Claims
- 1. A dual-mode resonator, comprising:
a dielectric substrate having a region divided into four quadrants; a ring resonator line comprising four folded sections that are arranged to form quadrangularly symmetrical configurations within the four quadrants of the region.
- 2. The resonator of claim 1, wherein each of the symmetrical configurations is a unidirectional bending configuration.
- 3. The resonator of claim 2, wherein the unidirectional bending configuration is rectilinear.
- 4. The resonator of claim 2, wherein the unidirectional bending configuration is curvilinear.
- 5. The resonator of claim 1, wherein each of the symmetrical configurations is a spiraling configuration.
- 6. The resonator of claim 5, wherein the spiraling configuration is rectilinear.
- 7. The resonator of claim 5, wherein the spiraling configuration is curvilinear.
- 8. The resonator of claim 1, wherein each of the symmetrical configurations is a meandering configuration.
- 9. The resonator of claim 8, wherein the meandering configuration is rectilinear.
- 10. The resonator of claim 8, wherein the meandering configuration is curvilinear.
- 11. The resonator of claim 1, wherein the resonator line and dielectric structure form a planar structure.
- 12. The resonator of claim 1, wherein the resonator line and dielectric structure form a microstrip resonator.
- 13. The resonator of claim 1, wherein the resonator line is composed of High Temperature Superconductor material.
- 14. The resonator of claim 1, wherein the resonator line has a nominal linear length of one full wavelength at the resonant frequency.
- 15. The resonator of claim 1, further comprising input and output couplings coupled to the resonator line.
- 16. The resonator of claim 15, wherein the input and output couplings are coupled to the resonator line in a quadrangularly asymmetrical manner.
- 17. The resonator of claim 15, wherein one or both of the input and output couplings comprises a transmission line directly connected to the resonator line, and a capacitor coupled to the transmission line.
- 18. A dual-mode filter structure, comprising:
one or more dielectric substrates having a plurality of regions, each region being divided into four quadrants; and a plurality of ring resonator lines respectively associated with the plurality of regions, each resonator line comprising four folded sections that are arranged to form quadrangularly symmetrical configurations within the four quadrants of the respective region.
- 19. The filter structure of claim 18, wherein each of the symmetrical configurations is a unidirectional bending configuration.
- 20. The filter structure of claim 19, wherein the unidirectional bending configuration is rectilinear.
- 21. The filter structure of claim 19, wherein the unidirectional bending configuration is curvilinear.
- 22. The filter structure of claim 18, wherein each of the symmetrical configurations is a spiraling configuration.
- 23. The filter structure of claim 22, wherein the spiraling configuration is rectilinear.
- 24. The filter structure of claim 22, wherein the spiraling configuration is curvilinear.
- 25. The filter structure of claim 18, wherein each of the symmetrical configurations is a meandering configuration.
- 26. The filter structure of claim 25, wherein the meandering configuration is rectilinear.
- 27. The filter structure of claim 25, wherein the meandering configuration is curvilinear.
- 28. The filter structure of claim 18, wherein the plurality of resonator lines and one or more dielectric substrates form a planar structure.
- 29. The filter structure of claim 18, wherein the plurality of resonator lines and one or more dielectric substrates form a microstrip resonator.
- 30. The filter structure of claim 18, wherein each of the plurality of resonator lines is composed of High Temperature Superconductor material.
- 31. The filter structure of claim 18, wherein each of the plurality of resonator lines has a nominal linear length of one full wavelength at the resonant frequency.
- 32. The filter structure of claim 18, wherein the plurality of resonators comprises a pair of resonators.
- 33. The filter structure of claim 18, wherein the one or more substrates comprises a single substrate.
- 34. The filter structure of claim 18, wherein the one or more substrates comprises a plurality of substrates.
- 35. The filter structure of claim 18, further comprising:
an input coupling to a first one of said plurality of resonator lines; and an output coupling to a last one of said plurality of resonator lines.
- 36. The filter structure of claim 35, further comprising one or more couplings interconnecting the plurality of resonator lines.
- 37. The filter structure of claim 35, wherein one or both of the input and output couplings comprises a transmission line directly connected to the resonator line, and a capacitor coupled to the transmission line.
- 38. A dual-mode resonator, comprising:
a dielectric substrate having a region divided into four quadrants; a ring resonator line forming quadrangularly symmetrical meandered configurations within the four quadrants of the region, each of the meandered configurations being symmetrical about an imaginary line and comprising a plurality of meanders and a plurality of interconnecting segments, wherein each interconnecting segment on one side of the imaginary line is parallel to and opposes an interconnecting segment on another side of the imaginary line.
- 39. The resonator of claim 38, wherein the plurality of meanders comprises four or more meanders.
- 40. The resonator of claim 38, wherein the plurality of meanders comprises six or more meanders.
- 41. The resonator of claim 38, wherein the lengths of the meanders gradually increase along the length of the respective meandering configuration.
- 42. The resonator of claim 38, wherein the resonator line and dielectric structure form a planar structure.
- 43. The resonator of claim 38, wherein the resonator line and dielectric structure form a microstrip resonator.
- 44. The resonator of claim 38, wherein the resonator line is composed of High Temperature Superconductor material.
- 45. The resonator of claim 38, wherein the resonator line has a nominal linear length of one full wavelength at the resonant frequency.
- 46. The resonator of claim 38, further comprising input and output couplings coupled to the resonator line.
- 47. The resonator of claim 46, wherein the input and output couplings are coupled to the resonator line in a quadrangularly asymmetrical manner.
- 48. The resonator of claim 46, wherein one or both of the input and output couplings comprises a transmission line directly connected to the resonator line, and a capacitor coupled to the transmission line.
- 49. A dual-mode filter structure, comprising:
one or more dielectric substrates having a plurality of regions, each region being divided into four quadrants; and a plurality of ring resonator lines respectively associated with the plurality of regions, each of the resonator lines forming quadrangularly symmetrical meandered configurations within the four quadrants of the respective region, each of the meandered configurations being symmetrical about an imaginary line and comprising a plurality of meanders and a plurality of interconnecting segments, wherein each interconnecting segment on one side of the imaginary line is parallel to and opposes an interconnecting segment on another side of the imaginary line.
- 50. The filter structure of claim 49, wherein the plurality of meanders comprises four or more meanders.
- 51. The filter structure of claim 49, wherein the plurality of meanders comprises six or more meanders.
- 52. The filter structure of claim 49, wherein the lengths of the meanders gradually increase along the length of the respective meandering configuration.
- 53. The filter structure of claim 49, wherein the plurality of resonator lines and one or more dielectric substrates form a planar structure.
- 54. The filter structure of claim 49, wherein the plurality of resonator lines and one or more dielectric substrates form a microstrip resonator.
- 55. The filter structure of claim 49, wherein each of the plurality of resonator lines is composed of High Temperature Superconductor material.
- 56. The filter structure of claim 49, wherein each of the plurality of resonator lines has a nominal linear length of one full wavelength at the resonant frequency.
- 57. The filter structure of claim 49, wherein the plurality of resonators comprises a pair of resonators.
- 58. The filter structure of claim 49, wherein the one or more substrates comprises a single substrate.
- 59. The filter structure of claim 49, wherein the one or more substrates comprises a plurality of substrates.
- 60. The filter structure of claim 49, further comprising:
an input coupling to a first one of said plurality of resonator lines; and an output coupling to a last one of said plurality of resonator lines.
- 61. The filter structure of claim 50, further comprising one or more couplings interconnecting the plurality of resonator lines.
- 62. The filter structure of claim 50, wherein one or both of the input and output couplings comprises a transmission line directly connected to the resonator line, and a capacitor coupled to the transmission line.
- 63. A dual-mode resonator, comprising:
a dielectric substrate having a region divided into four quadrants; a ring resonator line forming quadrangularly symmetrical configurations within the four quadrants of the dielectric substrate; and input and output couplings coupled to the resonator line, wherein one or both of the input and output couplings comprises a transmission line directly connected to the resonator line and a capacitor coupled to the transmission line.
- 64. The resonator of claim 63, wherein both of the input output couplings comprises a transmission line directly connected to the resonator line and a capacitor coupled to the transmission line.
- 65. The resonator of claim 63, wherein the transmission line is a high impedance line.
- 66. The resonator of claim 63, wherein one or both of the input and output couplings further comprises another transmission line coupled to the capacitor.
- 67. The resonator of claim 66, wherein the transmission line is a high impedance line, and the other transmission line is a low impedance line.
- 68. The resonator of claim 63, wherein the capacitor comprises an interdigitated capacitor.
- 69. The resonator of claim 63, wherein the input and output couplings are coupled to the resonator line in a quadrangularly asymmetrical manner.
- 70. The resonator of claim 63, wherein the symmetrical configurations comprises meandered configurations.
- 71. The resonator of claim 63, wherein the resonator lines comprises folded segments that form the symmetrical configurations.
- 72. The resonator of claim 63, wherein the resonator line and dielectric structure form a planar structure.
- 73. The resonator of claim 63, wherein the resonator line and dielectric structure form a microstrip resonator.
- 74. The resonator of claim 63, wherein the resonator line is composed of High Temperature Superconductor material.
- 75. The resonator of claim 63, wherein the resonator line has a nominal linear length of one full wavelength at the resonant frequency.
- 76. The resonator of claim 63, further comprising input and output couplings coupled to the resonator line.
- 77. The resonator of claim 63, wherein the input and output couplings are coupled to the resonator line in a quadrangularly asymmetrical manner.
- 78. The resonator of claim 63, wherein one or both of the input and output couplings comprises a transmission line directly connected to the resonator line, and a capacitor coupled to the transmission line.
- 79. A dual-mode filter structure, comprising:
one or more dielectric substrates having a plurality of regions, each of which is divided into four quadrants; a plurality of ring resonator lines respectively associated with the plurality of regions, each of the resonator lines forming quadrangularly symmetrical configurations within the four quadrants of the respective region; an input coupling to a first one of said plurality of resonator lines; and an output coupling to a last one of said plurality of resonator lines; wherein one or both of the input and output couplings comprises a transmission line directly connected to the respective resonator line and a capacitor coupled to the transmission line.
- 80. The filter structure of claim 79, wherein both of the input output couplings comprises a transmission line directly connected to the resonator line and a capacitor coupled to the transmission line.
- 81. The filter structure of claim 79, wherein the transmission line is a high impedance line.
- 82. The filter structure of claim 79, wherein one or both of the input and output couplings further comprises another transmission line coupled to the capacitor.
- 83. The filter structure of claim 79, wherein the transmission line is a high impedance line, and the other transmission line is a low impedance line.
- 84. The filter structure of claim 79, wherein the capacitor comprises an interdigitated capacitor.
- 85. The filter structure of claim 79, wherein the symmetrical configurations comprises meandered configurations.
- 86. The filter structure of claim 79, wherein the resonator lines comprises folded segments that form the symmetrical configurations.
- 87. The filter structure of claim 79, further comprising one or more couplings interconnecting the plurality of resonator lines.
- 88. The filter structure of claim 87, wherein each of the one or more couplings comprises first and second transmission line segments directly connected to the respective resonator lines, first and second capacitors respectively coupled to the first and second transmission lines, and a common coupling segment coupled between the first and second capacitors.
- 89. The filter structure of claim 88, wherein each of the first and second capacitors comprises an interdigital capacitor.
- 90. The filter structure of claim 79, wherein the plurality of resonator lines and one or more dielectric substrates form a planar structure.
- 91. The filter structure of claim 79, wherein the plurality of resonator lines and one or more dielectric substrates form a microstrip resonator.
- 92. The filter structure of claim 79, wherein each of the plurality of resonator lines is composed of High Temperature Superconductor material.
- 93. The filter structure of claim 79, wherein each of the plurality of resonator lines has a nominal linear length of one full wavelength at the resonant frequency.
- 94. The filter structure of claim 79, wherein the plurality of resonator lines comprises a pair of resonator lines.
- 95. The filter structure of claim 79, wherein the one or more substrates comprises a single substrate.
- 96. The filter structure of claim 79, wherein the one or more substrates comprises a plurality of substrates.
GOVERNMENT LICENSE RIGHTS
[0001] The U.S. Government has a paid-up license in this invention and the right in limited circumstances to require the patent owner to license others on reasonable terms as provided for by the terms of Contract MDA972-00-C-0010 awarded by the Defense Advanced Research Projects Agency (DARPA).