Patent Application
20190215591
This invention relates to microphones, and in particular to electret condenser microphones and a method of manufacturing the same.
An electret condenser microphone (ECM) is a type of electrostatic capacitor-based microphone. Today, electret condenser microphones are widely used in electronic devices like mobile phones, laptops, etc.
In a typical electret condenser microphone, the active capacitance forms a capacitive charge divider with the various parallel passive capacitances. In general, the sensitivity of a microphone is reduced by the ratio of the active capacitance divided by the sum of both active and passive capacitances. In typical electret condenser microphones, this may reduce the sensitivity of the microphone by anywhere from 6 to 10 dB or more, decreasing the electrical SNR.
In most standard ECM amplifiers, the high input impedance amplifier is placed on a printed wire board (PWB) away from the backplate of the ECM. This structure requires an insulation ring and a conductive ring to carry the charge from the backplate to the input of a high input impedance amplifier on the PWB. This connection arrangement produces significant stray capacitance.
It is expected to minimize the amount of stray capacitance loading the input and increase the sensitivity and therefore the SNR of a microphone.
According to one embodiment, an electret condenser microphone is provided. The electret condenser microphone comprises a diaphragm, a backplate with a metal layer on the side facing the diaphragm and an amplifier on the other side, the input of the amplifier electrically connecting the metal layer, a spacer separating the diaphragm and the backplate; and a metal sleeve accommodating the diaphragm, the backplate and the spacer.
In some embodiments, the backplate in the electret condenser microphone is formed of common PWB material such as Kapton, epoxy impregnated fiberglass, epoxy resins, and the like.
In some embodiments, the spacer in the electret condenser microphone is formed of annular insulating material such as mylar.
In some embodiments, the amplifier is a JFET and the input is the JFET's gate terminal.
In some embodiments, the electret condenser microphone further comprises a connecting layer and a bottom layer, the connecting layer electrically connecting terminals of the amplifier to the pads on the bottom layer.
In some embodiments, the connecting layer in the electret condenser microphone is formed of annular PWB with conductive connectors protruding through the body of connecting layer.
In some embodiments, the bottom layer in the electret condenser microphone comprises a PWB substrate, conductive connectors embedded in the PWB substrate, traces and pads on the PWB substrate.
In some embodiments, the electret condenser microphone further comprises an anti-dust cover within the metal sleeve at the opening of the electret condenser microphone.
According to one embodiment, a method of manufacturing an electret condenser microphone is provided. The method comprises the steps of providing a diaphragm; providing a backplate with a metal layer on its surface towards the diaphragm and an amplifier on the other surface, the input of the amplifier being electrically connected to the metal layer; providing an insulating spacer; and bonding the diaphragm, the insulating spacer and the backplate together and inserting them into a metal sleeve.
According to one embodiment, a method of manufacturing an electret condenser microphone is provided. The method comprises the steps of providing a diaphragm; providing a backplate with a metal layer on its surface towards the diaphragm and an amplifier on the other surface, the input of the amplifier being electrically connected to the metal layer; providing a bottom layer with conductors extend through the substrate of the bottom layer and traces and pads on its surface; providing an insulating spacer; providing a connecting layer with conductive connectors protruding through the body of the connecting layer; and bonding the diaphragm, the backplate, the bottom layer, the spacer and the connecting layer together and inserting them into a metal sleeve.
The foregoing and other features of the present disclosure will become more fully apparent from the following description and appended claims, taken in conjunction with the accompanying drawings. Understanding that these drawings depict only several embodiments in accordance with the disclosure and are, therefore, not to be considered limiting of its scope, the disclosure will be described with additional specificity and detail through use of the accompanying drawings.
The various features illustrated in the drawings may not be drawn to scale. Accordingly, the dimensions of the various features may be arbitrarily expanded or reduced for clarity. In addition, some of the drawings may not depict all of the components of a given system, method or device.
In the following detailed description, reference is made to the accompanying drawings, which form a part hereof. In the drawings, similar symbols typically identify similar components, unless context dictates otherwise. The illustrative embodiments described in the detailed description, drawings, and claims are not meant to be limiting. Other embodiments may be utilized, and other changes may be made, without departing from the spirit or scope of the subject matter presented here. It will be readily understood that the aspects of the present disclosure, as generally described herein, and illustrated in the Figures, can be arranged, substituted, combined, and designed in a wide variety of different configurations, all of which are explicitly contemplated and make part of this disclosure.
Backplate 104 is made of an electrically conducting material or any material including a conductive coating. In one embodiment, backplate 104 is a PWB with an insulating substrate and electrically conducting patterns on the surface of the substrate. Diaphragm 102 and backplate 104 form a capacitor together with spacer 103 between them. There is a charged layer, i.e. the electret layer, either on diaphragm 102 or on backplate 104 to provide the capacitor with a permanent charge. Spacer 103 is made of dielectric material. In one embodiment of the invention, diaphragm 102 and backplate 104 are punched into a disk shape and accordingly, spacer 103 is an annular insulator such as mylar.
In electret condenser microphone 100, diaphragm 102, spacer 103, and backplate 104 are enclosed in metal sleeve 101.
Backplate 104 can be a PWB comprising an insulating substrate 107 and a metal layer 108 on its surface towards diaphragm 102. A circuit for processing the electrical signals to be generated by the microphone in this invention is placed on the other surface of backplate 104, which, among other components, include an amplifier. For example, the amplifier can be a junction field-effect transistor (JFET) 109. JFET 109 comprises a gate terminal, a drain terminal, and a source terminal. The gate terminal of JFET 109 is connected to metal layer 108 by a through-hole 110. Through-hole 110 has an electrical conducting interior surface extending through substrate 107 and thus it can electrically connect components on both sides of substrate 107. Copper traces 111 electrically connect source/drain terminals of JFET 109 to pads 113. Conductive pads 113 are used for grounding/connecting to other electrical components. They are the output terminals of electret condenser microphone 100. Spacer 103 is placed between diaphragm 102 and backplate 104. Diaphragm 102, spacer 103 and the backplate 104 are placed in metal sleeve 101.
When microphone 100 is working, sound enters the microphone through the opening to the diaphragm 102, causing diaphragm 102 to vibrate with the variations in sound pressure. The movement of the charged diaphragm with respect to backplate 104 creates variations in capacitance. The resulting voltage change is amplified by JFET 109. Voltage variations are coupled to the gate terminal of JFET 109 by through-hole 110. JFET 109 amplifies the output and produces an output speech signal at pads 113, to which source/drain terminal of JFET 213 are coupled. The output signal is proportional to the sound pressure on diaphragm 102.
Electret condenser microphone 100 as showing in
In another embodiment as depicted in
Spacer 403 is positioned under diaphragm 402. Spacer 403 is electrical insulator, mylar with appropriate shape.
Backplate 404 is positioned under spacer 403, which can be a PWB comprising a substrate 407 and a metal layer 408 on its upside surface towards diaphragm 402. A circuit for processing the electrical signals to be generated by the microphone in this invention is placed on the other surface of backplate 404, which, among others, include a JFET 409. JFET 409 is used to transform the high impedance signal of the small capacitor formed by the electret condenser microphone to a more usable value. JFET 409 comprises a gate terminal, a drain terminal, and source terminal. The gate terminal of JFET 409 is electrically connected to metal layer 408 via a through-hole 410. Copper traces 411 electrically connect source/drain terminals of JFET 409 to connectors 412.
Bottom layer 416 can be a PWB comprising an insulating substrate 419, conductive connectors 420 embedded in insulating substrate 419, and copper traces 421 and conductive pads 413 on its down surface. Traces 421 electrically connect connectors 420 with conductive pads 413.
Connecting layer 415 provides electrical connection between connectors 412 on backplate 404 and connectors 420 on bottom layer 416. Connecting layer 415 can be annular PWB with conductive connectors 417 protruding through the body of connecting layer 415.
With this arrangement, terminals of JFET 409 and other components of the circuit on the backplate can be electrically coupled to pads on bottom layer 416.
One advantage of this invention is that it is easy to assemble the electret condenser microphone described here. The major components of the electret condenser microphone according to this invention are PWBs, and they can be manufactured by standard higher volume PWB manufacturing methods. And the microphone can be assembled with automated manufacturing equipment.
In
In step S602, a backplate is provided with metal layer on its surface towards the diaphragm and an amplifier, like a JFET on the other surface. The gate terminal of JFET is connected to metal layer via a through-hole in the backplate.
In step S603, a spacer is provided. The spacer can be a mylar sheet of a ring shape.
In step S604, the diaphragm, the spacer and the backplate are bonded together and inserted into a metal sleeve.
In step S702, a backplate is provided with metal layer on its surface towards the diaphragm and an amplifier, like a JFET on the other surface. The gate terminal of JFET is connected to metal layer via a through-hole in the backplate. Other terminals of the JFET are electrically connected to the conductors in the backplate surface.
In step S703, a bottom layer is provided with conductors extend through the substrate of the bottom layer and traces and pads on its surface. The traces electrically connect the conductors and the pads.
In step S704, a spacer is provided. The spacer can be a mylar sheet of a ring shape.
In step S705, a connecting layer is provided. The connecting layer is formed of annular PWB and has connectors protruding through the body of connecting layer to connect conductors on the backplate and conductors in the bottom layer.
In step S706, the diaphragm, the backplate, the bottom layer, the spacer and the connecting layer are bonded together and inserted into a metal sleeve.
While various aspects and embodiments have been disclosed herein, other aspects and embodiments will be apparent to those skilled in the art. The various aspects and embodiments disclosed herein are for purposes of illustration and are not intended to be limiting, with the true scope and spirit being indicated by the following claims.
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/CN2016/095879 | 8/18/2016 | WO | 00 |
