The present invention relates generally to electro-optics, and more particularly to an electro-optical device utilizing an array of plasmonic field-effect transistors.
Electro-optics is a branch of electrical engineering and material physics involving components, devices (e.g., lasers, light emitting diodes, light modulators, etc.) and systems which operate by the propagation and interaction of light with various tailored materials. Specifically, electro-optics concerns the interaction between the electromagnetic (optical) and the electrical (electronic) states of materials.
Electro-optical devices are becoming part of day-to-day life in wearable technology and biosensors that integrate with smartphones and watches to measure biometrics. However, such electro-optical devices currently use power inefficiently and require complicated fabrication processes to be manufactured. Furthermore, the functionality of these electro-optical devices is limited.
In one embodiment of the present invention, an electro-optical device comprises an electro-optical substrate. The electro-optical device further comprises one or more arrays of plasmonic unit cells forming a plasmonic metasurface fabricated on the electro-optical substrate, where each of the plasmonic unit cells mimics a field-effect transistor.
In another embodiment of the present invention, a method for detecting biomolecules comprises detecting a change in physical properties of a thermochromic substrate based on a change in temperature of the thermochromic substrate which is based on a change in an amount of optical absorption due to a presence of a biomolecule with an absorption fingerprint that matches a resonance frequency of an array of plasmonic unit cells. The method further comprises detecting a presence of a biomolecule in response to detecting the change in the physical properties of the thermochromic substrate.
The foregoing has outlined rather generally the features and technical advantages of one or more embodiments of the present invention in order that the detailed description of the present invention that follows may be better understood. Additional features and advantages of the present invention will be described hereinafter which may form the subject of the claims of the present invention.
A better understanding of the present invention can be obtained when the following detailed description is considered in conjunction with the following drawings, in which:
The principles of the present invention provide a new class of electro-optical devices. The electro-optical devices of the present invention have different optical functionalities according to their design. They have a large bandwidth operation with a flexible optical response. Furthermore, the electro-optical devices of the present invention can be fabricated using traditional lithographic processes.
Referring now to the Figures in detail,
Furthermore, in one embodiment, antennas 201, 202 enable active gating of electro-optical device 100. For example, antennas 201, 202 may serve as electrodes. A DC or AC voltage (or a pulse) between drain and source antennas 201, 202 can control the optical properties (index of refraction) of electro-optical substrate 101 in gap 203 (channel) and thereby modulate the AC field.
Additionally, in one embodiment, drain and source antennas 201, 202 serve as electrodes for data acquisition. The conductivity of gap 203 (channel) can be related to the index of refraction and temperature by calibration. In one embodiment, substrate 101 consists of a band-gap material. In another embodiment, substrate 101 consists of a doped semiconductor (e.g., silicon useful for high-speed modulating of light) or a phase transition metal-oxide (e.g., vanadium dioxide (VO2) useful for sensing and low-speed modulation of light). Transition metal-oxide materials (e.g., VO2, titanium dioxide (TiO2), aluminum oxide (Al2O3)) transition between an oxide and a metal at a certain temperature (depending on the material) where resistivity changes by 3 to 4 orders of magnitude. While the former uses depletion of the channel from the charge carrier to modify the index of refraction, the latter uses the bolometric effect. The former effect can operate in the gigahertz-rate, which is an appropriate speed for telecommunications. The latter effect has a millisecond response time, which is appropriate for applications, such as biosensing and display technology.
In one embodiment, metasurface 102 has a resonance where the electromagnetic fields in gap 203 are enhanced by ˜100 times. This will enhance the interaction energy by 10,000 times in gap 203. In the case of transition metal-oxides, this will increase the temperature of substrate 101 (only in gap 203). Source and drain electrodes 202, 201 then read resistance between the drain and source for each unit cell 103 (also referred to herein as the “nanosensor”). Proximity of a biomaterial (e.g., biomolecule, biocell, DNA) will affect the electromagnetic fields of gap 203 if they possess a molecular fingerprint that matches the resonance frequency of metasurface 102. This is due to the additional loss that lowers the field enhancement. This will in turn change the local temperature in gap 203 and cause substrate 101 to enter through a phase-transition. A data acquisition system can then read the local resistance of each nanosensor 103 to identify the presence of such a biomaterial target.
Furthermore, electro-optical device 100 of the present invention exhibits low-power consumption. The low-power consumption is due to the fact that the active region of electro-optical device 100 is only gap 203 and not the whole substrate 101 which is what makes device 100 so efficient. The electromagnetically active region corresponds exactly to the control and data acquisition region. Furthermore, gap 203 is small (≈100 nm). Therefore, it requires a small amount of power for controlling and acquiring data and makes it a candidate for wearable technology.
In one embodiment, device 100 may be utilized in biosensing. Two of the major common biosensing approaches are field-effect transistor (FET) biosensors and optical biosensors based on spectroscopy. FET-based biosensors are based on measuring current-voltage (I-V) curves of a transistor. With FET-based biosensors, the concentration of a certain target molecule modifies the conductivity of the transistor channel. The conductivity is then used to predict the concentration of the target molecule in the solution. Spectroscopy can provide more information about the molecule types (e.g., orientation, thickness) according to their absorption fingerprints. Spectroscopy has been long used as a non-destructive method of biosensing whose performance is improved by plasmonics (e.g., Surface Enhanced InfraRed Absorption (SEIRA)). However, they require spectrometers, which are expensive. The device of the present invention bridges between these two technologies. For example, measuring the resistance of substrate 101 between drain and source electrodes 201, 202 of the FET 103 can replace spectroscopic measurement. Hence, device 100 provides a spectroscopy-free optical biosensing platform.
Moreover, plasmonic field-effect transistors (PFETs) 103 can attract the biomolecules close to gap 203 by dielectrophoresis (DEP). The gradient of optical fields around the tip of drain and source 201, 202 and right above gap 203 will trap the biomolecule and levitate them close to the gap region where the electromagnetic fields are large. Similarly, an AC voltage applied to drain and source 201, 202 can trap the biomolecules into the gap regions. Furthermore, in one embodiment, a voltage applied to drain and source wires 204, 205 causes biomolecules to attract to wires 204, 205.
In one embodiment, biomaterial, such as biomolecules, are detected based on detecting a change in the physical properties (e.g., electrical conductivity) of substrate 101 (
Referring now to
As discussed above, device 100 includes drain and source antennas 201, 202. In one embodiment, these antennas are sized in the nanometers and serve several functionalities, including gating. Therefore, no additional gate contact is required in fabricating device 100 thereby enabling standard lithography processes to fabricate an active device 100.
Furthermore, the bolometric effect and depletion-type tuning discussed above can be performed at any frequency. By scaling the size of nanosensor 103, the resonance wavelength can cover frequencies in the visible to far-infrared range. In the embodiment where metasurface 102 is photochromic, an array of metasurfaces 102 can be integrated to one substrate 101 and cover a large spectral range of interest for detection and sensing purposes.
Additionally, the unit cell design 103 as shown in
As a result of the design of device 100 of the present invention, electro-optical device 100 adds optical enhancement to field-effect transistors (FETs). The design of device 100 of the present invention facilitates integration of several sensors (modulators) in very small spaces. Furthermore, the flexibility of the design of device 100 allows different optical functionality (e.g., narrowband resonance, wide-band resonances, linear polarization detection and dichroic polarization detection). Additionally, device 100 may be similarly used as low-power modulators of intensity/phase and polarization.
The descriptions of the various embodiments of the present invention have been presented for purposes of illustration, but are not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein was chosen to best explain the principles of the embodiments, the practical application or technical improvement over technologies found in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.
Number | Date | Country | |
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62463382 | Feb 2017 | US |