Claims
- 1. A process for making a densified silicon nitride article comprising:
- Step 1--dispersing silicon nitride particles in a dispersion reagent to form a silicon nitride slurry;
- Step 2--adding a solution of sintering additives to said silicon nitride slurry to form a homogeneous slurry having a pH less than 7;
- Step 3--drying the product from step 2 to form a dried powder having an essentially uniform coating of said sintering additives on said silicon nitride particles;
- Step 4--converting said sintering additives of the product from step 3 to their corresponding oxides;
- Step 5--forming a silicon nitride article from the product of step 4; and
- Step 6--pressureless sintering the product from step 5 at a temperature less than 1700.degree. C. to form a densified silicon nitride article having a density greater than 98 percent of theoretical density.
- 2. A process in accordance with claim 1 wherein said dispersion agent comprises a solution having a high dielectric constant.
- 3. A process in accordance with claim 1 wherein said dispersing comprises wet-ball milling.
- 4. A process in accordance with claim 1 wherein said forming comprises pressing at 20,000 to 50,000 psig.
- 5. A process for making a densified silicton nitride article comprising
- Step 1--dispersing silicon nitride particles in a dispersion reagent to form a silicon nitride slurry;
- Step 2--adding a solution of sintering additives to said silicon nitride slurry to form a homogeneous slurry having a pH less than 7;
- Step 3--drying the product from step 2 to form a dried powder having an essentially uniform coating of said sintering additives on said silicon nitride particles;
- Step 4--Converting said sintering additives of the product from step 3 to their corresponding oxides;
- Step 5--forming a silicon nitride articles from the product of step 4; and
- Step 6--pressureless sintering the product from Step 5 at a temperature equal to or less than 1735.degree. C. in nitrogen to form a densified silicon nitride article having a density greater than 99 percent of theoetical density.
- 6. A process in accordance with claim 1 wherein said sintering additives are selected from the group consisting of soluble salts of yttrium, aluminum, magnesium, lanthanum, cerium, hafnium, zirconium, rare earths, and combinations thereof.
- 7. A process in accordance with claim 6 wherein said soluble salts comprise nitrates.
- 8. A process in accordance with claim 1 wherein said forming comprises isostatic pressing.
- 9. A process in accordance with claim 1 wherein said forming comprises slip casting.
- 10. A process in accordance with claim 5 wherein said temperature comprises a temperature equal to or less than 1860.degree. C.
- 11. A process in accordance with claim 1 wherein said dispersion agent comprises a one normal ammonium hydroxide solution containing ammonium citrate and ammonium acetate.
Parent Case Info
This is a continuation of co-pending application Ser. No. 761,457, filed on Aug. 1, 1985, now abandoned.
US Referenced Citations (8)
Foreign Referenced Citations (2)
Number |
Date |
Country |
59-195574 |
Nov 1984 |
JPX |
2011952 |
Jul 1979 |
GBX |
Non-Patent Literature Citations (2)
Entry |
Shaw, T. M. and Pethica B., The Preparation and Sintering of Homogeneous Silicon Nitride Green Compacts, Jun. 1985 |
Szweda, A.; Hendry, A.; Jack, K. H. "The Preparation of Silicon Nitride from Silica by Sol-Gel Processing;" Proc. Br. Ceram. Soc., 1981, 31, No. Spec Ceram. 7 pp. 107-118. |
Continuations (1)
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Number |
Date |
Country |
Parent |
761457 |
Aug 1985 |
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