Claims
- 1. A method of producing an electrical contact material comprising a silver eutectic alloy comprising Ag as the main component in which fine oxide particles are uniformly dispersed, said method comprising the steps of:
- (a) admixing with Ag at least one element selected from the group consisting of Si and Ge;
- (b) melting said admixture of Ag and said at least one element to form an alloy;
- (c) quenching said alloy;
- (d) annealing said quenched alloy in a vacuum;
- (e) plastically working said annealed alloy; and
- (f) internally oxidizing said plastically worked alloy.
- 2. The method according to claim 1 wherein said at least one element is present in a concentration of 1 to 17 at. % based on the weight of the material.
- 3. The method according to claim 1 wherein said at least one element comprises Si, and said alloy is internally oxidized at a temperature of 250.degree. to 840.degree. C.
- 4. The method according to claim 1 wherein said at least one element comprises Si, and said alloy is internally oxidized at a temperature of 250.degree. to 651.degree. C.
- 5. The method according to claim 1 wherein said at least one element comprises Si and Ge, and said alloy is internally oxidized at a temperature of 250.degree. to 840.degree. C.
- 6. A method of producing an electrical contact material comprising a silver eutectic alloy comprising Ag as the main component in which fine oxide particles are uniformly dispersed, said method comprising the steps of:
- (a) admixing with Ag at least one element selected from the group consisting of Si and Ge and at least one additional element selected from at least one of the following groups wherein:
- the first group consists of Au, Pt, Pd, Rh, Ru, Os and Ir, and
- the second group consists of Ti, V, Zr, Nb, Mo, Ta, W and Re, and the third group consists of Fe, Co, Ni and Cu;
- (b) melting said admixture of Ag and said elements to form an alloy;
- (c) quenching said alloy;
- (d) annealing said quenched alloy in a vacuum;
- (e) plastically working said annealed alloy; and
- (f) internally oxidizing said plastically worked alloy.
- 7. The method according to claim 6 wherein said at least one element is present in a concentration of 1 to 17 at. % based on the weight of the material.
- 8. The method according to claim 6 wherein said at least one element is present in a concentration of 1 to 17 at. % and said at least one additional element selected from said first group is present in a concentration of 1 to 10 at. % based on the weight of the material.
- 9. The method according to claim 6 wherein said at least one element is present in a concentration of 1 to 17 at. % and said at least one additional element selected from said second group is present in a concentration of 1 to 5 at. % based on the weight of the material.
- 10. The method according to claim 6 wherein said at least one element is present in a concentration of 1 to 17 at. % and said at least one additional element selected from said third group is present in a concentration of 1 to 5 at. % based on the weight of the material.
- 11. The method according to claim 6 wherein said at least one element is present in a concentration of 1 to 17 at. % and said at least one additional element selected from said first group is present in a concentration of 1 to 10 at. % and said at least one additional element selected from said second group is present in a concentration of 1 to 5 at. % based on the weight of the material.
- 12. The method according to claim 6 wherein said at least one element is present in a concentration of 1 to 17 at. % and said at least one additional element selected from said first group is present in a concentration of 1 to 10 at. % and said at least one additional element selected from said third group is present in a concentration of 1 to 5 at. % based on the weight of the material.
- 13. The method according to claim 6 wherein said at least one element comprises Si, and said alloy is internally oxidized at a temperature of 250.degree. to 840.degree. C.
- 14. The method according to claim 6 wherein said at least one element comprises Ge, and said alloy is internally oxidized at a temperature of 250.degree. to 651.degree. C.
- 15. The method according to claim 6 wherein said at least one element comprises Si and Ge, and said alloy is internally oxidized at a temperature of 250.degree. to 840.degree. C.
- 16. The method according to claim 1 wherein said melting step is performed at a temperature of 1,100.degree. to 1,200.degree. C.
- 17. The method according to claim 6 wherein said melting step is performed at a temperature of 1,100.degree. to 2,000.degree. C.
- 18. The method according to claim 1 wherein said annealing step is performed at a temperature of 300.degree. to 800.degree. C. for a period of time ranging from 20 to 60 minutes, and said plastically working step is performed at a temperature of 300.degree. to 600.degree. C.
- 19. The method according to claim 6 wherein said annealing step is performed at a temperature of 300.degree. to 800.degree. C. for a period of time ranging from 20 to 60 minutes, and said plastically working step is performed at a temperature of 300.degree. to 600.degree. C.
Parent Case Info
This is a division, of Application Ser. No. 47,104, filed June 11, 1979, U.S. Pat. No. 4,279,649.
US Referenced Citations (8)
Foreign Referenced Citations (6)
Number |
Date |
Country |
2639107 |
Mar 1978 |
DEX |
37-11401 |
Aug 1962 |
JPX |
52-20288 |
Feb 1977 |
JPX |
52-30217 |
Mar 1977 |
JPX |
52-148420 |
Dec 1977 |
JPX |
909349 |
Oct 1962 |
GBX |
Divisions (1)
|
Number |
Date |
Country |
Parent |
47104 |
Jun 1979 |
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