of the present disclosure, the first column of sub-pixels starting from the left side in
The structure of a display substrate provided by some other embodiments of the present disclosure will be described below exemplarily by taking the pixel circuit shown in
As shown in
For ease of description,
For example, as shown in
For ease of description, the gate, the first pole, the second pole, and a channel region of the nth transistor Tn are denoted by Tng, Tns, Tnd, and Tna in the following description, respectively, wherein n is 1 to 7.
It needs to be noted that the so-called “disposed in a same layer” in the present disclosure refers to that two (or more than two) structures are formed through a same deposition process and patterned through a same patterning process, but are not necessarily located in a same horizontal plane, and may be made of a same material or different materials. It needs to be noted that the so-called “integrated structure” in the present disclosure refers to a structure that is formed by connecting two (or more than two) structures formed through a same deposition process and patterned through a same patterning process to each other, and the structures may be made of a same material or different materials.
For example, as shown in
For example, the self-aligned process is carried out for the display substrate 20. The semiconductor layer 105 is processed into a conductor (e.g., doped) with the conductive layer 711 as a mask such that a portion of the semiconductor layer 105 that is not covered with the conductive layer 711 becomes a conductor. Thus, the portions, located on two sides of the channel region of each transistor, of the semiconductor layer are formed into conductors to act as the first electrode and the second electrode of the transistor, respectively. For example, the semiconductor layer 105 is made of a low-temperature polycrystalline silicon material.
For example, as shown in
The scan line 710 is electrically connected (or of an integrated structure) with the gates T2g of the second transistors T2 in the corresponding row of sub-pixels to provide the first scanning signal Ga1, and the reset control line 720 is electrically connected (or of an integrated structure) with the gates T6g of the sixth transistors T6 in the corresponding row of sub-pixels to provide the first reset control signal Rst1. The light emitting control line 730 is electrically connected to the gates T4g of the fourth transistors T4 in the corresponding row of sub-pixels to provide the first light emitting control signal EM1. For example, the scan line 710 for the current row of sub-pixels may act as the reset control line 720 for next row of sub-pixels.
For example, as shown in
For example, as shown in
As shown in
Lightening voltages and data signals for the green pixel, the red pixel, and the blue pixel are different. The driving circuit of the green pixel needs to be adjusted to increase the charging speed of the green pixel so that the uniformity of display can be improved. A large opening 722 is provided so that the area of the first capacitor electrodes Ca can be reduced, allowing the green pixel to have a small storage capacitor Cst and thus increasing the charging speed. In some other embodiments, the storage capacitance of the green pixel may also be reduced in other ways, e.g., by reducing the area of the second capacitor electrode Cb or adjusting a width to length ratio of the driving transistor.
For example, the conductive layer 712 may further include a first auxiliary control line 721, a second auxiliary control line 725, and reset voltage lines 723 and 724 that extend in the first direction D1, which will be specifically described below with reference to
As shown in
For example, the semiconductor layer 106 is made of an oxide semiconductor, e.g., a material such as IGZO, ZnO, AZO, and IZTO.
The oxide thin-film transistors have the advantage of small leakage current. Since the third transistor T3 and the sixth transistor T6 are transistors directly connected to the gate of the first transistor T1 (i.e., the driving transistor). Therefore, the stability of the third transistor T3 and the sixth transistor T6 directly affects the stability of the voltage of the gate of the first transistor T1 (the node N1). The third transistor T3 and the sixth transistor are N-type metal oxide thin-film transistors, which is conducive to reducing the leakage current of the transistors and thus conducive to maintaining the voltage of the node N1. Thus, at the compensation phase, the threshold voltage of the first transistor T1 can be compensated fully, and then the display uniformity of the display substrate at the light emitting phase is improved.
For example, the self-aligned process is carried out for the display substrate 20. The second semiconductor layer 106 is processed into a conductor (e.g., doped) with the conductive layer 713 as a mask such that a portion of the semiconductor layer 106 that is not covered with the conductive layer 713 becomes a conductor. Thus, the portions, located on two sides of the channel regions of the third transistor T3 and the sixth transistor T6, of the semiconductor layer 106 are formed into conductors to act as the first electrodes and the second electrodes of the third transistor T3 and the sixth transistor T6, respectively.
For example, with reference to
Thus, the first auxiliary control line 721 may serve as a light shading layer to prevent light from being incident on the channel region of the third transistor T3 from the back of the channel region to produce a bad influence on the characteristic of the third transistor T3. For example, the oxide semiconductor material is sensitive to light. When the channel region of the third transistor T3 is made of the oxide semiconductor material, a threshold drift of the third transistor T3 may be caused easily when light is incident on the channel region. With the first auxiliary control line 721, the stability of the third transistor T3 can be improved, thereby further stabilizing the gate voltage of the first transistor T1.
For example, the scan line 740 and the first auxiliary control line 721 are configured to receive a same scanning signal. Thus, the third transistor T3 forms a double-sided gate structure, thereby improving the gate control capability of the third transistor T3 and further stabilizing the gate voltage of the first transistor T1.
For example, with reference to
Thus, the first second auxiliary control line 725 may serve as a light shading layer to prevent light from being incident on the channel region of the sixth transistor T6 from the back of the channel region to produce a bad influence on the characteristic of the sixth transistor T6. For example, the oxide semiconductor material is sensitive to light. When the channel region of the sixth transistor T6 is made of the oxide semiconductor material, a threshold drift of the sixth transistor T6 may be caused easily when light is incident on the channel region. With the second auxiliary control line 725, the stability of the sixth transistor T6 can be improved, thereby further stabilizing the gate voltage of the first transistor T1.
For example, the reset control line 750 and the second auxiliary control line 725 are configured to receive a same scanning signal. Thus, the sixth transistor T6 forms a double-sided gate structure, thereby improving the gate control capability of the sixth transistor T6 and further stabilizing the gate voltage of the first transistor T1.
In some other examples, the active layer of the seventh transistor T7 may also be disposed in the semiconductor layer 106, e.g., made of an oxide semiconductor material. Since the seventh transistor T7 is directly electrically connected to the first electrode 134 of the light emitting element 120, such an arrangement can reduce the leakage current of the seventh transistor T7 and improve the stability of the potential of the first electrode 134, thus improving the stability of light emission.
As shown in
In the direction perpendicular to the base substrate, the reset control line 820 overlaps at least in part the auxiliary control line 810. For example, an orthographic projection of the channel region, located below the reset control line 820, of the seventh transistor T7 on the base substrate is located within an orthographic projection of the auxiliary control line 810 on the base substrate.
In this case, the connection manner of the seventh transistor T7 needs to be adapted. For example, the second electrode T7d of the seventh transistor T7 is no longer directly electrically connected to the second electrode T5d of the seventh transistor T5 in the semiconductor layer 105, and instead, through a via hole, which will not be redundantly described here.
For example, the light shading layer LS may further include a second light shading pattern LS2. The second light shading pattern LS2 is disposed correspondingly to the channel regions of the third transistor T3 and the sixth transistor T6, and orthographic projections of the channel regions of the third transistor T3 and the sixth transistor T6 on the base substrate fall within the second light shading pattern LS2, thus shielding the channel regions of the third transistor T3 and the sixth transistor T6. The leakage currents of the third transistor T3 and the sixth transistor T6 are effectively reduced, and the stability of the first node N1 is further improved.
For example, the light shading layer LS may be made of, for example, a metal material, or an organic or inorganic insulating light shading material.
For example, with reference to
For example, with reference to
For example, the conductive layer 714 further includes a connection electrode 704. The connection electrode 704 is electrically connected to the second electrode T5d of the fifth transistor T5 and the second electrode T7d of the seventh transistor T7 through via holes 905 to electrically connect the second electrode T5d of the fifth transistor T5 and the second electrode T7d of the seventh transistor T7 with the first electrode 134 of the light emitting element 120.
For example, the conductive layer 714 further includes a connection electrode 708 configured to load the first power voltage VDD. The connection electrode 708 is electrically connected to the first electrode T4s of the fourth transistor T4 and the first capacitor electrode Ca through a via hole 909 and a via hole 915, respectively.
For example, the conductive layer 714 further includes a connection electrode 709. The connection electrode 709 is electrically connected to the first electrode T2s of the second transistor T2 through a via hole 908.
For example, with reference to
For example, as shown in
For example, as shown in
As shown in
As shown in
For example, the conductive layer 715 further includes a plurality of data lines 12 extended in the second direction D2. For example, the plurality of data lines 12 are electrically connected to a plurality of columns of sub-pixels in one-to-one correspondence to provide the data signal Vd. Each data line 12 is electrically connected to the first electrode T2s of the second transistor T2 in the corresponding column of sub-pixels to provide the data signal Vd.
With reference to
For example, the conductive layer 715 further includes a plurality of power electrodes 920. The plurality of power electrodes 920 are disposed in one-to-one correspondence with the plurality of sub-pixels to provide the first power voltage VDD. The power electrode 920 includes a depression structure configured to be provided with other conductive structure (e.g. the connection electrode 910 mentioned below). The power electrodes 920 corresponding to a column of sub-pixels are connected to one another into an integrated structure so as to form a power line 770 extended in the second direction D2.
With reference to
For example, as shown in
The orthographic projections of the two data lines 12 on the base substrate 100 do not overlap the orthographic projections of the reset voltage lines 760 and 780 on the base substrate, thus avoiding the generation of parasitic capacitance.
Adjacent power lines 770 are spaced apart from each other. For example, as shown in
With reference to
With the connection electrodes 910 and 704 as transfer electrodes, the first electrode of the transistor below is led out to be electrically connected to the light emitting element above. Such an arrangement may avoid poor connection, line breakage, or unevenness resulting from an excessive filling depth of an electrically conductive material due to a directly penetrating via hole in the direction perpendicular to the base substrate. With the transfer electrodes, the depth of the via hole is reduced and the contact efficiency is improved.
As shown in
As shown in
For example, as shown in
With reference to
It needs to be noted that the distribution of the first electrodes of the light emitting elements of the display substrate provided by the embodiments of the present disclosure is not limited to the case shown in
For example, materials of the conductive layers may include: gold (Au), silver (Ag), copper (Cu), aluminum (Al), molybdenum (Mo), magnesium (Mg), tungsten (W), and alloy materials formed by such metals; or conductive metal oxide materials such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and zinc oxide aluminum (AZO); or a stacked structure of a plurality of layers of metals; or a stacked structure of a metal and a conductive metal oxide.
For example, the light emitting element 120 is of a top-emitting structure. The first electrode (i.e., the pixel electrode) 134 is reflective while the second electrode 135 is transmissive or semi-transmissive. For example, the first electrode 134 is a positive electrode, and the second electrode 135 is a negative electrode. For example, the first electrode 134 is an ITO/Ag/ITO stacked structure. The transparent electrically conductive material ITO is a high-work-function material and may be in direct contact with a light emitting material to increase a hole injection rate. The metal material Ag is conducive to improving the reflectivity of the first electrode. For example, the second electrode layer 135 is made of a low-work-function material, e.g., a semi-transmitting metal or metal alloy material (e.g., an Ag/Mg alloy material), to act as the negative electrode.
For example, a material of each insulating layer is, e.g., an inorganic insulating layer, e.g., silicon oxides, silicon nitrides, or silicon oxynitrides, such as silicon oxide, silicon nitride, and silicon oxynitride, or an insulating material including metal oxynitrides such as aluminum oxide and titanium nitride.
For example, the material of the pixel defining layer 608 is an organic material, e.g., an organic insulating material such as polyimide (PI), acrylate, epoxy resin, and polymethyl methacrylate (PMMA).
For example, the base substrate 100 may be a rigid substrate, such as a glass substrate and a silicon substrate, and may also be formed from a flexible material with excellent heat resistance and durability, such as polyimide (PI), polycarbonate (PC), polyethylene terephthalate (PET), polyethylene, polyacrylate, polyarylate, polyetherimide, polyethersulfone, polyethylene terephthalate (PET), polyethylene (PE), polypropylene (PP), polysulfone (PSF), polymethyl methacrylate (PMMA), triacetate cellulose (TAC), cycloolefin polymer (COP), and cycloolefin copolymer (COC).
For example, the materials of the semiconductor materials 105 and 106 include but are not limited to Si-based materials (amorphous silicon (a-Si), polycrystalline silicon (p-Si), etc.), oxide semiconductor materials such as metal-oxide semiconductors (IGZO, ZnO, AZO, IZTO, etc.), and organic materials (sexithiophene, polythiophene, etc.).
For example, the display substrate 20 includes the structure shown in
With reference to
The connection electrode 704 is electrically connected to the connection electrode 910 (an example of the second conductive structure of the present disclosure) through a via hole 911 (an example of the first via hole of the present disclosure). The via hole 911 overlaps at least in part the via hole 905 (an example of the first depression structure of the present disclosure) in the direction perpendicular to the base substrate such that the insulating layer 606 (an example of the second insulating layer of the present disclosure) is depressed downwards. The via hole 911 exposes at least a portion of the first side surface 704c of the connection electrode 704, and the connection electrode 910 is depressed downwards and includes a protrusion 910a (another example of the first protrusion of the present disclosure). The protrusion 910a is in contact with at least a portion of the first side surface 704c and covers the portion of the first side surface 704c that is exposed by the via hole 911.
With reference to
For example, as shown in
For example, within the cross section shown in
As shown in
For example, within the cross section shown in
For example, c/b is greater than 0.1, and d/e is greater than 0.3. For example, c/b is greater than 0.28.
For example, d/n is greater than 0.6.
The covered size of the first side surface 704c is positively correlated to the depth of the via hole 905 and a base angle of the via hole 905 and negatively correlated to a thickness of the connection electrode 910. By reducing We or c/b within a certain range, the overlap of the via hole 911 and the via hole 905 can be reduced, thus reducing the size of the downward protrusion 910a of the connection electrode 910 and improving the flatness of the connection electrode 910. Thus, the flatness of the pixel electrode above is improved, and the display quality is improved.
For example, d/e>2.5*i*sin(j)/k.
The above arrangement may increase the overlapping area of the connection electrode 910 and the connection electrode 704 in the longitudinal direction, which is conductive to reducing the planar areas of the via hole 911 and the via hole 905. Since the pixel opening region 800 needs to be avoided from overlapping the via hole 911 or the via hole 905 as much as possible to improve the flatness, such an arrangement can effectively increase the aperture opening ratio of the display substrate.
In an example, b=56.8 um, c=8.1 um, c/b=0.143, d=2.9 um, e=14.1 um, and d/e=0.206.
In another example, b=33.2 um, c=5.1 um, c/b=0.154, d=3.1 um, e=9.1 um, and d/e=0.341.
In still another example, b=99.1 um, c=26.0 um, c/b=0.262, d=12.8 um, e=22.5 um, and d/e=0.569.
For example, an average thickness of the protrusion 910a is smaller than an average thickness of a portion of the connection electrode 910 that is in contact with the top surface 704b of the connection electrode 704.
For example, for each sub-pixel, the protrusion 910a is located between the reset voltage line 760/780 connected to the sub-pixel and the connection electrode 708; that is, an orthographic projection of the protrusion 910a on the base substrate 100 is located between the orthographic projection of the reset voltage line 760/780 on the base substrate and the orthographic projection of the connection electrode 708 on the base substrate. Since the first power voltage VDD is loaded onto the connection electrode 708, such an arrangement is conducive to reducing the signal interference between the reset voltage line 760/780 and the connection electrode 708.
With reference to
For example, as shown in
At least one embodiment of the present disclosure further provides a display panel including any display substrate 20 described above. For example, the display panel is an OLED display panel, and correspondingly, the display substrate 20 included therein is an OLED display substrate. The display substrate 20 may include or not include a light emitting element. In other words, the light emitting element may be formed on the panel after the display substrate 20 is completed. In the case in which the display substrate 20 itself includes no light emitting element, the display panel provided in the embodiments of the present disclosure further includes a light emitting element in addition to the display substrate 20.
As shown in
At least one embodiment of the present disclosure further provides a touch display panel including any display substrate 20 described above. The touch display panel provided by at least one embodiment of the present disclosure will be described below exemplarily with reference to
As shown in
As shown in
In the direction perpendicular to the base substrate, the protrusion of the second conductive structure and the touch electrode in the display substrate do not overlap. That is, an orthographic projection of the protrusion (e.g., the protrusion 314a in
For example, in the direction of the base substrate, the first conductive structure (e.g., the connection electrode 232 in
At least one embodiment of the present disclosure further provides a display device 40. As shown in
What have been described above merely are specific implementations of the present disclosure, and the protection scope of the present disclosure is not limited thereto. The protection scope of the present disclosure should be based on the protection scope of the claims.
Number | Date | Country | Kind |
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202111220749.3 | Oct 2021 | CN | national |
Filing Document | Filing Date | Country | Kind |
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PCT/CN2022/126073 | 10/19/2022 | WO |