The invention relates to an electrochemical energy source comprising at least one assembly of: a first electrode, a second electrode, and an intermediate solid-state electrolyte separating said first electrode and said second electrode. The invention also relates to an electronic device provided with such an electrochemical energy source. Moreover, the invention relates to a method of manufacturing such an electrochemical energy source.
Electrochemical energy sources based on solid-state electrolytes are known in the art. These (planar) energy sources, or ‘solid-state batteries’, are constructed as stated in the preamble. Solid-state batteries efficiently and cleanly convert chemical energy directly into electrical energy and are often used as the power sources for portable electronics. At a smaller scale such batteries can be used to supply electrical energy to e.g. microelectronic modules, more particularly to integrated circuits (ICs). An example hereof is disclosed in international patent application WO 00/25378, where a solid-state thin-film micro battery is fabricated directly onto a specific substrate. During this fabrication process the first electrode, the intermediate solid-state electrolyte, and the second electrode are subsequently deposited onto the substrate. Although the known micro battery commonly exhibits superior performance as compared to other solid-state batteries, the known micro battery has several drawbacks. A major drawback of the known micro battery of WO 00/25378 is that its manufacturing process is relatively complex and therefore relatively expensive.
It is an object of the invention to provide an improved electrochemical energy source, which can be constructed and manufactured in a relatively simple manner, while maintaining the advantage of the known electrochemical energy sources.
The object of the invention is achieved by an electrochemical energy source according to the preamble, characterized in that said first electrode is formed at least partially by a conducting substrate on which the solid-state electrolyte and the second electrode are deposited. In this way the electron-conducting substrate also functions as at least a part of the first electrode. The integration of said substrate and at least a part of said first electrode leads commonly to a simpler construction of the (micro)battery compared to those known in the art. Moreover, the way of manufacturing an energy source according to the invention is also simpler, as at least one process step can be eliminated. The relatively simple manufacturing method of the solid-state energy source according to the invention may furthermore lead to significant cost saving. Preferably, the solid-state electrolyte and the second electrode are deposited on the substrate as thin film layers with a thickness of approximately between 0.5 and 5 micrometer. Thin film layers result in higher current densities and efficiencies because the transport of ions in the energy source is easier and faster through thin-film layers than through thick-film layers. In this way the internal energy loss may be minimized. As the internal resistance of the energy source is relatively low the charging speed may be increased when a rechargeable energy source is applied.
In a preferred embodiment a contact surface of the substrate facing the electrolyte and the second electrode is patterned at least partially. In this way an increased contact surface per volume between both electrodes and the solid-state electrolyte is obtained. Commonly, this increase of the contact surface(s) between the components of the energy source according to the invention leads to an improved rate capacity of the energy source, and hence a better battery capacity (due to an optimal utilization of the volume of the layers of the energy source). In this way the power density in the energy source may be maximized and thus optimized. The nature, shape, and dimensioning of the pattern may be arbitrary.
In general, the contact surface may be patterned in various ways, e.g. by providing extensions to the contact surface which project away from the contact surface. Preferably, the contact surface is provided with a plurality of cavities of arbitrary shape and dimension, said electrolyte and said second electrode being provided to at least a part of an inner surface of said cavities. This has the advantage that the patterned contact surface may be manufactured in a relatively simple way. In an embodiment the cavities are linked, enabling multiple protruding pillars to be formed on the substrate to increase the contact surface within the electrochemical energy source. In another preferred embodiment at least a part of the cavities form slits or trenches in which the solid-state electrolyte and the second electrode are deposited. The pattern, more particularly the cavities, on the contact surface of the conducting substrate may be formed for example by way of etching.
At least one of the first electrode and the second electrode is preferably coupled to a current collector. In the case of a silicon substrate a current collector may not be needed for the first electrode. However, for e.g. a Li-ion battery with a LiCoO2 electrode as second electrode preferably an aluminum current collector (layer) is applied. Alternatively, or in addition, a current collector manufactured of, preferably doped, semiconductor material such as e.g. Si, GaAs, InP, or of a metal such as copper or nickel may be applied in general as a current collector in solid-state energy sources according to the invention.
The substrate may have a main surface on or in which the cavities are formed and which defines a plane. A perpendicular projection of the current collector onto this plane may at least partly overlap with a perpendicular projection of a cavity onto this plane, and preferably with a perpendicular projection of all cavities onto this plane. In this way the current collector is relatively close to the cavity, which increases the maximum current. In an embodiment the current collector extends into a cavity, preferably into all cavities. This leads to a further increase of the rate capacity. It is particularly advantageous for the cavities to be relatively deep, i.e. a depth of 20 micrometers or more.
In an embodiment the substrate is adapted for (temporary) storage of ions of at least one of following atoms: H, Li, Be, Mg, Na and K. So, the electrochemical energy source according to the invention may be based on various intercalation mechanisms and is therefore suitable to form different kinds of batteries, e.g. Li-ion batteries, NiMH batteries, etc.
In another embodiment the substrate is made of at least one of the following materials: C, Si, Sn, Ti, Ge and Pb. A combination of these materials may also be used to form the substrate. Preferably, n-type or p-type doped Si is used as a substrate, or a doped Si-related compound, like SiGe or SiGeC. Also other suitable materials may be applied as a substrate, provided that the material of the substrate is adapted for intercalation and storing of ions, such as e.g. of the atoms mentioned in the previous paragraph. Moreover, these materials are preferably suitable to undergo an etching process to apply a pattern (holes, trenches, pillars, etc.) on the contact surface of the substrate.
The solid-state electrolyte applied in the energy source according to the invention may be based either on ionic conducting mechanisms or non-electronic conducting mechanisms, e.g. ionic conductors for H, Li, Be and Mg. An example of a Li conductor as solid-state electrolyte is Lithium Phosphorus Oxynitride (LiPON). Other known solid-state electrolytes like e.g. Lithium Silicon Oxynitride (LiSiON), Lithium Niobate (LiNbO3), Lithium Tantalate (LiTaO3), Lithium orthotungstate (Li2WO4), and Lithium Germanium Oxynitride (LiGeON) may also be used as a Lithium conducting solid-state electrolyte. A proton-conducting electrolyte may for example be formed by TiO(OH). Detailed information on proton conducting electrolytes is disclosed in international application WO 02/42831. The first (positive) electrode for a lithium ion based energy source may be e.g. the positive electrode and may be manufactured of metal-oxide based materials, e.g. LiCoO2, LiNiO2, LiMnO2 or a combination of these, such as e.g. Li(NiCoMn)O2. Examples of a first (positive) electrode in the case of a proton based energy source are Ni(OH)2 and NiM(OH)2, wherein M is formed by one or more elements selected from the group of e.g. Cd, Co, or Bi.
In yet another embodiment the solid-state electrolyte and the second electrode are deposited on multiple sides of the substrate. In this way the substrate is used more intensively for storage of ions, thereby increasing the electric capacity of the electrochemical energy source according to the invention.
Preferably, the electrochemical energy source comprises multiple assemblies electrically coupled together. The assemblies may be coupled both in a serial and/or in a parallel way dependent on the requirements of the application of the electrochemical energy source. When a relatively high current is required, the first electrodes and the second electrodes of several assemblies are electrically coupled in parallel. When a relatively high voltage is required, the first electrode of a first assembly may be electrically coupled to the second electrode of a second assembly. The first electrode of the second assembly may be electrically coupled to a second electrode of a third assembly and so forth.
The substrate may comprise a first part, which constitutes the first electrode, and a second part free from contact with the first part. The second part may comprise an electric device integrated in the second part. Preferably, the substrate comprises a barrier layer for reducing and preferably substantially preventing diffusion of ions from the first part to the second part. When the substrate is adapted for storage of Li-ions, for example by applying a silicon wafer, such a barrier layer can be formed of Si3N4 or SiO2 to prevent the Li-ions from exiting the first electrode (wafer).
Preferably, the substrate is supported by a support structure in order to consolidate the electrochemical energy source. In specific cases the application of such a support structure may be desirable. For example if a titanium or a titanium comprising substrate is used for hydrogen storage in a battery with a structure according to the invention, a support structure may be used to strengthen the construction of the energy source. Noted is that a titanium substrate may be manufactured by way of a (temporary) dielectric layer on which the substrate is deposited. After this deposition process the dielectric layer may be removed. For further support of the titanium substrate the electrically non-conducting support structure may be used. It may be advantageous to remove the substrate partially by decreasing its thickness, thereby improving the energy density of the energy source. For example from a substrate with a thickness of about 500 micrometer the energy source may be transferred to a substrate with a thickness of about 10-200 micrometer. To perform this adaptation of the substrate the (known) ‘substrate transfer technology’ may be applied.
In a preferred embodiment the first electrode comprises an electron-conducting barrier layer adapted to at least substantially preclude diffusion of intercalating ions into said substrate, said barrier layer being applied onto said substrate. This preferred embodiment is commonly very advantageous, since intercalating ions taking part in the (re)charge cycles of the electrochemical source according to the invention often diffuse into the substrate, such that these ions do no longer participate in the (re)charge cycles, resulting in a diminished storage capacity of the electrochemical source. Commonly, a monocrystalline silicon conductive substrate is applied to carry electronic components, such as integrated circuits, chips, displays, et cetera. This crystalline silicon substrate suffers from this drawback that the intercalating ions diffuse relatively easily into said substrate, resulting in a reduced capacity of said energy source. For this reason it is considerably advantageous to apply a barrier layer onto said substrate to preclude said unfavorable diffusion into the substrate. Migration of the intercalating ions will be blocked at least substantially by said barrier layer, as a result of which migration of these ions through the substrate will no longer occur, while migration of electrons through said substrate is still possible. According to this embodiment it is no longer necessary that the substrate is adapted to (for ?) storage of the intercalating ions. Therefore, it is also possible to apply electron-conductive substrates other than silicon substrates, like substrates made of metals, conductive polymers, et cetera. Said barrier layer is at least substantially made of at least one of the following compounds: tantalum, tantalum nitride, and titanium nitride. The material of the barrier layer is however not limited to these compounds. These compounds have as common property a relatively dense structure which is impermeable to the intercalating ions, including lithium ions. In a particular, preferred embodiment the first electrode further comprises an intercalating layer deposited onto a side of said barrier layer opposite to the substrate. Said intercalating layer is thereby adapted to store (and release) the intercalating ions (temporarily). According to this embodiment the first electrode is thus formed by a laminate of said substrate, said barrier layer, and said intercalating layer. Commonly, the laminate will be formed by stacking (depositing) the barrier layer and the intercalating layer onto said substrate. However, in a particular embodiment the laminate can also be formed by means of implantation techniques, wherein for example a crystalline silicon substrate is bombarded with for example tantalum ions and nitrogen ions, after which the temperature of the implanted substrate is sufficiently raised to form the physical barrier layer buried within said original substrate. As a result of the bombardment of the silicon substrate with ions, commonly the lattice of the crystalline top layer of the original substrate will be destructed, resulting in an amorphous top layer forming said intercalating layer. In a preferred embodiment said intercalating layer is at least substantially made of silicon, preferably amorphous silicon. An amorphous silicon layer has the outstanding property to store (and release) relatively large amounts of intercalating ions per unit of volume, which results in an improved storage capacity of the electrochemical source according to the invention. Preferably, said barrier layer is deposited onto said substrate. Both said barrier layer and said intercalating layer are preferably deposited onto said substrate by way of low pressure Chemical Vapor Deposition (LPCVD).
The invention further relates to an electronic module provided with at least one such electrochemical energy source. The electronic module may be formed by an integrated circuit (IC), microchip, display, et cetera. The combination of the electronic module and the electrochemical energy source may be constructed in a monolithic or non-monolithic way. In the case of a monolithic construction of said combination preferably a barrier layer for ions is applied between the electronic module and the energy source. In an embodiment the electronic module and the electrochemical energy source form a System in Package (SiP). The package is preferably non-conducting and forms a container for the afore-mentioned combination. In this way an autonomous ready-to-use SiP may be provided in which besides the electronic module an energy source according to the invention is provided.
The invention further relates to an electronic device provided with at least one such electrochemical energy source or, preferably, one such electronic module. An example of such an electronic device is a shaver, wherein the electrochemical energy source may function for example as a backup (or primary) power source. Another example of an electric device wherein an energy source according to the invention may be incorporated is a so-called ‘smart-card’ containing a microprocessor chip. Current smart-cards require a separate bulky card reader to display the information stored on the card's chip. But with a, preferably flexible, micro battery, the smart-card may comprise for example a relatively tiny display screen on the card itself that allows users easy access to data stored on the smart-card.
The invention relates moreover to a method of manufacturing such an electrochemical energy source, comprising the steps of: A) depositing the solid-state electrolyte on the substrate, and B) subsequently depositing the second electrode on the substrate. During the application of step A) and step B) preferably one of the following deposition techniques is used: Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), and Atomic Vapor Deposition (AVD). Examples of PVD are sputtering and laser ablation, that requires commonly trench widths of the order of ≧20 micrometer. Examples of CVD are LP-CVD and Atomic Layer Deposition (ALD). AVD is preferably carried out at relatively low pressures (approximately 150 mbar or lower). These techniques are well known to persons skilled in the art and allow a pore diameter in the substrate of the order of >0.5 micrometer.
In a preferred embodiment the method is provided with step C) comprising patterning of at least one contact surface of the substrate, step C) being carried out prior to step A). As explained above, the patterning of a surface of the substrate increases the contact surface per volume unit of the different components of the energy source, thereby increasing the rate capability. In an embodiment an etching technique may be used for patterning such as wet chemical etching and dry etching. Well-known examples of these techniques are RIE and Focused Ion Beam (FIB).
In an embodiment of the method, the method comprises a step D) comprising subsequently depositing an electron-conducting barrier layer and an intercalation layer on the substrate. Step D) may be applied prior to step A).
The invention is illustrated by way of the following non-limitative examples, wherein:
Number | Date | Country | Kind |
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03103386.3 | Sep 2003 | EP | regional |
04102887.9 | Jun 2004 | EP | regional |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/IB04/51483 | 8/18/2004 | WO | 3/13/2006 |