The present application is a national phase entry under 35 U.S.C. ยง371 of International Application No. 2007/CN2007/001161 filed Apr. 11, 2007, published in Chinese, which claims the benefit of Chinese Patent Application No. 200710027116.4, filed Mar. 12, 2007. The disclosures of said applications are incorporated by reference herein.
The invention relates to a processing device for multiplexing between the second generation and third generation communication systems, and more particularly relates to dual frequency multiplexer.
With rapid development of mobile communications, a scheme in which multiple systems share a common station as well as a common antenna feeder resource has gotten its population by more and more operators. By this way, advantage of sharing resource and reducing system device cost can be obtained. Within a system in which 2G/3G sharing a common antenna feeder, dual frequency multiplexer is a necessary microwave component that mainly serves to multiplex/de-multiplex signals of different systems so as to save the length of feed cable, simplify system construction and reduce cost. In addition, power is supplied to the devices at base station tower via a radio frequency cable and accordingly, the multiplexer connected with the feed cable must have the ability of passing direct current there through.
With reference to the schematic diagram of
The RF signal frequency range of the system in which 2G/30 sharing a common antenna feeder is 806 MHz-960 MHz and 1710 MHz-2170 MHz respectively. By now, to obtain such wide a work frequency band and capability of passing direct current, most multiplex products employ dielectric substrates and realize it by micro-strip circuits. The disadvantages of product of this type include large bulkage and low power capacity. Moreover, inactive inter-modulation is greatly depended on property of dielectric substrate material and therefore, it is difficult to control the dielectric substrate material during batch production.
One object of the invention is to provide a dual frequency multiplexer which can be minimized in size, reduce differential loss, obtain large power capacity, and have high isolation degree between direct current circuit and RF signal circuit.
To this end, the invention utilizes the following technical scheme.
The dual frequency multiplexer of the invention includes a multiplexer port, a first port used to receive corresponding a first frequency band, a second port used to receive corresponding a second frequency band, two coaxial harmonic oscillator type band pass filters and two direct current circuits.
The first direct current circuit is connected between the first port and the multiplexer port, while the second direct current circuit is connected between the second port and the multiplexer port.
The first coaxial harmonic oscillator type band pass filter is connected electrically with the first port through a first blocking capacitor, while the second coaxial harmonic oscillator type band pass filter is connected electrically with the second port through a second blocking capacitor. The other ends of both first and second coaxial harmonic oscillator type band pass filters are electrically coupled to the multiplexer port by a third blocking capacitor.
The first direct current circuit includes a first low pass filter coupled electrically with the first blocking capacitor, whilst the second direct current circuit includes a second low pass filter coupled electrically with the second blocking capacitor. The first and second direct current circuits share a common third low pass filter which is connected in electrical manner with the third blocking capacitor.
The first and second coaxial harmonic oscillator type band pass filters are disposed in a box including a base body, a cover plate and a cover body. The two coaxial harmonic oscillator type band pass filters are located on the base body and spaced each other by a metal plate. The multiplexer port, first and second ports arc positioned on lateral side of the base body. The blocking capacitors are contained in the coaxial chamber of the two coaxial harmonic oscillator type band pass filters. The cover plate is secured on the base body. The first and second direct current circuits are placed on the cover plate. The low pass filters of the first and second direct current circuits are fixed on an edge of a top surface of the coaxial chamber by means of a support member. The cover body and the base body are fastened with each other.
Preferably, a gap with a width not less than 0.2 mm is defined between the top surface of the support member and a bottom surface of the cover plate in order to maintain good electrical. performance of the RF signal.
Preferably, the blocking capacitors each are of distributed parameter capacitor.
More particularly, each blocking capacitor includes an inner conductor, an insulator and a sleeve. The insulator surrounds the inner conductor at outer perimeter thereof, while the sleeve surrounds the outer perimeter of the insulator. The sleeve serves to electrically connect the first and/or second coaxial harmonic oscillator type band pass filter. The inner conductor is used to connect electrically with the first and/or second direct current circuits so as to be connected with an adjacent port.
The first and second coaxial harmonic oscillator type band pass filters each a coaxial chamber and a plurality of harmonic posts arranged in the chamber sequentially. For the two coaxial harmonic oscillator type band pass filters, a ridge is disposed between two adjacent harmonic posts for purpose of enhancing coupling effect. Preferably, the first coaxial harmonic oscillator type band pass filter has 5 harmonic posts, while the second coaxial harmonic oscillator type band pass filter has 6 harmonic posts.
Furthermore, corresponding to the two coaxial harmonic oscillator type band pass filters, the cover plate has several turning screws which pass through the cover plate and extend into the two coaxial chambers with the aim of adjustment of tuning frequency and coupling degree of the coaxial harmonic oscillators.
The cover plate further has a through hole defined therein with which a Gore permeable film is covered.
Compared with prior art, the invention can obtain the following advantages. The 2G/3G dual frequency multiplexer of the invention is implemented by a plurality of coaxial harmonic oscillator type band pass filters. By this way, the direct current circuit and the RF circuit are isolated from each other. Utilization of distributed blocking capacitors makes the product of the invention small. Moreover, improvement of the structure of the invention brings effect such as less differential loss, large power capacity, as well as high isolation degree between circuits.
With reference to
As shown in
A first port Port2 and a second port Port3 are provided at left side of the base body 6, both of which are adapted to receive radio frequency (RF) signals with frequency of 806-960 MHz and 1710-2170 MHz respectively. A multiplexer port Port1 is located at the right side of the base body 6. The multiplexer port Port1 is able to output RF signal multiplexed by the first and second ports (Port2 and Port3). Alternatively, an input signal can be de-multiplexed through the first and second ports (Port2 and Port3).
Two RF circuits, that is, a first RF circuit and a second RF circuit are integrated in the base body 6. The first RF circuit is consisted of the first port Port2, a blocking capacitors (not shown, see a third blocking capacitor 68), two coaxial harmonic oscillator type band pass filters (610 and 611), a third blocking capacitor 68 and a multiplexer port, all of these components being connected with each other electrically. The second RF circuit is consisted of the second port Port3, a second blocking capacitors (not shown, see a third blocking capacitor 68), two coaxial harmonic oscillator type band pass filters (620 and 621), a third blocking capacitor 68 and a multiplexer port, all of these components being connected with each other electrically.
It is clear that each RF circuit includes not only coaxial harmonic oscillator type band pass filters (610 and 611; 620 and 621), but also the third blocking capacitor 68 in common.
Each of coaxial harmonic oscillator type band pass filters (610 and 611; 620 and 621) includes corresponding coaxial chambers 610 and 620 and plural harmonic posts 611 and 621. As illustrated in
The coaxial chambers 610 and 620 are not completely isolated by the metal plate 63 located between the two coaxial harmonic oscillator type band pass filters (610 and 611; 620 and 621).
The first and second blocking capacitors have the same construction as that of the third capacitor 68. The third capacitor 68 includes an inner conductor 683, an insulator 682 and a sleeve 681. The insulator 682 surrounds the inner conductor 683, while the sleeve 681 surrounds the insulator 682. The insulator 682 is implemented by medium film. The sleeve 681 is electrically coupled with the final posts of respective first and second coaxial harmonic oscillator type band pass filters (610 and 611; 620 and 621). The inner conductor 683 is coupled with the multiplexer port Port1 directly. As such, the sleeve 681 and inner conductor 683 can be isolated from each other by the insulator 682 so as to construct distributed parameter capacitor. For two RF circuits, transmission of RF signal is carried out by coupling between the inner conductor 683 and sleeve 681 with direct current being blocked to pass the sleeve 681, thereby making it possible for the RF circuit to block direct current.
As described above, the first and second blocking capacitors employ the same construction as the third blocking capacitor 68. However, the sleeve of the first blocking capacitor (not shown) is connected only to a harmonic post adjacent the second blocking capacitor, of the first coaxial harmonic oscillator type band pass filter, whilst the sleeve of the second blocking capacitor (not shown) is connected only to a harmonic post adjacent the second blocking capacitor, of the second coaxial harmonic oscillator type band pass filter.
The inner conductors of corresponding blocking capacitors are extended out of and electrically connected with the ports Port1, Port2 and Port3 respectively.
The cover plate 2 has a printed circuit board supported thereon. A circuit shown in
Referring to
The printed circuit diagram of
One ends of respective low pass filters 201, 202 and 203 are connected to blocking capacitors of adjacent ports Port1, Port2, Port3. More specifically, one end of the third low pass fitter 201 is electrically connected with the inner conductor 683 of the third blocking capacitor 68; one end of the first low pass filter 202 is electrically connected with the inner conductor of the first blocking capacitor (not shown); while one end of the second low pass filter 203 is electrically connected with the inner conductor of the second blocking capacitor (not shown). The other ends of the low pass filters 201, 202 and 203 have corresponding contact pads 26 which contact with the connection nodes 281, 282 and 283 of the printed circuit board shown in
The switches are implemented by some magnetic beads 208 welded onto the circuit board to suppress high frequency signal. Disconnection can be established by removing the magnetic beads 28, and resumption of connection can be obtained by placing the same thereon.
As illustrated in
As illustrated in
With reference to
With reference to
With reference to
In addition, the inner surfaces of the two coaxial chambers 610 and 620 are coated with silver, thereby greatly reducing attenuation of RF signal transmission and keeping insertion loss of the signal within the pass band less than 0.2 dB.
In summary, the invention overcomes drawbacks of prior art and brings advantages as follows.
The size of the dual frequency multiplexer of the invention can be reduced even to 174 mm*105 mm*61 mm. The sleeve typed coupling construction sufficiently utilizes a room through which the inner conductor of the multiplexer port Port1 passes. Therefore, coupling of RF signal is obtained, and no additional space is necessary. Addition of the lump parameter low pass filters between the direct current circuit and RF circuit ensures isolation between the direct current circuit and RF signal circuit, and reduces largely the size of the printed circuit board on the cover plate.
High isolation is realized. Because each RF circuit is of completely sealed waveguide chamber construction, isolation between the circuits is improved largely. The isolation provided by the first port Port1 to RF signal at frequency of 1710-2170 MHz is larger than 85 dB, and the isolation provided by the second port Port3 to RF signal at frequency of 806-960 MHz is larger than 65 dB.
Higher capacity is realized. As a sufficiently wide of gap is defined between each harmonic post within the coaxial chamber and walls of the coaxial chamber, RF signal power support ability of the components is enhanced. Mean power supported by each port is up to 250 watts.
Number | Date | Country | Kind |
---|---|---|---|
2007 1 0027116 | Mar 2007 | CN | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
---|---|---|---|---|
PCT/CN2007/001161 | 4/11/2007 | WO | 00 | 1/8/2010 |
Publishing Document | Publishing Date | Country | Kind |
---|---|---|---|
WO2008/110040 | 9/18/2008 | WO | A |
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