Number | Date | Country | Kind |
---|---|---|---|
1-211301 | Aug 1989 | JP | |
1-242001 | Sep 1989 | JP |
This application is a continuation of application Ser. No. 07/942,028, filed Sep. 8, 1992 abandoned; which is a continuation of application Ser. No. 07/568,071, filed Aug. 16, 1990, now abandoned.
Number | Name | Date | Kind |
---|---|---|---|
4803529 | Masuoka | Feb 1989 | |
4949308 | Araki et al. | Aug 1990 | |
4996571 | Kume et al. | Feb 1991 | |
5033023 | Hsia et al. | Jul 1991 | |
5047981 | Gill et al. | Sep 1991 | |
5051953 | Kitazawa et al. | Sep 1991 | |
5065364 | Atwood et al. | Nov 1991 | |
5095461 | Miyakawa et al. | Mar 1992 | |
5097444 | Fong | Mar 1992 | |
5109361 | Yim et al. | Apr 1992 | |
5136546 | Fukuda et al. | Aug 1992 |
Number | Date | Country |
---|---|---|
0136771 | Apr 1985 | EP |
59-107489 | Jun 1984 | JP |
64-81253 | Mar 1989 | JP |
Entry |
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National Semiconductor Memory Data Book, Section 4, “Moseproms,”© 1976 National Semiconductor Corp., pp. 4-1 To 4-16.* |
H. Kume, et al, “A Flash Erase Eeprom Cell”, Proc. IEDM, Wash., DC; Dec. 1987; pp. 560-563. |
V. Kynett, et al, “An Insystem Reprogramable . . . Memory”, IEEE J. of SSC; vol. 23, #5; 10/88 pp. 1157-1162. |
G. Samachisa, et al, “A 128K Flash Eeprom . . . Tech.” ISSCC 87, 2/87 ; pp. 76-77. |
G. Verma, et al, “Reliability Performance of . . . Flash Mem.”, 1988 IEEE IRPS, Ch. 2508; pp. 158-166. |
Number | Date | Country | |
---|---|---|---|
Parent | 07/942028 | Sep 1992 | US |
Child | 08/379020 | US | |
Parent | 07/568071 | Aug 1990 | US |
Child | 07/942028 | US |