1986 American institure P Sep. 1986 U.S. T.E. Schlesinger.* |
Painter et al., “Two-Dimensional Photonic Band-Gap Defect Mode Laser,” Science 284, 1819 (1999). |
Zhou et al., “Electrically injected single-defect photonic bandgap surface-emitting laser at room temperature,” Electronics Letters 36(18), 1541 (2000). |
Chow et al., “Three-dimensional control of light in a two-dimensional photonic crystal slab,” Nature 407, 983 (2000). |
Kondow et al., “GaInNAs: A Novel Material for Long-Wavelength Semiconductor Lasers,” IEEE J. of Selected Topics in Quantum Electronics 3(3), 719 (1997). |
Zhou et al., “Characteristics of a Photonic Bandgap Single Defect Microcavity Electroluminescent Device,” IEEE J. of Quantum Electronics 37(9), 1153 (2001). |
Lee et al., “Photonic bandgap disk laser,” Electronics Letters 35(7), 569 (1999). |
Foresi et al., “Photonic-bandgap microcavities in optical waveguides,” Nature 390, 143 (1997). |
Ripin et al., “One-dimensional Photonic Bandgap Microcavities for Strong Optical Confinement in GaAs and GaAs/AlxOy Semiconductor Waveguides,” J. Lightwave Tech. 17(11), 2152 (1999). |
Lin et al., “Direct measurement of the quality factor in a two-dimensional photonic-crystal microcavity,” Optics Letters 26(23), 1903 (2001). |
Schlesinger et al., “Determination of the interdiffusion of Al and Ga in undoped (Al,Ga)As/GaAs quantum wells,” Appl. Phys. Lett. 49(9), 519 (1986). |
Deppe et al., “Stripe-geometry quantum well heterostructure AlxGax-4As-GaAs lasers defined by defect diffusion,” Appl. Phys. Lett. 49(9), 510 (1986). |