Claims
- 1. A method for producing aluminum by the molten salt electrolysis of aluminum oxide which comprises electrolyzing aluminum oxide dissolved in a molten salt containing aluminum sodium fluoride as the main component at a temperature of about 900.degree. C. to about 1000.degree. C. by passing a direct current therefor through an anode to a cathode disposed in said molten salt, wherein at least a portion of said anode that is brought into contact with said molten salt is made of or covered with a composition which includes at least about 50% by weight of electronic conductive oxide ceramics selected from one or a combination of oxides represented by general formulae XYO.sub.2 wherein X is a monovalent metal, Y is a trivalent metal and O is an oxygen atom; D.sub.2 E.sub.2 O.sub.7 wherein D is a trivalent metal, E is a tetravalent metal and O is an oxygen atom; and GRO.sub.4 wherein G is a trivalent or tetravalent metal, R is a pentavalent or tetravalent metal and O is oxygen atom, with the proviso that when G is a trivalent metal then R is selected from pentavalent metals, and when G is a tetravalent metal then R is selected from tetravalent metals.
- 2. The method of claim 1 wherein at least that portion of the electrode base which is brought into contact with the molten salt bath is coated with the composition including at least about 50% by weight of electronic conductive oxide ceramics.
- 3. The method of claim 1, wherein at least that portion of the electrode which is brought into contact with the molten salt bath is entirely made of the composition including at least about 50% by weight of electronic conductive oxide ceramics.
- 4. The method of claim 1, wherein oxide, nitride, boride or silicide of an element selected from transition metal, platinum group metal and rare earth element is added to the electronic conductive oxide ceramics as an additive.
- 5. The method of claim 1, wherein conductivity of the electronic conductive oxide ceramics is at least 0.1 .OMEGA..sup.-1 cm.sup.-1 at 1000.degree. C.
- 6. The method of claim 1, wherein melting point of the electronic conductive oxide ceramics is at or above 1200.degree. C.
- 7. The method of claim 1, wherein the electronic conductive oxide ceramics is a delafossite structure oxide selected from the group consisting of PtCoO.sub.2, PtRhO.sub.2, PdCoO.sub.2, PdRhO.sub.2, PdNiO.sub.2, AgInO.sub.2, AgCoO.sub.2 and AgRhO.sub.2.
- 8. The method of claim 1, wherein the electronic conductive oxides ceramics is a pyrochlore structure oxide selected from the group consisting of La.sub.2 Ti.sub.2 O.sub.7, La.sub.2 Ir.sub.2 O.sub.7, La.sub.2 Sn.sub.2 O.sub.7, La.sub.2 Zr.sub.2 O.sub.7, La.sub.2 Ge.sub.2 O.sub.7, La.sub.2 Ru.sub.2 O.sub.7, La.sub.2 Os.sub.2 O.sub.7, Y.sub.2 Ti.sub.2 O.sub.7, Y.sub.2 Hf.sub.2 O.sub.7, Y.sub.2 Sn.sub.2 O.sub.7, Y.sub.2 Zr.sub.2 O.sub.7, Y.sub.2 Ge.sub.2 O.sub.7, Y.sub.2 Ru.sub.2 O.sub.7, Y.sub.2 Os.sub.2 O.sub.7, Y.sub.2 Ir.sub.2 O.sub.7, Ce.sub.2 Ti.sub.2 O.sub.7, Ce.sub.2 Sn.sub.2 O.sub.7, Ce.sub.2 Zr.sub.2 O.sub.7, Ce.sub.2 Ge.sub.2 O.sub.7, Ce.sub.2 Ru.sub.2 O.sub.7, Ce.sub.2 Os.sub.2 O.sub.7, Ce.sub.2 Hf.sub.2 O.sub.7, Ce.sub.2 Ir.sub.2 O.sub.7, In.sub.2 Ge.sub.2 O.sub.7, In.sub.2 Sn.sub.2 O.sub.7, La.sub.2 Pt.sub.2 O.sub.7, Y.sub.2 Pt.sub.2 O.sub.7, Pr.sub.2 Zr.sub.2 O.sub.7, Nd.sub.2 Zr.sub.2 O.sub.7, Nd.sub.2 Sn.sub.2 O.sub.7, Sm.sub.2 Zr.sub.2 O.sub.7 and Sn.sub.2 Sm.sub.2 O.sub.7.
- 9. The method of claim 1, wherein the electronic conductive oxides ceramics is a scheelite structure oxide selected from the group consisting of ZrGeO.sub.4, ThGeO.sub.4, ZrSnO.sub.4, LaTaO.sub.4, LaNbO.sub.4, YTaO.sub.4 and YNbO.sub.4.
- 10. A method according to claim 1, wherein said composition includes at least 75% by weight of electronic conductive oxide ceramics.
- 11. The method of claim 1, wherein said electronic conductive oxide ceramic is a delafossite structure oxide selected from the group consisting of PbCoO.sub.2 and PtCoO.sub.2.
- 12. The method of claim 1, wherein said electronic conductive oxide ceramic is a pyrochlore structure oxide selected from the group consisting of La.sub.2 Sn.sub.2 O.sub.7 and La.sub.2 Zr.sub.2 O.sub.7.
- 13. The method of claim 1, wherein said electronic conductive oxide ceramic is a Scheelite structure oxide selected from the group consisting of ZrGeO.sub.4, ZrSnO.sub.4, and Zr(Ge.sub.0.4 Sn.sub.0.6)O.sub.4.
- 14. A method for producing aluminum by the molten salt electrolysis of aluminum oxide which comprises electrolyzing aluminum oxide dissolved in a molten salt containing aluminum sodium fluoride as the main component at a temperature of about 900.degree. C. to about 1000.degree. C. by passing a direct current therefor through an anode to a cathode disposed in said molten salt, wherein at least a portion of said anode that is brought into contact with said molten salt is made of or covered with a composition which includes at least about 50% by weight of electronic conductive oxide ceramics selected from one or a combination of oxides represented by general formulae ##EQU12## where Ai and Bj are metal atoms, Q.sub.Ai and Q.sub.Bj are molar fractions of Ai and Bj constituents, respectively, O is an oxygen atom; K and l represent the numbers of metal constituents constituting Ai and Bj, respectively, and constituent ions at positions A and B meet the requirements of ##EQU13## wherein Q.sub.A and Q.sub.Bj are molar fractions of the atoms, n.sub.Ai and n.sub.Bj are valences of the atoms, .gamma..sub.Ai and .gamma..sub.Bj are ion radii of the atoms, and .gamma..sub.o is ion radius of oxygen); L.sub.a O.sub.b.Ta.sub.2 O.sub.5 wherein L is a divalent, trivalent or tetravalent metal, O is an oxygen atom, and if L is a divalent metal, then a=b=1, if L is a trivalent metal, then a=2, b=3, and if L is a tetravalent metal, then a=1, b=2; and M.sub.c O.sub.d.Nb.sub.2 O.sub.5 wherein M is a divalent, trivalent or tetravalent metal, O is an oxygen atom, and if M is a divalent metal, then c=d=1, and if M is a trivalent metal, then c=2, d-3, and if M is a tetravalent metal, then c-1, d=2.
- 15. The method of claim 14, wherein at least that portion of the electrode base which is brought into contact with the molten salt bath is coated with the composition including at least about 50% by weight of electronic conductive oxide ceramics.
- 16. The method of claim 14, wherein at least that portion of the electrode which is brought into contact with the molten salt bath is entirely made of the composition including at least about 50% by weight of electronic conductive oxide ceramics.
- 17. The method of claim 14, wherein oxide, nitride, boride or silicide of an element selected from transition metal, platinum group metal and rare earth element is added to the electronic conductive oxide ceramics as an additive.
- 18. The method of claim 14, wherein conductivity of the electronic conductive oxide ceramics is at least 0.1 .OMEGA..sup.-1 cm.sup.-1 at 1000.degree. C.
- 19. The method of claim 14 wherein melting point of the electronic conductive oxide ceramics is at or above 1200.degree. C.
- 20. The method of claim 14, wherein the electronic conductive oxide ceramics is a composite perovskite structure oxide selected from the group consisting of La(Ni.sub.2/3 Ta.sub.1/3)O.sub.3, La(Ni.sub.2/3 Nb.sub.1/3)O.sub.3, La(Pd.sub.2/3 Ta.sub.1/3)O.sub.3, La(Pd.sub.2/3 Nb.sub.1/3)O.sub.3, Y(Ni.sub.2/3 Ta.sub.1/3)O.sub.3, Y(Ni.sub.2/3 Nb.sub.1/3)O.sub.3, Y(Pd.sub.2/3 Ta.sub.1/3)O.sub.3, Y(Pd.sub.2/3 Nb.sub.1/3)O.sub.3, Bi(Ni.sub.2/3 Ta.sub.1/3)O.sub.3, Bi(Ni.sub.1/2 Zr.sub.1/2)O.sub.3, La(Ni.sub.1/2 Pt.sub.1/2)O.sub.3, La(In.sub.1/2 y.sub.1/2)O.sub.3, La(In.sub.1/2 Al.sub.1/2)O.sub.3, La(Pd.sub.1/2 Sn.sub.1/2)O.sub.3, Y(Pd.sub.1/2 Sn.sub.1/2)O.sub.3, Bi(Pd.sub.1/2 Sn.sub.1/2)O.sub.3, (Ag.sub.1/2 Bi.sub.1/2)ZrO.sub.3, (Ag.sub.1/2 Y.sub.1/2)SnO.sub.3, (Ag.sub.1/2 La.sub.1/2) (In.sub.1/2 Ta.sub.1/2 )O.sub.3, (Ag.sub.1/2 Bi.sub.1/2) (In.sub.1/2 Nb.sub.1/2)O.sub.3, La(Y.sub.1/2 Fe.sub.1/2)O.sub.3, La(Y.sub.1/2 Mn.sub.1/2)O.sub.3, La(Fe.sub.1/2 In.sub.1/2)O.sub.3 and La(Fe.sub.1/2 Mn.sub.1/2)O.sub.3.
- 21. The method of claim 14, wherein the electronic conductive oxide ceramics is a rutile structure oxide selected from the group consisting of CoO.Ta.sub.2 O.sub.5, NiO.Ta.sub.2 O.sub.5, ZnO.Ta.sub.2 O.sub.5, SnO.Ta.sub.2 O.sub.5, FeO.Ta.sub.2 O.sub.5, Fe.sub.2 O.sub.3.Ta.sub.2 O.sub.5, Cr.sub.2 O.sub.3.Ta.sub.2 O.sub.5, Al.sub.2 O.sub.3.Ta.sub.2 O.sub.5, In.sub.2 O.sub.3.Ta.sub.2 O.sub.5, SnO.sub.2.Ta.sub.2 O.sub.5, TiO.sub.2.Ta.sub.2 O.sub.5 and ZrO.sub.2.Ta.sub.2 O.sub.5.
- 22. The method of claim 14, wherein the electronic conductive oxide ceramics is a columbite structure oxide selected from the group consisting of CoO.Nb.sub.2 O.sub.5, NiO.Nb.sub.2 O.sub.5, ZnO.Nb.sub.2 O.sub.5, SnO.Nb.sub.2 O.sub.5, FeO.Nb.sub.2 O.sub.5, Fe.sub.2 O.sub.3.Nb.sub.2 O.sub.5, Cr.sub.2 O.sub.3.Nb.sub.2 O.sub.5, Al.sub.2 O.sub.3.Nb.sub.2 O.sub.5, In.sub.2 O.sub.3.Nb.sub.2 O.sub.5, SnO.sub.2.Nb.sub.2 O.sub.5, TiO.sub.2.Nb.sub.2 O.sub.5 and ZrO.sub.2.Nb.sub.2 O.sub.5.
- 23. A method according to claim 14, wherein said composition includes at least 75% by weight of electronic conductive oxide ceramics.
- 24. The method of claim 14, wherein said electronic conductive oxide ceramic is a composite perovskite structure oxide selected from the group consisting of LaY.sub.1/2 In.sub.1/2 O.sub.3 and LaNi.sub.2/3 Ta.sub.1/3 O.sub.3.
- 25. The method of claim 14, wherein said electronic conductive oxide ceramic is a rutile structure oxide selected from the group consisting of Fe.sub.2 O.sub.3.Ta.sub.2 O.sub.5, NiO.Ta.sub.2 O.sub.5, and SnO.sub.2.Ta.sub.2 O.sub.5.
- 26. The method of claim 14 wherein said electronic conductive oxide is the columbite structure oxide NiO.Nb.sub.2 O.sub.5.
Priority Claims (2)
Number |
Date |
Country |
Kind |
49-122916 |
Oct 1974 |
JPX |
|
50-55015 |
May 1975 |
JPX |
|
Parent Case Info
This is a continuation of application Ser. No. 624,004 filed Oct. 20, 1975, now abandoned.
US Referenced Citations (13)
Foreign Referenced Citations (1)
Number |
Date |
Country |
1164477 |
Sep 1969 |
GBX |
Non-Patent Literature Citations (2)
Entry |
Electronic-Ceramics (Japan), vol. 3, No. 7, pp. 37-40, Jul. 1972. |
Belyaev et al., Chem. Abs., vol. 31, col. 8384 (5). |
Continuations (1)
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Number |
Date |
Country |
Parent |
624004 |
Oct 1975 |
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