Claims
- 1. A method of making a part of a droplet plate, which part mounts to a substrate that carries a heat transducer and defines both a firing chamber to surround the transducer and a nozzle through which liquid in the chamber may pass from the chamber; the method comprising the steps of:
forming the part from a single type of dielectric material by depositing a first layer of the dielectric material; shaping the firing chamber in the first layer; depositing a second layer of the single type of dielectric material; and making the nozzle in the second layer.
- 2. The method of claim 1 wherein forming includes depositing the dielectric material using plasma-enhanced chemical vapor deposition.
- 3. The method of claim 1 wherein the first layer and second layer of dielectric material are selected from the group consisting of silicon dioxide, silicon nitride, silicon carbide, amorphous silicon, silicon oxynitride and diamondlike carbon.
- 4. The method of claim 3 wherein the first layer of dielectric material and the second layer of dielectric material is selected to be the same material.
- 5. A method of making a part of a droplet plate, which part mounts to a substrate that carries a heat transducer and defines both a firing chamber to surround the transducer and a nozzle through which liquid in the chamber may pass from the chamber; the method comprising the steps of:
forming the part from a first dielectric material by depositing a first layer of the dielectric material; shaping the firing chamber in the first layer; then depositing a second layer of the first dielectric material; and making the nozzle in the second layer.
- 6. The method of claim 5 wherein the first layer of dielectric material are selected from the group consisting of silicon dioxide, silicon nitride, silicon carbide, amorphous silicon, silicon oxynitride and diamondlike carbon
- 7. The method of claim 5 including the step of simultaneously exposing the first and second layers to one of an etchant or solvent.
- 8. The method of claim 5 wherein the first dielectric material comprises silicon dioxide.
Parent Case Info
[0001] This is a continuation of U.S. application Ser. No. 10/244,351, which was a continuation of U.S. application Ser. No. 09/556,035, now U.S. Pat. No. 6,482,574.
Continuations (2)
|
Number |
Date |
Country |
Parent |
10244351 |
Sep 2002 |
US |
Child |
10643264 |
Aug 2003 |
US |
Parent |
09556035 |
Apr 2000 |
US |
Child |
10244351 |
Sep 2002 |
US |