Patent Application
20160239036
The present invention relates generally to power supplies and in particular, to power supply solutions for on-chip voltage domains.
Embodiments of the invention are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings in which like reference numerals refer to similar elements.
The present disclosure provides a power delivery scheme to provide a parallel regulation feature for integrated voltage regulators (IVRs). For a supply domain, this feature may provide seamless transfer of voltage regulation and power delivery from the IVR to an alternate, more efficient, parallel (linear) regulator (LVR) during specific (light) load conditions where overall IVR power efficiency may be low. When Parallel regulation is activated the IVR can be fully powered down and its input supply lowered, if not turned off, reducing or removing altogether sources of static leakage or active power on the IVR input supply rail. The parallel regulator can be a linear voltage regulator (LVR) or potentially another kind of efficient regulator for the specific operating condition of interest, like a switched capacitor regulator or a smaller switching mode voltage regulator.
A first stage VR (from 103), which is on a motherboard, converts from the PSU (power supply unit) or battery voltage (e.g., 12V to 20V) to a lower voltage (e.g., 1.8 V for active modes and 1.3 for reduced power modes). These supplies are distributed through input supply rails across the microprocessor die. The IVR/LVR blocks function as a second conversion stage. For example, there could be between 8 and 31 IVR/LVR domains depending on processor configuration. In some embodiments, the IVRs are implemented with FIVRs (fully integrated voltage regulators). Each IVR is independently programmable to achieve optimal operation given the requirements of the domain it is powering. The settings may be optimized by a power control unit (PCU), which may specify the input voltage, output voltage, number of operating phases, and a variety of other settings to minimize the total power consumption of the die.
It should be appreciated that IVR (integrated voltage regulator) may comprise any suitable switching type regulator with at least its PWM (pulse width modulation) circuitry integrated into the chip for which it is supplying power. A FIVR (fully integrated voltage regulator) is a type of IVR. A FIVR may be implemented with any suitable switching DC regulator technology. It will typically have most, if not all, of its components housed in a semiconductor package (package including one or more dies) for which it is supplying regulated power. For example, in some embodiments, the power FETs, control circuitry and high frequency decoupling components might be on the die, while the inductors and mid-frequency input decoupling capacitors might be in the package.
A block diagram representing the circuitry for a single FIVR domain is shown in
The bridge drivers may be controlled thru high-voltage level-shifters and may support ZVS (zero-voltage switching) and ZCS (zero-current-switching) soft-switching operation. The gates of the cascode devices are coupled to a “half-rail” supply (e.g., Vccdrvn) regulated to Vin/2. This may also be used as a low-side supply for the PMOS bridge driver as well as for the high-side supply of the NMOS bridge driver. The area occupied by the power switches and drivers is small, so they may be efficiently distributed across the die, for example, above a connection to their associated package inductor, which minimizes routing losses. The driver circuitry is interleaved with the power switches in an array which can minimize parasitics to allow for very high switching frequencies. This also can allow the size of the bridge to be scaled based on the current requirements and optimization points for each supply domain.
In the depicted embodiment, Each FIVR domain is controlled by a FIVR Control Module (FCM). The FCM (not expressly shown) contains the circuitry for generating the PWM signals using double-edge modulation, as indicated in
As is shown in
A high-precision 9-bit DAC 206 generates a reference voltage for a programmable, high bandwidth analog fully differential type-3 compensator (formed from amplifier 202 and programmable RC compensation circuit 204). Sense lines feed the FIVR output voltage back to the compensator. The compensator may be programmed individually for each voltage domain based on its output filter, and can be reprogrammed while the domain is active to maintain optimal transient response, e.g., as phase shedding occurs. Pertinent to this disclosure, it may also be used for transitioning back to a FIVR mode from an LVR mode. The compensator output voltage (Feedback Voltage) is measured before the FIVR is deactivated. Then, when the FIVR is to be re-activated (transition from LVR to FIVR), the amplifier 202 is disable (e.g., tri-stated output), and a separate DAC (not shown) is used to generate a priming voltage at the compensator output (output of 202) to precharge the output at the stored level from when the FIVR was de-activated. In this way, the PWM is started at a value that should generate a FIVR output voltage equivalent to what it was before being deactivated.
In some embodiments, when the processor is to be in an active state (e.g., ACPI C0-C3), VCCIN will go to an active level (e.g., 1.8 V). In this higher (active) input supply mode, the FIVR is controlled to be active to regulate the output rail(s) VCCOUT, with the LVR deactivated. Alternately, during processor low power states (e.g., C7 and higher), the processor load reduces, and thus, in order to save power, VCCIN may be lowered, e.g., to 1.3 V. The LVR is activated to regulate the VCCOUT rail, while the FIVR is turned off. In some embodiments, procedures for transitioning between these regulators with very little (if any) voltage change is presented below. (The output voltage will remain substantially the same except that FIVR output ripple noise will disappear when the LVR is driving the output.)
In the depicted embodiment, a linear voltage regulator is used for LVR 305, and a FIVR is used for an IVR. An FCM control logic 335 (which may correspond to the FCM discussed with respect to the FIVR in
The parallel LVR 305 is designed to deliver a smaller amount of current than can the FIVR (but enough for a low power state condition) at a greater efficiency. It should be appreciated that while a simple linear regulator is shown for use as the low voltage regulator, any suitable regulator design could be employed. For example, alternate LVRs could be implemented with a small switching mode voltage regulator or a switched capacitor voltage converter. Ideally, the LVR will provide a suitably controllable output voltage, not be too complicated so as to incur excessive overhead, and importantly, operate with increased efficiency, as compared with the FIVR, at reduced input voltages.)
It should be appreciated that not all of the supply domains may have parallel LVRs as disclosed herein. For example, in some embodiments, parallel LVRs may not be used in some domains where full power is to be available during low power modes. Such domains could include, for example, platform controller rails that may be the only IVR rails active in low power state C7 while other rails (e.g., CPU core, graphics and LLC) are off. In some schemes, the parallel LVRs will be engaged in C7+ low power states where the power consumption of the CPU is low while the IVRs are used to supply those rails the rest of the time.
In operation, transition into the parallel LVR mode may be substantially transparent and seamless. The voltage remains the same, and the load being powered is unaware of the change in power delivery source. During regular FIVR operation (e.g., VCCIN being from 1.6V to 1.8V), the FIVR regulates the output power rail VCCOUT. During low power states (e.g., VCCIN reduced to between 1.2V and 1.3V), the FIVR is turned off and the parallel LVR is used to regulate the corresponding output power rail instead of the FIVR.
At 406, the FIVR duty cycle is stored (e.g., by the FCM). This will allow it to be used later for restart with the same duty cycle for the LVR to FIVR transition. Next, at 408, the LVR output stage is enabled to drive the output (VCCOUT) in open loop mode. Next, at 410, the FIVR phases are shut down, as the FIVR is deactivated. At 412, the LVR is then set for close loop operation. At this point, the LVR is driving the output rail. At 414, the FIVR may be powered off, and the VCCIN voltage is lowered to the lower level (e.g., 1.3 V).
At 506, the IVR phases are enabled. During this time, both the IVR and LVR will drive the output for a short time. Next, at 508, the LVR output stage is disabled. Finally, at 510, the LVR is powered off.
In the preceding description and following claims, the following terms should be construed as follows: The terms “coupled” and “connected,” along with their derivatives, may be used. It should be understood that these terms are not intended as synonyms for each other. Rather, in particular embodiments, “connected” is used to indicate that two or more elements are in direct physical or electrical contact with each other. “Coupled” is used to indicate that two or more elements co-operate or interact with each other, but they may or may not be in direct physical or electrical contact.
The term “PMOS transistor” refers to a P-type metal oxide semiconductor field effect transistor. Likewise, “NMOS transistor” refers to an N-type metal oxide semiconductor field effect transistor. It should be appreciated that whenever the terms: “MOS transistor”, “NMOS transistor”, or “PMOS transistor” are used, unless otherwise expressly indicated or dictated by the nature of their use, they are being used in an exemplary manner. They encompass the different varieties of MOS devices including devices with different VTs, material types, insulator thicknesses, gate(s) configurations, to mention just a few. Moreover, unless specifically referred to as MOS or the like, the term transistor can include other suitable transistor types, e.g., junction-field-effect transistors, bipolar-junction transistors, metal semiconductor FETs, and various types of three dimensional transistors, MOS or otherwise, known today or not yet developed.
The invention is not limited to the embodiments described, but can be practiced with modification and alteration within the spirit and scope of the appended claims. For example, it should be appreciated that the present invention is applicable for use with all types of semiconductor integrated circuit (“IC”) chips. Examples of these IC chips include but are not limited to processors, controllers, chip set components, programmable logic arrays (PLA), memory chips, network chips, and the like.
It should also be appreciated that in some of the drawings, signal conductor lines are represented with lines. Some may be thicker, to indicate more constituent signal paths, have a number label, to indicate a number of constituent signal paths, and/or have arrows at one or more ends, to indicate primary information flow direction. This, however, should not be construed in a limiting manner. Rather, such added detail may be used in connection with one or more exemplary embodiments to facilitate easier understanding of a circuit. Any represented signal lines, whether or not having additional information, may actually comprise one or more signals that may travel in multiple directions and may be implemented with any suitable type of signal scheme, e.g., digital or analog lines implemented with differential pairs, optical fiber lines, and/or single-ended lines.
It should be appreciated that example sizes/models/values/ranges may have been given, although the present invention is not limited to the same. As manufacturing techniques (e.g., photolithography) mature over time, it is expected that devices of smaller size could be manufactured. In addition, well known power/ground connections to IC chips and other components may or may not be shown within the FIGS, for simplicity of illustration and discussion, and so as not to obscure the invention. Further, arrangements may be shown in block diagram form in order to avoid obscuring the invention, and also in view of the fact that specifics with respect to implementation of such block diagram arrangements are highly dependent upon the platform within which the present invention is to be implemented, i.e., such specifics should be well within purview of one skilled in the art. Where specific details (e.g., circuits) are set forth in order to describe example embodiments of the invention, it should be apparent to one skilled in the art that the invention can be practiced without, or with variation of, these specific details. The description is thus to be regarded as illustrative instead of limiting.
