Electro-optical device and electronic apparatus

Information

  • Patent Application
  • 20070215969
  • Publication Number
    20070215969
  • Date Filed
    February 21, 2007
    17 years ago
  • Date Published
    September 20, 2007
    17 years ago
Abstract
An electro-optical device includes an insulating substrate, a switching element, at least one PIN diode, and at least one reflector. The switching element includes a first polysilicon semiconductor layer formed on the insulating substrate, and a gate electrode formed between the insulating substrate and the first semiconductor layer. Each of the at least one PIN diode includes a second polysilicon semiconductor layer formed on the insulating substrate. The at least one reflector is formed in the same layer as the gate electrode and opposite the second semiconductor layer or layers of the at least one PIN diode.
Description

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described with reference to the accompanying drawings, wherein like numbers reference like elements.



FIG. 1 is a sectional view of an electro-optical device according to a first exemplary embodiment of the invention.



FIG. 2 is a plan view of the electro-optical device according to the first exemplary embodiment.



FIG. 3 schematically illustrates the sectional structure of a liquid crystal panel employed as the electro-optical device of FIG. 2, the liquid crystal panel being contained in a case.



FIG. 4 schematically illustrates the two-dimensional pattern of a display panel employed as the electro-optical device of FIG. 2.



FIG. 5 is an equivalent circuit diagram showing the connection status of the PIN diodes 29 and 30.



FIG. 6 is a perspective view schematically showing the electro-optical device according to a second exemplary embodiment of the invention.



FIG. 7 is a perspective view showing an example of an electronic apparatus.


Claims
  • 1. An electro-optical device comprising: an insulating substrate;a switching element including a first polysilicon semiconductor layer formed on the insulating substrate, and a gate electrode formed between the insulating substrate and the first semiconductor layer;at least one PIN diode each including a second polysilicon semiconductor layer formed on the insulating substrate; andat least one reflector formed in the same layer as the gate electrode and opposite the second semiconductor layer or layers of the at least one PIN diode.
  • 2. The electro-optical device according to claim 1, wherein each of the at least one reflector is wider than the second semiconductor layer of the corresponding PIN diode so as to face the entire region of the second semiconductor layer of the corresponding PIN diode.
  • 3. The electro-optical device according to claim 1, wherein the at least one PIN diode includes a plurality of PIN diodes arranged on the insulating substrate, and the at least one reflector includes a plurality of reflectors each provided opposite the second semiconductor layer of the corresponding PIN diode.
  • 4. The electro-optical device according to claim 1, wherein each of the at least one reflector is connected to a predetermined fixed potential point.
  • 5. The electro-optical device according to claim 4, wherein the predetermined fixed potential point to which each of the at least one reflector is connected is the anode or the cathode of the corresponding PIN diode.
  • 6. The electro-optical device according to claim 1, further comprising an illuminating unit that irradiates the insulating substrate with illuminating light, and a shielding plate for blocking the light from the illuminating unit from being incident on the at least one PIN diode.
  • 7. An electronic apparatus comprising the electro-optical device according to claim 1.
Priority Claims (1)
Number Date Country Kind
2006-054425 Mar 2006 JP national