The disclosure relates generally to ion implantation apparatus and more particularly to high energy beamline ion implanters.
Ion implantation is a process of introducing dopants or impurities into a substrate via bombardment. Ion implantation systems may comprise an ion source and a series of beam-line components. The ion source may comprise a chamber where ions are generated. The ion source may also comprise a power source and an extraction electrode assembly disposed near the chamber. The beam-line components, may include, for example, a mass analyzer, a first acceleration or deceleration stage, a collimator, and a second acceleration or deceleration stage. Much like a series of optical lenses for manipulating a light beam, the beam-line components can filter, focus, and manipulate ions or ion beam having particular species, shape, energy, and/or other qualities. The ion beam passes through the beam-line components and may be directed toward a substrate mounted on a platen or clamp.
Implantation apparatus capable of generating ion energies of approximately 1 MeV or greater are often referred to as high energy ion implanters, or high energy ion implantation systems. One type of high energy ion implanter employs a linear accelerator, or LINAC, where a series of electrodes arranged as tubes conduct and accelerate the ion beam to increasingly higher energy along the succession of tubes, where the electrodes receive an AC voltage signal. Known (RF) LINACs are driven by an RF voltage applied a generally in the MHZ range, such as 1 MHz to 700 MHz.
One issue for operation of RF LINAC ion implanters is the usefulness of the ability to process ions of different mass/charge ratio (m/q). For a given acceleration stage, ions are accelerated along a drift tube assembly that includes multiple electrodes, configured as hollow cylinder drift tubes that conduct an ion beam through each drift tube. The drift tube assembly includes at least one powered electrode and a ground electrode that define a fixed focus length for focusing the ion beam as conducted through the drift tube assembly. The focusing length of a given drift tube of the drift tube assembly may be chosen as a compromise so that acceleration of different species of differing m/q ratios may be accomplished, at the expense of reduced focusing performance.
With respect to these and other considerations the present disclosure is provided.
In one embodiment, a drift tube is provided. The drift tube may include a middle portion, arranged as a hollow cylinder, and coupled to receive an RF voltage signal. The drift tube may include a first end portion, adjacent to and electrically connected to the middle portion. The middle portion and the first end portion may define a central opening to conduct an ion beam therethrough, along a direction of beam propagation. The end portion may include a first focus assembly, and a second focus assembly, where the first focus assembly and the second focus assembly are movable with respect to one another along the direction of beam propagation, from a first configuration to a second configuration.
In another embodiment, an apparatus may include a first grounded drift tube, a second grounded drift tube, downstream of the first grounded drift tube, and an AC drift tube assembly disposed between the first grounded drift tube and the second grounded drift tube. The AC drift tube assembly may include at least a first AC drift tube, where the first AC drift tube includes a middle portion, arranged as a hollow cylinder. The first AC drift tube may also include a first end portion, adjacent to and electrically connected to the middle portion. The middle portion and the first end portion may define a central opening to conduct an ion beam therethrough, along a direction of beam propagation. The first end portion may include a first focus assembly, and a second focus assembly, where the first focus assembly and the second focus assembly are movable with respect to one another along the direction of beam propagation, from a first configuration to a second configuration.
In a further embodiment, an ion implanter may include an ion source to generate an ion beam; and a linear accelerator, to transport and accelerate the bunched ion beam. The linear accelerator may include a plurality of acceleration stages, wherein a given acceleration stage of the plurality of acceleration stages includes a drift tube assembly, arranged to transmit the ion beam along a direction of beam propagation. The drift tube assembly may include a first grounded drift tube, a second grounded drift tube, downstream of the first grounded drift tube; and an AC drift tube assembly, comprising at least a first AC drift tube. The first AC drift tube may include a middle portion; and a first end portion, adjacent to the middle portion. The first end portion may include a plurality of focus assemblies that are movable with respect to one another along the direction of beam propagation.
The drawings are not necessarily to scale. The drawings are merely representations, not intended to portray specific parameters of the disclosure. The drawings are intended to depict exemplary embodiments of the disclosure, and therefore are not be considered as limiting in scope. In the drawings, like numbering represents like elements.
An apparatus, system and method in accordance with the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, where embodiments of the system and method are shown. The system and method may be embodied in many different forms and are not be construed as being limited to the embodiments set forth herein. Instead, these embodiments are provided so this disclosure will be thorough and complete, and will fully convey the scope of the system and method to those skilled in the art.
Terms such as “top,” “bottom,” “upper,” “lower,” “vertical,” “horizontal,” “lateral,” and “longitudinal” may be used herein to describe the relative placement and orientation of these components and their constituent parts, with respect to the geometry and orientation of a component of a semiconductor manufacturing device as appearing in the figures. The terminology may include the words specifically mentioned, derivatives thereof, and words of similar import.
As used herein, an element or operation recited in the singular and proceeded with the word “a” or “an” are understood as potentially including plural elements or operations as well. Furthermore, references to “one embodiment” of the present disclosure are not intended to be interpreted as precluding the existence of additional embodiments also incorporating the recited features.
Provided herein are approaches for improved high energy ion implantation systems and components, based upon a beamline architecture, and in particular, ion implanters based upon linear accelerators. For brevity, an ion implantation system may also be referred to herein as an “ion implanter.” Various embodiments entail novel approaches that provide the capability of flexibly adjusting the effective drift length within acceleration stages of a linear accelerator.
As shown in
As in known linear accelerators, the AC drift tube 104 may be coupled to receive RF voltage from the RF power assembly 130, in order to generate a time varying electric field across G1 and G2. The RF power assembly 130 may include an RF power source and resonator (not separately shown) as in known LINACs. This time varying RF field will operate to accelerate the ion beam 110 across these gaps in order to increase the energy of ion beam 110. As in known linear accelerators, in operation, the apparatus 100 is configured with a central opening 122 to conduct the ion beam 110 therethrough. In particular, in operation the ion beam 110 may be received as a bunched ion beam that traverses the gaps G1 and gap G2 as a series of ion packets. Accordingly, by timing the entry of the packets of ion beam 110 with the RF field applied across gaps G1 and gap G2, the amplitude of the RF field operating on the ion beam 110 may be optimized for maximum acceleration of the ion beam 110.
In addition to accelerating the ion beam 110, the apparatus 100 includes components to apply a variable focus to the ion beam 110. As shown in
In the embodiment of
As shown in this embodiment of
As further shown in
While the configuration of
Moreover, in some embodiments, one or more AC drift tubes may be configured to provide multiple quadrupole configurations (quadrupoles), where the quadrupole fields generated by the different quadrupoles may or may not differ from one another. Because a given quadrupole will inherently de-focus an ion beam in one direction and focus the ion beam in the other direction, in some embodiments, the AC drift tube assembly may be arranged to generate a pair of quadrupoles, or alternatively, a triplet of quadrupoles, in order to balance out focusing of an ion beam in different directions. In one non-limiting example, a doublet may be set so the first quadrupole provides defocus of an ion beam in the “x” direction while aggressively focusing the ion beam in the “y” direction, while the second quadrupole is set to focus the ion beam in the “x” direction while merely gently defocusing the ion beam in the “y:direction. As a result, such a quadrupole pair together may generate a net focusing in both directions, “x” and “y.” Thus, a first focus assembly in a first end portion of an AC drift tube assembly may be placed in a first configuration to generate a first quadrupole that has a first focusing effect on an ion beam. At the same time, a second focus assembly in a second end portion of the AC drift tube assembly may be placed in a second configuration to generate a second quadrupole that has a second focusing effect on the ion beam, in order to generate an overall targeted focusing effect on the ion beam.
Turning now to
In
As shown in
Turning now to
In the embodiment of
Note that according to some embodiments, the fingers of second focus assembly 222 and the fingers of third focus assembly 224 may be independently movable in a continuous fashion with respect to one another and with respect to the focus assembly 220. Thus, the electric fields generated by the AC drift tube 204 may be adjusted in a smooth, continuous fashion by incremental movement of the second focus assembly 222 and/or incremental movement of the focus assembly 224.
As an example, in the configuration of
Note also, that the various focus assemblies of the embodiment of
Note that according to some embodiments, the second end portion 214 may be adjustable in a manner similar to the aforementioned embodiment of
In accordance with different embodiments of the disclosure, an AC drift tube having plurality of focusing assemblies, such as the AC drift tube 204, may be arranged in a triple gap acceleration stage, or alternatively, in a double gap acceleration stage.
To illustrate these alternative embodiments,
Note that according to some embodiments, similarly to the case with
The ion implanter 300 may include an analyzer 310, functioning to analyze the ion beam 306 as in known apparatus, by changing the trajectory of the ion beam 306, as shown. The ion implanter 300 may also include a buncher 312, and a linear accelerator 314 (shown in the dashed line), disposed downstream of the buncher 312, where the linear accelerator 314 is arranged to accelerate the ion beam 306 to form a high energy ion beam 315, greater than the ion energy of the ion beam 306, before entering the linear accelerator 314. The buncher 312 may receive the ion beam 306 as a continuous ion beam and output the ion beam 306 as a bunched ion beam to the linear accelerator 314. The linear accelerator 314 may include a plurality of acceleration stages (314-A, 314-B, to 314-N (not shown)), arranged in series, as shown. In various embodiments, the ion energy of the high energy ion beam 315 may represent the final ion energy for the ion beam 306, or approximately the final ion energy. In various embodiments, the ion implanter 300 may include additional components, such as filter magnet 316, a scanner 318, collimator 320, where the general functions of the scanner 318 and collimator 320 are well known and will not be described herein in further detail. As such, a high energy ion beam, represented by the high energy ion beam 315, may be delivered to an end station 322 for processing a substrate 324. Non-limiting energy ranges for the high energy ion beam 315 include 500 keV-10 MeV, where the ion energy of the ion beam 306 is increased in steps through the various acceleration stages of the linear accelerator 314. In accordance with various embodiments of the disclosure, one or more of the acceleration stages of the linear accelerator 314 may include a double gap or a triple gap drift tube assembly having at least one variable focus AC drift tube couple, as detailed with respect to the embodiments of
Note that the variable focus drift tube assemblies as set forth herein may be implemented in one or more stages of a LINAC according to various considerations. In some implementations, a variable focus drift tube assembly may be provided throughout the different stages of a LINAC, from the most upstream stage to the most downstream stage. In some implementations, such as where final ion energy is relatively high, such as greater than 1 MeV, greater than 2 MeV, or greater than 3 MeV, variable focus drift tube assemblies may be placed just in upstream stages, such as the first several stages of a LINAC. In these upstream stages, where ion energy of the ion beam being accelerated is still relatively lower, a variable focus drift tube may exert a stronger effect than in downstream stages, where the ion energy may be so high, wherein the focus effect generated by a variable focus drift tube assembly is both not very powerful and not very needed. Thus, for purposes of reducing complexity or cost, variable focus drift tube assemblies may be placed just in the most upstream stages before ion energy becomes too high.
In other implementations, where the targeted final ion energy is relatively lower, such as below 2 MeV, variable focus drift tube assemblies may be effective and needed in all LINAC stages, and thus may be located in each LINAC stage.
In view of the above, the present disclosure provides at least the following advantages. As a first advantage, the variable focus drift tube assembly of the present embodiments provides the ability to set the optimal focus matching a specific m/q for any given ion, thus increasing flexibility and efficiency for processing different ions in a given ion implanter. Another advantage is the ability to minimize or eliminate other focusing elements from a beamline, such as bulky quadrupoles that are used in known LINACs.
While certain embodiments of the disclosure have been described herein, the disclosure is not limited thereto, as the disclosure is as broad in scope as the art will allow and the specification may be read likewise. Therefore, the above description are not to be construed as limiting. Those skilled in the art will envision other modifications within the scope and spirit of the claims appended hereto.
Number | Name | Date | Kind |
---|---|---|---|
4667111 | Glavish | May 1987 | A |
5296714 | Treglio | Mar 1994 | A |
5796219 | Hirakimoto | Aug 1998 | A |
5801488 | Fujisawa | Sep 1998 | A |
5907158 | Nasser-Ghodsi | May 1999 | A |
6242747 | Sugitani | Jun 2001 | B1 |
6262638 | Scherer | Jul 2001 | B1 |
6291828 | Saadatmand | Sep 2001 | B1 |
6320334 | Roberge | Nov 2001 | B1 |
6326746 | Chen | Dec 2001 | B1 |
6423976 | Glavish | Jul 2002 | B1 |
6653643 | Saadatmand | Nov 2003 | B2 |
6777893 | Swenson | Aug 2004 | B1 |
6949895 | DiVergilio | Sep 2005 | B2 |
7098615 | Swenson | Aug 2006 | B2 |
7767561 | Hanawa | Aug 2010 | B2 |
8324810 | Kazakov | Dec 2012 | B2 |
9269541 | Inada | Feb 2016 | B2 |
9591740 | Belchenko | Mar 2017 | B2 |
10505334 | Yang | Dec 2019 | B2 |
10651011 | Sinclair | May 2020 | B2 |
10943767 | Kowal | Mar 2021 | B1 |
10991546 | Kowal | Apr 2021 | B1 |
11089670 | Mishin | Aug 2021 | B2 |
11160158 | Nguyen | Oct 2021 | B1 |
11189460 | Carlson | Nov 2021 | B1 |
11217427 | Renau | Jan 2022 | B1 |
11388810 | Kurunczi | Jul 2022 | B2 |
11476087 | Sinclair | Oct 2022 | B2 |
11569063 | Murphy | Jan 2023 | B2 |
11576252 | Kowal | Feb 2023 | B2 |
11596051 | Biloiu | Feb 2023 | B2 |
20020084427 | Saadatmand | Jul 2002 | A1 |
20030038254 | Saadatmand | Feb 2003 | A1 |
20090314949 | Plettner | Dec 2009 | A1 |
20100072401 | Parrill | Mar 2010 | A1 |
20100072405 | Yu | Mar 2010 | A1 |
20110260047 | Lee | Oct 2011 | A1 |
20110297845 | Ota | Dec 2011 | A1 |
20120175518 | Godet | Jul 2012 | A1 |
20130118305 | Marston | May 2013 | A1 |
20140188416 | McIntyre | Jul 2014 | A1 |
20140345522 | Kabasawa | Nov 2014 | A1 |
20140361197 | Lee | Dec 2014 | A1 |
20150228523 | Lee | Aug 2015 | A1 |
20160005564 | Chaney | Jan 2016 | A1 |
20160174355 | Lal | Jun 2016 | A1 |
20160293154 | Yang | Oct 2016 | A1 |
20170213684 | Lee | Jul 2017 | A1 |
20170221678 | Likhanskii | Aug 2017 | A1 |
20180120504 | Qi | May 2018 | A1 |
20180197716 | Sasaki | Jul 2018 | A1 |
20180276164 | Das Sharma | Sep 2018 | A1 |
20190371562 | Sinclair | Dec 2019 | A1 |
20200066486 | Sinclair | Feb 2020 | A1 |
20200234918 | Sinclair | Jul 2020 | A1 |
20200357603 | Sinclair | Nov 2020 | A1 |
20210074508 | Lee | Mar 2021 | A1 |
20210307152 | Kowal | Sep 2021 | A1 |
20220037116 | Sinclair | Feb 2022 | A1 |
20220248523 | Sinclair | Aug 2022 | A1 |
Number | Date | Country |
---|---|---|
3616569 | Nov 1986 | DE |
2209242 | May 1989 | GB |
2001052897 | Feb 2001 | JP |
101890514 | Aug 2018 | KR |
Entry |
---|
International Search Report and Written Opinion for the International Patent Application No. PCT/US2022/041673, dated Dec. 22, 2022, 7 pages. |
Number | Date | Country | |
---|---|---|---|
20230083050 A1 | Mar 2023 | US |