Number | Name | Date | Kind |
---|---|---|---|
RE30384 | Kaplow et al. | Aug 1980 | |
3874952 | Woodall | Apr 1975 | |
3903427 | Pack | Sep 1975 | |
3990101 | Ettenberg et al. | Nov 1976 | |
3995303 | Nahory et al. | Nov 1976 | |
4107723 | Kamath | Aug 1978 | |
4110122 | Kaplow et al. | Aug 1978 | |
4133698 | Chiang et al. | Jan 1979 | |
4135950 | Rittner | Jan 1979 | |
4234352 | Swanson | Nov 1980 | |
4295002 | Chappell et al. | Oct 1981 | |
4320247 | Gatos et al. | Mar 1982 | |
4332974 | Fraas | Jun 1982 | |
4379944 | Borden et al. | Apr 1983 | |
4427841 | Rahilly | Jan 1984 | |
4453030 | David et al. | Jun 1984 | |
4582952 | McNeely et al. | Apr 1986 | |
4703337 | Yamazaki | Oct 1987 | |
5011550 | Konushi et al. | Apr 1991 | |
5028274 | Basol et al. | Jul 1991 | |
5030295 | Swanson et al. | Jul 1991 | |
5100480 | Hayafuji | Mar 1992 | |
5115286 | Camras et al. | May 1992 | |
5239193 | Benton et al. | Aug 1993 | |
5266125 | Rand et al. | Nov 1993 | |
5286306 | Menezes | Feb 1994 | |
5322573 | Jain et al. | Jun 1994 | |
5342451 | Virshup | Aug 1994 | |
5407491 | Freundlich et al. | Apr 1995 | |
5538564 | Kaschmitter | Jul 1996 | |
5571339 | Ringel et al. | Nov 1996 | |
5595607 | Wenham et al. | Jan 1997 | |
5602415 | Kubo et al. | Feb 1997 | |
5641362 | Meier | Jun 1997 |
Entry |
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25.5-Percent AMO Gallium Arenside Grating Solar Cell (V.G. Weizer and M.P. Godlewski) Oct., 1985 (NASA Technical Memorandum 87134). |
Monolithically Interconnected InGaAs TPV Module Development (David M. Wilt et al) 25th PVSC; May 13-17, 1996 (0-7-803-3166-4/96 IEEE). |
Effect of solar-cell junction geometry on open-circuit voltage (V.G. Weizer and M.P. Godlewski), J. Appl. Phys. 57(6), Mar. 15, 1985. |
An Optimization Study of Si Point-Contact Concentrator Solar Cells (R.A. Sinnton and R.M. Swanson) Proceedings of the 19th IEEE Photovoltaics Specialists Conference, pp. 1201-1208, May 4-8, 1987, New Orleans. |
Radiation Hardened High Efficiency Silicon Space Solar Cell (V. Garboushian et al. Jan., 1993 (Amonix, Inc.) (0-7803-1220-1/93; 1993 IEEE). |
Ion Implantation of Be in In.sub.0.53 Ga.sub.0.47 As (K. Tabatabaie-Alavi, et al.) Appl. Phys. Lett. 40(6) Mar. 15, 1982 (American Institute of Physics). |
Ion Implantation of Si in Be-implanted In.sub.0.53 Ga.sub.0.47 As (A.N.M.M. Choudhury et al.) Appl. Phys. Lett. 40(7), Apr. 1, 1982 (American Institute of Physics). |