Electro-deposited passivation coatings for patterned media

Information

  • Patent Grant
  • 8980076
  • Patent Number
    8,980,076
  • Date Filed
    Friday, January 11, 2013
    11 years ago
  • Date Issued
    Tuesday, March 17, 2015
    9 years ago
Abstract
A method of fabricating a magnetic recording disk including providing a magnetic recording layer having a pattern of raised areas and recessed areas formed thereon and providing a mask layer on the raised areas of the magnetic recording layer. The method further including electrodepositing a first protection layer on the magnetic recording layer, removing the mask layer, and depositing a second protection layer above the first protection layer.
Description
TECHNICAL FIELD

Embodiments described herein relate to the field of patterned media, and, in particularly, to electro-deposited passivation of pattern media.


BACKGROUND

Patterned media poses unique challenges to the tribological properties of hard disks because typical fabrication processes can involve producing topography (e.g., grooves) in the magnetic media layers. The non-planar media surface can adversely affect a disk drive's performance in terms of both head flyability and corrosion. In conventional hard disk media, the head flies over a very smooth surface and the magnetic layers, which are composite metal films, are capped with a thin diamond-like carbon (DLC) film to protect against corrosion. In patterned media, a DLC film is also typically required to cap the magnetic layers, but the presence of topography in the magnetic layers can result in poor conformal coverage (e.g., groove sidewalls and corners) resulting in inadequate corrosion performance.


In conventional fabrication process for patterned media, the DLC film is applied to the pattern features of the discrete track recording (DTR) disk, also referred to as discrete track media (DTM). One type of DTM structure utilizes a pattern of concentric discrete zones for the recording medium. When data are written to the recoding medium, the discrete magnetic areas correspond to the data tracks. The substrate surface areas not containing the magnetic material isolate the data tracks from one another. The discrete magnetic zones (also known as hills, lands, elevations, etc.) are used for storing data and the non-magnetic zones (also known as troughs, valleys, grooves, etc.) provide inter-track isolation to reduce noise. The lands have a width less than the width of the recording head such that portions of the head extend over the troughs during operation. The lands are sufficiently close to the head to enable the writing of data in the magnetic layer. Therefore, with DTM, data tracks are defined both physically and magnetically


In conventional fabrication of DTM, the recessed (e.g., grooves) and non-recessed regions (e.g., lands) of the patterned area are coated at the same time using the same diamond-like carbon (DLC) deposition process. As a result, the coating of the recessed regions will be thinner and less uniform than the non-recessed regions because of shadowing effects and a larger surface area in the recessed regions. Consequently, the potential for corrosion in the recessed regions of the patterned media is greater than the non-recessed regions and likewise greater than standard non-patterned media.


One conventional DTM fabrication approach uses a physical vapor deposition (PVD) technique to coated the entire surface of patterned magnetic layer. Such an approach may involve multi-steps of depositing and etching back films to completely fill recessed regions of the patterned media and achieve a flyable surface.


Another conventional DTM fabrication method described in US 2008/0187779 utilizes atomic layer deposition (ALD) to deposit a DLC film over the entire surface of the patterned magnetic recording layer, after installing a resin mold mask on the surface of magnetic recording layer. The ALD fills not only the grooves but also covers the resin mold mask on the lands of the magnetic recording layer. Then, the resin mold mask is removed together with the ALD protective layer above the lands of the magnetic recording layer.





BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments are illustrated by way of example, and not limitation, in the figures of the accompanying drawings in which:



FIG. 1 is a conceptual illustration of the manufacturing method and resulting disk structure of a patterned magnetic recording disk having an electrodeposited protection layer, according to embodiments of the present invention.



FIG. 2 illustrates one embodiment of electroplater according to one embodiment of the present invention.



FIG. 3 illustrates a method of manufacturing a patterned magnetic recording disk having an electrodeposited protection layer, according to alternative embodiments of the present invention.





DETAILED DESCRIPTION

Embodiments of the apparatus and methods are described herein with reference to figures. However, particular embodiments may be practiced without one or more of these specific details, or in combination with other known methods, materials, and apparatuses. In the following description, numerous specific details are set forth, such as specific materials, dimensions and processes parameters etc. to provide a thorough understanding. In other instances, well-known manufacturing processes and equipment have not been described in particular detail to avoid unnecessarily obscuring the claimed subject matter. Reference throughout this specification to “an embodiment” means that a particular feature, structure, material, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. Thus, the appearances of the phrase “in an embodiment” in various places throughout this specification are not necessarily referring to the same embodiment. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments.


Embodiments of a method of electro-depositing a coating to reside in the recessed areas (grooves) of a patterned magnetic film are described. Electro-deposition of the coating in these topographical grooves may be performed in order to passivate the surfaces of these patterned grooves and prevent corrosion. In one particular embodiment, such a coating layer is only electro-deposited in the patterned grooves so that no additional spacing loss is added to the top magnetic surface. In one embodiment, depending on the coating layer thickness, the effect on head flyability can also be mitigated by either partially or completely filling the grooves to planarize the media. Improved corrosion performance as well as flyability of the patterned media may result from embodiments of the invention discussed herein.


In one embodiment, the electro-deposition process is performed after the features have been etched by some means into the media layers but before a mask layer is stripped so that only the exposed conductive surfaces are the recessed features. Consequently, material is only deposited in the recessed areas (i.e., grooves) of the patterned magnetic layers(s) during the electro-deposition process. After depositing the first coating in the etched features, the masking layer is then stripped and second protection layer (e.g., DLC film) can be deposited over the entire surface of the patterned magnetic layer(s). As a result, the recessed regions of the pattern will have two layers of protection (i.e., electro-deposited film and vacuum deposited DLC) while the non-recessed regions (i.e., lands) of the pattern will have only the second protection layer (e.g., the DLC film).


As one of ordinary skill in the art will appreciate, different deposition methods may provide distinct material properties of the deposited layer. For example, one of ordinary skill in the art would understand CVD carbon to have material properties that are distinct from PVD carbon. Thus, a CVD carbon layer would not be considered structurally equivalent to a PVD carbon layer. As another example, a DLC film formed by a CVD method is denser and harder than a DLC film formed by a sputtering method. ALD is similar in chemistry to CVD, except that the ALD reaction breaks the CVD reaction into two half-reactions, keeping precursor materials separate during the reaction. A layer produced by electro deposition has different material properties than a layer of produced by ALD. As such, embodiments of the deposition method may be discussed herein at times in reference to the physical properties of a layer produced by the particular deposition method as well as a description of the deposition process. In one embodiment, the electrodeposited layer may have a crystalline structure. Alternatively, the electrodeposited layer may have an amorphous structure.



FIG. 1 is a conceptual illustration of the manufacturing method 100 and resulting disk 205 structure of a patterned magnetic recording disk, according to embodiments of the present invention. Embodiments of the method of the present invention begin after patterning of the magnetic layer(s) of a DTM disk. The patterning may be accomplished by any one of several means (e.g., imprint lithography, e-beam lithography, ion beam etching, reactive ion etching, sputter etching, etc.) that are well known in the art; accordingly, a detailed discussion is not provided. After patterning of the magnetic layer(s) 112, a mask (e.g., resist) layer 111 may remain above the lands of the pattern. In embodiments where a mask layer does not remain after patterning of layer(s), the method 100 includes the deposition and etching of a mask layer to form openings above the grooves 113 of the magnetic layer(s) as illustrated in the FIG. 1. The deposition and etching of a mask layer is known in the art; accordingly, a detailed discussion is not provided herein.


After the patterned magnetic layer(s) 112 and mask layer 111 have been provided, operation 110, the method 100 then proceeds with electro-depositing a protection layer 123 within the grooves 113 of the patterned magnetic layer(s) 112, operation 120. Next, mask layer 111 is removed, operation 130, followed by the depositing of a second protection layer 145 over both the grooves 113 and lands 114 of the pattered magnetic layer(s) 112, step 140. Further details of each of the operations of FIG. 1 are provided below.



FIG. 2 illustrates one embodiment of electroplater 200 that may be used in the electrodeposition operation 120 according to one embodiment of the present invention. Electroplater 200 includes a power supply 210 coupled to a disk carrier 220 and a plating tank 230, containing a plating bath 235, to provide an electric current flow 211 in order to electroplate the first protection layer on the patterned magnetic recording layer. Contact pins 225 are used to provide electrical contact to the disk 205. In this particular embodiment, disk 205 is held in the tank upside down by the disk carrier 220.


In the electro-deposition process, the disk 205 as a work piece is made into either an anode or a cathode depending on the material to be deposited. A wide variety of materials can be electrodeposited into the recessed areas of the magnetic recording pattern including both metals and insulators. The materials which can be electro-deposited in this fashion include, for example, metals such as Au or silicates such as sodium silicate (Na2SiO3), potassium silicate (K2SiO3). In one embodiment, the deposited film may be a cross-linked silicate (silica) film free of sodium or potassium. In the case of sodium silicate, the electro-deposited film can then be converted to silica by baking the coating after deposition, as illustrated by operation 120 in FIG. 1.


In alternative embodiments, other metallic materials such as aluminum (Al), gold (Au), chromium (Cr), ruthenium (Ru), platinum (Pt), rhodium (Rh) and Copper (Cu) may be used. In general, metals are not magnetically sensitive and provide good adhesion, corrosion resistance and mechanical strength can also be employed. In yet other embodiments, aluminates can also be used similarly as silicate to be electro chemically deposited to the recessed areas 113. It should be noted that alloys can also be employed for formation of the first protection layer 123. In addition, multiple materials can also be electro-deposited in sequence to obtain desired adhesion, corrosion resistance, and mechanical properties.


When metallic materials are to be deposited into the grooves 113, the disk 205 is made a cathode and the tank electrode 240 is made an anode. When silicates or aluminates are to be used, the disk 205 is made an anode and the tank electrode 240 is made a cathode. In one embodiment, the electro deposition is carried out in a DC mode. In alternative embodiments, other plating modes may be used, for example, a positively pulsed mode, or a reversely pulsed mode (positive and negative). It should be noted that other types and configurations of electroplaters may be used in alternative embodiments of the present invention. Electroplating equipment is known in the art; accordingly, a further discussion is not provided herein. In one embodiment, the electrodeposition operation may be performed using electroless plating techniques.


The thickness of the first protection layer 123 can be controlled so that the groove 113 depth can be controlled to render the disk good flyability as well as good corrosion resistance. In the case of the metal coatings, relatively thick coatings can be achieved to even planarize the patterned features. In the case of silicates or aluminates, the coating thickness is self-limiting because the coating becomes non-conductive after a few nm and the deposition process stops.


Parameters such as electroplating bath composition, temperature, pH, voltage, pulse time and frequency (if pulsed), deposition time, etc all should be controlled to obtain optimum film properties. In order to limit the deposited film into grooves, the resist on the land area is non-conductive according to one embodiment. This can be done through controlling the resist thickness or selecting resist of high electrical resistance.



FIG. 3 illustrates a method 300 of manufacturing a patterned magnetic recording disk having an electrodeposited protection layer, according to alternative embodiments of the present invention. In one embodiment, one or more rinse operations, operation 125, (e.g., with water) may follow the electro-deposition operation 120 to clean the disk 205 free of possible loose deposits in the electrolytes. In one embodiment, an annealing operation 126 may be performed before the final stripping of mask layer in operation 130 to improve on the adhesion and mechanical properties of the electro deposited films. Annealing should not be too severe to hinder the final resist stripping operation. Rinse and annealing operations are known in the art; accordingly, detailed discussions of such operations are not provided.


Referring to both FIGS. 1 and 3, in operation 140, another, second protective film 145 may be deposited over the electro-deposited layer 123. In one embodiment, such additional protective layer 145 is vacuum deposited DLC film. In such vacuum deposited embodiments, the DLC film may be deposited with processes such as, but not limited to, ion beam deposition (IBD), physical vapor deposition (PVD), or chemical vapor deposition (CVD), such as low pressure (LP) CVD or plasma enhanced (PE) CVD. In a particular embodiments, the DLC film may be bi-layer formed. In alternative embodiments, other materials may be used for the second protection layer 145, for example, a nitride film, an oxide film such as SiO2 film, etc.


Embodiments of the methods described above may be used to fabricate a DTR perpendicular magnetic recording (PMR) disk having a soft magnetic film disposed above a substrate. The soft magnetic film may be composed of a single soft magnetic underlayer (SUL) or multiple soft magnetic underlayers having interlayer materials, such as ruthenium (Ru), disposed there between. In particular embodiments, both sides of the substrate may be processed, in either simultaneous or consecutive fashion, to form disks with double sided DTR patterns.


The terms “over,” “under,” “between,” and “on” as used herein refer to a relative position of one layer with respect to other layers. As such, for example, one layer deposited or disposed over or under another layer may be directly in contact with the other layer or may have one or more intervening layers. Moreover, one layer deposited or disposed between layers may be directly in contact with the layers or may have one or more intervening layers. In contrast, a first layer “on” a second layer is in contact with that second layer. Additionally, the relative position of one layer with respect to other layers is provided assuming the initial workpiece is a starting substrate and the subsequent processing deposits, modifies and removes films from the substrate without consideration of the absolute orientation of the substrate. Thus, a film that is deposited on both sides of a substrate is “over” both sides of the substrate.


Although these embodiments have been described in language specific to structural features and methodological acts, it is to be understood that the invention defined in the appended claims is not necessarily limited to the specific features or acts described in particular embodiments. The specific features and acts disclosed are to be understood as particularly graceful implementations of the claimed invention in an effort to illustrate rather than limit the present invention.

Claims
  • 1. A method of fabricating a magnetic recording disk, comprising: providing a magnetic recording layer having a pattern of raised magnetic areas formed directly on a magnetic portion of the magnetic recording layer, wherein recessed areas are present between the raised magnetic areas;providing a mask layer on the raised magnetic areas of the magnetic recording layer;electrodepositing a first protection layer only in recessed areas of the magnetic recording layer;removing the mask layer; anddepositing a second protection layer above the first protection layer.
  • 2. The method of claim 1, wherein electrodepositing comprises electroplating.
  • 3. The method of claim 1, the first protection layer comprises a metal.
  • 4. The method of claim 1, wherein the first protection layer comprises aluminum.
  • 5. The method of claim 1, wherein the first protection layer comprises a silicate.
  • 6. The method of claim 1, wherein the first protection layer comprises an insulator.
  • 7. The method of claim 6, further comprising baking the first protection layer after electrodepositing and before depositing the second protection layer.
  • 8. The method of claim 1, where the first protection layer comprises an aluminate.
  • 9. The method of claim 1, wherein the first protection layer comprises a material selected from a group consisting of aluminum, gold, copper, chromium, ruthenium, platinum and rhodium.
  • 10. The method of claim 1, wherein after electroplating the method further comprises: rinsing the first protection layer; andannealing the first protection layer before removing the mask layer.
  • 11. The method of claim 10, wherein the masking layer comprises a non-conductive material.
  • 12. The method of claim 1, wherein the first protection layer has a thickness less than 1 micron.
  • 13. The method of claim 1, further comprising electrodepositing one or more additional films on the first protection layer before depositing the second protection layer.
RELATED APPLICATION

This application is a divisional of U.S. patent application Ser. No. 12/472,288, filed May 26, 2009, which is hereby incorporated by reference in its entirety.

US Referenced Citations (349)
Number Name Date Kind
3969195 Dotzer et al. Jul 1976 A
4238385 Okado et al. Dec 1980 A
4420365 Lehrer Dec 1983 A
4482418 Rigby Nov 1984 A
4935278 Krounbi et al. Jun 1990 A
5700523 Petrole et al. Dec 1997 A
5723033 Weiss Mar 1998 A
6013161 Chen et al. Jan 2000 A
6063248 Bourez et al. May 2000 A
6068891 O'Dell et al. May 2000 A
6086730 Liu et al. Jul 2000 A
6099981 Nishimori Aug 2000 A
6103404 Ross et al. Aug 2000 A
6117499 Wong et al. Sep 2000 A
6136403 Prabhakara et al. Oct 2000 A
6143375 Ross et al. Nov 2000 A
6145849 Bae et al. Nov 2000 A
6146737 Malhotra et al. Nov 2000 A
6149696 Jia Nov 2000 A
6150015 Bertero et al. Nov 2000 A
6156404 Ross et al. Dec 2000 A
6159076 Sun et al. Dec 2000 A
6164118 Suzuki et al. Dec 2000 A
6200441 Gornicki et al. Mar 2001 B1
6204995 Hokkyo et al. Mar 2001 B1
6206765 Sanders et al. Mar 2001 B1
6210819 Lal et al. Apr 2001 B1
6216709 Fung et al. Apr 2001 B1
6221119 Homola Apr 2001 B1
6248395 Homola et al. Jun 2001 B1
6261681 Suekane et al. Jul 2001 B1
6270885 Hokkyo et al. Aug 2001 B1
6274063 Li et al. Aug 2001 B1
6283838 Blake et al. Sep 2001 B1
6287429 Moroishi et al. Sep 2001 B1
6290573 Suzuki Sep 2001 B1
6299947 Suzuki et al. Oct 2001 B1
6303217 Malhotra et al. Oct 2001 B1
6309765 Suekane et al. Oct 2001 B1
6358636 Yang et al. Mar 2002 B1
6362452 Suzuki et al. Mar 2002 B1
6363599 Bajorek Apr 2002 B1
6365012 Sato et al. Apr 2002 B1
6381090 Suzuki et al. Apr 2002 B1
6381092 Suzuki Apr 2002 B1
6387483 Hokkyo et al. May 2002 B1
6391213 Homola May 2002 B1
6395349 Salamon May 2002 B1
6403919 Salamon Jun 2002 B1
6408677 Suzuki Jun 2002 B1
6426157 Hokkyo et al. Jul 2002 B1
6429984 Alex Aug 2002 B1
6482330 Bajorek Nov 2002 B1
6482505 Bertero et al. Nov 2002 B1
6500567 Bertero et al. Dec 2002 B1
6528124 Nguyen Mar 2003 B1
6548821 Treves et al. Apr 2003 B1
6552871 Suzuki et al. Apr 2003 B2
6565719 Lairson et al. May 2003 B1
6566674 Treves et al. May 2003 B1
6571806 Rosano et al. Jun 2003 B2
6628466 Alex Sep 2003 B2
6664503 Hsieh et al. Dec 2003 B1
6670055 Tomiyasu et al. Dec 2003 B2
6680079 Stirniman et al. Jan 2004 B1
6682807 Lairson et al. Jan 2004 B2
6683754 Suzuki et al. Jan 2004 B2
6730420 Bertero et al. May 2004 B1
6743528 Suekane et al. Jun 2004 B2
6759138 Tomiyasu et al. Jul 2004 B2
6778353 Harper Aug 2004 B1
6795274 Hsieh et al. Sep 2004 B1
6821627 Stirniman et al. Nov 2004 B2
6855232 Jairson et al. Feb 2005 B2
6857937 Bajorek Feb 2005 B2
6893748 Bertero et al. May 2005 B2
6899959 Bertero et al. May 2005 B2
6916558 Umezawa et al. Jul 2005 B2
6939120 Harper Sep 2005 B1
6946191 Morikawa et al. Sep 2005 B2
6967798 Homola et al. Nov 2005 B2
6972135 Homola Dec 2005 B2
7004827 Suzuki et al. Feb 2006 B1
7006323 Suzuki Feb 2006 B1
7016154 Nishihira Mar 2006 B2
7019924 McNeil et al. Mar 2006 B2
7045215 Shimokawa May 2006 B2
7070870 Bertero et al. Jul 2006 B2
7090934 Hokkyo et al. Aug 2006 B2
7099112 Harper Aug 2006 B1
7105241 Shimokawa et al. Sep 2006 B2
7112377 Itoh et al. Sep 2006 B2
7119990 Bajorek et al. Oct 2006 B2
7147790 Wachenschwanz et al. Dec 2006 B2
7150844 Deeman et al. Dec 2006 B2
7161753 Wachenschwanz et al. Jan 2007 B2
7166319 Ishiyama Jan 2007 B2
7166374 Suekane et al. Jan 2007 B2
7169487 Kawai et al. Jan 2007 B2
7174775 Ishiyama Feb 2007 B2
7179549 Malhotra et al. Feb 2007 B2
7184139 Treves et al. Feb 2007 B2
7196860 Alex Mar 2007 B2
7199977 Suzuki et al. Apr 2007 B2
7208236 Morikawa et al. Apr 2007 B2
7220500 Tomiyasu et al. May 2007 B1
7229266 Harper Jun 2007 B2
7239970 Treves et al. Jul 2007 B2
7252897 Shimokawa et al. Aug 2007 B2
7277254 Shimokawa et al. Oct 2007 B2
7281920 Homola et al. Oct 2007 B2
7292329 Treves et al. Nov 2007 B2
7300595 Suwa et al. Nov 2007 B2
7301726 Suzuki Nov 2007 B1
7302148 Treves et al. Nov 2007 B2
7305119 Treves et al. Dec 2007 B2
7314404 Singh et al. Jan 2008 B2
7314833 Kamata et al. Jan 2008 B2
7320584 Harper et al. Jan 2008 B1
7323258 Kamata et al. Jan 2008 B2
7329114 Harper et al. Feb 2008 B2
7341825 Bandic et al. Mar 2008 B2
7351484 Wang et al. Apr 2008 B2
7375362 Treves et al. May 2008 B2
7378029 Hattori et al. May 2008 B2
7385785 Hattori et al. Jun 2008 B2
7420886 Tomiyasu et al. Sep 2008 B2
7425719 Treves et al. Sep 2008 B2
7471484 Wachenschwanz et al. Dec 2008 B2
7498062 Calcaterra et al. Mar 2009 B2
7531485 Hara et al. May 2009 B2
7537846 Ishiyama et al. May 2009 B2
7549209 Wachenschwanz et al. Jun 2009 B2
7569490 Staud Aug 2009 B2
7572528 Yamamoto et al. Aug 2009 B2
7597792 Homola et al. Oct 2009 B2
7597973 Ishiyama Oct 2009 B2
7608193 Wachenschwanz et al. Oct 2009 B2
7632087 Homola Dec 2009 B2
7656615 Wachenschwanz et al. Feb 2010 B2
7682546 Harper Mar 2010 B2
7684152 Suzuki et al. Mar 2010 B2
7686606 Harper et al. Mar 2010 B2
7686991 Harper Mar 2010 B2
7695833 Ishiyama Apr 2010 B2
7722968 Ishiyama May 2010 B2
7733605 Suzuki et al. Jun 2010 B2
7736768 Ishiyama Jun 2010 B2
7755861 Li et al. Jul 2010 B1
7758732 Calcaterra et al. Jul 2010 B1
7833639 Sonobe et al. Nov 2010 B2
7833641 Tomiyasu et al. Nov 2010 B2
7910159 Jung Mar 2011 B2
7911736 Bajorek Mar 2011 B2
7924519 Lambert Apr 2011 B2
7944165 O'Dell May 2011 B1
7944643 Jiang et al. May 2011 B1
7955723 Umezawa et al. Jun 2011 B2
7983003 Sonobe et al. Jul 2011 B2
7993497 Moroishi et al. Aug 2011 B2
7993765 Kim et al. Aug 2011 B2
7998912 Chen et al. Aug 2011 B2
8002901 Chen et al. Aug 2011 B1
8003237 Sonobe et al. Aug 2011 B2
8012920 Shimokawa Sep 2011 B2
8038863 Homola Oct 2011 B2
8057926 Ayama et al. Nov 2011 B2
8062778 Suzuki et al. Nov 2011 B2
8064156 Suzuki et al. Nov 2011 B1
8076013 Sonobe et al. Dec 2011 B2
8092931 Ishiyama et al. Jan 2012 B2
8100685 Harper et al. Jan 2012 B1
8101054 Chen et al. Jan 2012 B2
8125723 Nichols et al. Feb 2012 B1
8125724 Nichols et al. Feb 2012 B1
8137517 Bourez Mar 2012 B1
8142916 Umezawa et al. Mar 2012 B2
8163093 Chen et al. Apr 2012 B1
8171949 Lund et al. May 2012 B1
8173282 Sun et al. May 2012 B1
8178480 Hamakubo et al. May 2012 B2
8206789 Suzuki Jun 2012 B2
8218260 Iamratanakul et al. Jul 2012 B2
8247095 Champion et al. Aug 2012 B2
8257783 Suzuki et al. Sep 2012 B2
8298609 Liew et al. Oct 2012 B1
8298689 Sonobe et al. Oct 2012 B2
8309239 Umezawa et al. Nov 2012 B2
8316668 Chan et al. Nov 2012 B1
8331056 O'Dell Dec 2012 B2
8354618 Chen et al. Jan 2013 B1
8367228 Sonobe et al. Feb 2013 B2
8383209 Ayama Feb 2013 B2
8394243 Jung et al. Mar 2013 B1
8397751 Chan et al. Mar 2013 B1
8399809 Bourez Mar 2013 B1
8402638 Treves et al. Mar 2013 B1
8404056 Chen et al. Mar 2013 B1
8404369 Ruffini et al. Mar 2013 B2
8404370 Sato et al. Mar 2013 B2
8406918 Tan et al. Mar 2013 B2
8414966 Yasumori et al. Apr 2013 B2
8425975 Ishiyama Apr 2013 B2
8431257 Kim et al. Apr 2013 B2
8431258 Onoue et al. Apr 2013 B2
8453315 Kajiwara et al. Jun 2013 B2
8488276 Jung et al. Jul 2013 B1
8491800 Dorsey Jul 2013 B1
8492009 Homola et al. Jul 2013 B1
8492011 Itoh et al. Jul 2013 B2
8496466 Treves et al. Jul 2013 B1
8517364 Crumley et al. Aug 2013 B1
8517657 Chen et al. Aug 2013 B2
8524052 Tan et al. Sep 2013 B1
8530065 Chernyshov et al. Sep 2013 B1
8546000 Umezawa Oct 2013 B2
8551253 Na'im et al. Oct 2013 B2
8551627 Shimada et al. Oct 2013 B2
8556566 Suzuki et al. Oct 2013 B1
8559131 Masuda et al. Oct 2013 B2
8562748 Chen et al. Oct 2013 B1
8565050 Bertero et al. Oct 2013 B1
8570844 Yuan et al. Oct 2013 B1
8580410 Onoue Nov 2013 B2
8584687 Chen et al. Nov 2013 B1
8591709 Lim et al. Nov 2013 B1
8592061 Onoue et al. Nov 2013 B2
8596287 Chen et al. Dec 2013 B1
8597723 Jung et al. Dec 2013 B1
8603649 Onoue Dec 2013 B2
8603650 Sonobe et al. Dec 2013 B2
8605388 Yasumori et al. Dec 2013 B2
8605555 Chernyshov et al. Dec 2013 B1
8608147 Yap et al. Dec 2013 B1
8609263 Chernyshov et al. Dec 2013 B1
8619381 Moser et al. Dec 2013 B2
8623528 Umezawa et al. Jan 2014 B2
8623529 Suzuki Jan 2014 B2
8634155 Yasumori et al. Jan 2014 B2
8658003 Bourez Feb 2014 B1
8658292 Mallary et al. Feb 2014 B1
8665541 Saito Mar 2014 B2
8668953 Buechel-Rimmel Mar 2014 B1
8674327 Poon et al. Mar 2014 B1
8685214 Moh et al. Apr 2014 B1
20010055700 Dykes et al. Dec 2001 A1
20020030949 Itoh et al. Mar 2002 A1
20020060883 Suzuki May 2002 A1
20030022024 Wachenschwanz Jan 2003 A1
20040022387 Weikle Feb 2004 A1
20040132301 Harper et al. Jul 2004 A1
20040202793 Harper et al. Oct 2004 A1
20040202865 Homola et al. Oct 2004 A1
20040209123 Bajorek et al. Oct 2004 A1
20040209470 Bajorek Oct 2004 A1
20050036223 Wachenschwanz et al. Feb 2005 A1
20050086795 Suwa et al. Apr 2005 A1
20050120545 Wachenschwanz et al. Jun 2005 A1
20050142990 Homola Jun 2005 A1
20050150862 Harper et al. Jul 2005 A1
20050151282 Harper et al. Jul 2005 A1
20050151283 Bajorek et al. Jul 2005 A1
20050151300 Harper et al. Jul 2005 A1
20050155554 Saito Jul 2005 A1
20050167867 Bajorek et al. Aug 2005 A1
20050211566 Tomita et al. Sep 2005 A1
20050263401 Olsen et al. Dec 2005 A1
20050271819 Wago et al. Dec 2005 A1
20060063336 Triyoso et al. Mar 2006 A1
20060093863 Tsuchiya et al. May 2006 A1
20060147758 Jung et al. Jul 2006 A1
20060181697 Treves et al. Aug 2006 A1
20060207890 Staud Sep 2006 A1
20060222897 Kamata Oct 2006 A1
20060231409 Sakamoto et al. Oct 2006 A1
20070026265 Sakurai et al. Feb 2007 A1
20070054153 Dai et al. Mar 2007 A1
20070070549 Suzuki et al. Mar 2007 A1
20070245909 Homola Oct 2007 A1
20080026252 Sonoda et al. Jan 2008 A1
20080075845 Sonobe et al. Mar 2008 A1
20080085362 Yen et al. Apr 2008 A1
20080093760 Harper et al. Apr 2008 A1
20080187779 Horiguchi Aug 2008 A1
20090117408 Umezawa et al. May 2009 A1
20090136784 Suzuki et al. May 2009 A1
20090162704 Kimura et al. Jun 2009 A1
20090169922 Ishiyama Jul 2009 A1
20090191331 Umezawa et al. Jul 2009 A1
20090202866 Kim et al. Aug 2009 A1
20090311557 Onoue et al. Dec 2009 A1
20100059476 Yamamoto et al. Mar 2010 A1
20100067144 Tagami Mar 2010 A1
20100103559 Sato Apr 2010 A1
20100143752 Ishibashi et al. Jun 2010 A1
20100190035 Sonobe et al. Jul 2010 A1
20100196619 Ishiyama Aug 2010 A1
20100196740 Ayama et al. Aug 2010 A1
20100209601 Shimokawa et al. Aug 2010 A1
20100215992 Horikawa et al. Aug 2010 A1
20100232065 Suzuki et al. Sep 2010 A1
20100247965 Onoue Sep 2010 A1
20100261039 Itoh et al. Oct 2010 A1
20100279151 Sakamoto et al. Nov 2010 A1
20100300884 Homola et al. Dec 2010 A1
20100304186 Shimokawa Dec 2010 A1
20110001423 Natori et al. Jan 2011 A1
20110097603 Onoue Apr 2011 A1
20110097604 Onoue Apr 2011 A1
20110171495 Tachibana et al. Jul 2011 A1
20110206947 Tachibana et al. Aug 2011 A1
20110212346 Onoue et al. Sep 2011 A1
20110223446 Onoue et al. Sep 2011 A1
20110244119 Umezawa et al. Oct 2011 A1
20110299194 Aniya et al. Dec 2011 A1
20110311841 Saito et al. Dec 2011 A1
20120069466 Okamoto et al. Mar 2012 A1
20120070692 Sato et al. Mar 2012 A1
20120077060 Ozawa Mar 2012 A1
20120127599 Shimokawa et al. May 2012 A1
20120127601 Suzuki et al. May 2012 A1
20120129009 Sato et al. May 2012 A1
20120140359 Tachibana Jun 2012 A1
20120141833 Umezawa et al. Jun 2012 A1
20120141835 Sakamoto Jun 2012 A1
20120148875 Hamakubo et al. Jun 2012 A1
20120156523 Seki et al. Jun 2012 A1
20120164488 Shin et al. Jun 2012 A1
20120170152 Sonobe et al. Jul 2012 A1
20120171369 Koike et al. Jul 2012 A1
20120175243 Fukuura et al. Jul 2012 A1
20120189872 Umezawa et al. Jul 2012 A1
20120196049 Azuma et al. Aug 2012 A1
20120207919 Sakamoto et al. Aug 2012 A1
20120225217 Itoh et al. Sep 2012 A1
20120251842 Yuan et al. Oct 2012 A1
20120251846 Desai et al. Oct 2012 A1
20120276417 Shimokawa et al. Nov 2012 A1
20120308722 Suzuki et al. Dec 2012 A1
20130040167 Alagarsamy et al. Feb 2013 A1
20130071694 Srinivasan et al. Mar 2013 A1
20130165029 Sun et al. Jun 2013 A1
20130175252 Bourez Jul 2013 A1
20130216865 Yasumori et al. Aug 2013 A1
20130230647 Onoue et al. Sep 2013 A1
20130314815 Yuan et al. Nov 2013 A1
20140011054 Suzuki Jan 2014 A1
20140044992 Onoue Feb 2014 A1
20140050843 Yi et al. Feb 2014 A1
Foreign Referenced Citations (2)
Number Date Country
2008062772 May 2008 WO
2009101983 Aug 2009 WO
Non-Patent Literature Citations (7)
Entry
Myasoedov, V.E., et al. “Manufacture of silicate enamel coatings by pulsed electrodeposition” Glass and Ceramics, vol. 51, Nos. 3-4, 1994.
Wang, et al. (Oct. 2001). “Atomic Layer Deposition”, Abstract, Solid-State and Intergrated-Circuit Technology, vol. 1, pp. 364.
Kikitsu, et al. (Sep. 2007). “Recent Progress of Patterned Media”, IEEE Transactions on Magnetics, 43(9) 3685-3688.
Andrew M. Homola et al., U.S. Appl. No. 12/882,888, filed Sep. 15, 2010, 17 pages.
Andrew M. Homola, et al., U.S. Appl. No. 12/472,288, filed May 26, 2009, 14 pages.
Office Action dated Feb. 28, 2012 from U.S. Appl. No. 12/472,288, 18 pages.
Final Office Action dated Jul. 13, 2012 from U.S. Appl. No. 12/472,288, 13 pages.
Divisions (1)
Number Date Country
Parent 12472288 May 2009 US
Child 13740010 US