Dual free layer magnetic reader having a rear bias structure having a high aspect ratio

Information

  • Patent Grant
  • 9922672
  • Patent Number
    9,922,672
  • Date Filed
    Friday, August 12, 2016
    8 years ago
  • Date Issued
    Tuesday, March 20, 2018
    6 years ago
Abstract
A magnetic read apparatus has an air-bearing surface (ABS) and includes a read sensor and a rear magnetic bias structure. The read sensor includes first and second free layers, a spacer layer and a rear surface opposite to the ABS. The spacer layer is nonmagnetic and between the first and second free layers. The read sensor has a track width in a cross track direction parallel to the ABS. The rear magnetic bias structure magnetically biases the read sensor a stripe height direction perpendicular to the ABS. The read sensor is between the ABS and the rear magnetic bias structure. The rear magnetic bias structure has a width in the cross track direction and a length in the stripe height direction. The length is greater than the width. The width of the rear magnetic bias structure is substantially equal to the track width of the read sensor.
Description
BACKGROUND


FIG. 1 depicts an air-bearing surface (ABS) view of a conventional read transducer used in magnetic recording technology applications. The conventional read transducer 10 includes shields 12 and 18, insulator 14, magnetic bias structures 16, and sensor 20. The read sensor 20 is typically a giant magnetoresistive (GMR) sensor or tunneling magnetoresistive (TMR) sensor. The read sensor 20 includes an antiferromagnetic (AFM) layer 22, a pinned layer 24, a nonmagnetic spacer layer 26, and a free layer 28. Also shown is a capping layer 30. In addition, seed layer(s) may be used. The free layer 28 has a magnetization sensitive to an external magnetic field. Thus, the free layer 28 functions as a sensor layer for the magnetoresistive sensor 20. If the sensor 20 is to be used in a current perpendicular to plane (CPP) configuration, then current is driven in a direction substantially perpendicular to the plane of the layers 22, 24, 26, and 28. Conversely, in a current-in-plane (CIP) configuration, then conductive leads (not shown) would be provided on the magnetic bias structures 16. The magnetic bias structures 16 are used to magnetically bias the free layer 28.


Although the conventional transducer 10 functions, there are drawbacks. The trend in magnetic recording is to higher density memories. The conventional read sensor 20 may not adequately read high density media. As a result, dual free layer magnetic read sensors have been developed. In such read sensors, two free layers that are biased in a scissor state by a hard magnet. The read sensor may not, however, be reliable in such a conventional magnetic reader. Such reliability issues may become particularly acute at high densities and lower track widths on the order of less than or equal to thirty nanometers. For example, in such high density dual free layer readers, the state in which the free layers are biased may be unpredictable. Accordingly, what is needed is a system and method for improving the performance of a magnetic recording read transducer.





BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS


FIG. 1 depicts an ABS view of a conventional magnetic recording read transducer.



FIGS. 2A-2C depicts ABS, plan and side views of an exemplary embodiment of a portion of a dual free layer magnetic read transducer.



FIGS. 3A-3B depict plan and side views of another exemplary embodiment of a portion of a dual free layer magnetic read transducer.



FIGS. 4A-4B depict plan and side views of another exemplary embodiment of a portion of a dual free layer magnetic read transducer.



FIGS. 5A-5B depict plan and side views of another exemplary embodiment of a portion of a dual free layer magnetic read transducer.



FIG. 6 depicts a side view of another exemplary embodiment of a portion of a dual free layer magnetic read transducer.



FIG. 7 depicts a side view of another exemplary embodiment of a portion of a dual free layer magnetic read transducer.



FIG. 8 is flow chart depicting an exemplary embodiment of a method for providing a magnetic recording read transducer.



FIG. 9 is flow chart depicting another exemplary embodiment of a method for providing a magnetic recording read transducer.





DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS


FIGS. 2A-2C depict ABS, plan and side views of an exemplary embodiment of a portion of a magnetic read transducer 100. For clarity, FIGS. 2A-2C are not to scale. The read transducer 100 may be part of a read head or may be part of a merged head that also includes a write transducer. The head of which the read transducer 100 is a part is contained in a disk drive having a media, a slider and the head coupled with the slider. Further, only a portion of the components of the read transducer 100 are depicted.


The transducer 100 includes optional soft magnetic shields 102 and 104, insulator 106, read sensor 110, side bias structures 130 and 150 and rear bias structure 160 that may be separated from the read sensor 110 by an insulating layer 155. The read sensor 110 includes a first free layer 112 and a second free layer 116 separated by a nonmagnetic spacer layer 114. The nonmagnetic spacer layer 114 may be conductive or an insulating tunneling barrier layer, such as MgO. The read sensor 110 is, therefore, a giant magnetoresistive or tunneling magnetoresistive read sensor in the embodiment shown. The free layers 112 and 116 are ferromagnetic and may include multiple layers. The free layers 112 and 116 are biased such that their magnetic moments 113 and 117, respectively are in a scissor mode. Based on the angle between the magnetic moments 113 and 117, the resistance of the read sensor 110 changes. This angle changes when the read 110 is under the influence of an external field, for example due to a bit being read. Thus, the resistance of the read sensor 110 may be used to read data. The read sensor 110 may also be configured for high density recording. Thus, in some embodiments, the track width (TW) of the read sensor 110 is not more than thirty nanometers. In some such embodiments, the track width is not more than twenty nanometers. In the embodiment shown, the shields 102 and 104 and the free layers 112 and 116 all have a stripe height, SH, in the stripe height direction. In other embodiments, however, different structures 102, 104, 112 and 116 may have different stripe heights.


The transducer 100 includes side magnetic bias structures 120 and a rear magnetic bias structure 160 that together magnetically bias the free layers 112 and 116 in a scissor mode. As can be seen in FIGS. 2A and 2B, the side bias structures 120 bias the magnetic moments 113 and 117, respectively, of the free layers 112 and 116, respectively, parallel to the ABS, in the cross-track direction. The magnetic bias structures 120 and free layers 112 and 116 are also configured to bias the magnetic moments 113 and 117 of the free layers 112 and 116, respectively, antiparallel. In some embodiments, the magnetic moments 113 and 117 of the free layers 112 and 116 are antiferromagnetically coupled. The rear magnetic bias structure 160 biases the magnetic moments 113 and 117 of the free layers 112 and 116, respectively, perpendicular to the ABS, in the stripe height direction.


Each bias structure 120 includes two magnetic bias structures 130 and 150 separated by a nonmagnetic structure 140. The first magnetic bias structure 130 magnetically biases the free layer 112 and, therefore, is adjacent to the sides of the free layer in the cross-track direction. Similarly, the second magnetic bias structure 150 magnetically biases the free layer 116 and is thus adjacent to the side of the free layer 116 in the cross-track direction. In the embodiment shown, the top surface of the first magnetic bias structure 130 is not higher than the upper surface of the first free layer 112. However, in other embodiments, the top surface of the magnetic bias structure 130 may be at another location. In some embodiments, the top surface of the first magnetic bias structure 130 is not higher than the lower surface of the second free layer 116. In other embodiments, the top surface of the first magnetic bias structure 130 is not higher than midway between the upper and lower surfaces of the second free layer 116. Although the top of the first magnetic bias structure 130 may be higher than bottom of the second free layer 116, the entire magnetic bias structure 130 is still lower than the second magnetic bias structure 150. Similarly, the bottom surface of the second magnetic bias structure 150 is not lower than the lower surface of the second free layer 116 in the embodiment depicted in FIGS. 2A-2C. However, in other embodiments, the bottom surface of the magnetic bias structure 150 may be at another location. For example, the bottom surface of the second magnetic bias structure 150 may not be lower than the upper surface of the first free layer 112. In other embodiments, the bottom surface of the magnetic structure 150 is not lower than midway between the upper and lower surfaces of the first free layer 112. Although the bottom of the second magnetic bias structure 150 may be lower than upper surface of the first free layer 112, the entire magnetic bias structure 150 is still higher than the first magnetic bias structure 130.


The magnetic bias structures 130 and 150 may take various forms. In some embodiments, both the first magnetic bias structure 130 and the second magnetic bias structure 150 are soft magnetic structures. For example, the magnetic bias structures 130 and 150 may be an alloy, multilayer or other structure that has a coercivity of not more than ten Oe. In some such embodiments, the soft magnetic bias structure(s) 130 and/or 150 have a coercivity of not more than five Oe. For example, the magnetic bias structures 130 and 150 may include CoFe and/or NiFe. In other embodiments, the magnetic bias structures 130 and/or 150 may have different magnetic properties. In some embodiments, the magnetic bias structure 130 and/or 150 may be a hard bias structure. For example, the first magnetic bias structure 130 may be an alloy or multilayer that has a sufficiently high coercivity to have its magnetic moment 132 substantially unchanged during operation of the transducer 100. In other embodiments, the first magnetic bias structure 130 may be a pinned structure. In such an embodiment, the first magnetic bias structure 130 may include a pinning layer, such as an antiferromagnetic (AFM) layer and a soft magnetic layer adjoining the pinning layer. In still other embodiments, the magnetic bias structure 130 and 150 may be configured in another manner. For example, the shield 102 is shown as being overmilled to allow for the soft bias structures 130 and 150. However, in other embodiments, the shield 102 may not be overmilled.


The first magnetic bias structure 130 may have a magnetic moment 132. The second magnetic bias structure 152 may have a magnetic moment 152. As can be seen in FIG. 2B, the magnetic moments 132 and 152 are antiferromagnetically aligned. Stated differently, the steady state orientation of the magnetic moments 132 and 152 is antiparallel. In some embodiments, the bias structures 130 and 150, and thus the magnetic moments 132 and 152, are antiferromagnetically coupled. Because of the orientations of the magnetic moments 132 and 152, the magnetic moment 113 of the first free layer 112 is biased in one direction, while the magnetic moment 117 of the second free layer 116 is biased in the opposite direction.


The magnetic transducer 100 also includes a rear magnetic bias structure 160. The rear bias structure may be a soft magnetic bias structure, a hard magnetic bias structure, or include both soft and hard magnetic bias structures. For example, a hard magnetic bias structure may be a magnetic structure having a coercivity of greater than one hundred Oersted. In some embodiments, the hard magnetic bias structure coercivity is at least one thousand Oersted. In contrast, a soft magnetic bias structure may have a coercivity of less than one hundred Oersted. In some embodiments, the soft magnetic bias structure coercivity is not more than ten Oersted. The hard and soft bias structure may include single alloys, multiple layer(s), a mixed-composition alloy and/or other components. Other components, such as a pinning structure, may be included in the rear bias structure 160. A pinning structure is a magnetic component used to magnetically bias other portions of the rear magnetic bias structure 160. For example, the pinning structure might be an antiferromagnetic (AFM) layer.


The read sensor 110 is between the rear bias structure 160 and the ABS. Further, an insulating layer 155 may separate the rear bias structure 160 from the sensor 110 and bias structures 120. Such an insulating layer 155 may be used if the rear bias structure 160 is conductive. In addition, although the shields 102 and 104 are shown as extending only to the stripe height of the sensor 110, the shields 102 and 104 generally extend significantly further in the stripe height direction. However, the shields 102 and 104 are also magnetically decoupled from the rear bias structure 160. Thus, the insulating layer 155 and a top insulating (not shown) may extend along the depth of the rear bias structure 160. For example, in some embodiments, the insulating layer 155 is at least ten Angstroms and not more than forty Angstroms thick. The insulating layer 155 is also nonmagnetic. Thus, the read sensor 110 may be electrically insulated from the rear bias structure 160 and not exchanged coupled with the rear soft bias structure 160. Although not depicted in FIGS. 2A-2C, an insulating capping layer may also be provided on top of the rear bias structure 160.


The rear bias structure 160 is shown having a width, w, in the cross-track direction; a length, l, in the stripe height direction and a thickness, t, in the down track direction. The width of the rear bias structure 160 is substantially equal to the track width, TW, of the read sensor 110. In some embodiments, this is because the sensor 110 and rear bias structure 160 are defined in the cross-track direction using a single mask. Stated differently, the rear bias structure 160 and sensor 110 may be self-aligned. In addition, the length, l, is greater than the width (l>w). Thus, the rear bias structure 160 has a shape anisotropy that is perpendicular to the ABS.


The magnetic moment 162 of the rear bias structure 160 is used to bias the sensor 110 in the stripe height direction. Consequently, the rear bias structure 160 has a magnetic anisotropy in the stripe height direction. This anisotropy may arise from one or more effects. For example, the rear bias structure 160 may have a shape anisotropy. In some embodiments, the length is at least four multiplied by the width. In some such embodiments, the length is at least ten multiplied by the width. The rear bias structure 160 may have a crystalline anisotropy that favors a perpendicular-to-ABS orientation of the magnetic moment 162. The rear bias structure 160 may have a magnetic anisotropy due to deposition in a magnetic field. In some embodiments, the rear bias structure 160 may have a magnetoelastic anisotropy, for example due to magnetostriction. In other embodiments, a pinning layer (not shown in FIGS. 2A-2C) or other structure (not shown) may be used to induce the magnetic anisotropy in the rear bias structure 160. In some embodiments, such a magnetic anisotropy is consistent with a reversal field of at least one thousand Oersted. In some such embodiments, the reversal field is at least five thousand Oersted.


Further, the rear bias structure 160 provides sufficient moment to bias the magnetic moments 113 and 117 of the free layers 112 and 116, respectively. For example, in some embodiments, the rear soft bias structure has a saturation magnetization-thickness product of at least one milli-emu/cm2 and not more than three milli-emu/cm2. In some such embodiments, the saturation magnetization-thickness product is not more than two milli-emu per cm2. The thickness used in the saturation magnetization-thickness product is t, the depth of the rear bias structure 160 in the down track direction.


The magnetic transducer 100 may be suitable for use in high density magnetic recording applications, for example those having a sensor track width (and thus rear bias structure 160 width) of not more than thirty nanometers. In some embodiments, the track width and rear bias structure width may be not greater than twenty nanometers. The read sensor 110 may not include an antiferromagnetic layer or a pinned layer. Consequently, the shield-to-shield spacing (SS1) between the shields 102 and 104 may be reduced. The use of the scissor mode may also enhance the read signal. This scissor mode may be more reliably achieved because of the presence of the rear bias structure 160. In particular, the shape anisotropy, width and other aspects of the rear bias structure 160 may allow for more reliable biasing of the read sensor. The desired scissor mode may be achieved and performance may be improved.



FIGS. 3A and 3B depict various views of another embodiment of a magnetic read transducer 100′. FIG. 3A depicts a plan view of an exemplary embodiment of the transducer 100′. FIG. 3B depicts a side view of the transducer 100′. For clarity, FIGS. 3A and 3B are not to scale. The read transducer 100′ may be part of a read head or may be part of a merged head that also includes a write transducer. The head of which the read transducer 100′ is a part is part of a disk drive having a media, a slider and the head coupled with the slider. The transducer 100′ corresponds to the transducer 100. Consequently, analogous components are labeled similarly. For example, the transducer 100′ includes a read sensor 110 having free layers 112 and 116 separated by a nonmagnetic spacer layer 114 that are analogous to such structures in the transducer 100. Thus, the components 102, 104, 110, 112, 114116, 155 and 160′ have a similar structure and function to the components 102, 104, 110, 112, 114116, 155 and 160, respectively, depicted in FIGS. 2A-2C. Further, although an ABS view is not shown, the transducer 100′ may appear substantially the same from the ABS as the transducer 100. The transducer 100′ may also include structures analogous to the structures 120, 130, 140 and 150 depicted in FIGS. 2A-2C.


In the embodiment shown in FIGS. 3A-3B, the rear bias structure 160′ consists of a rear soft bias structure 160′. Thus, the coercivity of the rear bias structure 160′ is less than one hundred Oe. In some such embodiments, the coercivity of the rear soft bias structure 160′ is less than ten Oe. The rear soft bias structure 160′ may be configured such that the magnetization 162 is stable perpendicular to the ABS. For example, the rear soft bias structure 160′ may have a magnetic anisotropy such that the magnetization 162 is stable during operation of the magnetic read transducer 100′. For example, a shape anisotropy may be used to stabilize the magnetization 162. In some embodiments, the length, l, of the rear soft bias structure 160′ may be much greater than the width, w, or height, t. In the embodiment shown, the height, t, of the rear soft bias structure 160′ is shown as the same as that of the read sensor 110. However, the heights may differ. However, the width of the rear soft bias structure 160′ is substantially the same as the track width of the sensor 110 (TW=w to within processing limitations). In some embodiments the length is at least four times the width (I≥4w). In some such embodiments, the length is at least ten multiplied by the width (I≥10w).


The magnetic transducer 100′ shares the benefits of the magnetic transducer 100. Performance and biasing of the sensor 110 may thus be improved.



FIGS. 4A and 4B depict various views of another embodiment of a magnetic read transducer 100″. FIG. 4A depicts a plan view of an exemplary embodiment of the transducer 100″. FIG. 4B depicts a side view of the transducer 100″. For clarity, FIGS. 4A and 4B are not to scale. The read transducer 100″ may be part of a read head or may be part of a merged head that also includes a write transducer. The head of which the read transducer 100″ is a part is part of a disk drive having a media, a slider and the head coupled with the slider. The transducer 100″ corresponds to the transducer 100. Consequently, analogous components are labeled similarly. For example, the transducer 100″ includes a read sensor 110 having free layers 112 and 116 separated by a nonmagnetic spacer layer 114 that are analogous to such structures in the transducer 100. Thus, the components 102, 104, 110, 112, 114116, 155 and 160″ have a similar structure and function to the components 102, 104, 110, 112, 114116, 155 and 160, respectively, depicted in FIGS. 2A-2C. Further, although an ABS view is not shown, the transducer 100″ may appear substantially the same from the ABS as the transducer 100/100′. The transducer 100″ may also include structures analogous to the structures 120, 130, 140 and 150 depicted in FIGS. 2A-2C.


In the embodiment shown in FIGS. 4A-4B, the rear bias structure 160″ consists of a rear hard bias structure 160″. Thus, the coercivity of the rear bias structure 160′ is greater than one hundred Oe. In some such embodiments, the coercivity of the rear hard bias structure 160″ is greater than one thousand Oe. The rear hard bias structure 160″ may be configured such that the magnetization 162″ is stable perpendicular to the ABS. For example, the rear hard bias structure 160″ may have an anisotropy such that the magnetization 162″ is stable during operation of the magnetic read transducer 100″. For example, a shape anisotropy may be used to stabilize the magnetization 162″. In some embodiments, the length, l, of the rear hard bias structure 160″ may be much greater than the width, w, or height, t. In the embodiment shown, the height, t, of the rear hard bias structure 160″ is shown as the same as that of the read sensor 110. However, the heights may differ. However, the width of the rear hard bias structure 160″ is substantially the same as the track width of the sensor 110 (TW=w to within processing limitations). In some embodiments the length is at least four times the width (l≥4w). In some such embodiments, the length is at least ten multiplied by the width (l≥10w).


The magnetic transducer 100″ shares the benefits of the magnetic transducer 100. Performance and biasing of the sensor 110 may thus be improved.



FIGS. 5A and 5B depict another embodiment of a magnetic read transducer 100′″. FIG. 5A depicts a plan view of an exemplary embodiment of the transducer 100′″. FIG. 5B depicts a side view of the transducer 100′″. For clarity, FIGS. 5A and 5B are not to scale. The read transducer 100′″ may be part of a read head or may be part of a merged head that also includes a write transducer. The head of which the read transducer 100′″ is a part is part of a disk drive having a media, a slider and the head coupled with the slider. The transducer 100′″ corresponds to the transducer(s) 100, 100′ and/or 100″. Consequently, analogous components are labeled similarly. For example, the transducer 100′″ includes a read sensor 110 having free layers 112 and 116 separated by a nonmagnetic spacer layer 114 that are analogous to such structures in the transducer(s) 100, 100′ and/or 100″. Thus, the components 102, 104, 110, 112, 114116, 155, 160′″ have a similar structure and function to the components 102, 104, 110, 112, 114116, 155, 160/160′/160″, respectively, depicted in FIGS. 2A-3B. Further, although an ABS view is not shown, the transducer 100′″ may appear substantially the same from the ABS as the transducer 100. The transducer 100′″ may also include structures analogous to the structures 120, 130, 140 and 150 depicted in FIGS. 2A-2C.


The rear bias structure 160′″ includes at least a rear soft bias structure 170 and a rear hard bias structure 180. The rear soft bias structure 170 is between the rear hard bias structure 180 and the sensor 110 as well as between the rear hard bias structure 180 and the ABS. The rear hard bias structure 180 may be a hard magnetic alloy, for example having a coercivity analogous to that discussed above for structure 160″. For example, a CoPt alloy might be used. In other embodiments, the rear bias structure 180 may be a multilayer or other structure that functions as a hard bias structure.


The rear soft bias structure 170 is a soft bias structure. Thus, the coercivity of the rear soft bias structure 170 is analogous to that of the rear bias structure 160′. Further, the rear soft bias structure 170 provides sufficient moment to bias the magnetic moments 113 and 117 of the free layers 112 and 116, respectively. For example, in some embodiments, the rear soft bias structure has a saturation magnetization-thickness product of at least one milli-emu/cm2 and not more than three milli-emu/cm2. In some such embodiments, the saturation magnetization-thickness product is not more than two milli-emu per cm2. The thickness used in the saturation magnetization-thickness product is t, the depth of the rear soft bias structure 170 in the down track direction.


The rear soft bias structure 170 has a magnetic moment 172 that biases the free layers 112 and 116 in a direction perpendicular to the bias direction from the magnetic bias structures 130 and 150. In the embodiment shown, this direction is perpendicular to the ABS. Similarly, the rear hard bias structure 180 has a magnetic moment 182 in a direction perpendicular to the ABS. Without the rear bias structure 160, the free layers 112 and 116 may be biased antiparallel. However, because the structures 130, 150 and 160 all magnetically bias the free layers 112 and 116, the free layers 112 and 116 are biased such that the magnetic moments 113 and 117 are in a scissor mode.


In some embodiments, the rear hard bias structure 180 is separated from the rear soft bias structure 170 by the nonmagnetic layer 162. The nonmagnetic layer 162 may be conductive. In some embodiments, the thickness of the nonmagnetic layer 162 in the stripe height direction is at least ten Angstroms and not more than forty Angstroms.


In the embodiment shown in FIGS. 5A-5B, the rear hard bias structure 180 and rear soft bias structure 170 have similar geometries. In particular, the thicknesses are the same. However, in other embodiments, the thicknesses may differ. In the embodiment shown, the rear soft bias structure 170 has a length, d1 in the stripe height direction, while the hard bias structure 180 has length d2 in the stripe height direction. The total length, l, of the structure has an analogous relationship to the width, w, as described above. Further, the width of the structure 160′″ is the same as the track width of the sensor (w=TW to within processing tolerances). The rear bias structures 170 and 180 have their magnetic moments 172 and 182, respectively, perpendicular to the ABS to bias the free layers 112 and 116 into a scissor state.


The magnetic transducer 100′″ shares the benefits of the magnetic transducer(s) 100 and/or 100′. Further, omission of the nonmagnetic layer 162 between the soft bias structure 170 and the hard bias structure 180 may improve coupling between the structures 170 and 180. Performance and biasing of the sensor 110 may thus be improved.



FIG. 6 depicts a side view of another embodiment of a magnetic read transducer 100″″. For clarity, FIG. 6 is not to scale. The read transducer 100″″ may be part of a read head or may be part of a merged head that also includes a write transducer. The head of which the read transducer 100″″ is a part is part of a disk drive having a media, a slider and the head coupled with the slider. The transducer 100″″ corresponds to the transducer(s) 100, 100′, 100″ and/or 100′″. Consequently, analogous components are labeled similarly. For example, the transducer 100″″ includes a read sensor 110 having free layers 112 and 116 separated by a nonmagnetic spacer layer 114 that are analogous to such structures in the transducer 100. Thus, the components 102, 104, 110, 112, 116, 155 and 160″″ have a similar structure and function to the components 102, 104, 110, 112, 116, 155 and 160/160′/160″/160′″, respectively, depicted in FIGS. 2A-5B. Further, although an ABS view is not shown, the transducer 100″″ may appear substantially the same from the ABS as the transducer 100/100′. The transducer 100″″ may also include structures analogous to the structures 120, 130, 140 and 150 depicted in FIGS. 2A-2C.


In the embodiment shown in FIG. 6, the rear bias structure 160″″ includes a rear bias layer 160′/160″/160′″ and pinning structure 190. The rear bias layer 160′/160″/160′″ may be any one of a soft magnetic bias structure, a hard magnetic bias structure and a combination of soft and hard magnetic bias structures. The rear bias layer 160′/160″/160′″ may be a single alloy layer, a multilayer, or another structure. The rear bias layer 160′/160″/160′″ also has an anisotropy, as discussed above. For example, the length, l, of the rear bias layer 160′/160″/160′″ may be much greater than the width or height, t. In the embodiment shown, the height, t, of the rear bias layer 160′/160″/160′″ is shown as the same as that of the read sensor 110. However, the heights may differ. However, the width of the rear bias layer 160′/160″/160′″ is the same as the track width of the sensor 110.


In addition, the rear bias structure 160″″ includes the pinning layer 190. In some embodiments, the pinning layer 190 is an AFM, such as IrMn. For generality the depth, d3, of the pinning structure 190 is shown different from that of the rear bias layers 160′/160″/160′″. However, in other embodiments, the depths may be the same. The pinning layer 190 is exchange coupled to the rear bias layer 160′/160″/160′″. As a result, the pinning layer 190 may aid in stabilizing the direction of the magnetic moment 162 of the rear bias layer 160′/160″/160′″. For example, the pinning layer 190 may assist in returning the magnetic moment 162 to the desired direction shown in FIG. 6 in the event of a reversal.


The magnetic transducer 100″″ shares the benefits of the magnetic transducer(s) 100, 100′, 100″ and/or 100′″. Performance and biasing of the sensor 110 may thus be improved.



FIG. 7 depicts a side view of another embodiment of a magnetic read transducer 100′″″. For clarity, FIG. 7 is not to scale. The read transducer 100′″″ may be part of a read head or may be part of a merged head that also includes a write transducer. The head of which the read transducer 100′″″ is a part is part of a disk drive having a media, a slider and the head coupled with the slider. The transducer 100′″″ corresponds to the transducer(s) 100, 100′, 100″, 100′″ and/or 100″″. Consequently, analogous components are labeled similarly. For example, the transducer 100′″″ includes a read sensor 110 having free layers 112 and 116 separated by a nonmagnetic spacer layer 114 that are analogous to such structures in the transducer 100. Thus, the components 102, 104, 110, 112, 116, 155 and 160′″″ have a similar structure and function to the components 102, 104, 110, 112, 116, 155 and 160/160′/160″/160′″/160″″, respectively, depicted in FIGS. 2A-6. Further, although an ABS view is not shown, the transducer 100′″″ may appear substantially the same from the ABS as the transducer 100. The transducer 100′″″ may also include structures analogous to the structures 120, 130, 140 and 150 depicted in FIGS. 2A-2C.


In the embodiment shown in FIG. 7, the rear bias structure 160′″″ includes a rear bias layer 160′/160″/160′″ and pinning structure 190′. The rear bias layer 160′/160″/160′″ may be any one of a soft magnetic bias structure, a hard magnetic bias structure and a combination of soft and hard magnetic bias structures. The rear bias layer 160′/160″/160′″ may be a single alloy layer, a multilayer, or another structure. The rear bias layer 160′/160″/160′″ also has an anisotropy, as discussed above. For example, the length, l, of the rear bias layer 160′/160″/160′″ may be much greater than the width or height, t. In the embodiment shown, the height, t, of the rear bias layer 160′/160″/160′″ is shown as the same as that of the read sensor 110. However, the heights may differ. However, the width of the rear bias layer 160′/160″/160′″ is the same as the track width of the sensor 110.


In addition, the rear bias structure 160′″″ includes the pinning layer 190′. The pinning layer 190′ is analogous to the pinning layer 190. However, the pinning layer 190′ is below the rear bias layer 160′/160″/160′″. Thus, the region behind the read sensor 110 may be overmilled. In some embodiments, the pinning layer 190′ is an AFM, such as IrMn. The pinning layer 190′ is exchange coupled to the rear bias layer 160′/160″/160′″. Depth, l, of the pinning structure 190 is shown as the same as that of the rear bias layers 160′/160″/160′″. However, in other embodiments, the depths may be different. As a result, the pinning layer 190′ may aid in stabilizing the direction of the magnetic moment 162 of the rear bias layer 160′/160″/160′″. For example, the pinning layer 190′ may assist in returning the magnetic moment 162 to the desired direction shown in FIG. 7 in the event of a reversal.


The magnetic transducer 100′″″ shares the benefits of the magnetic transducer(s) 100, 100′, 100″, 100′″ and/or 100″″. Performance and biasing of the sensor 110 may thus be improved.


The magnetic transducers 100, 100′, 100″, 100′″, 100″″ and 100′″″ have been shown with various configurations to highlight particular features, such as differences in geometries. One of ordinary skill in the art will readily recognize that two or more of these features may be combined in various manners consistent with the method and system described herein that are not explicitly depicted in the drawings.



FIG. 8 is an exemplary embodiment of a method 200 for providing a read transducer. For simplicity, some steps may be omitted, interleaved, combined, have multiple substeps and/or performed in another order unless otherwise specified. The method 200 is described in the context of providing a magnetic recording disk drive and transducer 100. However, the method 200 may be used in fabricating the transducer 100′, 100″, 100′″, 100″″ and/or 100′″″. The method 200 may be used to fabricate multiple magnetic read heads at substantially the same time. The method 200 may also be used to fabricate other magnetic recording transducers. The method 200 is also described in the context of particular layers. A particular layer may include multiple materials and/or multiple sub-layers. The method 200 is described in the context of a disk drive. However, the method may be used in other applications employing a magnetoresistive and bias structures. The method 200 also may start after formation of other portions of the magnetic recording transducer.


The read sensor 110 is provided, via step 202. Step 202 may include depositing a stack of layers for the read sensor and defining the read sensor in the cross-track and stripe height directions. Further, the shield 102 and insulating layer 106 may also be provided. The rear bias structure 160 is provided, via step 204. Step 204 may be performed after the sensor 110 has been defined in at least the stripe height direction. Thus, at least part of step 204 is performed after at least part of step 202. Steps 202 and 204 also include defining the read sensor 110 and rear magnetic bias structure 160 in the track width direction such that the track width of the read sensor 110 and width of the rear magnetic bias structure 160 are the same. In some embodiments, the track width of the read sensor 110 and the width of the rear magnetic bias structure 160 are defined together.


The side bias structures 120 are provided, via step 206. Step 206 is performed after the read sensor is defined in the cross-track direction in step 202. Thus, at least part of step 202 is performed before step 204. Step 204 may include depositing the insulating layer 106, depositing the material(s) for the magnetic bias structures 130 and 170. A mill step and planarization, such as a chemical mechanical planarization (CMP) may also be performed.


Using the method 200, the transducers 100, 100′, 100″, 100′″, 100″″ and/or 100′″″ may be fabricated. Thus, the benefits of one or more of the transducers 100, 100′, 100″, 100′″, 100″″ and/or 100′″″ may be achieved. Consequently, biasing of the free layers 112 and 116 in the read sensor 110 may be improved.



FIG. 9 is an exemplary embodiment of a method 210 for providing a rear bias structure of a read transducer. For simplicity, some steps may be omitted, interleaved, combined, have multiple substeps and/or performed in another order unless otherwise specified. The method 210 is described in the context of providing a magnetic recording disk drive and transducer 100. However, the method 210 may be used in fabricating the transducer 100′, 100″, 100′″, 100″″ and/or 100′″″. The method 210 may be used to fabricate multiple magnetic read heads at substantially the same time. The method 210 may also be used to fabricate other magnetic recording transducers. The method 210 is also described in the context of particular layers. A particular layer may include multiple materials and/or multiple sub-layers. The method 210 is described in the context of a disk drive. However, the method may be used in other applications employing a magnetoresistive and bias structures. The method 210 also may start after formation of other portions of the magnetic recording transducer.


The read sensor stack is deposited, via step 212. Step 212 includes depositing the free layer 112, depositing the nonmagnetic layer 114 and depositing the free layer 116. The read sensor 110 is defined in the stripe height direction, via step 214. In some embodiments, step 214 occurs before the read sensor is defined in the cross-track direction. Step 214 may include masking and ion milling the read sensor stack. Thus, space may be made for the rear bias structure 160/160′/160″/160′″/160″″/160″″. The insulating layer 155 is provided, via step 216. The pinning layer 190/190′ may optionally be provided, via step 218.


The rear bias structure 160 is deposited, via step 220. Step 220 may include depositing one or more layer(s) for the rear bias structure 160. Step 220 may, for example, include depositing soft magnetic layer(s), hard magnetic layer(s) or both.


The rear soft bias structure 160 and the read sensor 110 may be defined in the cross track direction, via step 222. Thus, the rear soft bias structure 160 and the read sensor 110 are self-aligned and have matching track width/width.


An insulating layer 106 may be provided, via step 224. The side bias structures 120 may then be provided, via step 226.


Thus, the magnetic transducer 100 may be fabricated. The method 220 may also be used to fabricate the transducer(s) 100′, 100″, 100′″, 100″″ and/or 100′″″. Thus, the benefits of one or more of the transducers 100, 100′, 100″, 100′″, 100″″ and/or 100′″″ may be achieved. Consequently, biasing of the free layers 112 and 116 in the read sensor 110 may be improved.

Claims
  • 1. A magnetic read apparatus having an air-bearing surface (ABS), the magnetic read apparatus comprising: a read sensor comprising a first free layer, a spacer layer, and a second free layer, the spacer layer being nonmagnetic and residing between the first free layer and the second free layer, the read sensor having a rear surface opposite to the ABS, at least one side surface and a track width in a cross-track direction;a rear magnetic bias structure configured to magnetically bias the read sensor in a stripe height direction perpendicular to the ABS, the read sensor being between the ABS and the rear magnetic bias structure, the rear magnetic bias structure having a width in the cross-track direction and a length in the stripe height direction, the length being greater than the width, the width of the rear magnetic bias structure being substantially equal to the track width of the read sensor, the rear magnetic bias structure including a rear hard magnetic bias structure having a hard bias coercivity of greater than one hundred Oersted;an insulating layer between the read sensor and the rear hard magnetic bias structure; anda side magnetic bias structure adjacent to each of the at least one side surface, the side magnetic bias structure comprising a first magnetic bias structure adjacent to a side surface of the first free layer in the cross-track direction and a second magnetic bias structure adjacent to a side surface of the second free layer in the cross-track direction, wherein the first magnetic bias structure and the second magnetic bias structure are separated by a non-magnetic structure.
  • 2. The magnetic read apparatus of claim 1 wherein the rear magnetic bias structure has a reversal field of at least one thousand Oersted.
  • 3. The magnetic read apparatus of claim 2 wherein the reversal field is at least five thousand Oersted.
  • 4. The magnetic read apparatus of claim 1 wherein the track width of the read sensor is not more than thirty nanometers.
  • 5. The magnetic read apparatus of claim 4 wherein the track width of the read sensor is not more than twenty nanometers.
  • 6. The magnetic read apparatus of claim 1 wherein the hard bias coercivity is greater than one thousand Oersted.
  • 7. The magnetic read apparatus of claim 1 wherein the rear magnetic bias structure includes: a pinning layer coupled to the rear hard bias structure.
  • 8. The magnetic read apparatus of claim 1 wherein the side magnetic bias structure is configured to magnetically bias the first free layer and the second free layer to be antiferromagnetically aligned, and wherein the first magnetic bias structure and the second magnetic bias structure are antiferromagnetically aligned.
  • 9. The magnetic read apparatus of claim 1 wherein the length of the rear magnetic bias structure is at least four times the width.
  • 10. The magnetic read apparatus of claim 9 wherein the length of the rear magnetic bias structure is at least ten times the width.
  • 11. The magnetic read apparatus of claim 1 further comprising an additional insulating layer between the side magnetic bias structure and the read sensor.
  • 12. The magnetic read apparatus of claim 1, wherein the rear hard magnetic bias structure is conductive.
  • 13. The magnetic read apparatus of claim 1, wherein the insulating layer includes: a first surface between the read sensor and the rear magnetic bias structure, anda second surface along the stripe height direction on a side of the rear magnetic bias structure, one end of the second surface coupled to the first surface.
  • 14. A disk drive comprising: at least one slider comprising at least one magnetic transducer having an air-bearing surface (ABS), the at least one magnetic transducer comprising a read sensor and a rear magnetic bias structure, the read sensor comprising a first free layer, a spacer layer, and a second free layer, the spacer layer being nonmagnetic and residing between the first free layer and the second free layer, the read sensor having a rear surface opposite to the ABS, at least one side surface and a track width in a cross-track direction, the rear magnetic bias structure being configured to provide a magnetic bias to the read sensor in a stripe height direction perpendicular to the ABS, the read sensor being between the ABS and the rear magnetic bias structure, the rear magnetic bias structure having a width in the cross-track direction and a length in the stripe height direction, the length being greater than the width, the width of the rear magnetic bias structure being substantially equal to the track width of the read sensor, the rear magnetic bias structure including a rear hard magnetic bias structure having a hard bias coercivity of greater than one hundred Oersted, the at least one magnetic transducer further comprising an insulating layer between the read sensor and the rear hard magnetic bias structure, and a side magnetic bias structure adjacent to each of the at least one side surface, the side magnetic bias structure comprising a first magnetic bias structure adjacent to a side surface of the first free layer in the cross-track direction and a second magnetic bias structure adjacent to a side surface of the second free layer in the cross-track direction, wherein the first magnetic bias structure and the second magnetic bias structure are separated by a non-magnetic structure.
  • 15. The disk drive of claim 14, wherein the rear hard magnetic bias structure is conductive.
  • 16. A magnetic read apparatus having an air-bearing surface (ABS), the magnetic read apparatus comprising: a read sensor comprising a first free layer, a spacer layer, and a second free layer stacked in a first direction, the spacer layer being nonmagnetic and disposed between the first free layer and the second free layer, the read sensor having a rear surface opposite to the ABS;a rear magnetic bias structure coupled to the rear surface of the read sensor, the rear magnetic bias structure configured to magnetically bias the read sensor in a second direction perpendicular to the ABS, the read sensor disposed between the ABS and the rear magnetic bias structure, the rear magnetic bias structure having a hard bias coercivity of greater than one hundred Oersted, the rear magnetic bias structure having a width along a third direction and a length along the second direction, the length being greater than the width;an insulating layer between the read sensor and the rear magnetic bias structure having the hard bias coercivity of greater than one hundred Oersted; anda side magnetic bias structure on a side surface of the read sensor, the side surface of the read sensor facing in the third direction, the side magnetic bias structure comprising a first side magnetic bias structure to magnetically bias the first free layer and a second side magnetic bias structure to magnetically bias the second free layer.
  • 17. The magnetic read apparatus of claim 16, wherein the rear magnetic bias structure is conductive.
  • 18. The magnetic read apparatus of claim 16, wherein the insulating layer includes: a first surface between the read sensor and the rear magnetic bias structure, anda second surface along the second direction on a side of the rear magnetic bias structure, one end of the second surface coupled to the first surface.
CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a divisional of co-pending U.S. patent application Ser. No. 14/674,899 filed on Mar. 31, 2015, which is a continuation-in-part of U.S. patent application Ser. No. 14/670,340, filed on Mar. 26, 2015, and incorporated herein by reference.

US Referenced Citations (734)
Number Name Date Kind
5434826 Ravipati et al. Jul 1995 A
5576914 Rottmayer et al. Nov 1996 A
6016290 Chen et al. Jan 2000 A
6018441 Wu et al. Jan 2000 A
6025978 Hoshi et al. Feb 2000 A
6025988 Yan Feb 2000 A
6032353 Hiner et al. Mar 2000 A
6033532 Minami Mar 2000 A
6034851 Zarouri et al. Mar 2000 A
6043959 Crue et al. Mar 2000 A
6046885 Aimonetti et al. Apr 2000 A
6049650 Jerman et al. Apr 2000 A
6055138 Shi Apr 2000 A
6058094 Davis et al. May 2000 A
6073338 Liu et al. Jun 2000 A
6078479 Nepela et al. Jun 2000 A
6081499 Berger et al. Jun 2000 A
6094803 Carlson et al. Aug 2000 A
6099362 Viches et al. Aug 2000 A
6103073 Thayamballi Aug 2000 A
6108166 Lederman Aug 2000 A
6118629 Huai Sep 2000 A
6118638 Knapp et al. Sep 2000 A
6125018 Takagishi Sep 2000 A
6130779 Carlson et al. Oct 2000 A
6134089 Barr et al. Oct 2000 A
6136166 Shen et al. Oct 2000 A
6137661 Shi et al. Oct 2000 A
6137662 Huai et al. Oct 2000 A
6160684 Heist et al. Dec 2000 A
6163426 Nepela et al. Dec 2000 A
6166891 Lederman et al. Dec 2000 A
6173486 Hsiao et al. Jan 2001 B1
6175476 Huai et al. Jan 2001 B1
6178066 Barr Jan 2001 B1
6178070 Hong et al. Jan 2001 B1
6178150 Davis Jan 2001 B1
6181485 He Jan 2001 B1
6181525 Carlson Jan 2001 B1
6185051 Chen et al. Feb 2001 B1
6185077 Tong et al. Feb 2001 B1
6185081 Simion et al. Feb 2001 B1
6188549 Wiitala Feb 2001 B1
6190764 Shi et al. Feb 2001 B1
6193584 Rudy et al. Feb 2001 B1
6195229 Shen et al. Feb 2001 B1
6198608 Hong et al. Mar 2001 B1
6198609 Barr et al. Mar 2001 B1
6201673 Rottmayer et al. Mar 2001 B1
6204998 Katz Mar 2001 B1
6204999 Crue et al. Mar 2001 B1
6212153 Chen et al. Apr 2001 B1
6215625 Carlson Apr 2001 B1
6219205 Yuan et al. Apr 2001 B1
6221218 Shi et al. Apr 2001 B1
6222707 Huai et al. Apr 2001 B1
6229782 Wang et al. May 2001 B1
6230959 Heist et al. May 2001 B1
6233116 Chen et al. May 2001 B1
6233125 Knapp et al. May 2001 B1
6237215 Hunsaker et al. May 2001 B1
6252743 Bozorgi Jun 2001 B1
6255721 Roberts Jul 2001 B1
6258468 Mahvan et al. Jul 2001 B1
6266216 Hikami et al. Jul 2001 B1
6271604 Frank, Jr. et al. Aug 2001 B1
6275354 Huai et al. Aug 2001 B1
6277505 Shi et al. Aug 2001 B1
6282056 Feng et al. Aug 2001 B1
6296955 Hossain et al. Oct 2001 B1
6297955 Frank, Jr. et al. Oct 2001 B1
6304414 Crue, Jr. et al. Oct 2001 B1
6307715 Berding et al. Oct 2001 B1
6310746 Hawwa et al. Oct 2001 B1
6310750 Hawwa et al. Oct 2001 B1
6317290 Wang et al. Nov 2001 B1
6317297 Tong et al. Nov 2001 B1
6322911 Fukagawa et al. Nov 2001 B1
6330136 Wang et al. Dec 2001 B1
6330137 Knapp et al. Dec 2001 B1
6333830 Rose et al. Dec 2001 B2
6340533 Ueno et al. Jan 2002 B1
6349014 Crue, Jr. et al. Feb 2002 B1
6351355 Min et al. Feb 2002 B1
6353318 Sin et al. Mar 2002 B1
6353511 Shi et al. Mar 2002 B1
6356412 Levi et al. Mar 2002 B1
6359779 Frank, Jr. et al. Mar 2002 B1
6369983 Hong Apr 2002 B1
6376964 Young et al. Apr 2002 B1
6377535 Chen et al. Apr 2002 B1
6381095 Sin et al. Apr 2002 B1
6381105 Huai et al. Apr 2002 B1
6389499 Frank, Jr. et al. May 2002 B1
6392850 Tong et al. May 2002 B1
6396660 Jensen et al. May 2002 B1
6399179 Hanrahan et al. Jun 2002 B1
6400526 Crue, Jr. et al. Jun 2002 B2
6404600 Hawwa et al. Jun 2002 B1
6404601 Rottmayer et al. Jun 2002 B1
6404706 Stovall et al. Jun 2002 B1
6410170 Chen et al. Jun 2002 B1
6411522 Frank, Jr. et al. Jun 2002 B1
6417998 Crue, Jr. et al. Jul 2002 B1
6417999 Knapp et al. Jul 2002 B1
6418000 Gibbons et al. Jul 2002 B1
6418048 Sin et al. Jul 2002 B1
6421211 Hawwa et al. Jul 2002 B1
6421212 Gibbons et al. Jul 2002 B1
6424505 Lam et al. Jul 2002 B1
6424507 Lederman et al. Jul 2002 B1
6430009 Komaki et al. Aug 2002 B1
6430806 Chen et al. Aug 2002 B1
6433965 Gopinathan et al. Aug 2002 B1
6433968 Shi et al. Aug 2002 B1
6433970 Knapp et al. Aug 2002 B1
6437945 Hawwa et al. Aug 2002 B1
6445536 Rudy et al. Sep 2002 B1
6445542 Levi et al. Sep 2002 B1
6445553 Barr et al. Sep 2002 B2
6445554 Dong et al. Sep 2002 B1
6447935 Zhang et al. Sep 2002 B1
6448765 Chen et al. Sep 2002 B1
6451514 Iitsuka Sep 2002 B1
6452742 Crue et al. Sep 2002 B1
6452765 Mahvan et al. Sep 2002 B1
6456465 Louis et al. Sep 2002 B1
6459552 Liu et al. Oct 2002 B1
6462920 Karimi Oct 2002 B1
6466401 Hong et al. Oct 2002 B1
6466402 Crue, Jr. et al. Oct 2002 B1
6466404 Crue, Jr. et al. Oct 2002 B1
6466418 Horng et al. Oct 2002 B1
6468436 Shi et al. Oct 2002 B1
6469877 Knapp et al. Oct 2002 B1
6477019 Matono et al. Nov 2002 B2
6479096 Shi et al. Nov 2002 B1
6483662 Thomas et al. Nov 2002 B1
6487040 Hsiao et al. Nov 2002 B1
6487056 Gibbons et al. Nov 2002 B1
6490125 Barr Dec 2002 B1
6496330 Crue, Jr. et al. Dec 2002 B1
6496334 Pang et al. Dec 2002 B1
6504676 Hiner et al. Jan 2003 B1
6512657 Heist et al. Jan 2003 B2
6512659 Hawwa et al. Jan 2003 B1
6512661 Louis Jan 2003 B1
6512690 Qi et al. Jan 2003 B1
6515573 Dong et al. Feb 2003 B1
6515791 Hawwa et al. Feb 2003 B1
6532823 Knapp et al. Mar 2003 B1
6535363 Hosomi et al. Mar 2003 B1
6552874 Chen et al. Apr 2003 B1
6552928 Qi et al. Apr 2003 B1
6577470 Rumpler Jun 2003 B1
6583961 Levi et al. Jun 2003 B2
6583968 Scura et al. Jun 2003 B1
6597548 Yamanaka et al. Jul 2003 B1
6611398 Rumpler et al. Aug 2003 B1
6618223 Chen et al. Sep 2003 B1
6629357 Akoh Oct 2003 B1
6633464 Lai et al. Oct 2003 B2
6636394 Fukagawa et al. Oct 2003 B1
6639291 Sin et al. Oct 2003 B1
6650503 Chen et al. Nov 2003 B1
6650506 Risse Nov 2003 B1
6654195 Frank, Jr. Nov 2003 B1
6657816 Barr et al. Dec 2003 B1
6661621 Iitsuka Dec 2003 B1
6661625 Sin et al. Dec 2003 B1
6674610 Thomas et al. Jan 2004 B1
6680863 Shi et al. Jan 2004 B1
6683763 Hiner et al. Jan 2004 B1
6687098 Huai Feb 2004 B1
6687178 Qi et al. Feb 2004 B1
6687977 Knapp et al. Feb 2004 B2
6691226 Frank, Jr. et al. Feb 2004 B1
6697294 Qi et al. Feb 2004 B1
6700738 Sin et al. Mar 2004 B1
6700759 Knapp et al. Mar 2004 B1
6704158 Hawwa et al. Mar 2004 B2
6707083 Hiner et al. Mar 2004 B1
6713801 Sin et al. Mar 2004 B1
6721138 Chen et al. Apr 2004 B1
6721149 Shi et al. Apr 2004 B1
6721203 Qi et al. Apr 2004 B1
6724569 Chen et al. Apr 2004 B1
6724572 Stoev et al. Apr 2004 B1
6729015 Matono et al. May 2004 B2
6735850 Gibbons et al. May 2004 B1
6737281 Dang et al. May 2004 B1
6744608 Sin et al. Jun 2004 B1
6747301 Hiner et al. Jun 2004 B1
6751055 Alfoqaha et al. Jun 2004 B1
6754049 Seagle et al. Jun 2004 B1
6756071 Shi et al. Jun 2004 B1
6757140 Hawwa Jun 2004 B1
6760196 Niu et al. Jul 2004 B1
6762910 Knapp et al. Jul 2004 B1
6765756 Hong et al. Jul 2004 B1
6775902 Huai et al. Aug 2004 B1
6778358 Jiang et al. Aug 2004 B1
6781927 Heanuc et al. Aug 2004 B1
6785955 Chen et al. Sep 2004 B1
6791793 Chen et al. Sep 2004 B1
6791807 Hikami et al. Sep 2004 B1
6798616 Seagle et al. Sep 2004 B1
6798625 Ueno et al. Sep 2004 B1
6801408 Chen et al. Oct 2004 B1
6801411 Lederman et al. Oct 2004 B1
6803615 Sin et al. Oct 2004 B1
6806035 Atireklapvarodom et al. Oct 2004 B1
6807030 Hawwa et al. Oct 2004 B1
6807332 Hawwa Oct 2004 B1
6809899 Chen et al. Oct 2004 B1
6816345 Knapp et al. Nov 2004 B1
6828897 Nepela Dec 2004 B1
6829160 Qi et al. Dec 2004 B1
6829819 Crue, Jr. et al. Dec 2004 B1
6833979 Knapp et al. Dec 2004 B1
6834010 Qi et al. Dec 2004 B1
6859343 Alfoqaha et al. Feb 2005 B1
6859997 Tong et al. Mar 2005 B1
6861937 Feng et al. Mar 2005 B1
6870712 Chen et al. Mar 2005 B2
6873494 Chen et al. Mar 2005 B2
6873547 Shi et al. Mar 2005 B1
6879464 Sun et al. Apr 2005 B2
6888184 Shi et al. May 2005 B1
6888704 Diao et al. May 2005 B1
6891702 Tang May 2005 B1
6894871 Alfoqaha et al. May 2005 B2
6894877 Crue, Jr. et al. May 2005 B1
6906894 Chen et al. Jun 2005 B2
6909578 Missell et al. Jun 2005 B1
6912106 Chen et al. Jun 2005 B1
6914759 Chen et al. Jul 2005 B2
6934113 Chen Aug 2005 B1
6934129 Zhang et al. Aug 2005 B1
6940688 Jiang et al. Sep 2005 B2
6942824 Li Sep 2005 B1
6943993 Chang et al. Sep 2005 B2
6944938 Crue, Jr. et al. Sep 2005 B1
6944939 Guo et al. Sep 2005 B2
6947258 Li Sep 2005 B1
6950266 McCaslin et al. Sep 2005 B1
6954332 Hong et al. Oct 2005 B1
6958885 Chen et al. Oct 2005 B1
6961221 Niu et al. Nov 2005 B1
6969989 Mei Nov 2005 B1
6975486 Chen et al. Dec 2005 B2
6987643 Seagle Jan 2006 B1
6989962 Dong et al. Jan 2006 B1
6989972 Stoev et al. Jan 2006 B1
7006327 Krounbi et al. Feb 2006 B2
7007372 Chen et al. Mar 2006 B1
7012832 Sin et al. Mar 2006 B1
7016166 Hou et al. Mar 2006 B1
7023658 Knapp et al. Apr 2006 B1
7026063 Ueno et al. Apr 2006 B2
7027268 Zhu et al. Apr 2006 B1
7027274 Sin et al. Apr 2006 B1
7035046 Young et al. Apr 2006 B1
7041985 Wang et al. May 2006 B1
7046490 Ueno et al. May 2006 B1
7054113 Seagle et al. May 2006 B1
7057857 Niu et al. Jun 2006 B1
7059868 Yan Jun 2006 B1
7079361 Sugita et al. Jul 2006 B2
7092195 Liu et al. Aug 2006 B1
7110289 Sin et al. Sep 2006 B1
7111382 Knapp et al. Sep 2006 B1
7113366 Wang et al. Sep 2006 B1
7114241 Kubota et al. Oct 2006 B2
7116517 He et al. Oct 2006 B1
7124654 Davies et al. Oct 2006 B1
7126788 Liu et al. Oct 2006 B1
7126790 Liu et al. Oct 2006 B1
7126795 Funayama et al. Oct 2006 B2
7126797 Hasegawa et al. Oct 2006 B2
7130165 Macken et al. Oct 2006 B2
7131346 Buttar et al. Nov 2006 B1
7133253 Seagle et al. Nov 2006 B1
7134185 Knapp et al. Nov 2006 B1
7154715 Yamanaka et al. Dec 2006 B2
7155810 Pinarbasi Jan 2007 B2
7170725 Zhou et al. Jan 2007 B1
7177117 Jiang et al. Feb 2007 B1
7193815 Stoev et al. Mar 2007 B1
7196880 Anderson et al. Mar 2007 B1
7199974 Alfoqaha Apr 2007 B1
7199975 Pan Apr 2007 B1
7211339 Seagle et al. May 2007 B1
7212384 Stoev et al. May 2007 B1
7229706 Hasegawa et al. Jun 2007 B2
7238292 He et al. Jul 2007 B1
7239478 Sin et al. Jul 2007 B1
7248431 Liu et al. Jul 2007 B1
7248433 Stoev et al. Jul 2007 B1
7248449 Seagle Jul 2007 B1
7268985 Freitag et al. Sep 2007 B2
7275304 Sakai et al. Oct 2007 B2
7280325 Pan Oct 2007 B1
7283327 Liu et al. Oct 2007 B1
7284316 Huai et al. Oct 2007 B1
7286329 Chen et al. Oct 2007 B1
7289303 Sin et al. Oct 2007 B1
7292409 Stoev et al. Nov 2007 B1
7296339 Yang et al. Nov 2007 B1
7301734 Guo et al. Nov 2007 B2
7307814 Seagle et al. Dec 2007 B1
7307818 Park et al. Dec 2007 B1
7310204 Stoev et al. Dec 2007 B1
7318947 Park et al. Jan 2008 B1
7333295 Medina et al. Feb 2008 B1
7337530 Stoev et al. Mar 2008 B1
7342752 Zhang et al. Mar 2008 B1
7349170 Rudman et al. Mar 2008 B1
7349179 He et al. Mar 2008 B1
7354664 Jiang et al. Apr 2008 B1
7363697 Dunn et al. Apr 2008 B1
7371152 Newman May 2008 B1
7372665 Stoev et al. May 2008 B1
7375926 Stoev et al. May 2008 B1
7379269 Krounbi et al. May 2008 B1
7386933 Krounbi et al. Jun 2008 B1
7389577 Shang et al. Jun 2008 B1
7417832 Erickson et al. Aug 2008 B1
7419891 Chen et al. Sep 2008 B1
7428124 Song et al. Sep 2008 B1
7430098 Song et al. Sep 2008 B1
7436620 Kang et al. Oct 2008 B1
7436638 Pan Oct 2008 B1
7440220 Kang et al. Oct 2008 B1
7443632 Stoev et al. Oct 2008 B1
7444740 Chung et al. Nov 2008 B1
7446987 Zhang et al. Nov 2008 B2
7468870 Arasawa et al. Dec 2008 B2
7493688 Wang et al. Feb 2009 B1
7508627 Zhang et al. Mar 2009 B1
7515388 Zhang et al. Apr 2009 B2
7522377 Jiang et al. Apr 2009 B1
7522379 Krounbi et al. Apr 2009 B1
7522382 Pan Apr 2009 B1
7542246 Song et al. Jun 2009 B1
7551406 Thomas et al. Jun 2009 B1
7552523 He et al. Jun 2009 B1
7554767 Hu et al. Jun 2009 B1
7580230 Freitag et al. Aug 2009 B2
7583466 Kermiche et al. Sep 2009 B2
7595967 Moon et al. Sep 2009 B1
7599158 Wang et al. Oct 2009 B2
7615996 Machita et al. Nov 2009 B1
7639457 Chen et al. Dec 2009 B1
7660080 Liu et al. Feb 2010 B1
7672080 Tang et al. Mar 2010 B1
7672086 Jiang Mar 2010 B1
7675718 Chang et al. Mar 2010 B2
7684160 Erickson et al. Mar 2010 B1
7688546 Bai et al. Mar 2010 B1
7691434 Zhang et al. Apr 2010 B1
7695761 Shen et al. Apr 2010 B1
7719795 Hu et al. May 2010 B2
7726009 Liu et al. Jun 2010 B1
7729086 Song et al. Jun 2010 B1
7729087 Stoev et al. Jun 2010 B1
7736823 Wang et al. Jun 2010 B1
7785666 Sun et al. Aug 2010 B1
7796356 Fowler et al. Sep 2010 B1
7800858 Bajikar et al. Sep 2010 B1
7804668 Zhou et al. Sep 2010 B2
7819979 Chen et al. Oct 2010 B1
7826179 Shimazawa et al. Nov 2010 B2
7829264 Wang et al. Nov 2010 B1
7839606 Jayasekara Nov 2010 B2
7843668 Machita et al. Nov 2010 B2
7846643 Sun et al. Dec 2010 B1
7848065 Freitag et al. Dec 2010 B2
7855854 Hu et al. Dec 2010 B2
7855859 Hara et al. Dec 2010 B2
7869160 Pan et al. Jan 2011 B1
7872824 Macchioni et al. Jan 2011 B1
7872833 Hu et al. Jan 2011 B2
7881023 Machita et al. Feb 2011 B2
7894166 Yamazaki et al. Feb 2011 B2
7894167 Kanaya et al. Feb 2011 B2
7898776 Nakabayashi et al. Mar 2011 B2
7910267 Zeng et al. Mar 2011 B1
7911735 Sin et al. Mar 2011 B1
7911737 Jiang et al. Mar 2011 B1
7916426 Hu et al. Mar 2011 B2
7918013 Dunn et al. Apr 2011 B1
7961438 Mizuno et al. Jun 2011 B2
7968219 Jiang et al. Jun 2011 B1
7974048 Shimazawa et al. Jul 2011 B2
7982989 Shi et al. Jul 2011 B1
8008912 Shang Aug 2011 B1
8011084 Le et al. Sep 2011 B2
8012804 Wang et al. Sep 2011 B1
8014108 Shimazawa et al. Sep 2011 B2
8015692 Zhang et al. Sep 2011 B1
8015694 Carey et al. Sep 2011 B2
8018677 Chung et al. Sep 2011 B1
8018678 Zhang et al. Sep 2011 B1
8018691 Gill et al. Sep 2011 B2
8023230 Machita et al. Sep 2011 B2
8024748 Moravec et al. Sep 2011 B1
8031445 Zhou et al. Oct 2011 B2
8049997 Miyauchi et al. Nov 2011 B2
8072705 Wang et al. Dec 2011 B1
8074345 Anguelouch et al. Dec 2011 B1
8077418 Hu et al. Dec 2011 B1
8077434 Shen et al. Dec 2011 B1
8077435 Liu et al. Dec 2011 B1
8077557 Hu et al. Dec 2011 B1
8079135 Shen et al. Dec 2011 B1
8081403 Chen et al. Dec 2011 B1
8089734 Miyauchi Jan 2012 B2
8091210 Sasaki et al. Jan 2012 B1
8094420 Ayukawa et al. Jan 2012 B2
8097846 Anguelouch et al. Jan 2012 B1
8104166 Zhang et al. Jan 2012 B1
8116043 Leng et al. Feb 2012 B2
8116171 Lee Feb 2012 B1
8125856 Li et al. Feb 2012 B1
8130475 Kawamori et al. Mar 2012 B2
8134794 Wang Mar 2012 B1
8136224 Sun et al. Mar 2012 B1
8136225 Zhang et al. Mar 2012 B1
8136805 Lee Mar 2012 B1
8141235 Zhang Mar 2012 B1
8144437 Miyauchi et al. Mar 2012 B2
8146236 Luo et al. Apr 2012 B1
8147994 Matsuzawa et al. Apr 2012 B2
8149536 Yang et al. Apr 2012 B1
8151441 Rudy et al. Apr 2012 B1
8163185 Sun et al. Apr 2012 B1
8164760 Willis Apr 2012 B2
8164855 Gibbons et al. Apr 2012 B1
8164864 Kaiser et al. Apr 2012 B2
8165709 Rudy Apr 2012 B1
8166631 Tran et al. May 2012 B1
8166632 Zhang et al. May 2012 B1
8169473 Yu et al. May 2012 B1
8171618 Wang et al. May 2012 B1
8179636 Bai et al. May 2012 B1
8179642 Kawamori et al. May 2012 B2
8191237 Luo et al. Jun 2012 B1
8194363 Hara et al. Jun 2012 B2
8194365 Leng et al. Jun 2012 B1
8194366 Li et al. Jun 2012 B1
8196285 Zhang et al. Jun 2012 B1
8200054 Li et al. Jun 2012 B1
8203800 Li et al. Jun 2012 B2
8208350 Hu et al. Jun 2012 B1
8220140 Wang et al. Jul 2012 B1
8222599 Chien Jul 2012 B1
8225488 Zhang et al. Jul 2012 B1
8225489 Miyauchi et al. Jul 2012 B2
8227023 Liu et al. Jul 2012 B1
8228633 Tran et al. Jul 2012 B1
8231796 Li et al. Jul 2012 B1
8233247 Carey et al. Jul 2012 B2
8233248 Li et al. Jul 2012 B1
8248896 Yuan et al. Aug 2012 B1
8254060 Shi et al. Aug 2012 B1
8257597 Guan et al. Sep 2012 B1
8259410 Bai et al. Sep 2012 B1
8259539 Hu et al. Sep 2012 B1
8262918 Li et al. Sep 2012 B1
8262919 Luo et al. Sep 2012 B1
8264797 Emley Sep 2012 B2
8264798 Guan et al. Sep 2012 B1
8270126 Roy et al. Sep 2012 B1
8274764 Hara et al. Sep 2012 B2
8276258 Tran et al. Oct 2012 B1
8277669 Chen et al. Oct 2012 B1
8279719 Hu et al. Oct 2012 B1
8284517 Sun et al. Oct 2012 B1
8288204 Wang et al. Oct 2012 B1
8289821 Huber Oct 2012 B1
8291743 Shi et al. Oct 2012 B1
8307539 Rudy et al. Nov 2012 B1
8307540 Tran et al. Nov 2012 B1
8308921 Hiner et al. Nov 2012 B1
8310785 Zhang et al. Nov 2012 B1
8310901 Batra et al. Nov 2012 B1
8315019 Mao et al. Nov 2012 B1
8316527 Hong et al. Nov 2012 B2
8320076 Shen et al. Nov 2012 B1
8320077 Tang et al. Nov 2012 B1
8320219 Wolf et al. Nov 2012 B1
8320220 Yuan et al. Nov 2012 B1
8320722 Yuan et al. Nov 2012 B1
8322022 Yi et al. Dec 2012 B1
8322023 Zeng et al. Dec 2012 B1
8325569 Shi et al. Dec 2012 B1
8333008 Sin et al. Dec 2012 B1
8334093 Zhang et al. Dec 2012 B2
8336194 Yuan et al. Dec 2012 B2
8339738 Tran et al. Dec 2012 B1
8341826 Jiang et al. Jan 2013 B1
8343319 Li et al. Jan 2013 B1
8343364 Gao et al. Jan 2013 B1
8349195 Si et al. Jan 2013 B1
8351307 Wolf et al. Jan 2013 B1
8357244 Zhao et al. Jan 2013 B1
8369048 Miyauchi et al. Feb 2013 B2
8373945 Luo et al. Feb 2013 B1
8375564 Luo et al. Feb 2013 B1
8375565 Hu et al. Feb 2013 B2
8381391 Park et al. Feb 2013 B2
8385157 Champion et al. Feb 2013 B1
8385158 Hu et al. Feb 2013 B1
8394280 Wan et al. Mar 2013 B1
8400731 Li et al. Mar 2013 B1
8404128 Zhang et al. Mar 2013 B1
8404129 Luo et al. Mar 2013 B1
8405930 Li et al. Mar 2013 B1
8409453 Jiang et al. Apr 2013 B1
8413317 Wan et al. Apr 2013 B1
8416540 Li et al. Apr 2013 B1
8419953 Su et al. Apr 2013 B1
8419954 Chen et al. Apr 2013 B1
8422176 Leng et al. Apr 2013 B1
8422342 Lee Apr 2013 B1
8422841 Shi et al. Apr 2013 B1
8424192 Yang et al. Apr 2013 B1
8441756 Sun et al. May 2013 B1
8443510 Shi et al. May 2013 B1
8444866 Guan et al. May 2013 B1
8449948 Medina et al. May 2013 B2
8451556 Wang et al. May 2013 B1
8451563 Zhang et al. May 2013 B1
8454846 Zhou et al. Jun 2013 B1
8455119 Jiang et al. Jun 2013 B1
8456961 Wang et al. Jun 2013 B1
8456963 Hu et al. Jun 2013 B1
8456964 Yuan et al. Jun 2013 B1
8456966 Shi et al. Jun 2013 B1
8456967 Mallary Jun 2013 B1
8458892 Si et al. Jun 2013 B2
8462592 Wolf et al. Jun 2013 B1
8468682 Zhang et al. Jun 2013 B1
8472288 Wolf et al. Jun 2013 B1
8477461 Chou et al. Jul 2013 B2
8480911 Osugi et al. Jul 2013 B1
8486285 Zhou et al. Jul 2013 B2
8486286 Gao et al. Jul 2013 B1
8488272 Tran et al. Jul 2013 B1
8491801 Tanner et al. Jul 2013 B1
8491802 Gao et al. Jul 2013 B1
8493693 Zheng et al. Jul 2013 B1
8493695 Kaiser et al. Jul 2013 B1
8495813 Hu et al. Jul 2013 B1
8498084 Leng et al. Jul 2013 B1
8506828 Osugi et al. Aug 2013 B1
8514517 Batra et al. Aug 2013 B1
8518279 Wang et al. Aug 2013 B1
8518832 Yang et al. Aug 2013 B1
8520336 Liu et al. Aug 2013 B1
8520337 Liu et al. Aug 2013 B1
8524068 Medina et al. Sep 2013 B2
8526275 Yuan et al. Sep 2013 B1
8531801 Xiao et al. Sep 2013 B1
8532450 Wang et al. Sep 2013 B1
8533937 Wang et al. Sep 2013 B1
8537494 Pan et al. Sep 2013 B1
8537495 Luo et al. Sep 2013 B1
8537502 Park et al. Sep 2013 B1
8545999 Leng et al. Oct 2013 B1
8547659 Bai et al. Oct 2013 B1
8547667 Roy et al. Oct 2013 B1
8547730 Shen et al. Oct 2013 B1
8553369 Song et al. Oct 2013 B2
8555486 Medina et al. Oct 2013 B1
8559141 Pakala et al. Oct 2013 B1
8563146 Zhang et al. Oct 2013 B1
8565049 Tanner et al. Oct 2013 B1
8576517 Tran et al. Nov 2013 B1
8576518 Zeltser Nov 2013 B1
8578594 Jiang et al. Nov 2013 B2
8582238 Liu et al. Nov 2013 B1
8582241 Yu et al. Nov 2013 B1
8582247 Song et al. Nov 2013 B2
8582253 Zheng et al. Nov 2013 B1
8588039 Shi et al. Nov 2013 B1
8593914 Wang et al. Nov 2013 B2
8597528 Roy et al. Dec 2013 B1
8599520 Liu et al. Dec 2013 B1
8599657 Lee Dec 2013 B1
8603593 Roy et al. Dec 2013 B1
8607438 Gao et al. Dec 2013 B1
8607439 Wang et al. Dec 2013 B1
8609262 Horng et al. Dec 2013 B2
8611035 Bajikar et al. Dec 2013 B1
8611054 Shang et al. Dec 2013 B1
8611055 Pakala et al. Dec 2013 B1
8614864 Hong et al. Dec 2013 B1
8619512 Yuan et al. Dec 2013 B1
8625233 Ji et al. Jan 2014 B1
8625941 Shi et al. Jan 2014 B1
8628672 Si et al. Jan 2014 B1
8630068 Mauri et al. Jan 2014 B1
8634280 Wang et al. Jan 2014 B1
8638529 Leng et al. Jan 2014 B1
8643980 Fowler et al. Feb 2014 B1
8649123 Zhang et al. Feb 2014 B1
8659855 Dimitrov Feb 2014 B2
8665561 Knutson et al. Mar 2014 B1
8670211 Sun et al. Mar 2014 B1
8670213 Zeng et al. Mar 2014 B1
8670214 Knutson et al. Mar 2014 B1
8670217 Braganca et al. Mar 2014 B1
8670294 Shi et al. Mar 2014 B1
8670295 Hu et al. Mar 2014 B1
8675318 Ho et al. Mar 2014 B1
8675455 Krichevsky et al. Mar 2014 B1
8681594 Shi et al. Mar 2014 B1
8689430 Chen et al. Apr 2014 B1
8693141 Elliott et al. Apr 2014 B1
8703397 Zeng et al. Apr 2014 B1
8705205 Li et al. Apr 2014 B1
8705212 Gadbois et al. Apr 2014 B2
8711518 Zeng et al. Apr 2014 B1
8711528 Xiao et al. Apr 2014 B1
8717709 Shi et al. May 2014 B1
8720044 Tran et al. May 2014 B1
8721902 Wang et al. May 2014 B1
8724259 Liu et al. May 2014 B1
8749790 Tanner et al. Jun 2014 B1
8749920 Knutson et al. Jun 2014 B1
8749926 Le et al. Jun 2014 B1
8753903 Tanner et al. Jun 2014 B1
8760807 Zhang et al. Jun 2014 B1
8760818 Diao et al. Jun 2014 B1
8760819 Liu et al. Jun 2014 B1
8760822 Li et al. Jun 2014 B1
8760823 Chen et al. Jun 2014 B1
8763235 Wang et al. Jul 2014 B1
8780498 Jiang et al. Jul 2014 B1
8780505 Xiao et al. Jul 2014 B1
8780508 Dimitrov Jul 2014 B2
8786983 Liu et al. Jul 2014 B1
8790524 Luo et al. Jul 2014 B1
8790527 Luo et al. Jul 2014 B1
8792208 Liu et al. Jul 2014 B1
8792312 Wang et al. Jul 2014 B1
8793866 Zhang et al. Aug 2014 B1
8797680 Luo et al. Aug 2014 B1
8797684 Tran et al. Aug 2014 B1
8797686 Bai et al. Aug 2014 B1
8797692 Guo et al. Aug 2014 B1
8813324 Emley et al. Aug 2014 B2
8842396 Zhu Sep 2014 B1
8891208 Degawa et al. Nov 2014 B2
8913349 Yamane et al. Dec 2014 B2
9007725 Diao Apr 2015 B1
9053720 Chye Jun 2015 B1
9076468 Keener Jul 2015 B1
9099122 Jiang Aug 2015 B2
9147404 Luo Sep 2015 B1
9153258 Le Oct 2015 B2
9208804 Isowaki Dec 2015 B1
9214171 Isowaki Dec 2015 B2
9384763 Liu Jul 2016 B1
9449621 Mauri Sep 2016 B1
9472216 Mauri Oct 2016 B1
20020024777 Funayama et al. Feb 2002 A1
20020039264 Ohsawa et al. Apr 2002 A1
20050275975 Zhang et al. Dec 2005 A1
20060109592 Watanabe et al. May 2006 A1
20070217077 Kanaya et al. Sep 2007 A1
20070285849 Jayasekara Dec 2007 A1
20090073616 Shimazawa et al. Mar 2009 A1
20090135529 Shimazawa et al. May 2009 A1
20090168264 Hara et al. Jul 2009 A1
20090180217 Chou et al. Jul 2009 A1
20090190272 Machita et al. Jul 2009 A1
20090201612 Shimazawa et al. Aug 2009 A1
20090207534 Miyauchi et al. Aug 2009 A1
20090213502 Miyauchi et al. Aug 2009 A1
20090273864 Machita et al. Nov 2009 A1
20090290264 Ayukawa et al. Nov 2009 A1
20090303779 Chen et al. Dec 2009 A1
20100027168 Chou et al. Feb 2010 A1
20100053820 Miyauchi et al. Mar 2010 A1
20100079917 Miyauchi et al. Apr 2010 A1
20100103562 Machita et al. Apr 2010 A1
20100103563 Machita et al. Apr 2010 A1
20100149689 Tsuchiya et al. Jun 2010 A1
20100214696 Matsuzawa et al. Aug 2010 A1
20100214700 Hara et al. Aug 2010 A1
20100232066 Hara et al. Sep 2010 A1
20100232073 Chou et al. Sep 2010 A1
20100290157 Zhang et al. Nov 2010 A1
20110026169 Gill et al. Feb 2011 A1
20110051291 Miyauchi et al. Mar 2011 A1
20110069417 Kawamori et al. Mar 2011 A1
20110086240 Xiang et al. Apr 2011 A1
20110091744 Kawamori et al. Apr 2011 A1
20110215800 Zhou et al. Sep 2011 A1
20110232079 Miyauchi et al. Sep 2011 A1
20110235216 Lin Sep 2011 A1
20110273802 Zhou et al. Nov 2011 A1
20110317313 Miyauchi et al. Dec 2011 A1
20120129007 Zheng et al. May 2012 A1
20120111826 Chen et al. Aug 2012 A1
20120216378 Emley et al. Aug 2012 A1
20120237878 Zeng et al. Sep 2012 A1
20120275062 Gao Nov 2012 A1
20120281319 Singleton et al. Nov 2012 A1
20120281320 Singleton et al. Nov 2012 A1
20120298621 Gao Nov 2012 A1
20130069642 Sapozhnikov et al. Mar 2013 A1
20130149559 Covington et al. Jun 2013 A1
20130216702 Kaiser et al. Aug 2013 A1
20130216863 Li et al. Aug 2013 A1
20130257421 Shang et al. Oct 2013 A1
20140002930 Dimitrov Jan 2014 A1
20140004385 Colak Jan 2014 A1
20140004386 Covington Jan 2014 A1
20140035075 Zhu et al. Feb 2014 A1
20140049857 Isowaki Feb 2014 A1
20140153138 Le Jun 2014 A1
20140154529 Yang et al. Jun 2014 A1
20140175050 Zhang et al. Jun 2014 A1
20140268405 Machita et al. Sep 2014 A1
20150002961 Keener Jan 2015 A1
20150147481 Braganca May 2015 A1
20150154990 Jiang et al. Jun 2015 A1
20150154991 Le Jun 2015 A1
20150221325 Ho Aug 2015 A1
20150332712 Isowaki Nov 2015 A1
Non-Patent Literature Citations (13)
Entry
Notice of Allowance dated Mar. 15, 2016, from U.S. Appl. No. 14/670,340, 5 pp.
Ex parte Quayle Action dated Dec. 30, 2015, from U.S. Appl. No. 14/670,340, 9 pp.
Zhitao Diao, et al., U.S. Appl. No. 14/508,697, filed Oct. 7, 2014, 29 pages.
Anup G. Roy, et al., U.S. Appl. No. 14/310,122, filed Jun. 20, 2014, 34 pages.
Office Action dated Sep. 30, 2014 from U.S. Appl. No. 14/310,122, 18 pages.
“Scissors-type trilayer giant magnetoresistive sensor using heusler alloy ferromagnet,” http://phys.org/news/ 2011-11-scissors-type-trilayer-giant-magnetoresistive-sensor.html, downloaded on Jul. 29, 2014, pp. 1-9.
Han, et al., “Perspectives of Read Head Technology for 10 Tb/in2 Recording”, IEEE Transactions on Magnetics, vol. 46, No. 3, Mar. 2010, pp. 709-714.
Jiang-Gang (Jimmy) Zhu, “New heights for hard disk drives,” MaterialsToday, Jul./Aug. 2003, pp. 22-30.
Wang, et al., “Downtrack response of differential reader for high density magnetic recording,” Data Storage Institute, Agency for Science, Technology and Research (A*STAR), pp. 1-13.
Robert Lamberton, et al., “Current-in-Plane GMR Trilayer Head Design for Hard-Disk Drives: Characterization and Extendibility,” IEEE Transactions on Magnetics, vol. 43, No. 2, Feb. 2007, pp. 645-650.
Feng Liu, et al., U.S. Appl. No. 14/670,340, filed Mar. 26, 2015, 31 pages.
Anup G. Roy, et al., U.S. Appl. No. 14/621,712, filed Feb. 13, 2015, 30 pages.
“Scissors-type Trilayer Giant Magnetoresistive Sensor using Heusler Alloy Ferromagnet for Narrow Reader of Ultra-high Density Hard Disk Drives,” http://www.nims.go.jp/eng/news/press/2011/10/p201110310.html, downloaded on Jul. 29, 2014, pp. 1-3.
Divisions (1)
Number Date Country
Parent 14674899 Mar 2015 US
Child 15236386 US
Continuation in Parts (1)
Number Date Country
Parent 14670340 Mar 2015 US
Child 14674899 US