This disclosure relates generally to a method and system for data transmission, and more particularly to digital data transmission in semiconductor devices such as integrated circuits.
For high speed data communication in integrated circuits (IC), it is important to minimize error rates of signals transmitted. In certain types of IC devices, for example in certain three-dimensional IC (3DIC) devices, certain long transmission paths, such as channels between dies, can significantly distort signal waveforms. Signal distortions can result in high error rates in data transmission. Efforts are ongoing to reduce data transmission error rates due to signal distortion.
Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
The following disclosure provides different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
High-speed data transmission with low error rate is important for integrated circuits. In certain types of integrated circuit devices, relatively long (e.g., on the order of 1000 μm or more) data transmission paths are employed. For example, in certain three-dimensional integrated circuits (3DICs), multiple semiconductor dies are interconnected in the packaged together to form an integrated circuit device. Examples of such integrated circuit devices include Chip-on-Wafer-on-Substrate (CoWoS), Integrated FanOut (InFO), and System Integrated Chips (SoIC). In some of these integrated circuit devices, semiconductor dies are arranged edge-to-edge. In certain arrangements, the edge-to-edge distance is on the order of 1000 μm, and the lengths inter-die connections can be on the water of several thousand micrometers (e.g., 4000 μm). Data transmission paths (or traces) of such distances can cause significant distortions to signals being transmitted such that the eye openings in the eye diagrams for the transmitted signals with rising and falling edges are significantly diminished. Such diminishment becomes more severe as the lengths of the traces increase. Although the eye-openings in the eye diagrams can be increased in some cases by increasing the driving power for the signals, for example, by increasing the sizes (e.g., number of fingers) of the driving buffers, such increasing power can lead to over/under-shooting waveforms in the transmitted signals. While certain driving buffer circuit designs, such as driving buffers with capacitive feedbacks, may improve the way forms of the transmitted signals with rising and falling edges, such designs are difficult to implement in high density integrated circuits for a variety of reasons, including spatial constraints imposed by compact area and high channel density requirements.
In some embodiments, digital logic components, such as those found in standard cells in integrated circuit devices, are used to synthesize signals with controllable waveforms that result in transmitted signals that meet certain requirements, such as above-threshold high openings and below-threshold over/under-shooting. In some embodiments, driving buffers with logic controls and delay chains are used to achieve controllable slew rates at rising and falling edges to minimize over/under shooting behavior in signals. In some embodiments, control logic and delay chains produce controllable rising/falling “stair-type” edges to obtain optimized damping waveform.
In some embodiments, a driving buffer includes transistors (e.g., fin field-effect transistors (FinFETs)) of sizes (e.g., number of fingers) selected to produce the height of the respective “stair heights” in the “stair-type” rising and falling edges. For example, in some embodiments, a voltage step of a certain height in the rising edge of the output generated by a driving buffer can be produced by transistors of a certain size (e.g., 16 fingers); in general, voltage step height can be controlled by the ratio of switched-on fingers and all fingers.
In some embodiments, a driving buffer capable of generating configurable output waveforms includes multiple unit cells each including a delay chain of multiple delay units (i.e., logical devices such as inverters), a selector (e.g., a multiplexer) connected and configured to select a desired number of delay units to generate a signal with a desired amount of delay, and a buffer configure to generate an output of a desired signal amplitude (e.g., voltage amplitude). The output signal of the unit cell, therefore, is of a given height and a selected amount of delay. In some embodiments, the amplitude of the output signal for each unit cell is different from the amplitude of the output signal of at least one of the remaining unit cells. The combined output from the unit cells, in some embodiments, is a signal with stepped rising and falling edges; the width of each step can be tuned by selecting the number of delay units in the appropriate in the cell, and the height of each step can be tuned by selecting the appropriate unit cell(s). The driving buffer is thus capable of generating signals with rising and falling edges of tunable waveforms.
Referring to
In some embodiments, as shown in
In some embodiments, each delay cell 122i includes one or more digital cells, such as inverter cells, AND cells, or OR cells. The amount of time delay produced by each cell depends on the size of the cell. The size of the cell in some embodiments is determined by the sizes of the transistors, and generally, the delay time decreases with the cell size. For example, delay times will be lower with process shrinkage, and the delay time in some examples is lower than 10 ps when process node is smaller than 16 nm.
A specific example 300 of a driving buffer 120 capable of generating signals with rising and falling edges of configurable waveforms is shown in
In this particular example, the first pair 320 of transistors each have a size of 16 fingers; the second pair 340 of transistors each have a size mp2, mn2 of 16 fingers; and the third pair 360 of transistors each have the size mp3, mn3 of 32 fingers. As explained below, the sizes of the transistors affect the shapes of waveforms generated by the driving buffer 300.
In operation, each transistor in the driving buffer 300 drives a respective current as a function of its gate voltage. As the input signal arrives at different pairs 320, 340, 360 of transistors at different times due to the delay puffers 330, 350, the pairs 320, 340, 360 of transistors begin generating respective currents at different times. The combined current at the output 308, therefore, will have an amplitude that stepwise increases in response to the rising edge of the input signal. Likewise, the Paris 320, 340, 360 of transistors ceases to generate respective currents at different times in response to the falling edge of the input signal, and the combined current at the output 308 will have an amplitude that stepwise decreases in response to the falling edge of the input signal. The voltage at the load (not shown) connected to the output 308 were thus have a waveform having a stepwise increasing rising edge and a stepwise decreasing falling.
In some embodiments, as shown in
In some embodiments, the components on the N-side in the example circuit shown in
In some embodiments, a driving buffer is capable of generating signals with rising and falling edges with tunable waveforms. As an example, in the integrated circuit device 400 shown in
Referring again to
With the configuration of the driving buffer 410 in
In some embodiments, parameters of buffer drivers, such as those shown in
In some embodiments, as outlined in
The example driving buffers and methods described above, by synthesizing shapes of the rising and falling edges, and thus controlling slew rates, compensate the distortion by the data transmission paths to produce transmitted signals of large eye-openings in eye-diagrams without large over/under shooting, resulting in low inter-symbol interference (ISI). The driver buffer circuit in some embodiments a fully digital cells without the need for capacitive feedback, making the design compatible with standard cell height circuits. The modular design of the driving buffer makes the design scalable and provides flexibility for trace routing the integrated circuit design.
The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.
The present application claims the benefit of U.S. Provisional Patent Application No. 63/182,007, titled “SYNTHESIZABLE BUFFER WITH CONTROLLABLE SLEW RATE FOR DATA TRANSMISSION” and filed Apr. 30, 2021. The disclosure of U.S. Provisional Patent Application No. 63/182,007 is hereby incorporated by reference in its entirety.
Number | Name | Date | Kind |
---|---|---|---|
5862390 | Ranjan | Jan 1999 | A |
6097219 | Urata | Aug 2000 | A |
6232814 | Douglas, III | May 2001 | B1 |
6452428 | Mooney | Sep 2002 | B1 |
6704818 | Martin | Mar 2004 | B1 |
6744287 | Mooney | Jun 2004 | B2 |
6864726 | Levin | Mar 2005 | B2 |
7151392 | Lee | Dec 2006 | B2 |
7190719 | Roy | Mar 2007 | B2 |
7215144 | Mitby | May 2007 | B2 |
7777538 | Abel | Aug 2010 | B2 |
8395411 | Diffenderfer | Mar 2013 | B2 |
8917131 | Song | Dec 2014 | B2 |
9129694 | Song | Sep 2015 | B2 |
9444462 | Chaung | Sep 2016 | B2 |
9461634 | Jung | Oct 2016 | B2 |
10141931 | Choi | Nov 2018 | B2 |
10931278 | Morinaka | Feb 2021 | B2 |
20040212399 | Mulligan | Oct 2004 | A1 |
20070210832 | Abel | Sep 2007 | A1 |
20120086470 | Diffenderfer | Apr 2012 | A1 |
20120119792 | Wang | May 2012 | A1 |
20130147532 | Song | Jun 2013 | A1 |
20140176197 | Shon | Jun 2014 | A1 |
20180107774 | Fredenburg | Apr 2018 | A1 |
20200186134 | Liu | Jun 2020 | A1 |
Entry |
---|
Shin et al., “Slew-Rate-Controlled Output Driver Having Constant Transition Time Over Process, Voltage, Temperature, and Output Load Variations,” IEEE Transactions on Circuits and Systems—II: Express Briefs, vol. 54, No. 7, Jul. 2007; pp. 601-605. |
Number | Date | Country | |
---|---|---|---|
20220352880 A1 | Nov 2022 | US |
Number | Date | Country | |
---|---|---|---|
63182007 | Apr 2021 | US |