1. The Field of the Invention
The present invention generally relates to semiconductor laser devices. More particularly, the present invention relates to a distributed feedback laser device having a structure that improves both manufacturing yield and operating performance of the laser device.
2. The Related Technology
Semiconductor lasers are currently used in a variety of technologies and applications, including optical communications networks. One type of semiconductor laser is the distributed feedback (DFB) laser. The DFB laser produces a stream of coherent, monochromatic light by stimulating photon emission from a solid state material. DFB lasers are commonly used in optical transmitters, which are responsible for modulating electrical signals into optical signals for transmission via an optical communication network.
Generally, a DFB laser includes a positively or negatively doped bottom layer or substrate, and a top layer that is oppositely doped with respect to the bottom layer. An active region, bounded by confinement regions, is included at the junction of the two layers. These structures together form the laser body. A coherent stream of light that is produced in the active region of the DFB laser can be emitted through either longitudinal end, or facet, of the laser body. One facet is typically coated with a high reflective material that redirects photons produced in the active region toward the other facet in order to maximize the emission of coherent light from that facet end.
A grating is included in either the top or bottom layer to assist in producing a coherent photon beam. For example, the grating is typically produced in the top layer of the DFB laser body by depositing a first p-doped top layer having a first index of refraction atop the active region, then etching evenly spaced grooves into the first top layer to form a tooth and gap cross sectional grating structure along the length of the grating. A second p-doped top layer having a second index of refraction is deposited atop the first top layer such that it covers and fills in the grating structure. During operation of the DFB laser, the tooth and gap structure of the grating, which is overlapped by optical field patterns created in the active region, provides reflective surfaces that couple both forward and backward propagating coherent light waves that are produced in the active region of the laser. Thus, the grating provides feedback, thereby allowing the active region to support coherent light wave oscillation. This feedback occurs along the length of the grating, hence the name of distributed feedback laser. After reflection is complete, the amplified light waves are then output via the output end facet as a coherent light signal. DFB lasers are typically known as single mode devices as they produce light signals at one of several distinct wavelengths, such as 1,310 nm or 1,550 nm. Such light signals are appropriate for use in transmitting information over great distances via an optical communications network.
DFB lasers as described above are typically mass produced on semiconductor wafers. Many DFB laser devices can be formed on a single wafer. After fabrication, the DFB lasers are separated from one another by a cleaving process, which cuts each device from the wafer. This cleaving process creates each end facet of the DFB device body. Unfortunately, limitations inherent in the cleaving process do not allow the laser device to be cut such that a precisely desired distance is established between the end facet and the nearest adjacent grating tooth.
The inherent variability of the distance between the end facet and the adjacent grating tooth created as a result of cleaving can cause several problems. First, the end facet, especially an end facet that is coated with a high reflective coating, may be disposed adjacent the nearest grating tooth such that the laser during operation will exhibit poor sidemode suppression, which in turn results in undesired optical frequencies being amplified within the laser device. These undesired optical frequencies can spoil the monochromatic nature of the DFB laser output and result in reduced performance for the apparatus in which the laser device is disposed.
Other problems that can arise from the arbitrary cleaving process include an increased incidence of chirp and low power output from the DFB laser device. Chirp, or the drifting of the optical output wavelength over time, is magnified by improper distances between the grating and the high-reflective end facet caused by the cleaving process. Similarly, low power output is evidence of less-than-ideal cleaving of the DFB laser device.
If one or more of the above-described problems is detected in a particular DFB laser device after manufacture and testing, it often must be discarded, thereby lowering the yield of acceptable DFB laser devices that are produced from a wafer. In some cases, the percentage of rejected devices suffering from any of the above problems can exceed 50% per wafer.
Attempts to mitigate the effects of low precision cleaving have involved the addition of one or more quarter phase shifts in the grating. However, the typical DFB grating has a continuous pattern over the entire wafer. This continuous pattern allows for the lithography to be simple. Yet, the installation of one or more quarter phase shifts requires the use of a special lithography apparatus. Additionally, special techniques are required in order to add such phase shifts. These special requirements necessarily increase the cost of production of each DFB device.
In light of the above, it would be desirable to enable the production of DFB laser devices where the yield per wafer is substantially increased. Further, a need exists for the DFB laser to exhibit good sidemode suppression while limiting chirp and output power loss. Moreover, such a solution should be simply implemented, thereby limiting production cost increases.
Briefly summarized, embodiments of the present invention are directed to a DFB laser device that overcomes the problems created by imprecise cleaving operations performed on DFB devices during their manufacture. Specifically, exemplary embodiments of the invention are concerned with a DFB laser having a differential grating configuration suitable for high yield manufacture and desirable operating characteristics, such as good sidemode suppression, low chirp, and controlled reflectivity and optical emission.
One exemplary DFB laser includes a body that has first and second end facets. The DFB laser is implemented in a stack configuration that includes an active region interposed between a first top layer and a substrate. A second top layer is disposed on the first top layer and has an index of refraction different from that of the first top layer. Additionally, a grating is defined in one of the top layers and extends from the first end facet to the second end facet. The grating includes a tooth/gap structure whose configuration varies between the first end facet and the second end facet. Finally, an antireflective (AR) coating is disposed on the first end facet and on the second end facet.
These and other aspects of exemplary embodiments of the invention will become more fully apparent from the following description and appended claims.
To further clarify the above and other advantages and features of the present invention, a more particular description of the invention will be rendered by reference to specific embodiments thereof that are illustrated in the appended drawings. It is appreciated that these drawings depict only typical embodiments of the invention and are therefore not to be considered limiting of its scope. The invention will be described and explained with additional specificity and detail through the use of the accompanying drawings in which:
Reference will now be made to figures wherein like structures will be provided with like reference designations. It is understood that the drawings are diagrammatic and schematic representations of presently preferred embodiments of the invention, and are not limiting of the present invention nor are they necessarily drawn to scale.
Reference is first made to
Reference is now made to
As mentioned, the grating 22 is disposed on a top surface of the first top layer 20. In greater detail, the grating 22 comprises a periodic series of closely-spaced grooves that are etched or otherwise defined in the first top layer 20. As will be seen, the grooves, when seen in cross section, define a series of teeth 34 protruding from the first top layer 20, and gaps 36 between adjacent teeth. The gaps 36 are filled with the second top layer 24 such that continuous contact is established between the first top layer 20 and the second top layer. Definition of the grating 22 on the first top layer 20 can be accomplished using known grating techniques, including electron beam lithography.
Though both the first top layer 20 and second top layer 24 are similarly doped, each has a distinct index of refraction with respect to one another. As seen in
As already described, both the first and second end facets 28 and 30 are coated with AR coating 32. By making each end facet light transmissive via the AR coating 32, problems that otherwise arise with respect to the imprecise distance between a respective end facet and the last tooth 34 adjacent thereto is eliminated. In other words, lightwaves that would otherwise reflect off the high reflective end facet (as in the prior art) that is potentially not properly positioned with respect to adjacent teeth 34 of the grating 22 are not, in fact, reflected to undesirably interact with the coherent light waves within the laser device, but are instead allowed to pass through the anti-reflective facet and exit the device. In this way, any problems normally created as a result of the inherent randomness in the cleaving process that defines the end facets 28 and 30 of the DFB device 10 are eliminated by making each end facet anti-reflective via the AR coating 32. This in turn improves the yield of DFB laser devices from a given wafer while improving the sidemode suppression characteristics of each such device.
Notwithstanding the improvements in light emission integrity made possible by the above AR-coated end facets 28 and 30, this by itself is insufficient to optimize coherent light emission from the DFB laser 10. Without further modification, a laser device having AR-coated end facets will emit approximately one-half of its coherent light through either facet. This results in a significant waste of light emission.
To alleviate the above situation, the grating 22 is modified according to principles taught according to the present invention so as to direct the majority of coherent light emission through only one of the end facets. This is accomplished by anisotropically altering the physical configuration of the grating 22 as a function of position along the grating length. For example,
Because of the non-uniform grating structure along the length of the grating 22, the reflectivity per unit length of the grating, or kappa (“κ”), which is related to the particular configuration of the grating, is also non-uniform along the grating length. In the present embodiment, κ is high on the uniform first grating half 22A, and relatively lower on the second grating half 22B. Because κ is directly related to the number of times a light wave will be reflected from the surfaces of the grating teeth, a lower κ number associated with the second grating half 22B indicates that light waves will be reflected by the grating less than those waves traveling through the first grating half 22A, which possesses a higher κ value. This is so because of the particular tooth and gap structure of each grating half 22A and 22B. In the first grating half 22A, for instance, a propagating light wave created in the active region 16 will encounter a tooth/gap interface, and thus a reflective opportunity, at every interval “a,” corresponding to the repetitive period of the teeth 34 and gaps 36. On the other hand, a light wave propagating through the second order structure of the second grating half 22B encounters a tooth/gap interface only half as many times as in first half 22A. Thus the light wave is reflected fewer times, which in turn increases the number of light signals that are able to progress to and pass through the second end facet 30. Correspondingly, because a light signal passing though the higher κ value first grating half 22A encounters more reflective opportunities, relatively fewer signals are able to reach and pass through the first end facet 28. Consequently, a substantial majority of light waves pass through the second end facet 30 when the DFB laser 10 is configured with a grating as shown in
In addition to the second order tooth and gap configuration shown in the second grating half 22B, the grating could be modified to alternatively include a third, fourth, or higher order tooth and gap configuration, if desired. For instance, in a third order configuration, every third tooth is missing from the grating structure. Such grating configurations can be designed so as to achieve the desired reduction or increase in the κ value for the particular grating portion involved.
It is noted that the bifurcated grating structure in
In a similar manner to the previous embodiment, the grating configuration shown in
The differences in width between the teeth 34A′ and 34B′ in
During operation of the DFB laser 10, the grating 22 shown in
It should be noted that in each of the embodiments depicted in
It should also be noted that the designation of a particular end facet for transmission of the majority of coherent light waves is not limited to that described in the accompanying figures. The DFB laser 10 could be alternatively configured such that the majority of coherent light waves exit to the left through the first end facet 28.
It is appreciated that the shape of the teeth 34 in the various embodiments discussed herein can also vary from that depicted. For instance, instead of a square shape, the teeth could have rounded tops or comprise triangular shapes. Notwithstanding the shape of the grating teeth, the present invention can be practiced as described herein.
Reference is now made to
Reference is now made to
In light of the present embodiment, it is generally appreciated that the teachings of the various embodiments as disclosed herein can be combined to produce grating configurations not explicitly illustrated here. For example,
If desired, it is also possible for a phase shift, such as a quarter wavelength phase shift, to be added to the grating structure to further enhance coherent light output from the DFB laser. Such a phase shift can be added at any appropriate location along the grating length, such as near either end facet, or at the mid-point.
Finally, it is noted that, though the gratings discussed herein have been shown as primarily disposed above the active region, it is also possible to dispose a grating made in accordance with the principles taught herein under the active region, such as in the laser substrate.
The present invention may be embodied in other specific forms without departing from its spirit or essential characteristics. The described embodiments are to be considered in all respects only as illustrative, not restrictive. The scope of the invention is, therefore, indicated by the appended claims rather than by the foregoing description. All changes that come within the meaning and range of equivalency of the claims are to be embraced within their scope.
This application is a divisional, and claims the benefit, of U.S. patent application Ser. No. 10/284,128, entitled DISTRIBUTED FEEDBACK LASER HAVING A DIFFERENTIAL GRATING, filed Oct. 30, 2002, incorporated herein in its entirety by this reference.
Number | Date | Country | |
---|---|---|---|
Parent | 10284128 | Oct 2002 | US |
Child | 11021320 | Dec 2004 | US |