This description relates generally to circuits, and more particularly to drain-assisted supply generation circuits.
High-voltage and/or high-current applications require power electronic devices capable of efficient and effective operation at various operating conditions. In some such applications, power modules deliver power using power devices such as, metal-oxide-semiconductor field-effect transistors (MOSFETs), insulated-gate bipolar transistors (IGBTs), etc. A driver may be used to control a power device used as a power delivering device to support delivering power to a load.
For drain-assisted supply generation circuits, an example apparatus includes: a gate driver with a control output terminal, a power transistor with a gate terminal and a first current terminal, the gate terminal coupled to the control output terminal, and drain-derived supply circuitry with an output coupled to the first current terminal.
The drawings are not necessarily to scale. Generally, the same reference numbers in the drawing(s) and this description refer to the same or like parts. Although the drawings show layers and regions with clean lines and boundaries, some or all of these lines and/or boundaries may be idealized. In reality, the boundaries and/or lines may be unobservable, blended and/or irregular.
High-voltage and/or high-current applications may utilize power electronic devices capable of efficient and effective operation at various operating conditions. In some such applications, power circuitry may deliver power to a load using power devices, which may be implemented utilizing transistors. Some such transistors (such as power transistors) may include field-effect transistors (FETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), insulated-gate bipolar transistors (IGBTs), etc. A driver may be used to control a power device (such as a transistor) to achieve power delivery to a load.
Some power circuitry may include a capacitively powered and isolated driver, a transistor, and isolation capacitors. In some such power circuitry, self-induced common-mode transients may cause power interruptions of the capacitively powered and isolated driver. The power interruptions may cause improper control of the transistor. For example, when the transistor is turned off, a transmit ground and a receive ground of the power circuitry may be approximately equipotential. In some such examples, when the transistor is turned on, the receive ground may rise relative to the transmit ground. The isolation capacitors may charge with common-mode current to support the ground difference. If the common-mode current is greater than the differential-mode current, then a current drought may occur. The current drought may cause an inadequate quantity of current to be provided to the driver when the transistor is to be turned on. The driver may not be enabled when needed if the quantity of current is inadequate and, if not enabled, the driver may not turn on the transistor at a time when the transistor is to be turned on. If the driver is not enabled when needed, then the driver may achieve improper control of the transistor.
Examples described herein include example drain-derived supply circuitry as part of example isolation switch circuitry. The drain-derived supply circuitry may achieve drive control of a transistor (such as a driven transistor), which may be part of the isolation switch circuitry, during a self-induced common-mode transient. In some described examples, the drain-derived supply circuitry may cause charge (such as auxiliary charge) to be drawn from a drain of the driven transistor. The drawn charge may be provided to a power terminal of a driver, which may be part of the isolation switch circuitry. Advantageously, the drain-derived supply circuitry described herein may provide the charge to the driver to ensure that the driver has sufficient voltage to turn on (or off) the driven transistor. Advantageously, in response to the provided charge, the driver may achieve proper drive control of the driven transistor.
Example isolated switch and silicon controlled rectifier (SCR) drive circuitry 110, example relay circuitry 112, and an example control unit 114 are part of the battery electric vehicle system 102. In some examples, the isolated switch and SCR drive circuitry 110 may implement driver circuitry (such as isolated driver circuitry). In some examples, the relay circuitry 112 may implement a switch. For example, the relay circuitry 112 may implement an electromechanical switching device including a coil to be used to generate a magnetic force that mechanically operates an electric contact. The relay circuitry 112, when enabled, achieves delivery of power from the charge ports 106, 108 to the power sources 104. The relay circuitry 112, when disabled, interrupts delivery of the power from the charge ports 106, 108 to the power sources 104. The isolated switch and SCR drive circuitry 110 may control when power is provided or interrupted.
In some examples, the control unit 114 may be implemented by a micro control unit, a motor control unit (MCU), etc., to control operation of a power train (such as an electric motor) of the vehicle. In some such examples, the control unit 114 may be implemented by a controller, a hardware logic, machine readable instructions, hardware implemented state machines, and/or any combination thereof. In this example, the control unit 114 may control operation of the isolated switch circuitry 100A-100F. For example, the control unit 114 may invoke one(s) of the isolated switch circuitry 100A-100F to turn on or off. In some examples, the control unit 114 may determine isolation of the power sources 104 based on first measurements (ISOLATION CHECK) from first example sensors 116A-116B. For example, the isolation check may indicate whether the positive or negative terminal of a battery are soft-shorted to an example chassis 117 of the vehicle, which is represented by a ground reference potential. The control unit 114 may measure a first voltage VCONT+ and a second voltage VCONT− based on second measurements (VCONT MONITOR) from second example sensors 118A-118B. For example, the second measurements may indicate whether the isolated switch and SCR drive circuitry 110 is enabled or disabled. The control unit 114 may measure a third voltage at the positive polarity charge port 106 and a fourth voltage at the negative polarity charge port 108 based on third measurements (PORTV MONITORING) from third example sensors 120A-120B. For example, the third measurements may indicate whether the relay circuitry 112 is enabled or disabled. One(s) of the first sensors 116A-116B, the second sensors 118A-118B, and/or the third sensors 120A-120B may be implemented with a current sensor (such as a current transformer), a voltage sensor (such as a resistive-type sensor, a capacitor-type sensor, etc.), etc.
In the illustrated example of
In example operation, the control unit 114 may receive the first measurements, the second measurements, and/or the third measurements. The control unit 114 may determine to turn on one(s) of the isolated switch and SCR drive circuitry 110 and the relay circuitry 112 to achieve power delivery from the charge ports 106, 108 to the power sources 104. The control unit 114 may determine to turn on one(s) of the isolated switch circuitry 100A-100F to implement the isolation check, VCONT monitor, and/or PORTV monitoring functions. For example, the control unit 114 may turn on the first isolated switch circuitry 100A and the second isolated switch circuitry 100B to determine whether the positive and negative terminals of the power sources 104 are isolated from the chassis 117 of the vehicle. In some such examples, the control unit 114 may turn on the third isolated switch circuitry 100C and the fourth isolated switch circuitry 100D to determine whether the isolated switch and SCR drive circuitry 110 is enabled or disabled. In some such examples, the control unit 114 may turn on the fifth isolated switch circuitry 100E and the sixth isolated switch circuitry 100F to determine whether the relay circuitry 112 is enabled or disabled. Advantageously, the isolated switch circuitry 100A-100F described herein improve safety in connection with operating the vehicle.
In some examples, the isolation switch circuitry 200 is a single integrated circuit (IC) (such as a single IC package). For example, the first circuitry 202 and the second circuitry 204 may be included on the same die. In some examples, the isolation switch circuitry 200 may be implemented by two or more ICs in a single IC package to implement a multi-chip module (MCM). In some examples, the isolation switch circuitry 200 may be implemented by two or more ICs (such as two or more IC packages). For example, the first circuitry 202 may be on a first die and the second circuitry 204 may be on a second die. In some examples, the first circuitry 202 may be on a first die, the drain-derived supply circuitry 232 may be on a second die, and the third driver 224, the fourth driver 226, and the first transistor 228 may be on a third die. Alternatively, one or more hardware circuit components (such as the first driver 206, the second driver 208, the first capacitor 210, the second capacitor 212, the diode bridge 216, etc.) of the first circuitry 202 may be included in the second circuitry 204. Alternatively, one or more hardware circuit components (such as the third driver 224, the fourth driver 226, the first transistor 228, the switch 230, the drain-derived supply circuitry 232, etc.) of the second circuitry 204 may be included in the first circuitry 202. Alternatively, one or more hardware circuit components (such as the third diode 240, the second transistor 234, the resistor 238, etc.) of the drain-derived supply circuitry 232 may be included in the first circuitry 202.
A first example driver 206, a second example driver 208, a first example capacitor 210 and a second example capacitor 212 as part of an example isolation barrier 214, an example diode bridge 216, and a third example capacitor 218 are part of the first circuitry 202. In some examples, the first driver 206 and/or the second driver 208 may be implemented by a digital buffer that is configured to receive a signal input (such as a square wave input). For example, the digital buffer may implement the first driver 206 to provide a low output resistance to drive the first capacitor 210. Alternatively, the first driver 206 and/or the second driver 208 may be replaced with and/or otherwise implemented with a power oscillator (such as a power inverter) to drive (such as directly drive) the first capacitor 210 and/or the second capacitor 212. For example, the power oscillator may output a sinusoidal signal to drive the first capacitor 210 and/or the second capacitor 212.
An input of the first driver 206 is coupled to a first terminal of the first circuitry 202. An output of the first driver 206 is coupled to a first terminal (such as a first capacitor terminal) of the first capacitor 210. A second terminal (such as a second capacitor terminal) of the first capacitor 210 is coupled to an input of the diode bridge 216. An input (such as a control input terminal) of the second driver 208 is coupled to a second terminal of the first circuitry 202. An output of (such as a control output terminal) the second driver 208 is coupled to a first terminal of the second capacitor 212. A second terminal of the second capacitor 212 is coupled to an input of the diode bridge 216. Output(s) of the diode bridge 216 coupled to a first terminal of the third capacitor 218 and input(s) of the second circuitry 204. An input voltage VIN may be provided to power inputs of the drivers 206, 208. The capacitors 210, 212 have a capacitance of CISO. The third capacitor 218 has a voltage VDD(RX). A first example diode 220 and a second example diode 222 are part of the diode bridge 216. The first diode 220 has a voltage VDB(L) and the second diode 222 has a voltage VDB(R).
A third example driver 224, a fourth example driver 226, a first example transistor 228, an example switch 230, and example drain-derived supply circuitry 232 are part of the second circuitry 204. A second example transistor 234, a third example transistor 236, an example resistor 238, a third example diode 240, and a fourth example diode 242 are part of the drain-derived supply circuitry 232. The first transistor 228 is an N-channel metal-oxide-semiconductor field-effect transistor (MOSFET). For example, the first transistor 228 may be a power transistor. Alternatively, the first transistor 228 may be an N-channel field-effect transistor (FET), an N-channel insulated-gate bipolar transistor (IGBT), an N-channel junction field effect transistor (JFET), or an NPN bipolar junction transistor (BJT). The switch 230 is a transistor. For example, the switch 230 may be implemented by a MOSFET, a FET, an IGBT, a JFET, a BJT, etc.
The second transistor 234 is an N-channel MOSFET. Alternatively, the second transistor 234 may be an N-channel FET, an N-channel IGBT, an N-channel JFET, or an NPN BJT. The third transistor 236 is an N-channel JFET. Alternatively, the third transistor 236 may be an N-channel FET, an N-channel IGBT, an N-channel MOSFET, or an NPN BJT. The fourth diode 242 is a Zener diode. Alternatively, the fourth diode 242 may be any other type of diode or replaced with a voltage reference. In this example, the second transistor 234 and the fourth diode 242 may implement an open-loop linear voltage regulator. Alternatively, the open-loop linear voltage regulator may be implemented in a number of ways. In this example, the drain-derived supply circuitry 232 is implemented using a JFET (such as the third transistor 236) and a Zener-Source-Follower circuit (such as the resistor 238 and the second transistor 234). For example, the resistor 238 and the second transistor 234 may be part of example source-follower circuitry 239. Alternatively, any other combination of logic circuits or hardware circuit elements may be utilized to implement the drain-derived supply circuitry 232 to provide auxiliary charge to the first transistor 228.
An example load impedance (ZLOAD) 244 is depicted in
A power input (such as a power input terminal) of the third driver 224 is coupled to output(s) of the diode bridge 216, the first terminal of the third capacitor 218, and a first terminal (such as a first switch terminal) of the switch 230. An output of the third driver 224 is coupled to a control terminal (such as a switch control terminal) of the switch 230. A reference voltage terminal (such as a ground terminal) of the third driver 224 is coupled to the diode bridge 216, the source of the first transistor 228, an anode (such as an anode terminal, a diode terminal, etc.) of the fourth diode 242, a gate of the third transistor 236, and/or, more generally, the drain-derived supply circuitry 232.
A power input of the fourth driver 226 is coupled to output(s) of the diode bridge 216, the first terminal of the third capacitor 218, and the first terminal of the switch 230. An output (such as a control output terminal) of the fourth driver 226 is coupled to a gate of the first transistor 228. A reference voltage terminal (such as a ground terminal) of the fourth driver 226 is coupled to the diode bridge 216, the source of the first transistor 228, the anode of the fourth diode 242, the gate of the third transistor 236, and/or, more generally, the drain-derived supply circuitry 232.
A second terminal of the switch 230 is coupled to a cathode (such as a cathode terminal, a diode terminal, etc.) of the third diode 240, and/or, more generally, to the drain-derived supply circuitry 232. The drain of the first transistor 228 is coupled to the drain of the third transistor 236, and/or, more generally, the drain-derived supply circuitry 232. An anode of the third diode 240 is coupled to the source of the second transistor 234. A cathode of the fourth diode 242 is coupled to a gate of the second transistor 234 and a first terminal (e.g., a first resistor terminal) of the resistor 238. A drain of the second transistor 234 is coupled to a second terminal (e.g., a second resistor terminal) of the resistor 238 and a source of the third transistor 236.
One(s) of example isolation check logic 250, example control logic 252, example VCONT monitor logic 254, and/or example PORTV monitor logic 256 are adapted to be coupled to the isolation switch circuitry 200. For example, the control logic 252 and one of the isolation check logic 250, the VCONT monitor logic 254, or the PORTV monitor logic may be coupled to the isolation switch circuitry 200. In some examples, one or more of the isolation check logic 250, the control logic 252, the VCONT monitor logic 254, and/or the PORTV monitor logic 256 may be coupled to the isolation switch circuitry 200.
In some examples, the isolation check logic 250 may implement one(s) of the first sensors 116A-116B. For example, the isolation check logic 250 may implement the isolation check function of
The isolation check logic 250 is adapted to be coupled across the load impedance 244. For example, the isolation check logic 250 may be configured to periodically connect the positive and negative terminals of the power sources 104 of
The control logic 252 is adapted to be coupled to the control input of the third driver 224 and the control input of the fourth driver 226. For example, the control logic 252 may be configured to turn on (or off) the third driver 224 and/or the fourth driver 226. The VCONT monitor logic 254 is adapted to be coupled across the load impedance 244 (such as the source of the first transistor 228 and the reference voltage terminal 246). For example, the VCONT monitor logic 254 may be configured to periodically connect the positive and negative terminals of the power sources 104 of
The isolated switch circuitry 200 achieves data and/or power transfer between a high-voltage domain and a low-voltage domain, while preventing and/or otherwise reducing DC or uncontrolled transient current flowing through the isolated switch circuitry 200. For example, the first driver 206 and the second driver 208 may be configured to receive a DC voltage (VIN). In some such examples, VIN may be generated by an isolated power converter that draws power from the power sources 104 of
In example operation, the fourth driver 226 may output a control signal to turn on the first transistor 228 to provide power to a load, which is represented by the load impedance 244. In some prior isolated switch circuitry, self-induced common-mode transients may cause power interruptions to the fourth driver 226, which, in turn, may cause improper control of the first transistor 228. For example, in response to the first transistor 228 being turned off, a transmit (TX) ground (such as a node at the source of the first transistor 228) and a receive (RX) ground (such as the reference voltage terminal 246) may be equipotential. In some such examples, the isolated switch circuitry 200 may have the blocking voltage VBLOCK 248. For example, VRX may be equipotential. In some such examples, in response to the first transistor 228 being turned on, the RX ground may rise relative to the TX ground. For example, VRX may become positive relative to the reference voltage terminal 246. In some such examples, the first capacitor 210 and the second capacitor 212 may charge with the common-mode current to support the ground difference between the TX and RX grounds. In some such examples, if the common-mode current overwhelms the differential-mode current, then the fourth driver 226 may experience a current drought. For example, the fourth driver 226 may not have enough voltage potential at the power input of the fourth driver 226 to turn on the first transistor 228 when needed. Advantageously, the drain-derived supply circuitry 232 achieves improvements over such prior isolated switch circuitry as described herein.
In example operation, during a turn-on event (such as turning on the first transistor 228), a self-induced common mode transient event may occur to cause VRX to increase (such as become positive) and VDS to decrease (such as become negative). In example operation, during the turn-on event, auxiliary charge is derived from the drain-derived supply circuitry 232. For example, the drain of the third transistor 236 has the same drain voltage of the first transistor 228. In some such examples, the third driver 224 turns on the switch 230 to cause the auxiliary charge to flow from the drain-derived supply circuitry 232 to the third capacitor 218 to cause VDD(RX) to increase. For example, the auxiliary charge may flow in a direction represented by iDDS in
Advantageously, the auxiliary charge provided by the drain-derived supply circuitry 232 enables the third capacitor 218 to be relatively small (such as have a relatively small capacitance). Advantageously, the operation of the drain-derived supply circuitry 232 achieves the support of a wide range of self-induced common-mode transient rates. Advantageously, the operation of the switch 230 achieves the drawing of the auxiliary charge from the drain-derived supply circuitry 232 in response to engaging and/or otherwise enabling the first transistor 228. Advantageously, in response to the first transistor 228 blocking (such as causing the blocking voltage 248 to be generated), VDRV may be set low and minimal leakage current may be drawn from the drain of the first transistor 228.
A third example driver 324, a fourth example driver 326, a first example transistor 328, an example switch 330, and example drain-derived supply circuitry 332 are part of the second circuitry 304. A first drive voltage VAUX_EN may be provided to the input (such as the control input) of the third driver 324. A second drive voltage VDRV may be provided to the input (such as the control input) of the fourth driver 326. A gate-to-source voltage VGS is across a gate and a source of the first transistor 328. A drain-to-source voltage VDS is across a drain and the source of the first transistor 328. An auxiliary voltage VAUX is at an anode of the third diode 340 with respect to an example reference voltage terminal 346. A second example transistor 334, a third example transistor 336, an example resistor 338, a third example diode 340, and a fourth example diode 342 are part of the drain-derived supply circuitry 332. In this example, the resistor 338 and the second transistor 334 may be part of example source-follower circuitry 339.
In the illustrated example of
An example controller 348 is part of the isolated switch circuitry 300 of
In some examples, the isolation switch circuitry 300 of
A reference voltage (such as a reference voltage terminal) of the controller 348 is coupled to the diode bridge 316, a reference voltage of the third driver 324, a reference voltage of the fourth driver 326, a source of the first transistor 328, an anode of the fourth diode 342, and a gate of the third transistor 336. A first control output (such as a first control output terminal, a first controller output terminal, etc.) of the controller 348 is coupled to a control input of the third driver 324. A second control output (such as a second control output terminal, a second controller output terminal, etc.) of the controller 348 is coupled to a control input of the fourth driver 326.
In example operation, during a turn-on event (such as triggering the turn on of the first transistor 328), a self-induced common mode transient event may occur to cause VRX to increase (such as become positive) and VDS to decrease (such as decrease to zero). For example, the controller 348 may determine to turn on the third driver 324 and/or the fourth driver 326 based on a measurement (such as a current measurement, a voltage measurement, etc.). In some such examples, the controller 348 may receive a measurement indicative of VRX, VDD(RX), VGS, VDS, VDRV, and/or VAUX and determine to turn on the third driver 324 and/or the fourth driver 326 based on the received measurement(s).
In example operation, the controller 348 may determine to turn on the third driver 324. For example, the controller 348 may output and/or otherwise generate a first control signal (such as VAUX_EN) to be transmitted to the control input of the third driver 324 to cause the third driver 324 to turn on. In response to turning on the third driver 324, the third driver 324 outputs a second control signal (such as an output control signal) to turn on the switch 330 by closing the switch 330. In response to closing the switch 330, the drain-derived supply circuitry 332 provides charge (such as auxiliary charge) derived from a voltage at the drain of the first transistor 328. For example, the provided charge may flow in a direction represented by iDDS in
In example operation, during the turn-on event, the controller 348 may determine to turn on the fourth driver 326. For example, the controller 348 may output and/or otherwise generate a third control signal (such as VDRV) to be transmitted to the control input of the fourth driver 326 to cause the fourth driver 326 to turn on. In response to turning on the fourth driver 326, the fourth driver 326 outputs a fourth control signal (such as an output control signal) to turn on the first transistor 328 to cause the first transistor 328 to conduct current.
In example operation, in response to a collapse of VDS, the self-induced common-mode transient may conclude. In example operation, in response to the conclusion of the self-induced common-mode transient, the drain-derived supply voltage VAUX collapses. Advantageously, the controller 348 may cause the fourth driver 326 to have sufficient voltage at the power input of the fourth driver 326 to turn on and maintain the first transistor 328 in the on or enabled state during a self-induced common-mode transient event and, thereby, achieving power to continue to be delivered to the third capacitor 318.
A first example terminal impedance (ZTERM) 418 is represented between a first input terminal of the data RX circuitry 416 and an example node 422. A second example terminal impedance (ZTERM) 420 is represented between a second input terminal of the data RX circuitry 416 and the node 422. A voltage VRX(DATA) is referenced between the input terminals of the data RX circuitry 416. A voltage VRX is referenced between the node 422 and a reference voltage terminal 446.
A third example driver 426, a first example transistor 428, and a third example capacitor 430 are part of the second circuitry 404. A second example transistor 434, a third example transistor 436, an example resistor 438, a first example diode 440, and a second example diode 442 are part of the drain-derived supply circuitry 432. In this example, the resistor 438 and the second transistor 434 may be part of example source-follower circuitry 439. A drive voltage VDRV may be provided to an input of the third driver 426. A gate-to-source voltage VGS is across a gate and a source of the first transistor 428. A drain-to-source voltage VDS is across a drain and the source of the first transistor 428. An auxiliary voltage VAUX is at an anode of the first diode 440 with respect to the reference voltage terminal 446.
In the illustrated example of
An output of the first driver 406 is coupled to a first terminal of the first capacitor 410. A second terminal of the first capacitor 410 is coupled to the first input of the data RX circuitry 416. Power input(s) of the data RX circuitry 416 is/are coupled to a first terminal of the third capacitor 430 and a cathode of the first diode 440. Reference voltage(s) of the data RX circuitry 416 is/are coupled to source of the first transistor 428, the second terminal of the third capacitor 430, an anode of the second diode 442, and a gate of the third transistor 436. A control output of the data RX circuitry 416 is coupled to a control input of the third driver 426.
In example operation, the isolated switch circuitry 400 of
The isolated switch circuitry 500 of
Advantageously, the drain-derived supply circuitry 232, 332, 432 of
The first waveform 602 may correspond to a voltage VDB(L) across the first diode 220 of
In the example timing diagram 600 of
At a second example time T2 622, the fourth driver 226 is instructed to be turned on in response to VDRV rising from the first voltage level to a second voltage level (such as a logic high voltage indicative of a logic ‘1’). For example, the second time 622 may correspond to a turn-on event of the first transistor 228. In some such examples, the fourth driver 226 may initialize turning on of the first transistor 228. At the second time 622, VDB(L) is at a third voltage level greater than the first voltage level but less than the second voltage level, which is indicative of an increase of the voltage sent by the first driver 206 at the first time 620. At the second time 622, VDB(R) is at the third voltage level, which is indicative of a decrease of the voltage sent by the second driver 208 at the first time 620.
At a third example time T3 624, the first transistor 228 is on based on VGS rising from a first voltage level to a second voltage level. At the third time 624, the third driver 224 turns on the switch 230. At the third time 624, in response to turning on the switch 230, iDDS increases, which is indicative of charge being output from the drain-derived supply circuitry 232. Advantageously, iDDS is based on and/or otherwise derived from VDS of the first transistor 228. In response to iDDS flowing through the switch 230, the third capacitor 218 is charging, which causes VDD(RX) to increase. Advantageously, at the third time 624, VRX is beginning to increase, which is indicative of the common-mode current not overwhelming and/or otherwise exceeding the differential-mode current of the isolation switch circuitry 200 of
In this example, a common-mode transient event spans the third time 624 until a fourth example time T4 626. At the fourth time 626, VDS has collapsed, which concludes the common-mode transient event and causes the drain-derived supply voltage VAUX to collapse. In response to the collapse of VDS, iDDS also collapses. After the fourth time 720, power continues to flow to through the diode bridge 216 of
The first waveform 702 may correspond to a voltage VRX(DATA) at the inputs of the data RX circuitry 416 of
In the example timing diagram 700 of
In this example, the data RX circuitry 416, and/or, more generally, the isolated switch circuitry 400 of
At a second example time T2 716, the data RX circuitry 416 of
At a third example time T3 718, the first transistor 428 is on in response to VGS rising from a first voltage level to a second voltage level. In this example, the drain-derived supply circuitry 432 provides charge (such as charge based on VAUX) based on VDS to the third capacitor 430 of
In this example, a common-mode transient event spans the third time 718 until a fourth example time T4 720. At the fourth time 720, VDS has collapsed, which concludes the common-mode transient event and causes the drain-derived supply voltage VAUX to decrease. In this example, VDS does not completely collapse due to the VGS utilized to keep the first transistor 428 on. Because there the drain-derived supply circuitry 432 may implement a negative feedback loop, VAUX stops decreasing at a fifth example time T5 722. After the fourth time 720, the first transistor 228 is fully turned on based on VGS increasing to VDRV After the fourth time 626, data continues to flow through the capacitive channel via the first circuitry 402 of
The first waveform 802 may correspond to VDB(L) of
In the example timing diagram 800 of
At a second example time T2 820, the third driver 516 is instructed to be turned on in response to VDRV rising from the first voltage level to a second voltage level (such as a logic high voltage indicative of a logic ‘1’). For example, the second time 820 may correspond to a turn-on event of the transistor 518. In some such examples, the third driver 516 may initialize turning on of the transistor 518. At the second time 820, VDB(L) is at a third voltage level greater than the first voltage level but less than the second voltage level, which is indicative of an increase of the voltage sent by the first driver 502 at the first time 818. At the second time 820, VDB(R) is at the third voltage level, which is indicative of a decrease of the voltage sent by the second driver 504 at the first time 818.
At a third example time T3 822, the transistor 518 is on based on VGS rising from a first voltage level to a second voltage level. At the third time 822, the third waveform 806 and the fourth waveform 808 begin to diverge based on the capacitance of the third capacitor 514. In this example, as VRX increases, VDD(RX) decreases because of the absence of the auxiliary charge provided by the drain-derived supply circuitry 232 of
In this example, a common-mode transient event spans the third time 822 until a fourth example time T4 824. At the fourth time 824, VDS has collapsed, which concludes the common-mode transient event and causes VDD(RX) to increase. After the fourth time 824, power continues to flow through the capacitive channel of the isolation switch circuitry 500 of
Flowcharts representative of an example process that may be performed using example hardware logic, example machine readable instructions (such as hardware readable instructions), example hardware implemented state machines, and/or any combination thereof configured to implement the example isolation switch circuitry 100A-100F of
The machine readable instructions described herein may be stored in one or more of a compressed format, an encrypted format, a fragmented format, a compiled format, an executable format, a packaged format, etc. Machine readable instructions as described herein may be stored as data (such as portions of instructions, code, representations of code, etc.) useful to create, manufacture, and/or produce machine executable instructions. For example, the machine readable instructions may be fragmented and stored on one or more storage devices. The machine readable instructions may require one or more of installation, modification, adaptation, updating, combining, supplementing, configuring, decryption, decompression, unpacking, distribution, reassignment, compilation, etc., in order to make them directly readable, interpretable, and/or executable by a computing device and/or other machine. For example, the machine readable instructions may be stored in multiple parts, which are individually compressed, encrypted, and stored on separate computing devices, wherein the parts when decrypted, decompressed, and combined form a set of executable instructions that implement a program such as that described herein.
The machine readable instructions described herein can be represented by any past, present, or future instruction language, scripting language, programming language, etc. For example, the machine readable instructions may be represented using any of the following languages: assembly language, C, C++, Java, C#, Perl, Python, JavaScript, HyperText Markup Language (HTML), Structured Query Language (SQL), Swift, etc.
As described above, the example processes of
If, at block 902, the logic circuitry determines not to trigger the turn on event, the logic circuitry waits until the turn on event is determined to be triggered. If, at block 902, the logic circuitry determines to trigger the turn on event, then, at block 904, the logic circuitry turns on a first gate driver to close a switch to supply charge from drain of a power transistor. For example, the controller 348 may output a first control signal (such as VAUX_EN of
At block 906, the logic circuitry turns on a second gate driver to enable the power transistor. For example, the controller 348 may output a second control signal (such as VDRV of
At block 908, the logic circuitry determines whether to trigger a turn off event. For example, the controller 348 may determine whether to turn of the first transistor 328 of
At block 912, the logic circuitry turns off the second gate driver to disable the power transistor. For example, the controller 348 may output a fourth control signal to the fourth driver 326 to turn off the first transistor 328 of
At block 914, the logic circuitry determines whether to continue monitoring the circuitry. For example, the controller 348 may determine whether to continue monitoring the isolated switch circuitry 300 of
If, at block 1002, the logic circuitry determines that data has not been received at the communication channel, the logic circuitry waits at block 1002 until the data is determined to have been received. If, at block 1002, the logic circuitry determines that data has been received at the communication channel, then, at block 1002, the logic circuitry turns on a gate driver to enable a power transistor and cause charge to be provided from a drain of the power transistor. For example, the data RX circuitry 416 may output a control signal to turn on the third driver 426 of
At block 1006, the logic circuitry determines whether to trigger a turn off event. For example, the data RX circuitry 416 may determine that data is no longer being received at the inputs of the data RX circuitry 416. In some such examples, the data RX circuitry 416 may determine to trigger a turn off event based on the determination that data is not being received.
If, at block 1006, the logic circuitry determines not to trigger the turn off event, the logic circuitry returns to block 1004 to continue turning on the gate driver to enable the power transistor and cause the charge to be provided from the drain of the power transistor. If, at block 1006, the logic circuitry determines to trigger the turn off event, then, at block 1008, the logic circuitry turns off the gate driver to disable the power transistor. For example, the data RX circuitry 416 may output a control signal to turn off the third driver 426.
At block 1010, the logic circuitry determines whether to continue monitoring circuitry. For example, the data RX circuitry 416 may determine whether to continue monitoring the isolated switch circuitry 400 of
In this description, the term “and/or” (when used in a form such as A, B and/or C) refers to any combination or subset of A, B, C, such as: (a) A alone; (b) B alone; (c) C alone; (d) A with B; (e) A with C; (f) B with C; and (g) A with B and with C. Also, as used herein, the phrase “at least one of A or B” (or “at least one of A and B”) refers to implementations including any of: (a) at least one A; (b) at least one B; and (c) at least one A and at least one B.
Example methods, apparatus, and articles of manufacture described herein improve control of driver circuitry (such as driver circuitry part of isolated switch circuitry). Advantageously, methods, apparatus, and articles of manufacture described herein eliminate and/or otherwise reduce current droughts in driver circuitry by providing auxiliary charge derived from drain-assisted supply circuitry. Advantageously, methods, apparatus, and articles of manufacture described herein may provide such auxiliary charge in response to engaging and/or otherwise enabling a power transistor. Advantageously, methods, apparatus, and articles of manufacture described herein achieve a reduction in size of decoupling capacitor(s) part of the driver circuitry. Advantageously, methods, apparatus, and articles of manufacture described herein support a wide range of self-induced common-mode transient rates.
Modifications are possible in the described embodiments, and other embodiments are possible, within the scope of the claims.