Patent Application
20110041909
The present invention relates to a dye-sensitized solar cell that includes a wiring part adjacent to a porous oxide semiconductor layer.
A dye-sensitized solar cell uses an electrolyte that erodes metal. For this reason, if collective wiring for reducing the collective resistance of a cell is provided, a wiring protective layer for protecting the collective wiring from the electrolyte is required. However, if the wiring protective layer is formed on both side portions of the collective wiring, the thickness of the wiring protective layer is added to the width of the wiring. For this reason, the width of the entire wiring tends to increase.
Since a silicon-based solar cell in the related art does not use an electrolyte, the wiring protective layer is not necessary. Accordingly, the surface of the collective wiring has metal luster due to its exposed metal surface. Therefore, even though entering a wiring portion, incident light is reflected by the surface of the wiring and light is scattered in a panel. As a result, it may be possible to effectively use the energy of incident light. However, in the dye-sensitized solar cell, light entering the wiring portion is absorbed in the cell and is converted into heat for the following reasons disclosed in (1) and (2). Accordingly, there is a drawback that the use efficiency of light is significantly decreased due to energy loss.
(1) The wiring of the dye-sensitized solar cell is generally made of a silver paste that contains low melting point glass as a binder, and low melting point glass generally has a dark color. For this reason, the color of the surface becomes dark after the formation of the wiring, so that light entering the wiring portion is absorbed.
(2) A material used in the wiring protective layer is also generally transparent or has a dark color. Accordingly, light is absorbed by a dark-colored wiring protective layer or a dark-colored electrolyte existing on the back side of a transparent wiring protective layer.
A method of guiding incident light to a power generating part by a lens or the like has been considered in order to reduce the loss due to a non-power generating part formed by wiring. For example, a prismatic cover is disclosed in Non-patent Document 1. Further, a method using a condenser lens array is disclosed in Patent Documents 1 and 2.
In Patent Document 3, a lens is formed at a transparent portion between solar cell elements in order to make the illuminance of transmitted light be uniform when light entering between solar cell elements of a solar cell module is made to pass through the back surface of the solar cell module and is used in daylighting.
A dye-sensitized solar cell where a phosphor is disposed on a transparent substrate of a dye-sensitized solar cell is described in Patent Document 4. The dye-sensitized solar cell increases power generation efficiency by converting a part of incident light into light that has a wavelength corresponding to high photoelectric conversion quantum efficiency.
Non-patent Document 1: Hamakawa Yoshihiro and Kuwano Yukinori, ADVANCED ELECTRONICS SERIES I-3, “solar energy engineering; solar cell”, BAIFUKAN CO., LTD, 1994, 4-1-5 high-efficiency single-crystalline silicon solar cell, p. 93-94
Patent Document 1: International Publication No. 98/31054
Patent Document 2: Japanese Patent Application Laid-Open (JP-A) No. 10-51020
Patent Document 3: JP-A No. 11-135813
Patent Document 4: JP-A No. 2004-171815
However, in the methods disclosed in Non-patent Document 1 and Patent Documents 1 and 2, the cost of the lens array or the cover is large and exclusive design is needed. For this reason, the methods could not be easily applied so as to correspond to the shapes of various cells. The low degree of freedom in design may lose advantages of a dye-sensitized solar cell that allows colors or shapes thereof to be variously changed and to realize making various kinds of products in small lots.
The solar cell module disclosed in Patent Document 3 uses light, which is transmitted through the lens, in daylighting on the back side of the module, and does not use the light in the power generation of the solar cell element.
The solar cell module disclosed in Patent Document 4 improves power generation efficiency in light absorption using a high-concentration iodine electrolyte. However, the particular coping of the metal wiring layer is not disclosed.
An object of the present invention is to provide a dye-sensitized solar cell that can improve power generation efficiency by suppressing light absorption of a wiring part.
In order to achieve the above-mentioned object, a the present invention provides a dye-sensitized solar cell that includes a first electrode substrate and a wiring part on a side of one surface thereof, a dye being carried on the porous oxide semiconductor layer, and the wiring part being provided at a portion adjacent to the porous oxide semiconductor layer;
a second electrode substrate that is disposed so as to face the porous oxide semiconductor layer of the first electrode substrate; and
an electrolyte layer that is disposed at least at a part of a gap between the first and second electrode substrates,
wherein at least one of the first electrode substrate, the wiring part, and the second electrode substrate is provided with an incident light direction changing part that changes the direction of incident light at a position corresponding to the wiring part.
According to the dye-sensitized solar cell, the direction of light entering the wiring part, which is a non-power generating part, can be changed to be directed to the porous oxide semiconductor layer on which a dye, that is, the power generating part is carried, by the incident light direction changing part.
The incident light direction changing part may be, for example, a film.
The film may be at least one of, for example, a diffusion film, a diffraction grating film, a fluorescent coating film, and a reflective film.
The incident light direction changing part is preferably provided on a line, which connects the first electrode substrate, the wiring part, and the second electrode substrate, and provided on a line along a thickness direction of the first or second electrode substrate.
The above dye-sensitized solar cell may have a structure where the first electrode substrate is a transparent electrode substrate and the incident light direction changing part is provided on the opposite side of the wiring part with respect to the first electrode substrate.
Further, the above dye-sensitized solar cell may have a structure where the first electrode substrate is a transparent electrode substrate, the wiring part includes a collective wiring and a wiring protective layer that is provided so as to cover the collective wiring, and the wiring protective layer includes the incident light direction changing part.
Furthermore, the above dye-sensitized solar cell may have a structure where the first electrode substrate is a transparent electrode substrate, the wiring part includes a collective wiring and a wiring protective layer that is provided so as to cover the collective wiring, and the incident light direction changing part is provided between the collective wiring and the first electrode substrate.
In addition, the above dye-sensitized solar cell may have a structure where the second electrode substrate is a transparent electrode substrate, and the incident light direction changing part is provided on the opposite side of the first electrode with respect to the second electrode substrate.
Moreover, the above dye-sensitized solar cell may have a structure where the second electrode substrate is a transparent electrode substrate, the wiring part includes a collective wiring and a wiring protective layer that is provided so as to cover the collective wiring, and the wiring protective layer includes the incident light direction changing part.
The width of the film may be larger than the width of the wiring part and the film may be disposed in a range that does not overlap the adjacent porous oxide semiconductor layer.
According to the present invention, the direction of light entering the wiring part, which is a non-power generating part, can be changed to be directed to the porous oxide semiconductor layer on which a dye, that is, the power generating part is carried, by the incident light direction changing part.
The present invention will be described below with reference to drawings, on the basis of a preferred embodiment.
A dye-sensitized solar cell 10 shown in
A dye-sensitized solar cell 20 shown in
A dye-sensitized solar cell 30 shown in
In the present invention, the film bodies 18, 24, 38, and 44, which change the direction of incident light, are provided at positions corresponding to the wiring parts 19, 29, 39, and 49, respectively. That is, if the film bodies 18, 24, 38, and 44 are not provided, incident light, which enters and is absorbed in the collective wirings 13, 23, 33, and 43 or the wiring protective layers 14, 24, 34, and 44, enters the film bodies 18, 24, 38, and 44. The direction of the incident light, which enters the film bodies 18, 24, 38, and 44, is changed by the film bodies 18, 24, 38, and 44, and at least a part of the incident light enters the porous oxide semiconductor layers 15, 25, 35, and 45 that are power generating parts. Accordingly, it may be possible to suppress the energy loss of incident light and to improve power generation efficiency.
In the dye-sensitized solar cell 10 according to the first embodiment shown in
In the dye-sensitized solar cell 20 according to the second embodiment shown in
In the dye-sensitized solar cell 30 according to the third embodiment shown in
Meanwhile, as in a dye-sensitized solar cell 40 according to a fourth embodiment (see
Further, if both the first and second electrode substrates are formed of a transparent electrode substrate, any one of the above-mentioned first to fourth embodiments may be applied.
Further, in the embodiments shown in
The diffusion film is not particularly limited. However, as the diffusion film, there may be a diffusion film that is formed so as to scatter incident light by adding transparent beads of which the refractive index is different from the refractive index of a transparent resin, scattering particles of which the refractive index is higher than the refractive index of the transparent resin, or the like to the transparent resin, for example. The diffusion film may be an isotropic film or an ansiotropic film, and it is preferable that the diffusion film scatter light in a direction perpendicular to the wiring (that is, in a horizontal direction in
The diffraction grating film is not particularly limited. However, as the diffraction grating film preferably used is the diffraction grating film of which the number of grids and the diffraction direction are set so that the direction of light, which has a wavelength of 500 to 600 nm (for example, a wavelength of 550 nm) and high photoelectric conversion quantum efficiency, of incident light is changed and the light enters the porous oxide semiconductor layer. A diffraction grating film is formed by attaching a film, where a diffraction grating is previously formed, to the surface of a substrate. Alternatively, a diffraction grating film may also be formed by forming a film on the surface of a substrate through the attachment of a film or the formation of a coating film and then forming a diffraction grating on the film.
The fluorescent coating film is not particularly limited. However, it is preferable that the following fluorescent coating film be used as the fluorescent coating film. That is, the fluorescent coating film uses a material, which efficiently emits light having a wavelength of 500 to 600 nm (for example, a wavelength of 550 nm) and high photoelectric conversion quantum efficiency, as a phosphor. As a first example of the fluorescent coating film, there may be a film that is formed by applying a solution where a phosphor is dissolved or dispersion liquid where a phosphor is dispersed to a transparent substrate and drying the solution or the dispersion liquid. As a second example of the fluorescent coating film, there may be a film that is formed by attaching a plastic film, which contains a phosphor, to the surface of a transparent substrate. The plastic film is made of a material, which is obtained by adding a phosphor to a transparent resin, such as an acrylic resin, a urethane resin, or a cellulose-based resin, and formed in the shape of a film. As a third example of the fluorescent coating film, there may be a film that is formed by attaching a plastic film, to which a phosphor is applied, to the surface of a transparent substrate. The plastic film is formed by applying a solution such as fluorescent coating, where a phosphor is dissolved, to a transparent plastic film, such as a polyethylene terephthalate film or a cellulose-based resin film, and drying the solution.
As the phosphor in the fluorescent coating film, there is used a phosphor that has a function to convert light having a wavelength of at least 500 nm or less into light having a wavelength of 500 to 600 nm. Specifically, there are organic phosphors, such as fluorescein (490 nm→520 nm), eosin, and rhodamine B; inorganic phosphors, such as calcium halo-phosphate and cadmium telluride. Further, an inorganic phosphor having high heat resistance may be melted and contained in glass that forms a transparent substrate. If a transparent substrate is formed of a plastic film, an inorganic phosphor having high heat resistance may be kneaded in the transparent substrate. The concentration of a phosphor in the fluorescent coating film is sufficient in the range of about 0.1 to 1 wt %, and it is preferable to adjust the amount of the added phosphor so that light absorption caused by the phosphor itself is not excessively increased. Furthermore, the thickness of the fluorescent coating film is not particularly limited. However, it is preferable that the thickness of the fluorescent coating film be small.
The reflective film is not particularly limited. However, as the reflective film, there may be a coating film or the like that is whitened by previously mixing high refractive index particles, which are made of a titanium oxide or the like, in ink for forming a wiring protective film. It is preferable that the average particle size of the high refractive index particle be in the range of 200 to 600 nm. Further, as for the coating film, it is preferable to disperse ink well so that aggregated secondary particles having a particle size of 1 μm or more cannot be generated.
Even in all of the above-mentioned cases, it is preferable that the widths of the film bodies 18, 24, 38, and 44 changing the direction of incident light be larger than those of the wiring parts 19, 29, 39, and 49 and the film bodies be disposed in the ranges not overlapping the adjacent porous oxide semiconductor layers 15, 25, 35, and 45. Accordingly, even though the film bodies are not provided, the incident light, which reaches the power generating parts, that is, the porous oxide semiconductor layers 15, 25, and 35, is not prevented from reaching the power generating parts. Accordingly, it may be possible to make the incident light, which is to reach non-power generating parts if the film bodies are not provided, efficiently reach the power generating parts. Further, the provision of the film on the surface of the substrate may also be applied to non-power generating parts such as connectors or portions between cells.
Furthermore, when the film bodies 18 and 38 are provided on the surfaces 11a and 31a of the transparent electrode substrates 11 and 31 becoming window electrodes as shown in
Meanwhile, even though the film bodies 18 and 38 are disposed as described above, it may also be possible to respond to a case where incident light L enters obliquely from a specific direction.
As long as a substantially transparent substrate is formed, glass, a resin, ceramics, and the like may be used as the base materials of the transparent electrode substrates 11, 21, 31, and 41 without limitation. When the porous oxide semiconductor layer is fired, it is particularly preferable to use high-strain-point glass in terms of excellence in heat resistance so that the deformation, metamorphosis, and the like of the substrate do not occur. However, it is also preferable to use soda lime glass, glass which is made of soda lime and whose iron component is less than that of ordinary soda lime glass, borosilicate glass, and the like.
The materials of the transparent conductive films 12, 22, 32, and 42 are not particularly limited. However, conductive metal oxides, for example, a tin-doped indium oxide (ITO), a tin oxide (SnO2), and a fluorine-doped tin oxide (FTC) may be used as the materials of the transparent conductive films. A well-known appropriate method corresponding to the material may be used as a method of forming the transparent conductive film. For example, sputtering, deposition, SPD, CVD, and the like may be used as the method of forming the transparent conductive film. Further, the transparent conductive film is usually formed in a thickness of about 0.001 μm to 10 μm in consideration of optical transparency and electrical conductivity.
The collective wiring 13, 23, and 33 is obtained by forming metal, such as gold, silver, copper, platinum, aluminum, nickel, and titanium, as wiring by, for example, a grid-like pattern, a striped pattern, and a comb-like pattern. In order not to significantly deteriorate the optical transparency of the electrode substrate, it is preferable to finely form the wiring so that the width of each wiring be 1000 μm or less. The thickness (height) of each wiring is not particularly limited. However, it is preferable that the thickness (height) of each wiring be in the range of 0.1 to 20 μm.
As a method of forming the collective wiring, there is, for example, a method that includes mixing a binder such as fine glass particles with metal powder, which forms conductive particles, and forming the mixture in the shape of a paste; forming a coating film with the mixture so as to form a predetermined pattern by a printing method, such as a screen printing method, a dispense method, a metal mask method, an inkjet method or the like; and fusing the conductive particles by firing. For example, if the substrate is a glass substrate, firing temperature may be preferably 600° C. or less and more preferably 550° C. or less. Sputtering, deposition, plating, and the like may also be used as other methods of forming collective wiring. In terms of electrical conductivity, it is preferable that the volume resistivity of the collective wiring be 10−5 Ω·cm or less.
Each of the wiring protective layers 14 and 34 may include one or more glass layers made of low melting point glass, and may include one or more insulating resin layers made of a heat-resistant resin. Further, each of the wiring protective layers may include at least two of these glass layers and the insulating resin layers.
The glass layer, which may be used as the wiring protective layer, is made of low melting point glass. Lead-containing glass such as a lead borate-based glass may be generally used as the low melting point glass. However, it is more preferable that glass not containing lead be used in consideration of environmental burden. For example, low melting point glass materials, such as borosilicate bismuth salt-based/acidum boricum bismuth zinc salt-based glass materials, aluminophosphate-based/zinc phosphate-based glass materials, and borosilicate salt-based glass materials may be used. The glass layer may be formed by mixing a plasticizer or other additives in low melting point glass, which contains one or several kinds of low melting point glass materials and is used as a main ingredient, according to need for the adjustment of a coefficient of thermal expansion or viscosity; forming the mixture in the shape of a paste; applying the mixture by a method such as screen printing dispense or the like; and firing the applied mixture. The glass layer may be made to form multiple layers by using the same paste or different pastes.
An insulating resin layer, which may be used as the wiring protective layer, is made of a heat-resistant resin. The heat-resistant resin, which has heat resistance so as to withstand at least the firing of the porous oxide semiconductor layer, is selected. As the heat-resistant resin, one selected from a polyimide derivative, a silicone compound, a fluoroelastomer, a fluororesin, and the like may be used alone or several kinds of materials selected from them may be used together by mixing, laminating, or the like. One or more selected from Teflon (registered trademark)-based compounds, such as polytetrafluoroethylene, a tetrafluoroethylene-perfluoro (alkyl vinyl ether) copolymer and a tetrafluoroethylene-hexafluoropropylene copolymer, may be used as the fluororesin. Further, concern of impact fracture, crack or the like of the wiring protective layer, is reduced by applying a flexible resin material to the insulating resin layer. As a method of forming the insulating resin layer, there is a method of forming a coating film with a paste or varnish containing an insulating resin. In terms of improvement of the denseness of the insulating resin layer, it is preferable that the wiring protective layer be formed of several layers by repeating the forming of a coating film several times.
The wiring protective layer includes a glass layer made of glass ingredients. Accordingly, it may be possible to suppress the deterioration or leakage (reduction of the amount) of the electrolyte. Further, the insulating resin layer made of a heat-resistant resin is formed on the glass layer as an overcoat. Accordingly, glass ingredients in the glass layer do not come into contact with the electrolyte and it may be possible to prevent the ingredients in glass from reacting with the ingredients in the electrolytes.
Further, the glass layer prevents gas permeation. Accordingly, in order to intend to obtain only an effect of preventing gas permeation, a heat-resistant resin or a heat-resistant adhesive, which can be fired at a high temperature, does not need to be used as the insulating resin layer. In this case, there may be formed an insulating resin layer that forms an overcoat by applying an adhesive that has low heat resistance or laminating a hot-melt adhesive. In particular, if the insulating resin layer is formed by laminating the hot-melt adhesive, the poisoning of a working electrode is small. Accordingly, it may be possible to obtain good characteristics that are similar to the characteristics of a heat-resistant resin or a heat-resistant adhesive.
The low melting point glass layer and the heat-resistant resin layer may be formed by applying one or several kinds of materials several times, respectively. In terms of the compensation of defects such as pinholes generated during printing and the improvement of the denseness of the protective layer, it is more preferable that the low melting point glass layer and the heat-resistant resin layer be formed of a plurality of layers.
It is preferable that the thickness of the insulating resin layer as an overcoat of the glass layer be 1 μm or more. If the overcoat is excessively thin, the flexibility of the resin is not utilized and there is a possibility that the surface of opposing counter electrode is damaged. Further, there is a possibility that the resin layer itself may be damaged due to the mixing of foreign materials and the like or the handling during the manufacture of elements.
The wiring protective layer does not need to be formed to be excessively thick, and the total thickness of the wiring protective layer had better not exceed 100 μm.
The wiring protective layers 24 and 44 include the reflective films as described above. The reflective films further include high refractive index particles such as titanium oxide particles in the insulating resin layers or glass layers that form the above-mentioned wiring protective layers 14 and 34.
The porous oxide semiconductor layers 15, 25, 35, and 45 are formed by forming porous films by firing nanoparticles (fine particles having an average particle size of 1 to 1000 nm) of oxide semiconductors and sensitizing a dye.
One or more selected from a titanium oxide (TiO2), a tin oxide (SnO2), a tungsten oxide (WO3), a zinc oxide (ZnO), a niobium oxide (Nb2O5) may be used as the oxide semiconductor. The thickness of the porous oxide semiconductor layer may be in the range of, for example, 0.5 to 50 μm.
As a method of forming the porous oxide semiconductor layer, an electrophoretic deposition method of immersing a substrate in a colloid solution and depositing oxide semiconductor fine particles on the substrate by electrophoresis may be applied other than applying a dispersion liquid that is obtained by dispersing for example, commercial oxide semiconductor fine particles in a desired dispersion medium, or a colloid solution that can be adjusted by a sol-gel method by a well-known coating method, such as a screen printing method, an inkjet printing method, a roll coating method, a doctor blade method, a spin coating method, or a spray coating method, after adding a desired additive according to need.
The sensitized dye, which is carried on the porous oxide semiconductor layer, is not particularly limited. The sensitized dye may be appropriately selected from a ruthenium complex or an iron complex including ligands with a bipyridine structure, a terpyridine structure, or the like; porphyrin- or phthalocyanine-based metal complexes; and an organic dye that is a derivative, such as eosin, rhodamine, coumalin, and merocyanine, according to use or a material of the oxide semiconductor porous film.
The electrode substrates 16, 26, 36, and 46 are not particularly limited. However, specifically, electrode substrates, which are formed by forming catalyst layers 16b, 26b, 36b, and 46b made of platinum, carbon, a conductive polymer or the like on the surfaces of the base materials 16a, 26a, 36a, and 46a, such as metal plates, metal foil, glass plates or the like, may be used as the electrode substrates. In order to improve electrical conductivity at the surfaces of the electrode substrates, another conductive layers may be formed between the base materials 16a, 26a, 36a, and 46a and the catalyst layers 16b, 26b, 36b, and 46b.
Room-temperature molten salt (ionic liquid) or an organic solvent including redox pairs may be used as an electrolyte that forms the electrolyte layers 17, 27, and 37. Further, a material that is artificially solidified by introducing an appropriate gelling agent (for example, a polymer gelling agent, a low-molecular gelling agent, various nanoparticles, carbon nanotubes or the like) into an electrolyte, so-called gel electrolyte may be used instead of the electrolyte.
The organic solvent is not particularly limited. However, one or more of acetonitrile, methoxyacetonitrile, propionitrile, methoxypropionitrile, propylene carbonate, diethyl carbonate, γ-butyrolactone, and the like are exemplified as the organic solvent. Further, one or more room-temperature molten salts are exemplified that include cations such as imidazolium-based cations, pyrrolidinium-based cations, and pyridinium-based cations; and anions, such as iodide ions, bis(trifluoromethanesulfonyl)imide anions, dicyanamide anions, and thiocyanic acid anions.
The redox pair included in the electrolyte is not particularly limited. However, the redox pair may be obtained by adding one or more of pairs of iodine/iodide ions, bromine/bromide ions, and the like. The lithium salt, quaternized imidazolium salt, tetrabutylammonium salt, and the like containing these anions may be used alone or several kinds thereof may be combined as a supply source of iodide ions or bromide ions. Additives, such as 4-tert-butyl pyridine, N-methylbenzimidazole, guanidium salt or the like, may be added to the electrolyte, according to need.
The dye-sensitized solar cell according to this embodiment can be manufactured according to, for example, the following procedure.
As shown in
If the second electrode substrate 31, which is a counter electrode, is formed of a transparent electrode substrate as shown in
A method of disposing the electrolyte layer between both the electrode substrates is not particularly limited. However, if an electrolyte is used, there may be used a method of making the working electrode and the counter electrode face each other, sealing the peripheries of both the electrodes by a resin, an adhesive or the like, and injecting an electrolyte through an injection hole that is appropriately formed. Further, if a gel electrolyte is used, there may be used a method of applying the gel electrolyte onto the working electrode and attaching the counter electrode to the working electrode on which the gel electrolyte has been applied.
If the film 18 or 38 changing the direction of incident light is provided on the surface 11a or 31a of the transparent electrode substrate 11 or 31 as described in the first and third embodiments, the film bodies may be provided on the surfaces of the substrates before the working electrode and the counter electrode face each other and may be provided after the working electrode and the counter electrode face each other.
If the film for changing the direction of incident light also functions as a wiring protective layer as described in the second and fourth embodiments, a film for changing the direction of incident light may be formed as a wiring protective layer.
Even in any case, the film for changing the direction of incident light is provided at a position corresponding to the wiring part. Accordingly, it may be possible to suppress the energy loss of incident light and to improve power generation efficiency.
Furthermore, in each of the first to fourth embodiments, an incident light direction changing part is the film. However, the incident light direction changing part is not limited to the film. For example, the first electrode substrate, the wiring part, or a diffraction grating pattern formed on the second electrode substrate may be used as the incident light direction changing part.
Further, in each of the first to fourth embodiments, the wiring part includes the collective wiring and the wiring protective layer. However, the wiring part may be formed of only the collective wiring.
The present invention will be described in detail below with reference to examples. Meanwhile, the present invention is not limited to these examples.
(Manufacture of Dye-Sensitized Solar Cell)
A glass substrate (which had a size of 140 mm square and on which a FTO film as a transparent conductive film was formed) was prepared, and a silver circuit pattern was formed in a grid shape on the FTO film by screen printing. The form of the circuit pattern was designed so as to have a width of 300 μm and a thickness of 10 μm. A silver paste, which had a volume resistivity of 3×10−6 Ω·cm after sintering, was used as a silver paste for printing, and was dried at a temperature of 130° C. after being printed. Further, the silver circuit pattern was sintered at a maximum temperature of 510° C., so that a circuit was formed.
After that, a low melting point glass paste as a first wiring protective material was applied and overlapped with a circuit forming portion to completely cover the silver circuit pattern, so that a print coating film made of glass was formed. The design width of the first wiring protective layer was set to 500 μm, and a coating film was formed by screen printing while the print coating film was aligned with the silver circuit pattern by using a CCD camera. After the print coating film was dried at a temperature of 130° C., a paste containing TiO2 nanoparticles was applied to portions, where the silver circuit and a wiring protective layer were not formed, on the FTO layer of the electrode substrate by screen printing and was dried. After the drying of these, the first wiring protective layer (only a portion where application was performed one time) and the porous oxide semiconductor layer were sintered at a maximum temperature of 500° C. Furthermore, in order to increase the thickness of the first wiring protective layer, the first wiring protective layer was formed by repeating the formation and sintering of the print coating film, which was made of glass, several times on the portion where application was performed one time.
In addition, resin liquid (polyimide varnish) of a heat-resistant resin as a second wiring protective material was applied so as to completely cover the first wiring protective layer, a resin coating film was treated at a maximum temperature of 350° C., and this was repeated, so that a second wiring protective layer was formed. The design width of the second wiring protective layer was set to 800 μm, and a coating film was formed by screen printing while the second wiring protective layer was aligned with the silver circuit pattern by using a CCD camera.
In addition, immersion was performed in an acetonitrile/t-butanol solution of ruthenium-bipyridine complex (N719 dye) for one day or more days and the dye was carried, so that a photoelectrode was formed.
Titanium (Ti) foil on which a platinum (Pt) layer was formed by sputtering was used as a counter electrode. An electrolyte solution including iodine redox couples was spread on the photoelectrode in a circulating purification type globe box that was filled with inert gas. Then, the photoelectrode was laminated so as to face the counter electrode. After that, the peripheries of the elements were sealed by an ultraviolet curable resin.
Comparative example 1 is a dye-sensitized solar cell that is manufactured by only the above-mentioned process without forming a film for changing the direction of incident light. In this case, photoelectric conversion efficiency was 5.18%.
In Example 1, a diffusion film (having a transmittance of 85% and a diffusion angle of 60°) having an isotropic diffusion characteristic was attached to a position on the surface of the substrate of the window electrode facing the silver circuit pattern, that is, the surface on the opposite side of the silver circuit pattern with respect to the substrate of the window electrode. In this case photoelectric conversion efficiency was 5.31%. An improvement ratio of the conversion efficiency of Example 1 to that of Comparative example 1 was about 2.5%.
In Example 2, a diffusion film was formed by applying diffusion ink for a light guide plate at a position on the surface of the substrate of the window electrode facing the silver circuit. In this case photoelectric conversion efficiency was 5.30%. An improvement ratio of the conversion efficiency of Example 2 to that of Comparative example 1 was about 2.3%.
In Example 3, a diffraction grating, which corresponded to a dispersion angle of 36° and 1000 lines/mm, was formed at a position on the surface of the substrate of the window electrode facing the silver circuit. In this case photoelectric conversion efficiency was 5.28%. An improvement ratio of the conversion efficiency of Example 3 to that of Comparative example 1 was about 1.9%.
In Example 4, a fluorescent coating film was formed by attaching a mending tape (manufactured by Sumitomo 3M Ltd.), which was colored by yellow fluorescent coating (yellow highlighter pen manufactured by Zebra Co., Ltd.), at a position on the surface of the substrate of the window electrode facing the silver circuit. In this case photoelectric conversion efficiency was 5.24%. An improvement ratio of the conversion efficiency of Example 4 to that of Comparative example 1 was about 1.2%.
In Example 5, a reflective film was formed on the surface of the wiring protective layer by using the mixture of 5 wt % of titania particles (having an average particle size of 400 nm) and a polyimide varnish used as a second wiring protective material while a low melting point glass paste used as a first wiring protective material was the same as that of Comparative example 1. In this case photoelectric conversion efficiency was 5.25%. An improvement ratio of the conversion efficiency of Example 5 to that of Comparative example 1 was about 1.4%.
(Results of Measurement of Photoelectric Conversion Efficiency)
Here, photoelectric conversion efficiency is a measured value of the energy efficiency of photoelectric conversion under 1Sun pseudo sunlight (AM1.5). The results of measurement of the photoelectric conversion efficiency were summarized as shown in Table 1.
As described in the above results, in Examples 1 to 5, conversion efficiency was improved by about 1.2 to 2.5% with respect to the conversion efficiency of Comparative example 1. Meanwhile, a solar cell having an aperture ratio of 90% was used in the examples. Accordingly, even though the incident light entering a wiring portion could be completely used, the limitation of the improvement ratio of conversion efficiency is 11%. Accordingly, according to the examples, it may be possible to use about 10 to 23% of incident light, which enters the wiring portion, for power generation.
As long as the present invention is a dye-sensitized solar cell that includes wiring parts adjacent to a porous oxide semiconductor layer, the present invention may be used to improve conversion efficiency without being limited to a form, such as a cell, an array, and a module.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2008-026817 | Feb 2008 | JP | national |
| Number | Date | Country | |
|---|---|---|---|
| Parent | PCT/JP2009/000389 | Feb 2009 | US |
| Child | 12852018 | US |
