"Phase Formation Study in .alpha.-Al.sub.2 O.sub.3 Implanted With Niobium Ions", by L. Romana et al., Nuclear Instruments and Methods in Physics Research B46, published by Elsevier Science Publishers B.V. (North-Holland), pp. 94-97 (1990). |
"Surface Electrical Properties of Ni-implanted Sapphire", by L. Shipu et al., Processing of Advanced Materials, published by Chapman & Hall, pp. 77-80 (1991). |
"Creep of Sensor's Elastic Elements: Metals Versus Non-metals", by K. Bethe et al., Nova Sensor --Silicon Sensors and Microstructures, 1990, pp. 844-849. |
"Silicon Sensors and Microstructures," by J. Brysek et al., Nova Sensor,Jun. 1990, pp. 5.4-5.8, 8.21-8.23, 9.9-9.10, 9.13-9.15. |
"A Balanced Resonant Pressure Sensor", by E. Stemme et al., Sensors and Actuators, A21-A23, 1990, pp. 336-341. |
"Fabrication of an Implantable Capacitive Type Pressure Sensor", by S. Shoji et al., Transducers '87, 1987. |
"Silicon-to-Silicon Direct Bonding Method", by M. Shimbo et al., J. Appl. Phys., vol. 60, No. 8, Oct. 15, 1986, pp. 2987-2989. |
"Low-Temperature Preparation of Silicon/Silicon Interfaces by the Silicon-to-Silicon Direct Bonding Method", by S. Bengtsson et al., J. Electrochem. Soc., vol. 137, No. 7, Jul. 1990, pp. 2297-2303. |
"Interface Charge Control of Directly Bonded Silicon Structures", by S. Bengtsson et al., J. Appl. Phys., vol. 66, No. 3, Aug. 1, 1989, pp. 1231-1239. |
"Wafer Bonding for Silicon-on-Insulator Technologies", by J.B. Lasky, Appl. Phys Lett., vol. 48, No. 1, Jan. 1, 1986, pp. 78-80. |
"Small Sensitive Pressure Transducer for Use at Low Temperatures", by W. Griffioen et al., Rev. Sci. Instrum., vol. 56, No. 6, Jun. 1985, pp. 1236-1238. |
"High-Temperature Healing of Lithographically Introduced Cracks in Sapphire", by J. Rodel et al., J. Am. Ceram. Soc., vol. 73, No. 3, Mar. 1990, pp. 592-601. |
"Production of Controlled-Morphology Pore Arrays: Implications and Opportunities", by J. Rodel et al., J. Am. Ceram. Soc., vol. 70, No. 8, Aug. 1987, pp. C-172-C-175. |