Claims
- 1. A process for preparing a thermally-stable SnO.sub.2 -surfaced polyimide film wherein the electrical conductivity of the SnO.sub.2 surface is within the range of about 3.0.times.10.sup.-3 to about 1.times.10.sup.-2 ohms.sup.-1, which process comprises:
- preparing a polyamic acid solution by reacting a diamine and a dianhydride in a polar aprotic solvent;
- adding SnCl.sub.4 (DMSO).sub.2 to the polyamic acid solution to produce a homogeneous admixture;
- spreading the homogeneous admixture as a film on a rigid substrate; and
- thermally treating the film of the homogeneous admixture to imidize the polyamic acid to a polyimide and at the same time induce migration of the SnCl.sub.4 (DMSO).sub.2 to the surface of the film of the homogeneous admixture, where the SnCl.sub.4 (DMSO).sub.2 is converted to SnO.sub.2.
- 2. A process for preparing a thermally-stable SnO.sub.2 -surfaced polyimide film wherein the electrical conductivity of the SnO.sub.2 surface is within the range of about 3.0.times.10.sup.-3 to about 1.times.10.sup.-2 ohms.sup.-1, which process comprises:
- dissolving SnCl.sub.4 (DMSO).sub.2 in a polar aprotic solvent;
- preparing a polyamic acid solution by reacting a diamine and a dianhydride in the polar aprotic solvent containing the dissolved SnCl.sub.4 (DMSO).sub.2 ;
- spreading the polyamic acid solution as a film on a rigid substrate; and
- thermally treating the film of the polyamic acid solution to imidize the polyamic acid to a polyimide and at the same time induce migration of the SnCl.sub.4 (DMSO).sub.2 to the surface of the film of the polyamic acid solution where the SnCl.sub.4 (DMSO).sub.2 is converted to SnO.sub.2.
- 3. The process of claim 1, wherein the diamine is 4,4'-oxydianiline, and the dianhydride is pyromellitic dianhydride.
- 4. The process of claim 2, wherein the diamine is 4,4'-oxydianiline, and the dianhydride is pyromellitic dianhydride.
- 5. The process of claim 1, wherein the stoichiometric ratio of SnCl.sub.4 (DMSO).sub.2 to the polyamic acid repeating unit is between 0.5:4.00 and 0.75:4.00.
- 6. The process of claim 2, wherein the stoichiometric ratio of SnCl.sub.4 (DMSO).sub.2 to the polyamic acid repeating unit is between 0.5:4.00 and 0.75:4.00.
- 7. The process of claim 1, which additionally comprises the step of coating the SnO.sub.2 with a protective film.
- 8. The process of claim 2, which additionally comprises the step of coating the SnO.sub.2 with a protective film.
ORIGIN OF THE INVENTION
The invention described herein was jointly made by an employee of the United States Government and contract employees during the performance of work under NASA Contract NAS1-19000 and is subject to the provisions of Section 305 of the National Aeronautics and Space Act of 1958, as amended Public Law 85-568 (72 Stat. 435; 42 USC 2457), and during the performance of work under NASA Grant NAG-1-343. In accordance with 35 USC 202, the grantee elected not to retain title.
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Number |
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4895972 |
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|
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|
Non-Patent Literature Citations (1)
Entry |
Article "Surface-Semiconductor Polyimide Films Containing Tin Complexes" Macromolecules 1984, vol. 17, 1627-1632. |