Claims
- 1. A method of preparing a solution for forming a doped gel monolith, the method comprising:
providing a first substance comprising a metal alkoxide; providing a second substance comprising a catalyst; providing a chemical comprised of a dopant; forming a solution comprising the dopant, said forming comprising mixing the first substance and the second substance together; and cooling the solution to a mixture temperature which is at or below zero degrees Celsius, wherein the solution has a significantly longer gelation time at the mixture temperature than at room temperature.
- 2. The method of claim 1, wherein forming the solution comprises mixing the first substance and the chemical together thereby forming a doped first substance and mixing the second substance with the doped first substance.
- 3. The method of claim 1, wherein forming the solution comprises mixing the second substance and the chemical together thereby forming a doped second substance and mixing the first substance with the doped second substance.
- 4. The method of claim 1, wherein forming the solution comprises mixing the chemical with the first and second substances.
- 5. The method of claim 4, wherein mixing the chemical with the first and second substances occurs concurrently with mixing the first and second substances together.
- 6. The method of claim 4, wherein mixing the chemical with the first and second substances occurs at least 5 minutes prior to completion of gelation of the mixed first and second substances.
- 7. The method of claim 1, wherein cooling the solution comprises cooling the first substance.
- 8. The method of claim 1, wherein cooling the solution comprises cooling the second substance.
- 9. The method of claim 1, wherein cooling the solution comprises cooling the chemical comprised of the dopant.
- 10. The method of claim 1, wherein the metal alkoxide comprises tetramethylorthosilicate (TMOS).
- 11. The method of claim 1, wherein the metal alkoxide comprises tetramethylorthosilicate (TEOS).
- 12. The method of claim 1, wherein the catalyst comprises the dopant.
- 13. The method of claim 1, wherein the chemical comprised of the dopant comprises a fluorine-containing chemical.
- 14. The method of claim 13, wherein the fluorine-containing chemical comprises a material selected from the group consisting of: triethoxyfluorosilane, trimethoxyfluorosilane, tripropyloxyfluorosilane, HF, LiF, and AlF3.
- 15. The method of claim 13, wherein the solution comprises at least 1 mole % of the fluorine-containing chemical.
- 16. The method of claim 13, wherein the solution comprises at least 4 mole % of the fluorine-containing chemical.
- 17. The method of claim 13, wherein the solution comprises at least 8 mole % of the fluorine-containing chemical.
- 18. The method of claim 13, wherein the fluorine-containing chemical comprises a fluorine-containing alkoxide which undergoes a decomposition reaction, and the solution further comprises HF, thereby impeding the decomposition reaction.
- 19. The method of claim 1, wherein the chemical comprised of the dopant comprises a germanium-containing alkoxide.
- 20. The method of claim 19, wherein the germanium-containing alkoxide comprises tetraethoxygermane (TEOG).
- 21. The method of claim 19, wherein the solution comprises at least 1 mole % of the germanium-containing alkoxide.
- 22. The method of claim 1, wherein the chemical comprised of the dopant comprises a boron-containing chemical.
- 23. The method of claim 22, wherein the boron-containing chemical comprises B(OEt)3.
- 24. The method of claim 22, wherein the solution comprises at least approximately 1 mole % of the boron-containing chemical.
- 25. The method of claim 1, wherein the chemical comprised of the dopant comprises a phosphorous-containing chemical.
- 26. The method of claim 25, wherein the phosphorous-containing chemical comprises PO(OEt)3.
- 27. The method of claim 25, wherein the solution comprises at least approximately 1 mole % of the phosphorous-containing chemical.
- 28. The method of claim 1, wherein the chemical comprised of the dopant comprises a tin-containing chemical.
- 29. The method of claim 28, wherein the tin-containing chemical comprises a material selected from the group consisting of: SnCl4, Sn(OPr)4, and Sn(But)2(OOCCH3)2.
- 30. The method of claim 28, wherein the solution comprises at least approximately 0.1 mole % of the tin-containing chemical.
- 31. The method of claim 1, wherein the first substance further comprises a solvent.
- 32. The method of claim 31, wherein the solvent comprises alcohol.
- 33. The method of claim 1, wherein the catalyst comprises hydrofluoric acid.
- 34. The method of claim 33, wherein the chemical comprised of the dopant comprises hydrofluoric acid.
- 35. The method of claim 1, wherein the second substance further comprises water.
- 36. A method of forming a doped gel monolith, the method comprising:
preparing a solution using the method of claim 1; and allowing the solution to gel, thereby forming the doped gel monolith.
- 37. The method of claim 36, wherein the doped gel monolith is fluorine-doped.
- 38. The method of claim 37, wherein the doped gel monolith has more than approximately 4 wt. % fluorine.
- 39. The method of claim 37, wherein the doped gel monolith has between approximately 6 wt. % fluorine and approximately 10 wt. % fluorine.
- 40. A doped gel monolith formed by the method of claim 36.
- 41. A method of forming a doped glass monolith, the method comprising:
forming a doped gel monolith using the method of claim 36;drying the doped gel monolith, and consolidating the doped gel monolith, thereby forming the doped glass monolith.
- 42. The method of claim 41, wherein the doped glass monolith comprises fluorine-doped silica glass.
- 43. The method of claim 42, wherein consolidating the doped gel monolith comprises exposing the doped gel monolith to a fluorine-containing gas.
- 44. The method of claim 43, wherein the fluorine-containing gas comprises SiF4 or SF6.
- 45. The method of claim 42, wherein the refractive index of the fluorine-doped silica glass for 1550 nm light is at least approximately 0.3% lower than the refractive index of pure silica glass.
- 46. The method of claim 42, wherein the refractive index of the fluorine-doped silica glass for 1550 nm light is between approximately 0.3% and approximately 3% lower than the refractive index of pure silica glass.
- 47. The method of claim 42, wherein the refractive index of the fluorine-doped silica glass for 1550 nm light is between approximately 1% and 3% lower than the refractive index of pure silica glass.
- 48. A method of processing a solution comprising a catalyst, water, metal alkoxide, and a chemical comprised of a dopant, the method comprising extending a gelation time of the solution by keeping the solution at a predetermined temperature at or below zero degrees Celsius.
- 49. A component of an optical preform comprised of a plurality of material components including a core material and a cladding material, the component manufactured by the process of:
providing a first substance comprising a metal alkoxide; providing a second substance comprising a catalyst; providing a chemical comprised of a dopant; forming a solution comprising the dopant, said forming comprising mixing the first substance and the second substance together; and cooling the solution to a mixture temperature at or below zero degrees Celsius, wherein the solution has a significantly longer gelation time at the mixture temperature than at room temperature.
- 50. A method of forming a doped gel monolith, the method comprising:
providing a first substance comprising a metal alkoxide; providing a second substance comprising a catalyst; providing a chemical comprised of a dopant, said chemical being substantially free of fluorine-containing alkoxide; forming a solution substantially free of fluorine-containing alkoxide and comprising the dopant, said forming comprising mixing the first substance and the second substance together; cooling the solution to a mixture temperature substantially below room temperature, wherein the solution has a significantly longer gelation time at the mixture temperature than at room temperature; and allowing the solution to gel, thereby forming the doped gel monolith.
- 51. The method of claim 50, wherein forming the solution comprises mixing the first substance and the chemical together thereby forming a doped first substance and mixing the second substance with the doped first substance.
- 52. The method of claim 50, wherein forming the solution comprises mixing the second substance and the chemical together thereby forming a doped second substance and mixing the first substance with the doped second substance.
- 53. The method of claim 50, wherein forming the solution comprises mixing the chemical with the first and second substances.
- 54. The method of claim 53, wherein mixing the chemical with the first and second substances occurs concurrently with mixing the first and second substances together.
- 55. The method of claim 53, wherein mixing the chemical with the first and second substances occurs at least 5 minutes prior to completion of gelation of the mixed first and second substances.
- 56. The method of claim 50, wherein cooling the solution comprises cooling the first substance.
- 57. The method of claim 50, wherein cooling the solution comprises cooling the second substance.
- 58. The method of claim 50, wherein cooling the solution comprises cooling the chemical comprised of the dopant.
- 59. The method of claim 50, wherein the metal alkoxide comprises tetramethylorthosilicate (TMOS).
- 60. The method of claim 50, wherein the metal alkoxide comprises tetraethylorthosilicate (TEOS).
- 61. The method of claim 50, wherein the chemical comprised of the dopant comprises a germanium-containing alkoxide.
- 62. The method of claim 61, wherein the germanium-containing alkoxide comprises tetraethoxygermane (TEOG).
- 63. The method of claim 50, wherein the chemical comprised of the dopant comprises a boron-containing chemical.
- 64. The method of claim 63, wherein the boron-containing chemical comprises B(OEt)3.
- 65. The method of claim 63, wherein the solution comprises at least approximately 1 mole % of the boron-containing chemical.
- 66. The method of claim 50, wherein the chemical comprised of the dopant comprises a phosphorous-containing chemical.
- 67. The method of claim 66, wherein the phosphorous-containing chemical comprises PO(OEt)3.
- 68. The method of claim 66, wherein the solution comprises at least approximately 1 mole % of the phosphorous-containing chemical.
- 69. The method of claim 50, wherein the chemical comprised of the dopant comprises a tin-containing chemical.
- 70. The method of claim 69, wherein the tin-containing alkoxide comprises a material selected from the group consisting of: SnCl4, Sn(OPr)4, and Sn(But)2(OOCCH3)2.
- 71. A component of an optical preform comprised of a plurality of material components including a core material and a cladding material, the component manufactured by the process of:
providing a first substance comprising a metal alkoxide; providing a second substance comprising a catalyst; providing a chemical comprised of a dopant, said chemical being substantially free of fluorine-containing alkoxide; forming a solution substantially free of fluorine-containing alkoxide and comprising the dopant, said forming comprising mixing the first substance and the second substance together; cooling the solution to a mixture temperature substantially below room temperature, wherein the solution has a significantly longer gelation time at the mixture temperature than at room temperature; and allowing the solution to gel, thereby forming a gel monolith.
CLAIM OF PRIORITY
[0001] This application is a continuation-in-part of, and claims priority from, U.S. Utility Patent Application No. 10/117,921, filed Apr. 5, 2002, which is a continuation-in-part of, and claims priority from, U.S. Utility patent application Ser. No. 09/974,725, filed Oct. 9, 2001, both of which are incorporated in their entirety by reference herein.
Continuation in Parts (2)
|
Number |
Date |
Country |
Parent |
10117921 |
Apr 2002 |
US |
Child |
10215353 |
Aug 2002 |
US |
Parent |
09974725 |
Oct 2001 |
US |
Child |
10117921 |
Apr 2002 |
US |