1. Field of the Invention
The present invention relates to a driving circuit for a brushless motor, more particularly to a driving circuit employing a Hall element to detect the rotational position of the brushless motor.
2. Description of the Related Art
A conventional driving circuit of this type is described by Okada et al. in Japanese Patent Application Publication No. 2007-037386. The driving circuit drives a single-phase brushless motor and has the structure shown in
Except for the Hall element 100, the motor coil 200, and, in some cases, the power transistors (not shown), the driving circuit S is formed as an integrated circuit 104 on a single semiconductor chip powered by a power supply 102. The integrated circuit 104 has a Hall bias circuit 106 that outputs a bias voltage VB to the Hall element 100, which is typically mounted on the stator of the brushless motor, causing current to flow through the Hall element 100 to ground. The Hall element 100 has output terminals A, B from which it outputs a complementary pair of sinewave signals SHA, SHB indicating the rotational position of the rotor of the brushless motor. The frequency of these Hall signals SHA, SHB also indicates the rotational speed of the motor. For a single-phase motor, there is only one Hall element 100, and only one pair of amplifiers 108, 110 is needed to amplify the difference between the Hall signals and determine the current to be fed through the coil 200 in the stator. As the rotor turns, the output voltage of amplifier 108 is alternately higher than and lower than the output voltage of amplifier 110, and the current fed through the coil 200 reverses direction at the proper timings to provide motor torque.
In the conventional driving circuit S in
When the supply voltage is only five volts (5 V), for example, if the bias current fed through the Hall element 100 is ten milliamperes (10 mA) and the total current consumed by the other control circuits in the integrated circuit 104 is 3 mA, the total power dissipation is only about 0.065 watts (0.065 W, calculated as (10 mA+3 mA)×5 V), which is not problematic.
If the coil 200 is driven at 50 V, however, the total power dissipation becomes 0.65 W (calculated as (10 mA+3 mA)×50 V), which stresses the heat dissipating capabilities of some types of packages.
An object of the present invention is to provide a brushless motor driving circuit that can be housed in a single package even if the motor is driven at a high voltage.
The driving circuit provided by the invention drives a brushless motor by using current supplied at a first voltage by a power supply. The driving circuit includes a driving voltage generating circuit for generating voltages for driving the brushless motor, a Hall element that faces the rotating member of the brushless motor, and a Hall bias current feeding circuit that feeds bias current from the power supply to the Hall element. The Hall element outputs a complementary pair of periodic signals with periods corresponding to a rotational period of the rotating member. The driving circuit also includes a control circuit that controls the driving voltage generating circuit according to the complementary pair of periodic signals.
The driving voltage generating circuit, at least part of the Hall bias current feeding circuit, and the control circuit are integrated into a single integrated circuit which may also include the Hall element.
The driving circuit also includes a load element through which the bias current passes from the power supply to the Hall bias current feeding circuit, producing a voltage drop that reduces the first voltage to a second voltage, lower than the first voltage. The load element is preferably external to the single integrated circuit.
By reducing the first voltage to the second voltage, the load element reduces power dissipation in the Hall bias current feeding circuit, permitting the Hall bias current feeding circuit to be partly or wholly integrated with the driving voltage generating circuit and the control circuit even when the brushless motor is driven at a high voltage.
The Hall bias current feeding circuit may include a Hall bias circuit that generates a control signal, and a switching element that feeds the bias current to the Hall element in response to a control signal. The Hall bias circuit is internal to the single integrated circuit; the switching element may be either internal or external to the single integrated circuit. The switching element is in series with the load element and receives the bias current at the second voltage from the load element. The Hall bias circuit may operate at either the first or the second voltage with comparatively low power dissipation. A conventional integrated circuit configuration may be employed with the load element and the external switching element as external elements.
The Hall bias circuit may control the switching element in response to a command signal received from the control circuit.
In the attached drawings:
Novel driving circuits embodying the invention will now be described with reference to the attached drawings, in which like elements are indicated by like reference characters.
The driving circuit 10 shown in
The negative terminal of the power supply 12 is connected to ground; the positive terminal of the power supply 12 is connected to a first voltage (Vcc) input terminal 14A of an integrated circuit 14. The first voltage input terminal 14A is paired with a ground terminal 14B to power an H-bridge and predriver circuit 16 that functions as a driving voltage generating circuit and coil energizing circuit. The H-bridge and predriver circuit 16 is internal to the integrated circuit 14.
The H-bridge and predriver circuit 16 includes four NMOS transistors 18A, 18B, 18C, 18D interconnected in a H-bridge configuration, transistors 18A and 188 forming one totem-pole half-bridge, transistors 18C and 18D forming another totem-pole half-bridge. The first voltage input terminal 14A is connected to the drains (D) of NMOS transistors 18A and 18C, and the sources of NMOS transistors 18B and 18D are connected to the ground terminal 14B. The source (S) of NMOS transistor 18A is connected to the drain of NMOS transistor 18B, and the source of NMOS transistor 18C is connected to the drain of NMOS transistor 18D. One end of a coil 20 in the brushless motor is connected to the source of NMOS transistor 18A and the drain of NMOS transistor 18B; the other end of the coil 20 is connected to the source of NMOS transistor 18C and the drain of NMOS transistor 18D.
The H-bridge configuration of NMOS transistors 18A, 18B, 18C, 18D can be expanded, if necessary, into a multistage power output configuration with a similar set of four transistors in each stage.
A pair of bootstrap capacitors 22, 23 are connected to respective ends of the coil 20 and respective terminals of the integrated circuit 14.
The H-bridge circuit is redrawn in
Referring again to
The control circuit 28 starts operating on command from a device (not shown) external to the integrated circuit 14 to turn on the brushless motor. The control circuit 28 operates by feedback control, receiving a signal indicating the rotational position of the brushless motor from a Hall element 30 disposed facing the rotor of the brushless motor and controlling the predrivers 24A, 24B, 24C, 24D according to this positional feedback signal.
The control circuit 28 operates on power supplied from a Hall bias circuit 32. An operating voltage is applied to a power input terminal 32A of the Hall bias circuit 32 from the power supply 12 through a three-kilohm (3-kΩ resistor 34 and a second voltage (Vin) input terminal 14C of the integrated circuit 14. The resistor 34 functions as a load element.
The Hall bias circuit 32 feeds current to the Hall element 30 by driving the base (B) of an npn bipolar transistor 36 connected as a switching element or current regulating element in series with the resistor 32. The npn bipolar transistor 36 is connected as an emitter follower: its collector (C) is connected to the second voltage input terminal 14C and the power input terminal 32A of the Hall bias circuit 32; its emitter (E) is connected to one current terminal 30A of the Hall element 30. The other current terminal 30B of the Hall element 30 is connected to ground.
The Hall bias circuit 32 and npn bipolar transistor 36 operate together as a Hall bias current feeding circuit.
The Hall element 30 has a pair of voltage signal output terminals 30C, 30D from which it outputs a complementary pair of periodic signals (normally, sinewave signals) with periods corresponding to the rotational period of the rotor of the brushless motor. Because these periodic signals indicate the rotational position of the brushless motor, they will also be referred to as positional signals.
The complementary pair of positional signals are received by the non-inverting input terminal 38A and inverting input terminal 38B of a Hall amplifier 38. Operating on a voltage supplied by the Hall bias circuit 32, the Hall amplifier 38 amplifies the difference between the complementary positional signals and sends the resulting amplified signal to the control circuit 28 as the positional feedback signal mentioned above.
From the amplified positional feedback signal received from the Hall amplifier 38, the control circuit 28 generates the on-off switching signals supplied to the predrivers 24A, 24B, 24C, 24D.
The resistor 34 is a key feature of the novel driving circuit 10 that reduces power dissipation by the Hall bias circuit 32 and npn bipolar transistor 36.
The power supply 12 supplies whatever voltage is needed to power the brushless motor. A comparatively low supply voltage (about 3 V to 5 V) or a comparatively high supply voltage (in the neighborhood of 50 V) may be used according to the specifications of the brushless motor. When a supply voltage in the comparatively high range is used, without resistor 34, the Hall bias circuit 32 and npn bipolar transistor 36 would dissipate too much power to be packaged as part of the integrated circuit 14. Insertion of the resistor 34 reduces power dissipation by the Hall bias circuit 32 and npn bipolar transistor 36 by reducing the voltage (Vin) they receive.
The operation of the embodiment will now be described with reference to
The first waveform A in
The second waveform B is a frequency generator (FG) signal generated by the control circuit 28 from the output of the Hall amplifier 38. The control circuit 28 switches the FG signal between high (5 V) and low (0 V) voltage levels at zero-crossing points of waveform A. The FG signal may be output from the integrated circuit 14, although for simplicity, this is not shown in
The control circuit 28 also generates complementary output signals OUT1 and OUT2. OUT1 is supplied to predrivers 24A and 24D and OUT2 is supplied to predrivers 24B and 24C. The predrivers respond by supplying output signals OUT1P, OUT1N, OUT2P, and OUT2N to the gates of NMOS transistors 18A, 18B, 18C, 18D, respectively, in the H-bridge. The NMOS transistors conduct current between their source and drain terminals when their gate inputs are high. The high level is given as 12 V in
The waveforms of the predriver output signals are shown as waveforms C1 to C3 in
During period Tj in
The Hall bias voltage is the emitter voltage of the npn bipolar transistor 36. Since transistor 36 operates as an emitter follower, its emitter voltage differs by a small and substantially constant amount from the base voltage supplied by the Hall bias circuit 32. The collector voltage of transistor 36 is the reduced voltage Vin produced by the voltage drop that occurs when current flows through the resistor 34.
When the supply voltage Vcc output from the power supply 12 at 50 V, for example, if the Hall bias voltage is 3 V, the Hall bias current is 10 mA, the total current consumed by the other control circuits in the integrated circuit 14 is 3 mA, and the resistor 34 connected to the collector of the npn bipolar transistor 36 has a resistance of 3 kΩ, the voltage drop in the resistor 34 is 39 V. The collector voltage Vin of transistor 36 is therefore only 11 V.
The total power dissipation by the Hall element 30 and the Hall bias circuit 32, transistor 36, and the other control circuits in the integrated circuit 14 is then about 0.14 W (approximately 13 mA×11 V). The total power dissipation by the Hall bias circuit 32 is reduced to about one-fifth the total power (0.65 W) that would be dissipated in the conventional driving circuit S in
Referring to
The Hall bias circuit 32 itself dissipates some additional power by operating on Vcc instead of Vin, but the amount is not large, because the base current the Hall bias circuit 32 supplies to the npn bipolar transistor 36 is much less than the 10 mA emitter-collector current.
Referring to
In a third variation (not separately illustrated), the Hall element 30 is internal to the integrated circuit 14. The npn bipolar transistor 36 may be either internal to the integrated circuit 14, as in
In a fourth variation, the resistor 34 is replaced by another type of load element, such as an inductive load element or an energy-conversion element. Energy-conversion elements that can be used as load elements include heating elements and illumination elements. Any type of load element that produces a voltage drop may be used.
In a fifth variation, the control circuit 28 generates a command signal according to the rotation status of the motor and sends the command signal to the Hall bias circuit 32. The Hall bias circuit 32 controls the npn bipolar transistor 36 according to the command signal, e.g., by switching the npn bipolar transistor 36 on and off.
Those skilled in the art will recognize that further variations are possible within the scope of the invention, which is defined in the appended claims.
Number | Date | Country | Kind |
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2009-068516 | Mar 2009 | JP | national |