Claims
- 1. An analog memory circuit, comprising:
- a plurality of serially coupled switched resistor signal converter cells each having a control input and an analog voltage output that is predeterminally related in magnitude to analog voltage outputs of others of said converter cells;
- a plurality of comparators each having a first input coupled to an analog voltage signal and a second input coupled to one of said analog voltage outputs of one of said converter cells, each of said plurality of comparators having an output for indicating whether said analog voltage signal coupled to said first input is less than or greater than an analog voltage coupled to said second input; and
- a plurality of latches individual ones of which have an input coupled to said output of one of said comparators and an output coupled to said control input of one of said converter cells;
- wherein each of said converter cells has a first input node, a second input node, a first output node and a second output node, and comprises a first resistance coupled between the first input node and the second input node; a plurality of switch means; and a second resistance, the second resistance being coupled to said plurality of switch means for being switchably coupled between, in a first state, the first input node and the first output node, and, in a second state, between the second input node and the second output node, and wherein in the first state the second output node is switchably coupled to the second input node and in the second state the first output node is switchably coupled to the first input node.
- 2. An analog memory circuit as set forth in claim 1, wherein the first input node of a converter cell is coupled to the first output node of a preceding converter cell, and wherein the second input node of the converter cell is coupled to the second output node of the preceding converter cell.
- 3. An analog memory circuit as set forth in claim 1, wherein the first resistance has a resistance value equal to twice the resistance value of the second resistance.
- 4. An analog memory circuit, comprising:
- a plurality of serially coupled switched resistor signal converter cells each having a control input and an analog voltage output that is predeterminally related in magnitude to analog voltage outputs of others of said converter cells;
- a plurality of comparators each having a first input coupled to an analog voltage signal and a second input coupled to one of said analog voltage outputs of one of said converter cells, each of said plurality of comparators having an output for indicating whether said analog voltage signal coupled to said first input is less than or greater than an analog voltage coupled to said second input; and
- a plurality of latches individual ones of which have an input coupled to said output of one of said comparators and an output coupled to said control input of one of said converter cells;
- wherein each of said plurality of converter cells, comparators and latches are formed on a common substrate.
- 5. An analog memory circuit as set forth in claim 1, wherein there are (n) converter cells connected together in a series configuration, wherein a first converter cell of the (n) circuit cells has said first input node coupled to a first reference signal, wherein the first converter cell has said second input node coupled to a second reference signal, wherein said first output node of the first converter cell is coupled to a first input node of a second converter cell, wherein said second output node of the first converter cell is coupled to a second input node of the second converter cell, wherein said switch means of each of said (n) converter cells is coupled to said output of one of said latches for being operated thereby for switching between said first state and said second state, wherein said first and the second output nodes of an (n)th one of said (n) converter cells have a terminating resistance coupled therebetween, and wherein an analog voltage output of said analog memory circuit is developed between said terminating resistance and said second resistance of said (n)th circuit cell.
Parent Case Info
This is a divisional of application(s) Ser. No. 07/883,251, filed May 13, 1992, which will issue as U.S. Pat. No. 5,402,125 on Mar. 28, 1995, which in turn is a divisional patent application of U.S. patent application Ser. No. 07/714,246, filed Jun. 12, 1991, now U.S. Pat. No. 5,202,687, issued Apr. 13, 1993.
US Referenced Citations (19)
Foreign Referenced Citations (2)
Number |
Date |
Country |
0042350 |
Dec 1981 |
EPX |
0208437A3 |
Jan 1987 |
EPX |
Non-Patent Literature Citations (1)
Entry |
Soviet Inventions Illustrated, sect. E1, week 8118, 10 Jun. 1981, Derwent blications Ltd. (London) T02. |
Divisions (2)
|
Number |
Date |
Country |
Parent |
883251 |
May 1992 |
|
Parent |
714246 |
Jun 1991 |
|