Efficient photographic flash

Information

  • Patent Grant
  • 6674247
  • Patent Number
    6,674,247
  • Date Filed
    Thursday, December 20, 2001
    22 years ago
  • Date Issued
    Tuesday, January 6, 2004
    20 years ago
Abstract
Photographic flashes use the major portion of available energy in modern cameras. A series of innovations within a photographic flash system improves the energy efficiency by a factor of 3, and thereby extends battery life. The flash system includes a precise flash-termination circuit, a high-efficiency charging circuit, a low-leakage coupled inductor, and a battery-saving charge-circuit drive.Flash termination is controlled by a majority-carrier switching device. This circuit allows termination of the flash current without the timing uncertainty or parasitic leakage associated with previous designs. Multiple flashes also can be produced by the circuit, which may be interfaced with through-the-lens flash controls.A flyback-converter charging circuit uses a coupled inductor that has an alternately layered winding pattern to lower leakage inductance drastically, and uses appropriately selected wire types to decrease skin-effect resistance losses. Because of the low leakage inductance, the charge circuit can make use of simple energy-efficient overshoot-damping circuitry. The charge circuit also increases battery life by smoothing peaks in current drawn from the battery.A new drive circuit operates the flyback converter efficiently, maintains battery current below a damage-threshold level to extend battery life, and efficiently holds the flash capacitor in a maximum charge state.
Description




BACKGROUND




1. Field of the Invention




Embodiments relate to the field of photographic flashes and in particular to efficient flash termination and charging.




2. Related Art




Photographic flashes use a high percentage of the battery power available to modem cameras. Despite the level of commercial interest in photography, electronic flashes remain highly inefficient. In a typical flash, only 30 percent of the energy drained from the battery reaches the flash capacitor.





FIG. 1

is a schematic diagram of a typical flash system. Capacitor


114


is charged from battery


108


by charge circuit


116


. To make a flash, controller


121


closes switch


120


and sends trigger signal


119


to cause trigger circuit


118


to send a pulse through electrode


112


of flash tube


110


. Trigger signal


119


partially ionizes the gas in flash tube


110


; capacitor


114


then discharges through the gas, causing a flash of light energy to be radiated. The flash stops when the voltage on capacitor


114


falls below a threshold or switch


120


is opened.




Prior-art photo flashes use minority-carrier semiconductor switching devices, also known as conductivity-modulated devices or bipolar devices, as switch


120


. Use of such devices incurs problems with timing uncertainty and parasitic power losses, due to a turn-off delay, of typically many microseconds, that depends on minority carrier storage and recombination times. Some of these flash systems emit multiple flashes of light for one picture; however, timing uncertainty lowers performance or renders the circuits complex.





FIG. 2

is a schematic diagram of flyback converter charge circuit


200


, typical in photographic flashes.

FIG. 3

is a timing diagram. Current flows through primary winding


242


of coupled inductor


241


when drive circuit


244


turns on transistor


246


, completing a circuit through primary


242


from battery


108


. Transistor gate voltage and primary voltage are shown by traces


301


and


302


, respectively, in

FIG. 3

; trace


303


shows the drain voltage of transistor


246


. When drive circuit


244


turns off transistor


246


, mutual inductance generates current in secondary winding


243


. Voltage across secondary


243


is shown by trace


304


in FIG.


3


. Diode


248


allows current to flow from secondary


243


into capacitor


114


, and not back out. Thus, the circuit charges capacitor


114


over many cycles.




Typical flyback converters have inefficient coupled inductors that waste power, and that can create overshoot voltages at transistor


246


, potentially damaging it. Also, the current drained from battery


108


may have steep spikes and dips, lowering battery life.





FIGS. 4A and 4B

are cross-section illustrations of the winding of a typical coupled inductor. Primary winding


242


is wound around plastic bobbin


460


; then, insulation


468


is placed over winding


242


; finally, layers of secondary winding


243


are wound over insulation


468


. Ferrite core


250


with axis


464


is made in two halves,


455


and


456


. Plastic bobbin


460


supports windings


242


and


243


, shown with an “X.”




Typical coupled inductors suffer from primary-winding leakage inductance and skin effect. Leakage inductance is caused by poor magnetic-field coupling between primary winding


242


and secondary winding


243


. Primary leakage inductance causes overshoot voltages that can damage switching transistor


246


. Skin effect causes energy losses by increasing the impedance of the windings at high frequencies. Skin effect dominates the resistive losses in primary windings that are made from thick wire.




Many coupled inductors are wound on iron cores, rather than on core materials that do not easily saturate. Such an inductor reaches saturation while the current in the primary winding is still increasing, and wastes energy that cannot be stored in the core's magnetic field.





FIG. 5

is taken from FIG. 5 of U.S. Pat. No. 5,430,405, a schematic diagram of a coupled-inductor charging circuit and driver. A typical problem with such circuits is that, as capacitor


114


approaches higher charge voltages, the cyclical action of circuit


500


speeds up to drive higher voltage into capacitor


114


, causing the current drained from battery


108


to increase beyond a limit where the battery may be damaged, and thus shortening battery life.




Thus, it would be desirable to have a flash system that saves battery energy, extends battery life, and enhances flash performance by controlling flash timing accurately, with little energy loss, and by including a charge circuit with an efficient coupled inductor that also limits overshoot voltages and battery-current spikes, and that has a switching rate controlled by a drive circuit that limits the amount of current drained from the battery and uses energy-efficient components.




A more detailed background of related flash and charge circuits is included in Appendix A.




SUMMARY OF THE INVENTION




In accordance with the present invention, energy efficiency of a photographic flash is improved by provision of several unique circuits that significantly increase the efficiency of the flash. Efficiency, measured by energy stored on the flash capacitor divided by energy drained from the battery, is conserved by precisely timed flash termination, a low-loss flyback converter, a high-efficiency coupled inductor, and a battery-saving charge circuit, including a new drive. When the several improvements are combined, total energy efficiency is improved from a nominal 30-percent efficiency to close to 90-percent efficiency.




In some embodiments, a majority-carrier switching-device circuit controls flash termination, starting and stopping the flow of current from the flash capacitor through the flash tube. This circuit eliminates the problems of timing uncertainty and transient energy dissipation, which are associated with previous designs, thereby making possible more precisely timed flashes, including multiple flashes. Thus, energy is not wasted by being dumped from the flash capacitor or in transient energy dissipation. The disclosed flash-control method may also be used in conjunction with a through-the-lens (TTL) exposure control that determines how much flash energy is needed for capture of a given image, and that commands the flash control to deliver only that much flash energy, thereby further saving energy.




Some embodiments use a high-efficiency coupled inductor to save energy during charging of the flash. This coupled inductor makes use of both an overlapping winding configuration and multiple primary winding strands. Multiple primary strands lower energy losses caused by skin effects. The winding configuration enables the primary and secondary windings to share the magnetic field of the core more efficiently, thus lowering primary leakage inductance, which is another source of energy loss. Lower primary leakage inductance also results in smaller voltage spikes during turn-off of the primary winding.




A charge circuit that uses the high-efficiency inductor does not require an active snubber to damp voltage spikes. Omitting the snubber circuitry saves energy. Several embodiments of such an energy-saving charge circuit are disclosed; each has simple and efficient damping circuits that control effectively the reduced overshoot voltages and that smooth battery current drain. Because overshoot voltages are controlled, the field-effect transistor (FET), which is used to drive the charge circuit, can also be small and energy efficient. The circuit extends battery life by smoothing out peaks in the battery-current drain.




Some embodiments of the present invention include a new drive circuit that keeps battery-current drain below a threshold value, thus further extending battery life. Some embodiments of the drive circuit save additional energy by using discrete transistor circuits rather than operational amplifiers.




By combining several novel circuits and devices, the various embodiments of the resent invention improve overall energy efficiency.











BRIEF DESCRIPTION OF THE DRAWINGS





FIG. 1

is a schematic diagram of a basic flash circuit;





FIG. 2

is a schematic diagram of a coupled-inductor (flyback converter) charge circuit;





FIG. 3

is a timing diagram of a coupled-inductor (flyback converter) charge circuit;





FIG. 4A

is a cross-sectional diagram of a winding of a coupled inductor;





FIG. 4B

is a cross-sectional diagram of a core of a coupled inductor;





FIG. 5

is FIG. 5 from U.S. Pat. No. 5,430,405, a schematic diagram of a prior-art photoflash charging circuit;





FIG. 6

is a graph comparing theoretical and measured discharge parameters;





FIG. 7

is a graph of predicted and measured flash-discharge voltage;





FIG. 8

is a graph of predicted and measured flash-discharge current;





FIG. 9

is a graph of predicted and measured flash-discharge power;





FIG. 10

is a graph of predicted and measured flash-discharge energy;





FIG. 11

is a schematic diagram of a flash-discharge circuit according to the present invention;





FIG. 12

is a timing diagram for flash termination;





FIG. 13

is a timing diagram for multiple flash generation;





FIG. 14A

is a cross-sectional diagram of a coupled inductor winding according to the present invention;





FIG. 14B

is a cross-sectional diagram of an embodiment of a coupled inductor winding according to the present invention;





FIG. 14C

is a schematic diagram of coupled-inductor winding connections according to the present invention;





FIG. 15A

is a schematic diagram of an embodiment of a flyback converter charge circuit according to the present invention;





FIG. 15B

is a schematic diagram of an embodiment of a flyback converter charge circuit according to the present invention, including a quick-start circuit;





FIG. 15C

is a schematic diagram of an embodiment of a flyback converter charge circuit according to the present invention, including a power smoothing filter;





FIG. 15D

is a schematic diagram of an embodiment of a flyback converter charge circuit according to the present invention, including both a quick-start circuit and a power smoothing filter;





FIG. 15E

is a schematic diagram of an embodiment of a quick start arrangement according to the present invention;





FIG. 16

is a schematic diagram of an embodiment of a flyback converter charge circuit according to the present invention;





FIG. 17

is a schematic diagram of a charge circuit according to the present invention;





FIG. 18

is a timing diagram of the charge circuit of

FIG. 17

;





FIG. 19

is a graph of battery current and switching frequency versus capacitor charge voltage;





FIG. 20

is a graph of measured voltage and current of a flash discharge circuit;





FIG. 21

is a graph comparing theoretical and measured discharge parameters;





FIG. 22

is FIG. 1 from U.S. Pat. No. 6,150,770, a schematic diagram of a flash apparatus capable of high-speed repeating flashes;





FIG. 23

is a schematic diagram of a single-inductor charge circuit;





FIG. 24

is a timing diagram of the charge circuit of

FIG. 23

;





FIG. 25

is FIG. 3 from U.S. Pat. No. 6,091,906, a schematic diagram of a complex prior-art flash;





FIG. 26

is FIG. 3 from U.S. Pat. No. 6,069,803, a schematic diagram of a prior-art flash charging circuit with a complex overshoot snubber;





FIG. 27

is a schematic diagram of a self-excited drive circuit;





FIG. 28

is a graph of flux as a function of drive in a self-excited drive circuit; and





FIG. 29

is a timing diagram of the self-excited drive circuit of FIG.


27


.











DETAILED DESCRIPTION




a. Dynamics of the Discharge




As a step to explaining how flash discharge timing and battery life can be controlled, the following discussion sets forth an accurate model of flash discharge. Discharge current and voltage are modeled according to Equation 1, where I is flash current, V is capacitor voltage, V


min


is the voltage at which the flash extinguishes, and k and n are parameters of the specific flash tube.








I=k


(


V−V




min


)


n


  [1]







FIG. 6

is a graph of theoretical and measured current-voltage curves for flash discharge. Data were measured for the case of an Amglo MFT118 flash tube. In this example, fitting measured data to Equation 1 determined that k was 0.101 A/V, V


min


was 45 V, and n was 1.325. Measured data are plotted as points


600


. Curve


630


represents a prediction based on Equation 1. This prediction shows a good fit to measured current-voltage points


600


. The good fit is at least partly due to accounting for voltage V


min


, at which the discharge extinguishes spontaneously.




In a basic flash circuit, current I is given by Equation 1, V


min


is a constant, and V


0


is the initial capacitor charge voltage. Because V


min


is a constant, d(V) is equal to d(V−V


min


). Equation 2, which defines the behavior of the capacitor, leads to a differential equation for the dynamic behavior of a flash discharge, given by Equation 3.









I
=


-
C









V



t







[
2
]








-
C










(

V
-

V
min


)




t



=


k


(

V
-

V
min


)


n





[
3
]













The solution for V is given in Equation 4:











V
-

V
min


=



(


C





α


kt
0


)

α








(

1
+

t

t
0



)


-
α











where





α

=



1

n
-
1







and












t
0


=


C





α



k


(


V
0

-

V
min


)



n
-
1









[
4
]














FIG. 7

is a graph of predicted and measured discharge voltage. The expression of Equation 4 is plotted as curve


720


, along with measured discharge data, as points


710


. There are no adjustable parameters in this plot and there is agreement between experiment and theory. As the capacitor voltage approaches V


min


, the discharge becomes marginal, and spontaneously extinguishes randomly. For that reason, the voltage remaining on capacitor


114


after discharge is typically higher than V


min


, and varies from flash to flash by an amount on the order of volts.




The slight drop in measured data points


710


below theoretical curve


720


just after ignition is due to internal resistance of capacitor


114


. In the case where a Cornell Dubilier 7P152V360A062L capacitor was used, the voltage drop at a peak current of


165


A was 5 V, indicating a resistance of 0.03Ω. Less than 1.5% of the energy in capacitor


114


was therefore dissipated in series resistance. The 7P152V360A062L is marketed as a special-purpose photoflash capacitor, based on its having high energy-storage density and low effective series resistance. A common electrolytic capacitor with the same value of capacitance would typically have a much higher effective series resistance, and thus would be unsuitable for use in photoflash applications.




Equation 5 is an expression for flash current as a function of time, obtained using the voltage from Equation 4 in the current-voltage relation given in Equation 1.









I
=



k


(


C





α


kt
0


)



n





α









(

1
+

t

t
0



)



-
n






α







[
5
]














FIG. 8

is a graph of predicted and measured discharge current. Current I, shown as curve


820


, was predicted by Equation 5. Measured data are shown as points


810


. There are no adjustable parameters in Equation 5, and there is agreement between measurements and prediction. The slight misfit at the first few of points


810


, early in the discharge when the current is highest, are due to the series resistance of capacitor


114


, which has been neglected in the model equations.




In conclusion, an improvement in modeling flash dynamics is accomplished by manipulation of Equation 1, which expresses the measured characteristics. This approach leads to accurate voltage and current expressions, which may be expressed in the form of power-law functions of (1+t/t


0


).




b. Energy in the Flash




Multiplying the expression for current in Equation 5 by the expression for voltage in Equation 4, gives the instantaneous power P delivered to the discharge at time t, as expressed by Equation 6.









P
=




k


(

C


k


(

n
-
1

)




t
0



)


β








(

1
+

t

t
0



)


-
β



+




kV
min



(

C


k


(

n
-
1

)




t
0



)


γ




(

1
+

t

t
0



)


-
γ








[
6
]













where






β
=




n
+
1


n
-
1







and











γ

=

n

n
-
1













Power P is the sum of two steep power-law functions of 1+t/t


0


. For the flash tube used in this example, n is 1.325, so β is 7.15 and I is 4.08 A. For short times, the second term in Equation 6 makes a negligible contribution to the magnitude of the power, but serves to flatten the curve. Most of the useful energy in the flash is emitted in the early part of the discharge; therefore, Equation 7 is a convenient approximation for P.









P




P
0



(

1
+

t

t
0



)



-
m






[
7
]













In the case of the Cornell Dubilier 7P152V360A062L capacitor, m is 6.15, or somewhat less than the exponents β of the first term in Equation 6. P


0


is the extrapolated initial peak power delivered to the discharge.





FIG. 9

is a graph of both predicted and measured power of a flash discharge. Power was calculated according to Equation 7 and is shown as curve


920


. Measured data are plotted as points


910


. The fit is imperfect, due to the approximation; however, Equation 7 provides a simple form that agrees with measured data over a factor of 50 in power.




The approximation for power given by Equation 7 is used to derive an expression for the total energy W delivered to the discharge as a function of time. Integration of Equation 7 gives Equation 8:









W





P
0



t
0



m
-
1




[

1
-


(

1
+

t

t
0



)


-

(

m
-
1

)




]






[
8
]














FIG. 10

is a graph of both predicted and measured total energy available for the flash. Equation 8 expresses total energy W delivered to the flash discharge, for a discharge current that is terminated at time t. Predicted data are shown as curve


1010


; measured data are shown as points


1020


.




c. Control of the Flash Energy




With no controls, flash discharge spontaneously extinguishes after the capacitor voltage has decreased to near V


min


. However, light output from a photoflash can be controlled either by switching different capacitor sizes, by setting the initial capacitor voltage, or by truncating the discharge time.




The energy stored in a capacitance C charged to a voltage V is given by C V


2


/2. The flash discharge can be controlled by setting capacitor voltage V prior to triggering the flash. This method is used in studio flash units, with which test photographs are typically the basis for adjustments in lighting and exposure. For photography under field conditions, test exposures may be difficult to obtain, so flash control based on measuring light during the actual exposure is preferable.




Real-time metering gives an estimate of the state of exposure of the image when the exposure is taken. Through-the-lens (TTL) metering can aid in use of flash systems under wide varieties of unpredictable conditions. TTL metering output is available during exposure, and the flash may be terminated when the TTL meter indicates that full exposure has been achieved. As an example TTL metering embodiment, co-pending application Ser. No. 09/515807, High Sensitivity Storage Pixel Sensor Having Auto-Exposure Detection, assigned to Foveon, Inc., incorporated by reference, discloses an auto-exposure circuit that produces a terminate-exposure signal from a solid-state image sensor.





FIG. 10

shows that over 75 percent of flash energy is released in about the first 3 ms of a flash. Therefore, the most precise control of discharge termination is needed over a specific few milliseconds. Such precise timing is especially desirable when a TTL or other real-time exposure control is used.




d. Flash Termination





FIG. 11

is a schematic diagram of an embodiment of a flash-control circuit according to the present invention. Circuit


1100


comprises MOS semiconductor switching device


1122


, and timing-control circuit


1126


. MOS power-switching transistors can switch high currents at high voltages with very short turn-on and turn-off times.




Some embodiments of the present invention make use of MOS power-switching transistor APT50M50JVR, supplied by Advanced Power Technology. The APT50M50JVR has a measured on resistance of 0.04Ω, a rated voltage of 500 V, a turn-on time of 20 ns, and a turn-off time of 12 ns. In some embodiments of the present invention, gate voltage


1124


, used to turn on fully device


1122


, may be less than 10 V, and may be generated by a commercial timing circuit.




Used in circuit


1100


with an 1800 μF capacitor charged to 350 V, the APT50M50JVR has a voltage drop of 6.5 V at the peak of the discharge, and therefore dissipates less than 2 percent of the power in the discharge. The performance of the APT50M50JVR, particularly with respect to turn-off time, is orders of magnitude better than that of most conductivity-modulated devices, because the APT50M50JVR does not exhibit minority-carrier storage effects.





FIG. 12

is a timing diagram for signals in circuit


1100


, where TTL control is used. Trace


1201


represents an exposure signal


1128


, where a low level allows a flash and a high level terminates it. Trace


1202


shows the voltage at gate


1124


. The gate voltage is held at zero until the flash is about to start, then is raised high (to about +9 V with respect to ground). Trace


1203


shows signal


119


, the input to ignite circuit


118


, which starts ionization in flash tube


110


, initiating the discharge. These signals are supplied by control circuit


1126


. The ionization state of the flash tube is shown by trace


1204


.




At time t


p


shown at


1206


, exposure signal


1128


, as shown by trace


1201


, is set high by the TTL sensing system or by any other means, such as by remote control, timing circuit, or exposure meter. Circuit


1100


may operate with a TTL system such as the image-plane sensing system of co-pending application Ser. No. 09/515807. Upon receiving exposure signal


1128


, control circuit


1126


drives to ground gate


1124


of MOS power-switching transistor


1122


, interrupting the discharge current shown as trace


1205


.




Although the current, shown by trace


1205


, drops abruptly to zero at t


p


, the ionization of the plasma in flash tube


110


, shown by trace


1204


, decays over a much longer time. In typical photographic flash tubes, full recombination can take tens of milliseconds. For that reason, in a system with timing such as that shown in

FIG. 12

, gate


1124


is not raised until the ionized gas is fully recombined. Gate


1124


may be raised to its on voltage just before ignite signal


119


is issued, as shown in FIG.


12


.




e. Multiple Flashes





FIG. 13

is a timing diagram of a flash unit that provides multiple flashes. In some embodiments of the present invention, the slow recombination of ions and electrons in tube


110


is used to facilitate generation of a plurality of precisely controlled flashes. The signals to gate


1124


and to ignite circuit


118


, shown by timing traces


1301


and


1302


, respectively, are provided by control circuit


1126


.




Pulse


1330


is issued to gate


1124


along with ignite pulse


1333


. During the initial pulse of


1330


, the first current pulse


1334


and flash-tube ionization trace


1304


are similar to the corresponding quantities that were shown in FIG.


12


. After initial flash pulse


1330


has terminated, the ionization, shown by trace


1304


, decays slowly. After time t


ab


, second pulse


1331


is issued by control circuit


1126


. Second pulse


1331


turns back on MOS power-switching transistor


1122


, and the current in the discharge, shown by trace


1303


, rises immediately, because the plasma is already ionized. There is no need to apply another ignite pulse for any flash pulse after the first one, as long as the spacing between the pulses is shorter than the plasma-recombination time.




After the termination of pulse


1331


, third current pulse


1332


is generated by issuance of another gate pulse. Multiple pulses can be used to generate multiple flashes. Each pulse may be a different width, as are pulses


1330


,


1331


, and


1332


, as shown in FIG.


13


. The width of each pulse can be controlled in duration to within nanoseconds (and therefore the energy of the pulse can be controlled precisely) because of the fast timing characteristics of MOS power-switching transistor


1122


. Compared to prior-art circuits, circuit


1100


may control flash durations more precisely, with less energy loss, and with fewer components.




f. Coupled Inductor




Some embodiments of the present invention improve charging efficiency of flyback-converter capacitor charging systems by use of an improved coupled inductor.




A magnetic core that may be used in some embodiments of the present invention is ferrite “pot” core model P-P26/16-3F3-A315 supplied by Ferroxcube (information concerning both the material and the core configuration is available on the web site www.ferroxcube.com). With this core, it is possible to operate a flyback charge circuit according to the present invention at frequencies exceeding 100 kHz, without core loss exceeding 1 percent of the power being converted.





FIGS. 14A and 14B

are cross-sectional views of windings


242


and


243


in an embodiment of a coupled inductor according to the present invention. Construction of windings


242


and


243


in alternating layers, as illustrated in

FIGS. 14A

, B, and C, reduces high-voltage spikes on the primary due to leakage inductance.




Secondary winding


243


is wound in three layers:


1443




a


,


1443




b


, and


1443




c


. Primary winding


242


is wound in two layers:


1442




a


and


1442




b


. These layers are alternated, and may be separated by insulating layers


1468


.




So that primary winding


242


has low resistance, it has a large cross-sectional conducting area. In order to minimize skin-effect losses, some embodiments of the present invention achieve a large cross-sectional area by using Litz wire, which is wire made with a large number of small conductors in parallel. Litz wire is available commercially and is used for high-frequency communication coils. When multiple conductors are used, resistance is lowered, but the area-to-volume ratio can be increased, thus decreasing skin effect.




The performance of primary winding


242


benefits from the use of Litz wire because of the large cross-sectional wire area required for low loss at high primary current. A slight further reduction in parasitic resistive loss is achieved if Litz wire also is used for secondary winding


243


.





FIG. 14C

is a schematic diagram of the fields and electrical connections of windings


242


and


243


. First primary-winding layer


1442




a


is interposed between layers


1443




a


and


1443




b


of secondary winding


243


, and second primary-winding layer


1442




b


is interposed between layers


1443




b


and


1443




c


of secondary


243


. The sense of the flux coupling among the layers is indicated by the dots in FIG.


14


C.




Secondary layers


1443




a


,


1443




b


, and


1443




c


are connected in series such that their induced voltages add. The input to layer


1443




a


and the output of layer


1443




c


form terminals


1474


and


1476


of composite secondary


243


. Primary-winding layers


1442




a


and


1442




b


, the two of which have the same number of turns, are connected in parallel such that their flux couplings are in the same direction. The corresponding common connections form terminals


1470


and


1472


of composite primary winding


242


. This configuration increases flux coupling between primary winding


242


and secondary winding


243


because of the interspersed and alternating nature of windings


242


and


243


. This embodiment also lowers high-frequency resistive loss because the conductors in the Litz wire of primary winding


242


are connected in parallel.




It is possible to have any number of primary windings alternating with and interspersed between a number s of secondary windings, as long as s−1≦p≦s+1. In the case p=s+1, primary winding


242


will include top and bottom layers. In the case p=s−1, secondary winding


243


will include top and bottom layers. In the case p=s, a primary-winding layer will lie on the bottom and a secondary-winding layer will lie on the top, or vice versa.





FIGS. 14A

, B, and C illustrate an embodiment where p=2 and s=3; however, as just explained, s and p may have other values in other embodiments.




In preferred embodiments of the present invention that have all primary-winding layers connected in parallel, the number of turns in each primary-winding layer is the same. Secondary winding


243


, as illustrated in

FIG. 14A

, may generally have differing numbers of turns in each layer. In the embodiment shown in

FIG. 14A

, inner secondary-winding layer


1443




a


has more windings than do subsequent layers. If more than one layer of wire is required for the number of turns chosen for a given winding layer, the combination is still counted as one winding layer, as shown in

FIG. 14A

, where inner winding layer


1443




a


is shown as two layers of wire.




Some embodiments, as shown in

FIG. 14A

, have multiple winding layers, disposed at successive radii, each at a larger radius than those wound earlier. In other embodiments, each winding layer may be constructed as a disk, and alternating disk-like layers may be stacked next to one another, as shown in FIG.


14


B. The embodiment shown in

FIG. 14B

may be more suitable in the case where core


250


has a radius larger than its width, whereas that shown in

FIG. 14A

may be more suitable in the case where the radius and width of core


250


are of the same order.




A coupled inductor, according to the present invention, was constructed on a Ferroxcube P-P26/16-3F3-A315 core. Inner secondary-winding layer


1443




a


was wound with 30 turns of #30 insulated magnet wire, followed by first primary-winding layer


1442




a


wound with 7 turns of 245/48 Litz wire, followed by second secondary-winding layer


1443




b


wound with 23 turns of #30 wire, followed by second primary-winding layer


1442




b


wound with 7 turns of 245/48 Litz wire, followed by third secondary-winding layer


1443




c


wound with 23 turns of #30 wire. The first numeral specifying Litz wire is the number of strands, and the second number is the wire gauge of each strand. The layers were separated by thin insulating tape


1468


, and were connected electrically as shown in FIG.


14


C. The turns ratio for this coupled inductor is N=(30+23+23)/7=11.




The characteristics of the example coupled inductor were measured. Inductance of primary winding


242


with secondary winding


243


open was 16 μH. Inductance of secondary winding


243


with primary


242


winding open was 1.8 mH. The ratio of inductance was almost the square of turns ratio N, as expected. The primary resistance at 1 kHz was 28 mΩ; that at 100 kHz was 71 mΩ. The primary leakage inductance (primary inductance with secondary


243


shorted) was 0.11 μH. The parasitic resistance at high frequency was nearly a factor of 2 lower, and the primary leakage inductance was a factor of 5 lower, than corresponding measurements of a coupled inductor built previously in accordance with

FIGS. 4A and 4B

.




In embodiments of the present invention, the number of primary turns may be chosen based on the battery voltage, core characteristics, operating frequency, and other considerations. Similarly, the number of secondary turns may accommodate maximum capacitor voltage, transistor maximum drain voltage, and other considerations. The details of a particular embodiment are a matter of design choices made by skilled people. The examples given above are for illustrative purposes only, and are not to be read as in any way limiting of the scope of the present invention, which is limited only by the Claims.




g. Charging Circuit





FIG. 15A

is a schematic diagram of an embodiment of a charging circuit according to the present invention. Circuit


1500


comprises the disclosed coupled inductor of

FIGS. 14A

, B, and C, as well as damping circuit


1584


, comprising damping capacitor


1580


and damping resistor


1582


in a series circuit with primary winding


242


. Because of the low leakage inductance of coupled inductor


241


, it is possible to reduce voltage spikes that occur when transistor


246


turns off, by using R-C damping circuit


1584


instead of an active snubber circuit.




In some embodiments of the present invention, damping circuit


1584


may be designed according to the following procedure. The energy stored in the primary leakage inductance L


leak


of coupled inductor


241


is calculated. The energy E


leak


stored in the leakage inductance at the end of time period t


1


, when the peak current is I


p


, is given by Equation 9:










E
leak

=



L
leak



I
p
2


2





[
9
]













The peak drain voltage V


dp


experienced by transistor


246


is the voltage induced in primary winding


242


when secondary winding


243


is clamped by diode


248


to a maximum value V


max


of capacitor voltage, plus peak voltage V


p


across the leakage inductance as it resonates with damping capacitor


1580


, plus battery voltage V


bat


. V


dp


is given by Equation 10:










V
dp

=



V
max

N

+

V
p

+

V
bat






[
10
]













A maximum threshold value of V


dp


is made equal to the manufacturer's specification on the maximum drain voltage of transistor


246


. Given turns ratio N of coupled inductor


241


, and the maximum photoflash capacitor voltage V


max


, Equation 11 gives a design value for V


p


.










V
p

=


V
dp

-






V
max

N

-

V
bat






[
11
]













The value C


d


of damping capacitor


1580


is chosen such that it just absorbs all the energy in the leakage inductance when C


d


is charged to V


p


, as given by Equation 12:










E
leak

=




L
leak



I
p
2


2

=



C
d

2



(



(


V
p

+


V
max

N


)

2

-


(


V
max

N

)

2


)







[
12
]













Equation 12 leads to a value for C


d


as given by Equation 13:










C
d

=



I
p
2



L
leak





(


V
p

+


V
max

N


)

2

-


(


V
max

N

)

2







[
13
]













The value R


d


is then chosen by the critical damping condition expressed in Equation 14:










R
d

=




L
leak


C
d



=


1

I
p







(


V
p

+


V
max

N


)

2

-


(


V
max

N

)

2









[
14
]













where the second form follows from Equation 13.




Manufacturing tolerances may make it desirable to use a somewhat larger value of C


d


to ensure that V


p


does not exceed its rated value. The value of R


d


may be chosen to be greater or less than that given by Equation 14.




Components and values used to construct an experimental embodiment of Circuit


1500


are given in Table 1. Circuit


1500


used coupled inductor


241


constructed as shown in

FIGS. 14A and 14C

, and described in the previous section. Battery


108


was a four-cell lithium-ion battery with a nominal voltage of 16 V. The actual voltage of battery


108


(depending on the state of charge) ranged from 18 V to 12 V. The battery current threshold was chosen as 2 A. Photoflash capacitor


114


had a value of 1800 μF, and was charged to a maximum voltage of V


max


=350 V. The total energy stored in photoflash capacitor


114


under full charge was approximately 110 J. Transistor


246


was International Rectifier model IRLL2705, having a rated maximum drain voltage of 55 V, and a maximum on-resistance of 0.04Ω. Rectifier


248


was Motorola model MUR1100E.














TABLE 1













Coupled inductor: per

FIGS. 14 through 20








Battery: 16 V, max 2 A current







Flash capacitor: 1800 μF, max 350 V













(Cornell Dubilier 7P152V360A062L)













MOS switching transistor: I.R. IRLL2705







Rectifier: Mot. MUR1100E







C


d


: 0.010 μF







R


d


: 2.7 Ω















When the voltage of battery


108


was 15 V under load, time t


1


was 9 μs, and the measured current was 8 A. Therefore, using V=LdI/dt, the effective primary inductance was 16.8 μH.




The inductance under operating conditions is often slightly higher than that measured by a bridge at zero current, due to the shape of the B-H curve around zero flux. This measurement of 16.8 μH is very close to the 16 μH measured previously, and indicates that core


250


was not near saturation at a current of 8 A. The current at which inductor


241


began to saturate was about 12 A. Using Equation 12, with current 8 A, the energy stored in inductor


241


at the end of t


1


, 9 μs, was therefore 0.54 mJ.




It requires 203,000 cycles of charge circuit


1500


to charge photoflash capacitor


114


from zero to full voltage, assuming that charge circuit


1500


is 100-percent efficient.




Values for damping circuit


1584


were calculated. Turns ratio N is 11; therefore, the maximum clamp voltage of secondary winding


243


, 350 V, referred to primary winding


242


, was approximately 32 V. Plugging in 55 V for V


dp


, 15 V for V


bat


, and 32 V for V


max


/N into Equation 11 gave a maximum allowable value of 8.2 V for V


p


, to keep V


dp


below 55 V.




Using Equation 13, the design value for C


d


was 0.015 μF. Plugging into Equation 14, a design value for R


d


was 2.7Ω.




In the experiment, the measured maximum drain voltage of transistor


246


did not exceed 45 V, because the rise time of secondary winding


243


was longer than the period of C


d


resonating with the leakage inductance. The design procedure is conservative, justifying the use of the maximum rated drain voltage for V


dp


in Equation 11.




The leakage inductance has an energy to be dissipated, as given by Equation 9, of 0.11 μH(8 A)


2


/2=3.52 μJ. The E


leak


value of 3.52 μJ is less than 1 percent of the 0.54 mJ stored in inductor


241


.




Calculation of E


c


, the energy stored (and lost) on C


d


in damping circuit


1584


during each cycle, is given by Equation 15:










E
c

=



1
2




C
d



(



(


V
p

+


V
max

N


)

2

+


(

V
bat

)

2


)



=

13.7





µJ






[
15
]













The energy lost through damping capacitor


1580


also includes the energy lost through inductor leakage, so the total energy loss per cycle is 13.7 μJ, or 2.5 percent of the stored 0.54 mJ.




Charge circuit


1500


was tested with a static load. Its measured input current was 1.87 A at a battery voltage of 15 V, giving a power consumption of 28 W. Under these conditions, circuit


1500


generated a continuous voltage of 277 V across a 3070Ω load resistor, thus supplying an output power of 25 W. The efficiency of overall energy conversion was therefore 89 percent. The measured efficiency of energy conversion with capacitive load was between 87 percent and 89 percent.




The particular example embodiments described above are for illustrative purposes only, and are not intended to be limiting on the scope of the present invention. Several variants of the present invention are possible and desirable under certain circumstances.





FIG. 15B

is a schematic diagram that illustrates embodiments of the present invention where it is desirable to connect the reference terminal of secondary winding


243


to the battery voltage, rather than to ground. This connection gives the voltage on photoflash capacitor


114


a quick start when circuit


1500


is first turned on, shortening the time required to charge capacitor


114


to its minimum flash voltage.





FIGS. 15C and 15D

are schematic diagrams showing the addition of filter circuit


1587


to save battery life. Battery


108


may have longer life if the current drawn from it is steady rather than pulsed. The circuits of

FIGS. 15A and 15B

subject battery


108


to the full peak current drain of inductor


241


at the end of time period t


1


. However, the current may be smoothed greatly by the introduction of L-C filter


1587


, comprising filter inductor


1586


and filter capacitor


1588


, as shown in

FIGS. 15C and 15D

. In some embodiments, filter inductor


1586


is chosen to have a high impedance at the operating frequency of circuit


1500


, while smoothing capacitor


1588


is chosen to supply the energy for one charging cycle without significant voltage drop.





FIG. 15D

is a schematic diagram of an embodiment that combines resonant filter


1587


with the quick-start connection of secondary winding


243


to V


bat


, shown in FIG.


15


B.




L-C filter circuit


1587


operates as follows. As an example, a 200 μF filter capacitor charged to 15 V stores 22 mJ. The 0.54 mJ required to charge coupled inductor


241


to the latter's peak energy storage depletes the voltage on capacitor


1588


by less than 0.37 V. That voltage depletion does not represent an energy loss, because L-C filter


1587


is lossless except for the resistance of the components. A result of adding filter


1587


to charging circuit


1500


is a slight modification of the waveforms previously shown in FIG.


3


. The voltage at primary winding


242


of coupled inductor


241


starts a given cycle slightly higher than the battery voltage, and ends the cycle slightly lower than the battery voltage. The resonant period of resonant circuit


1587


, formed by filter inductor


1586


and filter capacitor


1588


, is.typically made longer than the on-time t


1


of the converter, and, in some embodiments, also is made longer than the total period t


1


+t


2


of the converter


1500


.




While the quick-start arrangement shown in

FIGS. 15B and 15D

does get an extra 15 V start on capacitor


114


, on power up, the current through secondary


243


sets up a large current in primary winding


242


which can blow out the reverse source-drain diode in FET


246


. In some cases this current is about 30 A.





FIG. 15E

is a schematic diagram of circuit


1500


with an improved quick start arrangement. Diode


1590


is connected from the positive side of battery


108


to flash capacitor


114


with resistor


1592


in series. This configuration charges capacitor


114


to 15 V without a large current being induced in the primary winding


242


.




This configuration also has another advantage. The charge-up pulse time for capacitor


114


is inversely proportional to the voltage across secondary winding


243


, V


secondary


. In the circuits shown in

FIGS. 15A-D

, V


secondary


is near zero on the first few cycles of charge-up. Therefore, t


pulse


is very long at start up. In contrast, in the circuit of

FIG. 15E

, V


secondary


starts at 15 V, so the maximum t


pulse


is proportional to 1/15 V. When capacitor


114


is charged to near its maximum, 350 V, t


pulse


is proportional to 1/350 V. Therefore the longest t


pulse


(at startup) is only 23 times the shortest t


pulse


(at near full charge). The added cost of diode


1590


and resistor


1592


is minimal.




h. Inductive FET Turn-Off Control





FIG. 16

is a schematic diagram of an inductive overshoot voltage-damping circuit according to the present invention. In some embodiments, circuit


1601


, employing inductor


1602


, rather than circuits employing R-C circuit


1584


, is used to decrease overshoot voltage. Circuit


1601


controls turn-off current, and thereby controls overshoot voltage. Primary winding


242


has parasitic inductance L


drain


. Inductor


1602


has inductance L


src


, and transistor


246


is a FET with a low source impedance. Inductance L


src


in series with the source of FET


246


affects the turn-off current.




Gate


245


of FET


246


is driven directly with a low impedance source, instead of with resistance in series with gate


245


as has been done with some prior-art circuits. As the voltage at gate


245


goes to zero, inductor


1602


causes source voltage V


src


to go negative very quickly, keeping FET


246


on initially with V


gs


just enough to support the level of current already flowing. The voltage across the source inductance, which equals V


gs


, will remain nearly constant throughout the main part of the turnoff process. This is because the current is a very steep function of V


gs


. V


gs


is given by Equation 16:










V
gs

=


L
src









I



t







[
16
]













Since the drain and source currents are the same, the overshoot voltage is given by Equation 17:










V
overshoot

=


L
drain









I



t







[
17
]













V


overshoot


may be controlled directly by the ratio of the drain inductance to the source inductance, according to Equation 18:










V
overshoot

=


V
gs




L
drain


L
src







[
18
]













The value of dV/dt depends on only the stray capacitance in the circuit, and can be high, making for low power dissipation in transistor


246


during turn-off.




When circuit


1601


is used, turn-on and turn-off times are very fast and about equal, because dI/dt=V


gs


/L


src


. Overshoot voltage is controlled directly, allowing quick turn-off with low energy dissipation. This technique may be easier to apply as voltages and currents increase, since the ratio of drain voltage to gate voltage tends to grow larger with higher-power devices. In some embodiments, the inductance of a short trace of printed-circuit-board (PCB) wiring may be used for inductor


1602


. In some embodiments, the chosen value for inductor


1602


may depend on inductance in FET


246


, as well as on many other sources of inductance, such as PCB traces, wires, and other components.




Peak drain voltage V


dp


is given by Equation 19:










V
dp

=



V
max

N

+

V
overshoot

+

V
bat

+

V
gs






[
19
]













where V


gs


is the gate-to-source voltage, V


bat


is the battery voltage, V


max


/N is the voltage across the inductor, and V


overshoot


is the voltage due to leakage inductance. Reordering terms yields Equation 20:










V
overshoot

=


V
dp

-






V
max

N

-

V
bat

-

V
gs






[
20
]













The maximum allowable voltage due to leakage inductance, V


overshoot


, is calculated by plugging into Equation 20 the maximum allowable value for V


dp


, and values for V


max


/N, V


bat


, and V


gs


from the above discussion of charge circuit


1500


and solving, as illustrated by Equation 21:








V




overshoot


=55


V


−32


V


−15


V


−3.2


V


=5


V


  [21]






Given that the same current flows through the drain and source, dI/dt is the same for source and drain currents. V


gs


will remain approximately constant for most of the way to full turn-off. V


gs


is given by Equation 22 and V


overshoot


is given by Equation 23:










V
gs

=


L
s





I



t







[
22
]







V
overshoot

=


L
leak









I



t







[
23
]













Combining Equations 22 and 23 gives Equation 24, the expression for L


s


in terms of the leakage inductance and the ratio of turn-on voltage to allowable inductive overshoot voltage:










L
s

=


L
leak








V
gs


V
overshoot







[
24
]













Plugging in 5 V for V


overshoot


from the above example and using the value of 3.2 V for V


gs


(as specified for the IRLL7205), L


s


is 64% of the leakage inductance of 0.11 μH, or about 0.07 μH.




The energy loss occurs during turn-off, when the voltage across FET


246


is V


dp


, and the current starts at I


p


and falls to zero. The energy loss is calculated by Equation 25:










E
lost

=




I
=

I
p


0




V
dp


I







t







[
25
]













Substituting V


p1


/L


leak


for dI/dt, and solving Equation 25, shows E


lost


=38.7 μJ, or 7.2 percent of the 0.54 mJ stored in the inductor, according to Equation 26:










E
lost

=



V
dp

×


L
leak


V
overshoot


×


I
p
2

2


=


55





V
×


11





µH


5





V


×



(

8





A

)

2

2


=

38.7





µJ







[
26
]













Inductive damping circuit


1601


is less energy efficient than is the R-C circuit of

FIGS. 15

A-E. However, as the allowable peak voltage increases, the relative efficiency of circuit


1601


increases. For example, if a 70 V transistor is used instead of a 55 V transistor, the inductive overshoot voltage can be 20 V instead of the 5 V in the example above, so the required inductor, the total turn-off time, and the energy lost is smaller by a factor of 4.




i. Calculations for RC and Inductive Damping with Slower Rising Secondary.




Peak voltage was calculated for the above example by making the conservative approximation that the secondary reflection peaked at the same time as did the voltage due to the leakage inductance. However, voltage due to secondary reflection lags. Using the same components and a C


d


of 0.01 μF, peak voltage was measured at 45 V. Defining f as the fraction of the maximum that secondary reflection reaches at the inductive peak, the values of E


leak


and f are given by Equations 27 and 27.1:










E
leak

=




C
d

2



(



(

45
-

V
bat


)

2

-


(


fV
max

N

)

2


)


=

3.52





µJ






[
27
]






f
=




(



(

45
-

V
bat


)

2

-

2







E
leak


C
d




)


1
2








N

V
max



=
0.44





[
27.1
]













Modification of equation 11 leads to equation 28 for the RC damping technique:










V
p

=



V
dp

-

(

f







V
max

N


)

-

V
bat


=

16





V






[
28
]













Modification of equation 20 leads to equation 28.1 for the inductive damping technique:










V
p

=


V
dp

-

(

f







V
max

N


)

-

V
bat

-

V
gs






[
28.1
]













Repeating the efficiency calculation with these values of V


p


, which represent a bigger allowable voltage peak, shows an energy loss in R-C circuit


1584


of 1% and an energy loss in inductive circuit


1601


of 2%. Although it has lower energy efficiency, an inductive damping circuit may be preferred because it can be constructed from only a circuit trace. An inductive damping circuit may be more advantageous than an R-C circuit when there is a large margin on allowable peak voltage.




j. Driving Circuit




Some embodiments of the present invention make use of commercial separate excitation driving circuits, other drivers, or the following illustrative circuits.





FIG. 17

is a schematic diagram of an embodiment of photoflash charging and driving circuits, according to the present invention. The driving portion of circuit


1700


uses transistor circuits that operate on low voltages, and are thus inexpensive and compatible with battery-powered operation. Circuit


1700


derives all necessary voltages from battery


108


, and uses only a single reference voltage semiconductor. While charge voltage is low, circuit


1700


drives at an efficient rate, proportional to battery voltage and capacitor voltage; at higher charge voltages, it rolls off the charging rate, to avoid drawing too much current from battery


108


.




Starting diode


17142


in series with starting resistor


17144


starts capacitor


114


at voltage V


bat


, as the circuit is starting up, shortening the initial charge time at turn-on.




Circuit


1700


switches on and off the current in primary winding


242


by action of switching transistor


246


controlled by flip-flop


17102


, whose output is shown by trace


1801


of FIG.


18


. Flip-flop


17102


serves as a bistable controller providing an off state and an on state to control and to model the ramping up and ramping down of magnetic flux in the couple inductor.




Reference voltage V


ref


is regulated by bandgap reference element


17120


. Resistors


17158


and


17160


form a voltage divider that creates second reference voltage V


1


. If the voltage V


c


on model capacitor


1792


, shown by trace


1804


, is above V


ref


, flip-flop


17102


is set by comparator


1798


, and voltage V


c


on model capacitor


1792


is driven toward ground through a current source proportional to battery voltage, comprising transistor


1791


and transistor


1793




a


. When V


c


reaches V


1


, flip-flop


17102


is reset by comparator


1794


, and the voltage V


c


on model capacitor


1792


is driven toward V


bat


by a current source comprising transistors


17141


and transistor


17151


. The rate at which V


c


ramps up and down, and therefore the rate at which circuit


1700


switches, is regulated as follows.




When output


17106


of flip-flop


17102


is high, model capacitor


1792


is driven toward ground by the current source transistor


1791


, and MOS power-switching transistor


246


is also turned on. The magnitude of the current driving model capacitor


1792


toward ground is set by resistor


17154


, which acts through a current mirror comprising transistors


1790


and


1791


. Because resistor


17154


draws its current from battery


108


, the magnitude of the current through transistor


1791


is approximately proportional to V


bat


. Therefore, the time for the voltage V


c


(trace


1804


) on model capacitor


1792


to ramp down from V


ref


to V


1


varies inversely with V


bat


, as desired to produce a fixed peak amount of magnetic flux (trace


1803


) in coupled inductor


241


.




Transistor


1793




a


and differential switch


1793




b


(formed from transistors


17151


and


17153


) control whether the model capacitor


1792


is charging or discharging, based on the state of the flip-flop


17102


.




The current source through transistor


17141


of current mirror


17140


, which charges model capacitor


1792


, is controlled by V


o


and V


bat


by action of current mirror


17138


and resistors


17130


(R


1


),


27132


(R


2


), and


17134


(R


3


).




When output


17106


of flip-flop


17102


is low, switching transistor


246


is off; the current through primary winding


242


, shown by trace


1802


, is disabled; and the current in secondary winding


243


, as shown by trace


1805


, flows through diode


248


to flash capacitor


114


. In this condition, the voltage across secondary winding


243


is equal to the output voltage V


o


, shown by trace


1806


. The output voltage V


o


is therefore proportional to the rate at which the magnetic flux in the inductor will decrease during the off state.




When the output voltage V


o


is less than V


b


, the off period is inversely proportional to V


o


for fast charging; this variable off time period is thereby regulated to be just sufficient for the magnetic flux (trace


1803


) in the inductor to return to zero. However, to regulate the amount of current drawn from battery


108


, circuit


1700


rolls off the charging-cycle frequency rate by increasing its off time as V


o


gets above voltage level V


b


, defined by Equation 29, where R


1


and R


2


are the values of resistors


17130


and


17132


, respectively.










V
b

=


V
bat









R
1

+

R
2



R
2







[
29
]













To roll off the charging frequency, and therefore the current drawn from battery


108


, diode


17136


becomes forward biased, and the current into node


17152


rises more slowly than it does for V


o


below V


b


, at a rate controlled by resistor


17134


. This current is mirrored first by n-type current mirror


17138


, and next by p-type current mirror


17140


, and thus appears as a positive current into node


17152


. This current is enabled to flow onto model capacitor


1592


when output


17106


of flip-flop


17102


is low, by the action of differential switch


1793




b


, formed by p-type transistors


17151


and


17153


. When output


17106


of flip-flop


17102


is high, differential switch


1793




b


directs the current out of node


17152


to ground. Net current into model capacitor


1592


, i


model


, is shown by trace


1807


.





FIG. 19

is a graph of battery current


19172


and operating frequency


19170


versus capacitor charge for circuit


1700


, and of battery current


19174


for a circuit without frequency limiting. With the frequency limiting as described above for circuit


1700


, both frequency and current rise slowly or become nearly constant with increasing V


o


when V


o


is greater than V


b


, so that battery


108


is not damaged by too much current being drawn from it.




A typical frequency of operation for drive circuit


500


(from U.S. Pat. No. 5,430,405) without battery-current control is shown by trace


19174


. Current drawn from battery


108


by an example charge circuit with no current control is given by Equation 30. For a given battery voltage, the average battery current I


av


continues to rise as V


o


rises, and soon exceeds the maximum safe battery current (level


19175


), as shown in trace


19174


.











I
av

=




I
p

2








t
on



t
on

+

t
off








I
p

2








V
o



V
o

+

NV
bat














[
30
]













For maximum battery life, in some embodiments of the present invention, battery current is limited to a maximum value that decreases as the battery voltage decreases. If the value R


3


of resistor


17134


is set to zero, frequency of operation is constant for V


o


>V


b


. In practice, however, for a fixed frequency of operation, the battery current actually decreases with output voltage V


o


. For that reason, R


3


may be chosen such that it just compensates for this second-order effect and increases the idealized operating frequency slowly for V


o


>V


b


, as shown by trace


19170


. With the proper choices of R


1


, R


2


, and R


3


, battery current may be held constant at its maximum rated value as output voltage V


o


increases, as shown by trace


19172


.




If V


o


becomes larger than V


max


, regulation of the output voltage to the desired final value V


max


is accomplished by resistive voltage divider


17150


, formed of resistor


17146


and resistor


17148


. V


max


is given by Equation 31, where R


4


and R


5


are the values of resistors


17146


and


17148


, respectively.










V
max

=


V
ref









R
4

+

R
5



R
5







[
31
]













Values for resistors


17146


and


17148


may be chosen such that, as V


o


approaches V


max


transconductance amplifier


17122


begins to shunt current to ground from node


17152


. Transconductance amplifier


17122


is arranged such that it can only drain current from node


17152


, and cannot source current. This draining of current lowers the amount of current charging model capacitor


1792


; therefore, V


c


rises more slowly than it would for lower values of V


o


. This slow rise lengthens the off period, decreasing the frequency of operation. In steady state at full charge, V


o


is equal to V


max


, and charging pulses are generated at a very slow rate: just often enough to make up for charge leaking off of photoflash capacitor


114


due to resistors


17146


,


17130


, and to the capacitor's own natural leakage.




Circuit


1700


of

FIG. 17

includes a driving circuit that takes the battery voltage and the flash capacitor voltage as inputs, and produces a control signal to the gate of transistor


246


as output. The driving circuit can be separated out and made into an integrated circuit if the resistors


17130


and


17146


(R


1


and R


4


) that connect to the relatively high voltage of the flash capacitor


114


are external to the integrated circuit. Resistors R


1


and R


4


(


17130


and


17146


) can be considered to be voltage-dropping resistors that provide currents proportional to the charge level of the photoflash capacitor. The driver circuit can easily be modified to use a single voltage-dropping resistor, rather than the two as shown, to accomplish the same functional control of the switching rate as described above. More generally, the driver uses a charge-level input, however the charge level may be represented, on which to base the control of switching rate. Resistor


17154


connected to battery


108


may also be external to a controller integrated circuit. The values of the external resistor are useful as programming values to make the model in the driver circuit match the particular coupled inductor converter system being controlled.




The embodiment shown in

FIG. 17

is only exemplary and many variants on the design are possible. For example, MOS transistors used in the example circuit could be replaced by bipolar transistors, in which case the term “gate” would denote the base of the bipolar transistor, the term “drain” would denote the collector of the bipolar transistor, and the term “source” would denote the emitter of the bipolar transistor. The unidirectional transconductance amplifier can be implemented in numerous ways other than that shown. It may be desirable to interpose a driver circuit between output


17106


of flip-flop


17120


and gate


245


of MOS power-switching transistor


246


. The polarities of charging and discharging can be interchanged, as can the polarities of the individual elements, provided that the relations among them are preserved. In the case where a negative voltage—rather than a positive voltage—is chosen, the term “larger” as used herein refers to the magnitude of that voltage. In the charge circuits of

FIGS. 15

(A-E),


16


, and


17


, the reference node for secondary circuit


243


can be separate from that of primary circuit


242


. The illustrations, examples, and description are thus not intended to limit the scope of the invention, set forth by the following claims.




APPENDIX A: DETAILED BACKGROUND




Xenon flash tubes are used for photographic lighting where insufficient natural light is available. The literature describes circuits for supplying power to these devices, and for controlling the light that they emit. However, despite the commercial resources that have been devoted to these devices, commercial flash units are relatively inefficient; typically less than 30% of the energy taken from the battery is actually delivered to the flash tube.




a. Basic Flash Circuit





FIG. 1

is a schematic diagram of basic flash circuit


100


. Flash tube


110


is connected in parallel with storage capacitor


114


, which is charged to voltage V by charge circuit


116


. In its un-ionized state, the gas in flash tube


110


acts as an insulator. To generate a flash, trigger signal


119


causes ignite circuit


118


to generate a pulse of high-frequency energy, applied at excitation terminal


112


. The high-frequency energy pulse couples through the envelope of flash tube


110


to the pressurized gas inside, slightly ionizing the gas and making the gas more conductive.




An electric field is present in flash tube


110


due to voltage V, at node


130


, across contacts


111


and


113


. On triggering, a few initial electrons in the gas are accelerated by the electric field, and gain energy sufficient that they ionize other gas atoms, liberating more electrons in an exponential cascade (avalanche discharge) in tube


110


. In typical photographic flash tubes, it takes about 100 μs for the gas to become fully ionized, after which current


140


flows through tube


110


. Current flow is determined by the conductance characteristics of the ionized gas.




b. Characteristics of the Discharge





FIG. 20

is a graph of measured discharge voltage, shown as curve


2010


, and measured current, shown as curve


2020


, of an Amglo MFT118 helical photographic flash tube. Further information on Amglo and other Xenon flash tubes is available at the Amglo Kemlite web site: http://www.amglo.com. In experimental measurements, capacitor


114


had a value of 1800 microfarad (μF), and was charged to initial measured voltage 2011, 337 V. On discharge, current


140


reached a maximum value of 165 A after 2050 μs. Current flow reduced the charge on capacitor


114


to 48 V after 25 ms, after which the discharge extinguished spontaneously.





FIG. 21

is a graph of a measured current-voltage relation from the experiment. Points


600


are derived from the data shown in FIG.


20


. Three data points on the lower-right side of the graph—points


611


,


612


, and


613


—are from the initial portion of the discharge, before the gas was fully ionized.




Equation 32 is a commonly used model of flash discharge in a fully ionized flash tube:








V=K{square root over (I)}


  [32]






A fit of Equation 32 to measured data (K=22) is shown by curve


2120


in FIG.


21


. Curve


2120


for predicted data matches the measured current-voltage points


600


in the middle third of its range, but not in the upper and lower parts. An improved model of the current-voltage relationship has been given in Equation 1 and

FIG. 6

of the present specification.




c. Termination of the Flash




Typical commercial flashes, including those used with TTL sensing, terminate the discharge while the capacitor voltage is still above V


min


, which is the minimum voltage required to drive a discharge. Some flashes use inductors, coupled with an auxiliary flash tube, to rob current from tube


110


until the flash extinguishes.





FIG. 22

is FIG. 1 from U.S. Pat. No. 6,150,770. In circuit


2200


, minority-carrier semiconductor switching device


2206


is placed in series with main flash tube


110


to control the flash. The flash is triggered while semiconductor switching device


2206


is in a low-impedance state. To terminate the discharge, control electrode


2230


transitions semiconductor switching device


2206


into a high-impedance state, stopping the flow of current. The remaining components of

FIG. 22

are discussed in U.S. Pat. No. 6,150,770.




Flash devices that use thyristors as semiconductor switching device


2206


are described in U.S. Pat. No. 5,027,039, U.S. Pat. No. 4,717,861, U.S. Pat. No. 4,155,031, U.S. Pat. No. 4,132,923, U.S. Pat. No. 4,091,308. U.S. Pat. No. 4,012,665, 4,007,398, and U.S. Pat. No. 3,947,720. Insulated-gate bipolar transistors (IGBT) have been used as semiconductor switching devices in U.S. Pat. No. 6,150,770, U.S. Pat. No. 5,869,936, U.S. Pat. No. 5,717,962, U.S. Pat. No. 5,640,620, U.S. Pat. No. 5,532,555, and U.S. Pat. No. 5,130,738.




Because flash discharge requires high current, it is desirable that semiconductor switching device


2206


have a very low on resistance. In its off state, device


2206


holds off the maximum voltage of capacitor


114


without breaking down. So that a high breakdown voltage can be achieved, at least one region of semiconductor switching device


2206


is fabricated from high-resistivity material. However, this high-resistivity material is typically incompatible with a low on resistance. In some semiconductor devices, low on resistance is achieved by injection of minority carriers into the high-resistivity region, where they are stored while the device is in its on state.




When the flash is initiated, the initial on resistance of semiconductor switching device


2206


is high. As current builds up, that current is carried by minority carriers. Densities of both minority and majority carriers in the high-resistance region increase in proportion to the current. At the peak current of the flash discharge, the density of minority carriers is a maximum. The number of minority carriers stored is much larger than the number of majority dopant atoms; this relation enhances conductivity. The resistivity of the region is much lower in the on state than would be possible if the region was required to conduct the on current with only its native majority carriers. This conductivity enhancement is called “conductivity modulation.” Although the problem of achieving a low on resistance may be addressed by conductivity modulation, two new problems are created: timing uncertainty and power dissipation during the turn-off transient.




The large excess of stored minority carriers must be removed from the conductivity-modulated region for semiconductor switching device


2206


to turn off. In both thyristors and IGBTs, at least one conductivity-modulated region lacks direct contact to a device terminal, so minority-carrier removal from this region is accomplished by recombination with majority carriers. The time required for recombination to remove the excess minority carriers is called the “minority-carrier storage time.” This minority-carrier storage time may be many tens of microseconds, and is longest and more uncertain when the current is highest. So as to ensure that the semiconductor switching device is off, the control terminal may be held in its off state well beyond the worst-case minority-carrier storage time.




In many of the above-referenced patents, auxiliary devices-such as inductors, capacitors, diodes, and even additional semiconductor devices-are required for proper turn-off. Circuit


2200


of

FIG. 22

is an example of such a design.




Parasitic transient power dissipation is another limitation in devices using minority-carrier storage to achieve low on resistance. At the end of the minority-carrier storage time, just before semiconductor switching device


2206


turns off, the resistance of the conductivity-modulated region is high while a large current is still flowing. Power is dissipated through this high resistance. Parasitic transient power dissipation is particularly severe when the flash is terminated shortly after it is initiated, at which time the total emitted flash energy is still small.




In some cameras, several low-energy flashes are emitted to reduce red-eye and to estimate lighting conditions prior to the image being recorded. Some designs use a series of short flashes for the main exposure. However, because the required off time of the flash includes waiting during minority-carrier storage time, the rate at which short flashes can be initiated is limited.




Compensating for parasitic transient power dissipation and timing uncertainty can require elaborate complications in the flash circuit. For example, in U.S. Pat. No. 4,285,588 and in U.S. Pat. No. 4,071,808, a plurality of flash capacitors and a plurality of thyristors are used. The problem is sufficiently severe that some implementations-for example, U.S. Pat. No. 5,869,936—employ one or more auxiliary capacitors, each with attendant semiconductor devices, to recover a portion of the energy. The result is a complex and costly circuit that is only partially effective.




d. Charge Circuit




After photoflash capacitor


114


(shown

FIG. 1

) has discharged, charge circuit


116


replaces the charge on photoflash capacitor


114


. In a typical portable camera, the primary source of energy is battery


108


. Typical flash batteries have a voltage of from about 3 V for small cameras up to about 20 V for professional flash attachments. Charge circuit


116


boosts the battery voltage to a capacitor charge voltage on the order of 350 V.




After a flash, voltage on capacitor


114


is reduced to V


min


, which is about 50 V. Charge circuit


116


then incrementally delivers charge to capacitor


114


from V


min


to its final voltage of about 350 V. Charge circuit


116


therefore typically operates over a 7-to-1 (350 V to 50 V) range of output voltage. Efficiency of a continuous-conduction transformer-based switching power supply is limited to the ratio of minimum to maximum output voltage. At the 7:1 ratio, efficiency would be 14%.




The reason for this efficiency limitation is that a continuous-conduction circuit acting as a voltage source delivers charge at the highest output voltage. When capacitor voltage is below maximum, charge circuit


116


dissipates an amount of energy given by the voltage difference multiplied by the charge delivered. To increase efficiency, some charge circuits use a plurality of power supplies with a plurality of output voltages; examples of such approaches are shown in U.S. Pat. No. 4,179,728, U.S. Pat. No. 4,075,536, and U.S. Pat. No. 3,821,635. Such circuits are complex and are only partially effective.





FIG. 23

is a schematic diagram of an example boost converter: a discontinuous-conduction switching power converter.

FIG. 24

is a timing diagram illustrating the operation of boost-converter circuit


2300


. Drive voltage at gate


245


is shown as trace


2401


, flux in inductor


2302


is shown as trace


2402


, and the voltage at node


2347


is shown as trace


2403


.




Drive circuit


244


applies a drive pulse to gate


245


of MOS power switching transistor


246


for time period t


1


, as shown in FIG.


24


. The gate voltage applied during this period is higher than the on gate voltage of MOS power switching transistor


246


, which therefore connects battery


108


across inductor


2302


. Magnetic flux Φ in inductor


2302


increases linearly with time according to Equation 33,












Φ



t


=


L








I



t



=
V





[
33
]













where, for time period t


1


, V=V


bat


.




Energy from battery


108


generates current I in inductor


2302


, thereby storing energy E according to Equation 34 and as shown in FIG.


24


.








E=LI




2


/2  [34]






At the end of time period t


1


, drive circuit


244


applies an off-level voltage, below the threshold voltage of MOS power switching transistor


246


, to gate


245


, thereby changing transistor


246


into an open circuit. The magnetic flux in inductor


2302


may be thought of as the collective momentum of the electrons. This momentum causes the current in inductor


2302


to continue to flow, even though it cannot flow through MOS power switching transistor


246


. This current charges node


2347


to a sufficient voltage, V


2


(as shown in FIG.


24


), to forward bias diode


248


, and current flows into capacitor


114


, increasing charge voltage by ΔV


2


.




Because the continuing current in inductor


2302


is working against voltage V


2


, which is larger than V


bat


, the current (and attendant magnetic flux) will decrease according to Equation 33 with V=−(V


2


−V


bat


). When magnetic flux Φ reaches zero, current ceases to flow, and charging time period t


2


comes to an end. The two time periods are therefore related by Equation 35:






Φ


max




=V




bat




t




1


=(


V




2




−V




bat


)


t




2


  [35]






Making the approximation that increase in capacitor voltage ΔV


2


during time period t


2


is small compared with voltage V


2


, and that there are not other losses, ΔV


2


is given by the energy transfer relationship Equation 36:











Φ
max
2


2

L


=



1
2



LI
max
2


=




V
bat
2



t
1
2



2

L


=

C





Δ






V
2








[
36
]













e. Limitations of Charge Circuits




In principle, circuit


2300


is capable of converting battery energy into energy stored on capacitor


114


with efficiency limited by only the parasitic resistance of the components. In practice, however, circuit


2300


has limitations.




As capacitor voltage becomes much larger than battery voltage, t


2


becomes much smaller than t


1


. A typical inductor has energy capacity that is orders of magnitude lower than that of a flash capacitor. Therefore, circuit


2300


operates over several hundred thousand cycles for each recharge.




As an example, at 200,000 cycles per charge, accommodating a flash every 2 seconds requires t


1


to be on the order of 10 μs. If the maximum capacitor voltage is 50 times the battery voltage, t


2


is on the order of 200 ns. To charge a flash capacitor at this rate requires use of an extremely high-speed, high-voltage diode as diode


248


.




Many high-voltage diodes achieve their performance by using conductivity modulation. But, once forward-biased, a conductivity-modulated diode transitions for approximately a minority-carrier storage time period before it becomes non-conducting again. The reverse current carried by the diode during the diode's minority-carrier storage time (before it turns off) leads to a loss of energy efficiency because current (and therefore energy) is drained back out of the capacitor. This inefficiency becomes more severe as t


2


became shorter.




A second practical limitation is that MOS power switching transistor


246


withstands the maximum capacitor voltage (e.g., 350 V) when it is non-conducting, and carries the battery current when it is conducting. In the example given above, the Volt-Amp rating of MOS power switching transistor


246


is 50 times the power that is actually being delivered to capacitor


114


. A device required to function within both of these limitations could be expensive. Also, the gate capacitance of a MOS power switching transistor that met the specifications would be about 50 times higher than that of a more appropriately sized MOS power switching transistor, and thus the drive power supplied by drive circuit


244


also would have to be 50 times as high. Oversized circuits lower energy efficiency.




f. Flyback Converters





FIG. 2

is a schematic diagram of a flyback converter charge circuit. Circuit


200


is similar to circuit


2300


; however, single inductor


2302


has been replaced by coupled inductor


241


, made up of primary winding


242


and secondary winding


243


. A coupled inductor is distinguished from a transformer in that, in the former, current flows in only one winding at one time. Primary winding


242


and secondary winding


243


are wound on common core


250


and share magnetic flux. Secondary winding


243


has N turns for every turn of primary winding


242


, giving a turns ratio of N. Because of the turns ratio, voltage


249


across secondary winding


243


is N times the voltage across primary winding


241


.




Because windings


242


and


243


have different numbers of turns, output voltage and current calculations from single-inductor circuit


2300


are modified accordingly. Magnetic flux is the line integral of the vector potential around a closed path, such as a single turn of a winding. Defining φ as flux per turn, total flux for a winding is φ multiplied by the number of turns. The vector potential—the flux per turn—is shared by windings


242


and


243


. If n is the number of turns in primary winding


242


, then Nn is the number of turns in secondary winding


243


. If the total flux in primary winding


242


is Φ


1


, then the corresponding flux in secondary winding


243


is Φ


2


=NΦ


1


.





FIG. 3

is a timing diagram for circuit


200


. Drive circuit


244


applies a drive pulse, shown as trace


301


, to gate


245


of MOS power switching transistor


246


for a time period t


1


. The pulse of on-level gate voltage causes MOS power switching transistor


246


to connect battery


108


across primary winding


242


, pulling to ground drain voltage V


drain


, which is shown as trace


303


. Magnetic flux Φ in primary winding


242


, shown as trace


302


, increases linearly with time according to the relation Φ=V


bat


t. After time t


1


has elapsed, flux Φ is at its maximum value, Φ


max


, given by Equation 37:






Φ


max




=V




bat




t




1


  [37]






At the end of time period t


1


, drive circuit


244


turns off MOS power switching transistor


246


. Current (electron momentum) established in primary winding


242


by the voltage from battery


108


cannot continue to flow. However, secondary winding


243


carries current through high-voltage diode


248


onto capacitor


114


, increasing the latter's charge. Voltage across secondary node


249


is shown as trace


304


in FIG.


3


. Because the continuing current is in secondary winding


243


, the initial secondary flux will be NΦ


max


. Because the electron momentum is working against voltage V


2


, magnetic flux Φ


2


in secondary


243


will decrease according to the relation Φ


2


=NΦ


max


−V


2


t. After time period t


2


, flux has decreased to zero; therefore, Φ


max


is also given by Equation 38:













max




=V




2




t




2


  [38]






If Φ


max


is eliminated from Equations 37 and 38, the relation between time periods t


1


and t


2


is given in Equation 39:








NV




bat




t




1




=V




2




t




2


  [39]






If turns ratio N is chosen to be of the same order as V


2


/V


bat


, then t


1


and t


2


will be comparable, as illustrated in FIG.


3


.




The voltage at drain


247


of MOS power switching transistor


246


has a maximum near twice the battery voltage, and diode


248


has time to recover from minority-carrier storage, but must withstand a maximum reverse bias of twice the maximum capacitor voltage. These constraints are easier and more economical to satisfy than are the high-speed switching time for diode


248


and power requirements on MOS switching transistor


246


of boost-converter circuit


200


. Charging circuits that use a flyback converter are described in U.S. Pat. No. 6,219,493, U.S. Pat. No. 5,430,405, and U.S. Pat. No. 4,272,806.




g. Control of Overshoot Voltage Spikes




In some charging circuits that switch large currents, fast turn-off times are desired for high efficiency and low power dissipation in the turn-off switch. However, large rates of change of current through circuit inductance cause overshoot voltages.





FIG. 25

is FIG. 3 of U.S. Pat. No. 6,091,906; it illustrates charging circuit


2500


. Bipolar transistor


2529


is used as a turn-off switch. Overshoot voltages are addressed by resistor


2534




b


being in series with the base of bipolar transistor


2529


. The base voltage is approximately constant during the high-current phase of the turnoff, and resistor


2534




b


, in conjunction with the base-collector capacitance, becomes an integrator, which controls the dV/dt of the collector.




However, since the base voltage is typically above the full turn-on voltage for bipolar transistor


2529


, there is a time delay between the time that a turn-off voltage is sent to resistor


2534




b


, and the time that bipolar transistor


2529


starts to turn off. There is a corresponding turn-on wait, after the pulse rises and before the voltage reaches the turn-on voltage. There is no direct control of the overshoot voltage; rather, there is control of only dV/dt. Depending on other circuit elements, this circuit may not control overshoot voltages effectively. The remainder of the components in

FIG. 25

are discussed in U.S. Pat. No. 6,091,906.




h. Coupled Inductors for Charge Circuits




The maximum energy delivered to capacitor


114


during any one cycle of flyback circuit


200


(

FIG. 2

) is the energy stored in core


250


at saturation. Cores become lossy when they are close to saturation. Limiting the drive current to prevent core saturation conserves energy.




Flash capacitor


114


may be recharged rapidly so that the photographer does not have to wait before taking the next photograph. Charge circuits employing such cores may run at low efficiency so that the capacitor can be charged rapidly. For rapid charging to be possible, flyback converter


200


must be at a high frequency, thereby converting, as many times per second as possible, the magnetic energy stored in the core into electric energy of charge stored on capacitor


114


. Some cores made from ferromagnetic material, however, have loss that increases rapidly with frequency, even when they are driven well below saturation. Core materials and configurations are discussed further in


Magnetic Field Evaluation in Transformers and Inductors


, L. H. Dixon and


Transformer and Inductor Design Handbook


, W. T. McLyman, Marcel Dekker, 1988.




i. Limitations of Coupled Inductors





FIG. 4A

is a cross-sectional view of windings


242


and


243


of typical coupled inductor


241


used for experimental measurements. Windings


242


and


243


were wound on plastic bobbin


460


, and insulated from each other by insulating tape


468


. Primary winding


242


was formed of seven turns of #16 insulated magnet wire; secondary winding


243


was formed of 76 turns of #30 insulated magnet wire.





FIG. 4B

is a cross-sectional view of a ferrite core. Core


250


was ferrite “pot” core model P-P26/16-3F3-A315 supplied by Ferroxcube (information concerning both the material and the core configuration is available on the web site: http://www.ferroxcube.com). Ferrite core


250


was made in two halves


455


and


456


, which match at part line


458


. The central part contained gap


462


, of 0.35 mm, which introduced a thin region of air into the otherwise high-permeability magnetic path. Gaps typically linearize the flux-drive curve, making performance characteristics more repeatable. Within the inner core space, plastic bobbin


460


supported windings


242


and


243


, shown with a large “X” in FIG.


4


A. The construction of windings


242


and


243


has a major influence on efficiency of a flyback converter charge circuit such as circuit


200


.




The example inductor was measured to have, at 100 kHz, a primary inductance with secondary open of 15.9 μH, and secondary inductance with primary open of 1.85 mH. The ratio of inductance was the square of turns ratio N, as expected. The primary resistance at 1 kHz was 26 mΩ; at 100 kHz, however, it was 113 mΩ. Skin effect is the increase in resistance (added parasitic resistance) with frequency. Skin effect is caused by currents confined to the surface of the conductor at high frequencies. This parasitic resistance was measured with a sine wave at 100 kHz to be 4.5 times larger than the intrinsic wire resistance. In typical primary windings (as shown in FIG.


4


B), large cross-sectional area is achieved through use of wire that has a large diameter, so that resistance, and losses due to resistive loss, are lowered. Use of larger-diameter wire, however, results in a smaller surface-to volume-ratio, and therefore in higher skin-effect losses.




At 100 kHz, harmonics are present in the current waveform that make the effective parasitic resistance even higher. One problem with typical winding configurations is that there is a relatively large increase in parasitic resistance as the operating frequency is increased.




Primary inductance of coupled inductor


241


was measured to be 0.55 μH, with secondary


243


shorted, at 100 kHz. This parasitic inductance—the leakage inductance of the primary winding—would be zero in the case of a perfectly coupled inductor. It is caused by primary magnetic flux that is not shared by the secondary. Leakage inductance causes overshoot-voltage problems for flyback converters.




At the end of time period t


1


, just after MOS power switching transistor


246


turns off, the voltage on secondary winding


243


is clamped by high-voltage diode


248


to a voltage just above the capacitor voltage. If coupled inductor


241


has no leakage inductance, the primary voltage is clamped to a value of V


2


/N. However, because of the leakage inductance, the voltage on primary


242


can rise to an arbitrarily high value as the current through MOS power switching transistor


246


decreases. The high voltage appears as the drain voltage V


d


of MOS power switching transistor


246


. Transistors of this type are easily damaged by drain voltages that are in excess of a maximum rating. The voltage spike at the end of t


1


has thus presented a challenging problem for designers of flash-capacitor charge circuits. Various approaches to this problem are illustrated in U.S. Pat. No. 6,069,803, U.S. Pat. No. 5,880,943, and U.S. Pat. No. 5,485,361.





FIG. 26

is FIG. 3 from U.S. Pat. No. 6,069,803. Circuit


2600


includes an active snubber circuit that consists of two MOS transistors with their associated driving circuitry (not shown in the figure)—inductor


2601


, capacitors


2602


and


2603


, and diodes


2605


and


2606


—which address excess voltage. Circuits with active snubbers are complex and have critical timing requirements, so they are costly to manufacture. The remaining components in

FIG. 26

are discussed in U.S. Pat. No. 6,069,803.




j. Drive Circuits





FIG. 27

is a schematic diagram of a typical self-excited drive circuit. Self-excited drive circuit


2700


is similar to circuit


200


, but contains in addition switch


2752


and uses a modified coupled inductor


2741


that includes drive winding


2751


in addition to primary winding


2742


and secondary winding


2743


around core


2750


. Many flash circuits use such a self-excited drive circuit, in which the drive voltage is derived from drive winding


2751


; see, for example, U.S. Pat. No. 6,147,460, U.S. Pat. No. 6,091,906, U.S. Pat. No. 6,066,926, U.S. Pat. No. 5,966,552, U.S. Pat. No. 5,814,948, U.S. Pat. No. 5,781,804, U.S. Pat. No. 5,780,976, U.S. Pat. No. 5,282,120, U.S. Pat. No. 4,522,479, and U.S. Pat. No. 4,305,649.





FIG. 28

is a graph of a flux-versus-drive curve for circuit


2700


, represented by curve


2880


, the “B-H curve” for core


2750


.





FIG. 29

is a timing diagram of the operation of self-excited drive circuit


2700


. When switch


2752


is closed at t


close


(shown as time marker


2906


), residual sub-threshold conduction in MOS power switching transistor


246


causes the battery voltage to be applied to primary winding


2742


. The drain voltage of transistor


246


is represented by trace


2901


. This increase in primary voltage is transmitted immediately to drive winding


2751


, which further turns on MOS power switching transistor


246


. Flux Φ in core


2750


, shown as trace


2902


, rises with time, as does current drained from battery


108


, shown as trace


2904


. Voltage at gate


245


, shown as trace


2903


, is derived from drive winding


2751


, and is proportional to the time derivative of flux Φ, keeping MOS power switching transistor


246


in its on state as long as the flux is rising uniformly.




As flux Φ approaches saturation at t


sat


, (shown as time marking


2907


), its time derivative decreases. Gate voltage


245


on MOS power switching transistor


246


begins to decrease as well. MOS power switching transistor


246


begins to reduce the voltage across primary winding


2742


, causing drain voltage V


d


(shown as trace


2901


) to rise above V


bat


. Positive feedback turns off MOS power switching transistor


246


. Capacitor


114


begins to charge at the start of time period t


2


, draining energy from core


2750


. The cycle then repeats.




A self-excited flyback converter may be advantageous because it is self-regulating. On-time t


1


is derived directly from the maximum energy-storage capability of core


2750


and from the battery voltage. Off-time t


2


is derived directly from the energy stored in core


2750


, and from capacitor voltage. Circuit


2700


charges capacitor


114


as fast as battery


108


and core


2750


will permit. Operation can be robust against variations in the properties of components. These attributes make self-excited flyback-converter circuits attractive for use in low-cost camera systems.




Despite some possible advantages, self-excited flyback-converter circuits are inefficient. Because core


2750


is driven into saturation at the end of time period t


1


, the inductance of primary winding


2742


is greatly reduced, and a great deal of current is drawn from battery


108


that does not result in energy stored in core


2750


. The effect of saturation is illustrated by battery-current waveform


2904


, in FIG.


29


. The energy wasted during this brief period is typically more than one-half of the total energy removed from the battery. An additional source of energy loss is hysteresis in core


2750


when the latter is driven into saturation. Because of these and other energy-loss mechanisms, charge circuits supplied in some low-cost cameras are less than 25% efficient.




Efficiency problems in self-excited flyback-converter circuits may be mitigated by use of drive circuits that are not based on a voltage generated by an auxiliary winding on coupled inductor


2741


. Such separately excited flyback-converter circuits are described in U.S. Pat. No. 6,219,493, U.S. Pat. No. 6,130,528, U.S. Pat. No. 5,498,951, U.S. Pat. No. 5,430,405, U.S. Pat. No. 4,070,699, and U.S. Pat. No. 4,027,199. Although some separately excited flyback-converter circuits may show efficiency improved over that of over self-excited circuits, they are typically less than 30% efficient.





FIG. 5

is FIG. 5 from U.S. Pat. No. 5,430,405. Circuit


500


is an example of a separately excited flyback converter. Gate


245


of MOS power switching transistor


246


is controlled by bi-stable set-reset flip-flop


5102


. When flip-flop output


5106


is high, MOS power switching transistor


246


connects primary winding


242


to ground. Flux Φ increases linearly with time at a rate proportional to source voltage V


in


. Concurrently, switch


593


, operated by output


5106


, delivers current from current source


591


to model capacitor


592


. This current causes voltage V


mc


on model capacitor


592


to increase linearly with time as well.




The value of current source


591


is made proportional to the value V


in


of a voltage source, for example, battery


108


. Thus, the voltage on model capacitor


592


and the flux in the core of coupled inductor


241


both increase at a rate proportional to the source voltage V


in


.




When the voltage on model capacitor


592


, V


mc


, reaches value V


1


(set by voltage source


596


), a reset signal is sent by comparator


594


to flip-flop


5102


. Flip-flop


5102


responds by setting to low output


5106


, turning off MOS power switching transistor


246


, and concurrently setting to its “b” position switch


593


and thus connecting capacitor


592


to second current source


590


. Voltage V


mc


on model capacitor


592


decreases linearly with time as current flows into second current source


590


, whereas flux Φ decreases linearly with time as flash capacitor


114


is charged.




The value of current source


590


is proportional to the output voltage V


o


. Thus, the rate of decrease of flux Φ in core


250


and the rate of decrease of voltage V


mc


on model capacitor


592


are both proportional to output voltage V


o


. When voltage V


mc


on model capacitor


592


reaches value V


2


, set by voltage source


5100


, a “set” signal is sent to flip-flop


5102


. Flip-flop output


106


is driven high, MOS power switching transistor


246


turns on, switch


593


is set back to its “a” position, and the cycle repeats.




The voltage on model capacitor


592


is an analog model of the flux in coupled inductor


241


. Circuit


500


adjusts the on time and off time to extract energy from battery


108


optimally, and delivers that energy to a load (that is, to the flash capacitor), according to the values of battery


108


and output voltage V


o


. When output voltage V


o


rises to required maximum value V


ref


, set by reference voltage


5120


, operational amplifier


5122


increases V


E


. If switch


593


is in position “a”, increased V


E


causes current from current source


591


to increase. The speed at which model capacitor


592


reaches a charge voltage greater than V


1


increases. Therefore, comparator


594


triggers a reset in flip-flop


5102


sooner, and the on time is shorter. If switch


593


is in the “b” position, increased V


E


(subtracted at junction


5126


) causes current source


590


to drain model capacitor


592


more slowly, making the off-time longer. Both of these conditions slow the rate at which charge is delivered to capacitor


114


.




Separate-excitation controller circuit


500


enables energy to be converted from battery


108


to capacitor


114


at a rate consistent with the flux in coupled inductor


241


being kept below its saturation value. A safety factor for the on and off times can be set by scaling of current sources


590


and


591


with respect to voltages V


o


and V


in


. The circuit is discussed further in U.S. Pat. No. 5,430,405.




k. Limitations of Drive Circuits




Drive circuit


500


of

FIG. 5

adapts to both output and supply voltages. There are, however, limitations in circuit


500


that prevent it from controlling optimally the charging of photoflash capacitor


114


from battery


108


. One such limitation is imposed by the nature of battery


108


itself. Because the generation of electrical energy within a battery is an electrochemical process, there is an upper limit to the current that can be drawn from the battery without seriously affecting battery life. This upper current limit usually decreases as a battery becomes discharged. When circuit


500


is used to control the charging of photoflash capacitor


114


, the off time, t


off


, is shortened as capacitor voltage


130


(V


o


) increases. The average current drawn from battery


108


depends on battery voltage V


bat


and on capacitor voltage V


o


according to Equation 40:










I
av

=




I
p

2








t
on


(


t
on

+

t
off


)







I
p

2








V
o


(


V
o

+

NV
bat


)








[
40
]













I


p


is the peak inductor current. The approximation derives from Equation 39, assuming that t


on


>t


1


and t


off


>t


2


. If charge circuit


500


is able to charge the photoflash capacitor quickly from low voltages, when the discharge time of the secondary is long, it will draw too much current from the battery when the capacitor voltage is high and the off time is short.




In circuit


500


shown in

FIG. 5

, and in similar circuits (as in the above references), there is no protection of battery


108


from excessive current drain at high output voltages. This limitation has been sufficiently problematic that a recent approach to remedy it (described in U.S. Pat. No. 6,219,493) has been the incorporation of a microprocessor in a drive circuit. Such a remedy is complex, requiring several analog-to-digital conversions for its implementation.




Another limitation of circuit


500


is that operational amplifier


5122


has an input connected to output voltage V


o


. In the days when vacuum tubes were in common use, it would not have been unreasonable to have an input connected to a 350 V signal. However, circuits that can withstand such voltages are expensive to construct with modern technologies. Circuit


500


also requires reference-voltage source


5120


to have the same voltage V


ref


as the desired maximum value of charge voltage V


o


, and to comprise at least one additional reference voltage


596


for its proper operation. Both of these requirements make circuit


500


complex and expensive for portable, battery-powered photoflash systems. Although each of the above-discussed circuits may have certain advantages, none appears to satisfy all the requirements of a high-efficiency battery-powered photographic flash unit.



Claims
  • 1. A photographic flash, comprising:a flash tube filled with an ionizable gas; a photoflash capacitor connected to supply energy to said flash tube; a majority-carrier switching device, responsive to a control signal, connected to conduct current through said flash tube; a trigger circuit, responsive to a trigger signal, connected to said flash tube; and a controller configured to send said trigger signal to said trigger circuit thereby to cause said gas in said flash tube to ionize, and configured to send said control signal to said majority-carrier switching device thereby to allow a flow of a current through said flash tube, thereby to initiate a flash discharge, and further configured to turn on and turn off said majority-carrier switching device a plurality of times while said gas in said flash tube remains ionized, thereby to cause a plurality of flash discharges.
  • 2. The photographic flash of claim 1, wherein said controller is configured to turn off said majority-carrier switching device, thereby to terminate the flow of said current through said flash tube after a period of time, thereby to terminate said flash discharge.
  • 3. The photographic flash of claim 2, wherein said controller comprises an interface for receiving commands from an exposure measurement system.
  • 4. The photographic flash of claim 1, further comprising a charging circuit for charging said photoflash capacitor to a pre-determined voltage.
  • 5. The photographic flash of claim 1, containing a series circuit comprising said photoflash capacitor, said flash tube, and said majority-carrier switching device.
  • 6. The photographic flash of claim 5, wherein said majority-carrier switching device comprises a MOS transistor having a source, a drain, and a gate, wherein said drain is connected to said flash tube, said source is connected in series with said photoflash capacitor in said series circuit, and said gate is connected to respond to said control signal from said controller.
  • 7. A charging circuit for charging a photoflash capacitor, comprising:a DC power source; a coupled inductor, comprising: a primary winding comprising a plurality of primary winding layers, said primary winding layers electrically connected in parallel; a secondary winding comprising a plurality of secondary winding layers, said secondary winding layers electrically connected in series; and a magnetic core; wherein said primary winding layers and said secondary winding layers are alternately layered around said magnetic core; a switching transistor connected to conduct from said DC power source a current through said primary winding; a driving circuit for providing a control signal to turn said switching transistor on and off, thereby to start and stop said current through said primary winding, thereby generating a charging current in said secondary winding by induction; and a rectifier for charging said photoflash capacitor with said charging current.
  • 8. The charging circuit of claim 7, wherein said primary winding layers are comprised of wire, said wire comprising a plurality of strands.
  • 9. The charging circuit of claim 7, wherein said switching transistor comprises a gate, a source, and a drain; said charging circuit containing a series circuit comprising said DC power source, said primary winding, said drain, and said source; and said gate is responsive to said control signal from said driving circuit.
  • 10. The charging circuit of claim 7, containing a series circuit comprising said secondary winding, said rectifier, and said photoflash capacitor.
  • 11. The charging circuit of claim 7, further comprising a smoothing circuit for smoothing the rate at which current is drained from said DC power source.
  • 12. The charging circuit of claim 11, wherein said smoothing circuit comprises an inductive-capacitive filter.
  • 13. The charging circuit of claim 12, wherein said inductive-capacitive filter comprises a filter inductor between said DC power source and said primary winding and a filter capacitor, and wherein said charging circuit contains a series circuit comprising said filter capacitor, said filter inductor, and said DC power source.
  • 14. The charging circuit of claim 7, wherein said DC power source comprises a battery.
  • 15. The charging circuit of claim 7, wherein said primary winding of said coupled inductor has a leakage inductance which is capable of producing an inductive overshoot voltage across said switching transistor, and said charging circuit further comprises a damping circuit for decreasing said inductive overshoot voltage.
  • 16. The charging circuit of claim 15, wherein said damping circuit comprises a damping resistor and a damping capacitor, and containing a series circuit comprising said damping resistor, said damping capacitor, and said primary winding.
  • 17. The charging circuit of claim 15, wherein said damping circuit comprises a damping inductor connected to hold said switching transistor in a partially-on state after said driving circuit has switched said control signal to turn said switching transistor off and until said current through said primary winding decreases to substantially zero.
  • 18. The charging circuit of claim 17, wherein said damping inductor has an inductance approximately equal to said leakage inductance multiplied by the ratio of the on voltage of said switching transistor to a maximum allowable value of said inductive overshoot voltage across said switching transistor.
  • 19. The charging circuit of claim 17, wherein said switching transistor comprises a gate, a source, and a drain; said drain is connected to said primary winding, and said damping inductor is connected to said source.
  • 20. The charging circuit of claim 7, further comprising a quick-start circuit for charging said photoflash capacitor to a quick-start voltage, prior to charging with said charging current, said quick-start circuit comprising a resistor and a diode in series between said DC power source and said photoflash capacitor.
  • 21. The charging circuit of claim 20, wherein said primary winding has a leakage inductance capable of producing an overshoot voltage across said switching transistor, and said charging circuit further comprises a damping circuit for decreasing said overshoot voltage, and said charging circuit further comprises a smoothing circuit for smoothing the rate at which current is drained from said DC power source.
  • 22. The charging circuit of claim 21, wherein said DC power source comprises a battery.
  • 23. A driving circuit for providing an on-off control signal for controlling a charging circuit for charging a photoflash capacitor,wherein said charging circuit comprises a DC power source, an inductor having a primary winding, and a switching transistor operative to turn on and turn off a primary current through said primary winding; and wherein said driving circuit comprises: a DC voltage input from said DC power source of said charging circuit; a charge-state input, representing a voltage on said photoflash capacitor; a model capacitor having a model voltage; a first current source, configured to charge said model capacitor in a first direction, said first current source capable of producing a first model current substantially in proportion to said charge-state input when said charge-state input is below a first threshold, increasing said first model current less than proportionately to said charge-state input when said charge-state input is above said first threshold and below a second threshold, and producing a substantially zero value of said first model current when said charge-state input is above said second threshold; a second current source, configured to charge said model capacitor in a second direction, said second current source capable of producing a second model current proportional to said DC voltage input; a bistable controller having an on state and an off state; and an electronic switch circuit for connecting said model capacitor alternately to said first current source when said bistable controller is in said off state and to said second current source when said bistable controller is in said on state, such that said first and second model currents charge said model capacitor alternately in opposite directions at rates determined by said charge-state input and said DC voltage input, respectively; wherein said bistable controller is responsive to said model voltage, such that said on state is entered when said model voltage reaches a first reference voltage, and such that said off state is entered when said model voltage reaches a second reference voltage, said bistable controller thereby capable of effecting a cyclic on-off action and producing said on-off control signal as its output; and wherein said on-off control signal has an on level when said bistable controller is in said on state and an off level when said bistable controller is in said off state, said on level operative to control said switching transistor of said charging circuit to turn on said primary current, and said off level operative to control said switching transistor of said charging circuit to turn off said primary current.
  • 24. The driving circuit of claim 23, wherein said on state has a duration substantially inversely proportional to said DC voltage input.
  • 25. The driving circuit of claim 24, wherein said off state has a duration substantially inversely proportional to said charge-state input while said charge-state input is less than said first threshold.
  • 26. The driving circuit of claim 25, wherein said off state has a duration that decreases less than inversely proportionally to said charge-state input when said charge-state input is greater than said first threshold and less than said second threshold.
  • 27. The driving circuit of claim 26, wherein said cyclic on-off action stops with said bistable controller in said off state when said charge-state input is greater than said second threshold.
  • 28. The driving circuit of claim 26, wherein said DC power source comprises a battery having a maximum safe current rating, and the rate of said cyclic on-off action does not exceed that rate at which a current equal to said maximum safe current rating would be drawn from said battery.
  • 29. The driving circuit of claim 23, further comprising at least one voltage reference circuit comprising a solid-state voltage reference element, said at least one voltage reference circuit configured to generate said first reference voltage and said second reference voltage.
  • 30. The driving circuit of claim 23, wherein said first and second current sources comprise transistors biased in saturation.
  • 31. The driving circuit of claim 23, wherein said charge-state input comprises a current input, such that said charge-state input can be supplied by a voltage-dropping resistor, said voltage-dropping resistor connected between said charge-state input and said photoflash capacitor.
  • 32. A charging circuit for charging a photoflash capacitor, comprising:a DC power source; a coupled inductor, comprising: a primary winding comprising a plurality of primary winding layers, said primary winding layers electrically connected in parallel; a secondary winding comprising a plurality of secondary winding layers, said secondary winding layers electrically connected in series; and a magnetic core; wherein said primary winding layers and said secondary winding layers are alternately layered around said magnetic core; a switching transistor operative to turn on and turn off a primary current through said primary winding, thereby generating a charging current in said secondary winding by induction; a rectifier for charging said photoflash capacitor with said charging current; and a driving circuit for controlling said switching transistor, wherein said driving circuit comprises: a DC voltage input from said DC power source; a charge-state input, representing a voltage on said photoflash capacitor; a model capacitor having a model voltage; a first current source, configured to charge said model capacitor in a first direction, said first current source capable of producing a first model current substantially in proportion to said charge-state input when said charge-state input is below a first threshold, increasing said first model current less than proportionately to said charge-state input when said charge-state input is above said first threshold and below a second threshold, and producing a substantially zero value of said first model current when said charge-state input is above said second threshold; a second current source, configured to charge said model capacitor in a second direction, said second current source capable of producing a second model current proportional to said DC voltage input; a bistable controller having an on state and an off state; and an electronic switch circuit for connecting said model capacitor alternately to said first current source when said bistable controller is in said off state and to said second current source when said bistable controller is in said on state, such that said first and second model currents charge said model capacitor alternately in opposite directions at rates determined by said charge-state input and said DC voltage input, respectively; said bistable controller being responsive to said model voltage, such that said on state is entered when said model voltage reaches a first reference voltage, and such that said off state is entered when said model voltage reaches a second reference voltage, said bistable controller thereby capable of effecting a cyclic on-off action; and wherein said bistable controller is operative to control said switching transistor to turn on said primary current when said bistable controller is in said on state, and to turn off said primary current when said bistable controller is in said off state.
  • 33. The charging circuit of claim 32, wherein said DC power source comprises a battery.
  • 34. The charging circuit of claim 32, wherein said on state has a duration substantially inversely proportional to said DC voltage input.
  • 35. The charging circuit of claim 34, wherein said off state has a duration substantially inversely proportional to said charge-state input while said charge-state input is less than said first threshold.
  • 36. The charging circuit of claim 35, wherein said off state has a duration that decreases less than inversely proportionally to said charge-state input when said charge-state input is greater than said first threshold and less than said second threshold.
  • 37. The charging circuit of claim 36, wherein said DC power source comprises a battery having a maximum safe current rating, and the rate of said cyclic on-off action does not exceed that rate at which a current equal to said maximum safe current rating would be drawn from said battery.
  • 38. The charging circuit of claim 36, wherein said cyclic on-off action stops with said bistable controller in said off state when said charge-state input is greater than said second threshold.
  • 39. The driving circuit of claim 38, wherein said charge-state input comprises a current through a voltage-dropping resistor, said voltage-dropping resistor connected to said photoflash capacitor.
CROSS-REFERENCE TO RELATED APPLICATION

Co-pending application 09/515807, High-Sensitivity Storage Pixel Sensor Having Auto-Exposure Detection, assigned to Foveon, Inc., is incorporated by reference.

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