Claims
- 1. A semiconductor electrical device comprising:
- a doped substrate;
- a diffusion barrier formed substantially at the surface of said substrate, said diffusion barrier preventing the diffusion of dopant atoms from said substrate;
- a single crystal semiconductor layer formed on the surface of said diffusion barrier; and
- a trench having an opening at the surface of said crystalline semiconductor layer, said trench extending through said diffusion barrier and into said dope substrate;
- a capacitor at least partially formed in said trench; and
- a transistor having a channel formed in a surface of said single crystal semiconductor layer and being electrically connected to said capacitor.
- 2. The device of claim 1 wherein said capacitor comprises:
- a conductive layer formed in said trench but insulated from said substrate, said conductive layer serving as a first plate of said capacitor, and said substrate serving as a second plate of said capacitor.
- 3. A semiconductor electrical device comprising:
- a doped silicon substrate;
- a layer of silicon dioxide formed substantially at the surface of said substrate, said layer of silicon dioxide preventing the diffusion of dopant atoms from said substrate;
- a single crystal semiconductor layer formed on the surface of said layer of said layer of silicon dioxide;
- a trench having an opening at the surface of said crystalline semiconductor layer and extending through said layer of silicon dioxide into said doped silicon substrate;
- a capacitor at least partially formed in said trench; and
- a transistor having a channel formed in a surface of said single crystal semiconductor layer and being electrically connected to said capacitor.
- 4. The device of claim 3 wherein said capacitor comprises;
- a conductive layer formed in said trench but insulated from said substrate, said conductive layer serving as a first plate of said capacitor, and said substrate serving as a second plate of said capacitor.
Parent Case Info
This application is a continuation of application Ser. No. 826,432, filed Feb. 5, 1986 now abandoned.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
4713678 |
Womack et al. |
Dec 1987 |
|
Foreign Referenced Citations (1)
Number |
Date |
Country |
0108390 |
May 1984 |
EPX |
Continuations (1)
|
Number |
Date |
Country |
Parent |
826432 |
Feb 1986 |
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