This application claims priority to Chinese Patent Application No. 202011150238.4 filed in China on Oct. 23, 2020, the entire contents of which are hereby incorporated by reference.
The present disclosure relates to the technical field of display, and more particularly, to a display substrate, a method for manufacturing the same, and a display device.
In an Organic Light-Emitting Diode (OLED) display substrate using a top gate thin film transistor, the distance between the active layer and the gate electrode of the thin film transistor is relatively small and is easily affected by the electrostatic discharge (ESD) of the subsequent process, resulting in electrostatic breakdown of the insulating layer between the active layer and the gate electrode, and short-circuit between the active layer and the gate electrode, which adversely affects the yield of OLED display substrates.
The technical problem to be solved by the present disclosure is to provide a display substrate, a method for manufacturing the same, and a display device, which can improve the yield of OLED display substrates.
In order to solve the above technical problem, the embodiments of the present disclosure provide the following technical solutions.
In an aspect, a display substrate is provided, including: a base substrate; a thin film transistor on the base substrate, the thin film transistor including an active layer and a gate electrode on one side of the active layer away from the base substrate, an orthographic projection of the gate electrode on the base substrate at least partially overlapping with an orthographic projection of the active layer on the base substrate; and a conductive pattern arranged on a layer different from the gate electrode, the conductive pattern and the gate electrode being separated by an insulating layer, the orthographic projection of the gate electrode on the base substrate at least partially overlapping with an orthographic projection of the conductive pattern on the base substrate.
In some embodiments, the conductive pattern is connected to the gate electrode.
In some embodiments, the display substrate further includes a gate insulating layer between the gate electrode and the active layer, the conductive pattern being located on one side of the active layer facing the base substrate; the orthographic projection of the gate electrode on the base substrate falling within an orthographic projection of the gate insulating layer on the base substrate, the conductive pattern being connected to the gate electrode through a via hole penetrating the gate insulating layer; or the orthographic projection of the gate insulating layer on the base substrate falling within the orthographic projection of the gate electrode on the base substrate.
In some embodiments, the thin film transistor is a switching thin film transistor.
In some embodiments, the display substrate further includes a driving thin film transistor and a light-shielding metal pattern located at one side of the driving thin film transistor facing the base substrate, and the conductive pattern and the light-shielding metal pattern are arranged in the same layer and made of the same material.
In some embodiments, the orthographic projection of the gate electrode on the base substrate falls within an orthographic projection of the conductive pattern on the base substrate.
An embodiment of the present disclosure further provides a display device including the display substrate described above.
An embodiment of the present disclosure further provides a method for manufacturing a display substrate, including: providing a base substrate; forming a thin film transistor on the base substrate, the thin film transistor including an active layer and a gate electrode on one side of the active layer away from the base substrate, an orthographic projection of the gate electrode on the base substrate at least partially overlapping with an orthographic projection of the active layer on the base substrate; and forming a conductive pattern arranged on a layer different from the gate electrode, the conductive pattern and the gate electrode being separated by an insulating layer, the orthographic projection of the gate electrode on the base substrate at least partially overlapping with an orthographic projection of the conductive pattern on the base substrate.
In some embodiments, the forming a conductive pattern includes: forming a conductive pattern connected to the gate electrode.
In some embodiments, the display substrate further includes a driving thin film transistor and a light-shielding metal pattern located at one side of the driving thin film transistor facing the base substrate, and the forming a conductive pattern includes: forming the light-shielding metal pattern and the conductive pattern by a same patterning process.
01 base substrate
02 buffer layer
03 interlayer insulating layer
05 light-shielding metal pattern
06 active layer
07 gate insulating layer
08 gate electrode
09 source electrode
10 drain electrode
11 conductive pattern
12 via hole
13 source/drain metal layer
In order that the technical problems, technical solutions, and advantages to be solved by the embodiments of the present disclosure will become more apparent, a detailed description will be given below with reference to the accompanying drawings and specific embodiments.
The embodiments of the present disclosure provide a display substrate, a method for manufacturing the same, and a display device, which can improve the yield of OLED display substrates.
An embodiment of the present disclosure provides a display substrate, including: a base substrate; a thin film transistor on the base substrate, the thin film transistor including an active layer and a gate electrode on one side of the active layer away from the base substrate, an orthographic projection of the gate electrode on the base substrate at least partially overlapping with an orthographic projection of the active layer on the base substrate; and a conductive pattern arranged on a layer different from the gate electrode, the conductive pattern and the gate electrode being separated by an insulating layer, the orthographic projection of the gate electrode on the base substrate at least partially overlapping with an orthographic projection of the conductive pattern on the base substrate.
In this embodiment, with regard to the thin film transistor having a top gate structure, the conductive pattern is arranged on a layer different from the gate electrode of the thin film transistor, and the orthographic projection of the gate electrode on the base substrate at least partially overlaps with the orthographic projection of the conductive pattern on the based substrate, whereby the electrostatic charges accumulated on the gate electrode can be dispersed by the conductive pattern, so as to prevent excessive accumulation of electrostatic charges on the gate electrode, which in turn prevents electrostatic breakdown of the insulating layer between the active layer and the gate electrode as well as short-circuit between the active layer and the gate electrode, and improves the yield of OLED display substrates.
In some embodiments, the conductive pattern is connected to the gate electrode. In this way, the conductive pattern can directly conduct away the electrostatic charges accumulated on the gate electrode, so as to prevent excessive accumulation of electrostatic charges on the gate electrode, which in turn prevents electrostatic breakdown of the insulating layer between the active layer and the gate electrode as well as short-circuit between the active layer and the gate electrode, improving the yield of OLED display substrates.
As shown in
As shown in
In some embodiments, as shown in
In other embodiments, as shown in
As in the above-mentioned example, the conductive pattern 11 may be located on one side of the active layer 06 facing the base substrate 01, and furthermore, the conductive pattern 11 may also be located on one side of the active layer 06 away from the base substrate 01, as long as the conductive pattern 11 and the gate electrode 08 are arranged in different layers, and the orthographic projection of the conductive pattern 11 on the base substrate 01 and the orthographic projection of the gate electrode 08 on the base substrate 01 at least partially overlap, in which it is possible that the orthographic projection of the conductive pattern 11 on the base substrate 01 falls within the orthographic projection of the gate electrode 08 on the base substrate 01, and it is also possible that the orthographic projection of the gate electrode 08 on the base substrate 01 falls within the orthographic projection of the conductive pattern 11 on the base substrate 01, and it is also possible that the orthographic projection of the gate electrode 08 on the base substrate 01 partially overlaps with the orthographic projection of the conductive pattern 11 on the base substrate 01.
In some embodiments, the orthographic projection of the gate electrode 08 on the base substrate 01 falls within the orthographic projection of the conductive pattern 11 on the base substrate 01, namely, the area of the conductive pattern 11 exceeds the area of the gate electrode 08, so that the conductive pattern 11 can carry more electrostatic charges thereon, effectively dispersing the electrostatic charges accumulated on the gate electrode 08, and preventing excessive accumulation of electrostatic charges on the gate electrode 08.
When the conductive pattern 11 is located on the side of the active layer 06 facing the base substrate 01, the conductive pattern 11 may be arranged in the same layer and made of the same material as the light-shielding metal pattern 05, so that the conductive pattern 11 and the light-shielding metal pattern 05 may be formed simultaneously by one patterning process, the number of patterning processes for manufacturing the display substrate can be reduced, the processing time for manufacturing the display substrate can be saved, and the production cost of the display substrate can be reduced. Of course, the conductive pattern 11 may also be manufactured by a separate patterning process.
An embodiment of the present disclosure further provides a display device including the display substrate described above. The display device includes, but is not limited to: a radio frequency unit, a network module, an audio output unit, an input unit, a sensor, a display unit, a user input unit, an interface unit, a memory, a processor, a power supply, etc. It will be appreciated by those skilled in the art that the configuration of the display device described above is not intended to be limiting and that the display device may include more or fewer of the components described above, or some combinations of the components, or different arrangements of the components. In embodiments of the present disclosure, the display device includes, but is not limited to, a display, a cell phone, a tablet, a television, a wearable electronic device, a navigation display device, etc.
The display device may be: any product or component with a display function, such as a television, a display, a digital photo frame, a mobile phone, a tablet computer, and among others, the display device further includes a flexible circuit board, a printed circuit board and a back plane.
An embodiment of the present disclosure further provides a method for manufacturing a display substrate, including the following steps: a base substrate is provided; a thin film transistor is formed on the base substrate, the thin film transistor including an active layer and a gate electrode on one side of the active layer away from the base substrate, an orthographic projection of the gate electrode on the base substrate at least partially overlapping with an orthographic projection of the active layer on the base substrate; and a conductive pattern arranged on a layer different from the gate electrode is formed, the conductive pattern and the gate electrode being separated by an insulating layer, the orthographic projection of the gate electrode on the base substrate at least partially overlapping with an orthographic projection of the conductive pattern on the base substrate.
In this embodiment, with regard to the thin film transistor of top gate structure, the conductive pattern is arranged on a layer different from the gate electrode of the thin film transistor, and the orthographic projection of the gate electrode on the base substrate at least partially overlaps with the orthographic projection of the conductive pattern on the based substrate, whereby the electrostatic charges accumulated on the gate electrode can be dispersed by the conductive pattern, so as to prevent excessive accumulation of electrostatic charges on the gate electrode, which in turn prevents electrostatic breakdown of the insulating layer between the active layer and the gate electrode as well as short-circuit between the active layer and the gate electrode, and improves the yield of OLED display substrates.
In some embodiments, the forming a conductive pattern includes: a conductive pattern connected to the gate electrode is formed. In this way, the conductive pattern can directly conduct away the electrostatic charges accumulated on the gate electrode, so as to prevent excessive accumulation of electrostatic charges on the gate electrode, which in turn prevents electrostatic breakdown of the insulating layer between the active layer and the gate electrode and short-circuit between the active layer and the gate electrode, improving the yield of OLED display substrates.
As shown in
As shown in
In some embodiments, a method for manufacturing a thin film transistor includes: a conductive pattern 11, a buffer layer 02, an active layer 06, a gate insulating layer 07 and a gate electrode 08 are formed in sequence to obtain the thin film transistor as shown in
In this embodiment, when manufacturing the thin film transistor as shown in
In other embodiments, a method for manufacturing a thin film transistor includes the following steps: a conductive pattern 11, a buffer layer 02 and an active layer 06 are formed; a gate insulating layer 07 covering the active layer 06 is formed; then as shown in
As shown in
As in the above-mentioned example, the conductive pattern 11 may be located on one side of the active layer 06 facing the base substrate 01, and furthermore, the conductive pattern 11 may also be located on one side of the active layer 06 away from the base substrate 01, as long as the conductive pattern 11 and the gate electrode 08 are arranged in different layers, and the orthographic projection of the conductive pattern 11 on the base substrate 01 and the orthographic projection of the gate electrode 08 on the base substrate 01 at least partially overlap, in which it is possible that the orthographic projection of the conductive pattern 11 on the base substrate 01 falls within the orthographic projection of the gate electrode 08 on the base substrate 01, and it is also possible that the orthographic projection of the gate electrode 08 on the base substrate 01 falls within the orthographic projection of the conductive pattern 11 on the base substrate 01, and it is also possible that the orthographic projection of the gate electrode 08 on the base substrate 01 partially overlaps with the orthographic projection of the conductive pattern 11 on the base substrate 01.
When the conductive pattern 11 is located on the side of the active layer 06 facing the base substrate 01, the conductive pattern 11 may be arranged in the same layer and made of the same material as the light-shielding metal pattern 05, and the forming a conductive pattern includes: the light-shielding metal pattern and the conductive pattern are formed by a same patterning process. In this way, the number of patterning processes for manufacturing the display substrate can be reduced, the process time for manufacturing the display substrate can be saved, and the production cost of the display substrate can be reduced. Of course, the conductive pattern 11 may also be manufactured by a separate patterning process.
In a particular embodiment, the conductive pattern 11 is arranged in the same layer and made of the same material as the light-shielding metal pattern 05. As shown in
at step 1, as shown in
at step 2, a buffer layer is formed covering the light-shielding metal pattern 05 and the conductive pattern 11;
at step 3, as shown in
at step 4, a gate insulating layer is formed covering the active layer 06;
at step 5, as shown in
at step 6, an interlayer insulating layer is formed covering the gate electrode 08; and
at step 7, as shown in
The switching thin film transistors (T2 and T3) and the driving thin film transistor (T1) of the display substrate can be manufactured through the above-mentioned steps.
In this embodiment, with regard to the switching thin film transistor, the gate electrode 08 is connected to the conductive pattern 11 via the via hole, so that the ESD-type Short does not occur between the active layer 06 of the switching thin film transistor and the gate electrode 08, thereby effectively improving the yield of OLED display substrates.
In the various method embodiments of the present disclosure, the serial number of each step cannot be used to define the order of each step, and for a person of ordinary skill in the art, without involving any inventive effort, changes in the order of each step are also within the scope of the present disclosure.
It should be noted that the various embodiments described herein are described in a progressive manner with reference to the same or similar parts throughout the various embodiments, with each embodiment focusing on differences from the other embodiments. In particular, the embodiments are described more simply because they are substantially similar to the product embodiments, with reference to the partial description of the product embodiments.
Unless defined otherwise, technical or scientific terms used in this disclosure shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms “first”, “second”, and the like as use herein do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. The terms “comprising” or “comprises”, and the like, means that the presence of an element or item preceding the word covers the presence of the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms “connecting” or “connected” and the like are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The terms “upper”, “lower”, “left”, “right” and the like are used only to indicate relative positional relationships that may change accordingly when the absolute position of the object being described changes.
It will be understood that when an element such as a layer, film, region or substrate is referred to as being “on” or “under” another element, it can be “directly on” or “directly under” the other element or intervening elements may be present.
In the description of the embodiments above, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
While the present disclosure has been described with reference to specific embodiments thereof, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the scope of the disclosure. Accordingly, the protection sought herein is as set forth in the claims below.
Number | Date | Country | Kind |
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202011150238.4 | Oct 2020 | CN | national |
Filing Document | Filing Date | Country | Kind |
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PCT/CN2021/117988 | 9/13/2021 | WO |