Claims
- 1. A semiconductor laser structure comprising:
a substrate; a plurality of III-V nitride semiconductor layers formed on said substrate, at least one of said plurality of III-V nitride semiconductor layers forms an active region; a first semiconductor layer being p-type, a second semiconductor layer formed on said first semiconductor layer, said second semiconductor layer being n-type, tunnel junction means disposed between said first semiconductor layer and said second semiconductor layer for injecting current into said active region; and wherein a sufficient forward bias is applied to said active region to cause lasing from an edge of said semiconductor laser structure.
- 2. The semiconductor laser structure of claim 1 wherein said first semiconductor layer is a p-type III-V nitride semiconductor, and said second semiconductor layer is an n-type III-V nitride semiconductor.
- 3. The semiconductor laser structure of claim 1 wherein said first semiconductor layer is a p-type III-V nitride semiconductor, and said second semiconductor layer is an n-type oxide semiconductor.
- 4. The semiconductor laser structure of claim 1 wherein a plurality of said plurality of III-V nitride semiconductor layers are n-type.
- 5. The semiconductor laser structure of claim 1 wherein said tunnel junction means is reverse biased.
- 6. The semiconductor laser structure of claim 1 wherein one of said plurality of III-V nitride semiconductor layers is a electron blocking layer formed on said active region, said electron blocking layer is a p-type III-V nitride semiconductor, and said first semiconductor layer is formed on said electron blocking layer.
- 7. The semiconductor laser structure of claim 1 wherein said substrate is sapphire, silicon carbide, spinel, aluminum nitride or gallium nitride.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application contains subject matter that is related to subject matter of U.S. Patent Application Serial. No. (Attorney Docket D/A1350Q) entitled “NITRIDE-BASED VCSEL OR LIGHT EMITTING DIODE WITH P-N TUNNEL JUNCTION CURRENT INJECTION”, filed concurrently with this application, commonly assigned to the same assignee herein and herein incorporated by reference.