"A New Cell Structure for Sub-Quarter Micron High Density Flash Memory" (Yamauchi et al.), IEDM, 1995, pp. 267-270. |
"A Novel NOR Virtual-Ground Array Architecture For High Density Flash" (Yamauchi et al.), 1996 International Conference on Solid State Devices and Materials, pp. 269-271; 1996. |
"A 0.54.beta.m.sup.2 Self-Aligned, HSG Floating Gate Cell (SAHF Cell) for 256Mbit Flash Memories" (Shirai et al.), IEDM 1995, pp. 653-656; 1995. |
German Published Application No. 195 244 478.8 (Hofmann et al.), dated Jul. 5, 1995, electrically erasable read-only memory cell configuration. |