Claims
- 1. A material for placement between and in contact with spaced conductors to provide a non-linear resistance therebetween, said material comprising a matrix formed of a binder and only closely spaced conductive particles:
- (a) said closely spaced conductive particles being homogeneously distributed, said particles being in the submicron range to hundred micron range in size and spaced by said binder to provide electrical conduction by quantum-mechanical tunneling therebetween; and
- (b) said binder selected to provide the quantum-mechanical tunneling media between said conductive particles and predetermined resistance between said conductive particles in the absence of quantum-mechanical tunneling.
- 2. A material as set forth in claim 1, wherein said spacing of said particles is in the range of about 20 to 200 angstroms.
- 3. A material as set forth in claim 2, and further including fumed silicon dioxide.
- 4. A material as set forth in claim 1, and further including fumed silicon dioxide.
- 5. A device utilizing materials as set forth in claim 1, to provide nanosecond transient overvoltage protection to electronic circuitry.
- 6. A material as set forth in claim 1, and further including powdered semiconductors.
- 7. A material as set forth in claim 2, and further including powdered semiconductors.
Parent Case Info
This application is a continuation of application Ser. No. 07/273,020 now U.S. Pat. No. 4,992,333, filed Nov. 18, 1988.
US Referenced Citations (6)
Continuations (1)
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Number |
Date |
Country |
Parent |
273020 |
Nov 1988 |
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