Patent Application
20210242248
This disclosure relates to the field of display technology, and more particularly to a double-sided thin film transistor (TFT) panel, a method for manufacturing a double-sided TFT panel, and a display device.
In the field of display technology, flat panel display technologies such as liquid crystal displays (LCD) and organic light emitting diodes (OLED) display are gradually replacing cathode ray tube (CRT) displays. An OLED display has many advantages such as self-luminescence, low driving voltage, high luminous efficiency, short response time, high resolution and contrast, viewing angle close to 180°, wide operating temperature range, capabilities of flexible display and large-area full-color display, etc. The OLED display is widely recognized by the industry as the most promising display device.
An existing flexible OLED display generally includes a flexible thin film transistor (TFT) panel and an OLED device disposed on the flexible TFT panel.
In the related art, since low temperature poly-silicon (LTPS) panels are all manufactured on a single side, signal lines and drivers on the flexible TFT panel can only be arranged on one side of the flexible TFT panel. As resolution of products becomes higher, wiring will become denser. When signal lines and drivers are arranged, the flexible TFT panel does not have enough space for arrangement.
To this end, implementations provide a double-sided thin film transistor (TFT) panel, a method for manufacturing a double-sided TFT panel, and a display device.
In order to solve the above technical problem, technical solutions of implementations are as follows.
In a first aspect, a method for manufacturing a double-sided TFT panel is provided. The method includes the following. Two substrates are provided, and a TFT panel is formed on each of the two substrates (e.g., a TFT panel grows on each of the two substrates). A support membrane is attached to a side of each TFT panel away from the substrate corresponding to the TFT panel. The substrate corresponding to each TFT panel is peeled off. The double-sided TFT panel is formed, by attaching a side, from which the substrate is peeled off, of each of the two TFT panels. A conductive hole is defined on the double-sided TFT panel, where the conductive hole is used for making electrodes on the two TFT panels communicate with each other.
In a second aspect, a double-sided TFT panel is provided. The double-sided TFT panel includes two TFT panels, a drive circuit, and a conductive hole. A side of one of the two TFT panels is attached to a side of the other one of the two TFT panels. The drive circuit is disposed on any one of the two TFT panels of the double-sided TFT panel and shared with the other one of the two TFT panels of the double-sided TFT panel. The conductive hole is defined on the double-sided TFT panel, where the conductive hole is used for making electrodes on the double-sided TFT panel communicate with each other.
In a third aspect, a display device is provided. The display device includes a housing and the double-sided TFT panel described in the second aspect. The double-sided TFT panel is disposed inside the housing.
In order for a clearer and more accurate understanding of implementations, implementations will be described in detail with reference to the accompanying drawings. The accompanying drawings illustrate examples of implementations, in which the same reference numerals denote the same components. It can be understood that, a scale illustrated in the drawings is not a scale of the actual implementation of implementations, which is for illustrative purposes only and not drawn according to the original size.
At block S601, two substrates 11 are provided, and a TFT panel 1 is formed on each of the two substrates 11. As illustrated in
The substrate 11 is a copper clad laminate. Manufacturing of a single-sided printed board or a double-sided printed board includes hole processing, electroless copper plating, copper electroplating, etching, and the like which are selectively performed on the substrate 11 (that is, copper clad laminate), to obtain a required circuit pattern. As to manufacturing of another type of multilayer printed board, a thin-core copper clad laminate is used as a base, on which a conductive pattern layer and a prepreg are alternately bonded together through one-time lamination, to achieve interconnections among more than three layers of conductive patterns. The substrate 11 has three functions, which are conduction, insulation, and support. The performance, quality, processability in manufacturing, manufacturing cost, and manufacturing capability of a printed board depend largely on the material of the substrate 11.
As an example, the flexible sapphire substrate 11 can also be made of a plastic transparent material. The plastic glass material can be, but is not limited to, polyethersulfone (pes), polyacrylate (par), polyetherimide (pei), polyethylene naphthoate (pet), polyphenylene sulfide (pps), polyα-acrylate, polyimide, polycarbonate (pc), cellulose triacetate (TAC), cellulose acetate propionate (CAP), etc. If the flexible sapphire substrate 11 is required to be non-transparent, it can be made of a metal material. The metal material may be, but is not limited to, copper, aluminum, or other flexible metal materials.
Taking an LTPS TFT panel 1 as an example, the TFT panel 1 includes a drive circuit 12 disposed at one side of the substrate 11, a bonding electrode 13, a flat layer 15, an insulation layer 16, and a buffer layer 100. The buffer layer 100, the insulation layer 16, and the flat layer 15 are sequentially disposed. The drive circuit 12 is disposed between the insulation layer 16 and the flat layer 15 through a damascene process. The flat layer 15 covers a side of the drive circuit 12 away from the insulation layer 16, and a side of the flat layer 15 away from the insulation layer 16 forms a flat surface.
The drive circuit 12 may include a TFT, a data line, a scan line, etc. A gate, a source, and a drain of the TFT are mainly made of a metal material doped with a conductive semiconductor material. The metal material can be, but is not limited to, copper, aluminum, tungsten, gold, silver, etc. The conductive semiconductor material may be, but is not limited to, polysilicon. The drive circuit 12 may be, but is not limited to, a 2T1C circuit.
The flat layer 15 is made of an insulation material. The insulation material may include, but is not limited to, SiO2, Si3N4, HfO2, SiON, TiO2, TaO3, SnO2, etc.
The insulation layer 16 includes a gate insulation layer 16 and a non-gate insulation layer 16. The insulation layer 16 is made of an inorganic material. The inorganic material may be, but is not limited to, an oxide material (such as SiO2), a nitride material (such as SiN), etc.
The buffer layer 100 is laid on a side of the substrate 11, which is used to planarize the substrate 11 and on the other hand, prevent impurities or moisture from penetrating through the substrate 11. The buffer layer 100 may be made of an inorganic material. The inorganic material can be, but is not limited to, silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, titanium oxide, and the like. The buffer layer 100 can also be made of an organic material. The organic material can be, but is not limited to, polyimide, polyamide, or propylene.
At block S602, a support membrane 14 is attached to a side of each TFT panel 1 away from the substrate 11 corresponding to the TFT panel 1, as illustrated in
At block S603, the substrate 11 corresponding to each TFT panel 1 is peeled off, as illustrated in
At block S604, the double-sided TFT panel 6 is formed, by attaching a side of the one of the two TFT panels 1 to a side of the other one of the two TFT panels 1. As illustrated in
At block S605, a conductive hole 3 is defined on the double-sided TFT panel 6, where the conductive hole 3 is used for making electrodes on the two TFT panels 1 communicate with each other. As illustrated in
In some implementations, the conductive hole 3 is filled with a metal-plated material or a conductive glass material. The conductive hole 3 is used for making the electrodes on the two TFT panels 1 communicate with each other. If the conductive hole 3 is filled with a metal-plated material, the metal-plated material can be, but is not limited to, gold, silver, or copper. If the conductive hole 3 is filled with a conductive glass material, the conductive glass may include a volume conductive glass and a surface conductive layer glass. The volume conductive glass contains an alkaline oxide, a silicon oxide, and a titanium oxide. The surface conductive layer glass is manufactured by vapor-depositing a metal film (such as gold, platinum, etc., and the metal film has a thickness of less than 10 nm) on a transparent glass surface, or by spraying a metal oxide conductive film (such as tin, indium, etc.) on a heated glass surface. Therefore, a conductive glass is a glass which is low in resistance and high in conductivity.
At block S606, the support membrane 14 on the double-sided TFT panel 6 is peeled off. In other words, the support membrane 14 on each of the two TFT panels 1 is peeled off. As illustrated in
At block S607, the drive circuit 12 is disposed on any one of the TFT panel 1 of the double-sided TFT panel 6, where the drive circuit 12 is shared with the other one of the TFT panel 1 of the double-sided TFT panel 6. As illustrated in
At block S608, a light emitting component 4 is disposed on the bonding electrode 13 at each of two sides of the double-sided TFT panel 6, as illustrated in
The light emitting component 4 can be, but is not limited to, a micro light emitting diode (LED), and the size of the micro LED is in the order of micrometers. In addition, the size of the micro LED is less than 100 micrometers. The micro LED on the double-sided TFT panel 6 can emit light under the action of the drive circuit 12.
According to implementations, the TFT panel 1 is an LTPS TFT panel 1. The TFT panel 1 includes the drive circuit 12 disposed at one side of the substrate 11, a bonding electrode 13, a flat layer 15, an insulation layer 16, and a buffer layer 100. The buffer layer 100, the insulation layer 16, and the flat layer 15 are sequentially disposed. The drive circuit 12 is disposed between the insulation layer 16 and the flat layer 15 through a damascene process. The flat layer 15 covers a side of the drive circuit 12 away from the insulation layer 16, and a side of the flat layer 15 away from the insulation layer 16 forms a flat surface.
The drive circuit 12 may include a TFT, a data line, a scan line, etc. A gate, a source, and a drain of the TFT are mainly made of a metal material doped with a conductive semiconductor material. The metal material can be, but is not limited to, copper, aluminum, tungsten, gold, silver, etc. The conductive semiconductor material may be, but is not limited to, polysilicon. The drive circuit 12 may be, but is not limited to, a 2T1C circuit.
The flat layer 15 is made of an insulation material. The insulation material may include, but is not limited to, SiO2, Si3N4, HfO2, SiON, TiO2, TaO3, SnO2, etc.
The insulation layer 16 includes a gate insulation layer 16 and a non-gate insulation layer 16. The insulation layer 16 is made of an inorganic material. The inorganic material may be, but is not limited to, an oxide material (such as SiO2), a nitride material (such as SiN), etc.
The buffer layer 100 is laid on a side of the substrate 11, which is used to planarize the substrate 11 and on the other hand, prevent impurities or moisture from penetrating through the substrate 11. The buffer layer 100 may be made of an inorganic material. The inorganic material can be, but is not limited to, silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, titanium oxide, and the like. The buffer layer 100 can also be made of an organic material. The organic material can be, but is not limited to, polyimide, polyamide, or propylene.
A side of one of the two TFT panels 1 is attached to a side of the other one of the two TFT panels 1. The drive circuit 12 is disposed on any one of the TFT panel 1 of the double-sided TFT panel 6, where the drive circuit 12 is shared with the other one of the TFT panel 1 of the double-sided TFT panel 6. Signal lines and data lines of the drive circuit 12 can be distributed to both of the two TFT panels 1, which is possible to reduce arrangement of signal lines and data lines in a non-display region and on the other hand, reduce the area of the non-display region.
The conductive hole 3 is defined on the double-sided TFT panel 6, where the conductive hole 3 is used for making electrodes on the double-sided TFT panel 6 communicate with each other. The conductive hole 3 may be defined through manual drilling or electrical drilling. When only a few conductive holes 3 are required, manual drilling can be adopted. When a large number of conductive holes 3 are required, electrical drilling can be adopted.
The conductive hole 3 is filled with a metal-plated material or a conductive glass material. The conductive hole 3 is used for making the electrodes on the two TFT panels 1 communicate with each other. If the conductive hole 3 is filled with a metal-plated material, the metal-plated material can be, but is not limited to, gold, silver, or copper. If the conductive hole 3 is filled with a conductive glass material, the conductive glass may include a volume conductive glass and a surface conductive layer glass. The volume conductive glass contains an alkaline oxide, a silicon oxide, and a titanium oxide. The surface conductive layer glass is manufactured by vapor-depositing a metal film (such as gold, platinum, etc., and the metal film has a thickness of less than 10 nm) on a transparent glass surface, or by spraying a metal oxide conductive film (such as tin, indium, etc.) on a heated glass surface. Therefore, a conductive glass is a glass which is low in resistance and high in conductivity.
A side of one of the two TFT panels 1 is attached to a side of the other one of the two TFT panels 1 with an adhesive insulation material 2. The adhesive insulation material 2 may be, but is not limited to, a polyimide film. Alternatively, the adhesive insulation material 2 may also be other types of adhesive insulation materials. According to different materials of the adhesive insulation material 2, the adhesive insulation material 2 may include an ethylene-propylene rubber self-adhesive tape, an ethylene-propylene rubber and butyl rubber waterproof tape, a silica gel tape, etc. According to different functions of the adhesive insulation material 2, the adhesive insulation material 2 may include a high-pressure rubber self-adhesive tape, a low-pressure rubber self-adhesive tape, a waterproof tape, a semi-conductive tape, an electrical stress control tape, an arc-resistant silica gel tape, etc.
A light emitting component 4 is disposed on the bonding electrode 13 at each of two sides of the double-sided TFT panel 6. The light emitting component 4 can be, but is not limited to, a micro LED, and the size of the micro LED is in the order of micrometers. In addition, the size of the micro LED is less than 100 micrometers. The micro LED on the double-sided TFT panel 6 can emit light under the action of the drive circuit 12.
Apparently, those skilled in the art can make various changes and modifications to the disclosure without departing from the spirit and scope of the disclosure. In this way, if these modifications and variations fall within the scope of the claims of the disclosure and their equivalent technologies, the disclosure is also intended to include these modifications and variations.
The above are only exemplary implementations of the disclosure, which cannot limit the scope of the claims of the disclosure. Therefore, equivalent changes made according to the claims of the disclosure shall also fall within the scope of the disclosure.
This application is a continuation of International Application No. PCT/CN2019/126674, filed on Dec. 19, 2019, the entire disclosure of which is incorporated herein by reference.
| Number | Date | Country | |
|---|---|---|---|
| Parent | PCT/CN2019/126674 | Dec 2019 | US |
| Child | 17235696 | US |
