This application claims priority to the Chinese Patent Application No. 201911180003.7 filed on Nov. 26, 2019, the content of which is incorporated herein by reference in its entirety.
The present disclosure relates to a field of display technology, and in particular to a display substrate, a display panel including the display substrate, and an electronic device including the display substrate or the display panel.
OLED (Organic Light Emitting Diode) display panel is a very important type of display panel. It has advantages of a small weight, a small thickness and a high optical efficiency. In the OLED display panel, an existence of parasitic capacitance may cause mutual interference between adjacent circuit structures (especially various signal lines). With such mutual interference, a change in signals on some signal lines may affect parameters of other circuit structures, which may have an adverse effect on display.
The present disclosure provides a display substrate, including: a base substrate; a transistor on the base substrate, wherein the transistor includes a first gate layer; a signal line located on the base substrate and configured to transmit an electrical signal; and a conductive isolation portion located between the transistor and the signal line adjacent to the transistor in a direction parallel to the base substrate, wherein the conductive isolation portion is electrically connected with a DC source signal on the display substrate.
In some embodiments, a gate connection layer is further provided on the base substrate, the gate connection layer is electrically connected to the first gate layer, and the gate connection layer, the signal line and the conductive isolation portion are made of the same material and arranged in the same layer.
In some embodiments, the gate connection layer is located on a side of the first gate layer away from the base substrate, and an orthographic projection of the conductive isolation portion on the base substrate at least partially overlaps an orthographic projection of the first gate layer on the base substrate.
In some embodiments, a spacing area is provided between the conductive isolation portion and the signal line in the direction parallel to the base substrate, and the orthographic projection of the first gate layer on the base substrate does not overlap an orthographic projection of the spacing area on the base substrate.
In some embodiments, the gate connection layer is located on the side of the first gate layer away from the base substrate, and the orthographic projection of the conductive isolation portion on the base substrate does not overlap or at least partially overlaps the orthographic projection of the first gate layer on the base substrate.
In some embodiments, the display substrate further includes a second gate layer located between the first gate layer and the conductive isolation portion in a direction perpendicular to the base substrate, wherein the conductive isolation portion is located on the side of the first gate layer away from the base substrate.
In some embodiments, the orthographic projection of the conductive isolation portion on the base substrate at least partially overlaps an orthographic projection of the second gate layer on the base substrate.
In some embodiments, the display substrate further includes a first insulating layer located between the first gate layer and the second gate layer in the direction perpendicular to the base substrate and a second insulating layer located between the conductive isolation portion and the second gate layer in the direction perpendicular to the base substrate.
In some embodiments, the display substrate further includes a third insulating layer located between the base substrate and the first gate layer in the direction perpendicular to the base substrate.
In some embodiments, the transistor further includes an active layer located between the third insulating layer and the base substrate in the direction perpendicular to the base substrate, wherein an orthographic projection of the active layer on the base substrate at least partially overlaps the orthographic projection of the gate connection layer on the base substrate and the orthographic projection of the first gate layer on the base substrate.
In some embodiments, the DC source signal includes a circuit operating voltage source signal or a circuit common ground terminal voltage signal.
In some embodiments, the display substrate further includes a light emitting element, the light emitting element including an organic light emitting diode, wherein the transistor is a driving thin film transistor configured to drive the light emitting element to emit light.
In some embodiments, the orthographic projection of the conductive isolation portion on the base substrate includes a first extension portion extending in a first direction and a second extension portion extending in a second direction intersecting the first direction.
In some embodiments, the signal line is a data line.
The embodiments of the present disclosure further provide a display panel, including the display substrate according to any one of the embodiments described above.
The embodiments of the present disclosure further provide an electronic device, including the display substrate or the display panel according to any one of the embodiments described above.
In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or a related art, the drawings required in the description of the embodiments are briefly introduced below. Obviously, the drawings in the following description are some embodiments of the present disclosure. For those ordinary skilled in the art, other drawings may be obtained from these drawings without carrying out any inventive effort.
In order to make objectives, technical solutions and advantages of the present disclosure more apparent, the technical solutions of the present disclosure are clearly and completely described below with reference to the drawings of the embodiments of the present disclosure. Obviously, the embodiments described are only a part but not all of the embodiments of the present disclosure. Based on the embodiments of the present disclosure, all other embodiments obtained by those ordinary skilled in the art without carrying out inventive effort fall within the protection scope of the present disclosure. It should be noted that throughout the drawings, the same elements are represented by the same or similar reference numerals. In the following description, some specific embodiments are only used for descriptive purposes, and should not be construed as limiting the present disclosure. They are merely examples of the embodiments of the present disclosure. When it may cause confusion in the understanding of the present disclosure, conventional structures or configurations will be omitted. It should be noted that the shape and size of each component in the figure do not reflect the actual size and ratio, but merely illustrate the content of the embodiment of the present disclosure.
Unless otherwise defined, the technical or scientific terms used in the embodiments of the present disclosure should have the usual meanings understood by those skilled in the art. The words “first,” “second,” and the like used in the embodiments of the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different composition parts.
In addition, in the description of the embodiments of the present disclosure, the term “electrically connected” may mean that two components are electrically connected directly, or that two components are electrically connected via one or more other components. In addition, these two components may be electrically connected or coupled by wired or wireless means.
Transistors used in the embodiments of the present disclosure may all be thin film transistors or field effect transistors or other devices with the same characteristics. Since source and drain electrodes of the thin film transistor used here are symmetrical, the source and drain electrodes may be interchanged. In the following examples, the driving transistor is described as a P-type thin film transistor, and the other transistors are of the same or different type as or from the driving transistor according to the circuit design. Similarly, in other embodiments, the driving transistor may also be shown as an N-type thin film transistor.
The inventors of the present disclosure have discovered that, in the OLED display substrate, the data line is generally close to the driving thin film transistor used to drive the pixel unit to display images, so that the data line may cause interference (or crosstalk) to an adjacent driving thin film transistor. Specifically, in a light emission phase, a gate voltage of the driving thin film transistor (DTFT) is maintained only by the storage capacitor C1, and power may be redistributed after the signal on the data line jumps. According to the principle of conservation of charge, the gate voltage (Vg) of the DTFT is stabilized at a voltage value after the power is redistributed. This voltage value has a deviation of ΔVg from an initial value before the signal on the data line jumps, which may result in a change in the gate voltage of the DTFT. Such a change may cause a difference in display brightness of the display panel.
In order to solve the above problem, the embodiments of the present disclosure provide a display substrate 100. As shown in
In some embodiments, a gate connection layer 22 may be further provided on the base substrate 10. The gate connection layer 22 is electrically connected to the first gate layer 21. The gate connection layer 22, the signal line 30 and the conductive isolation portion 40 are made of the same material and arranged in the same layer. The gate connection layer 22 may be used to electrically connect the first gate layer 21 with wires or other circuit devices (such as other transistors). In some embodiments, the gate connection layer 22 may be made of the same material and arranged in the same layer as a source electrode and a drain electrode of the transistor 40. However, the embodiments of the present disclosure are not limited thereto, and the source electrode and the drain electrode of the transistor 40 may also be arranged, for example, in a different layer from the gate connection layer 22. For example, one or both of the source electrode and the drain electrode of the transistor 40 is arranged in the same layer as the active layer 24 of the transistor 40.
For clarity of the structure,
In order to explain a function of the conductive isolation portion 40 more clearly, the present disclosure provides a structure of a display substrate 100′ shown in
After the conductive isolation portion 40 is provided, as shown in
This design does not increase a complexity of the display substrate manufacturing process and mask manufacturing, may lessen a longitudinal crosstalk on the display substrate (interference on the transistor from the adjacent signal line, such as the data line), and is especially suitable for a flexible display that does not require a high resolution.
In some embodiments, the gate connection layer 22, the signal line 30 and the conductive isolation portion 40 may be made of the same material and arranged in the same layer. On the one hand, the manufacturing process may be simplified. On the other hand, since a conductive layer where the gate connection layer 22 and the signal line 30 are located usually has a large thickness, for example, a thickness of 7500 angstroms, the signal line 30 may be better isolated from the gate connection layer 22 and the first gate layer 21 of the transistor 20. Therefore, arranging the conductive isolation portion 40 in the same layer as the gate connection layer 22 and the signal line 30 is beneficial to ensure the thickness of the conductive isolation portion 40 so as to better resist the interference.
In some embodiments, as shown in
In some embodiments, a spacing area 31 is provided between the conductive isolation portion 40 and the signal line 30 in the direction parallel to the base substrate (for example, the x-direction), and the orthographic projection of the first gate layer 21 on the base substrate 10 does not overlap an orthographic projection of the spacing area 31 on the base substrate 10. As shown in
In some embodiments, the orthographic projection of the first gate layer 21 on the substrate 10 may not overlap the orthographic projection of the spacing area 31 on the substrate 10, and the orthographic projection of the conductive isolation portion 40 on the base substrate 10 may not overlap or at least partially overlaps the orthographic projection of the first gate layer 21 on the base substrate 10.
In some embodiments, the display substrate may further includes a second gate layer 23 located between the first gate layer 21 and the conductive isolation portion 40 in a direction perpendicular to the base substrate. The conductive isolation portion 40 may be located on a side of the first gate layer 21 away from the base substrate 10. This is also advantageous for the conductive isolation portion 40 to isolate the first gate layer 21 from the signal line 30. In the embodiments of the present disclosure, the first gate layer 21 may be used, for example, to form the gate electrode of the transistor on the display substrate, and the second gate layer 23 may be used, for example, to form the storage capacitor on the display substrate, such as the storage capacitor C1 shown in
In some embodiments, the orthographic projection of the conductive isolation portion 40 on the base substrate 10 at least partially overlaps an orthographic projection of the second gate layer 23 on the base substrate 10.
In some embodiments, as shown in
In the embodiments of the present disclosure, the DC source signal electrically connected with the conductive isolation portion 40 may include, for example, a circuit operating voltage source signal (VDD) or a circuit common ground terminal voltage signal (VSS). For example, a suitable DC source signal to be electrically connected with the conductive isolation portion 40 may be selected according to an arrangement position of the circuit operating voltage source signal and the circuit common ground terminal voltage signal. For example, in the embodiment of
In the embodiments of the present disclosure, the display substrate may include a light emitting element D1 such as an organic light emitting diode. As an example, the transistor 20 may be a driving thin film transistor for driving the light emitting element D1 to emit light.
In some embodiments, the conductive isolation portion 40 may be an isolation line. For example, as shown in
The embodiments of the present disclosure further provide a display panel, including the display substrate 100 as described in any one of the embodiments described above. Although the OLED display substrate is illustrated by way of example in describing the embodiments of the present disclosure, those skilled in the art should understand that the embodiments of the present disclosure are not limited thereto. For example, a technical concept of the present disclosure may also be used for other types of display panels.
The embodiments of the present disclosure further provide an electronic device, which may include the display substrate or the display panel according to any one of the embodiments described above. The electronic device in the embodiments of the present disclosure may be any product or component with a display function, such as electronic paper, a mobile phone, a tablet computer, a television, a notebook computer, a digital photo frame, a navigator, and so on.
Unless there are technical obstacles or contradictions, the various embodiments of the present disclosure described above may be freely combined to form additional embodiments, and these additional embodiments are all within the protection scope of the present disclosure.
Although the present disclosure is described with reference to the drawings, the embodiments disclosed in the drawings are for illustrative purposes only and are not to be construed as limiting the present disclosure.
Although the present disclosure has been described with reference to several typical embodiments, it should be understood that the terms used are illustrative and exemplary rather than restrictive. Since the present disclosure may be implemented in various forms without departing from the spirit or essence of the present disclosure, it should be understood that the embodiments described above are not limited to any of the foregoing details, but should be interpreted broadly within the spirit and scope defined by the appended claims. Therefore, all changes and modifications falling within the scope of the claims or their equivalents shall be covered by the appended claims.
Number | Date | Country | Kind |
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201911180003.7 | Nov 2019 | CN | national |
Filing Document | Filing Date | Country | Kind |
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PCT/CN2020/130091 | 11/19/2020 | WO | 00 |